WO2013099893A1 - Etching method for glass substrate - Google Patents

Etching method for glass substrate Download PDF

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Publication number
WO2013099893A1
WO2013099893A1 PCT/JP2012/083556 JP2012083556W WO2013099893A1 WO 2013099893 A1 WO2013099893 A1 WO 2013099893A1 JP 2012083556 W JP2012083556 W JP 2012083556W WO 2013099893 A1 WO2013099893 A1 WO 2013099893A1
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WO
WIPO (PCT)
Prior art keywords
glass substrate
etching
substrate
end surface
support
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PCT/JP2012/083556
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French (fr)
Japanese (ja)
Inventor
彰久 佐伯
橋本 隆志
道治 江田
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日本電気硝子株式会社
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Publication of WO2013099893A1 publication Critical patent/WO2013099893A1/en

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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00Surface treatment of glass, not in the form of fibres or filaments, by etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706Mechanical details, e.g. roller, belt
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

Definitions

  • the present invention relates to a method for etching a glass substrate, and more particularly to a technique for efficiently etching the periphery of an end face of a glass substrate.
  • Patent Document 1 an end face of a glass substrate supported by a plurality of transport rollers and an edge portion continuous with the end face are provided with a film of an etching solution formed by surface tension in a pair of grooves that are opened in a laterally opposed manner.
  • a technique for performing etching by passing the film is disclosed.
  • Patent Document 2 discloses a technique for performing etching by immersing an end surface to be etched of a glass substrate and an edge portion connected to the end surface in an etchant contained in a container.
  • Patent Document 1 a glass substrate is placed in a posture along a horizontal plane on a transport roller, and a groove for forming a film of an etching solution is derived from the posture of such a glass substrate.
  • a problem as shown below because it is open sideways.
  • the groove forming the etching solution film is opened sideways, it is difficult to prevent the leakage of the etching solution from the inside of the groove. May be induced by the flow of the etchant leaking from the groove and may flow out to a portion that is not an object of etching. When such a situation occurs, glass powder or the like may remain on the surface of the substrate as particles when drying the substrate in the subsequent process, which may contaminate the substrate, which is one of the factors that degrade the quality of the substrate. It was.
  • Patent Document 2 since the technique disclosed in Patent Document 2 is configured such that the glass substrate is held in a posture along the vertical plane and only the lower end and the edge thereof are immersed in the etching solution, particularly the production of the glass substrate. A big problem is introduced from the viewpoint of efficiency.
  • the glass substrate can be etched only one by one even though there are a plurality of end faces and edges to be etched. For this reason, in order to etch a plurality of locations on the glass substrate, the operation becomes extremely troublesome and complicated, and the time required for the operation is unduly prolonged, and the production efficiency of the substrate is remarkably deteriorated. .
  • the present invention made in view of the above circumstances has as a technical problem to suppress the deterioration of the quality of the substrate and improve the production efficiency when etching the glass substrate.
  • the present invention is a glass substrate etching method in which a pair of end faces parallel to the longitudinal direction of the glass substrate and the edges of the front and back surfaces connected to these end faces are immersed in an etching solution for etching.
  • the method at least a central portion in the horizontal direction of the glass substrate is placed on a support member extending in the vertical direction, and the glass member protrudes from both sides in the horizontal direction. It is characterized in that the pair of end faces and edges in a state of bending downward are immersed in the etching solution.
  • immersion in the etching solution includes not only the case of being immersed in the etching solution but also the case of being wet without being immersed.
  • the glass substrate protrudes from the support member to both sides in the lateral direction and is bent downward, and a pair of parallel end surfaces and edge portions of the front and back surfaces connected to these end surfaces (hereinafter referred to as the end surfaces).
  • the end face and the edge are collectively referred to as an end face).
  • the supporting member supports only the central portion in the lateral direction of the glass substrate from below.
  • the support member may support only the central portion in the horizontal direction of the glass substrate and may be the only support member extending in the vertical direction, or a plurality of the support members arranged in a row apart from each other in the vertical direction. It may be a set of support members.
  • the support member is preferably a transport means for transporting the glass substrate in the vertical direction.
  • an end surface support having a support surface for supporting the end surface of the glass substrate is provided, and the end surface portion of the glass substrate is immersed in an etching solution in a state where the end surface of the glass substrate is supported on the support surface.
  • the pair of end surfaces parallel to the vertical direction of the glass substrate are supported by the end surface support body, thereby making it possible to regulate the lateral movement of the end surface portion of the substrate and dropping the substrate from the transport path. It is possible to carry it stably without causing it.
  • the end surface portion of the glass substrate may be immersed in the etching solution by dropping the etching solution on the support surface of the end surface support.
  • an etching solution film can be formed on the support surface of the end surface support, and the end surface portion can be etched by passing the film through the end surface portion of the substrate and immersing the film in the etching solution. It becomes possible.
  • the end surface support and the edge of the glass substrate may be immersed in the etching solution by forming the end surface support with a porous material and immersing a part thereof in the etching solution.
  • the end surface support is formed of a porous material and a part of the end surface support is immersed in the etching solution, so that the etchant impregnated in the end surface support is supported by the end face support by capillary action. Start from the surface. Thereby, the end surface portion of the glass substrate is immersed and etching can be performed.
  • the end surface support may be an end surface support roller partly immersed in an etching solution.
  • substrate in an end surface support roller is a peripheral surface (support surface) of a roller with rotation of a roller because a part of roller is immersed in etching liquid.
  • the etching solution is always attached.
  • the roller can etch the end surface portion of the substrate by the etching solution attached to the support surface while transporting the substrate along the transport path.
  • the peripheral speed of the support surface of the roller and the speed of conveying the end face of the substrate in the vertical direction can be made the same, it becomes possible to prevent sliding between the two as much as possible. The problem of scratches on the end face is less likely to occur.
  • a plurality of auxiliary support rollers for supporting the glass substrate are provided between the conveying means and the end surface of the glass substrate, and the arrangement positions of the plurality of auxiliary support rollers are shifted to the end surface side. Accordingly, the diameter may be reduced.
  • a pressing member for pressing the glass substrate downward may be provided between the conveying means and the end surface of the glass substrate.
  • the above-described effects can be achieved by providing the pressing member.
  • the relation between the thickness of the substrate and the lateral length of the substrate is (the lateral length of the substrate / the thickness of the substrate) ⁇ 2000, the flexibility of the substrate is difficult to be exerted. Is preferred.
  • the etching solution is preferably contained in a pair of bowl-shaped containers extending in the vertical direction.
  • the etching solution is preferably supplied from one end of the bowl-shaped container and discharged from the other end of the bowl-shaped container.
  • the etching solution is mainly composed of hydrofluoric acid or ammonium hydrofluoride.
  • FIG. 1 is a plan view showing an etching apparatus used in the glass substrate etching method according to the first embodiment of the present invention
  • FIG. 2 is a cross-sectional view taken along line AA of FIG.
  • the etching apparatus 1 includes a plurality of transport rollers R1 which are transport means for transporting a glass substrate G (hereinafter simply referred to as a substrate G) in the vertical direction, and an etching solution for etching the substrate G. It is comprised with a pair of bowl-shaped container T which accommodates L, and several end surface support roller R2 which is an end surface support body which supports the end surface Ga of the board
  • the plurality of transport rollers R1 are provided in a straight line along the central portion Gc of the substrate G, support the central portion Gc in the lateral direction (width direction) of the substrate G, and rotate by the operation of a driving mechanism (not shown). Thus, it is possible to continuously transport the plurality of substrates G in the V direction (vertical direction). Further, the contact surface of the transport roller R1 with the substrate G is formed in a curved surface.
  • the pair of bowl-shaped containers T are provided to be spaced apart from the plurality of transport rollers R1 in parallel in the lateral direction and open upward. Moreover, the height position is located below compared with the conveyance roller R1. Further, in the bowl-shaped container T, an etching solution L containing ammonium hydrofluoride as a main component flows in the V direction.
  • the end surface support roller R2 rotates in the bowl-shaped container T via a shaft attached to the side wall of the bowl-shaped container T, and a part thereof is immersed in the etching solution L accommodated in the bowl-shaped container T. ing. Further, a conical support surface R2a that supports the end face Ga of the substrate G is formed. The support surface R2a gradually increases in diameter from the inner side to the outer side of the end surface support roller R2.
  • FIG. 3 is a view of the etching apparatus 1 viewed from the direction B shown in FIG.
  • the portion indicated by cross-hatching in FIGS. 1 to 3 that is, the end surface Ga of the substrate G and the edge portion Gb of the front and back surfaces connected to the end surface Ga are continuously etched.
  • the conveyance roller R1 is not shown.
  • a plurality of substrates G are continuously conveyed in the V direction.
  • the end surface support roller R2 that supports the end surface Ga of the substrate G is shown in FIG. 3 due to friction between the end surface Ga and the support surface R2a. Rotate in the W direction (idle). For this reason, the support surface R2a is configured such that a part of the end surface support roller R2 is immersed in the etching liquid L, and the intrusion into the etching liquid L and escape from the etching liquid L with the rotation of the end surface support roller R2. repeat. Thereby, the end surface support roller R2 etches the end surface Ga of the substrate G and the edge portion Gb connected to the end surface Ga by the etching liquid L attached to the support surface R2a while transporting the substrate G in the V direction.
  • the portion protruding laterally from the transport roller R1 is bent downward due to gravity, it is not an object of etching the substrate G from the end face Ga of the substrate G or the edge portion Gb connected to the end face Ga. There is no risk of the etchant L flowing out toward the part.
  • the substrate G is dried, it is possible to appropriately avoid a situation in which glass powder or the like generated when the substrate G is cut remains as particles on the substrate G and the substrate G is contaminated.
  • the relative speed between the peripheral speed of the support surface R2a of the end surface support roller R2 and the transport speed of the end surface Ga of the substrate G becomes substantially zero, it becomes possible to prevent sliding between the two as much as possible. The problem that scratches or the like occur on the end face Ga of the substrate G is less likely to occur. Therefore, it is possible to further suppress the quality deterioration of the substrate G.
  • the production efficiency of the substrate G can be improved. Further, since the end surface Ga of the substrate G is supported by the end surface support roller R2, the lateral movement of the substrate G can be restricted, so that the substrate G can be transported stably. Further, since the etching solution L is contained in the bowl-shaped container T, it is not necessary to use an unnecessarily large amount of the etching solution L, so that the production cost can be reduced.
  • FIG. 4 is a cross-sectional view showing an etching apparatus 1 used in the glass substrate etching method according to the second embodiment of the present invention.
  • the same components as those in the etching apparatus 1 used in the glass substrate etching method according to the first embodiment are denoted by the same reference numerals, and redundant description is omitted. The same applies to third to sixth embodiments described later.
  • the difference between the etching apparatus 1 used for the glass substrate etching method according to the second embodiment and the etching apparatus 1 used for the glass substrate etching method according to the first embodiment described above is that the end face support The etching jig S is used instead of the end support roller R2, and the etching liquid supply source (not shown) for dropping the etching liquid L on the support surface Sa of the etching jig S is provided. It is.
  • a film of the etchant L can be formed on the support surface Sa of the etching jig S, and the film is formed on the end surface Ga and the edge Gb of the substrate G. Can be etched, and the end face Ga and the edge Gb can be etched.
  • FIG. 5 is a cross-sectional view showing an etching apparatus 1 used in the glass substrate etching method according to the third embodiment of the present invention.
  • the difference between the etching apparatus 1 used for the glass substrate etching method according to the third embodiment and the etching apparatus 1 used for the glass substrate etching method according to the first embodiment described above is the end face support.
  • the plate-like body H is used instead of the end face support roller R2. This plate-like body H is formed of a porous material.
  • the etching solution L impregnated in the plate-like body H is removed by a capillary phenomenon. Ascend in the body H.
  • the rising etching solution L oozes from the support surface Ha of the plate-like body H, so that the end face Ga and the edge Gb of the substrate G are immersed and etching can be performed.
  • the thickness of the substrate G to be etched is preferably 0.7 mm or less, more preferably 0.5 mm or less. And most preferably 0.3 mm or less.
  • the length of the substrate G in the lateral direction is preferably 1500 mm or more.
  • FIG. 6 is a cross-sectional view showing an etching apparatus 1 used in the glass substrate etching method according to the fourth embodiment of the present invention.
  • the difference between the etching apparatus 1 used for the glass substrate etching method according to the fourth embodiment and the etching apparatus 1 used for the glass substrate etching method according to the first embodiment described above is the end face support roller.
  • the auxiliary support roller R3 has a smaller diameter as it is provided on the end face Ga side, and is provided in parallel with the transport roller R1.
  • the glass substrate etching method using this etching apparatus 1 is an etching method for a particularly thin substrate G, and is preferably used for a substrate G having a thickness of 0.1 mm or less. According to such a method, even when the thin substrate G is transported, it is possible to suppress the substrate G from being bent excessively, and at the central portion Gc of the substrate G placed on the transport roller R1. The generation of a large tensile stress due to the increase in the curvature of the substrate G can be prevented.
  • FIG. 7 is a sectional view showing an etching apparatus 1 used in the glass substrate etching method according to the fifth embodiment of the present invention.
  • the difference between the etching apparatus 1 used for the glass substrate etching method according to the fifth embodiment and the etching apparatus 1 used for the glass substrate etching method according to the first embodiment described above is that the end face support roller Between the point where R2 is not provided and between the transport roller R1 and the end face Ga of the substrate G, a pressing roller R4 which is a pressing member for pressing the substrate G downward is provided.
  • the pressing roller R4 can move up and down along the Z direction shown in FIG.
  • the glass substrate etching method using this etching apparatus 1 is to etch a thick substrate G, and in particular, the thickness of the substrate G and the lateral length of the substrate G (the lateral length of the substrate G). / Thickness of the substrate G) ⁇ 2000 is preferably used. According to such a method, even when etching is performed on the thick substrate G, the end face Ga and the edge portion Gb of the substrate G can be favorably bent downward.
  • FIG. 8 is a perspective view showing an etching apparatus 2 used in the glass substrate etching method according to the sixth embodiment of the present invention.
  • the etching apparatus 2 includes a carriage 10 that is a means for transporting the substrate G, and a bowl-like container T that is the same as the etching apparatus 1 used in the glass substrate etching method according to the first to fifth embodiments (not shown). Yes.
  • the carriage 10 is formed with a support portion D that supports the central portion Gc of the substrate G. Further, the contact surface of the support portion D with the substrate G is formed in a curved surface and is provided with a plurality of vent holes P. By applying a negative pressure by a negative pressure source (not shown), the substrate G is It can be held by suction.
  • the contact surface with the substrate G in the support portion D is formed in a curved surface, so that it acts on the substrate G by a negative pressure source (not shown).
  • a negative pressure source not shown.
  • the width of the edge Gb of the substrate G to be etched is preferably 1.0 mm or less.
  • the glass substrate etching method according to the present invention is not limited to the glass substrate etching method according to each of the above embodiments.
  • the transport roller R1 is used as the transport means for transporting the substrate G.
  • a carriage 10 as shown in the sixth embodiment may be used.
  • a conveyor or the like including a plurality of vent holes P formed in the support portion D of the carriage 10 and a negative pressure source that applies a negative pressure to the vent holes P may be used.
  • the bowl-shaped container T does not need to be longer than the vertical length of the substrate G as shown in the above embodiment, and it is sufficient if it has a length about half the vertical length of the substrate G. is there.
  • the bowl-shaped container T is not necessarily provided, and both the pair of end faces Ga and the edge Gb to be etched are used by using a single container having a lateral width longer than the lateral length of the substrate G. You may make it soak in the etching liquid L accommodated in the container. Furthermore, the direction of the flow of the etching solution L flowing in the bowl-shaped container T may be opposite to the V direction described in the first embodiment.
  • the etching solution L hydrofluoric acid, hydrochloric acid, sodium hydroxide, or the like can be used in addition to the main component of ammonium hydrofluoride used in the above embodiment.
  • the shapes of the end surface support roller R2, the etching jig S, and the plate-like body H may be appropriately changed in consideration of the bending state of the substrate G and the like.
  • the length in the vertical direction of the substrate G to be etched is longer than the length in the horizontal direction.
  • the length is not limited to this, and the length in the horizontal direction is longer than the length in the vertical direction. It may be longer.

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Abstract

At least a central part (Gc) of a glass substrate (G) in the transverse direction is mounted on a transport roller (R1) extending in a longitudinal direction. Both sides jut out in the transverse direction from the transport roller (R1), and in a state where these parts that jut out bend downward, the pair of end surfaces (Ga) and edge parts (Gb) are immersed in an etching fluid (L).

Description

ガラス基板のエッチング方法Etching method of glass substrate
 本発明は、ガラス基板のエッチング方法に係り、詳しくは、ガラス基板の端面周辺を効率良くエッチングするための技術に関する。 The present invention relates to a method for etching a glass substrate, and more particularly to a technique for efficiently etching the periphery of an end face of a glass substrate.
 周知のように、FPD用ガラス基板は、近年急速に普及しているモバイル用端末等の軽量化への要求の高まりに伴って、薄肉化が推進されている。この種の厚みの薄いガラス基板は、その主たる特性として可撓性を有しており、この特性を近い将来において曲面ディスプレイ等に利用することが検討されている。 As is well known, thinning of FPD glass substrates has been promoted with the increasing demand for weight reduction of mobile terminals and the like that have been rapidly spreading in recent years. This kind of thin glass substrate has flexibility as its main characteristic, and it has been studied to use this characteristic for a curved display or the like in the near future.
 ところで、上記のような薄肉のガラス基板を湾曲させる場合に、当該基板の端面や端面に連なる縁部に微小クラックが存在していると、基板に致命的な悪影響を及ぼす。詳述すると、基板の湾曲が大きくなる(曲率が大きくなる)につれて、湾曲した基板の凸面となる側の部位に作用する引張応力も次第に大きくなる。このとき、基板の端面や縁部に微小クラックが存在していると、微小クラックの先端で応力集中が発生しやすく、そのため微小クラックを基点として亀裂が進展し、基板の損傷や破損を引き起こす要因となっていた。 By the way, when a thin glass substrate as described above is curved, if a microcrack is present at the end surface of the substrate or the edge connected to the end surface, a fatal adverse effect is exerted on the substrate. More specifically, as the curvature of the substrate increases (the curvature increases), the tensile stress acting on the portion of the curved substrate that becomes the convex surface gradually increases. At this time, if there are micro cracks on the end face or edge of the substrate, stress concentration is likely to occur at the tip of the micro crack, so that the crack progresses from the micro crack and causes damage or breakage of the substrate. It was.
 このような微小クラックは、主として、ガラス基板の製造工程において、大面積の基板から小面積の基板を切り出す際に生じることが判明している。しかしながら、従来ガラス基板の切断に用いられてきたレーザー割断法等を実施する際に、微小クラックの発生を効果的に防止することは困難であった。そのため、基板の切断後に下記の特許文献1,2に開示されているような技術を用いて、基板の端面及び縁部にエッチングを施すことにより、上述のような問題に対策を採ることが通例となっている。 It has been found that such micro cracks are mainly generated when a small area substrate is cut out from a large area substrate in the glass substrate manufacturing process. However, it has been difficult to effectively prevent the occurrence of microcracks when performing a laser cleaving method or the like that has been conventionally used for cutting glass substrates. Therefore, after cutting the substrate, it is usual to take measures against the above-mentioned problems by etching the end face and the edge of the substrate using the techniques disclosed in Patent Documents 1 and 2 below. It has become.
 特許文献1には、複数の搬送ローラーに支持されたガラス基板の端面及び端面に連なる縁部に、横向きに対向して開口した一対の溝内において、表面張力によって形成されたエッチング液の膜を通過させることで、エッチングを施す技術が開示されている。 In Patent Document 1, an end face of a glass substrate supported by a plurality of transport rollers and an edge portion continuous with the end face are provided with a film of an etching solution formed by surface tension in a pair of grooves that are opened in a laterally opposed manner. A technique for performing etching by passing the film is disclosed.
 特許文献2には、ガラス基板のエッチングの対象となる端面及び端面に連なる縁部を、容器内に収容されたエッチング液に浸漬することで、エッチングを施す技術が開示されている。 Patent Document 2 discloses a technique for performing etching by immersing an end surface to be etched of a glass substrate and an edge portion connected to the end surface in an etchant contained in a container.
特開2009-125643号公報JP 2009-125643 A 特開2010-26133号公報JP 2010-26133 A
 上記特許文献1,2に開示された技術によれば、ガラス基板の端面及び端面に連なる縁部に存在する微小クラックを除去、或いは微小クラックの屈曲した輪郭形状を、丸みを帯びた輪郭形状に変形させることができる。このため、微小クラックの切欠きの先端において、応力集中の発生を抑制することが可能となる。 According to the techniques disclosed in Patent Documents 1 and 2, the edge surface of the glass substrate and the edge of the edge connected to the edge surface are removed, or the bent contour shape of the minute crack is changed to a rounded contour shape. Can be deformed. For this reason, it becomes possible to suppress the occurrence of stress concentration at the tip of the notch of the microcrack.
 しかしながら、特許文献1に開示された技術は、ガラス基板が、搬送ローラー上に水平面に沿う姿勢で載置されると共に、このようなガラス基板の姿勢に由来してエッチング液の膜を形成する溝が横向きに開口しているため、以下に示すような問題を有していた。 However, in the technique disclosed in Patent Document 1, a glass substrate is placed in a posture along a horizontal plane on a transport roller, and a groove for forming a film of an etching solution is derived from the posture of such a glass substrate. Has a problem as shown below because it is open sideways.
 すなわち、エッチング液の膜を形成する溝が横向きに開口していると、溝内からのエッチング液の漏出を防止することが困難であるため、基板の切断の際に端面周辺に付着したガラス粉等が、溝内から漏出したエッチング液の流れによって誘導されて、エッチングの対象ではない部位まで流出してしまう恐れがあった。このような事態を生じると、後工程において、基板を乾燥する際にガラス粉等がパーティクルとして基板の表面に残存し、基板を汚染することがあり、基板の品質を低下させる要因の一つとなっていた。 That is, if the groove forming the etching solution film is opened sideways, it is difficult to prevent the leakage of the etching solution from the inside of the groove. May be induced by the flow of the etchant leaking from the groove and may flow out to a portion that is not an object of etching. When such a situation occurs, glass powder or the like may remain on the surface of the substrate as particles when drying the substrate in the subsequent process, which may contaminate the substrate, which is one of the factors that degrade the quality of the substrate. It was.
 一方、特許文献2に開示された技術は、ガラス基板が鉛直面に沿う姿勢で保持されて下方の端部及びその縁部のみがエッチング液に浸される構成であるため、特にガラス基板の生産効率という観点から大きな問題を招来する。 On the other hand, since the technique disclosed in Patent Document 2 is configured such that the glass substrate is held in a posture along the vertical plane and only the lower end and the edge thereof are immersed in the etching solution, particularly the production of the glass substrate. A big problem is introduced from the viewpoint of efficiency.
 すなわち、同文献に開示されたエッチング方法によると、ガラス基板にはエッチングを施すべき端面及び縁部が複数箇所に存在しているにも拘らず、一箇所ずつにしかエッチングを施すことができない。このため、ガラス基板の複数箇所にエッチングを施すには、その作業が極めて面倒且つ煩雑になると共に、作業に要する時間が不当に長期化され、基板の生産効率が著しく悪化するという問題があった。 That is, according to the etching method disclosed in this document, the glass substrate can be etched only one by one even though there are a plurality of end faces and edges to be etched. For this reason, in order to etch a plurality of locations on the glass substrate, the operation becomes extremely troublesome and complicated, and the time required for the operation is unduly prolonged, and the production efficiency of the substrate is remarkably deteriorated. .
 上記事情に鑑みなされた本発明は、ガラス基板にエッチングを施すに当たって、基板の品質の低下を抑制すると共に、生産効率の向上を図ることを技術的課題とする。 The present invention made in view of the above circumstances has as a technical problem to suppress the deterioration of the quality of the substrate and improve the production efficiency when etching the glass substrate.
 上記課題を解決するために創案された本発明は、ガラス基板の縦方向に平行な一対の端面及びこれらの端面に連なる表裏面の縁部を、エッチング液に浸してエッチングを施すガラス基板のエッチング方法であって、前記ガラス基板の横方向における少なくとも中央部を前記縦方向に延びる支持部材上に載置し、該支持部材から前記横方向の両側に食み出し、且つそれら食み出し部が下方に撓んだ状態での前記一対の端面及び縁部を、前記エッチング液に浸すことに特徴づけられる。ここで、上記の「エッチング液に浸す」とは、エッチング液に浸漬させる場合のみならず、浸漬されずに濡れた状態にする場合をも含む。 In order to solve the above-mentioned problems, the present invention is a glass substrate etching method in which a pair of end faces parallel to the longitudinal direction of the glass substrate and the edges of the front and back surfaces connected to these end faces are immersed in an etching solution for etching. In the method, at least a central portion in the horizontal direction of the glass substrate is placed on a support member extending in the vertical direction, and the glass member protrudes from both sides in the horizontal direction. It is characterized in that the pair of end faces and edges in a state of bending downward are immersed in the etching solution. Here, “immersing in the etching solution” includes not only the case of being immersed in the etching solution but also the case of being wet without being immersed.
 このような方法によれば、ガラス基板は、支持部材から横方向の両側に食み出し且つ下方に撓んだ状態にある平行な一対の端面及びこれらの端面に連なる表裏面の縁部(以下、この端面と縁部とを総称して端面部という)が、エッチング液に浸される。このような状態の下では、エッチング液が、ガラス基板の端面部から中央部(エッチングの対象ではない部位)に向かって流出する恐れがなくなる。これにより、基板を乾燥する際に、基板の切断時に生じたガラス粉等がパーティクルとして基板の中央部に残存し、基板が汚染されるという事態を適切に回避することができる。従って、基板の品質低下の抑制を図ることが可能となる。加えて、支持部材から横方向に食み出した上記の一対の端面部に対して、同時にエッチングを施すことができるため、基板の生産効率を向上させることも可能となる。 According to such a method, the glass substrate protrudes from the support member to both sides in the lateral direction and is bent downward, and a pair of parallel end surfaces and edge portions of the front and back surfaces connected to these end surfaces (hereinafter referred to as the end surfaces). The end face and the edge are collectively referred to as an end face). Under such a state, there is no possibility that the etching solution flows out from the end surface portion of the glass substrate toward the central portion (portion not to be etched). Thereby, when drying a board | substrate, the situation where the glass powder etc. which were produced at the time of the cutting | disconnection of a substrate remain | survive as a particle in the center part of a board | substrate and a board | substrate is contaminated can be avoided appropriately. Accordingly, it is possible to suppress the deterioration of the substrate quality. In addition, since the pair of end surface portions protruding from the support member in the lateral direction can be simultaneously etched, the production efficiency of the substrate can be improved.
 上記の方法において、支持部材は、ガラス基板の横方向における中央部のみを下方より支持するものであることが好ましい。この場合、支持部材は、ガラス基板の横方向における中央部のみを支持し、縦方向に延びた唯一つの支持部材であってもよく、或いは、縦方向に相互に離間して一列に並んだ複数の支持部材の組であってもよい。 In the above method, it is preferable that the supporting member supports only the central portion in the lateral direction of the glass substrate from below. In this case, the support member may support only the central portion in the horizontal direction of the glass substrate and may be the only support member extending in the vertical direction, or a plurality of the support members arranged in a row apart from each other in the vertical direction. It may be a set of support members.
 このようにすれば、ガラス基板における支持部材との当接面が、横方向の一箇所のみとなるため、基板に傷が生じ難くなる。 In this case, since the contact surface of the glass substrate with the support member is only one place in the horizontal direction, the substrate is hardly damaged.
 上記の方法において、支持部材は、ガラス基板を縦方向に搬送する搬送手段であることが好ましい。 In the above method, the support member is preferably a transport means for transporting the glass substrate in the vertical direction.
 このようにすれば、複数のガラス基板の端面部に対して、連続的にエッチングを施すことが可能となり、より基板の生産効率を高めることができる。 In this way, it becomes possible to continuously etch the end face portions of a plurality of glass substrates, and the production efficiency of the substrates can be further increased.
 上記の方法において、ガラス基板の端面を支持する支持面を有する端面支持体を設け、支持面にガラス基板の端面を支持させた状態で、ガラス基板の端面部をエッチング液に浸すことが好ましい。 In the above method, it is preferable that an end surface support having a support surface for supporting the end surface of the glass substrate is provided, and the end surface portion of the glass substrate is immersed in an etching solution in a state where the end surface of the glass substrate is supported on the support surface.
 このようにすれば、ガラス基板の縦方向に平行な一対の端面が端面支持体によって支持されることにより、基板の端面部の横方向移動を規制することが可能となり、基板を搬送経路から脱落させることなく、安定的に搬送することが可能となる。 In this way, the pair of end surfaces parallel to the vertical direction of the glass substrate are supported by the end surface support body, thereby making it possible to regulate the lateral movement of the end surface portion of the substrate and dropping the substrate from the transport path. It is possible to carry it stably without causing it.
 上記の方法において、端面支持体の支持面に、エッチング液を滴下することにより、ガラス基板の端面部をエッチング液に浸すようにしてもよい。 In the above method, the end surface portion of the glass substrate may be immersed in the etching solution by dropping the etching solution on the support surface of the end surface support.
 このようにすれば、端面支持体の支持面にエッチング液の膜を形成することができ、基板の端面部に当該膜を通過させ、エッチング液に浸すことで、端面部にエッチングを施すことが可能となる。 In this way, an etching solution film can be formed on the support surface of the end surface support, and the end surface portion can be etched by passing the film through the end surface portion of the substrate and immersing the film in the etching solution. It becomes possible.
 上記の方法において、端面支持体を多孔質材料で形成し且つその一部をエッチング液に浸漬させることにより、ガラス基板の端面及び縁部をエッチング液に浸すようにしてもよい。 In the above method, the end surface support and the edge of the glass substrate may be immersed in the etching solution by forming the end surface support with a porous material and immersing a part thereof in the etching solution.
 このようにすれば、端面支持体が多孔質材料で形成され且つその一部がエッチング液に浸漬されていることにより、端面支持体内に含浸されたエッチング液は、毛細管現象によって端面支持体の支持面から沁みだす。これにより、ガラス基板の端面部が浸され、エッチングを施すことができる。 In this case, the end surface support is formed of a porous material and a part of the end surface support is immersed in the etching solution, so that the etchant impregnated in the end surface support is supported by the end face support by capillary action. Start from the surface. Thereby, the end surface portion of the glass substrate is immersed and etching can be performed.
 上記の方法において、端面支持体は、その一部がエッチング液に浸漬した端面支持ローラーであってもよい。 In the above method, the end surface support may be an end surface support roller partly immersed in an etching solution.
 このようにすれば、端面支持ローラーにおける基板の端面を支持する支持面は、ローラーの一部がエッチング液に浸漬していることにより、ローラーの回転に伴って、ローラーの周面(支持面)には、常にエッチング液が付着していることになる。これにより、ローラーは、基板を搬送経路に沿って搬送しつつ、支持面に付着したエッチング液によって基板の端面部にエッチングを施すことができる。また、ローラーの支持面の周速度と、基板の端面を縦方向に搬送する速度とを同一にすることができるため、両者間の摺動を可及的に防止することが可能となり、基板の端面に擦り傷等が発生するという不具合も起こり難くなる。 If it does in this way, the support surface which supports the end surface of the board | substrate in an end surface support roller is a peripheral surface (support surface) of a roller with rotation of a roller because a part of roller is immersed in etching liquid. In this case, the etching solution is always attached. Thereby, the roller can etch the end surface portion of the substrate by the etching solution attached to the support surface while transporting the substrate along the transport path. Also, since the peripheral speed of the support surface of the roller and the speed of conveying the end face of the substrate in the vertical direction can be made the same, it becomes possible to prevent sliding between the two as much as possible. The problem of scratches on the end face is less likely to occur.
 上記の方法において、搬送手段とガラス基板の端面との間に、ガラス基板を支持する複数の補助支持ローラーを設けると共に、複数の補助支持ローラーは、端面の側にその配設位置が移行するに連れて、その径が小さくされているようにしてもよい。 In the above method, a plurality of auxiliary support rollers for supporting the glass substrate are provided between the conveying means and the end surface of the glass substrate, and the arrangement positions of the plurality of auxiliary support rollers are shifted to the end surface side. Accordingly, the diameter may be reduced.
 このようにすれば、特に薄肉のガラス基板を搬送する場合に、基板が過度に撓むことを抑制し得ると共に、搬送手段上に載置された基板の中央部において、基板の曲率の増大に起因する大きな引張応力の発生を防止することができる。また、補助支持ローラーを設けたことによって生じる危惧も下記のように的確に排除される。すなわち、基板による荷重の大部分は、基板の中央部を支持する搬送手段に負荷され、補助支持ローラーに負荷される荷重は、搬送手段と比べて小さいため、基板における補助支持ローラーとの当接面において、擦り傷等が生じる恐れも可及的に低減することができる。 In this way, particularly when a thin glass substrate is transported, it is possible to suppress the substrate from being excessively bent and to increase the curvature of the substrate at the central portion of the substrate placed on the transport means. It is possible to prevent the occurrence of large tensile stress. Moreover, the fear which arises by providing an auxiliary | assistant support roller is eliminated exactly as follows. That is, most of the load due to the substrate is applied to the transport means that supports the center of the substrate, and the load applied to the auxiliary support roller is smaller than that of the transport means. On the surface, the risk of scratches and the like can be reduced as much as possible.
 上記の方法において、搬送手段とガラス基板の端面との間に、ガラス基板を下方に押圧する押圧部材を設けてもよい。 In the above method, a pressing member for pressing the glass substrate downward may be provided between the conveying means and the end surface of the glass substrate.
 このようにすれば、板厚が大きく、撓みにくいガラス基板にエッチングを施すような場合であっても、押圧部材を設けたことにより、上述の効果を奏することができる。特に、基板の厚みと基板の横方向の長さとが(基板の横方向長さ/基板の厚み)<2000の関係にあるとき、基板の可撓性が発揮されにくいため、押圧部材を設けることが好ましい。 In this way, even when etching is performed on a glass substrate that has a large thickness and is not easily bent, the above-described effects can be achieved by providing the pressing member. In particular, when the relation between the thickness of the substrate and the lateral length of the substrate is (the lateral length of the substrate / the thickness of the substrate) <2000, the flexibility of the substrate is difficult to be exerted. Is preferred.
 上記の方法において、エッチング液は、縦方向に延びる一対の樋状容器に収容されていることが好ましい。 In the above method, the etching solution is preferably contained in a pair of bowl-shaped containers extending in the vertical direction.
 このようにすれば、不要に多量のエッチング液を使用する必要がなくなるため、生産コストの低廉化を図ることが可能となる。 In this way, it becomes unnecessary to use an unnecessarily large amount of etching solution, so that the production cost can be reduced.
 上記の方法において、エッチング液は、樋状容器の一端から供給し、樋状容器の他端から排出することが好ましい。 In the above method, the etching solution is preferably supplied from one end of the bowl-shaped container and discharged from the other end of the bowl-shaped container.
 このようにすれば、常に新鮮なエッチング液によって、基板の端面部にエッチングを施すことが可能となり、エッチングに要する時間を短縮し得るため、さらなる基板の生産効率の向上を図ることができる。 In this way, it becomes possible to etch the end face of the substrate with a fresh etchant at all times, and the time required for the etching can be shortened, so that the production efficiency of the substrate can be further improved.
 上記の方法において、エッチング液は、フッ酸又はフッ化水素酸アンモニウムを主成分とするものであることが好ましい。 In the above method, it is preferable that the etching solution is mainly composed of hydrofluoric acid or ammonium hydrofluoride.
 このようにすれば、エッチングに要する時間を好適に低減することができる。このため、より基板の生産効率の向上を図ることが可能となる。 In this way, the time required for etching can be suitably reduced. For this reason, it is possible to further improve the production efficiency of the substrate.
 以上のように、本発明によれば、ガラス基板にエッチングを施すに際して、基板の品質の低下を抑制すると共に、生産効率の向上を図ることが可能となる。 As described above, according to the present invention, when etching is performed on a glass substrate, it is possible to suppress degradation of the quality of the substrate and improve production efficiency.
本発明の第一実施形態に係るガラス基板のエッチング方法に使用するエッチング装置を示す平面図である。It is a top view which shows the etching apparatus used for the etching method of the glass substrate which concerns on 1st embodiment of this invention. 本発明の第一実施形態に係るガラス基板のエッチング方法に使用するエッチング装置を示す断面図である。It is sectional drawing which shows the etching apparatus used for the etching method of the glass substrate which concerns on 1st embodiment of this invention. 本発明の第一実施形態に係るガラス基板のエッチング方法を示す側面図である。It is a side view which shows the etching method of the glass substrate which concerns on 1st embodiment of this invention. 本発明の第二実施形態に係るガラス基板のエッチング方法を示す断面図である。It is sectional drawing which shows the etching method of the glass substrate which concerns on 2nd embodiment of this invention. 本発明の第三実施形態に係るガラス基板のエッチング方法を示す断面図である。It is sectional drawing which shows the etching method of the glass substrate which concerns on 3rd embodiment of this invention. 本発明の第四実施形態に係るガラス基板のエッチング方法を示す断面図である。It is sectional drawing which shows the etching method of the glass substrate which concerns on 4th embodiment of this invention. 本発明の第五実施形態に係るガラス基板のエッチング方法を示す断面図である。It is sectional drawing which shows the etching method of the glass substrate which concerns on 5th embodiment of this invention. 本発明の第六実施形態に係るガラス基板のエッチング方法に使用するエッチング装置を示す斜視図である。It is a perspective view which shows the etching apparatus used for the etching method of the glass substrate which concerns on 6th embodiment of this invention.
 以下、本発明の実施形態について添付の図面に基づいて説明する。図1は、本発明の第一実施形態に係るガラス基板のエッチング方法に使用するエッチング装置を示す平面図であり、図2は、図1のA-A断面図である。 Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a plan view showing an etching apparatus used in the glass substrate etching method according to the first embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line AA of FIG.
 これらの各図に示すように、エッチング装置1は、ガラス基板G(以下、単に基板Gという)を縦方向に搬送する搬送手段である複数の搬送ローラーR1と、基板Gにエッチングを施すエッチング液Lを収容する一対の樋状容器Tと、基板Gの端面Gaを支持する端面支持体である複数の端面支持ローラーR2とで構成される。 As shown in each of these drawings, the etching apparatus 1 includes a plurality of transport rollers R1 which are transport means for transporting a glass substrate G (hereinafter simply referred to as a substrate G) in the vertical direction, and an etching solution for etching the substrate G. It is comprised with a pair of bowl-shaped container T which accommodates L, and several end surface support roller R2 which is an end surface support body which supports the end surface Ga of the board | substrate G. As shown in FIG.
 複数の搬送ローラーR1は、基板Gの中央部Gcに沿って一直線に備えられており、基板Gの横方向(幅方向)における中央部Gcを支持すると共に、図示しない駆動機構の動作により回転することによって、複数の基板GをV方向(縦方向)に連続的に搬送することが可能である。また、これら搬送ローラーR1の基板Gとの当接面は、曲面に形成されている。 The plurality of transport rollers R1 are provided in a straight line along the central portion Gc of the substrate G, support the central portion Gc in the lateral direction (width direction) of the substrate G, and rotate by the operation of a driving mechanism (not shown). Thus, it is possible to continuously transport the plurality of substrates G in the V direction (vertical direction). Further, the contact surface of the transport roller R1 with the substrate G is formed in a curved surface.
 一対の樋状容器Tは、複数の搬送ローラーR1から横方向に平行に離間して備えられると共に、上方に向かって開口している。また、その高さ位置は、搬送ローラーR1と比べて下方に位置している。さらに、樋状容器T内では、V方向に向かってフッ化水素酸アンモニウムを主成分とするエッチング液Lが流れている。 The pair of bowl-shaped containers T are provided to be spaced apart from the plurality of transport rollers R1 in parallel in the lateral direction and open upward. Moreover, the height position is located below compared with the conveyance roller R1. Further, in the bowl-shaped container T, an etching solution L containing ammonium hydrofluoride as a main component flows in the V direction.
 端面支持ローラーR2は、樋状容器Tの側壁に取り付けられた軸を介して、樋状容器T内で回転すると共に、その一部が樋状容器T内に収容されるエッチング液Lに浸漬している。また、基板Gの端面Gaを支持する円錐状の支持面R2aが形成されている。この支持面R2aは、端面支持ローラーR2の内側から外側に向かって漸次拡径している。 The end surface support roller R2 rotates in the bowl-shaped container T via a shaft attached to the side wall of the bowl-shaped container T, and a part thereof is immersed in the etching solution L accommodated in the bowl-shaped container T. ing. Further, a conical support surface R2a that supports the end face Ga of the substrate G is formed. The support surface R2a gradually increases in diameter from the inner side to the outer side of the end surface support roller R2.
 次に、上記エッチング装置1を用いたガラス基板のエッチング方法を、図1に示すB方向からエッチング装置1を視た図である図3に基づいて説明する。このガラス基板のエッチング方法は、図1~図3においてクロスハッチングで示す部位、つまり基板Gの端面Gaと端面Gaに連なる表裏面の縁部Gbとに連続的にエッチングを施すものである。なお、図3において、搬送ローラーR1の図示は省略している。また、基板Gは、複数枚が連続してV方向に搬送される。 Next, a glass substrate etching method using the etching apparatus 1 will be described with reference to FIG. 3, which is a view of the etching apparatus 1 viewed from the direction B shown in FIG. In this glass substrate etching method, the portion indicated by cross-hatching in FIGS. 1 to 3, that is, the end surface Ga of the substrate G and the edge portion Gb of the front and back surfaces connected to the end surface Ga are continuously etched. In FIG. 3, the conveyance roller R1 is not shown. A plurality of substrates G are continuously conveyed in the V direction.
 搬送ローラーR1によって基板GがV方向に搬送されると、図3に示すように、基板Gの端面Gaを支持する端面支持ローラーR2が、端面Gaと支持面R2aとの摩擦によって同図に示すW方向に回転(空転)する。このため、支持面R2aは、端面支持ローラーR2の一部がエッチング液Lに浸漬していることによって、端面支持ローラーR2の回転に伴い、エッチング液Lへの侵入とエッチング液Lからの脱出とを繰り返す。これにより、端面支持ローラーR2は基板GをV方向に搬送しつつ、支持面R2aに付着したエッチング液Lによって基板Gの端面Gaと端面Gaに連なる縁部Gbとにエッチングを施す。 When the substrate G is transported in the V direction by the transport roller R1, the end surface support roller R2 that supports the end surface Ga of the substrate G is shown in FIG. 3 due to friction between the end surface Ga and the support surface R2a. Rotate in the W direction (idle). For this reason, the support surface R2a is configured such that a part of the end surface support roller R2 is immersed in the etching liquid L, and the intrusion into the etching liquid L and escape from the etching liquid L with the rotation of the end surface support roller R2. repeat. Thereby, the end surface support roller R2 etches the end surface Ga of the substrate G and the edge portion Gb connected to the end surface Ga by the etching liquid L attached to the support surface R2a while transporting the substrate G in the V direction.
 このような方法によれば、基板Gの横方向における中央部Gcと端面Gaのみが搬送ローラーR1と端面支持ローラーR2とによって支持される状態となる。このため、基板Gの内、搬送ローラーR1から横方向に食み出した部位に、擦り傷等が生じる可能性を可及的に低減することができ、基板Gの品質低下を効果的に抑制し得る状態でエッチングを施すことが可能となる。 According to such a method, only the central portion Gc and the end surface Ga in the lateral direction of the substrate G are supported by the transport roller R1 and the end surface support roller R2. For this reason, it is possible to reduce as much as possible the possibility of scratches or the like occurring in the portion of the substrate G that protrudes laterally from the transport roller R1, and effectively suppresses the degradation of the quality of the substrate G. Etching can be performed in the obtained state.
 また、搬送ローラーR1から横方向に食み出した部位は、重力によって下方に撓んだ状態にあるため、基板Gの端面Gaや端面Gaに連なる縁部Gbから基板Gのエッチングの対象ではない部位に向かって、エッチング液Lが流出する恐れがなくなる。これにより、基板Gを乾燥する際に、基板Gの切断時に生じたガラス粉等がパーティクルとして基板Gに残存し、基板Gが汚染されるという事態も適切に回避することができる。さらに、端面支持ローラーR2の支持面R2aの周速度と基板Gの端面Gaの搬送速度との相対速度が略ゼロとなるため、両者間の摺動を可及的に防止することが可能となり、基板Gの端面Gaに擦り傷等が発生するという不具合も起こりにくくなる。従って、さらなる基板Gの品質低下の抑制を図ることが可能となる。 Further, since the portion protruding laterally from the transport roller R1 is bent downward due to gravity, it is not an object of etching the substrate G from the end face Ga of the substrate G or the edge portion Gb connected to the end face Ga. There is no risk of the etchant L flowing out toward the part. As a result, when the substrate G is dried, it is possible to appropriately avoid a situation in which glass powder or the like generated when the substrate G is cut remains as particles on the substrate G and the substrate G is contaminated. Furthermore, since the relative speed between the peripheral speed of the support surface R2a of the end surface support roller R2 and the transport speed of the end surface Ga of the substrate G becomes substantially zero, it becomes possible to prevent sliding between the two as much as possible. The problem that scratches or the like occur on the end face Ga of the substrate G is less likely to occur. Therefore, it is possible to further suppress the quality deterioration of the substrate G.
 加えて、基板Gにおける一対の端面Gaと縁部Gbに対して、同時にエッチングを施すことができるため、基板Gの生産効率を向上させることも可能となる。また、基板Gの端面Gaが端面支持ローラーR2によって支持されることにより、基板Gの横方向移動が規制され得ることになるため、基板Gを安定的に搬送することができる。さらに、エッチング液Lが樋状容器T内に収容されていることにより、不要に多量のエッチング液Lを使用する必要がなくなるため、生産コストの低廉化を図ることも可能となる。 In addition, since the pair of end faces Ga and edge Gb in the substrate G can be etched simultaneously, the production efficiency of the substrate G can be improved. Further, since the end surface Ga of the substrate G is supported by the end surface support roller R2, the lateral movement of the substrate G can be restricted, so that the substrate G can be transported stably. Further, since the etching solution L is contained in the bowl-shaped container T, it is not necessary to use an unnecessarily large amount of the etching solution L, so that the production cost can be reduced.
 図4は、本発明の第二実施形態に係るガラス基板のエッチング方法に使用するエッチング装置1を示す断面図である。なお、図4において、上記第一実施形態に係るガラス基板のエッチング方法に使用するエッチング装置1と共通の構成要素については、同一の符号を付すことにより重複する説明を省略する。また、後述する第三実施形態~第六実施形態についても同様である。 FIG. 4 is a cross-sectional view showing an etching apparatus 1 used in the glass substrate etching method according to the second embodiment of the present invention. In FIG. 4, the same components as those in the etching apparatus 1 used in the glass substrate etching method according to the first embodiment are denoted by the same reference numerals, and redundant description is omitted. The same applies to third to sixth embodiments described later.
 この第二実施形態に係るガラス基板のエッチング方法に使用するエッチング装置1が、上述の第一実施形態に係るガラス基板のエッチング方法に使用するエッチング装置1と相違している点は、端面支持体として端面支持ローラーR2ではなく、エッチング治具Sを使用している点と、エッチング治具Sの支持面Saに対して、エッチング液Lを滴下する図示しないエッチング液供給源が備えられている点である。 The difference between the etching apparatus 1 used for the glass substrate etching method according to the second embodiment and the etching apparatus 1 used for the glass substrate etching method according to the first embodiment described above is that the end face support The etching jig S is used instead of the end support roller R2, and the etching liquid supply source (not shown) for dropping the etching liquid L on the support surface Sa of the etching jig S is provided. It is.
 このエッチング装置1を使用したガラス基板のエッチング方法によれば、エッチング治具Sの支持面Saにエッチング液Lの膜を形成することができ、基板Gの端面Gaと縁部Gbとに当該膜を通過させ、エッチング液Lに浸すことで、端面Gaと縁部Gbとにエッチングを施すことが可能となる。 According to the glass substrate etching method using this etching apparatus 1, a film of the etchant L can be formed on the support surface Sa of the etching jig S, and the film is formed on the end surface Ga and the edge Gb of the substrate G. Can be etched, and the end face Ga and the edge Gb can be etched.
 図5は、本発明の第三実施形態に係るガラス基板のエッチング方法に使用するエッチング装置1を示す断面図である。 FIG. 5 is a cross-sectional view showing an etching apparatus 1 used in the glass substrate etching method according to the third embodiment of the present invention.
 この第三実施形態に係るガラス基板のエッチング方法に使用するエッチング装置1が、上述の第一実施形態に係るガラス基板のエッチング方法に使用するエッチング装置1と相違している点は、端面支持体として端面支持ローラーR2ではなく、板状体Hを使用している点である。この板状体Hは、多孔質材料で形成されている。 The difference between the etching apparatus 1 used for the glass substrate etching method according to the third embodiment and the etching apparatus 1 used for the glass substrate etching method according to the first embodiment described above is the end face support. As described above, the plate-like body H is used instead of the end face support roller R2. This plate-like body H is formed of a porous material.
 このエッチング装置1を使用したガラス基板のエッチング方法によれば、板状体Hが多孔質材料で形成されていることにより、板状体H内に含浸されたエッチング液Lは、毛細管現象によって板状体H内を上昇する。この上昇したエッチング液Lが板状体Hの支持面Haから沁みだすことによって、基板Gの端面Gaと縁部Gbとが浸され、エッチングを施すことができる。 According to the etching method of the glass substrate using this etching apparatus 1, since the plate-like body H is formed of a porous material, the etching solution L impregnated in the plate-like body H is removed by a capillary phenomenon. Ascend in the body H. The rising etching solution L oozes from the support surface Ha of the plate-like body H, so that the end face Ga and the edge Gb of the substrate G are immersed and etching can be performed.
 ここで、上記の第一実施形態~第三実施形態に係るガラス基板のエッチング方法において、エッチングが施される基板Gの厚みは0.7mm以下であることが好ましく、より好ましくは0.5mm以下であり、最も好ましくは0.3mm以下である。また、基板Gの横方向の長さは、1500mm以上であることが好ましい。 Here, in the glass substrate etching method according to the first to third embodiments, the thickness of the substrate G to be etched is preferably 0.7 mm or less, more preferably 0.5 mm or less. And most preferably 0.3 mm or less. The length of the substrate G in the lateral direction is preferably 1500 mm or more.
 図6は、本発明の第四実施形態に係るガラス基板のエッチング方法に使用するエッチング装置1を示す断面図である。 FIG. 6 is a cross-sectional view showing an etching apparatus 1 used in the glass substrate etching method according to the fourth embodiment of the present invention.
 この第四実施形態に係るガラス基板のエッチング方法に使用するエッチング装置1が、上述の第一実施形態に係るガラス基板のエッチング方法に使用するエッチング装置1と相違している点は、端面支持ローラーR2が備えられていない点と、搬送ローラーR1と基板Gの端面Gaとの間に、基板Gを支持する複数の補助支持ローラーR3を備えている点である。この補助支持ローラーR3は、端面Gaの側に備えられたもの程、その径が小さくなっており、搬送ローラーR1と平行に離間して備えられている。 The difference between the etching apparatus 1 used for the glass substrate etching method according to the fourth embodiment and the etching apparatus 1 used for the glass substrate etching method according to the first embodiment described above is the end face support roller. The point that R2 is not provided and the point that a plurality of auxiliary support rollers R3 that support the substrate G are provided between the transport roller R1 and the end face Ga of the substrate G. The auxiliary support roller R3 has a smaller diameter as it is provided on the end face Ga side, and is provided in parallel with the transport roller R1.
 このエッチング装置1を使用したガラス基板のエッチング方法は、特に薄い基板Gにエッチングを施すものであり、厚みが0.1mm以下の基板Gに用いることが好ましい。このような方法によれば、薄い基板Gを搬送する場合であっても、基板Gが過度に撓むことを抑制し得ると共に、搬送ローラーR1上に載置された基板Gの中央部Gcにおいて、基板Gの曲率の増大に起因する大きな引張応力の発生を防止することができる。 The glass substrate etching method using this etching apparatus 1 is an etching method for a particularly thin substrate G, and is preferably used for a substrate G having a thickness of 0.1 mm or less. According to such a method, even when the thin substrate G is transported, it is possible to suppress the substrate G from being bent excessively, and at the central portion Gc of the substrate G placed on the transport roller R1. The generation of a large tensile stress due to the increase in the curvature of the substrate G can be prevented.
 図7は、本発明の第五実施形態に係るガラス基板のエッチング方法に使用するエッチング装置1を示す断面図である。 FIG. 7 is a sectional view showing an etching apparatus 1 used in the glass substrate etching method according to the fifth embodiment of the present invention.
 この第五実施形態に係るガラス基板のエッチング方法に使用するエッチング装置1が、上述の第一実施形態に係るガラス基板のエッチング方法に使用するエッチング装置1と相違している点は、端面支持ローラーR2が備えられていない点と、搬送ローラーR1と基板Gの端面Gaとの間に、基板Gを下方に押圧する押圧部材である押圧ローラーR4を備えている点である。この押圧ローラーR4は、同図に示すZ方向に沿って上下動することが可能となっている。 The difference between the etching apparatus 1 used for the glass substrate etching method according to the fifth embodiment and the etching apparatus 1 used for the glass substrate etching method according to the first embodiment described above is that the end face support roller Between the point where R2 is not provided and between the transport roller R1 and the end face Ga of the substrate G, a pressing roller R4 which is a pressing member for pressing the substrate G downward is provided. The pressing roller R4 can move up and down along the Z direction shown in FIG.
 このエッチング装置1を使用したガラス基板のエッチング方法は、厚みの大きい基板Gにエッチングを施すものであり、特に基板Gの厚みと基板Gの横方向の長さとが(基板Gの横方向長さ/基板Gの厚み)<2000の関係にあるときに用いることが好ましい。このような方法によれば、厚みの大きい基板Gにエッチングを施す場合であっても、良好に基板Gの端面Gaと縁部Gbとを下方に撓ませることができる。 The glass substrate etching method using this etching apparatus 1 is to etch a thick substrate G, and in particular, the thickness of the substrate G and the lateral length of the substrate G (the lateral length of the substrate G). / Thickness of the substrate G) <2000 is preferably used. According to such a method, even when etching is performed on the thick substrate G, the end face Ga and the edge portion Gb of the substrate G can be favorably bent downward.
 図8は、本発明の第六実施形態に係るガラス基板のエッチング方法に使用するエッチング装置2を示す斜視図である。 FIG. 8 is a perspective view showing an etching apparatus 2 used in the glass substrate etching method according to the sixth embodiment of the present invention.
 エッチング装置2は、基板Gの搬送手段である台車10と、図示しない上記第一~第五実施形態に係るガラス基板のエッチング方法に使用するエッチング装置1と同一の樋状容器Tとを備えている。 The etching apparatus 2 includes a carriage 10 that is a means for transporting the substrate G, and a bowl-like container T that is the same as the etching apparatus 1 used in the glass substrate etching method according to the first to fifth embodiments (not shown). Yes.
 台車10には、基板Gの中央部Gcを支持する支持部Dが形成されている。また、支持部Dにおける基板Gとの当接面は、曲面に形成されると共に、複数の通気孔Pが備えられており、図示しない負圧源によって負圧を作用させることにより、基板Gを吸着保持することが可能となっている。 The carriage 10 is formed with a support portion D that supports the central portion Gc of the substrate G. Further, the contact surface of the support portion D with the substrate G is formed in a curved surface and is provided with a plurality of vent holes P. By applying a negative pressure by a negative pressure source (not shown), the substrate G is It can be held by suction.
 このエッチング装置2を使用したガラス基板のエッチング方法によれば、支持部Dにおける基板Gとの当接面が曲面に形成されていることに起因して、図示しない負圧源によって基板Gに作用する負圧の大小を調節することにより、基板Gの撓み具合を調節することが可能となる。これにより、様々な厚みの基板Gに対して、このエッチング装置2を用いてエッチングを施すことができる。 According to the etching method of the glass substrate using this etching apparatus 2, the contact surface with the substrate G in the support portion D is formed in a curved surface, so that it acts on the substrate G by a negative pressure source (not shown). By adjusting the magnitude of the negative pressure, it is possible to adjust the degree of bending of the substrate G. Thereby, it is possible to etch the substrate G having various thicknesses using the etching apparatus 2.
 ここで、上記の第一実施形態~第六実施形態において、エッチングが施される基板Gの縁部Gbの幅は、1.0mm以下であることが好ましい。 Here, in the above first to sixth embodiments, the width of the edge Gb of the substrate G to be etched is preferably 1.0 mm or less.
 また、本発明に係るガラス基板のエッチング方法は、上記の各実施形態に係るガラス基板のエッチング方法に限定されるものではない。上記の第一実施形態~第五実施形態においては、基板Gを搬送する搬送手段として、搬送ローラーR1を使用しているが、第六実施形態に示すような台車10を使用してもよいし、台車10における支持部Dに形成された複数の通気孔Pと、通気孔Pに負圧を作用させる負圧源とを備えた搬送コンベヤ等を使用してもよい。また、樋状容器Tは、上記実施形態に示したように基板Gの縦方向長さよりも長い必要はなく、基板Gの縦方向長さの半分程度の長さを有していれば十分である。さらに、樋状容器Tは必ずしも設ける必要はなく、エッチングの対象となる一対の端面Gaと縁部Gbの双方を、基板Gの横方向長さよりも長い横幅を有する一つの容器を用いて、当該容器に収容されたエッチング液Lに浸すようにしてもよい。さらに、樋状容器T内を流れるエッチング液Lの流れの向きは、第一実施形態で説明したV方向と逆向きであってもよい。また、エッチング液Lとしては、上記実施形態に使用しているフッ化水素酸アンモニウムを主成分としたもの以外にも、フッ酸や塩酸、水酸化ナトリウム等を使用することができる。さらに、端面支持ローラーR2、エッチング治具S、板状体Hの形状も基板Gの撓み具合等を勘案して適宜変更してよい。加えて、上記の各実施形態では、エッチングが施される基板Gの縦方向長さが横方向長さと比較して長くなっているが、この限りではなく、横方向長さが縦方向長さより長くなっていてもよい。 The glass substrate etching method according to the present invention is not limited to the glass substrate etching method according to each of the above embodiments. In the first to fifth embodiments, the transport roller R1 is used as the transport means for transporting the substrate G. However, a carriage 10 as shown in the sixth embodiment may be used. A conveyor or the like including a plurality of vent holes P formed in the support portion D of the carriage 10 and a negative pressure source that applies a negative pressure to the vent holes P may be used. Moreover, the bowl-shaped container T does not need to be longer than the vertical length of the substrate G as shown in the above embodiment, and it is sufficient if it has a length about half the vertical length of the substrate G. is there. Furthermore, the bowl-shaped container T is not necessarily provided, and both the pair of end faces Ga and the edge Gb to be etched are used by using a single container having a lateral width longer than the lateral length of the substrate G. You may make it soak in the etching liquid L accommodated in the container. Furthermore, the direction of the flow of the etching solution L flowing in the bowl-shaped container T may be opposite to the V direction described in the first embodiment. As the etching solution L, hydrofluoric acid, hydrochloric acid, sodium hydroxide, or the like can be used in addition to the main component of ammonium hydrofluoride used in the above embodiment. Further, the shapes of the end surface support roller R2, the etching jig S, and the plate-like body H may be appropriately changed in consideration of the bending state of the substrate G and the like. In addition, in each of the above embodiments, the length in the vertical direction of the substrate G to be etched is longer than the length in the horizontal direction. However, the length is not limited to this, and the length in the horizontal direction is longer than the length in the vertical direction. It may be longer.
 1      エッチング装置
 2      エッチング装置
 R1     搬送ローラー
 R2     端面支持ローラー
 R2a    支持面
 G      ガラス基板
 Ga     基板の端面
 Gb     基板の縁部
 Gc     基板の中央部
 T      樋状容器
 L      エッチング液
 V      基板の搬送方向
 W      端面支持ローラーの回転方向
 S      エッチング治具
 Sa     支持面
 Y      エッチング液の滴下方向
 H      板状体
 Ha     支持面
 R3     補助支持ローラー
 R4     押圧ローラー
 Z      押圧ローラーの移動方向
 10     台車
 D      支持部
 P      通気孔
DESCRIPTION OF SYMBOLS 1 Etching apparatus 2 Etching apparatus R1 Conveyance roller R2 End surface support roller R2a Support surface G Glass substrate Ga End surface of G substrate Gb Edge of substrate Gc Central part of substrate T Bowl-shaped container L Etching solution V Transport direction of substrate W End surface support roller Rotation direction S Etching jig Sa Support surface Y Etching liquid dropping direction H Plate body Ha Support surface R3 Auxiliary support roller R4 Press roller Z Direction of movement of the press roller 10 Dolly D Support part P Vent

Claims (12)

  1.  ガラス基板の縦方向に平行な一対の端面及びこれらの端面に連なる表裏面の縁部を、エッチング液に浸してエッチングを施すガラス基板のエッチング方法であって、
     前記ガラス基板の横方向における少なくとも中央部を前記縦方向に延びる支持部材上に載置し、該支持部材から前記横方向の両側に食み出し、且つそれら食み出し部が下方に撓んだ状態での前記一対の端面及び縁部を、前記エッチング液に浸すことを特徴とするガラス基板のエッチング方法。
    A glass substrate etching method in which etching is performed by immersing a pair of end faces parallel to the longitudinal direction of the glass substrate and edges of front and back surfaces connected to these end faces in an etching solution,
    At least a central portion in the horizontal direction of the glass substrate is placed on the support member extending in the vertical direction, protruding from the support member to both sides in the horizontal direction, and the protruding portions are bent downward. A glass substrate etching method, wherein the pair of end faces and edges in a state are immersed in the etching solution.
  2.  前記支持部材は、ガラス基板の横方向における中央部のみを下方より支持するものであることを特徴とする請求項1に記載のガラス基板のエッチング方法。 The method for etching a glass substrate according to claim 1, wherein the supporting member supports only the central portion in the lateral direction of the glass substrate from below.
  3.  前記支持部材は、前記ガラス基板を前記縦方向に搬送する搬送手段であることを特徴とする請求項1又は2に記載のガラス基板のエッチング方法。 The method for etching a glass substrate according to claim 1 or 2, wherein the supporting member is a conveying means for conveying the glass substrate in the longitudinal direction.
  4.  前記ガラス基板の端面を支持する支持面を有する端面支持体を設け、前記支持面に前記ガラス基板の端面を支持させた状態で、前記ガラス基板の端面及び縁部をエッチング液に浸すことを特徴とする請求項1~3のいずれかに記載のガラス基板のエッチング方法。 An end surface support having a support surface for supporting the end surface of the glass substrate is provided, and the end surface and the edge of the glass substrate are immersed in an etching solution in a state where the end surface of the glass substrate is supported on the support surface. The method for etching a glass substrate according to any one of claims 1 to 3.
  5.  前記端面支持体の支持面に、エッチング液を滴下することにより、前記ガラス基板の端面及び縁部をエッチング液に浸すことを特徴とする請求項4に記載のガラス基板のエッチング方法。 The glass substrate etching method according to claim 4, wherein the end surface and the edge of the glass substrate are immersed in an etching solution by dropping an etching solution onto the supporting surface of the end surface support.
  6.  前記端面支持体を多孔質材料で形成し且つその一部を前記エッチング液に浸漬させることにより、前記ガラス基板の端面及び縁部をエッチング液に浸すことを特徴とする請求項4に記載のガラス基板のエッチング方法。 5. The glass according to claim 4, wherein the end face support is formed of a porous material and a part thereof is immersed in the etching solution, whereby the end surface and the edge of the glass substrate are immersed in the etching solution. Substrate etching method.
  7.  前記端面支持体は、その一部が前記エッチング液に浸漬した端面支持ローラーであることを特徴とする請求項4に記載のガラス基板のエッチング方法。 The glass substrate etching method according to claim 4, wherein the end surface support is an end surface support roller partly immersed in the etching solution.
  8.  前記搬送手段と前記ガラス基板の端面との間に、前記ガラス基板を支持する複数の補助支持ローラーを設けると共に、該複数の補助支持ローラーは、前記端面の側にその配設位置が移行するに連れて、その径が小さくされていることを特徴とする請求項3~7のいずれかに記載のガラス基板のエッチング方法。 A plurality of auxiliary support rollers for supporting the glass substrate are provided between the conveying means and the end surface of the glass substrate, and the arrangement positions of the plurality of auxiliary support rollers shift to the end surface side. The glass substrate etching method according to any one of claims 3 to 7, wherein the diameter of the glass substrate is reduced accordingly.
  9.  前記搬送手段と前記ガラス基板の端面との間に、前記ガラス基板を下方に押圧する押圧部材を設けたことを特徴とする請求項3~8のいずれかに記載のガラス基板のエッチング方法。 The method for etching a glass substrate according to any one of claims 3 to 8, wherein a pressing member for pressing the glass substrate downward is provided between the conveying means and an end surface of the glass substrate.
  10.  前記エッチング液は、前記縦方向に延びる一対の樋状容器に収容されていることを特徴とする請求項1~9のいずれかに記載のガラス基板のエッチング方法。 10. The method for etching a glass substrate according to claim 1, wherein the etching solution is contained in a pair of bowl-shaped containers extending in the longitudinal direction.
  11.  前記エッチング液は、前記樋状容器の一端から供給し、前記樋状容器の他端から排出することを特徴とする請求項10に記載のガラス基板のエッチング方法。 The method for etching a glass substrate according to claim 10, wherein the etching solution is supplied from one end of the bowl-shaped container and discharged from the other end of the bowl-shaped container.
  12.  前記エッチング液は、フッ酸又はフッ化水素酸アンモニウムを主成分とするものであることを特徴とする請求項1~11のいずれかに記載のガラス基板のエッチング方法。 12. The method for etching a glass substrate according to claim 1, wherein the etching solution contains hydrofluoric acid or ammonium hydrofluoride as a main component.
PCT/JP2012/083556 2011-12-28 2012-12-26 Etching method for glass substrate WO2013099893A1 (en)

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