WO2013124089A1 - Procédé de fabrication d'un composant à semi-conducteur optoélectronique et composant à semi-conducteur optoélectronique - Google Patents

Procédé de fabrication d'un composant à semi-conducteur optoélectronique et composant à semi-conducteur optoélectronique Download PDF

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Publication number
WO2013124089A1
WO2013124089A1 PCT/EP2013/050586 EP2013050586W WO2013124089A1 WO 2013124089 A1 WO2013124089 A1 WO 2013124089A1 EP 2013050586 W EP2013050586 W EP 2013050586W WO 2013124089 A1 WO2013124089 A1 WO 2013124089A1
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WO
WIPO (PCT)
Prior art keywords
conversion element
radiation
chip
main
optoelectronic semiconductor
Prior art date
Application number
PCT/EP2013/050586
Other languages
German (de)
English (en)
Inventor
Ralph Wagner
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2013124089A1 publication Critical patent/WO2013124089A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Definitions

  • An optoelectronic semiconductor component is specified.
  • a method for producing an optoelectronic semiconductor device is specified.
  • An object to be solved is to provide an optoelectronic semiconductor device in which a on a
  • Radiation main side generated by means of a conversion element color location is efficiently and selectively adjustable. This object is achieved, inter alia, by a method and by an optoelectronic semiconductor component with the
  • Optoelectronic semiconductor device one or more
  • the at least one light-emitting diode chip comprises a main radiation side.
  • the at least one light-emitting diode chip comprises a main radiation side.
  • the LED chip is to
  • the semiconductor component comprises one or more conversion elements.
  • the conversion element is a conversion of a
  • the LED chip emitted during operation set up primary radiation in a different secondary radiation.
  • the secondary radiation preferably has a greater wavelength than the primary radiation.
  • the conversion element can have one or more different phosphors.
  • the conversion element is at least or exclusively above the main radiation side of the light-emitting diode chip
  • the conversion element can be applied directly to the main radiation side. It can do that
  • Conversion element touch the main radiation side.
  • a thickness and / or a material composition of the conversion element is specifically varied over the main radiation side.
  • the optoelectronic semiconductor component comprises a light-emitting diode chip with a main radiation side and a conversion element.
  • the conversion element is converted to from
  • the LED chip emitted primary radiation in a different secondary radiation set up.
  • a thickness and / or a material composition of the conversion element is varied over the main radiation side.
  • the light-emitting diode chip has a plurality of chip segments which can be controlled independently of one another.
  • LED chip can be a so-called multi-pixel chip.
  • the chip segments can be monolithically integrated.
  • a multi-pixel chip means that the individual chip segments have an identical semiconductor layer sequence
  • individual chip segments are produced, for example, by attaching a single comparatively large LED chip to a carrier and then dividing it into the chip segments, for example by means of etching.
  • the chip segments are no longer moved relative to the carrier on which the LED chip has been mounted. Likewise, the dividing into the chip segments on a growth substrate for the
  • multi-pixel chip thus preferably means that the individual chip segments of the light-emitting diode chip are no longer moved relative to each other after the epitaxial growth.
  • a distance between adjacent chip segments may be between 1 ym and 50 ym or between
  • Monolithically integrated can mean that the
  • An active zone of the Light-emitting diode chips which may be aligned parallel to the main radiation side, preferably does not extend continuously over the individual chip segments.
  • the conversion element is subdivided into subelements.
  • the sub-elements are preferably arranged laterally next to one another. Lateral side by side means in particular along a direction parallel to the main radiation side. Adjacent sub-elements of the conversion element may touch or may be spaced apart.
  • At least two chip segments with partial elements of the semiconductor component at least two chip segments with partial elements of the semiconductor component
  • the sub-elements differ in their thickness and / or their material composition from each other. By means of such chip segments and sub-elements, it is possible to produce a dense package of individually controllable pixels which emit different colors during operation.
  • multi-pixel chips can be produced by using a photo technique to emit differently colored semiconductor layer sequences at different Locating the LED chip are grown.
  • This is associated with a very large effort.
  • An individual color setting is with such
  • Ceramic, for each of the pixels is due to a production-related bandwidth of the converter
  • the light-emitting diode chip forms a single electrical one
  • LED chip then not in chip segments, which are individually controlled, divided.
  • the LED chip is not in chip segments, which are individually controlled, divided.
  • Radiation main page for example, at least 0.75 mm x 0.75 mm or at least 1 mm x 1 mm or from
  • the main radiation side has, for example, seen in plan view, for example, a square or rectangular basic shape.
  • Conversion element or at least one of the sub-elements of the conversion element in the form of a symbol, pictogram or at least one character font structured seen in plan view of the main radiation side. It is possible that the conversion element or the relevant subelement is a positive or a negative of the character to be displayed. This makes it possible to emit a different color from the semiconductor component in a region adjacent to the conversion element or the subelement than in regions of the main radiation side which are covered by the conversion element or by the subelement. Thus, a character with the LED chip can be easily represented.
  • the conversion element covers at most 40% or at most 30% or at most 20% of the main radiation side. In other words, then a major part of the main radiation side is free of the conversion element.
  • the conversion element covers at least 90% or
  • the main radiation side is in
  • connection areas such as bond pads covered by the conversion element.
  • Conversion element at least two of the sub-elements.
  • One or more first sub-elements form a positive of the character to be displayed.
  • Subelements then form a negative of the character to be displayed.
  • the first and the second sub-elements are preferably arranged laterally next to one another and can touch or can be separated from one another.
  • Conversion element a plurality of laterally juxtaposed Sub-elements that differ in their material composition from each other. At least part of the
  • Partial elements is adapted to generate a radiation of a first wavelength and another part of the
  • Sub-elements is adapted to generate a different radiation.
  • a part of the sub-elements serves to generate white light together with the primary radiation emitted by the light-emitting diode chip.
  • the other part of the sub-elements may be configured to generate, for example, red or red-white light.
  • this includes
  • the optics may be a lens or a lens system.
  • An imaging optic by means of reflection can also be realized.
  • the optics is configured to project the chip segments and / or the subelements of the conversion element and / or the character to be displayed, to which the conversion element or the subelements are shaped, onto a surface to be illuminated.
  • the surface to be illuminated may be an area outside a portable device, such as a mobile phone, in which the semiconductor device is incorporated.
  • this includes
  • Conversion element several layers stacked one above the other. The layers follow in a direction perpendicular to the
  • the neighboring layers can touch each other.
  • a number of the stacked layers vary over the
  • the individual layers each have a thickness of between 1 ⁇ m and 20 ⁇ m or between 1 ⁇ m and 5 ⁇ m.
  • the maximum number of layers applied over the main radiation side is preferably at least two or at least three or at least ten.
  • the conversion element has at most 50 layers or at most 25 layers.
  • all the layers, within the framework of the manufacturing tolerances, have the same
  • the layers each have the same phosphors in the same concentration or in the same concentration ratio.
  • the same color locale may mean that a local color location deviates from a mean of the color locus by at most 0.02 units or at most 0.01 units in the CIE standard color chart.
  • Conversion element designed as an indicator.
  • the conversion element is then an indicator for ⁇
  • the conversion element and / or the semiconductor device is then set up, depending on one of the variables mentioned radiation of a certain
  • the semiconductor device emits blue light at low temperatures and red or redder light at higher temperatures.
  • the conversion element can therefore
  • Thermochrommaschine and / or Hydrochrommaschine include.
  • a method for producing an optoelectronic semiconductor device is specified.
  • the method produces a semiconductor device as specified in connection with one or more of the above embodiments.
  • Features of the method are therefore also disclosed for the semiconductor device and vice versa.
  • the process comprises at least or only the following steps, preferably in the order given:
  • the conversion element is applied in over the main radiation side of varying thickness and / or material composition.
  • the application of at least one part of the conversion element comprises at least the following steps, for example in the order indicated:
  • Conversion element wherein the conversion element is mounted on a carrier main side of an intermediate carrier
  • Release layer with a pulsed laser radiation which radiates through the intermediate carrier.
  • the conversion element is removed in sections from the intermediate carrier by the pulsed laser radiation.
  • the absorber component and / or the release layer are partly or completely converted into a gas phase. Due to the volume expansion associated with the transition from
  • the detachment of the conversion element from the intermediate carrier is preferably not or not substantially gravitationally driven.
  • a plurality of layers can be targeted and locally on the main radiation side position. It may be similar or different materials, in terms of their
  • At least a part of the conversion element is successively in a plurality of successive layers on the
  • a color locus of the radiation emitted by the light-emitting diode chip together with the part of the conversion element already mounted on the light-emitting diode chip is determined.
  • further layers of the conversion element are applied to the light-emitting diode chip.
  • the color locus can be measured locally, so that different parts of the main radiation side can be assigned a different number of layers.
  • a local color location measurement can also take place via a wafer with a multiplicity of light-emitting diode chips. About the locally different number of layers can then be the color of the emitted from the LED chips
  • Radiation can be regulated across the entire wafer. Such can occur across the wafer
  • At least part of the conversion element is provided with a
  • Inkjet printing is generated and that then a correction of the locally emitted color locations by means of
  • FIGS. 1 to 5 and 7 to 9 are schematic illustrations of FIG.
  • Figure 6 is a schematic representation of a method for
  • FIG. 1A is a schematic sectional view of an exemplary embodiment of an optoelectronic device
  • the semiconductor device 1 shown.
  • the semiconductor device 1 has a light-emitting diode chip 2 and a conversion element 3.
  • the conversion element 3 is directly on a
  • the LED chip 2 comprises a chip substrate 27. On the chip substrate 27 are a plurality of chip segments 23a, 23b.
  • the chip segments 23a, 23b are identically composed, within the manufacturing tolerances, and originate from the same grown epitaxial layer sequence. A distance between the chip segments 23a, 23b is a few ym.
  • the individual chip segments 23a, 23b emit during operation of the
  • Semiconductor device 1 a primary radiation of approximately the same wavelength, preferably in each case blue light. From the chip substrate 27 forth is an active zone 25,
  • the LED chip 2 is constructed, as indicated in the document US 2011/0101390 AI, the disclosure of which is incorporated by reference.
  • the conversion element 3 is divided into a plurality of sub-elements 32a, 32b.
  • the sub-elements 32a, 32b are arranged separated from each other according to Figure 1A. Notwithstanding Figure 1A, the sub-elements 32a, 32b may touch and extend over side surfaces of the chip segments 23a, 23b.
  • FIGS. 1B to 1G show schematic plan views of the main radiation sides 20 of exemplary embodiments of the semiconductor components 1.
  • emitting partial elements B are omitted if the LED chip 2 already emits blue light of the desired color during operation.
  • the semiconductor component 1 has 3 ⁇ 3 subelements.
  • the sub-elements R, B, G are arranged in strips.
  • the sub-elements R, B, G are mixed in color on the
  • the semiconductor components 1 each have a larger number of the subelements R, B, G. According to FIG. 1D, the subelements R, B, G are sorted by color along
  • Basic color emitting sub-elements for example, several in different shades of green emitting sub-elements, be present.
  • a light-emitting diode chip 2 with a single, coherent semiconductor layer sequence may also be used.
  • Sub-elements P preferably have the same
  • the sub-elements P differ only in their thickness. As a result, it can be achieved that white light of the same color locus is emitted over the entire main radiation side 20.
  • Radiation main page 20 a plurality of sub-elements P are mounted, which emit white light, and a plurality of sub-elements R, which generate white light with a higher proportion of red.
  • the individual sub-elements R, P can be separated electrically
  • controllable chip segments or on a single, large main radiation side of a non-segmented LED chip.
  • effects especially in a center of the picture or in an upper area on face height, effects such as a livelier and / or fresher facial color when photographing can be achieved.
  • headlights in the automotive sector can be realized in this way. For example, a subregion of the main radiation side then emits a lower proportion of blue and is less dazzling. Also special lights as technically easy to implement customization, in particular
  • Sales markets or as a value feature for different model series this can be easily produced.
  • a manufacturer-specific color temperature distribution in the light image about a brand recognition is possible.
  • semiconductor devices 1 which are constructed as a multi-pixel ⁇ semiconductor components and / or as a high-voltage semiconductor devices, in lamps with
  • changeable color temperature can be installed. For example, then some separately controllable pixels, in addition to a white light-generating converter, a red or yellow or orange amplified emitting converter.
  • the semiconductor components 1 can be provided with a controllable resistance, with which the color temperature and / or a total brightness can be adjusted. This is also a monochrome multi-pixel chips color temperature adjustment possible by a user. Likewise in lamp production, a color temperature is individually adaptable.
  • the main radiation side 20 is not completely covered by the conversion element 3.
  • Chip segments 23a, 23b are separated from one another by trenches which extend through the active zone 25.
  • FIG. 3 illustrates that over the
  • Thicknesses T35 of the layers 35 are in the range less ym.
  • a total thickness T3 of the conversion element 3 results from the sum of
  • Thicknesses T35 of the layers 35 extend essentially completely over the main radiation side 20.
  • the layers 35 which are stacked one above the other, are subdivided along a lateral direction.
  • the layers 35 in this case do not substantially overlap laterally.
  • the semiconductor chip 2 may be a multi-pixel chip, as in connection with FIGS. 1A or 2
  • the LED chip 2 forms a single electrically controllable unit and is unsegmented. Also in the embodiments according to the figures 1B to IG and according to the figures 3 and 5 to 9 it can each about a multi-pixel chip or one
  • the LED chip 2 is applied to a carrier substrate 8, which may comprise not shown conductor tracks. Deviating from the representation can on the carrier substrate 8, which may comprise not shown conductor tracks. Deviating from the representation can on the carrier substrate 8, which may comprise not shown conductor tracks. Deviating from the representation can on the carrier substrate 8, which may comprise not shown conductor tracks. Deviating from the representation can on the carrier substrate 8, which may comprise not shown conductor tracks. Deviating from the representation can on the carrier substrate 8, which may comprise not shown conductor tracks. Deviating from the representation can on the
  • Support substrate 8 may also be mounted more of the LED chips 2.
  • the layers 35 have a lateral overlap. As a result, a complete coverage of the main radiation side 20 can be achieved.
  • FIG. 6 shows an exemplary embodiment of a method for producing the semiconductor component 1 in schematic form
  • the release layer 5 is completely or partially evaporated, so that a gaseous release material 56 is formed.
  • a gaseous release material 56 is formed.
  • Conversion element 3 detached from an originally contiguous layer 3 'of a raw material and to the
  • Radiation main page 20 is for example between including 5 ym and 50 ym.
  • a gap between the layer 3 'and the main radiation side 20 may be evacuated or a gas pressure may be reduced.
  • influences on the parts of the conversion element 3 separated out of the layer 3 'due to air resistance can be reduced or avoided.
  • a lateral extent of the laser radiation 6 and thus of the parts of the conversion element 3 is, for example, between 5 ⁇ m and 200 ⁇ m, preferably between
  • the lateral extent of the laser radiation 6 can also be adapted to a width of the chip segments, cf. for example FIGS. 1A and 4, and correspond to the lateral dimensions of the semiconductor chip 2, for example with a tolerance of at most 20% or at most 10%.
  • release material 56 is also possible for the release material 56 not to be applied in the separate release layer 5, but to be added to the layer 3 '.
  • the release material 56 is preferably permeable to the radiation generated later by the semiconductor chip 2.
  • Conversion element 3 are applied to the main radiation side 20.
  • the resulting semiconductor device 1 is shown in FIG. 6C.
  • the raw material for the conversion element 3 such as a silicone
  • the raw material for the conversion element 3 is only incompletely crosslinked and / or incompletely cured in the layer 3 '.
  • a hardness of the raw material on the carrier 4 can be increased, for example, by exposure or heat.
  • LED chip 2 is applied, is a mechanically reliable connection of the conversion element 3 with the LED chip 2 and the layers 35 with each other
  • FIGS. 7 and 8 show exemplary embodiments of the invention
  • Radiation main face 20 is only partially of the
  • Subelements 32a, 32b are structured as a positive to the symbol to be displayed and the subelement 32b as a negative.
  • the semiconductor component 1 additionally has an imaging optical system 9.
  • an optic 9 may also be present in all other embodiments. With the optics 9 is about the symbol, cf. Figures 8B and 8C representable.
  • thicknesses of the partial elements 32a, 32b are deliberately set differently from one another. It can be the
  • Sub-elements 32a, 32b have a same material composition.
  • such a semiconductor device 1 can be realized as shown in connection with FIG.
  • Sub-elements 32a, 32b an indicator function, such as for
  • LED chip 2 is then preferably encapsulated.

Abstract

Dans au moins un mode de réalisation, le composant à semi-conducteur optoélectronique (1) comprend une puce de diode électroluminescente (2) comportant une face d'émission principale (20) ainsi qu'un élément de conversion (3). L'élément de conversion (3) est adapté pour convertir le rayonnement primaire émis par la puce de diode électroluminescente (2) en un rayonnement secondaire différent du rayonnement primaire. De manière ciblée, on fait varier l'épaisseur et/ou la composition du matériau de l'élément de conversion (3) sur la longueur de la face d'émission principale (20).
PCT/EP2013/050586 2012-02-21 2013-01-14 Procédé de fabrication d'un composant à semi-conducteur optoélectronique et composant à semi-conducteur optoélectronique WO2013124089A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012101393.4 2012-02-21
DE102012101393A DE102012101393A1 (de) 2012-02-21 2012-02-21 Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil

Publications (1)

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WO2013124089A1 true WO2013124089A1 (fr) 2013-08-29

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WO (1) WO2013124089A1 (fr)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
FR3055944A1 (fr) * 2016-09-15 2018-03-16 Valeo Vision Conversion lumineuse pour une source lumineuse de haute resolution

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DE102015103055A1 (de) * 2014-12-04 2016-06-09 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
GB201704203D0 (en) * 2017-03-16 2017-05-03 Pixquanta Ltd An electromagnetic radiation detection device
DE102021120136A1 (de) * 2021-08-03 2023-02-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines optoelektronischen bauelements

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Publication number Priority date Publication date Assignee Title
FR3055944A1 (fr) * 2016-09-15 2018-03-16 Valeo Vision Conversion lumineuse pour une source lumineuse de haute resolution

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