WO2013146317A1 - シリコンベース電気光学装置 - Google Patents
シリコンベース電気光学装置 Download PDFInfo
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- WO2013146317A1 WO2013146317A1 PCT/JP2013/057270 JP2013057270W WO2013146317A1 WO 2013146317 A1 WO2013146317 A1 WO 2013146317A1 JP 2013057270 W JP2013057270 W JP 2013057270W WO 2013146317 A1 WO2013146317 A1 WO 2013146317A1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
- G02F1/2257—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure the optical waveguides being made of semiconducting material
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index
- G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/212—Mach-Zehnder type
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/104—Materials and properties semiconductor poly-Si
Definitions
- the present invention relates to a silicon-based electro-optical device that converts a high-speed electrical signal into an optical signal at high speed, which is necessary in the information processing and communication fields.
- the present invention relates to a silicon-based electro-optical device using a silicon-insulator-silicon capacitor structure formed on an on-insulator (SOI) substrate.
- SOI on-insulator
- CMOS complementary metal oxide semiconductor
- optical modulators and optical switches that change the refractive index using the thermo-optic effect of silicon are slow and can only be used at device speeds up to a modulation frequency of 1 Mbps. Therefore, in order to realize a high modulation frequency required for more optical communication systems, an optical modulator or an optical switch using an electro-optical effect that enables high-speed operation is required.
- a phase difference is given to one or both of the lights propagating through the two arms due to the refractive index change, and these lights are made to interfere with each other, thereby obtaining an intensity modulation signal of the light. It is done.
- the free carrier density in the electro-optic modulator can be changed by free carrier injection, accumulation, removal, or inversion.
- many of the electro-optic modulators that have already been studied have poor optical modulation efficiency, and the length necessary for optical phase modulation (hereinafter simply referred to as “optical phase modulation length”) is on the order of 1 mm, An injection current density higher than cm 3 is required. If the optical phase modulation length of the electro-optic modulator is long and the element size is large, it becomes more susceptible to the temperature distribution on the silicon platform, and the original electro-optic due to the refractive index change of the silicon layer due to the thermo-optic effect. The effect may be countered. Therefore, in order to realize a small size, high integration, and low power consumption of the electro-optic modulator, an element structure capable of obtaining high light modulation efficiency is required.
- Non-Patent Document 1 discloses a silicon-based electro-optic device having a rib waveguide structure on an SOI substrate.
- slab regions extending laterally on both sides of a rib waveguide structure made of an intrinsic semiconductor region are doped in p-type and n-type, respectively.
- the rib waveguide structure is formed using a silicon layer 1S on an SOI substrate including a support substrate 3 made of silicon and a buried oxide layer 2.
- the rib waveguide structure is a PIN diode type modulator that changes the free carrier density in the intrinsic semiconductor region by applying forward and reverse biases, and uses the carrier plasma effect to change the refractive index. It has a changing structure.
- intrinsic semiconductor silicon 1 is formed so as to include p + doped semiconductor silicon 4 formed by highly doping silicon layer 1S in contact with first electrode contact layer 6A. Yes.
- intrinsic semiconductor silicon 1 includes n + doped semiconductor silicon 5 that is highly doped with respect to silicon layer 1S, and second electrode contact layer 6B connected thereto.
- the p + and n + doped semiconductor silicon 4, 5 is doped to exhibit a carrier density of about 10 20 per cm 3 .
- the first and second electrode contact layers 6 ⁇ / b> A and 6 ⁇ / b> B are connected to a power source (not shown) through the electrode wiring 7.
- a forward bias to the PIN diode using the first and second electrode contact layers 6A and 6B, free carriers are injected into the waveguide.
- the refractive index of the intrinsic semiconductor silicon 1 changes, whereby phase modulation of light propagating in the waveguide is performed.
- Patent Document 1 discloses a silicon-based electro-optic device having a SIS (silicon-insulator-silicon) type structure formed on an SOI platform.
- a silicon-based electro-optical device described in Patent Document 1 includes an n-doped polycrystalline silicon 10 that is a main body region formed on a relatively thin silicon surface layer of an SOI substrate, and an n-doped polycrystalline silicon. 10 is made of p-doped semiconductor silicon 9 which is a gate region laminated so as to partially overlap with 10. A relatively thin dielectric layer 12 is formed at the laminated interface between the p-doped semiconductor silicon 9 and the n-doped polycrystalline silicon 10.
- the carrier density change is controlled by the external signal voltage via the electrode wiring 7 and the p + and n + doped semiconductor silicon 4 and 11. It is stipulated that
- Non-Patent Document 1 The operating speed of the silicon-based electro-optical device described in Non-Patent Document 1 is limited by the free carrier lifetime in intrinsic semiconductor silicon 1 and carrier diffusion when the forward bias is removed. Thus, related art PIN diode modulators typically have operating speeds in the range of 10-50 Mbps during forward bias operation. On the other hand, in order to shorten the carrier life, it is possible to increase the switching speed by introducing impurities into the intrinsic semiconductor silicon 1, but the introduced impurities reduce the light modulation efficiency. . The largest factor that affects the operating speed of the PIN diode type modulator is the RC time constant. In the case of the rib waveguide structure, the electrostatic capacity (C) when a forward bias is applied is equal to that of the PN junction.
- C electrostatic capacity
- optical phase modulation is performed by accumulating, removing, or inverting free carriers on both sides of the dielectric layer 12.
- the region where the carrier density changes dynamically becomes as thin as about several tens of nanometers. For this reason, an optical phase modulation length on the order of mm is required. As a result, there is a problem that the silicon-based electro-optical device becomes large and high-speed operation becomes difficult.
- the present invention solves the above-described problems, and achieves low current density, low power consumption, high modulation degree, low voltage drive, and high-speed modulation in a submicron in a silicon-based electro-optical device that can be integrated on a silicon substrate.
- An object of the present invention is to provide a silicon-based electro-optical device capable of realizing an optical modulator structure based on the carrier plasma effect, which can be realized in a region, at a low cost.
- the silicon-based electro-optical device is formed by laminating at least a part of a silicon semiconductor layer doped to exhibit the first conductivity type and a silicon semiconductor layer doped to exhibit the second conductivity type.
- the silicon-based electro-optical device of the present invention light modulation based on the carrier plasma effect that can realize low current density, low power consumption, high modulation degree, low voltage drive, and high-speed modulation in the submicron region.
- the vessel structure can be realized at low cost.
- FIG. 1 is a cross-sectional view of a silicon-based electro-optical device according to a first embodiment of the invention.
- 1 is a plan view of a silicon-based electro-optical device according to a first embodiment of the present invention, and is a plan view in a light propagation direction.
- FIG. FIG. 6 is a cross-sectional view of a silicon-based electro-optical device according to a second embodiment of the invention.
- FIG. 6 is a cross-sectional view of a silicon-based electro-optical device according to a third embodiment of the invention.
- FIG. 6 is a cross-sectional view of a silicon-based electro-optical device according to a fourth embodiment of the invention.
- FIG. 10 is a cross-sectional view of a silicon-based electro-optical device according to a fifth embodiment of the invention.
- FIG. 10 is a plan view of a silicon-based electro-optical device according to a fifth embodiment of the invention, and is a plan view in the light propagation direction. It is sectional drawing which shows the manufacturing process of the silicon base electro-optical apparatus which concerns on 1st Embodiment of this invention. It is a top view for demonstrating the structure of the Mach-Zehnder interferometer type
- FIG. 1 is a cross-sectional view of a silicon-based electro-optical device disclosed in Non-Patent Document 1.
- FIG. 1 is a cross-sectional view of a silicon-based electro-optical device disclosed in Patent Document 1.
- the silicon-based electro-optical device according to the embodiment of the present invention shown in FIGS. 1 to 13 utilizes an electro-optical effect (free carrier plasma effect).
- the outline of the optical phase modulation mechanism in silicon which is the principle of operation in the silicon-based electro-optical device of the present invention, will be described below.
- ⁇ n and ⁇ k represent the real part and the imaginary part of the refractive index change of the silicon semiconductor layer
- e is the charge
- ⁇ is the wavelength of light
- ⁇ 0 is the dielectric in vacuum
- N is the refractive index of intrinsic semiconductor silicon
- m e is the effective mass of the electron carrier
- m h is the effective mass of the hole carrier
- ⁇ e is the mobility of the electron carrier
- ⁇ h is the mobility of the hole carrier
- ⁇ N e is The electron carrier concentration change
- ⁇ N h is the hole carrier concentration change.
- the Si 1-x Ge x layer has a higher refractive index than the silicon semiconductor layer, there is an effect of improving the overlap between the region where the free carrier density changes and the optical field. Furthermore, the length of the active layer can be remarkably reduced by making the Si 1-x Ge x layer uneven as described above.
- the free carrier plasma effect is further enhanced by increasing the Ge composition in the Si 1-x Ge x layer.
- L in Equation (3) is the length of the active layer along the light propagation direction of the silicon-based electro-optical device.
- the amount of phase change is exerted as a great effect as compared with light absorption.
- the silicon-based electro-optical device described below can basically exhibit characteristics as a phase modulator.
- FIG. 1 shows a cross-sectional view of an electro-optic phase modulator (silicon-based electro-optic device) 101 according to the first embodiment to which the present invention is applied.
- Electro-optic phase modulator 101 Si 1-x Ge x consisting layer irregularities (hereinafter, simply referred to as "Si 1-x Ge x uneven layer") 13, a relatively thin dielectric layer (dielectric) 12 and N-doped polycrystalline silicon (silicon semiconductor layer exhibiting the second conductivity type) 10.
- the electro-optic phase modulator 101 is formed on an SOI substrate in which a support substrate 3, a buried oxide layer 2, and p-doped polycrystalline silicon (a silicon semiconductor layer exhibiting the first conductivity type) 9 are sequentially stacked. Yes.
- a portion of the n-doped polycrystalline silicon 10 that is in contact with the dielectric layer 12 is illustrated as an n-doped polycrystalline silicon 19.
- the present invention is characterized in that the relatively thin dielectric layer 12 is composed of at least one layer of silicon oxide, silicon nitride, hafnium oxide, zirconium oxide, and aluminum oxide. Further, the relatively thin dielectric layer 12 has a thickness of 0.1 nm to 50 nm.
- the relatively thin dielectric increases the dielectric constant and reduces the film thickness when free carriers are accumulated on both sides of the dielectric layer 12, thereby improving the modulation efficiency. It will be improved.
- an increase in electric capacity decreases the frequency band during high-speed operation, and therefore an optimum film thickness and material are applied to achieve the target modulation efficiency and high speed.
- the film thickness if it is thinner than 0.1 nm, there is a practical problem of leakage current, and if it is thicker than 50 nm, the modulation efficiency is greatly reduced. Therefore, it is preferable to design in the range of 0.1 nm to 50 nm.
- the Si 1-x Ge x concavo-convex layer 13 is provided on the surface of the p-doped semiconductor silicon 9 of the SOI substrate.
- the relatively thin dielectric layer 12 is formed on a part of the surface of the Si 1-x Ge x uneven layer 13 and the SOI layer. Therefore, not only the uppermost surface of the Si 1-x Ge x concavo-convex layer 13 but all exposed surfaces of the side surfaces and the depressions are covered with the dielectric layer 12.
- the n-doped polycrystalline silicon 10 is laminated so as to cover the surface irregularities on the dielectric layer 12. In order to reduce optical loss, the surface of the n-doped polycrystalline silicon 10 may be smoothed by polishing.
- An electrode wiring 7 for applying a driving voltage from the outside is connected to each of the p and n doped polycrystalline silicons 9 and 10. Further, p + and n + doped semiconductor silicons 4 and 11 subjected to high concentration doping are formed at connection portions between the p and n doped polycrystalline silicons 9 and 10 and the electrode wiring 7.
- the p + and n + doped semiconductor silicons 4 and 11 function as contacts of the electrode wiring 7, but the contact layers 6 are respectively provided at the interfaces between the p + and n + doped semiconductor silicon 4 and 11 and the electrode wiring 7 as necessary. It may be provided.
- the p- and n-doped polycrystalline silicons 9 and 10 are composed of at least one layer selected from the group consisting of polycrystalline silicon, amorphous silicon, strained silicon, single crystal silicon, and Si 1-x Ge x .
- the electro-optic phase modulator 101 by providing the Si 1-x Ge x uneven layer 13 at the SIS junction interface, the overlap between the optical field and the carrier density modulation region is increased. Further, by adopting the Si 1-x Ge x layer 13, a larger carrier plasma effect than that of the silicon semiconductor layer can be obtained, so that the size of the electro-optic phase modulator 101 can be reduced. Further, by further increasing the doping density of the p and n doped polycrystalline silicon 9 and 10 adjacent to the SIS junction interface, the series resistance component can be reduced and the RC time constant can be reduced.
- the electro-optic phase modulator 101 in order to reduce the light absorption loss due to the overlap between the region where the doping density of the p and n doped polycrystalline silicon 9 and 10 is increased and the optical field, Is a waveguide having a rib / ridge shape as shown in FIG.
- an electro-optic phase modulator capable of operating at high speed with small optical loss and RC time constant can be realized.
- the unevenness provided at the SIS junction interface is formed by forming the Si 1-x Ge x uneven layer 13 on the surface of the p-doped semiconductor silicon 9, the dielectric layer 12, and the n-doped polycrystalline silicon 10 on the dielectric layer 12. This is realized by stacking the layers.
- the unevenness interval (period) in the Si 1-x Ge x uneven layer 13 is equal to the thickness (hereinafter referred to as the maximum depletion layer thickness) W of the semiconductor layer in which free carriers are accumulated, removed, or inverted on both sides of the dielectric layer 12.
- W the thickness
- it is preferably 2 W or less.
- the maximum depletion layer thickness W in the thermal equilibrium state is given by the following equation (4).
- Equation (4) ⁇ s is the dielectric constant of the semiconductor layer, k is the Boltzmann constant, N c is the carrier density, ni is the intrinsic carrier concentration, and e is the charge amount.
- N c 10 17 / cm 3
- the maximum depletion layer thickness is about 0.1 ⁇ m, and as the carrier density increases, the depletion layer thickness, that is, the thickness of the region where the carrier density modulation occurs is thin.
- the height of the unevenness in the Si 1-x Ge x uneven layer 13 is determined when the effective refractive index acting on the optical signal electric field in the electro-optic phase modulator 101 is n eff and the wavelength of the optical signal is ⁇ . , ⁇ / n eff or less is preferable.
- FIG. 2 is a plan view of the electro-optic phase modulator 101 shown in FIG. 1 in the light propagation direction (Z direction shown in FIG. 1).
- accumulation of carriers, depletion, or inversion occurs on both sides of a relatively thin dielectric layer when an electric signal is applied as a driving voltage.
- the thickness of the region where the carrier density is modulated is estimated to be 100 nm or less. Therefore, the region where the carrier density is modulated with respect to the spread of the optical signal electric field is very small, and the modulation efficiency is generally poor.
- the region where the carrier density is modulated is the uneven region formed of the Si 1-x Ge x layer 13 having the SIS junction shape provided on the surface of the p-doped semiconductor silicon 9.
- the region where the carrier density is modulated is the uneven region formed of the Si 1-x Ge x layer 13 having the SIS junction shape provided on the surface of the p-doped semiconductor silicon 9.
- FIG. 3 shows a cross-sectional view of an electro-optic phase modulator 102 according to a second embodiment to which the present invention is applied.
- the same components as those of the electro-optic phase modulator 101 of the first embodiment are denoted by the same reference numerals, and the description thereof will be given. Is omitted.
- the surface of the p-doped semiconductor silicon 9 of the SOI substrate has two or more kinds of Si 1-x Ge x compositions in the direction orthogonal to the light transmission direction. Concavities and convexities made of the laminated structure 14 are formed.
- FIG. 3 illustrates a laminated structure 14 including two types of Si 1-x Ge x uneven layers 14a and 14b having different Ge compositions x.
- the stacked structure 14 of two or more types of Si 1-x Ge x concavo-convex layers having different Ge compositions By providing the stacked structure 14 of two or more types of Si 1-x Ge x concavo-convex layers having different Ge compositions, crystal defects when the Ge composition is increased are reduced, and the dielectric layer 12 It becomes possible to realize a layer structure in which the carrier plasma effect near the interface is further enhanced.
- FIG. 4 shows a cross-sectional view of an electro-optic phase modulator 103 according to a third embodiment to which the present invention is applied.
- a Si 1-x Ge x concavo-convex layer 15 whose composition is modulated in the film thickness direction is formed on the surface of the SOI layer.
- crystal defects are increased when the Ge composition x is increased, and the carrier plasma effect near the interface with the dielectric layer 12 is further improved. It is possible to realize a layer structure.
- FIG. 5 shows a cross-sectional view of an electro-optic phase modulator 104 according to a fourth embodiment to which the present invention is applied.
- the unevenness of the Si 1-x Ge x uneven layer 16 on the surface of the SOI layer is relative to the propagation direction of the optical signal (Z direction shown in FIG. 5).
- Z direction shown in FIG. 5 the propagation direction of the optical signal
- X direction shown in FIG. 5 the vertical direction
- FIG. 6 shows a cross-sectional view of an electro-optic phase modulator 105 according to a fifth embodiment to which the present invention is applied.
- the unevenness of the Si 1-x Ge x uneven layer 17 on the surface of the SOI layer is parallel to the propagation direction of the optical signal (see FIG. 6). (Z direction shown).
- FIG. 7 is a plan view of the electro-optic phase modulator 105 in the light propagation direction.
- the interval between the uneven shapes on the surface is preferably 2 W or less.
- the unevenness of the Si 1-x Ge x uneven layer 17 may be periodically formed so as to reduce the group velocity of the optical signal.
- the effective refractive index acting on the optical signal electric field is n eff and the optical signal wavelength is ⁇
- it is aperiodic so as to have an interval of ⁇ / n eff or less. May be formed.
- FIG. 8A is a cross-sectional view of an SOI substrate for forming an electro-optic phase modulator.
- the SOI substrate has a structure in which a p-type doped polycrystalline silicon 9 of about 100 to 1000 nm is laminated on the buried oxide layer 2 on the support substrate 3.
- a structure having a buried oxide layer thickness of 1000 nm or more In order to reduce optical loss, it is preferable to use a structure having a buried oxide layer thickness of 1000 nm or more.
- the p-type doped polycrystalline silicon 9 on the buried oxide layer 2 is a p-type dopant by using a substrate previously doped so as to exhibit the first conductivity type (p-type) or by ion implantation or the like. Heat treatment may be performed after the surface layer is doped with P or B.
- an oxide film mask 18 for forming irregularities made of a Si 1-x Ge x layer is formed on the p-type doped polycrystalline silicon 9 by a low pressure CVD method or the like. Form by the method. Thereafter, an opening pattern having a width of, for example, about 200 nm is formed in the light modulation portion by photolithography or electron beam lithography. Thereafter, the Si 1-x Ge x uneven layer 13 having a height of, for example, about 50 to 100 nm is selectively grown on the opening pattern by an ultrahigh vacuum CVD method or a low pressure CVD method.
- the hard mask layer 20 is patterned by photolithography or electron beam lithography. Further, by using the formed pattern, the non-doped polycrystalline silicon 19n is formed into a rib-type waveguide shape by a reactive plasma etching method or the like so that the width of the optical waveguide structure is 0.3 ⁇ m or more and 2 ⁇ m or less in the light modulation portion. Process.
- a p + doped semiconductor silicon 4 is formed on the p-type doped polycrystalline silicon 9 which is an SOI layer by ion implantation.
- an oxide film clad layer 8 is formed by a film forming method such as a plasma CVD method, and planarized by CMP.
- a polycrystalline silicon layer serving as an upper electrode extraction layer is stacked, and n-type conductivity is exhibited together with non-doped polycrystalline silicon 19n by n-type ion implantation. Dope treatment. Further, the non-doped polycrystalline silicon 19n may be doped during film formation so as to exhibit the n type.
- an n + doped polycrystalline silicon 11 is formed in the upper electrode lead layer of the n doped polycrystalline silicon 10 by ion implantation.
- the oxide film cladding layer 8 is stacked by plasma CVD or the like, and after forming the contact hole 21 by reactive etching, p + doped semiconductor silicon 4 and n + doped polycrystalline silicon 11 are formed.
- An electrode contact layer 6 is formed on each surface.
- the electrode contact layer 6 may be formed of a silicide layer or the like by laminating a metal such as Ni on the semiconductor silicon layer and annealing it.
- a metal layer such as Ti / TiN / Al (Cu) or Ti / TiN / W is formed to fill the contact hole 21 by sputtering or CVD, and the reaction
- the electrode wiring 7 is formed by patterning by reactive etching. Formation of the electrode wiring 7 enables connection with the drive circuit.
- FIG. 9 is a configuration diagram of an MZM type optical intensity modulator (Mach-Zehnder interferometer type structure) 206 according to the sixth embodiment to which the present invention is applied.
- the MZM type light intensity modulator 206 includes a first arm 22 and a second arm 23 in which the electro-optic phase modulators of any of the first to fifth embodiments are arranged in parallel.
- An optical branching structure 25 that branches light on the input side of the first and second arms 22 and 23 and an optical coupling structure 26 that couples on the output side are connected.
- the phase modulation of the optical signal is performed by the first and second arms 22 and 23, and then phase interference is performed by the optical coupling structure 26, whereby the input light is modulated by the light intensity. Converted to a signal.
- the input light is branched so as to have the same power as that of the first and second arms 22 and 23 by the light branching structure 25 arranged on the input side.
- the carrier accumulation mode the refractive index acting on the optical signal electric field in the electro-optical device is reduced, and in the carrier removal (depletion) mode, the refractive index acting on the optical signal electric field is increased, and the light in both arms The signal phase difference is maximized.
- Optical intensity modulation occurs by combining the optical signals transmitted through both arms by the optical coupling structure on the output side.
- the MZM type light intensity modulator 206 having the above-described configuration, it is possible to modulate the light intensity of the input light with low current density, low power consumption, high modulation degree, low voltage drive, and high speed modulation.
- FIG. 10 is a configuration diagram of an MZM type light intensity modulator 207 according to the seventh embodiment to which the present invention is applied.
- the MZM light intensity modulator 207 has a configuration in which the MZM light intensity modulators 206 are arranged in parallel. With the above configuration, the same effect as that of the MZM type light intensity modulator 206 can be obtained, and parallel processing in the light intensity modulation of input light can be performed.
- FIG. 11 is a configuration diagram of an MZM type light intensity modulator 208 according to the eighth embodiment to which the present invention is applied.
- the MZM light intensity modulator 208 has a configuration in which a plurality of MZM light intensity modulators 206 or MZM light intensity modulators 207 are arranged in series.
- the MZM type optical intensity modulators 207 and 208 can be applied to an optical modulator having a higher transfer rate, a matrix optical switch, or the like.
- Example 1 The electro-optic phase modulator 101 according to the first embodiment is manufactured by the steps shown in FIGS.
- the wavelength ⁇ of the input light was set to 1550 nm, the wavelength was taken into consideration, and other conditions were set as.
- the thickness W of the semiconductor layer in which free carriers are accumulated, removed, or inverted on both sides of the dielectric layer 12 is set to 160 nm, and the unevenness interval of the Si 1-x Ge x uneven layer 13 is approximately 160 nm, which is the same as W. It was as follows.
- Example 1 An electro-optic phase modulator was manufactured under the same conditions as in Example 1 except that the Si 1-x Ge x uneven layer 13 was not provided with unevenness.
- FIG. 12 shows the dependence of the phase shift amount on the length of the optical signal propagation direction in the electro-optic phase modulator fabricated in Example 1 and Comparative Example 1. It was confirmed that the light modulation efficiency in the electro-optic phase modulator of Example 1 was remarkably improved by forming irregularities with an interval of about 160 nm or less, which is the same as the thickness W of carrier modulation. It was confirmed that the light modulation efficiency was improved by increasing the depth of the unevenness of the Si 1-x Ge x uneven layer 13.
- FIG. 13 shows the carrier density dependence of the operating frequency band in the electro-optic phase modulator manufactured in Example 1 and Comparative Example 1.
- the operating frequency band of optical phase modulation has a trade-off between the effect of reducing the size by improving the modulation efficiency and the effect of increasing the electric capacity by providing the unevenness.
- the effective refractive index acting on the optical signal electric field is n eff and the optical signal wavelength is ⁇
- the frequency band becomes wide when the depth of the unevenness is ⁇ / n eff or less. It was confirmed that a high-speed operation of 10 GHz or more is possible by setting the carrier density to about 10 18 / cm 3 .
- the carrier mobility in the polycrystalline silicon layer is a problem in high-speed operation. Therefore, increase the particle size by recrystallization by annealing treatment, improve carrier mobility, or improve the crystal quality of the n-doped polycrystalline silicon 10 by using an epitaxial lateral growth (ELO) method or the like. Is effective.
- ELO epitaxial lateral growth
- Example 2 Using the electro-optic phase modulator manufactured in Example 1, the MZM type light intensity modulator 206 according to the sixth embodiment was manufactured. In the fabricated MZM type optical intensity modulator, it was confirmed that optical intensity modulation at 40 Gbps or higher and transmission of the modulated optical signal were possible, which was the same as that of a practical optical communication system.
- Silicon-based electro-optics that realize an optical modulator structure based on the carrier plasma effect that can achieve low cost, low current density, low power consumption, high modulation depth, low voltage drive, and high-speed modulation in the submicron region An apparatus can be provided.
Abstract
Description
p+およびn+ドープ半導体シリコン4,5は、1cm3毎に約1020のキャリア密度を呈するようにドープ処理される。
なお、以下の説明で用いる図面は、特徴をわかりやすくするために、便宜上特徴となる部分を拡大して示している場合があり、各構成要素の寸法比率などが実際と同じであるとは限らない。
前述したように、純粋な電気光学効果はシリコン内には存在しない、または非常に弱いため、自由キャリアプラズマ効果と熱光学効果のみがシリコンベース電気光学装置の光変調動作に用いられる。すなわち、シリコンベース電気光学装置において、本発明が目的とするGbps以上の高速動作を実現するためには、自由キャリアプラズマ効果のみが効果的である。自由キャリアプラズマ効果は、下記の式(1),(2)の1次近似値で説明される。
本発明を適用した第1実施形態に係る電気光学位相変調器(シリコンベース電気光学装置)101の断面図を図1に示す。
電気光学位相変調器101は、Si1-xGex層からなる凹凸(以降、単に「Si1-xGex凹凸層」と称する)13と、比較的薄い誘電体層(誘電体)12と、nドープ多結晶シリコン(第2の導電タイプを呈するシリコン半導体層)10と、を有する。また、電気光学位相変調器101は、支持基板3、埋め込み酸化層2、pドープ多結晶シリコン(第1の導電タイプを呈するシリコン半導体層)9が順次積層されてなるSOI基板上に形成されている。なお、図1では、nドープ多結晶シリコン10のうち、誘電体層12に接する部分をnドープ多結晶シリコン19として図示している。
p及びnドープ多結晶シリコン9,10には、それぞれに外部から駆動電圧を印加するための電極配線7が接続されている。また、p及びnドープ多結晶シリコン9,10と電極配線7のそれぞれの接続部分には、高濃度ドープ処理されたp+及びn+ドープ半導体シリコン4,11が形成されている。なお、p+及びn+ドープ半導体シリコン4,11は、電極配線7のコンタクトとして機能するが、必要に応じてp+及びn+ドープ半導体シリコン4,11と電極配線7との界面に、各々コンタクト層6を設けてもよい。
p及びnドープ多結晶シリコン9,10は、多結晶シリコン、アモルファスシリコン、歪シリコン、単結晶シリコン、Si1-xGexからなる群から選択される少なくとも一層からなる。
次いで、本発明を適用した第2実施形態に係る電気光学位相変調器102の断面図を図3に示す。なお、以下の第2~第5の実施形態に係る電気光学位相変調器の構成において、第1実施形態の電気光学位相変調器101と同一の構成には、同一の符号を付し、その説明を省略する。
次いで、本発明を適用した第3実施形態に係る電気光学位相変調器103の断面図を図4に示す。電気光学位相変調器103では、図4に示すように、SOI層の表面に、膜厚方向に組成変調されたSi1-xGex凹凸層15が形成されている。膜厚方向にSi1-xGexの組成を変調することにより、Geの組成xを増やした時の結晶欠陥を低減すると共に、誘電体層12との界面付近のキャリアプラズマ効果をさらに向上させた層構成を実現することが可能となる。
次いで、本発明を適用した第4実施形態に係る電気光学位相変調器104の断面図を図5に示す。電気光学位相変調器104では、図5に示すように、SOI層の表面上のSi1-xGex凹凸層16の凹凸が、光信号の伝播方向(図5に示すZ方向)に対して、垂直な方向(図5に示すX方向)に形成されている。これにより、光フィールドとキャリア変調領域との重なりが改善され、より大きな変調効率が得られる。
次いで、本発明を適用した第5実施形態に係る電気光学位相変調器105の断面図を図6に示す。電気光学位相変調器105では、図6に示すように、SOI層の表面上のSi1-xGex凹凸層17の凹凸が、光信号の伝播方向に対して、平行な方向(図6に示すZ方向)に形成されている。
図9は、本発明を適用した第6実施形態に係るMZM型光強度変調器(マッハ-ツェンダー干渉計型の構造)206の構成図である。MZM型光強度変調器206は、上記の第1~第5の実施形態のうちのいずれかの電気光学位相変調器が平行に配置された第1のアーム22および第2のアーム23からなり、第1および第2のアーム22,23の入力側で光を分岐する光分岐構造25と、出力側で結合する光結合構造26が接続して設けられている。MZM型光強度変調器206では、第1および第2のアーム22,23で光信号の位相変調が行われた後、光結合構造26により位相干渉が行われることにより、入力光が光強度変調信号に変換される。
上記構成により、MZM型光強度変調器206と同様の効果が得られると共に、入力光の光強度変調における並列処理が可能となる。
上記構成により、MZM型光強度変調器207,208は、より高い転送レートを有する光変調器やマトリックス光スイッチなどへ応用することができる。
上記の第1実施形態に係る電気光学位相変調器101を図8(a)~(j)に示す工程により作製した。作製時においては、入力光の波長λを1550nmとして、波長を勘案し、その他の条件を・・・とした。
また、自由キャリアが誘電体層12の両側で蓄積、除去、または反転する半導体層の厚さWを160nmとし、Si1-xGex凹凸層13の凹凸の間隔をWと同程度の160nm程度以下とした。
Si1-xGex凹凸層13に凹凸を設けないこと以外は、実施例1と同じ条件で電気光学位相変調器を作製した。
実施例1で作製した電気光学位相変調器を用いて、上記の第6実施形態に係るMZM型光強度変調器206を作製した。
作製したMZM型光強度変調器においては、実用的な光通信システムと同程度の40Gbps以上での光強度変調、および、変調された光信号の送信が可能であることを確認した。
2 埋め込み酸化層
3 支持基板
4 p+ドープ半導体シリコン
6 コンタクト層
6A 第1のコンタクト層
6B 第2のコンタクト層
7 電極配線
8 酸化膜クラッド層
9 pドープ半導体シリコン
10 nドープ多結晶シリコン
11 n+ドープ多結晶シリコン
12 誘電体層
13 Si1-xGex凹凸層(Si1-xGex(x=0.01~0.9)層からなる凹凸)
14 二種類以上のSi1-xGex組成の積層構造からなる凹凸
15 組成変調されたSi1-xGex層からなる凹凸
16 Si1-xGex凹凸層(Si1-xGex(x=0.01~0.9)層からなる凹凸)
17 Si1-xGex凹凸層(Si1-xGex(x=0.01~0.9)層からなる凹凸)
18 酸化膜マスク、
19 nドープ多結晶シリコン、
19n ノンドープ多結晶シリコン
20 SiNxハードマスク層
22 第1のアーム
23 第2のアーム
24 電気光学装置駆動用電極パッド
25 光分岐構造
26 光結合構造
Claims (23)
- 第1の導電タイプを呈するようにドープ処理された第1のシリコン半導体層と第2の導電タイプを呈するようにドープ処理された第2のシリコン半導体層の少なくとも一部が積層された構造からなり、前記積層された第1のシリコン半導体層と第2のシリコン半導体層との界面に、比較的薄い誘電体層が形成されたSIS型接合において、前記第1および第2のシリコン半導体層に結合された電気端子からの電気信号により、自由キャリアが、前記比較的薄い誘導体層の両側で蓄積、除去、または反転することにより、光信号電界に作用する自由キャリア濃度が変調されることを利用した電気光学装置であって、
前記第1および第2の導電タイプを呈する第1および第2のシリコン半導体層が積層された領域において、
前記第1のシリコン半導体層の表面にSi1-xGex(x=0.01~0.9)層からなる凹凸が設けられており、この上に前記比較的薄い誘電体層が形成され、さらに前記第2の導電タイプを呈する第2のシリコン半導体層が積層されていることを特徴とするシリコンベース電気光学装置。 - 前記第1のシリコン半導体層の表面に設けられたSi1-xGex(x=0.01~0.9)層からなる凹凸が、少なくとも2種類以上のSi1-xGex(x=0.01~0.9)組成の積層構造からなることを特徴とする請求項1に記載のシリコンベース電気光学装置。
- 前記第1のシリコン半導体層の表面に設けられたSi1-xGex(x=0.01~0.9)層からなる凹凸が、Si1-xGex(x=0.01~0.9)の組成が膜厚方向に変調された構造からなることを特徴とする請求項1に記載のシリコンベース電気光学装置。
- 前記第1のシリコン半導体層の表面に設けられたSi1-xGex(x=0.01~0.9)層からなる凹凸が、少なくとも2種類以上のSi1-xGex(x=0.01~0.9)組成からなることを特徴とする請求項1に記載のシリコンベース電気光学装置。
- 前記第1のシリコン半導体層の表面に設けられたSi1-xGex(x=0.01~0.9)層からなる凹凸が、格子歪のあるSi1-xGex(x=0.01~0.9)層からなることを特徴とする請求項1に記載のシリコンベース電気光学装置。
- 前記第1のシリコン半導体層の表面に設けられたSi1-xGex(x=0.01~0.9)層からなる凹凸が、光信号の伝播方向に対して、垂直な方向に形成されていることを特徴とする請求項1~5のいずれか一項に記載のシリコンベース電気光学装置。
- 前記第1のシリコン半導体層の表面に設けられたSi1-xGex(x=0.01~0.9)層からなる凹凸が、光信号の伝播方向に対して、平行な方向に形成されていることを特徴とする請求項1~5のいずれか一項に記載のシリコンベース電気光学装置。
- 前記第1のシリコン半導体層の表面に設けられたSi1-xGex(x=0.01~0.9)層からなる凹凸の間隔が、自由キャリアが、前記比較的薄い誘電体の両側で蓄積、除去、または反転する半導体層の厚さWに対して、2W以下であることを特徴とする請求項1~5のいずれか一項に記載のシリコンベース電気光学装置。
- 前記第1のシリコン半導体層の表面に設けられたSi1-xGex(x=0.01~0.9)層からなる凹凸の高さが、前記電気光学装置における光信号電界が作用される実効的な屈折率をneff、光信号波長をλとした時、λ/neff以下であることを特徴とする請求項1~5のいずれか一項に記載のシリコンベース電気光学装置。
- 自由キャリアが、前記比較的薄い誘電体層の両側で蓄積、除去、または反転する領域内に、光信号電界がピーク強度を有する領域が配置されることを特徴とする請求項1~5のいずれか一項に記載のシリコンベース電気光学装置。
- 前記第1および第2の導電タイプを呈するようにドープ処理されたシリコン半導体層が、多結晶シリコン、アモルファスシリコン、歪シリコン、単結晶シリコン、Si1-xGexからなる群から選択される少なくとも一層からなることを特徴とする請求項1~5のいずれか一項に記載のシリコンベース電気光学装置。
- 前記第1および第2のドープ領域に形成された電気端子は、光信号損失を小さくするように、低い直列抵抗を与えながら配置されていることを特徴とする請求項1~5のいずれか一項に記載のシリコンベース電気光学装置。
- 光信号が伝送される領域における、前記第1の導電タイプを呈するようにドープ処理されたシリコン半導体層と第2の導電タイプを呈するようにドープ処理されたシリコン層の少なくとも一部が積層された構造が、リブあるいはリッジ型光導波路構造を呈することを特徴とする請求項1~5のいずれか一項に記載のシリコンベース電気光学装置。
- 光信号が伝送される領域における、前記第1の導電タイプを呈するようにドープ処理されたシリコン半導体層と第2の導電タイプを呈するようにドープ処理されたシリコン層の少なくとも一部が積層された構造が、スラブ型光導波路構造を呈することを特徴とする請求項1~5のいずれか一項に記載のシリコンベース電気光学装置。
- 少なくとも1つの電気変調信号が前記第1および第2の電気端子の少なくとも1つに入力として加えられ、光変調信号に変換されることを特徴とする、請求項1~5のいずれか一項に記載のシリコンベース電気光学装置。
- 前記シリコンベース電気光学装置が平行に配置された第1のアームおよび第2のアームからなり、これに入力側で結合する光分岐構造と、出力側で結合する光結合構造が接続して設けられ、前記第1のアームおよび第2のアームで光信号の位相変調が行われ、前記光結合構造により位相干渉が行われることにより、光強度変調信号に変換されることを特徴とするマッハ-ツェンダー干渉計型の構造からなる、請求項1~5のいずれか一項に記載のシリコンベース電気光学装置。
- 前記第1のアームと第2のアームが非対称な構成となっている、請求項16に記載のシリコンベース電気光学装置。
- 前記光分岐構造は、前記第1のアームおよび第2のアームに対して、1対1以外の入力信号分配比を与えることを特徴とする、請求項16に記載のシリコンベース電気光学装置。
- 所定の組合せで配置された複数の別個の干渉計を備える、請求項16に記載のマッハ-ツェンダー干渉計型の構造。
- 前記複数のマッハ-ツェンダー干渉計は、並列に配置されていることを特徴とする、請求項19に記載のマッハ-ツェンダー干渉計の構造。
- 前記複数のマッハ-ツェンダー干渉計は、直列に配置されていることを特徴とする、請求項19に記載のマッハ-ツェンダー干渉計の構造。
- 前記比較的薄い誘電体が、酸化シリコン、窒化シリコン、酸化ハフニウム、酸化ジルコニウム、酸化アルミニウムの少なくとも一層からなることを特徴とする請求項1~8のいずれか一項に記載のシリコンベース電気光学装置。
- 前記比較的薄い誘電体の層厚が、0.1nm以上50nm以下であることを特徴とする請求項1~8のいずれか一項に記載のシリコンベース電気光学装置。
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US20150049978A1 (en) | 2015-02-19 |
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