WO2013116107A1 - Dispositifs thermoélectriques utilisant une liaison frittée - Google Patents

Dispositifs thermoélectriques utilisant une liaison frittée Download PDF

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Publication number
WO2013116107A1
WO2013116107A1 PCT/US2013/023203 US2013023203W WO2013116107A1 WO 2013116107 A1 WO2013116107 A1 WO 2013116107A1 US 2013023203 W US2013023203 W US 2013023203W WO 2013116107 A1 WO2013116107 A1 WO 2013116107A1
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WO
WIPO (PCT)
Prior art keywords
substrate
silver
bonding material
sintered
heat
Prior art date
Application number
PCT/US2013/023203
Other languages
English (en)
Inventor
Julian KAHLER
Thomas Kruspe
Sebastian Jung
Andrej STRANZ
Andreas Waag
Erwin Peiner
Original Assignee
Baker Hughes Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/363,997 external-priority patent/US20120291454A1/en
Application filed by Baker Hughes Incorporated filed Critical Baker Hughes Incorporated
Priority to EP13743614.3A priority Critical patent/EP2810310A4/fr
Publication of WO2013116107A1 publication Critical patent/WO2013116107A1/fr
Priority to US18/161,339 priority patent/US20230243649A1/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0466—Alloys based on noble metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/38—Cooling arrangements using the Peltier effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds

Definitions

  • thermoelectric devices for conducting heat away from or to payloads.
  • Electronics components such as hybrid circuits are commonly used in tools made for use in high temperature environments, such as deep oil wells.
  • Current drilling and logging systems include sensors and devices that utilize electronic devices and circuits to obtain a variety of measurements to determine various parameters for the formation and to evaluate and monitor drilling and wireline operations.
  • Severe downhole environmental conditions such as temperatures up to 300°C and wellbore depths up to 10,000 meters, make high demands on the materials and electronics used for measurement-while-drilling (MWD) and wireline tools.
  • Thermoelectric coolers based on the Peltier effect, have been considered to remove heat from hybrid circuit boards used for downhole electronic circuits to maintain circuit temperatures and board temperatures about 50°C below the ambient temperature of 200°C.
  • the bonding materials such as solders (e.g., Sn95/Sb5), often used for the assembly of bismuth telluride (Bi 2 Te 3 )-based thermoelectric coolers can endure temperatures of approximately 230°C, limiting the use of commonly used thermoelectric materials.
  • CTE coefficient of thermal expansion
  • SiGe silicon- germanium
  • low temperature range of Bi 2 Te 3 can cause failures during temperature cycling often performed to improve reliability of the assembled electric circuits and devices.
  • the disclosure provides an improved apparatus and method for conducting heat that utilize silver sintered bonding materials.
  • the present disclosure provides a method of joining a
  • thermoelectric device to a member including: providing a bonding material that includes at least one of micro particles and nano particles between the thermoelectric device and the member; and sintering the bonding material to join the thermoelectric device to the member.
  • the present disclosure provides a device for transferring heat that includes a thermoelectric device configured to transfer heat; and a member attached to the thermoelectric device via a sintered bonding material, wherein the sintered bonding material includes at least one of micro and nano particles.
  • the present disclosure provides a device for conducting heat, the device including: a thermoelectric element having a first side and a second side; a first substrate; and a first silver- sintered bonding layer between the first side of the thermoelectric element and the first substrate configured to bond the thermoelectric element to the first substrate.
  • the present disclosure provides a method of providing a heat transfer device that includes: providing a thermoelectric element having a first side and a second side; attaching a first substrate to the first side of the thermoelectric element by a first silver- sintered bonding layer; and attaching a second substrate to the second side of the thermoelectric element by a second silver-sintered bonding layer.
  • FIG. 1 shows a die for attachment to a substrate using a bonding material comprising silver nano and micro particles
  • FIG. 2 shows an exemplary system for attaching a die to a substrate using a bonding material comprising nano and micro silver particles
  • FIG. 3 shows shear strength, porosity and Young's Modulus of bonding between a die attached to a silicone substrate formed according to a method described herein for bonding materials containing 0% to 100% nano silver particles by weight;
  • FIG. 4 shows an exemplary heat conducting device utilizing Peltier effect, according to one embodiment of the disclosure.
  • FIG. 5 shows a relationship between the composition of silver and diamond particles and the coefficient of thermal expansion of a sintered layer made from such a mixture.
  • FIG. 1 shows exemplary members that may be joined or attached to each other according to one embodiment of the disclosure.
  • FIG. 1 shows a member (also referred to as a "die") 110 that is to be attached to another member (also referred to as a "substrate") 120 using a bonding material 130.
  • the die 110 may be any suitable member or component, including but not limited to, an electronic component, such as an integrated circuit, transistor, a power component, and an optoelectronic component, such as a light emitting diode, a photo diode or another suitable component.
  • the substrate 120 may be made from any suitable material, including, but not limited to a ceramic material, such as aluminum oxide (AI 2 O 3 ), a metallic material and a semiconducting material (such as silicon, Bi 2 Te 3 ).
  • the bonding material 130 is a mixture of nano silver particles and micro silver particles.
  • the bonding material 130 may be in any suitable form, including but not limited to, paste, powder, etc.
  • the nano silver particles and micro silver particles may be of any suitable shape, including, but not limited to spheres and flakes.
  • the die 110 is then placed on the substrate 120.
  • a suitable pressure is applied on the die and/or substrate while heating the bonding material 130, such as by heating the substrate and/or die to a suitable temperature for a selected time period to sinter the bonding material 130.
  • the heat is then removed, thereby attaching the die 110 to the substrate 120.
  • FIG. 2 shows an exemplary apparatus 200 for attaching a die 110 to a substrate 120 using a bonding material 130 comprising a mixture of nano silver particles and micro silver particles.
  • the system 200 of FIG. 2 is shown to include a base plate 210 that may be heated to a temperature sufficient to sinter the selected bonding material and a handling device 240.
  • the sinter temperature of the bonding material is less than the operating temperature of the die and the substrate.
  • the handling device 240 in one embodiment, may include an arm 242 configured to be pressed against the base plate 210 by a suitable mechanism, such as a hydraulically-operated unit, an electrically-operated unit or a pneumatically-operated unit.
  • the system 200 is configured in a manner such that it can apply a relatively precise pressure on the arm 242 and thus also on the base plate 210.
  • device 240 may be configured to apply pressure in excess of 40 N/mm 2 .
  • the device 240 includes a vacuum suction mechanism 244 configured to pick up a
  • a exemplary process of joining the die 110 to a substrate 120 is described below.
  • a surface of one of the die and substrate 120 is coated with the bonding material 130.
  • the substrate 120 is securely placed on the base plate 210.
  • the die is picked up by arm 242 using the vacuum suction 244.
  • the arm 242 may be positioned aided by the use of an optical microscope and an x-y positioning table (not shown) over the base plate 210.
  • the arm 242 is then moved downward till the die 110 with the bonding material 130 contacts the base plate 210.
  • the movement and placement of the joining members 110 and 120 may be observed simultaneously via a suitable vision alignment system (not shown).
  • the joining members 110 and 120 are heated by heating the base plate 210 to a selected temperature.
  • a contact force "F" is applied to the die 110 and substrate 120 by the arm 242, which force may be varied during the bonding process.
  • the contact force F may be applied uniaxially or quasi- hydro statically.
  • the handling device 242 may be made of silicone and of different hardness. Other suitable materials include stainless steel,
  • temperature-stable and pressure-stable soft plastics such as polyether ether ketone (PEEK), etc.
  • PEEK polyether ether ketone
  • a material with low thermal conductivity is used in order to prevent the cooling of the joining surfaces during the joining process.
  • a soft-contact material such as silicone, compensates for uneven surfaces. This improves reproducibility and the process capability index (CpK) of the bonding process.
  • CpK process capability index
  • the use of silicone also avoids surface damage.
  • the base plate 210 is heated to a desired temperature while applying the selected pressure until the bonding material of silver nano particles and silver micro particles sinters. The temperature is then lowered and pressure on the die 110 is relieved.
  • the joining process described above may utilize pressure between 0 to 40 MPa at a temperature between 130 C and 350 C for a period of 1 minute to 120 minutes.
  • the above- noted process can provide stable die attachment for operations exceeding 350 C.
  • the sintering process described herein may be utilized for joining components, such as for attaching electronic components on substrates to form hybrid circuits, which may be achieved by modifying the die attachments mechanism of a commercially available flip-chip bonder, an apparatus used for micro assembly of dies on substrates in the electronic industry.
  • the joining process described herein allows a relatively precise pick-and-place bonding of a die (e.g.
  • thermoelectric device such as a device using Peltier effect (also referred to herein as "Peltier device”
  • the methods described herein may be used to transfer heat to a device to maintain temperature of such device at selected levels.
  • the described joining process may be used for the assembly of chip packages on substrates.
  • FIG. 3 shows graphs 300 depicting shear strength, porosity and Young's Modulus measured during a laboratory test of an electronic chip (die) bonded onto a silicon substrate according to a method described herein, using a bonding material containing (i) only silver micro particles; (ii) 50% by weight silver nano particle, and (iii) 100% silver nano particles.
  • the vertical scale 310 corresponds to shear force in N/mm 2 , porosity in percentage and Young's Modulus in GPa.
  • the horizontal axis corresponds to the percent of nano sized particles of silver by weight in the bonding material.
  • the dies used for testing were formed by bonding a die on a silicon substrate using an applied pressure of 40 N/mm 2 , the base plate temperature of 250°C for 2 minutes.
  • FIG. 3 shows that shear strength 350a for the bonding material containing 50% by weight each of the silver nano particles and silver micro particles is about 56 N/mm 2 ; shear strength 350b for a bonding material containing no silver nano particles (i.e. material containing all silver micro particles) is about 23 N/mm 2 ; and for a bonding material containing all silver nano-particles the shear strength is about 32 N/mm 2 .
  • Extrapolations shown by lines 354a and 354b indicate that the shear strength of components joined by a bonding material containing a mixture of silver nano particles and silver micro components is greater than shear strength obtained by a bonding material containing no silver nano particles. Also, shear strength for 100% nano silver nano particles is greater than shear strength for 100% silver micro particles (32 N/mm 2 versus 23 N/mm 2 for the specific case shown in FIG. 3). Shear strength is a measure used to determine suitability of a bonding material for joining electronics components to substrates. Young's modulus, which is a ratio of the stress (tensile load) applied to a material and the strain (elongation) exhibited by the material due to the applied stress, is another measure of a desired physical property of a material.
  • FIG. 3 shows that the Young's Modulus for bonding material containing 50% of silver nano particles and 50% of silver micro particles 360a (55 GPa) is greater than the Young's Modulus 360c (27 GPa) for a bonding material containing 100% silver nano particles, that, in turn is greater than the Young's Modulus 360b (20 GPa) for a bonding material containing 100% silver micro particles.
  • the attachment for sintered silver bonding material containing a mixture of silver nano particles and silver micro particles or 100% silver nano particles is stiffer than the bonding material containing 100% micro particles.
  • porosity 370a for a bonding material containing about 50%-50% mixture of nano silver particles and micro silver particles (16%) is lower than porosity 370c for 100%) nano particles (38%), which is lower than porosity 370b for 100% micro silver particles (43%).
  • FIG. 3 shows that the porosity for a bonding mixture containing nano silver particles and micro silver particles is lower than porosity of a bonding material containing all micro silver particles. In general, the lower the porosity, the stronger is the bond.
  • the above test data shows that a bonding material having a mixture of silver nano particles and micro particles is more suitable or desirable when bonding components using silver sintering.
  • the particular test data shown in FIG. 3 is provided for ease of understanding and is not to be considered a limitation.
  • FIG. 4 shows an exemplary heat conducting or heat transfer device 400, utilizing a thermoelectric device, made according to one embodiment of the disclosure.
  • the device 400 includes a thermoelectric element (also referred to herein as a "Peltier element) 410 that includes one or more p-doped elements 412 and one or more n-doped elements 414.
  • elements 412 and 414 may be made from bismuth telluride (Bi 2 Te 3 ).
  • the device 400 includes a first substrate 420 made from a suitable material, such as aluminum oxide (A1 2 0 3 ).
  • a side 421 of the substrate includes a conductive layer 424 made from a suitable material, such as a composition of titanium, palladium and gold.
  • a first side 413 of the Peltier element 410 is bonded to the conductive layer 424 via a sintered-silver layer 430 according to one of the methods described herein.
  • a second substrate 426 is coupled or attached to a second side 427 of a second substrate 420 via a conductive layer 428 and a silvered-sintered layer 432.
  • a heat generating device 440 for example a light emitting diode or another device, may be connected to the substrate 426 via a conductive layer 442 on the substrate 430, sintered-silver layer 444 and another conductive layer 446.
  • a heat sink 450 such as an aluminum block, may be attached to the substrate 420 to conduct heat from the Peltier element 410 to the heat sink 450.
  • Leads 447 and 449 connect circuitry to the device 440.
  • current from a source 460 may be applied to the Peltier element 410 to cause the heat to flow from the Peltier element 410 to the heat sink 450.
  • the p-doped element 412 is connected to the negative side 462 of the current source 460 while the n-doped element 414 is connected to the positive side 464 of the source 460.
  • the current is applied to the Peltier element 410, which causes the heat to move from the source 440 to the sink 450.
  • the current polarities for the Peltier element 410 may be reversed to cause the heat to flow from a heat source attached to substrate 420 to the device 440.
  • the embodiment of device 400 shown in FIG.4 is a particular embodiment of a thermoelectric module.
  • Other devices or elements may be bonded via sintered layers utilizing the methods described herein.
  • a relatively thin layer of a bonding material such as silver, serves as a bonding material or glue between a device and a substrate.
  • Silver has a very high melting point (962 degrees Centigrade) and relatively high thermal conductivity (429W/mK at 200K).
  • the silver-sintered layer thus provides an efficient path for conducing heat between adjoining members, such as a device and a substrate.
  • the performance of a silver-sintered bonding layer increases with the pressure applied to attach the die and the substrate.
  • a relatively thick bonding layer for example a layer having thickness greater than 70 micrometers
  • a noble metal material such as titanium/palladium/gold, as shown in FIG. 4.
  • Thermoelectric substrates such as made from aluminum oxide or silicon and germanium (SiGe) have low coefficients of thermal expansion ("CTE") compared to silver and thus it is desirable to reduce the CTE of the silver-sintered layer to reduce or minimize thermally induced stresses in the crystal bonded to the substrate to avoid cracking of the crystal. Such compatibility between thermal expansion coefficients becomes more important when relatively thick bonding layers (for example, greater than 50 micrometers) are used.
  • a suitable additive may be added to the silver particles.
  • selected amounts by weight or volume of diamond micro particles may be added to the silver particles.
  • Diamond particles have very low CTE (about 1 ppm/K) and very high thermal conductivity (between 1000 and 2000 W/m ).
  • FIG. 5 shows a graph or relationship 500 between the amount of diamond particles by weight in silver particles and the CTE of a sintered layer made from such mixtures.
  • the vertical axis shows the CTE (ppm/K) and the horizontal axis shows the diamond particle concentration percentage by weight.
  • the diamond particles may be homogeneously distributed in the silver particles to obtain a relatively uniform sintered bonding layer.
  • FIG. 5 also indicates the CTE of various compound used in the electronic industry, such as Zn 4 Sb 3 , Bi 2 Te 3 , Tio. 22 Co 4 Sbi 2 , Si75Ge25, pure silver and pure diamond.
  • FIG. 5 shows that the CTE for a silver-sintered bonding layer that includes about 50% diamond micro and nano particles is about the same as the CTE for a Silicon-Germanium (Si75Ge25) substrate.
  • a selected amount of an additive, such as diamond particles may be homogeneously mixed with silver particles to form the silver-sintered bonding layer to match or substantially match the CTE of the bonding layer with the CTE of a member or device.
  • the porosity of the silver-sintered bonding layer increases with the concentration of the diamond particles with a tendency toward saturation at about 60%) of diamond particles by weight.
  • by adding diamond nano particles in silver particles instead of diamond micro particles a higher filling degree can be achieved with lower porosity.
  • diamond nano particles result in lowering the porosity of the mixture, a sintered layer made from such a mixture also exhibits higher thermal conductivity.
  • an additive such as diamond nano and micro particles may be added to achieve a selected ratio between the silver and diamond particles so as to obtain a sintered bonding layer that has the desired CTE, porosity and thermal conductivity.
  • a method of attaching members includes placing a bonding material comprising a mixture of silver particles of micrometer size (micro particles) and/or nanometer size (nano particles) on a surface of a first member; placing the first member with the surface of the first member having the mixture on a surface of a second member; heating the bonding material to a selected temperature while applying a selected pressure on at least one of the first and second members for a selected time period to sinter the bonding material to attach the first member to the second member.
  • the silver nano particles in the bonding material are about fifty percent (50%) by weight.
  • an additive may be added to the silver particles to alter at least one of CTE, porosity and thermal conductivity of the sintered bonding layer.
  • a device made according to one embodiment of this disclosure includes a substrate and a die bonded onto the substrate by sintering a bonding material that contains silver micro particles and/or silver nano particles onto the substrate.
  • the bonding material may include silver nano particles between 0% and 100% by weight.
  • the substrate may be made from any suitable material, including silicon dioxide, aluminum dioxide, silicon-germanium, etc.
  • a device in one embodiment includes a Peltier element bonded to a substrate via a silver sintered layer.
  • the device may further include a heat source that provides heat to the Peltier element and a heat sink that draws heat away from the peltier element.
  • the silver-sintered layer may include an additive that reduces the CTE of the bonding layer.
  • the disclosure provides a device for conducting heat that includes a bonding layer made according one embodiment of the disclosure.
  • a particular embodiment of such a device includes a Peltier element having a first side and a second side, a first substrate, and a first silver-sintered bonding layer between the first side of the thermoelectric element and the first substrate to bond the thermoelectric element to the substrate and to transfer heat from the thermoelectric element to the substrate.
  • the device may further include a second substrate and a second silver- sintered layer between the second side of the thermoelectric element and the second substrate to bond the thermoelectric element to the second substrate and to transfer heat from the second substrate to the thermoelectric element.
  • the thermoelectric element includes a p- doped member and an n-doped member.
  • the first substrate may include a base member and a conductive member thereon and wherein the first sintered silver layer is bonded to the conductive member on the first substrate.
  • the device may further include a heat sink coupled to the first substrate for draining heat from the first substrate.
  • the device may further include a heat generating element coupled to the second substrate via a third silver sintered layer.
  • the silver-sintered layer may include nano silver particles and/or micro silver particles.
  • the silver-sintered layer may also include a selected additive that reduces the CTE of the silver-sintered layer.
  • the additive may be diamond nano and/or micro particles.
  • the diamond particles comprise about 50% of the weight of the bonding mixture.
  • the amount of the additive is selected so that the CTE of the sintered bonding layer is substantially the same as the CTE of the substrate.
  • the device further includes a source of supplying current to the peltier element to cause the heat to conduct from the thermoelectric element to the first substrate or from the first substrate to the thermoelectric element.
  • the disclosure provides a method of forming a heat conducting device that includes: providing a Peltier element; and attaching a substrate to the Peltier element via a silvered sintered layer.
  • the silver-sintered layer may include silver nano particles and/or micro particles.
  • the silver-sintered layer may also include an additive for controlling the CTE of the silver-sintered layer.
  • the present disclosure provides a method of joining a
  • thermoelectric device to a member including: providing a bonding material that includes at least one of micro particles and nano particles between the thermoelectric device and the member; and sintering the bonding material to join the thermoelectric device to the member.
  • the bonding material includes silver particles.
  • the bonding material may further include an additive that controls a coefficient of thermal expansion of the bonding material.
  • the additive is diamond powder.
  • the bonding material may include an additive that enhances a thermal conductivity of the bonding material.
  • the present disclosure provides a device for transferring heat that includes a thermoelectric device configured to transfer heat; and a member attached to the thermoelectric device via a sintered bonding material, wherein the sintered bonding material includes at least one of micro and nano particles.
  • the bonding material includes silver particles.
  • the bonding material may include an additive that controls a coefficient of thermal expansion of the bonding material.
  • the additive controlling the coefficient of thermal expansion is diamond powder.
  • the bonding material may further include an additive configured to enhance a thermal conductivity of the bonding material.
  • the present disclosure provides a device for conducting heat, the device including: a thermoelectric element having a first side and a second side; a first substrate; and a first silver- sintered bonding layer between the first side of the thermoelectric element and the first substrate configured to bond the thermoelectric element to the first substrate.
  • the device may further include a second substrate; and a second silver-sintered layer between the second side of the thermoelectric element and the second substrate configured to bond the thermoelectric element to the second substrate.
  • the thermoelectric element includes a p-doped member and an n-doped member.
  • the first substrate includes a base member and a conductive member thereon and wherein the first sintered-silver layer is bonded to the conductive member on the first substrate.
  • the device may include a heat sink coupled to the first substrate configured to drain heat from the first substrate.
  • the device may also include a heat-generating element coupled to the second substrate via a third silver-sintered layer.
  • the first silver-sintered layer includes one of nano silver particles and micro silver particles.
  • the first silver-sintered layer may include a selected additive that alters one of coefficient of thermal expansion and porosity of the first silver-sintered layer.
  • the device may further include a current source configured to supply current to the thermoelectric element to conduct heat as one of: (i) from the thermoelectric element to the first substrate; and (ii) from the first substrate to the thermoelectric element.
  • the present disclosure provides a method of providing a heat transfer device that includes: providing a thermoelectric element having a first side and a second side; attaching a first substrate to the first side of the thermoelectric element by a first silver- sintered bonding layer; and attaching a second substrate to the second side of the thermoelectric element by a second silver-sintered bonding layer.
  • the method may further include coupling a heat source to one of the first and second substrates and a heat sink to the other of the first and second substrates.
  • the method may further include providing a current to the thermoelectric element to transfer heat from the heat source to the heat sink.

Abstract

Cette invention concerne un dispositif permettant de conduire de la chaleur à partir d'une source vers un bloc récepteur. Dans un mode de réalisation, ce dispositif comprend un élément thermoélectrique couplé à un substrat par l'intermédiaire d'un matériau fritté comportant des particules nano et/ou micro. Dans un aspect de l'invention, le matériau fritté comprend des particules d'argent et dans un autre aspect le matériau fritté comprend également un additif pour contrôler le coefficient de dilatation thermique du matériau fritté.
PCT/US2013/023203 2012-02-01 2013-01-25 Dispositifs thermoélectriques utilisant une liaison frittée WO2013116107A1 (fr)

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EP13743614.3A EP2810310A4 (fr) 2012-02-01 2013-01-25 Dispositifs thermoélectriques utilisant une liaison frittée
US18/161,339 US20230243649A1 (en) 2012-02-03 2023-01-30 Systems and methods for estimation of building wall area and producing a wall estimation report

Applications Claiming Priority (2)

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US13/363,997 2012-02-01
US13/363,997 US20120291454A1 (en) 2011-05-20 2012-02-01 Thermoelectric Devices Using Sintered Bonding

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US13/385,607 Continuation US20130204575A1 (en) 2012-02-03 2012-02-03 Systems and methods for estimation of building floor area

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JP2009117792A (ja) * 2007-10-19 2009-05-28 Ube Ind Ltd 熱電変換モジュール及びその製造方法
US20100193001A1 (en) * 2007-07-09 2010-08-05 Kabushiki Kaisha Toshiba Thermoelectric conversion module, and heat exchanger, thermoelectric temperature control device and thermoelectric generator employing the same
US20100275435A1 (en) * 2007-09-07 2010-11-04 Sumitomo Chemical Company, Limited Method for manufacturing thermoelectric conversion element
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EP1154495A2 (fr) * 1994-05-23 2001-11-14 Seiko Instruments Inc. Dispositif thermoélectrique et procédé de fabrication
US20100193001A1 (en) * 2007-07-09 2010-08-05 Kabushiki Kaisha Toshiba Thermoelectric conversion module, and heat exchanger, thermoelectric temperature control device and thermoelectric generator employing the same
US20100275435A1 (en) * 2007-09-07 2010-11-04 Sumitomo Chemical Company, Limited Method for manufacturing thermoelectric conversion element
JP2009117792A (ja) * 2007-10-19 2009-05-28 Ube Ind Ltd 熱電変換モジュール及びその製造方法
US20120000500A1 (en) * 2009-03-03 2012-01-05 Tokyo University of Science Education Foundation Administration Organization Thermoelectric conversion element and thermoelectric conversion module

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EP2810310A1 (fr) 2014-12-10

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