WO2013152241A1 - Electro-optical single crystal element, method for the preparation thereof, and systems employing the same - Google Patents

Electro-optical single crystal element, method for the preparation thereof, and systems employing the same Download PDF

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Publication number
WO2013152241A1
WO2013152241A1 PCT/US2013/035343 US2013035343W WO2013152241A1 WO 2013152241 A1 WO2013152241 A1 WO 2013152241A1 US 2013035343 W US2013035343 W US 2013035343W WO 2013152241 A1 WO2013152241 A1 WO 2013152241A1
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crystal element
electro
optical
producing
providing
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PCT/US2013/035343
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English (en)
French (fr)
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Pengdi Han
Weiling YAN
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Pengdi Han
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Priority to JP2015504738A priority Critical patent/JP6420234B2/ja
Priority to CA2869688A priority patent/CA2869688C/en
Priority to US14/390,522 priority patent/US9280006B2/en
Priority to CN201380026516.7A priority patent/CN105308496A/zh
Priority to KR1020147030887A priority patent/KR101688113B1/ko
Priority to EP13772275.7A priority patent/EP2834703A4/en
Publication of WO2013152241A1 publication Critical patent/WO2013152241A1/en
Priority to US15/006,762 priority patent/US9709832B2/en
Priority to US15/487,478 priority patent/US10082687B2/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/055—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect the active material being a ceramic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00932—Combined cutting and grinding thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G02B1/045—Light guides
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/0009—Materials therefor
    • G02F1/0018—Electro-optical materials
    • G02F1/0027—Ferro-electric materials
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0136—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  for the control of polarisation, e.g. state of polarisation [SOP] control, polarisation scrambling, TE-TM mode conversion or separation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/05—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect with ferro-electric properties
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/212—Mach-Zehnder type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/3558—Poled materials, e.g. with periodic poling; Fabrication of domain inverted structures, e.g. for quasi-phase-matching [QPM]

Definitions

  • the present invention relates to the new type Electro-Optical (E-O) crystal elements, its applications and the processes for the preparation thereof. More specifically, the present invention relates to an £-0 crystal element showing super-high effective (transverse and longitudinal) linear E-O coefficient and very low half-wave voltage V ⁇ useful in a wide number of modulation, communication, laser, and electro-optical industrial uses.
  • E-O Electro-Optical
  • PMN-PT based ferroelectric relaxor crystals have been well developed because of its super-high piezoelectric properties such as electrical strains an order higher than conventional piezoelectric materials and the electro-mechanical coupling factor over 90%. These crystals have been used for piezoelectric applications, especially for acoustic transduction devices, such as ultrasound imaging and sonar transducers.
  • the very anisotropic piezoelectric characteristics of ⁇ 011> poled PMN-PT and/or PZN-PT based crystals have been well documented.
  • the present invention relates to E-O crystal elements of ultra-high effective E-O coefficient ⁇ c and very low half-wave voltage V favor in PMN-PT and PZN-PT based ferroelectric single crystal materials.
  • the invention gives new E-O crystal elements and related E-O crystal devices with benefit merits including:
  • the invention enables the commercially application of the invented E-O crystal elements in a variety of the E-O crystal devices as a new generation of E-O crystal elements. It is especially applicable to E-O switching, E-O phase modulation, E-O amplitude modulation, laser beam modulation and optical birefringence devices.
  • the present invention also relates to the new type Electro-Optical (E-O) crystal elements, its applications and the processes for the preparation thereof. More specifically, the present invention relates to an E-O crystal element showing high effective transverse and longitudinal linear E-O coefficient and very low half- wave voltage V ⁇ useful in a wide number of modulation, communication, laser, and industrial uses.
  • E-O Electro-Optical
  • the present invention also relates to an Electro-Optical (E-O) crystal element, (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient ⁇ c , e.g-, transverse effective linear E-O coefficient ⁇ T c more than 1100 pm/V and longitudinal effective linear E-O coefficient ⁇ I c up to 527 pm/V, which results in a very low half-wavelength voltage V l ⁇ below 200V and V T ⁇ below 87V in a wide number of modulation, communication, laser, and industrial uses.
  • E-O Electro-Optical
  • the proposed crystal element is operative as a means for providing the results therein, stated differently, the proposed crystal elements are means for providing a transverse effective linear E-O coefficient ⁇ T c more than 1100 pm/V and longitudinal effective linear E-O coefficient up to 527 pm/V, which results in a very low half-wavelength voltage V l ⁇ below 200V and V T ⁇ below 87V, in products, systems, and apparatus containing the same following operative configuration.
  • the E-O single crystal materials can be selected from PMN-PT (Lead Magnesium Niobate-Lead Titanate) or PIN-PMN-PT (Lead Indium niobate-Lead magnesium Niobate-Lead Titanate) or PZN-PT (Lead Zinc Niobate-Lead Titanate) or doped crystals above.
  • the invention particularly relates to a repole-able design, i.e., applied electrical field parallel to the poling direction ⁇ 011> in the crystals.
  • the ultra-high effective E-O coefficient ⁇ c and very low V shadow in additional to the nature of re-poling capability enable the invented crystal elements to be used in a variety of the E-O devices as a new generation of E-O crystal elements. It is especially applicable to, but not limited to, E-O switching, E-O phase modulation, E-O amplitude modulation, laser beam modulation and optical birefringence devices.
  • the following example was provided as a transverse mode E-O crystal element as recited in claim 4 was tested in the configuration of transverse mode E-O amplitude modulation as recited in claim 12 (see Fig. 4A).
  • the crystal composition is 67.5%PMN-32.5%PT, ⁇ 011> poled to mm2 nano-domain symmetry.
  • the optical beam wavelength is 633 nm.
  • the results are repeatable, and: ⁇ T c : 1160 pm/V at 80 C, 527 pm/V at 20 C, 436 pm/V at -8 C, and 395 pm/V at -21 C
  • V T ⁇ 87.5 V at 80 C, 87.5 V at 20 C, 1 19 V-8 C.
  • a method of producing an electro-optical crystal element comprising the steps of: preparing a ferroelectric crystal having a chemical composition represented by one of the chemical formulas:
  • a method of producing an electro-optical crystal element wherein: the step of polarizing results in one of a single domain and a multi-nano-domain structure.
  • a method of producing an electro-optical crystal element further comprising the steps of: conducting a dicing of the prepared crystal element, and conducting a polishing and an optical finishing of the crystal element, thereby forming the electro-optical crystal element.
  • a method of producing an electro-optical crystal element wherein: providing a longitudinal mode crystal element, coating a transparent electrodes on the longitudinal mode crystal element, and the longitudinal mode crystal element providing ⁇ 011> polarization of longitudinal effective E-O coefficient ⁇ I c more than 427 pm/V and V l ⁇ less than 300 V at room temperature 20°C.
  • a method of producing an electro-optical crystal element comprising the steps of: preparing a ferroelectric crystal having a chemical composition represented by the chemical formula:
  • a method of producing an electro-optical crystal element further comprising the steps of providing a longitudinal mode crystal element, coating a transparent electrode on the longitudinal mode crystal element, and the longitudinal mode crystal element providing ⁇ 011> polarization of longitudinal effective E-O coefficient ⁇ I c above 427 pm/V and V l ⁇ less than 300 V at room temperature 20°C.
  • an electro-optical system the system being one of an amplitude modulator and a phase modulator, comprising: a longitudinal mode electro-optical crystal element produced by a method according to formula III, and the longitudinal mode electro-optical crystal element including means for providing ⁇ 01 1> polarization of longitudinal effective E-O coefficient above 427 pm/V and V l ⁇ less than 300 V at room temperature 20°C.
  • an electro- optical modulator system for laser beams comprising: a Mach-Zehnder-type interferometer modulator on an (01 1) surface of an optical electrical crystal element, and the optical electrical crystal element produced by a method according to one of formulas I, II, and III.
  • Fig. 1 is the anisotropic surface of piezoelectric coefficient d 31 of ⁇ 011> poled E- O crystal.
  • Fig. 1 A is a 3D plot of the anisotropic surface of piezoelectric coefficient d 31 for a ⁇ 011> poled E-O crystal of Fig. 1.
  • Fig. 1B is a 2D plot of the X-Y cut section of the 3D plot in Fig. 1A noting the unique anisotropic property-positive d 31 and negative d 32 , whereas both d 31 and d 32 are negative for ⁇ 001> poling and ⁇ 111> poling.
  • Fig. 2 A is a transverse mode E-O crystal element with ⁇ 011> polarization.
  • Fig. 2B is a longitudinal mode E-O crystal element with ⁇ 011> polarization.
  • Fig. 3 is an E-O crystal wafer, diced, polished, and optically finished into an E-O crystal element (cell), as noted.
  • Fig. 3A is a longitudinal mode E-O amplitude modulator system using ⁇ 011> poled E-O crystal element as noted herein.
  • Fig. 3B is a longitudinal mode E-O phase modulator system using ⁇ 011> poled E- O crystal element as noted herein.
  • Fig. 4 is an E-O crystal wafer, diced, polished, and optically finished into an E-O crystal element (cell), as noted.
  • Fig. 4 A is a transverse mode E-O amplitude modulator using ⁇ 011> poled E-O crystal element as noted herein.
  • Fig. 4B is a transverse mode E-O phase modulator using ⁇ 011> poled E-O crystal element as noted herein.
  • Fig. 5 is an E-O crystal wafer, diced, polished, and optically finished into an E-O crystal element (cell), in transverse mode.
  • Fig. 5 A is a traveling- ave E-O modulator using ⁇ 011> poled E-O crystal element of a transverse mode, for example for use in communication systems.
  • Fig. 6A is an exemplary E-O modulator for laser beams, schematic drawing along a top view of a Mach-Zehnder interferometer modulator on (Oi l) surface, with recombination with in-phase beams.
  • Fig. 6B is an exemplary E-O modulator for laser beams, schematic drawing along a top view of a Mach-Zehnder interferometer modulator on (Oi l) surface, with recombination with off-phase beams.
  • the present invention provides an Electro-Optical (E-O) crystal element, applications and the processes for the preparation thereof, including the use of the same in further systems, lasers, and modulators, as will be discussed.
  • E-O Electro-Optical
  • the present invention relates to an E-O crystal element showing high effective transverse and longitudinal linear E-O coefficient and very low half-wavelength voltage V* useful in a wide number of modulation, communication, laser, and industrial uses.
  • the ferroelectric single crystal materials can be PMN-PT (Lead Magnesium Niobate-Lead Titanate) or PIN-PM -PT (Lead Indium niobate-Lead magnesium Niobate-Lead Titanate)- or PZN-PT (Lead Zinc Niobate-Lead Titanate) and /or doped crystals above.
  • the invention particularly relates to a repole-able design ⁇ 01 l>-poled (cubic notation) ferroelectric crystals mentioned above.
  • the optical transmittance of the poled crystals is transparent from 0.41 ⁇ continues into the IR region at least through 5 ⁇ without any noticeable absorption bands.
  • the E- O crystals give super-high effective/apparent electro-optic coefficient ⁇ c / ⁇ * c and revy low half-wave voltage below 87 V .
  • This ⁇ 011> repole-able characteristic is strategically important for the practical applications in terms of reliability and convenience for uses.
  • Another merit of the repole-able configuration is the low cost for the fabrication of E-O crystal elements.
  • the ultra-high effective E-O coefficient ⁇ c and very low V ⁇ in additional to the nature of re- poling capability enable the invented crystal elements to be used in a variety of the E-O devices as a new generation of E-O crystal elements. It is especially applicable to E-O switching, E-O phase modulation, E-O amplitude modulation, laser beam modulation, tunable filter and optical birefringence devices.
  • Figs. 1-lB Applicant has noted the unique property that the ⁇ 011> poled PMN-PT and/or PZN-PT based crystals show a mm2 orthorhombic symmetry of physical properties and especially give a positive piezoelectric coefficient d 31 (+700 pC N) and a negative d 32 (-1600 pC N) all while d 3 3 still about 1000 pC N, noting the absolute difference in coefficient is very large.
  • this invention is made based on our now- recognized concepts: (1) large electrical strain changes of the ferroelectric crystals induce large changes of the respondent optical index, (2) the anisotropic of strain changes significantly impact on the optical index changes of the crystals, particularly for an optical biaxial crystals of PMN-PT based solid solutions, (3) ⁇ 011> poled crystals having stable nano-multi-domain structure leading to less light scattering by domain walls or single domain status if the crystal composition closed to the morphotropic phase boundary (MPB), and (4) a biaxial optical crystal is preferred as an incident polarized light to the crystal should be divided into two components of polarized light perpendicular each other.
  • MPB morphotropic phase boundary
  • the E-O single crystal materials can be PMN-PT (Lead Magnesium Niobate-Lead Titanate) or PIN-PMN-PT (Lead Indium niobate-Lead magnesium Niobate-Lead Titanate) or PZN-PT (Lead Zinc Niobate-Lead Titanate) and/or doped crystals of the above.
  • the cut direction, poling direction and configuration of incident light and crystallographic orientation are showing in Fig 2A.
  • the test results as follows:
  • the cut direction, poling direction and configuration of incident light and crystallographic orientation are showing in Fig 2B.
  • the test results as follows: the effective longitudinal linear E-O coefficient ⁇ e as high as 450 pm/V at 20C with very low half-wave voltage V'-j less than 300V.
  • Experimental sample 3 the effective longitudinal linear E-O coefficient ⁇ e as high as 450 pm/V at 20C with very low half-wave voltage V'-j less than 300V.
  • the cut direction, poling direction and configuration of incident light and crystallographic orientation are showing in Fig
  • the cut direction, poling direction and configuration of incident light and crystallographic orientation are showing in Fig
  • an electro optical system with transverse mode crystal may contain an electro optical crystal spacing transmission lines, for example in a communication system, having matched termination, as shown, and operatively linked with a modulation signal source, as also shown. Additionally included is a polarization feature (here a quarter wave plate), and an output polarizer.
  • a polarization feature here a quarter wave plate
  • an output polarizer an electro optical system, for example, an optical imaging system, a laser system, a communication system, or otherwise as will be understood by those of skill in the art having studied the proposed disclosure..
  • laser switching system for optical fibers (fiber communications) electrodes and beam or channel waveguides and switches may be employed with the present electro optical crystal element employed as a switch, coupling element, or other functional element in an a small crystal between either electrode, with the laser fiber linking to the small crystal, a laser system, or a communication system, or otherwise as will be understood by those of skill in the art having studied the proposed disclosure.
  • the present invention also provides the use of the disclosed E-O elements in commercial E-O crystal element applications containing a variety of the E-O crystal devices as a new generation of E-O crystal elements. It is especially applicable to E-O switching systems and methods, E-O phase modulation systems and methods, E-O amplitude modulation systems and methods, laser beam modulation and optical birefringence devices and related systems and methods, and the accompanying systems that include the same.
  • means- or step-plus-function clauses are intended to cover the structures described or suggested herein as performing the recited function and not only structural equivalents but also equivalent structures.
  • a nail, a screw, and a bolt may not be structural equivalents in that a nail relies on friction between a wooden part and a cylindrical surface, a screw's helical surface positively engages the wooden part, and a bolt's head and nut compress opposite sides of a wooden part, in the environment of fastening wooden parts, a nail, a screw, and a bolt may be readily understood by those skilled in the art as equivalent structures.

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PCT/US2013/035343 2012-04-04 2013-04-04 Electro-optical single crystal element, method for the preparation thereof, and systems employing the same WO2013152241A1 (en)

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CA2869688A CA2869688C (en) 2012-04-04 2013-04-04 Electro-optical single crystal element, method for the preparation thereof, and systems employing the same
US14/390,522 US9280006B2 (en) 2012-04-04 2013-04-04 Electro-optical single crystal element, method for the preparation thereof, and systems employing the same
CN201380026516.7A CN105308496A (zh) 2012-04-04 2013-04-04 电光单晶元件、该元件的制造方法以及使用该元件的系统
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