Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
  • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
  • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
  • G03F7/70605—Workpiece metrology
  • G03F7/70616—Monitoring the printed patterns
  • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06F—ELECTRIC DIGITAL DATA PROCESSING
  • G06F30/00—Computer-aided design [CAD]
  • G06F30/20—Design optimisation, verification or simulation
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06F—ELECTRIC DIGITAL DATA PROCESSING
  • G06F30/00—Computer-aided design [CAD]
  • G06F30/30—Circuit design
  • G06F30/39—Circuit design at the physical level
  • G06F30/394—Routing
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
  • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
  • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
  • G01N21/47—Scattering, i.e. diffuse reflection
  • G01N21/4788—Diffraction
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
  • G03F7/70605—Workpiece metrology
  • G03F7/70616—Monitoring the printed patterns
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
  • G06T2207/00—Indexing scheme for image analysis or image enhancement
  • G06T2207/30—Subject of image; Context of image processing
  • G06T2207/30108—Industrial image inspection
  • G06T2207/30148—Semiconductor; IC; Wafer
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
  • G06T7/00—Image analysis
  • G06T7/0002—Inspection of images, e.g. flaw detection
  • G06T7/0004—Industrial image inspection
  • G06T7/0006—Industrial image inspection using a design-rule based approach

Definitions

• Embodiments of the present invention are in the field of metrology, and, more particularly, relate to model optimization approaches based on spectral sensitivity.
• RCWA rigorous couple wave approach
• the profiles of periodic structures are approximated by a given number of sufficiently thin planar grating slabs.
• RCWA involves three main operations, namely, the Fourier expansion of the field inside the grating, calculation of the eigenvalues and eigenvectors of a constant coefficient matrix that characterizes the diffracted signal, and solution of a linear system deduced from the boundary matching conditions.
• RCWA divides the problem into three distinct spatial regions: (1) the ambient region supporting the incident plane wave field and a summation over all reflected diffracted orders, (2) the grating structure and underlying non-patterned layers in which the wave field is treated as a superposition of modes associated with each diffracted order, and (3) the substrate containing the transmitted wave field.
• the accuracy of the RCWA solution depends, in part, on the number of terms retained in the space-harmonic expansion of the wave fields, with conservation of energy being satisfied in general.
• the number of terms retained is a function of the number of diffraction orders considered during the calculations.
• Efficient generation of a simulated diffraction signal for a given hypothetical profile involves selection of the optimal set of diffraction orders at each wavelength for both transverse-magnetic (TM) and/or transverse-electric (TE)
• the more diffraction orders selected the more accurate the simulations.
• the higher the number of diffraction orders the more computation is required for calculating the simulated diffraction signal.
• the computation time is a nonlinear function of the number of orders used.
• the input to the RCWA calculation is a profile or model of the periodic structure.
• cross-sectional electron micrographs are available (from, for example, a scanning electron microscope or a transmission electron microscope). When available, such images can be used to guide the construction of the model.
• a wafer cannot be cross sectioned until all desired processing operations have been completed, which may take many days or weeks, depending on the number of subsequent processing operations. Even after all the desired processing operations are complete, the process to generate cross sectional images can take many hours to a few days because of the many operations involved in sample preparation and in finding the right location to image.
• the cross section process is expensive because of the time, skilled labor and sophisticated equipment needed, and it destroys the wafer.
• Embodiments of the present invention include model optimization approaches based on spectral sensitivity.
• a method of optimizing parametric models for structural analysis using metrology of repeating structures on a semiconductor substrate or wafer includes determining a first model of a structure.
• the first model is based on a first set of parameters.
• a set of spectral sensitivity variations data is determined for the structure.
• Spectral sensitivity is determined by derivatives of the spectra with respect to the first set of parameters.
• the first model of the structure is modified to provide a second model of the structure based on the set of spectral sensitivity variations data.
• the second model of the structure is based on a second set of parameters different from the first set of parameters.
• a simulated spectrum derived from the second model of the structure is then provided.
• a machine-accessible storage medium has instructions stored thereon which cause a data processing system to perform a method of optimizing parametric models for structural analysis using metrology of repeating structures on a semiconductor substrate or wafer.
• the method includes determining a first model of a structure.
• the first model is based on a first set of parameters.
• a set of spectral sensitivity variations data is determined for the structure.
• Spectral sensitivity is determined by derivatives of the spectra with respect to the first set of parameters.
• the first model of the structure is modified to provide a second model of the structure based on the set of spectral sensitivity variations data.
• the second model of the structure is based on a second set of parameters different from the first set of parameters.
• a system to generate a simulated diffraction signal to determine process parameters of a wafer application to fabricate a structure on a wafer using optical metrology includes a fabrication cluster configured to perform a wafer application to fabricate a structure on a wafer.
• One or more process parameters characterize behavior of structure shape or layer thickness when the structure undergoes processing operations in the wafer application performed using the fabrication cluster.
• an optical metrology system configured to determine the one or more process parameters of the wafer application.
• the optical metrology system includes a beam source and detector configured to measure a diffraction signal of the structure.
• the optical metrology system also includes a processor configured to determine a first model of a structure, the first model based on a first set of parameters, configured to determine a set of spectral sensitivity variations data for the structure wherein spectral sensitivity is determined by derivatives of the spectra with respect to the first set of parameters, configured to modify the first model of the structure to provide a second model of the structure based on the set of spectral sensitivity variations data, the second model of the structure based on a second set of parameters different from the first set of parameters, and configured to provide a simulated spectrum derived from the second model of the structure.
• Figure 1A is a flowchart illustrating representative operations in a method of determining a new parameterization, in accordance with an embodiment of the present invention.
• Figure IB is a flow diagram illustrating considerations in a Principal
• PCA Components Analysis
• Figure 2 is a flowchart illustrating representative operations in a method of determining a new parameterization, e.g., for determining an optimized model, in accordance with an embodiment of the present invention.
• Figure 3 is a flowchart illustrating representative operations in another method of determining a new parameterization, in accordance with an embodiment of the present invention.
• Figure 4 is a plot of correlation ranges as a function of Devices 1-7 showing
• Figure 5 is a plot of principal components as a function of degrees of freedom
• DOF principal component analysis
• Figure 6 illustrates a model having floated parameters HT1 and HT2, in accordance with an embodiment of the present invention.
• Figure 7 illustrates an angled view of a double cross-section of a semiconductor structure fabricated by a process methodology, in accordance with an embodiment of the present invention.
• Figure 8 illustrates an angled view of a double cross-section of a semiconductor structure model which may be used to model the structure of Figure 7, in accordance with an embodiment of the present invention.
• Figure 9 is a plot of model DOF along a first axis, process DOF along a second orthogonal axis, and an optimal fit axis located between the first and second axis, in
• Figure 10 depicts a flowchart representing an exemplary series of operations for determining and utilizing structural parameters for automated process and equipment control, in accordance with an embodiment of the present invention.
• Figure 11 is an exemplary block diagram of a system for determining and utilizing structural parameters for automated process and equipment control, in accordance with an embodiment of the present invention.
• Figure 12A depicts a periodic grating having a profile that varies in the x-y plane, in accordance with an embodiment of the present invention.
• Figure 12B depicts a periodic grating having a profile that varies in the x- direction but not in the y-direction, in accordance with an embodiment of the present invention.
• Figure 13 represents a cross-sectional view of a structure having both a two- dimensional component and a three-dimensional component, in accordance with an
• Figure 14 is a first architectural diagram illustrating the utilization of optical metrology to determine parameters of structures on a semiconductor wafer, in accordance with embodiments of the present invention.
• Figure 15 is a second architectural diagram illustrating the utilization of optical metrology to determine parameters of structures on a semiconductor wafer, in accordance with embodiments of the present invention.
• Figure 16 illustrates a block diagram of an exemplary computer system, in accordance with an embodiment of the present invention.
• Figure 17 is a flowchart representing operations in a method for a building parameterized model and a spectral library beginning with sample spectra, in accordance with an embodiment of the present invention.
• Figure 18 is an illustrative flowchart representing operations in a method for building a library for making production measurements of a structure, in accordance with an embodiment of this invention.
• Figure 19 is an illustrative flowchart representing operations in a method for building a real-time regression measurement recipe for making production measurements of a structure, in accordance with an embodiment of this invention.
• One or more embodiments described herein are directed to model optimization methods based on spectral sensitivity. Uses for such methods may include, e.g., applications for metrology, such as optical metrology.
• One ore more embodiments of the present invention provide new approaches to determining an optimized parametric model for structure analysis using optical metrology of repeating structures on a semiconductor substrate or wafer. For example, the model parameters correlation can be significantly reduced. As a result, the model is more stable and the number of the floating parameters may be systematically reduced without significantly compromising the model fit.
• parametric models are defined with their geometric and material parameters. Parameter sensitivities are evaluated through simulation. Fixed error analysis is performed to determine a suitable set of parameters to be floated. In many cases, such parameters are highly correlated, which can render the model as unstable and can introduce effects such as toggling. Fixing one or more of the correlated parameters can render the model more stable, but such fixing may introduce significant errors in the final results.
• Figure 1A is a flowchart 100 illustrating representative operations in a method of determining a new parameterization, in accordance with an embodiment of the present invention.
• a sensitivity analysis of spectra is performed with respect to the model parameters.
• the spectral information is used to determine a new parameterization that minimizes the parameter correlation by transformation.
• these operations involve working with signals measured as a function of wavelength, polarization, angle, and state of coherence, etc.
• Principal Components Analysis PCA
• the new model parameter nominal values and ranges are defined and the old parameters are constrained as function of the new parameters.
• the method of flowchart 100 may include use PCA parameterization.
• the use of PCA for sensitivity analysis may be different for each point of the parameter space.
• a first exemplary case involves performing PCA on the nominal, and ignoring the errors/correlations for different points in parameter space.
• a second exemplary case involves performing PCA using data from all multiple points in parameter space (e.g., using standard or detailed analysis from AcuShape). The values are averaged and then sensitivities are collected from all points and PCA is applied on the entire dataset.
• a third exemplary case involves performing PCA as calculated in real time during regression and library searching. In such an approach, the local space is sampled during each step of the regression. A global model of the parameterization is then generated as a function of geometric parameters.
• a parameterization model is obtained by calculating a PCA parameterization for each sample point in a parameter space.
• a model is generated for each coefficient in the parameterization equations, where each coefficient is as a function of the geometric parameters.
• the parameterization is constructed using the parameterization model.
• a neural network model implementation e.g., (GP1, GP2, GP3, ... ) -> (cml), or (GP1, GP2, GP3, ... ) -> (cml, cm2, cm3, Certainly) is used.
• Figure IB is a flow diagram 150 illustrating considerations in a PCA
• PCA 152 involves use of uncorrelated principal component (PC) parameters 154.
• the use of uncorrelated PC parameters 154 can result in better and faster library training 156 and/or stable models with no toggling in the library 158.
• PCA 152 can also involve concentrating most of the spectral variation in the first few parameters 160. This can result in reduced DOF 162 (e.g., providing smaller libraries 164 and/or faster regression and library generation 166). Also, use effectively more GP for the same DOF 168 can result, e.g., to provide a better fit, low chi2 170.
• the optimal DOF may be estimated 172, different subsystems can be evaluated 174, the use of multiple subsystems and targets can be evaluated 176, and/or auto wavelength selection can be performed 178.
• the PCA approach can also involve or enable new applications 180, such as shape discovery 182 and/or process variation parameterization approaches 184.
• PCA Physical Cost+Delta
• Function+Delta type of parameterization may be applied to linear and non-liner parameter correlation.
• Modeled parameter space reduction (e.g., library size reduction) may be achieved for liner and non-linear parameter spaces in this way.
• one or more of the approaches described herein may be used to improve corresponding sensitivity and correlation analysis results.
• FIG. 2 is a flowchart 200 illustrating representative operations in a method of determining a new parameterization, e.g., for determining an optimized model, in accordance with an embodiment of the present invention.
• spectra and corresponding sensitivity are calculated using a given model.
• analysis such as PCA is performed to determine a suitable transformation.
• the model is reparameterized with the transformed parameters and, at operation 208, the nominal values and ranges of the new parameters are determined.
• a decision is made as to which set of parameters to float and which to fix.
• regression on the new model is performed.
• operation 214 if a good fit is achieved, then an optimized model is obtained at 216. Otherwise, operations 210 and 212 are reiterated until a good fit is found.
• Advantages of the approaches described above can include, but are not limited to, elimination or significant reduction of the parameter correlation, as described in greater detail below in association with Figure 4.
• benefits of reducing parameter correlation in a model such as (1) redundant parameters are eliminated, thereby reducing the dimensionality of the problem, and permitting smaller library sizes, and faster library and regression calculations, and (2) numerical instabilities are reduced, which can help mitigate against the model fitting algorithm finding several competing shape solutions with approximately the same fit quality (e.g., mitigate the likelihood of including the correct shape as well as incorrect shapes).
• Another advantage is that the new parameters are ordered naturally by decreasing sensitivity, allowing straight forward application of the existing best known methods (BKM).
• Another advantage includes that ability to provide an improved method for estimating the minimal number of degrees of freedom (DOF), as is described in greater detail below in association with Figure 5.
• Additional advantages can include the ability to provide a more efficient method of improving the model fit for the same number of model parameters. Also; a more robust way of optimizing model may be provided, e.g., as described in greater detail below, Figure 6 shows a model in which the floated parameters HT1 and HT2 are highly correlated and have high sensitivity.
• Other advantages can include the ability to effectively float more parameters of the original model to create opportunities for better model fit. For example, a 5 DOF PCA parameters model constructed from 10 DOF geometric parameter model may have better fit than a 5 DOF geometric parameters model. This can improve the model stability.
• Another advantage can include reducing library size and regression toggling effects. Essentially, the library to regression matching is improved.
• Other advantages to the above described approaches can include the ability to reduce the library size (e.g., by reducing the DOF), improving the library construction (e.g., due to the use of uncorrected parameters).
• a library is defined as a reduced model of the original function or mathematical model such that the evaluation for the function/mathematical model with a library is fast but the resulting values are closely approximate the original values.
• FIG. 3 is a flowchart 300 illustrating representative operations in another method of determining a new parameterization, in accordance with an embodiment of the present invention.
• a highly discredited model is constructed.
• spectra and ray sensitivities are calculated and, then, PCA is performed at operation 306.
• the new PCA parameterization is performed at operations 308 and 310.
• the degrees of freedom (DoF) is then reduced at operation 312.
• FIG. 314 is a plot 400 of correlation ranges as a function of Devices 1-7 showing
• PCAmin and PCAmax ranges and associated min/max ranges, in accordance with an embodiment of the present invention. Referring to plot 400, elimination or significant reduction of the parameter correlation can be achieved using spectral sensitivity analysis during PCA calculations.
• Figure 5 is a plot 500 of principal components as a function of degrees of freedom (DOF) for a principal component analysis (PCA), with both singular values and cumulative proportions shown, in accordance with an embodiment of the present invention.
• DOE degrees of freedom
• FIG. 6 illustrates a model 600 having floated parameters HT1 and HT2, in accordance with an embodiment of the present invention.
• the floated parameters HT1 and HT2 are highly correlated and have high sensitivity.
• the model will initially fail due to numerical instability.
• the new model allows both heights to vary in a controlled way through the new parameter PI.
• a more robust way of optimizing model is provided.
• determining the new spectral sensitivity based parameterization and old/new model parameters relations can be performed in one or more of the following ways: (1) performing PCA, Independent Component Analysis (ICA), or Detrended Correspondence Analysis (DCA), (2) performing non-linear methods such as Auto- Associative Neural Networks (AANN), PCA-ANN, or kernel PCA, (3) searching in the parameterization space using genetic algorithms and genetic programming to find the constraint equations, (4) performing the methods above and adding/modifying custom user defined equation, (5) performing the methods above by using the combined spectra sensitivity data obtained from multiple points in parameter space, (6) performing the methods above by using the combined spectra sensitivity data obtained from multiple rays (e.g., Azimuth (Az), Angle of Incidence (AOI), and Polarization State), (7) adaptively changing the
• one or more of the above described approaches can be implemented for selecting the most capable metrology subsystem or a combination of subsystems.
• SE spectroscopic ellipsometry
• SAXS angle-resolved reflectometry
• electron beam approaches can be used.
• the approach involves running PCA on different subsystems and evaluating the number or PCA parameters that can be reliably measured by different metrology subsystems or combinations of subsystems.
• one or more of the above described approaches can be performed using a geometric model (e.g., using critical dimension (CD) or film thickness values), material parameters (e.g., using n&k, composition, or density values), system parameters (e.g., using AOI, Azimuth angle, wavelength, diffracted angle, polarizer angle values), or combinations thereof.
• Approaches described herein can also be used to optimize metrology with multiple targets (and/or with multiple tools), such as those disclosed in U.S. patent 7,478,019, "Multiple tool and structure analysis," to KLA-Tencor, which is incorporated by reference herein.
• the approaches described herein can be used on multiple sets of data using feed-forward, and feed sideways, and simultaneous analysis.
• one or more of the above approaches is applied on a subset of the parameters in play.
• one or more embodiments of the present invention may be directed toward improving a model, such as an optical model.
• parameters of a three-dimensional structure may be selected for modeling purposes.
• Figure 7 illustrates an angled view of a double cross-section of a semiconductor structure 700 fabricated by a process methodology, in accordance with an embodiment of the present invention.
• semiconductor structure has an etch feature 702 and internal topography 704 within the etch feature 702.
• Figure 8 illustrates an angled view of a double cross-section of a semiconductor structure model 800 which may be used to model the structure of Figure 7, in accordance with an embodiment of the present invention.
• the model 800 focuses on a subset of parameters.
• structure height (HT) 802, structure width (804), top critical dimension (TCD) 806 and bottom critical dimension (BCD) 808 are shown as possible parameters that may be analyzed in a modeling process.
• TCD top critical dimension
• BCD bottom critical dimension
• Process DOF is the number of independent variations. The user decides how many parameters to float.
• Model DOF is the number of geometric parameters that user selected to float.
• Figure 9 is a plot 900 of model DOF along a first axis 902, process DOF along a second orthogonal axis 904, and an optimal fit axis 906 located between the first and second axis, in accordance with an embodiment of the present invention.
• a poor modeling fit is achieved in the space overly proximate to the process DOF axis 904.
• certain features may not be modeled or are underdefined.
• toggling may result.
• there may be multiple minima or feature parameters may be overdefined in this space.
• the optimal fit 906 is not overly proximate to either of axes 902 or 904.
• approaches described above can involve providing a simulated spectrum derived from an optimized model of a structure.
• the approaches can further include comparing the simulated spectrum to a sample spectrum derived from the structure. Embodiments describing approaches of performing such operations are described in greater detail below.
• orders of a diffraction signal may be simulated as being derived from a periodic structure.
• the zeroth order represents a diffracted signal at an angle equal to the angle of incidence of a hypothetical incident beam, with respect to the normal N of the periodic structure.
• Higher diffraction orders are designated as +1, +2, +3, -1, -2, -3, etc.
• Other orders known as evanescent orders may also be considered.
• a simulated diffraction signal is generated for use in optical metrology.
• profile parameters such as structural shape and film thicknesses, may be modeled for use in optical metrology.
• Optical properties of materials, such as index of refraction and coefficient of extinction, (n & k), in structures may also be modeled for use in optical metrology.
• Calculations based simulated diffraction orders may be indicative of profile parameters for a patterned film, such as a patterned semiconductor film or structure based on a stack of films, and may be used for calibrating automated processes or equipment control.
• Figure 10 depicts a flowchart 1000 representing an exemplary series of operations for determining and utilizing structural parameters for automated process and equipment control, in accordance with an embodiment of the present invention.
• a library or trained machine learning systems is developed to extract parameters from a set of measured diffraction signals.
• at least one parameter of a structure is determined using the library or the trained MLS.
• the at least one parameter is transmitted to a fabrication cluster configured to perform a processing operation, where the processing operation may be executed in the semiconductor manufacturing process flow either before or after measurement operation 1004 is made.
• the at least one transmitted parameter is used to modify a process variable or equipment setting for the processing operation performed by the fabrication cluster.
• FIG 11 is an exemplary block diagram of a system 1100 for determining and utilizing structural parameters, such as profile or film thickness parameters, for automated process and equipment control, in accordance with an embodiment of the present invention.
• System 1100 includes a first fabrication cluster 1102 and optical metrology system 1104.
• System 1100 also includes a second fabrication cluster 1106. Although the second fabrication cluster 1106 is depicted in Figure 11 as being subsequent to first fabrication cluster 1102, it should be recognized that second fabrication cluster 1106 can be located prior to first fabrication cluster 1102 in system 1100 (and, e.g., in the manufacturing process flow).
• optical metrology system 1104 includes an optical metrology tool 1108 and processor 1110.
• Optical metrology tool 1108 is configured to measure a diffraction signal obtained from the structure. If the measured diffraction signal and the simulated diffraction signal match, one or more values of the profile or film thickness parameters are determined to be the one or more values of the profile or film thickness parameters associated with the simulated diffraction signal.
• optical metrology system 1104 can also include a library 1112 with a plurality of simulated diffraction signals and a plurality of values of, e.g., one or more profile or film thickness parameters associated with the plurality of simulated diffraction signals.
• the library can be generated in advance.
• Metrology processor 1110 can be used to compare a measured diffraction signal obtained from a structure to the plurality of simulated diffraction signals in the library.
• the one or more values of the profile or film thickness parameters associated with the matching simulated diffraction signal in the library is assumed to be the one or more values of the profile or film thickness parameters used in the wafer application to fabricate the structure.
• System 1100 also includes a metrology processor 1116.
• processor 1110 can transmit the one or more values of the, e.g., one or more profile or film thickness parameters to metrology processor 1116.
• Metrology processor 1116 can then adjust one or more process parameters or equipment settings of first fabrication cluster 1102 based on the one or more values of the one or more profile or film thickness parameters determined using optical metrology system 1104.
• Metrology processor 1116 can also adjust one or more process parameters or equipment settings of the second fabrication cluster 1106 based on the one or more values of the one or more profile or film thickness parameters determined using optical metrology system 1104.
• fabrication cluster 1106 can process the wafer before or after fabrication cluster 1102.
• processor 1110 is configured to train machine learning system 1114 using the set of measured diffraction signals as inputs to machine learning system 1114 and profile or film thickness parameters as the expected outputs of machine learning system 1114.
• optimizing a model of a structure includes using a three- dimensional grating structure.
• three-dimensional grating structure is used herein to refer to a structure having an x-y profile that varies in two horizontal dimensions in addition to a depth in the z-direction.
• Figure 12A depicts a periodic grating 1200 having a profile that varies in the x-y plane, in accordance with an embodiment of the present invention. The profile of the periodic grating varies in the z-direction as a function of the x-y profile.
• optimizing a model of a structure includes using a two- dimensional grating structure.
• the term "two-dimensional grating structure" is used herein to refer to a structure having an x-y profile that varies in only one horizontal dimension in addition to a depth in the z-direction.
• Figure 12B depicts a periodic grating 1202 having a profile that varies in the x-direction but not in the y-direction, in accordance with an embodiment of the present invention.
• the profile of the periodic grating varies in the z- direction as a function of the x profile.
• any breaks in the pattern are considered long range, e.g., any breaks in the pattern in the y-direction are spaced substantially further apart than the breaks in the pattern in the x-direction.
• Embodiments of the present invention may be suitable for a variety of film stacks.
• a method for optimizing a parameter of a critical dimension (CD) profile or structure is performed for a film stack including an insulating film, a semiconductor film and a metal film formed on a substrate.
• the film stack includes a single layer or multiple layers.
• an analyzed or measured grating structure includes both a three-dimensional component and a two- dimensional component. For example, the efficiency of a computation based on simulated diffraction data may be optimized by taking advantage of the simpler contribution by the two- dimensional component to the overall structure and the diffraction data thereof.
• Figure 13 represents a cross-sectional view of a structure having both a two- dimensional component and a three-dimensional component, in accordance with an
• a structure 1300 has a two- dimensional component 1302 and a three-dimensional component 1304 above a substrate 1306.
• the grating of the two-dimensional component runs along direction 2, while the grating of the three-dimensional component runs along both directions 1 and 2.
• direction 1 is orthogonal to direction 2, as depicted in Figure 13.
• direction 1 is non-orthogonal to direction 2.
• OCD optical critical dimension
• “COMSOL Multiphysics” may be used to identify regions of an OCD model for alteration.
• the simulation results from such a software application may be used to predict a region for successful model improvement.
• the method of optimizing a model of a structure further includes altering parameters of a process tool based on an optimized parameter.
• a concerted altering of the process tool may be performed by using a technique such as, but not limited to, a feedback technique, a feed-forward technique, and an in situ control technique.
• a method of optimizing a model of a structure further includes comparing a simulated spectrum to a sample spectrum.
• a set of diffraction orders is simulated to represent diffraction signals from a two- or three-dimensional grating structure generated by an ellipsometric optical metrology system, such as the optical metrology systems 1400 or 1550 described below in association with Figures 14 and 15, respectively.
• an ellipsometric optical metrology system such as the optical metrology systems 1400 or 1550 described below in association with Figures 14 and 15, respectively.
• the diffraction signals represented may account for features of the two- and three-dimensional grating structure such as, but not limited to, profile, dimension, material composition, or film thickness.
• FIG 14 is an architectural diagram illustrating the utilization of optical metrology to determine parameters of structures on a semiconductor wafer, in accordance with embodiments of the present invention.
• the optical metrology system 1400 includes a metrology beam source 1402 projecting a metrology beam 1404 at the target structure 1406 of a wafer 1408.
• the metrology beam 1404 is projected at an incidence angle ⁇ towards the target structure 1406 ( ⁇ is the angle between the incident beam 1404 and a normal to the target structure 1406).
• the ellipsometer may, in one embodiment, use an incidence angle of approximately 60° to 70°, or may use a lower angle (possibly close to 0° or near-normal incidence) or an angle greater than 70° (grazing incidence).
• the diffraction beam 1410 is measured by a metrology beam receiver 1412.
• the diffraction beam data 1414 is transmitted to a profile application server 1416.
• the profile application server 1416 may compare the measured diffraction beam data 1414 against a library 1418 of simulated diffraction beam data representing varying combinations of critical dimensions of the target structure and resolution.
• the library 1418 instance best matching the measured diffraction beam data 1414 is selected. It is to be understood that although a library of diffraction spectra or signals and associated hypothetical profiles or other parameters is frequently used to illustrate concepts and principles, embodiments of the present invention may apply equally to a data space including simulated diffraction signals and associated sets of profile parameters, such as in regression, neural network, and similar methods used for profile extraction.
• the hypothetical profile and associated critical dimensions of the selected library 1416 instance is assumed to correspond to the actual cross-sectional profile and critical dimensions of the features of the target structure 1206.
• the optical metrology system 1400 may utilize a reflectometer, an ellipsometer, or other optical metrology device to measure the diffraction beam or signal.
• optical metrology systems such as reflectometric systems.
• the optical metrology systems such as reflectometric systems.
• scatterometry is a technique such as, but not limited to, optical spectroscopic ellipsometry (SE), beam-profile reflectometry (BPR), beam-profile ellipsometry (BPE), and ultra-violet reflectometry (UVR).
• SE optical spectroscopic ellipsometry
• BPR beam-profile reflectometry
• BPE beam-profile ellipsometry
• UVR ultra-violet reflectometry
• a semiconductor wafer may be utilized to illustrate an application of the concept. Again, the methods and processes apply equally to other work pieces that have repeating structures.
• FIG. 15 is an architectural diagram illustrating the utilization of beam-profile reflectometry and/or beam-profile ellipsometry to determine parameters of structures on a semiconductor wafer, in accordance with embodiments of the present invention.
• the optical metrology system 1550 includes a metrology beam source 1552 generating a polarized metrology beam 1554. Preferably this metrology beam has a narrow bandwidth of 10 nanometers or less.
• the source 1552 is capable of outputting beams of different wavelengths by switching filters or by switching between different lasers or super- bright light emitting diodes.
• Part of this beam is reflected from the beam splitter 1555 and focused onto the target structure 1506 of a wafer 1508 by objective lens 1558, which has a high numerical aperture (NA), preferably an NA of approximately 0.9 or 0.95.
• NA numerical aperture
• the portion of the beam 1554 that is not reflected from the beam splitter is directed to beam intensity monitor 1557.
• the metrology beam may, optionally, pass through a quarter- wave plate 1556 before the objective lens 1558.
• the reflected beam 1560 passes back through the objective lens and is directed to one or more detectors. If optional quarter- wave plate 1556 is present, the beam will pass back through that quarter- wave plate before being transmitted through the beam splitter 1555. After the beam-splitter, the reflected beam 1560 may optionally pass through a quarter-wave plate at location 1559 as an alternative to location 1556. If the quarter- wave plate is present at location 1556, it will modify both the incident and reflected beams. If it is present at location 1559, it will modify only the reflected beam. In some embodiments, no wave plate may be present at either location, or the wave plate may be switched in and out depending on the measurement to be made. It is to be understood that in some embodiments it might be desirable that the wave plate have a retardance substantially different from a quarter wave, i.e. the retardance value might be substantially greater than, or substantially less than, 90°.
• a polarizer or polarizing beam splitter 1562 directs one polarization state of the reflected beam 1560 to detector 1564, and, optionally, directs a different polarization state to an optional second detector 1566.
• the detectors 1564 and 1566 might be one-dimensional (line) or two-dimensional (array) detectors. Each element of a detector corresponds to a different combination of AOI and azimuthal angles for the corresponding ray reflected from the target.
• the diffraction beam data 1514 from the detector(s) is transmitted to the profile application server 1516 along with beam intensity data 1570.
• the profile application server 1516 may compare the measured diffraction beam data 1514 after normalization or correction by the beam intensity data 1570 against a library 1518 of simulated diffraction beam data representing varying combinations of critical dimensions of the target structure and resolution.
• Embodiments of the present invention may be provided as a computer program product, or software, that may include a machine-readable medium having stored thereon instructions, which may be used to program a computer system (or other electronic devices) to perform a process according to the present invention.
• a machine-readable medium includes any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer).
• a machine-readable (e.g., computer-readable) medium includes a machine (e.g., a computer) readable storage medium (e.g., read only memory (“ROM”), random access memory (“RAM”), magnetic disk storage media, optical storage media, flash memory devices, etc.), a machine (e.g., computer) readable transmission medium (electrical, optical, acoustical or other form of propagated signals (e.g., infrared signals, digital signals, etc.)), etc.
• ROM read only memory
• RAM random access memory
• magnetic disk storage media e.g., magnetic disks, optical storage media, flash memory devices, etc.
• a machine (e.g., computer) readable transmission medium electrical, optical, acoustical or other form of propagated signals (e.g., infrared signals, digital signals, etc.)
• Figure 16 illustrates a diagrammatic representation of a machine in the exemplary form of a computer system 1600 within which a set of instructions, for causing the machine to perform any one or more of the methodologies discussed herein, may be executed.
• the machine may be connected (e.g., networked) to other machines in a Local Area Network (LAN), an intranet, an extranet, or the Internet.
• LAN Local Area Network
• the machine may operate in the capacity of a server or a client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment.
• the machine may be a personal computer (PC), a tablet PC, a set-top box (STB), a Personal Digital Assistant (PDA), a cellular telephone, a web appliance, a server, a network router, switch or bridge, or any machine capable of executing a set of instructions (sequential or otherwise) that specify actions to be taken by that machine.
• PC personal computer
• PDA Personal Digital Assistant
• STB set-top box
• WPA Personal Digital Assistant
• a cellular telephone a web appliance
• server e.g., a server
• network router e.g., switch or bridge
• the exemplary computer system 1600 includes a processor 1602, a main memory 1604 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM) such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM), etc.), a static memory 1606 (e.g., flash memory, static random access memory (SRAM), etc.), and a secondary memory 1618 (e.g., a data storage device), which communicate with each other via a bus 1630.
• main memory 1604 e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM) such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM), etc.
• DRAM dynamic random access memory
• SDRAM synchronous DRAM
• RDRAM Rambus DRAM
• static memory 1606 e.g., flash memory, static random access memory (SRAM), etc.
• secondary memory 1618 e.g., a data storage device
• Processor 1602 represents one or more general-purpose processing devices such as a microprocessor, central processing unit, or the like. More particularly, the processor 1602 may be a complex instruction set computing (CISC) microprocessor, reduced instruction set computing (RISC) microprocessor, very long instruction word (VLIW) microprocessor, processor implementing other instruction sets, or processors implementing a combination of instruction sets. Processor 1602 may also be one or more special-purpose processing devices such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal processor (DSP), network processor, or the like. Processor 1602 is configured to execute the processing logic 1626 for performing the operations discussed herein.
• CISC complex instruction set computing
• RISC reduced instruction set computing
• VLIW very long instruction word
• Processor 1602 may also be one or more special-purpose processing devices such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal processor (DSP), network processor, or the like.
• the computer system 1600 may further include a network interface device
• the computer system 1600 also may include a video display unit 1610 (e.g., a liquid crystal display (LCD) or a cathode ray tube (CRT)), an alphanumeric input device 1612 (e.g., a keyboard), a cursor control device 1614 (e.g., a mouse), and a signal generation device 1616 (e.g., a speaker).
• a video display unit 1610 e.g., a liquid crystal display (LCD) or a cathode ray tube (CRT)
• an alphanumeric input device 1612 e.g., a keyboard
• a cursor control device 1614 e.g., a mouse
• a signal generation device 1616 e.g., a speaker
• the secondary memory 1618 may include a machine-accessible storage medium
• the software 1622 may also reside, completely or at least partially, within the main memory 1604 and/or within the processor 1602 during execution thereof by the computer system 1600, the main memory 1604 and the processor 1602 also constituting machine-readable storage media.
• the software 1622 may further be transmitted or received over a network 1620 via the network interface device 1608.
• machine-accessible storage medium 1631 is shown in an exemplary embodiment to be a single medium, the term “machine-readable storage medium” should be taken to include a single medium or multiple media (e.g., a centralized or distributed database, and/or associated caches and servers) that store the one or more sets of instructions.
• the term “machine-readable storage medium” shall also be taken to include any medium that is capable of storing or encoding a set of instructions for execution by the machine and that cause the machine to perform any one or more of the methodologies of the present invention.
• the term “machine-readable storage medium” shall accordingly be taken to include, but not be limited to, solid-state memories, and optical and magnetic media.
• a machine- accessible storage medium has instructions stored thereon which cause a data processing system to perform a method of optimizing parametric models for structural analysis using metrology of repeating structures on a semiconductor substrate or wafer.
• the method includes determining a first model of a structure.
• the first model is based on a first set of parameters.
• a set of spectral sensitivity variations data is determined for the structure.
• Spectral sensitivity is determined by derivatives of the spectra with respect to the first set of parameters.
• the first model of the structure is modified to provide a second model of the structure based on the set of spectral sensitivity variations data.
• the second model of the structure is based on a second set of parameters different from the first set of parameters.
• a simulated spectrum derived from the second model of the structure is then provided.
• measurements described above are performed with or without the presence of background light.
• a method described above is performed in a semiconductor, solar, light-emitting diode (LED), or a related fabrication process.
• a method described above is used in a stand-alone or an integrated metrology tool.
• FIG. 17 is a flowchart 1700 representing operations in a method for a building parameterized model and a spectral library beginning with sample spectra (e.g., originating from one or more workpieces), in accordance with an embodiment of the present invention.
• a set of material files are defined by a user to specify characteristics (e.g., refractive index or n, k values) of the material(s) from which the measured sample feature is formed.
• a scatterometry user defines a nominal model of the expected sample structure by selecting one or more of the material files to assemble a stack of materials corresponding to those present in the periodic grating features to be measured.
• a user-defined model may be further parameterized through definition of nominal values of model parameters, such as thicknesses, critical dimension (CD), sidewall angle (SWA), height (HT), edge roughness, corner rounding radius, etc. which characterize the shape of the feature being measured.
• model parameters such as thicknesses, critical dimension (CD), sidewall angle (SWA), height (HT), edge roughness, corner rounding radius, etc.
• simulated spectra for a given set of grating parameter values may be computed using rigorous diffraction modeling algorithms, such as Rigorous Coupled Wave Analysis (RCWA). Regression analysis is then performed at operation 1706 until the parameterized model converges on a set of parameter values characterizing a final profile model (for two-dimensional) that corresponds to a simulated spectrum which matches the measured diffraction spectra to a predefined matching criterion.
• the final profile model associated with the matching simulated diffraction signal is presumed to represent the actual profile of the structure from which the model was generated.
• the matching simulated spectra and/or associated optimized profile model can then be utilized at operation 1708 to build a library of simulated diffraction spectra by perturbing the values of the parameterized final profile model.
• the resulting library of simulated diffraction spectra may then be employed by a scatterometry measurement system operating in a production environment to determine whether subsequently measured grating structures have been fabricated according to specifications.
• Library generation 1708 may include a machine learning system, such as a neural network, generating simulated spectral information for each of a number of profiles, each profile including a set of one or more modeled profile parameters. In order to generate the library, the machine learning system itself may have to undergo some training based on a training data set of spectral information.
• Such training may be computationally intensive and/or may have to be repeated for different models and/or profile parameter domains.
• Considerable inefficiency in the computational load of generating a library may be introduced by a user' s decisions regarding the size of a training data set. For example, selection of an overly large training data set may result in unnecessary computations for training while training with a training data set of insufficient size may necessitate a retraining to generate a library.
• Figure 18 depicts a flowchart 1800 representing operations in a method of constructing and optimizing a library using an optical parametric model, in accordance with an embodiment of the present invention. Not every operation shown is always required. Some libraries may be optimized using a subset of the operations shown. It should be understood that some of these operations may be performed in a different sequence or that additional operations may be inserted into the sequence without departing from the scope of the present invention.
• a library is created using a parametric model. That parametric model may have been created and optimized using a process such as one of the processes described in association with flowcharts 100, 200 or 300.
• the library is preferably created for a subset of the available wavelengths and angles in order to keep the library size small and to speed the library match or search.
• the library is then used to match dynamic precision signal data as shown at operation 1802 and hence determine the precision or repeatability of the measurement using that library. If the resulting precision does not meet requirements (operation 1804), then the number of wavelengths and/or angles and/or polarization states used needs to be increased as shown at operation 1803 and the process repeated.
• any additional data that is available can be matched using that library as shown at operation 1805.
• the results from the larger set of data can be compared with reference data such as cross-section electron micrographs and also checked for consistency between wafers (for example, two wafers processed on the same equipment will usually show similar across-wafer variations) as shown at operation 1806.
• the library is ready for scatterometry measurements of production wafers (operation 1809). If the results do not meet expectations, then the library and/or parametric model need to be updated and the resulting new library retested (operation 1808).
• One or more embodiments of the present invention can used to determine what changes have to be made to the library or parametric model to improve the results.
• Figure 19 depicts a flowchart 1900 representing operations in a method of constructing and optimizing a real-time regression measurement recipe using an optical parametric model, in accordance with an embodiment of the present invention. Not every operation shown is always required. Some real-time regression measurement recipes may be optimized using a subset of the operations shown. It should be understood that some of these operations may be performed in a different sequence or that additional operations may be inserted into the sequence without departing from the scope of the present invention.
• a real-time regression measurement recipe is created using a parametric model. That parametric model may have been created and optimized using a process such as the method described in association with one or more of flowcharts 100, 200 or 300.
• the recipe is preferably created for a subset of the available wavelengths and angles in order to keep the computation time as short as possible.
• the recipe is then used to regress on the dynamic precision signal data as shown at operation 1902 and hence determine the precision or repeatability of the measurement using that library. If the resulting precision does not meet requirements (operation 1904), then the number of wavelengths and/or angles and/or polarization states used needs to be increased as shown at operation 1903 and the process repeated.
• Embodiments of the present invention can be used to determine which additional wavelengths, angles or incidence, azimuth angles and/or polarizations states to include in the recipe.
• any additional data that is available can be regressed using that recipe as shown at operation 1905.
• the results from the larger set of data can be compared with reference data such as cross-section electron micrographs and also checked for consistency between wafers (for example, two wafers processed on the same equipment will usually show similar across-wafer variations) as shown at operation 1906. If the results meet expectations, then the recipe is ready for scatterometry measurements of production wafers (operation 1909). If the results do not meet expectations, then the recipe and/or parametric model need to be updated and the resulting new recipe retested (operation 1908).
• One or more embodiments of the present invention can used to determine what changes have to be made to the recipe or parametric model to improve the results.
• the process of developing parametric models and libraries and real-time regression recipes that use those parametric models is often an iterative process.
• the present invention can significantly reduce the number of iterations required to arrive at parametric model and the libraries or real-time regression recipe using that model as compare with a trial-end-error approach.
• the present invention also significantly improves the measurement performance of the resulting parametric models, libraries and realtime regression recipes since the model parameters, wavelengths, angles of incidence, azimuthal angles and polarization states can all be chosen based on optimizing sensitivity and reducing correlations.
• embodiments of the present invention also include the use of the techniques related to machine learning systems such as neural networks and support vector machines to generate simulated diffraction signals.
• a method includes determining a first model of a structure.
• the first model is based on a first set of parameters.
• a set of spectral sensitivity variations data is determined for the structure.
• Spectral sensitivity is determined by derivatives of the spectra with respect to the first set of parameters.
• the first model of the structure is modified to provide a second model of the structure based on the set of spectral sensitivity variations data.
• the second model of the structure is based on a second set of parameters different from the first set of parameters.
• a simulated spectrum derived from the second model of the structure is then provided.
• the method further involves comparing the simulated spectrum to a sample spectrum derived from the structure.

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