WO2013131824A1 - Composant opto-électronique - Google Patents

Composant opto-électronique Download PDF

Info

Publication number
WO2013131824A1
WO2013131824A1 PCT/EP2013/054176 EP2013054176W WO2013131824A1 WO 2013131824 A1 WO2013131824 A1 WO 2013131824A1 EP 2013054176 W EP2013054176 W EP 2013054176W WO 2013131824 A1 WO2013131824 A1 WO 2013131824A1
Authority
WO
WIPO (PCT)
Prior art keywords
phosphor
electromagnetic
radiation
mol
optoelectronic component
Prior art date
Application number
PCT/EP2013/054176
Other languages
German (de)
English (en)
Inventor
Alexander Baumgartner
Kirstin Petersen
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2013131824A1 publication Critical patent/WO2013131824A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77347—Silicon Nitrides or Silicon Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Definitions

  • the present invention relates to an optoelectronic component.
  • Radiation emitting components such as
  • LEDs Light-emitting diodes
  • converter materials in order to convert the radiation emitted by a radiation source into radiation with a changed, longer wavelength.
  • the efficiency of the converter material is generally dependent on its position of the absorption maximum with respect to the wavelength range of the electromagnetic
  • Aging phenomena of the device may be the result of high temperatures and / or high humidity during operation of the device, which can lead to failure of the optoelectronic device in the worst case.
  • An object to be solved is to specify an optoelectronic component which has improved stability
  • An optoelectronic component comprises a layer sequence with an active region which emits electromagnetic primary radiation
  • the conversion material comprises a first phosphor having the general composition A 3 B 5 O 1 2 and a second
  • a phosphor having the general composition M 2 S1 5 N 8 wherein A comprises one of the elements Y, Lu, Gd and / or Ce or combinations of Y, Lu, Gd and / or Ce, wherein B is AI, and wherein M is a combination from Ca, Sr, Ba and Eu.
  • the first phosphor and / or the second phosphor need not necessarily have mathematically exact compositions according to the above formulas. Rather, they may, for example, have one or more additional dopants, as well as additional constituents. For the sake of simplicity, however, the above formulas contain only the essential components.
  • component here not only finished components, such as light-emitting diodes (LEDs) or laser diodes are to be understood, but also substrates and / or
  • Composite of a copper layer and a semiconductor layer constitute a component and a component of a
  • the optoelectronic component according to the invention can be, for example, a thin-film semiconductor chip, in particular a thin-film LED chip.
  • layer sequence is understood as meaning a layer sequence comprising more than one layer, for example a sequence of a p-doped and an n-doped semiconductor layer, wherein the layers are arranged one above the other.
  • one or at least two elements selected from the group comprising Y, Lu, Gd and Ce can be used, the sum of which amounts to 100%.
  • the proportions of Ca, Sr, Ba and Eu as component M in the second phosphor give a total of 100%.
  • the component M in the second phosphor is composed of both Ca and Sr, and Ba and Eu, and the sum of the proportions of Ca and Sr and Ba and Eu is 100%. It follows that no proportion of Ca or Sr or Ba or Eu as component M is 0.
  • color specifications with respect to emitting phosphors denote the respective spectral range of the electromagnetic radiation.
  • electromagnetic radiation in particular electromagnetic radiation having one or more wavelengths or wavelength ranges from an ultraviolet to infrared spectral range, also referred to as light.
  • light may be visible light and wavelengths or wavelength ranges from a visible spectral range between about 350 nm and about 800 nm
  • Visible light can be here and below
  • white light or light with a white light or color impression here and in the following can light with a
  • Color locus which corresponds to the color locus of a planck blackbody radiator or by less than 0.07 and preferably by less than 0.05, for example 0.03, in cx and / or cy color coordinates from the color locus of a
  • designated luminous impression are caused by light, which has a color rendering index (CRI) of greater than or equal to 60, preferably greater than or equal to 80, known to a person skilled in the art.
  • CRI color rendering index
  • the inventors have surprisingly found that in the operation of an optoelectronic device a
  • Phosphor and the second phosphor increased stability of the optoelectronic device at high
  • the layer sequence may be a semiconductor layer sequence, wherein the in the
  • Semiconductor layer sequence occurring semiconductor materials are not limited, provided that at least partially
  • Range may be based on, for example, nitride compound semiconductor materials.
  • a nitride compound semiconductor material preferably comprises or consists of Al n Ga m In n m , where 0 -S n ⁇ 1 , 0 -S m ⁇ 1 and n + m ⁇ 1.
  • this material does not necessarily have to have a mathematically exact composition according to the above formula, but rather it can be, for example, one or more dopants and additional constituents
  • the above formula contains only the essential constituents of the crystal lattice (Al, Ga, In, N), even if these can be partially replaced and / or supplemented by small amounts of further substances.
  • the semiconductor layer sequence can be used as active region
  • a conventional pn junction for example, a conventional pn junction, a
  • Double heterostructure a single quantum well structure (SQW structure) or a multiple quantum well structure (MQW structure) have.
  • the semiconductor layer sequence can be next to the active region comprises further functional layers and functional regions, such as p- or n-doped ones
  • Charge carrier transport layers ie electron or
  • Such structures include the active region or the further functional layers and
  • OLED organic light emitting diode
  • the second phosphor for example of the type M2Si5Ng ⁇ shows a much higher stability at high temperatures, such as 85 ° C to 120 ° C, and / or at varying ambient temperatures and currents or currents.
  • the second phosphor for example of the type M2Si5Ng, without further
  • the color locus of the second phosphor of the type M2Si5 g can be adjusted by varying the ratio of the cations of the component M, Ca 2+ , Sr 2+ , Ba 2+ and Eu 2+
  • secondary electromagnetic radiation can be shifted toward longer wavelengths by reducing the average ionic size of the cations Ca 2+ , Sr 2+ , Ba 2+ or by increasing the Eu content in the second phosphor.
  • the second phosphor is contained as part of the component M to a proportion of 2.5 mol% to 25 mol%.
  • the second phosphor may contain Ba in a proportion of greater than or equal to 40 mol%, for example 40 mol% to 70 mol%, preferably greater than or equal to 50 mol%.
  • the second phosphor Eu contains in a proportion of 0.5 mol% to 10 mol%, preferably 2 mol% to 6 mol%, particularly preferably 4 mol%. In this case, Eu can serve for activation and / or doping of the second phosphor.
  • the second phosphor Sr as part of the component M to a proportion of 20 mol% to 50 mol%, in particular 30 mol% to 40 mol%, for example 36 mol% included.
  • the second phosphor has the composition
  • Ba, Ca and Eu are in the second phosphor with the
  • Color rendering index (Ra8, CRI, R9) achieved.
  • the first and second phosphors may be formed as particles.
  • the component A of the first phosphor having the general composition A 3 B 5 O 1 2 may be an activator and / or
  • Dopant include. One on the wavelength of
  • electromagnetic radiation optimally adapted Composition of the first phosphor can be achieved by varying the ratios (Y, Lu, Gd, Ce) to Al.
  • the first comprises
  • Phosphor Ce as component A in a proportion of 0.5 mol% to 5 mol%, preferably from 2.5 mol% to 5 mol%,
  • Ce may serve as activator and / or dopant in the first phosphor. Due to the high concentration of Ce as activator in the first phosphor and a good match of the absorption maximum of the first phosphor with the primary electromagnetic radiation results in a higher conversion efficiency of the first
  • Phosphor compared to conventional phosphors, such as yellow or green emitting phosphors.
  • the first phosphor is long-term stable and improves temperature stability.
  • the component A of the first phosphor may comprise Y.
  • Y may be present in a proportion in the first phosphor of from 95 mol% to 99.5 mol%, for example, 99 mol%.
  • Lu in the component A, Lu may be present at a level of from 95 mol% to 99.5 mol%, for example 99 mol%.
  • the primary electromagnetic radiation has a wavelength in the range 445 nm to 565 nm. According to a further embodiment, the
  • Conversion material is the color point of the total emission of the optoelectronic device even when changing the
  • Total emission is enhanced by the optimized interaction of the primary electromagnetic radiation with the sensitivity of the blue receptor in the human eye (CIE-Z,
  • the first phosphor has a
  • the electromagnetic component in the operation of the optoelectronic component, the electromagnetic
  • electromagnetic primary radiation is arranged electromagnetic primary radiation and is suitable, the electromagnetic primary radiation
  • Wavelength range to emit
  • An area designed as a layer, foil or potting may comprise the conversion material comprising the first and second luminescent material, wherein the conversion material is arranged or applied on or above the layer sequence with an active area.
  • Conversion material may continue from
  • Sub-layers or sub-areas are composed, wherein in the individual sub-layers or sub-areas
  • Conversion region is arranged directly in direct mechanical and / or electrical contact on the layer sequence with an active area. Furthermore, it can also mean that the conversion range is indirect
  • one or more first and second phosphors in the conversion material can be homogeneous or with
  • Concentration gradients in a matrix material distributed or embedded are suitable as
  • Matrix material may be selected from a group comprising siloxanes, epoxies, acrylates, methyl methacrylates, imides, carbonates, olefins, styrenes, urethanes, their derivatives and mixtures, copolymers or compounds thereof, which compounds are in the form of monomers, oligomers or polymers can.
  • the matrix material may comprise or be an epoxy resin, polymethylmethacrylate (PMMA), polystyrene, polycarbonate, polyacrylate, polyurethane or a silicone resin such as polysiloxane or mixtures thereof.
  • a potting may comprise the conversion material and a potting compound.
  • the potting may comprise one or more fillers.
  • the potting can for example cohesively through the potting compound with the layer sequence with the active Be connected to the area.
  • the potting compound can
  • polymeric material for example, be polymeric material.
  • it may be silicone, a methyl-substituted silicone, for example poly (dimethylsiloxane) and / or
  • Silicone for example poly (dicyclohexyl) siloxane, or a combination thereof.
  • the conversion material can additionally a
  • Filler such as a metal oxide, such as
  • Titanium dioxide, zirconia, zinc oxide, alumina, a salt such as barium sulfate and / or glass particles The degree of filling of the filler in, for example, the
  • Conversion material may be greater than 20% by weight, for example 25 to 30% by weight.
  • the electromagnetic primary radiation and secondary electromagnetic radiation may be one or more wavelengths and / or wavelength ranges in an infrared to
  • Ultraviolet wavelength range in particular in a visible wavelength range. It can do that
  • monochrome wavelength range can have.
  • Spectrum of the electromagnetic primary radiation and / or the spectrum of the electromagnetic secondary radiation can alternatively be broadband, that is, that the
  • Electromagnetic secondary radiation may have a mixed-colored wavelength range, wherein the mixed-color wavelength range may each have a continuous spectrum or a plurality of discrete spectral components with different wavelengths.
  • the electromagnetic primary radiation can have a wavelength range from an ultraviolet to green wavelength range
  • the secondary electromagnetic radiation can have a wavelength range from a blue to infrared wavelength range.
  • the electromagnetic primary radiation and the secondary radiation superimposed on a white-colored
  • the electromagnetic primary radiation can arouse a blue-colored luminous impression and the electromagnetic secondary radiation a
  • Wavelength range and / or spectral components in the green and red wavelength range can arise.
  • the optoelectronic component has, according to a further embodiment, a total emission, which consists of electromagnetic primary radiation and
  • the total emission of the optoelectronic component is white light.
  • the total emission can be perceived as white light by an external observer during operation of the optoelectronic component.
  • the electromagnetic secondary radiation may consist of a first
  • Electromagnetic secondary radiation emitted from the second phosphor put together.
  • Secondary electromagnetic radiation may have a wavelength selected from the range 490 nm to 575 nm, preferably 540 nm.
  • 530 nm is selected.
  • the first phosphor thus emits in the yellow or green spectral range of the electromagnetic radiation and the second phosphor in the orange or red spectral range of the electromagnetic radiation.
  • the conversion material has an absorption spectrum and an emission spectrum, wherein the absorption spectrum and the emission spectrum are advantageously at least partially not congruent.
  • the absorption spectrum may at least partially comprise the spectrum of the electromagnetic primary radiation and the emission spectrum at least partially the spectrum of the electromagnetic secondary radiation. It is therefore due to the conversion material
  • the conversion material further comprises at least one dye.
  • the first and second phosphors can be applied in liquid form.
  • the first and second phosphors may be mixed with a matrix material, which may also be in a liquid phase, and co-applied.
  • the liquid matrix material and the first and second phosphors for example, on the
  • Layer sequence are applied to the active area.
  • An electrode can also be applied to the layer sequence and first and second phosphors, which are optionally mixed with a matrix material, are applied in layers to this electrode.
  • first and second phosphors or the mixture can be cured and / or fixed and the
  • the second phosphor for example of the type M2Si5Ng, where M is a combination of
  • Starting substances can be selected from a group comprising alkaline earth metals and their compounds, silicon and its compounds, and europium and its compounds. This may be alkaline earth metal compounds Alloys, hydrides, silicides, nitrides, halides, oxides and mixtures of these compounds. Silicon compounds can be made of silicon nitrides,
  • Alkaline earth silicides Siliciumdiimiden, silicon hydrides or mixtures of these compounds can be selected.
  • silicon nitrides and silicon metal are used which are stable, readily available and inexpensive.
  • Compounds of europium may consist of europium oxides, europium nitrides,
  • Europium halides europium hydrides or mixtures of these compounds.
  • europium oxide is used which is stable, readily available and inexpensive.
  • Crystallinity and in support of the crystal growth of the phosphor can be used.
  • the chlorides and fluorides of the alkaline earth metals used such as SrCl 2 , SrF 2 , CaCl 2 , CaF 2 , BaCl 2 , BaF 2 , halides, such as NH 4 Cl, NH 4 F, KF, KCl, MgF 2 , and boron-containing compounds , such as H 3 BO 3 , B 2 0 3 , Li 2 B 4 0 7 , NaB0 2 , Na 2 B 4 0 7 , are used.
  • the starting substances are mixed, wherein the mixture of the starting substances is preferably carried out in a ball mill or in a tumble mixer.
  • the conditions can be chosen so that sufficient energy is introduced into the mix, resulting in a milling of the starting materials. The increased with it
  • Particle morphology and the yield of the resulting second phosphor can be influenced. The one for this
  • suitable techniques include screenings and
  • the mixture can be tempered once or several times.
  • the tempering can be carried out in a crucible made of tungsten, molybdenum or boron nitride.
  • the heat treatment takes place in a gas-tight oven in a nitrogen or
  • Nitrogen / hydrogen atmosphere can be fluid or stationary. It may also be advantageous for the quality of the second phosphor when carbon is present in finely divided form in the furnace chamber. Multiple anneals of the second phosphor can the
  • the second phosphor can be treated or it can the second phosphor substances, such as
  • the annealed phosphor can still be ground.
  • For the grinding of the second phosphor can usual
  • Tools such as a mortar mill, a
  • Fluidized bed mill or a ball mill can be used. at The grind should be kept as low as possible, the proportion of generated splitter grain, since this is the optical properties of the second phosphor
  • the second phosphor can be additionally washed.
  • the phosphor in water or in
  • aqueous acids such as hydrochloric acid, nitric acid, hydrofluoric acid, sulfuric acid, organic acids or a mixture of these.
  • aqueous acids such as hydrochloric acid, nitric acid, hydrofluoric acid, sulfuric acid, organic acids or a mixture of these.
  • This treatment may, possibly in
  • the first phosphor having the composition A 3 B 5 O 1 2 may be prepared as follows.
  • Rare earth metal oxides rare earth metal hydroxides and
  • Rare earth carbonates rare earth nitrates
  • Rare earth metal halides and combinations thereof.
  • oxides As starting materials of component B, oxides,
  • Hydroxides or salts of aluminum such as theirs Carbonates, nitrates, halides or combinations of said compounds can be selected.
  • Fluxes such as, but not limited to, fluorides such as NH 4 HF 2 , LiF, NaF, KF, RbF, CsF, BaF 2 , AlF 3 , CeF 3 , YF 3 , LuF 3 , GdF 3 , and similar compounds, or boric acid, and their salts. Furthermore, any combination of two or more of the above-mentioned fluxes come into question.
  • the starting substances and optionally the melting and fluxing agents are homogenized, for example in a mortar mill, a ball mill, a turbulent mixer, a plowshare mixer or by other suitable methods.
  • the homogenised mixture is then subjected to reduction in an oven, for example a tube furnace, a chamber furnace or a push-through oven, for several hours
  • Atmosphere annealed for several hours.
  • the material to be annealed is then ground, for example in a mortar mill, ball mill, fluidized bed mill or other types of mill.
  • the milled powder is then subjected to further fractionation and classification steps, such as sieving, flotation or sedimentation and optionally washed.
  • the reaction product comprises the first phosphor.
  • first and second phosphors, and optionally a matrix material can also be vapor-deposited and then cured by crosslinking reactions.
  • the particles of the first and / or second phosphor can at least partially the electromagnetic
  • the scattering properties of the conversion ⁇ material can lead to improved radiation extraction from the device.
  • the scattering effect can ⁇ example, also lead to an increase in the probability of absorption of primary radiation in the conversion material, thus a smaller layer thickness of the layer containing the conversion material, may be required.
  • the conversion material may also be applied to a substrate comprising, for example, glass or a transparent plastic, wherein on the
  • the optoelectronic component may have an encapsulation enclosing the layer sequence with the active region, wherein the
  • Conversion material in the beam path of the electromagnetic primary radiation can be arranged inside or outside the encapsulation.
  • the encapsulation can each as
  • Thin-layer encapsulation be executed.
  • the conversion material is in direct contact with the radiation source. So can the
  • the conversion material is spaced from the radiation source.
  • the conversion of the electromagnetic primary radiation into the electromagnetic secondary radiation takes place at a large distance from the radiation source, for example in one
  • Distance converter material and radiation source of greater than or equal to 200 ym, preferably greater than or equal to 750 ym, more preferably greater than or equal to 900 ym (so-called "remote phosphor conversion").
  • the conversion material may in particular be embedded as a volume encapsulation in a matrix material.
  • Figure 1 is a schematic side view of a
  • Figure 2 shows a phosphor spectrum at different
  • Figure 3 shows an aging of a second phosphor and a
  • FIG. 1 shows a schematic side view of a
  • the optoelectronic component on the embodiment of a light emitting diode (LED).
  • the optoelectronic component has a layer sequence 1 with an active region (not explicitly shown), a first electrical connection 2, a second electrical connection 3, a bonding wire 4, a potting 5, a housing wall 7, a housing 8, a recess 9, a first phosphor 6-1, a second phosphor 6-2 and a matrix material 10.
  • the layer sequence 1 can be arranged with an active region on a carrier (not shown here).
  • a carrier may be a printed
  • PCB Circuit board
  • a ceramic substrate a circuit board or an aluminum plate act.
  • the layer sequence 1 in so-called thin-film chips is possible.
  • the active area is electromagnetic for emission
  • Nitride compound semiconductor material emits in particular electromagnetic primary radiation in the blue and / or ultraviolet spectral range.
  • the first phosphor 6-1 and second phosphor 6-2 which are present in particle form as shown here, are embedded in a matrix material 10 in the beam path of the electromagnetic primary radiation.
  • the matrix material 10 is for example polymer or ceramic material.
  • the first phosphor 6-1 and / or the second phosphor 6-2 arranged directly in direct mechanical and / or electrical contact on the layer sequence 1 with an active region.
  • further layers and materials such as, for example, the encapsulation, may be arranged between the first phosphor 6-1 and / or second phosphor 6-2 and the layer sequence 1 (not shown here).
  • the first phosphor 6-1 and second 6-2 may be arranged between the first phosphor 6-1 and / or second phosphor 6-2 and the layer sequence 1 (not shown here).
  • Phosphor 6-2 be arranged directly or indirectly on the housing wall 7 of a housing 8 (not shown here).
  • first phosphor 6-1 and the second phosphor 6-2 are embedded in a potting compound (not shown here), and together with the
  • Matrix material 10 are formed as encapsulation 5.
  • the electromagnetic primary radiation is emitted in the blue spectral range of the electromagnetic radiation, wherein at least a portion of this electromagnetic see primary radiation from the first phosphor 6-1 and the second phosphor 6-2 to a first secondary electromagnetic radiation in the green and a second secondary electromagnetic radiation in the red Spectral range of electromagnetic radiation is converted.
  • the total radiation emerging from the opto-electronic component is a superimposition of blue-emitting primary radiation and red and green-emitting secondary radiation, wherein the radiation for the external observer visible total emission is white light.
  • FIG. 2 shows the intensity in a.U. a first
  • Electromagnetic primary radiation of 465 nm excited the figure 2 shows the total emission of the optoelectronic component of electromagnetic primary radiation and electromagnetic secondary radiation.
  • Emission band with a maximum wavelength of 460 ⁇ 5 nm shows the emission of primary electromagnetic radiation
  • the second emission band with a maximum wavelength of about 600 nm from a superposition of the emission band of the first phosphor with a maximum wavelength of about 555 nm and the emission band of the second phosphor with a maximum wavelength of about 630 nm results.
  • Phosphor results for the optoelectronic component, a long-term stability relative to relative humidity and improved thermal stability compared to conventional systems, for example, instead of the second phosphor according to the invention a phosphor of the type (Sr, Ca) i_ z AlSiN 3 : Eu z with 0, 003 ⁇ z ⁇ 0, 007.
  • the Sr content is 69.51 mol% and the Ca content is 29.79 mol% in a phosphor of the type (Sr, Ca) AlSi 3 i_ z: Eu z.
  • Phosphor be excited efficiently due to the location of its absorption maximum in the wavelength range of 450 to 470 nm.
  • AI embodiment of a second phosphor having the composition (Sr 0 , 36 Baao, 5 Cao, iEuo, o4) 2SisN 8
  • Aging D was calculated from the ratio of the radiation energy of AI and VI after 0 hours and the
  • AI or VI Radiation energy of AI or VI determined after 168 h.
  • a so-called Pressure Cooker Test (PCT) was carried out over a period of 168 hours at 121 ° C, a pressure of about 2 atm, a relative humidity of 100% and a current of 20 mA.
  • PCT Pressure Cooker Test
  • Comparative Example VI shows a larger aging compared to the embodiment AI.
  • the embodiment AI is more stable in the long term than VI against high temperature, high water vapor pressure and / or high relative humidity.
  • the stability of AI is intrinsic, meaning that AI is of is stable out and not by subsequent

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Luminescent Compositions (AREA)

Abstract

L'invention concerne un composant opto-électronique, comprenant une succession de couches (1) présentant une zone active qui émet un rayonnement primaire électromagnétique; un matériau de conversion, qui est disposé dans la trajectoire du rayonnement primaire électromagnétique, et qui convertit, au moins partiellement, le rayonnement primaire électromagnétique, en un rayonnement secondaire électromagnétique. Le matériau de conversion comprend une première substance luminescente (6- 1) ayant la composition générale A3B5O12 et une seconde substance luminescente (6-2) ayant la composition générale M2Si5N8, dans laquelle A comprend un des éléments Y, Lu, Gd et/ou Ce ou des combinaisons de Y, Lu, Gd et/ou Ce, B étant A1, et, dans la seconde substance luminescente (6-2) Ca étant contenu, en tant que partie du constituant M, à raison d'une fraction de 2,5 mol-% à 25 mol-%, le constituant M de la seconde substance luminescente (6-2) contenant Ba, à raison d'une fraction supérieure ou égale à 40 mol-%, le constituant M de la seconde substance luminescente (6-2) contenant Eu, à raison d'une fraction de 0,5 mol-% à 10 mol-%, et le constituant M de la seconde substance luminescente (6-2) contenant Sr.
PCT/EP2013/054176 2012-03-07 2013-03-01 Composant opto-électronique WO2013131824A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012101920A DE102012101920A1 (de) 2012-03-07 2012-03-07 Optoelektronisches Bauelement
DE102012101920.7 2012-03-07

Publications (1)

Publication Number Publication Date
WO2013131824A1 true WO2013131824A1 (fr) 2013-09-12

Family

ID=47780067

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2013/054176 WO2013131824A1 (fr) 2012-03-07 2013-03-01 Composant opto-électronique

Country Status (2)

Country Link
DE (1) DE102012101920A1 (fr)
WO (1) WO2013131824A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013113382A1 (de) 2013-12-03 2015-06-03 Osram Gmbh Leuchtstoffmischung, Licht emittierendes Halbleiterbauelement mit einer Leuchtstoffmischung und Straßenlaterne mit einer Leuchtstoffmischung
DE102014108004A1 (de) * 2014-06-06 2015-12-17 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE102019109909A1 (de) * 2019-04-15 2020-10-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement mit einer Lumineszenzkonversionsschicht

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030020101A1 (en) * 1999-11-30 2003-01-30 Georg Bogner Light source using a yellow-to-red-emitting phosphor
WO2006095285A1 (fr) * 2005-03-09 2006-09-14 Philips Intellectual Property & Standards Gmbh Systeme d'eclairage comprenant une source de rayonnement et un materiau fluorescent
EP1734096A1 (fr) * 2004-03-22 2006-12-20 Fujikura Ltd. Dispositif d'emission de lumiere et dispositif d'eclairage
DE102009010705A1 (de) * 2009-02-27 2010-09-02 Merck Patent Gmbh Co-dotierte 2-5-8 Nitride
DE102009037732A1 (de) * 2009-08-17 2011-02-24 Osram Gesellschaft mit beschränkter Haftung Konversions-LED mit hoher Effizienz
WO2013053601A2 (fr) * 2011-10-12 2013-04-18 Osram Opto Semiconductors Gmbh Composant optoélectronique et substances luminescentes

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10360546A1 (de) * 2003-12-22 2005-07-14 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Leuchtstoff und Lichtquelle mit derartigem Leuchtstoff
US7267787B2 (en) * 2004-08-04 2007-09-11 Intematix Corporation Phosphor systems for a white light emitting diode (LED)
DE202005011701U1 (de) * 2005-07-26 2006-09-28 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Leuchtstoff für Lumineszenzkonversions-LED
DE102008058295A1 (de) * 2008-11-20 2010-05-27 Osram Gesellschaft mit beschränkter Haftung Rot emittierender Leuchtstoff aus der Klasse der Nitridosilikate und Lichtquelle mit derartigem Leuchtstoff sowie Verfahren zur Herstellung des Leuchtstoffs
DE102009055185A1 (de) * 2009-12-22 2011-06-30 Osram Gesellschaft mit beschränkter Haftung, 81543 Leuchtstoff und Lichtquelle mit derartigen Leuchtstoff

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030020101A1 (en) * 1999-11-30 2003-01-30 Georg Bogner Light source using a yellow-to-red-emitting phosphor
EP1734096A1 (fr) * 2004-03-22 2006-12-20 Fujikura Ltd. Dispositif d'emission de lumiere et dispositif d'eclairage
WO2006095285A1 (fr) * 2005-03-09 2006-09-14 Philips Intellectual Property & Standards Gmbh Systeme d'eclairage comprenant une source de rayonnement et un materiau fluorescent
DE102009010705A1 (de) * 2009-02-27 2010-09-02 Merck Patent Gmbh Co-dotierte 2-5-8 Nitride
DE102009037732A1 (de) * 2009-08-17 2011-02-24 Osram Gesellschaft mit beschränkter Haftung Konversions-LED mit hoher Effizienz
WO2013053601A2 (fr) * 2011-10-12 2013-04-18 Osram Opto Semiconductors Gmbh Composant optoélectronique et substances luminescentes

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
U J L ET AL: "Cerium doped garnet phosphors for application in white GaN-based LEDs", LUMINESCENCE AND LUMINESCENT MATERIALS. SYMPOSIUM, MATERIALS RESEARCH SOCIETY, US, vol. 667, 17 April 2001 (2001-04-17), pages G5.1.1 - G5.1.6, XP008118036, ISBN: 978-1-55899-603-8 *
WU J L ET AL: "SPECTRAL PROPERTIES OF VARIOUS CERIUM DOPED GARNET PHOSPHORS FOR APPLICATION IN WHITE GAN-BASED LEDS", MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS; [MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS], MATERIALS RESEARCH SOCIETY, PITTSBURG, PA; US, vol. 658, 1 January 2001 (2001-01-01), pages GG11.8.1 - GG11.8.6, XP009036120, ISBN: 978-1-55899-828-5 *

Also Published As

Publication number Publication date
DE102012101920A1 (de) 2013-09-12

Similar Documents

Publication Publication Date Title
WO2013053601A2 (fr) Composant optoélectronique et substances luminescentes
DE112006003161B4 (de) Ladungskompensierte Nitridleuchtstoffe und deren Verwendung
DE112006001722B4 (de) Leuchtstoff und Verfahren zu dessen Herstellung sowie Verwendung des Leuchtstoffs
DE69702929T2 (de) Licht-emittierende vorrichtung und anzeigevorrichtung
EP1116418B1 (fr) Substance fluorescente pour sources lumineuses et source lumineuse correspondante
DE112006000291B4 (de) Leuchtstoff, sein Herstellungsverfahren und dessen Verwendung
DE102014107972B4 (de) Leuchtvorrichtung mit einem ersten Leuchtstoff und Filterpartikeln
DE60305958T2 (de) Lichtemittierendes bauelement mit einem eu(ii)-aktivierten leuchtstoff
WO2005031797A2 (fr) Diode electroluminescente a emission blanche presentant une temperature de couleur definie
WO2011085897A1 (fr) Système de diode électroluminescente, dispositif de rétroéclairage et dispositif d'affichage
DE112011100522T5 (de) Fluoreszierende Substanz, lichtemittierende Vorrichtung, Oberflächenlichtquellenvorrichtung, Anzeigevorrichtung und Beleuchtungsvorrichtung
WO2016180930A1 (fr) Composant optoélectronique émetteur de rayonnement
DE102013105304A1 (de) Verfahren zur Herstellung eines pulverförmigen Precursormaterials, pulverförmiges Precursormaterial und seine Verwendung
WO2005030905A1 (fr) Luminophore hautement efficace
WO2013131824A1 (fr) Composant opto-électronique
DE102019121348A1 (de) Leuchtstoff, verfahren zur herstellung eines leuchtstoffs und optoelektronisches bauelement
DE102017123265B4 (de) Leuchtstoff und Konversions-LED
WO2018104389A1 (fr) Composant optoélectronique
WO2014184003A1 (fr) Procédé de fabrication d'un substance luminescente, substance luminescente et composant optoélectronique
DE102017121339B4 (de) Leuchtstoff und Konversions-LED
DE102021203336A1 (de) Leuchtstoff, verfahren zur herstellung eines leuchtstoffs und strahlungsemittierendes bauelement
WO2010136411A1 (fr) Composé chloroaluminate, son procédé de fabrication, dispositif émetteur de rayonnement comprenant le composé chloroaluminate et procédé de fabrication du dispositif émetteur de rayonnement
EP2491095B1 (fr) Matériau luminescent et source de lumière comportant un tel matériau luminescent
DE102005037455A1 (de) Weißlicht-Leuchtdiode
DE102017123269A1 (de) Leuchtstoff und Konversions-LED

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13707167

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13707167

Country of ref document: EP

Kind code of ref document: A1