WO2013153727A1 - Dispositif électroluminescent, et lampe - Google Patents

Dispositif électroluminescent, et lampe Download PDF

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Publication number
WO2013153727A1
WO2013153727A1 PCT/JP2013/001048 JP2013001048W WO2013153727A1 WO 2013153727 A1 WO2013153727 A1 WO 2013153727A1 JP 2013001048 W JP2013001048 W JP 2013001048W WO 2013153727 A1 WO2013153727 A1 WO 2013153727A1
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WIPO (PCT)
Prior art keywords
light emitting
light
emitting device
substrate
led
Prior art date
Application number
PCT/JP2013/001048
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English (en)
Japanese (ja)
Inventor
直紀 田上
利雄 森
次弘 松田
裕美 田中
考志 大村
美奈子 赤井
洋介 藤巻
康輔 菅原
Original Assignee
パナソニック株式会社
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Application filed by パナソニック株式会社 filed Critical パナソニック株式会社
Priority to CN201390000393.5U priority Critical patent/CN204179108U/zh
Priority to JP2013526259A priority patent/JP5681963B2/ja
Publication of WO2013153727A1 publication Critical patent/WO2013153727A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • F21V19/003—Fastening of light source holders, e.g. of circuit boards or substrates holding light sources
    • F21V19/0045—Fastening of light source holders, e.g. of circuit boards or substrates holding light sources by tongue and groove connections, e.g. dovetail interlocking means fixed by sliding
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00—Planar light sources
    • F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a light emitting device using a light emitting element and a lamp including the same.
  • LEDs Light Emitting Diodes
  • Patent Document 1 discloses a conventional bulb-type LED lamp.
  • Patent Document 2 discloses a conventional straight tube LED lamp.
  • an LED module including a substrate and a plurality of LEDs mounted on the substrate is used.
  • a pattern-formed terminal and a metal wiring are provided on the substrate of the LED module used for the LED lamp. And the electric power supplied from the exterior of an LED lamp via a nozzle
  • the present invention has been made to solve such a problem, and an object of the present invention is to provide a light emitting device and a lamp capable of suppressing peeling of a wiring pattern.
  • one embodiment of a light-emitting device includes a substrate, a light-emitting element provided on the substrate, and light emitted from the light-emitting element, which is formed to cover the light-emitting element.
  • a first wavelength conversion unit that converts the wavelength of the first wiring pattern; a first wiring pattern that is formed on the substrate and receives power from outside the light emitting device and supplies the light emitting element; and the first wiring pattern and the substrate are continuously connected And a glass film formed so as to cover it.
  • the glass film has translucency, and the first wiring pattern reflects light emitted from the light emitting element.
  • the glass film includes inorganic particles and reflects light emitted from the light emitting element.
  • the glass film may have an opening exposing the first wiring pattern.
  • the light emitting device further includes a second wavelength conversion unit that is formed between the substrate and the light emitting element and converts a wavelength of light emitted from the light emitting element.
  • the substrate may be translucent.
  • the light emitting device includes a plurality of the light emitting elements, and the light emitting device further includes a second wiring pattern that connects the plurality of light emitting elements in series,
  • the two wiring patterns can be configured not to contact the glass film and the second wavelength conversion unit.
  • the first wavelength conversion unit includes a first wavelength conversion material that converts a wavelength of light emitted from the light emitting element, and a resin material that includes the first wavelength conversion material.
  • the second wavelength conversion part is formed by sintering a second wavelength conversion material that converts the wavelength of light emitted from the light emitting element, and the second wavelength conversion material It can be said that it is a sintered compact film
  • the light-emitting device a hollow globe that houses the light-emitting device, a base that receives electric power for causing the light-emitting device to emit light, and the light-emitting device are placed in the globe. And a supporting column to support.
  • the lamp further includes a lead wire electrically connected to the base and soldered to the first wiring pattern of the light emitting device. it can.
  • FIG. 1A is a plan view of the light-emitting device according to Embodiment 1 of the present invention.
  • FIG. 1B is a cross-sectional view of the light-emitting device according to Embodiment 1 of the present invention.
  • FIG. 1C is a cross-sectional view of the light-emitting device according to Embodiment 1 of the present invention.
  • FIG. 1D is a cross-sectional view of the light-emitting device according to Embodiment 1 of the present invention.
  • FIG. 2 is a diagram for explaining a method of manufacturing the light emitting device according to Embodiment 1 of the present invention.
  • FIG. 3 is a view for explaining the method for manufacturing the light emitting device according to Embodiment 1 of the present invention.
  • FIG. 4A is a plan view of the light-emitting device according to Embodiment 2 of the present invention.
  • FIG. 4B is a cross-sectional view of the light-emitting device according to Embodiment 2 of the present invention.
  • FIG. 4C is a cross-sectional view of the light-emitting device according to Embodiment 2 of the present invention.
  • FIG. 5 is a diagram for explaining a method for manufacturing the light-emitting device according to Embodiment 2 of the present invention.
  • FIG. 6 is a side view of a light bulb shaped lamp according to Embodiment 3 of the present invention.
  • FIG. 7 is an exploded perspective view of a light bulb shaped lamp according to Embodiment 3 of the present invention.
  • FIG. 8 is a cross-sectional view of a light bulb shaped lamp according to Embodiment 3 of the present invention.
  • FIG. 9 is a schematic cross-sectional view of the illumination device according to the embodiment of the present invention.
  • the X axis, the Y axis, and the Z axis shown in each figure are three axes orthogonal to each other.
  • the X-axis direction is the longitudinal direction of the substrate (the direction in which a plurality of LEDs are arranged).
  • the Y-axis direction is a direction orthogonal to the X-axis and is a short direction of the substrate.
  • the Z-axis direction is a direction orthogonal to the X-axis and the Y-axis and is a direction perpendicular to the first main surface of the substrate.
  • Each figure is a schematic diagram and is not necessarily illustrated strictly.
  • FIG. 1A is a plan view showing the configuration of the light-emitting device 1 according to the present embodiment
  • FIG. 1B is a cross-sectional view showing the configuration of the light-emitting device 1 (taken along the line AA ′ in FIG. 1A)
  • 1C is a cross-sectional view showing the configuration of the light-emitting device 1 (cross-sectional view taken along the line BB ′ in FIG. 1A)
  • FIG. 1D is a configuration of the light-emitting device 1
  • FIG. 2 is a cross-sectional view (cross-sectional view taken along the line CC ′ of FIG. 1A).
  • the light emitting device 1 is a light emitting module (LED module) that emits light of a predetermined color, and is formed to cover the substrate 10, the plurality of LEDs 20 provided on the substrate 10, and the plurality of LEDs 20.
  • a sealing member 30 that converts the wavelength of light emitted from the LED 20, a first metal wiring 51 and a terminal 53 that are formed on the substrate 10, receive power from the outside of the light emitting device 1 and supply the LED 20, and the substrate 10
  • a second metal wiring 50 electrically connected between the plurality of LEDs 20, a glass film 52 formed so as to continuously cover the terminal 53 and the first metal wiring 51 and the substrate 10, and the LED 20.
  • the wire 60 which electrically connects the 1st metal wiring 51 and the 2nd metal wiring 50 is provided. In FIG. 1A, the wire 60 is not shown.
  • the light emitting device 1 is a COB (Chip On Board) type LED module in which an LED chip (bare chip) is directly mounted on a substrate 10.
  • COB Chip On Board
  • the substrate 10 is, for example, a ceramic substrate made of aluminum nitride, alumina, or the like, a metal substrate, a resin substrate, a glass substrate, or a flexible substrate.
  • the substrate 10 is a rectangular mounting substrate (LED mounting substrate) for mounting the LEDs 20, and a first main surface (front side surface) 10a that is a surface on which the LEDs 20 are mounted, and the first main surface 10a. And an opposing second main surface (back side surface) 10b.
  • the length of the substrate 10 in the X-axis direction (long side length) is L1
  • the length in the Y-axis direction (short side length) is L2
  • Two through holes 11 are provided at both ends of the substrate 10 in the X-axis direction. These two through holes 11 are for electrically connecting a lead wire for power supply (not shown) and the terminal 53, and the lead wire is inserted into the through hole 11.
  • One through hole 12 is provided in the center of the substrate 10.
  • the through hole 12 is for fixing the light emitting device 1 to another member (support member or the like), and a protrusion of a support member such as a support is fitted into the through hole 12.
  • the LED 20 is an example of the light emitting element of the present invention, and a plurality of LEDs 20 are mounted on the first main surface 10 a of the substrate 10.
  • the plurality of LEDs 20 are arranged so that a plurality of element arrays arranged in a straight line at the same pitch in the X-axis direction are arranged in the Y-axis direction.
  • the plurality of LEDs 20 are connected in series in the element rows, and are connected in parallel in the element rows.
  • the interval (pitch) between adjacent LEDs 20 in the element row is 1.8 mm
  • the distance between the LED 20 in one element row and the LED 20 in the other element row is, for example, 1. It is arranged to be 8 mm.
  • the LED 20 is a bare chip that emits monochromatic visible light in all directions, that is, laterally, upwardly and downwardly. For example, the LED 20 emits 20% of the total amount of light laterally, 60% of the total amount of light upward, and 20% of the total amount of light downward.
  • the LED 20 is a rectangular (square) blue LED chip that emits blue light when energized, for example, having a side length of about 0.35 mm (350 ⁇ m).
  • the blue LED chip for example, a gallium nitride based semiconductor light emitting device having a central wavelength of 440 nm to 470 nm, which is made of an InGaN based material, can be used.
  • the LED 20 includes a sapphire substrate 21 and a plurality of nitride semiconductor layers 22 stacked on the sapphire substrate 21 and having different compositions.
  • a cathode electrode 23 and an anode electrode 24 are provided at both ends of the upper surface of the nitride semiconductor layer 22.
  • a wire bond portion 25 is provided on the cathode electrode 23, and a wire bond portion 26 is provided on the anode electrode 24.
  • the cathode electrode 23 of one LED 20 and the anode electrode 24 of the other LED 20 are electrically connected by a wire 60 via wire bond portions 25 and 26.
  • the LED 20 is fixed on the substrate 10 with a translucent chip bonding material 70 so that the surface on the sapphire substrate 21 side faces the first main surface 10a of the substrate 10.
  • a translucent material for the chip bonding material 70 By using a translucent material for the chip bonding material 70, loss of light emitted from the side surface of the LED 20 can be reduced, and generation of shadows by the chip bonding material 70 can be suppressed.
  • the sealing member 30 is an example of the first wavelength conversion unit of the present invention, and seals the LED 20 so as to cover it.
  • the sealing member 30 is a sealing resin composed of a first wavelength conversion material that converts the wavelength of light emitted from the LED 20 and a resin material that contains the first wavelength conversion material.
  • a first wavelength conversion material phosphor particles that are excited by light emitted from the LED 20 to emit light of a desired color (wavelength) can be used, or a certain wavelength such as a semiconductor, a metal complex, an organic dye, or a pigment. It is also possible to use a material containing a substance that emits light having a wavelength different from that of the absorbed light. Note that a light diffusing material such as silica particles may be dispersed in the sealing member 30.
  • phosphor particles when the LED 20 is a blue LED that emits blue light, phosphor particles that convert the wavelength of the blue light into yellow light are used in order to emit white light from the sealing member 30.
  • YAG (yttrium / aluminum / garnet) -based yellow phosphor particles can be used as the phosphor particles.
  • a part of the blue light emitted from the LED 20 is converted into yellow light by the yellow phosphor particles contained in the sealing member 30.
  • the blue light that has not been absorbed by the yellow phosphor particles (not wavelength-converted) and the yellow light that has been wavelength-converted by the yellow phosphor particles are diffused and mixed in the sealing member 30.
  • the white light is emitted from the sealing member 30.
  • green phosphor particles or red phosphor particles may be used as the phosphor particles.
  • the LED 20 is an LED 20 that emits ultraviolet rays
  • a transparent resin material such as a silicone resin, an organic material such as a fluorine-based resin, or an inorganic material such as low-melting glass or sol-gel glass can be used.
  • the sealing member 30 having the above-described configuration is formed linearly along the arrangement direction (X-axis direction) of the plurality of LEDs 20 constituting the element row, and collectively seals the element rows of the LED 20.
  • a plurality of sealing members 30 are formed along the arrangement direction (Y-axis direction) of the element rows, and individually seal different element rows.
  • Each sealing member 30 has a length of 24 mm, a line width of 1.6 mm, and a center maximum height of 0.7 mm, for example.
  • the first metal wiring 51 is an example of a part of the first wiring pattern of the present invention.
  • both ends of the substrate 10 in the X-axis direction are provided.
  • Two islands are formed in a predetermined shape.
  • These two first metal wirings 51 are formed on the first main surface 10a so as to sandwich the element rows of the plurality of LEDs 20.
  • the first metal wiring 51 is formed in a substantially rectangular shape with the Y-axis direction of the substrate 10 as a longitudinal direction on the first main surface 10a, and the length in the Y-axis direction is the same as the Y-axis direction of the substrate 10 It is substantially the same as the interval between two element rows located at both ends.
  • the first metal wiring 51 protrudes toward the element row (in the X-axis direction) at a portion adjacent to the element row of the LED 20 on the first main surface 10a.
  • the protruding portion of the first metal wiring 51 becomes a connection portion with the wire 60 from the LED 20 and is covered with a sealing member 30 that covers the wire 60 connected to itself.
  • the terminal 53 is an example of another part of the first wiring pattern of the present invention, and is formed in a predetermined shape on the first main surface 10a so as to surround the through hole 11 as a solder electrode to be soldered.
  • Two terminals 53 are formed corresponding to each of the two first metal wirings 51. These two terminals 53 are formed integrally with the corresponding first metal wiring 51 and are electrically connected by being in contact with the corresponding first metal wiring 51.
  • One pair of the first metal wiring 51 and the terminal 53 corresponding to each other constitutes one first wiring pattern.
  • the terminal 53 is a power feeding unit of the light emitting device 1, and receives power from the outside (such as a lead wire) to cause the LED 20 to emit light, and the received power is passed through the first metal wiring 51 and the second metal wiring 50. It supplies to each LED20.
  • the second metal wiring 50 is an example of the second wiring pattern of the present invention, and a plurality of second metal wirings 50 are formed in a predetermined shape on the first main surface 10a in order to electrically connect the plurality of LEDs 20 to each other in series.
  • the plurality of second metal wirings 50 are formed in an island shape between the LEDs 20 adjacent in the element array on the first main surface 10a.
  • the second metal wiring 50 is formed in the first main surface 10a in a rectangular shape whose longitudinal direction is the Y-axis direction of the substrate 10, for example, the length in the X-axis direction is 0.4 mm and the length in the Y-axis direction is The length is 0.5 mm and the thickness in the Z-axis direction is 0.008 mm.
  • the first metal wiring 51, the second metal wiring 50, and the terminal 53 configured as described above are simultaneously patterned with the same metal material.
  • the metal material for example, silver (Ag), tungsten (W), copper (Cu), or the like can be used.
  • the surface of the first metal wiring 51, the second metal wiring 50, and the terminal 53 may be plated with nickel (Ni) / gold (Au) or the like.
  • the first metal wiring 51, the second metal wiring 50, and the terminal 53 may be made of different metal materials or may be formed in separate steps.
  • first metal wiring 51 and the terminal 53 configured as described above reflect the light emitted from the LED 20.
  • the wire 60 is an electric wire for electrically connecting the LED 20 and the first metal wiring 51, or the LED 20 and the second metal wiring 50, and is, for example, a gold wire.
  • the first metal wiring 51 or the second metal wiring formed on the upper surface of the LED 20 adjacent to each of the wire bond portions 25 and 26 and both sides of the LED 20 by the wire 60. 50 is wire-bonded.
  • the entire wire 60 is embedded in the sealing member 30 so as not to be exposed from the sealing member 30, for example.
  • the glass film 52 is glass mainly composed of silicon oxide (SiO 2 ), and is made of crystallized glass, for example. Since the glass film 52 has translucency and has a high light transmittance in the visible light region, the glass film 52 efficiently transmits the light emitted from the LED 20 toward the first metal wiring 51 and the terminal 53.
  • the transmittance of the glass film 52 is, for example, 10% or more, preferably 80% or more, and more preferably 90% or more with respect to light in the visible light region. In other words, the glass film 52 is transparent to the light in the visible light region, that is, the other side can be seen through.
  • the transmittance of the glass film 52 can be adjusted by changing the material composition, but can also be adjusted by changing the thickness of the glass film 52.
  • the glass film 52 has a thickness of 0.01 mm in the Z-axis direction, and is formed in a predetermined shape on the first main surface 10a so as to cover each of the two sets of the first metal wiring 51 and the terminal 53 collectively. Two are formed in a shape. These two glass films 52 are formed so as not to contact the second metal wiring 50 so that the second metal wiring 50 and the wire 60 can be electrically connected, and the corresponding first metal wiring 51 and only the terminal 53 are covered.
  • the glass film 52 is formed on the first main surface 10 a so as to protrude from the peripheral portion of the terminal 53, and covers the entire peripheral portion of the terminal 53. Further, the glass film 52 is not formed in a portion surrounding the through hole 11 in the terminal 53, that is, in a connection portion where a connection member such as solder is connected to the outside of the light emitting device 1. That is, the glass film 52 has an opening that exposes the soldered portion of the terminal 53 to the surface.
  • a temperature of about 300 ° C. is also applied to the terminal 53. Therefore, the film formed on the terminal 53 is resistant to such a temperature.
  • the glass film 52 can satisfy this requirement.
  • the glass film 52 can suppress the peeling of the terminal 53 while enabling the electrical connection between the terminal 53 and the outside of the light emitting device 1.
  • the opening of the glass film 52 is a perfect circle having a radius of 1.5 mm
  • the glass film 52 covers a portion 0.2 mm from the peripheral edge of the terminal 53 and protrudes 0.2 mm from the peripheral edge of the terminal 53. Formed as follows.
  • the glass film 52 is formed on the first main surface 10 a so as to protrude from the peripheral edge portion of the first metal wiring 51, and is the first except for the protruding portion (connection portion with the wire 60) of the first metal wiring 51. All of the metal wiring 51 is covered. With such a configuration, the glass film 52 can suppress the peeling of the first metal wiring 51 while enabling the electrical connection between the LED 20 and the first metal wiring 51.
  • the length in the X-axis direction of the glass film 52 covering the portion other than the protruding portion of the first metal wiring 51 is 0.5 mm
  • the length in the X-axis direction of the glass film 52 covering the portion other than the protruding portion of the first metal wiring 51 The glass film 52 is formed so as to protrude 0.2 mm from both ends of the first metal wiring 51 in the X-axis direction.
  • a sealing member 30 for sealing the element array of the LED 20 corresponding to the protruding portion is formed on the glass film 52 near the protruding portion of the first metal wiring 51.
  • the sealing member 30 may be formed so as not to contact the glass film 52.
  • the two glass films 52 are provided on the first main surface 10a corresponding to the two sets of the first metal wirings 51 and the terminals 53, only one glass film 52 may be provided. In this case, only one of the two sets of the first metal wiring 51 and the terminal 53 may be covered with the glass film 52, or the two sets of the first metal wiring 51 and the terminal 53 are covered with the one glass film 52. May be. However, the glass film 52 needs to be an insulating film so that the two sets of the first metal wiring 51 and the terminal 53 are not short-circuited.
  • the glass film 52 covers both the first metal wiring 51 and the terminal 53, the glass film 52 may cover only the terminal 53 without covering the first metal wiring 51.
  • the light-emitting device 1 of the present embodiment is formed so as to cover the substrate 10, the LED 20 provided on the substrate 10, and the LED 20, and the sealing member 30 that converts the wavelength of light emitted from the LED 20.
  • the light emitting device 1 is formed on the substrate 10, and receives the power from the outside of the light emitting device 1 and supplies the LED 20 with the first metal wiring 51 and the terminal 53, the first metal wiring 51 and the terminal 53, and the substrate 10.
  • a glass film 52 formed so as to cover continuously. Therefore, since the first metal wiring 51 and the terminal 53 are coated with the glass film 52, peeling of the first metal wiring 51 and the terminal 53 is suppressed.
  • the first metal wiring 51 and the terminal 53 are likely to be peeled off starting from the peripheral portion and the substrate 10. This can be avoided by the glass film 52 that completely covers the periphery of the one metal wiring 51 and the terminal 53.
  • the LED lamp when the LED lamp is configured using the light emitting device 1 of the present embodiment, not all the light of each LED 20 is emitted directly toward the inner surface of the tube of the LED lamp. It goes to the metal wiring 51, the terminal 53, and the like. Similarly, part of the light emitted toward the inner surface of the tube is reflected by the inner surface of the tube without passing through the tube, and travels toward the substrate 10, the first metal wiring 51, the terminal 53, and the like.
  • the glass film 52 has translucency, and the 1st metal wiring 51 and the terminal 53 reflect the light emitted from LED20. Accordingly, the light directed toward the substrate 10, the first metal wiring 51, the terminal 53, etc. can be reflected by the first metal wiring 51 and the terminal 53 and directed toward the inner surface of the LED lamp, thereby improving the light extraction efficiency of the LED lamp. Can be made.
  • the glass film 52 has an opening through which the terminal 53 is exposed. Accordingly, the exposed portion of the terminal 53 can be electrically connected to the outside of the light emitting device 1.
  • the glass film 52 is formed so as to cover the first metal wiring 51 and the terminal 53 and is not formed on the second metal wiring 50.
  • the glass film 52 may be formed so as to continuously cover the second metal wiring 50 and the substrate 10 in a form in which an opening is provided at a connection position of the second metal wiring 50 with the wire 60.
  • the glass film 52 may be formed so as to continuously cover the second metal wiring 50 and the substrate 10 without providing an opening. Good. Thereby, peeling of the 2nd metal wiring 50 can be suppressed.
  • FIGS. 2 and 3 are diagrams for explaining a method of manufacturing the light-emitting device 1 according to the present embodiment.
  • the manufacturing method of the light-emitting device 1 of this Embodiment is explained in full detail.
  • a substrate 10 provided with through holes 11 and 12 is prepared.
  • a plurality of second metal wirings 50 having a predetermined shape are formed in an island shape on the first main surface 11a of the substrate 10, and the two through holes 11 are respectively formed.
  • Two terminals 53 are formed so as to be separately enclosed, and two first metal wirings 51 are formed so as to be in contact with each of the two terminals 53.
  • the first metal wiring 51, the second metal wiring 50, and the terminal 53 can be formed, for example, by printing a conductive paste in a predetermined pattern and baking it at a temperature range of 700 ° C. to 800 ° C. for 10 minutes.
  • the conductive paste for example, a silver paste containing Ag as a main component can be used.
  • a glass film 52 is formed on the first main surface 11 a of the substrate 10 so as to cover the first metal wiring 51 and the terminal 53. Specifically, a glass film is formed on the first main surface 11a so as to cover a portion other than the connection portion where the soldering of the terminal 53 is performed and a portion other than the protruding portion connected to the wire 60 of the first metal wiring 51. 52 is formed.
  • the LED 20 is mounted on the first main surface 11 a of the substrate 10.
  • the LED 20 is mounted by die bonding the LED 20 with a die attach agent or the like. Then, in order to electrically connect LED20 and the 1st metal wiring 51 or the 2nd metal wiring 50, LED20 and the 1st metal wiring 51 or the 2nd metal wiring 50 which adjoins this LED20 are used for wire 60. Wire bonding.
  • the sealing member 30 is formed on the first main surface 10 a of the substrate 10.
  • a sealing member 30 can be applied and formed by a dispenser method.
  • a discharge nozzle of a dispenser is disposed above the LED 20, and the discharge nozzle is moved along the element array of the LED 20 while discharging the sealing member material (phosphor-containing resin) from the discharge nozzle.
  • the sealing member 30 of a predetermined shape can be formed by curing the sealing member material by a predetermined method. Thereby, the light-emitting device 1 is manufactured.
  • the glass film 52 can be specifically formed as follows.
  • powdery frit glass (powder glass) is prepared, and a paste for forming a glass film is prepared by adding a solvent to this and kneading.
  • a glass film forming paste is printed at a predetermined position on the first main surface 11a of the substrate 10 in a predetermined shape.
  • the paste for forming the glass film can be coated by application other than printing.
  • the substrate 10 on which the glass film forming paste is printed is fired.
  • the glass frit of the paste for forming the glass film is softened, and the glass film 52 as a sintered body film can be formed on the substrate 10 or the wiring pattern.
  • the first metal wiring 51 and the terminal 53 can be prevented from peeling off. Moreover, the light extraction efficiency of the LED lamp can be improved.
  • the glass film 52 transmits light so as to extract the light of the LED 20 that does not face the inner surface of the LED lamp and the light of the LED 20 reflected by the inner surface of the tube, that is, the light that is not extracted from the LED lamp, from the LED lamp.
  • the first metal wiring 51 and the terminal 53 reflect the light of the LED 20 toward the inner surface of the tube.
  • the first metal wiring 51 and the terminal 53 are made of a material that transmits the light of the LED 20, for example, ITO. It can be made of a transparent conductive material such as (Indium Tin Oxide).
  • the light emitting device 1 of the present modification is different from the light emitting device 1 of the present embodiment in that the glass film 52 contains inorganic particles and reflects light emitted from the LED 20 toward the inner surface of the tube.
  • the difference from the light emitting device 1 of the present embodiment will be described in detail.
  • the glass film 52 is composed of, for example, inorganic particles as white additives for whitening the glass film 52 such as metal oxide fine particles, and glass containing silicon oxide (SiO 2 ) as a main component and containing inorganic particles. It is an inorganic film.
  • inorganic particles for example, fine particles composed of titanium oxide (TiO 2 ), aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ), magnesium oxide (MgO), or the like can be used.
  • the fine particles refer to particles having a particle system of several ⁇ m or less.
  • crystallized glass or the like can be used as the glass containing inorganic particles.
  • the glass film 52 can reflect the light emitted from the LED 20 and has a high reflectance with respect to visible light.
  • the reflectance of the glass film 52 is adjusted by adjusting the concentration of the inorganic particles.
  • concentration of an inorganic particle can be 80 wt%, for example.
  • the glass film 52 can be specifically formed as follows.
  • powdery inorganic particles are prepared, powdery frit glass (powder glass) is prepared as a binder for sintering, and a white glass is prepared by adding a solvent to the prepared inorganic particles and frit glass and kneading them.
  • a paste for film formation is prepared.
  • a white glass film forming paste is printed at a predetermined position on the first main surface 11a of the substrate 10 in a predetermined shape.
  • the white glass film-forming paste can be coated by application other than printing.
  • the substrate 10 on which the white glass film forming paste is printed is fired.
  • the glass frit of the white glass film forming paste is softened, and the inorganic particles are bonded to each other, and the inorganic particles are bonded (bonded) to the substrate 10 and the wiring pattern by the glass frit.
  • a white glass film 52 as a film can be formed.
  • the light emitting device 1 of this modification it is possible to suppress the separation of the first metal wiring 51 and the terminal 53 for the same reason as the light emitting device 1 of the first embodiment.
  • the glass film 52 includes inorganic particles and reflects the light emitted from the LED 20. Accordingly, the light traveling toward the first metal wiring 51 and the terminal 53 can be reflected by the glass film 52 on the first metal wiring 51 and the terminal 53 and directed toward the inner surface of the tube of the LED lamp. Efficiency can be improved.
  • the light-emitting device 1 of Embodiment 1 has a configuration in which light is extracted from only one surface (first main surface 10a) of the substrate 10.
  • the substrate 10 can be a light-transmitting substrate so that light can be extracted from the other surface (second main surface 10b) of the substrate 10.
  • desired light can be extracted from both surfaces of the substrate 10 by providing a wavelength conversion unit (second wavelength conversion unit) separate from the sealing member 30 between the LED 20 and the substrate 10.
  • a wavelength conversion unit second wavelength conversion unit
  • the peeling of the terminal 53 can also be suppressed.
  • the second wavelength conversion unit is formed on the first metal wiring 51 and the terminal 53, the light traveling toward the first metal wiring 51 and the terminal 53 passes through the second wavelength conversion unit. Light absorption occurs, causing problems such as color misregistration and a decrease in light extraction efficiency.
  • the first metal wiring 51 is suppressed while suppressing color misregistration, a decrease in light extraction efficiency, and the like. And the light-emitting device which can suppress peeling of the terminal 53 is implement
  • FIGS. 4A to 4C are plan views showing the configuration of the light-emitting device 2 according to the present embodiment
  • FIG. 4B is a cross-sectional view showing the configuration of the light-emitting device 2 (taken along the line AA ′ in FIG. 4A)
  • 4C is a cross-sectional view (cross-sectional view taken along the line BB ′ in FIG. 4A) showing the configuration of the light-emitting device 2.
  • FIG. Note that a cross-sectional view taken along the line C-C ′ of FIG. 4A is the same as FIG. 1D.
  • the substrate 10 has translucency, and is formed between the substrate 10 and each of the plurality of LEDs 20, and converts the wavelength of light emitted from the LEDs 20. Is different from the light-emitting device 1 of the first embodiment.
  • the light emitting device 1 includes a substrate 10, a plurality of LEDs 20, a sealing member 30, a phosphor layer 40, a first metal wiring 51, a second metal wiring 50, a terminal 53, a glass film 52, and a wire 60. With. In FIG. 4A, the wire 60 is not shown.
  • each component of the light-emitting device 2 will be described in detail focusing on differences from the light-emitting device 1 of the first embodiment.
  • substrate 10 is a translucent board
  • the transmittance of the substrate 10 is, for example, 10% or more, preferably 80% or more, more preferably 90% or more with respect to light in the visible light region.
  • a light transmitting ceramic substrate made of alumina or aluminum nitride, a transparent glass substrate, a quartz substrate, a sapphire substrate, a transparent resin substrate, or the like can be used.
  • a translucent ceramic substrate made of alumina having a transmittance of 90% can be used as the substrate 10.
  • the transmittance of the substrate 10 can be adjusted by changing the material composition, but can also be adjusted by changing the thickness of the substrate 10.
  • a plurality of LEDs 20 are mounted via the phosphor layer 40 on the first major surface 10a. That is, the LED 20 is mounted on the phosphor layer 40.
  • the phosphor layer 40 is an example of the second wavelength conversion unit of the present invention, and a plurality of phosphor layers 40 are formed in an island shape corresponding to each LED 20, and are formed immediately below the corresponding LED 20.
  • the plurality of phosphor layers 40 have the same shape and are formed in a rectangular shape whose longitudinal direction is the Y-axis direction of the substrate 10.
  • the length in the X-axis direction is 1.0 mm and the length in the Y-axis direction is The thickness in the Z-axis direction is 0.8 mm and the thickness is 0.045 mm.
  • the phosphor layer 40 is formed so as not to contact the first metal wiring 51 and the second metal wiring 50 formed between the adjacent LEDs 20. This is because when the phosphor layer 40 is formed on the first metal wiring 51 and the second metal wiring 50, the first metal wiring 51 and the second metal wiring 50 and the wire 60 are electrically connected. It is because it becomes impossible. In particular, since the first metal wiring 51 and the second metal wiring 50 have high wettability, the phosphor layer 40 is applied to the first metal wiring 51 and the second metal wiring 50 when the paste-like phosphor layer 40 is printed. This is because if they come into contact with each other, they spread on the first metal wiring 51 and the second metal wiring 50 and are unintentionally covered with the phosphor layer 40.
  • the phosphor layer 40 includes a second wavelength conversion material that converts the wavelength of light emitted from the LED 20 and an inorganic material (sintering binder) that is formed by sintering and contains the second wavelength conversion material. It is a sintered body film.
  • the second wavelength conversion material similarly to the sealing member 30, phosphor particles that are excited by light emitted from the LED 20 and emit light of a desired color (wavelength) can be used, or a semiconductor, a metal complex, A material containing a substance that emits light having a wavelength different from the light absorbed by absorbing light having a certain wavelength, such as an organic dye or a pigment, can also be used. Note that a light diffusing material such as silica particles may be dispersed in the sealing member 30.
  • the inorganic material is a binding material (binding material) for binding the phosphor particles to the substrate 10 and is made of a material having a high transmittance for visible light.
  • the phosphor particles as the second wavelength conversion material, when the LED 20 is a blue LED that emits blue light, in order to emit white light from the sealing member 30, the wavelength of blue light is converted into yellow light or yellow-green light.
  • Phosphor particles are used. Examples of such phosphor particles include YAG (yttrium, aluminum, garnet) -based yellow phosphor particles, yellow phosphor particles activated with Ce (cerium) excited at 430 nm to 470 nm, or yellow-green phosphor particles. Can be used. Thereby, a part of blue light emitted from the LED 20 is wavelength-converted into yellow light or yellow-green light by the yellow phosphor particles or yellow-green phosphor particles contained in the phosphor layer 40.
  • green phosphor particles or red phosphor particles may be used as the phosphor particles.
  • grains light-emitted in three primary colors (red, green, blue) is used.
  • red phosphor particles red phosphor particles activated with Eu 2+ (europium) excited at 430 nm to 470 nm can be used.
  • glass frit containing silicon oxide (SiO 2 ) as a main component, SnO 2 —B 2 O 3 made of low melting point crystal, or the like can be used. Glass frit can be formed by heating and melting glass powder. As glass powder of the glass frit, SiO 2 —B 2 O 3 —R 2 O, B 2 O 3 —R 2 O, or P 2 O 5 —R 2 O (wherein R 2 O is any , Li 2 O, Na 2 O, or K 2 O).
  • the concentration of the phosphor particles in the phosphor layer 40 is 91 wt% or less, and the thickness of the phosphor layer 40 is 0. 0.03 mm or more is preferable. This is because if the concentration of the phosphor particles exceeds 91%, the phosphor layer 40 peels from the alumina substrate.
  • peeling of the first metal wiring 51 and the terminal 53 can be suppressed for the same reason as the light emitting device 1 of the first embodiment.
  • the light-emitting device 2 includes a phosphor layer 40 that is formed between the substrate 10 and the LED 20 and converts the wavelength of light emitted from the LED 20, and the substrate 10 has translucency. Therefore, after a part of the light of the LED 20 passes through the phosphor layer 40, it propagates through the translucent substrate 10 and travels toward the first metal wiring 51 and the terminal 53. However, in the light emitting device 2, the first metal wiring 51 and the terminal 53 or the glass film 52 can reflect such light toward the tube inner surface of the LED lamp, thereby improving the light extraction efficiency of the LED lamp. be able to.
  • the light emitting device 2 includes a plurality of LEDs 20 and a second metal wiring 50 that connects the plurality of LEDs 20 in series, and the second metal wiring 50 does not contact the glass film 52 and the phosphor layer 40. . Since the surface of the second metal wiring 50 needs to be exposed for wire bonding, the second metal wiring 50 can be prevented from being unintentionally covered by the glass film 52 and the phosphor layer 40. it can.
  • the sealing member 30 is formed of a first wavelength conversion material that converts the wavelength of light emitted from the LED 20 and a resin material that contains the first wavelength conversion material.
  • the phosphor layer 40 is a sintered body film formed of a second wavelength conversion material that converts the wavelength of light emitted from the LED 20 and an inorganic material that is formed by sintering and contains the second wavelength conversion material. is there. Therefore, if the first metal wiring 51 and the terminal 53 are covered with the phosphor layer 40 in order to suppress the separation of the first metal wiring 51 and the terminal 53, a color shift and a decrease in light extraction efficiency occur. However, since the peeling of the first metal wiring 51 and the terminal 53 is suppressed by the glass film 52 having a transparent or reflecting function, such a problem does not occur.
  • FIG. 5 is a diagram for explaining a method of manufacturing the light emitting device 2 according to the present embodiment.
  • the manufacturing method of the light emitting device 2 according to the present embodiment is an embodiment in that it further includes a step of forming the phosphor layer 40 before the LED 20 is mounted on the substrate 10 after the glass film 52 is formed. 1 is different from the manufacturing method of the light emitting device 1.
  • the manufacturing method of the light-emitting device 2 according to the present embodiment will be described in detail focusing on differences from the manufacturing method of the light-emitting device 1 according to the first embodiment.
  • steps (a) to (c) in FIG. 2 are performed, and the first metal wiring 51, the second metal wiring 50, and the like are formed on the translucent substrate 10 provided with the through holes 11 and 12. Terminal 53 and glass film 52 are formed.
  • a plurality of island-shaped phosphor layers 40 are formed on the first main surface 11 a of the substrate 10 so as to be positioned between the adjacent second metal wirings 50. Form. Thereafter, after the LED 20 is provided on the phosphor layer 40, the LED 20 and the first metal wiring 51 or the second metal wiring 50 adjacent to the LED 20 are wire-bonded using the wire 60.
  • the sealing member 30 is formed on the first main surface 10 a of the substrate 10. Thereby, the light-emitting device 2 is manufactured.
  • the phosphor layer 40 can be specifically formed as follows.
  • powdered phosphor particles are prepared as the second wavelength conversion material, and powdered frit glass (powder glass) is prepared as a binder for sintering, and a solvent is added to the prepared phosphor particles and frit glass.
  • a paste for forming a sintered body film (a paste-like phosphor layer 40) is prepared by kneading.
  • powder glass having a softening point of 520 ° C. can be used as the binder for sintering.
  • the weight ratio (wt%) of the yellow phosphor particles and the powder glass can be set to a ratio of 80:20, for example.
  • the prepared material can be made into a paste by, for example, kneading (mixing) with a three-roll kneader.
  • the ratio of the phosphor particles is not limited to 80 wt%, and may be a ratio in the range of 20 to 91 wt%.
  • a paste for forming a sintered body film is printed in a predetermined shape on a predetermined position of the first main surface 10a of the substrate 10.
  • the paste for forming a sintered body film can be coated by application other than printing.
  • a predetermined surface treatment may be performed on the first main surface 10a of the substrate 10 before the substrate 10 is coated with the paste for forming the sintered body film.
  • the substrate 10 on which the paste for forming the sintered body film is printed is dried, for example, at a temperature of 150 ° C. for 30 minutes, and then baked at a temperature of about 600 ° C. for 10 minutes.
  • the glass frit is softened to form a sintered body film (phosphor layer 40) in which the phosphor particles are bonded to each other and the phosphor particles and the substrate 10 are bonded (bonded) by the glass frit. be able to.
  • the firing temperature is preferably a temperature at which the phosphor particles do not deteriorate and a temperature at which the glass frit is softened. Since the phosphor particles deteriorate when the temperature exceeds 700 ° C., the firing temperature is preferably less than 700 ° C. Thereby, the phosphor layer 40 can be coated on the first major surface 10 a of the substrate 10.
  • the first metal wiring 51 and the terminal 53 can be prevented from being peeled off. Moreover, the light extraction efficiency of the LED lamp can be improved.
  • the phosphor layer 40 is formed after the step of forming the glass film 52, but after the step of preparing the substrate 10. And if it is before the process of mounting LED20, it will not be restricted to this.
  • the formation process of the phosphor layer 40 may be performed after the process of forming the first wiring pattern and before the process of forming the glass film 52.
  • a light bulb shaped lamp 100 according to the present embodiment is an application example of the light emitting device according to the first or second embodiment.
  • FIG. 6 is a side view of the light bulb shaped lamp 100 according to the present embodiment.
  • FIG. 7 is an exploded perspective view of the light bulb shaped lamp 100 according to the present embodiment.
  • FIG. 8 is a cross-sectional view of the light bulb shaped lamp 100 according to the present embodiment.
  • the light bulb shaped lamp 100 is a light bulb shaped LED lamp that is a substitute for a light bulb shaped fluorescent light or an incandescent light bulb.
  • a lead wire 170 that receives power from the base 130 and has one end soldered to the terminal 53 of the LED module 120 and a lighting circuit 180 are provided.
  • the bulb-shaped lamp 100 includes an envelope made up of a globe 110, a resin case 160, and a base 130.
  • the LED module 120 the light-emitting device 1 or 2 of Embodiment 1 or 2 can be used.
  • each component of the light bulb shaped lamp 100 will be described in detail with reference to FIGS.
  • the globe 110 houses the LED module 120 and transmits light from the LED module 120 to the outside of the lamp.
  • the globe 110 is a glass bulb (clear bulb) made of silica glass that is transparent to visible light, for example. Therefore, the LED module 120 housed in the globe 110 can be viewed from the outside of the globe 110.
  • the shape of the globe 110 is a shape in which one end is closed in a spherical shape and an opening is provided at the other end.
  • the shape of the globe 110 is such that a part of the hollow sphere narrows while extending away from the center of the sphere, and an opening is formed at a position away from the center of the sphere.
  • a glass bulb having the same shape as a general incandescent bulb can be used.
  • a glass bulb such as an A shape, a G shape, or an E shape can be used as the globe 110.
  • the globe 110 is not necessarily transparent to visible light, and the globe 110 may have a light diffusion function.
  • a milky white light diffusing film may be formed by applying a resin containing a light diffusing material such as silica or calcium carbonate, a white pigment, or the like to the entire inner surface or outer surface of the globe 110.
  • the globe 110 does not need to be made of silica glass.
  • a globe 110 made of a resin material such as acrylic may be used.
  • the base 130 is a power receiving unit that receives power for causing the LEDs of the LED module 120 to emit light from the outside, and is attached to a socket of a lighting fixture, for example. When the light bulb shaped lamp 100 is lit, the base 130 receives power from the socket of the lighting fixture. The base 130 receives AC power through two contact points, and the power received by the base 130 is input to the power input unit of the lighting circuit 180 via a lead wire.
  • the base 130 is E-shaped, and a screwing portion for screwing into a socket of the lighting fixture is formed on the outer peripheral surface thereof. Further, on the inner peripheral surface of the base 130, a screwing portion for screwing into the resin case 160 is formed.
  • the base 130 has a metal bottomed cylindrical shape.
  • the type of the base 130 is not particularly limited.
  • a screw-type Edison type (E type) base can be used, and examples thereof include E26 type and E17 type.
  • the strut 140 is a metal stem provided so as to extend from the vicinity of the opening of the globe 110 toward the inside of the globe 110.
  • the column 140 functions as a holding member that holds the LED module 120.
  • One end of the column 140 is connected to the LED module 120, and the other end of the column 140 is connected to the support base 150.
  • the support column 140 is made of a metal material, and also functions as a heat radiating member for radiating heat generated in the LED module 120.
  • the support column 140 is made of aluminum having a thermal conductivity of 237 [W / m ⁇ K], for example.
  • the support column 140 has a protrusion for fitting with a through hole (the through hole 12 in FIGS. 1A and 1C) provided in the substrate of the LED module 120.
  • the protruding portion is provided so as to protrude from the top surface of the top of the support column 140 and functions as a position restricting portion that restricts the position of the LED module 120. That is, the protrusion is configured to determine the arrangement direction of the LED module 120.
  • pillar 140 you may use the stem which consists of a soft glass or transparent resin transparent with respect to visible light similarly to the conventional light bulb-type fluorescent lamp. Thereby, it can suppress that the light produced in the LED module 120 is lost by the support
  • the support base (support plate) 150 is a support member that supports the support column 140, and is connected to the opening end of the opening of the globe 110 as shown in FIG. 8.
  • the support base 150 is configured to close the opening of the globe 110 and is fixed to the resin case 160.
  • the support base 150 is provided with a through hole through which the lead wire 170 is passed.
  • the support base 150 is made of a metal material, and is made of aluminum in the same manner as the support column 140. Thereby, the heat of the LED module 120 thermally conducted to the support column 140 is efficiently conducted to the support base 150. As a result, it is possible to suppress a decrease in luminous efficiency and lifetime of the LED due to temperature rise.
  • the support base 150 is composed of a disk-shaped member having a stepped portion.
  • the stepped portion is in contact with the opening end of the opening of the globe 110, thereby closing the opening of the globe 110. Further, in the stepped portion, the support base 150, the resin case 160, and the opening end of the opening of the globe 110 are fixed by an adhesive.
  • the resin case 160 is an insulating case (circuit holder) that insulates the support column 140 from the base 130 and houses and holds the lighting circuit 180.
  • the resin case 160 includes a large-diameter cylindrical first case portion and a small-diameter cylindrical second case portion. Since the outer surface of the first case part is exposed to the outside air, the heat conducted to the resin case 160 is mainly dissipated from the first case part.
  • the second case portion is configured such that the outer peripheral surface is in contact with the inner peripheral surface of the base 130, and a screwing portion for screwing with the base 130 is formed on the outer peripheral surface of the second case portion. ing.
  • the resin case 160 can be formed of, for example, polybutylene terephthalate (PBT).
  • the two lead wires 170 are electric wires for supplying power for lighting the LED module 120 from the lighting circuit 180 to the LED module 120.
  • One end of each lead wire 170 is electrically connected to a terminal that is a power feeding portion of the LED module 120, and the other end of each lead wire 170 is electrically connected to a power output portion of the lighting circuit 180. .
  • the lighting circuit 180 is a circuit unit for lighting the LED module 120 (LED), and is housed in the resin case 160. Specifically, the lighting circuit 180 includes a plurality of circuit elements and a circuit board on which each circuit element is mounted. The lighting circuit 180 converts AC power fed from the base 130 into DC power, and supplies the DC power to the LED module 120 (LED chip) via the two lead wires 170.
  • the light bulb shaped lamp 100 is not necessarily provided with the lighting circuit 180.
  • the lighting circuit 180 is not limited to a smoothing circuit, and a dimmer circuit or a booster circuit can be appropriately selected and combined.
  • the light bulb shaped lamp 100 receives the light emitting device 1 or 2, the hollow globe 110 that houses the light emitting device 1 or 2, and the power for causing the light emitting device 1 or 2 to emit light.
  • a base 130 and a column 140 that supports the light emitting device 1 or 2 in the globe 110 are provided.
  • the light bulb shaped lamp 100 further includes a lead wire 170 electrically connected to the base 130 and soldered to the terminal 53 of the light emitting device 1 or 2. Therefore, since the LED module according to Embodiment 1 or 2 is used for the light bulb shaped lamp 100, a light bulb shaped lamp capable of suppressing the peeling of the wiring pattern of the LED module can be realized.
  • the light-emitting devices 1 and 2 according to the first and second embodiments described above are applied to a light bulb shaped lamp, the present invention is not limited thereto.
  • the light-emitting devices 1 and 2 according to the above-described embodiment can be applied to a straight tube lamp constituted by a long cylindrical straight tube or a round tube lamp constituted by an annular round tube.
  • the light emitting devices 1 and 2 according to the first and second embodiments can be applied to a lamp having a base structure such as a GX53 base or a GH76p base.
  • the light emitting devices 1 and 2 according to the first and second embodiments are also applied to a lighting unit having a configuration in which a lamp without a base, for example, a light emitting device (LED module) is arranged on a base such as a heat sink. be able to. Furthermore, the light-emitting devices 1 and 2 according to the first and second embodiments can be applied to other illumination systems as a light source.
  • a lighting unit having a configuration in which a lamp without a base, for example, a light emitting device (LED module) is arranged on a base such as a heat sink.
  • LED module light emitting device
  • the light-emitting devices 1 and 2 according to the first and second embodiments can be applied to other illumination systems as a light source.
  • the light emitting devices 1 and 2 according to Embodiments 1 and 2 described above are applied to a glass bulb used in an incandescent bulb. Not limited to this.
  • the light-emitting devices 1 and 2 according to the above-described first and second embodiments can also be applied to a light bulb shaped lamp including a metal case heat sink between a globe and a base.
  • the present invention can be applied to a light bulb shaped lamp having a long spherical bulb extending in the longitudinal direction used in a chandelier or a candle type lighting device.
  • the present invention can also be realized as an illumination device including a lamp such as the above-described light bulb shaped lamp.
  • the lighting device 3 may be configured to include the above-described light bulb shaped lamp 100 and a lighting fixture (lighting fixture) 4 to which the light bulb shaped lamp 100 is attached.
  • the lighting device 4 is for turning off and lighting the light bulb shaped lamp 100, and includes, for example, a device body 5 attached to the ceiling and a lamp cover 6 covering the light bulb shaped lamp 100.
  • the appliance main body 5 has a socket 5 a for attaching the cap 130 of the light bulb shaped lamp 100 and supplying power to the light bulb shaped lamp 100.
  • a translucent plate may be provided in the opening of the lamp cover 6.
  • the LED is exemplified as the light emitting element.
  • a semiconductor light emitting element such as a semiconductor laser
  • an EL element such as an organic EL (Electro Luminescence) or an inorganic EL, or other solid light emitting element is used. Also good.
  • the glass film has an opening, and the portion where the terminal is soldered is exposed on the surface.
  • an opening may not be formed in the glass film when the substrate and the terminal can be continuously covered with the glass film after the lead wire is connected to the terminal by soldering or the like.
  • all of the terminals may be covered with a glass film.
  • the present invention can be widely used as a light emitting device including a light emitting element such as an LED, and a lamp, an illumination unit, or an illumination system including the light emitting device.

Abstract

　On décrit un dispositif électroluminescent (1) qui comprend: un substrat (10); des DEL (20) ménagées sur le substrat (10); des éléments de scellement (30) conçus pour recouvrir les DEL (20) et convertir la longueur d'onde de la lumière émise par les DEL (20); un premier câblage en or (51) et des bornes (53) formés sur le substrat et recevant de l'énergie électrique depuis l'extérieur du dispositif électroluminescent (1) pour en alimenter les DEL (20); et un film de verre (52) conçu pour connecter et recouvrir le premier câblage en or (51), les bornes (53) et le substrat (10).
PCT/JP2013/001048 2012-04-11 2013-02-25 Dispositif électroluminescent, et lampe WO2013153727A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201390000393.5U CN204179108U (zh) 2012-04-11 2013-02-25 发光装置以及灯
JP2013526259A JP5681963B2 (ja) 2012-04-11 2013-02-25 発光装置及びランプ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-090435 2012-04-11
JP2012090435 2012-04-11

Publications (1)

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WO2013153727A1 true WO2013153727A1 (fr) 2013-10-17

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JP (1) JP5681963B2 (fr)
CN (1) CN204179108U (fr)
TW (1) TW201342572A (fr)
WO (1) WO2013153727A1 (fr)

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Publication number Priority date Publication date Assignee Title
KR101866624B1 (ko) 2013-05-10 2018-06-11 코닝 인코포레이티드 저융점 유리 또는 흡수성 박막을 이용한 레이저 용접 투명 유리 시트
CN109071325B (zh) * 2013-05-10 2022-04-29 康宁股份有限公司 包含透明激光焊接区域的密封装置
CN109212814A (zh) * 2017-06-30 2019-01-15 日亚化学工业株式会社 发光模块的制造方法以及发光模块

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134795A (ja) * 2000-10-27 2002-05-10 Sanken Electric Co Ltd 半導体発光装置及びその製法
JP2007088318A (ja) * 2005-09-26 2007-04-05 Taiwan Oasis Technology Co Ltd 白色発光ダイオード及びその製造工程
JP2010016223A (ja) * 2008-07-04 2010-01-21 Panasonic Corp ランプ
JP2010199105A (ja) * 2009-02-23 2010-09-09 Stanley Electric Co Ltd 発光装置およびその製造方法
JP2011238819A (ja) * 2010-05-12 2011-11-24 Toyoda Gosei Co Ltd 発光装置及びパッケージ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134795A (ja) * 2000-10-27 2002-05-10 Sanken Electric Co Ltd 半導体発光装置及びその製法
JP2007088318A (ja) * 2005-09-26 2007-04-05 Taiwan Oasis Technology Co Ltd 白色発光ダイオード及びその製造工程
JP2010016223A (ja) * 2008-07-04 2010-01-21 Panasonic Corp ランプ
JP2010199105A (ja) * 2009-02-23 2010-09-09 Stanley Electric Co Ltd 発光装置およびその製造方法
JP2011238819A (ja) * 2010-05-12 2011-11-24 Toyoda Gosei Co Ltd 発光装置及びパッケージ

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JP5681963B2 (ja) 2015-03-11
CN204179108U (zh) 2015-02-25
TW201342572A (zh) 2013-10-16

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