WO2013086730A1 - 曝光装置及曝光方法 - Google Patents

曝光装置及曝光方法 Download PDF

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Publication number
WO2013086730A1
WO2013086730A1 PCT/CN2011/084102 CN2011084102W WO2013086730A1 WO 2013086730 A1 WO2013086730 A1 WO 2013086730A1 CN 2011084102 W CN2011084102 W CN 2011084102W WO 2013086730 A1 WO2013086730 A1 WO 2013086730A1
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Prior art keywords
photoresist layer
exposure
light
photomask
transparent substrate
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PCT/CN2011/084102
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English (en)
French (fr)
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许哲豪
施明宏
薛景峰
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深圳市华星光电技术有限公司
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Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US13/381,350 priority Critical patent/US9383650B2/en
Publication of WO2013086730A1 publication Critical patent/WO2013086730A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning

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  • the present invention relates to the field of exposure technology, and in particular to an exposure apparatus and an exposure method.
  • Photo-lithography has been widely used in the manufacturing of various electronic products.
  • Photolithography can be used to expose photoresist (PR) to form different patterns, but when the pattern of photoresist patterns Distance When the space is small, the light transmittance is small, and some of the photoresists are not exposed and connected together. Therefore, the pattern formed after photolithography cannot conform to the preset pattern, and the performance of the electronic product is greatly limited. which performed.
  • the invention provides an exposure apparatus and an exposure method for reducing the line pitch of a photoresist layer pattern.
  • the main object of the present invention is to provide an exposure apparatus for exposing a photoresist layer on a transparent substrate, the exposure apparatus comprising:
  • An exposure light source for providing light to the photoresist layer, wherein light provided by the exposure light source passes through the photomask to reach the photoresist layer;
  • a reflective plate disposed on an opposite side of the photoresist layer for reflecting light passing through the photoresist layer and the transparent substrate back to the photoresist layer.
  • Another object of the present invention is to provide an exposure method for exposing a photoresist layer on a transparent substrate, the exposure method comprising the steps of: providing light to the photoresist layer by using an exposure light source, wherein The light provided by the exposure light source passes through the photomask to reach the photoresist layer; and a reflective plate is used to reflect light passing through the photoresist layer and the transparent substrate back to the light Resistance layer.
  • the transparent substrate is carried on the reflector.
  • the photomask includes a light transmissive opening having a width of less than 3 um.
  • the width of the light transmissive opening is equal to or less than 2 um.
  • the reflective surface of the reflector is a flat surface.
  • the reflector has a plurality of convex structures.
  • the reflector has a plurality of concave structures.
  • the reflective plate is parallel to the photoresist layer on the light transmissive substrate when performing exposure.
  • the exposure apparatus and the exposure method of the present invention it is possible to ensure that the portion of the photoresist layer illuminated by the light is completely exposed, and it is possible to avoid a situation in which the predetermined pattern line pitch is too small or the aspect ratio is too high to be sufficiently exposed. Therefore, with the exposure apparatus and the exposure method of the present invention, the desired pattern line pitch can be reduced to improve the performance of the electronic device.
  • Figure 1 shows a schematic view of an exposure apparatus in accordance with a first embodiment of the present invention
  • FIG. 2 shows a schematic view of a patterned photoresist layer in accordance with a first embodiment of the present invention
  • Figure 3 is a schematic view showing a post-etching transparent electrode layer in accordance with a first embodiment of the present invention
  • Figure 4 shows a schematic view of an exposure apparatus in accordance with a second embodiment of the present invention.
  • Fig. 5 shows a schematic view of an exposure apparatus in accordance with a third embodiment of the present invention.
  • the exposure apparatus 100 of the present embodiment is used for exposing the photoresist layer 102 on the transparent substrate 101 to pattern the photoresist layer 102.
  • the light-transmitting substrate 101 is, for example, a light-transmissive glass substrate or a flexible substrate.
  • the material of the photoresist layer 102 can be positive photoresist (Positive Resist) material or negative photoresist (Negative Resist) material.
  • the photoresist layer 102 and the transparent substrate 101 may have one or more structures 103, and the multilayer structure 103 is preferably a light transmitting structure to ensure that the light can be blocked by light.
  • the layer 102 penetrates into the light transmissive substrate 101.
  • the exposure apparatus 100 of the present embodiment may include an exposure light source 110, a photomask 120, and a reflection plate 130.
  • the exposure light source 110 is a photoresist layer 102 for providing exposure light onto the transparent substrate 101.
  • the photomask 120 is disposed between the exposure light source 110 and the photoresist layer 102 on the transparent substrate 101 for allowing partial portions. Light passes through to achieve the effect of patterning the photoresist layer 102.
  • the reflecting plate 130 is configured to reflect the light passing through the photoresist layer 102 and the transparent substrate 101 back to the photoresist layer 101 to increase the exposure amount of the photoresist layer 101 so that the portion of the photoresist layer 102 to be patterned is formed. It can be completely exposed to ensure the formation of a predetermined pattern.
  • the exposure light source 110 of the present embodiment is, for example, a metal halide lamp. Lamp), mercury lamp, fluorescent lamp, UV lamp or laser source to emit exposure light.
  • the exposure light emitted by the exposure light source 110 is preferably ultraviolet light or light having a wavelength smaller than ultraviolet light (such as a laser).
  • the exposure light source 110 can directly face the photoresist layer 102 on the transparent substrate 101 to directly illuminate the light to the photoresist layer 102.
  • the exposure light emitted by the exposure source 110 can be transmitted to the photoresist layer 102 through an optical system (not shown) composed of a plurality of lenses.
  • the photomask 120 of the present embodiment is disposed on one side (the upper side) of the photoresist layer 102 , and is located between the exposure light source 110 and the photoresist layer 102 on the transparent substrate 101 , and the photomask 120 .
  • the opaque pattern 121 and the light transmissive opening (or slit) 122 are included.
  • the material of the opaque pattern 121 is, for example, chrome for shielding a portion of the light emitted by the exposure light source 110.
  • the light-transmissive opening 122 is formed between the opaque patterns 121 for allowing a portion of light to pass therethrough to pattern the photoresist layer 102.
  • the photomask 120 can be disposed directly adjacent to the surface of the photoresist layer 102.
  • the width (eg, 2 um) of the transparent opening 122 of the photomask 120 can be substantially the same or close to the light received on the surface of the photoresist layer 102.
  • the width of the area W (such as 2um).
  • the exposure apparatus 100 may further include a projection reduction lens system (projection) Reduction lens
  • the photomask 120 is disposed between the photomask 120 and the photoresist layer 102 for projecting to the surface of the photoresist layer 102 according to a preset ratio through the photomask 120. At this time, the photomask 120 is transparent.
  • the width of the opening 122 (e.g., 10 um) may be much larger than the width W (e.g., 2 um) of the region of the light received on the surface of the photoresist layer 102.
  • the photomask 120 can be positioned opposite the photoresist layer 102 by an alignment device (not shown).
  • the reflective plate 130 of the present embodiment is disposed on the opposite side (the side below) of the photoresist layer 102 for reflecting light passing through the transparent substrate 101 so that the light is reflected back to the photoresist layer 102.
  • the exposure amount of the photoresist layer 102 can be increased to prevent the underlying portion of the photoresist layer 102 (the portion close to the transparent substrate 101) from being underexposed, thereby ensuring that the photoresist layer 102 is completely exposed, so that the exposure of the photoresist layer 102 is performed.
  • the rear pattern can accurately conform to the requirements of a predetermined pattern.
  • the reflective plate 130 is preferably substantially parallel to the photoresist layer 102 on the transparent substrate 101, so that the light passing through the transparent substrate 101 can be directly reflected back to the photoresist layer 102 by the reflective plate 130 to ensure The accuracy of the exposure pattern of the photoresist layer 102.
  • the reflector 130 has a high reflectivity material (highly Reflective Material), such as silver, aluminum, gold or white reflective paints (such as titanium dioxide) to reflect light.
  • the reflecting plate 130 can be integrally formed from such a high reflectivity material such as metal.
  • the high reflectivity material may be applied to a substrate (not shown) to form the reflective plate 130.
  • the reflective surface of the reflective plate 130 is a flat surface, that is, the reflective plate 130 can serve as a flat mirror.
  • the transparent substrate 101 when the exposure is performed, can be carried on the reflective plate 130. At this time, the bottom surface of the transparent substrate 101 can contact the reflective surface of the reflective plate 130.
  • a transparent carrier (not shown) may be disposed between the transparent substrate 101 and the reflective plate 130 for carrying the transparent substrate 101 and allowing light to pass therethrough.
  • the exposure method of the present embodiment may include the steps of: providing light to the photoresist layer 102 by using the exposure light source 110 for exposure, wherein the light provided by the exposure light source 110 passes through the photomask 120 .
  • the photoresist layer 102 is reached; and the light passing through the photoresist layer 102 and the transparent substrate 101 is reflected back to the photoresist layer 102 by the reflective plate 130.
  • the transparent substrate 101 may be a glass substrate, and the photoresist layer 102 and the transparent substrate 101 have a desire to be A patterned transparent electrode layer (such as an ITO layer) 103.
  • the exposure light source 110 can emit light to provide light to the photoresist layer 102, and the light of the exposure light source 110 can pass through the photomask 120 to reach the photoresist layer 102.
  • the light can pass through the photoresist layer 102, the transparent electrode layer 103, and the transparent substrate 101, and the light passing through the transparent substrate 101 can be reflected back to the photoresist layer 102 through the reflective plate 130 to increase the photoresist layer 102.
  • the amount of light received at the bottom ensures that the photoresist layer 102 can be sufficiently exposed to avoid a situation in which the bottom of the photoresist layer 102 is not sufficiently exposed due to the preset pattern line pitch being too small or the aspect ratio being too high.
  • FIG. 2 is a schematic view showing a patterned photoresist layer according to a first embodiment of the present invention
  • FIG. 3 is a schematic view showing a post-etching transparent electrode layer according to a first embodiment of the present invention.
  • FIG. 2 after exposure is performed, a portion of the photoresist layer 102 is removed by a developing step to pattern the photoresist layer 102.
  • the transparent electrode layer 103 not shielded by the patterned photoresist layer 102 is then removed by an etching step. Then, the patterned photoresist layer 102 is removed to obtain the patterned transparent electrode layer 103.
  • the line pitch of the preset pattern or the width of the light-transmitting opening 122 of the photomask 120 may be less than 3. Um, preferably less than or equal to 2 um.
  • the exposure apparatus 200 of the second embodiment may include an exposure light source 210, a photomask 220, and a reflection plate 230.
  • the photomask 220 is disposed between the exposure light source 210 and the photoresist layer 102 on the transparent substrate 101.
  • the reflective plate 230 is configured to reflect the light passing through the photoresist layer 102 and the transparent substrate 101 back to the photoresist layer 101. .
  • the reflection plate 230 of the second embodiment has a plurality of convex structures facing the light-transmitting substrate 101. Therefore, the plurality of reflective convex surfaces of the reflecting plate 230 can function as a convex mirror.
  • the exposure device 300 of the third embodiment may include an exposure light source 310, a photomask 320, and a reflection plate 330.
  • the photomask 320 is disposed between the exposure light source 310 and the photoresist layer 102 on the transparent substrate 101.
  • the reflective plate 330 is configured to reflect the light passing through the photoresist layer 102 and the transparent substrate 101 back to the photoresist layer 101. .
  • the reflection plate 330 of the third embodiment has a plurality of concave structures facing the light-transmitting substrate 101. Therefore, the plurality of reflective concave surfaces of the reflecting plate 330 can function as a concave mirror.
  • the exposure apparatus and the exposure method of the present invention it is ensured that the exposed portion of the photoresist layer can absorb sufficient exposure energy, and thus a pattern conforming to a predetermined requirement can be formed after the development step. Therefore, with the exposure apparatus and the exposure method of the present invention, the desired pattern line pitch can be reduced to improve the performance of the electronic device.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

提供一种曝光装置及曝光方法。曝光方法包括：利用曝光光源（110）来提供光线至光阻层（102）；以及利用反射板（130）将穿过光阻层（102）和透光基板（101）的光线反射回光阻层（102）。这种曝光装置及方法可缩小光阻层图案的线距。

Description

曝光装置及曝光方法 技术领域
本发明涉及一种曝光技术领域，特别是涉及一种曝光装置及曝光方法。
 背景技术
光刻技术(photo-lithography)已被广泛应用于各种电子产品的制程中，利用光刻技术可以对光阻(PR)曝光，以形成不同图案(pattern)，但是当光阻的图案的线距(line space)较小时，其光透过率较小，导致部分的光阻没有被曝开而连接在一起，因此，光刻后所形成的图案无法符合预设的图案，而大幅地限制电子产品的性能表现。
特别是，在目前的许多电子装置中，例如液晶显示装置，其需要不断减小图案的线距，以提升电子装置的性能。
故，有必要提供一种曝光装置及曝光方法，以解决现有技术所存在的问题。
 技术问题
本发明提供一种曝光装置及曝光方法，以缩小光阻层图案的线距。
 技术解决方案
本发明的主要目的在于提供一种曝光装置，用于对一透光基板上的光阻层进行曝光，所述曝光装置包括：
光掩模，设置于所述光阻层的一侧；
曝光光源，用于提供光线至所述光阻层，其中所述曝光光源所提供的光线是穿过所述光掩模来到达所述光阻层；以及
反射板，设置于所述光阻层的相对一侧，用于将穿过所述光阻层及所述透光基板的光线反射回所述光阻层。
本发明的另一目的在于提供一种曝光方法，用于对一透光基板上的光阻层进行曝光，所述曝光方法包括如下步骤：利用曝光光源来提供光线至所述光阻层，其中所述曝光光源所提供的光线是穿过所述光掩模来到达所述光阻层；以及利用反射板来将穿过所述光阻层及所述透光基板的光线反射回所述光阻层。
在本发明的一实施例中，当利用所述反射板来反射光线时，所述透光基板是承载于所述反射板上。
在本发明的一实施例中，所述光掩模包括透光开口，所述透光开口的宽度小于3 um。
在本发明的一实施例中，所述透光开口的宽度等于或小于2 um。
在本发明的一实施例中，所述反射板的反射表面为平坦表面。
在本发明的一实施例中，所述反射板具有多个凸面结构。
在本发明的一实施例中，所述反射板具有多个凹面结构。
在本发明的一实施例中，当进行曝光时，所述反射板是平行于所述透光基板上的所述光阻层。
 有益效果
通过本发明的曝光装置及曝光方法，可确保光阻层被光线照射的部分可完全曝光，避免因预设图案线距过小或深宽比过高而无法充分曝光的情形。因此，通过本发明的曝光装置及曝光方法，可缩小所期望的图案线距，以提升电子装置的性能。
 附图说明
图1显示依照本发明的第一实施例的曝光装置的示意图；
图2显示依照本发明的第一实施例的图案化后光阻层的示意图；
图3显示依照本发明的第一实施例的蚀刻后透明电极层的示意图；
图4显示依照本发明的第二实施例的曝光装置的示意图；以及
图5显示依照本发明的第三实施例的曝光装置的示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
在图中，结构相似的单元是以相同标号表示。
请参照图1，其显示依照本发明的第一实施例的曝光装置的示意图。本实施例的曝光装置100是用于透光基板101上的光阻层102进行曝光，以图案化此光阻层102。其中，透光基板101例如为可透光的玻璃基板或可挠性基板。光阻层102的材料可为正光阻(Positive Resist)材料或负光阻(Negative Resist)材料。值得注意的是，在进行曝光之前，光阻层102与透光基板101之间可具有一或多层结构103，而这一或多层结构103优选为透光结构，以确保光线可由光阻层102穿透至透光基板101。
如图1所示，本实施例的曝光装置100可包括曝光光源110、光掩模120及反射板130。曝光光源110是用于提供曝光光线至透光基板101上的光阻层102，光掩模120是设置于曝光光源110与透光基板101上的光阻层102之间，用于允许部分的光线通过，而达到图案化光阻层102的效果。反射板130是用于将穿过光阻层102及透光基板101的光线反射回光阻层101，以增加光阻层101的被曝光量，使得光阻层102中欲被图案化的部分可完全地曝光，以确保一预设图案的形成。
如图1所示，本实施的曝光光源110例如为金属卤素灯(metal halide lamp)、水银灯、荧光灯、UV灯管或激光光源，以发出曝光光线。曝光光源110所发出的曝光光线优选为紫外光，或者为波长小于紫外光的光线(如激光)。曝光光源110可直接面对于透光基板101上的光阻层102，以直接照射光线至光阻层102。在另一实施例中，曝光光源110所发出的曝光光线可通过多个透镜所组成的光学系统(未显示)来传送至光阻层102。
如图1所示，本实施的光掩模120是设置光阻层102的一侧(如上侧)，且位于曝光光源110与透光基板101上的光阻层102之间，光掩模120包括不透光图案121及透光开口(或狭缝)122。不透光图案121的材料例如为铬，用于遮蔽部分由曝光光源110所发出的光线。透光开口122是形成于不透光图案121之间，用于允许部分的光线通过，以图案化光阻层102。光掩模120可直接靠近于光阻层102的表面来设置，此时，光掩模120的透光开口122的宽度(如2um)可实质相同或接近于光阻层102的表面上所受光的区域的宽度W(如2um)。在另一实施例中，曝光装置100还可包括投影缩小透镜系统(projection reduction lens system)，其设置于光掩模120与光阻层102之间，用于将通过光掩模120依据预设比例来投影至光阻层102的表面，此时，光掩模120的透光开口122的宽度(如10um)可远大于光阻层102的表面上所受光的区域的宽度W(如2um)。再者，此光掩模120可通过对准装置(未显示)来对位于光阻层102。
如图1所示，本实施的反射板130是设置光阻层102的相对一侧(如下侧)，用于反射穿过透光基板101的光线，使得光线被反射回光阻层102，而可增加光阻层102的曝光量，避免光阻层102的底部(靠近透光基板101的部分)有曝光不足的情形，因而可确保光阻层102被完全曝光，使得光阻层102的曝光后图案可准确地符合一预设图案的要求。当进行曝光时，反射板130优选是实质平行于透光基板101上的光阻层102，使得穿过透光基板101的光线可直接被反射板130来全反射回光阻层102，以确保光阻层102的曝光图案的精确性。反射板130具有高反射率材料(highly reflective material)，例如银、铝、金或白色反射漆料(如二氧化钛)，以反射光线。反射板130可由此高反射率材料(如金属)所一体成型。或者，此高反射率材料可涂布于一基板(未显示)，而形成反射板130。在本实施例中，反射板130的反射表面为平坦表面，亦即反射板130可作为一平面镜。
在一实施例中，当进行曝光时，透光基板101可承载于反射板130上，此时，透光基板101的底面可接触于反射板130的反射表面。在又一实施例中，一透光载板(未显示)可设置于透光基板101与反射板130之间，用于承载透光基板101，并可允许光线穿过。
如图1所示，本实施例的曝光方法可包括如下步骤：利用曝光光源110来提供光线至光阻层102，以进行曝光，其中曝光光源110所提供的光线是穿过光掩模120来到达光阻层102；以及利用反射板130来将穿过光阻层102及透光基板101的光线反射回光阻层102。
举例说明，如图1所示，当本实施例的曝光装置100应用于液晶显示面板的制程时，透光基板101可为玻璃基板，光阻层102与透光基板101之间具有一欲被图案化的透明电极层(如ITO层)103。当利用本实施例的曝光装置100来曝光光阻层102时，曝光光源110可发光来提供光线至光阻层102，曝光光源110的光线可通过光掩模120来到达光阻层102。接着，光线可穿过光阻层102、透明电极层103及透光基板101，而穿过透光基板101的光线可通过反射板130来反射回光阻层102，以增加光阻层102的底部的受光量，确保光阻层102可被充分地曝光，避免因预设图案线距过小或深宽比过高而光阻层102的底部无法充分曝光的情形。
请参照图2及图3，图2显示依照本发明的第一实施例的图案化后光阻层的示意图，图3显示依照本发明的第一实施例的蚀刻后透明电极层的示意图。如图2所示，在进行曝光后，通过一显影步骤来移除部分的光阻层102，以图案化光阻层102。如图3所示，接着，通过一蚀刻步骤来移除未被此图案化光阻层102所遮蔽的透明电极层103。接着，移除此图案化光阻层102，可得到图案化后的透明电极层103。
通过本实施例的曝光装置100及曝光方法，可确保光阻层102被完全地曝光，因而可减少预设图案的线距或光掩模120的透光开口122的宽度。在本实施例中，预设图案的线距或光掩模120的透光开口122的宽度可小于3 um，优选是小于或等于2 um。
请参照图4，其显示依照本发明的第二实施例的曝光装置的示意图。第二实施例的曝光装置200可包括曝光光源210、光掩模220及反射板230。光掩模220是设置于曝光光源210与透光基板101上的光阻层102之间，反射板230是用于将穿过光阻层102及透光基板101的光线反射回光阻层101。相较于第一实施例，第二实施例的反射板230具有多个凸面结构，其面对于透光基板101。因此，反射板230的多个反射凸面可作为凸面镜。
请参照图5，其显示依照本发明的第三实施例的曝光装置的示意图。第三实施例的曝光装置300可包括曝光光源310、光掩模320及反射板330。光掩模320是设置于曝光光源310与透光基板101上的光阻层102之间，反射板330是用于将穿过光阻层102及透光基板101的光线反射回光阻层101。相较于第一实施例，第三实施例的反射板330具有多个凹面结构，其面对于透光基板101。因此，反射板330的多个反射凹面可作为凹面镜。
由上述可知，通过本发明的曝光装置及曝光方法，可确保光阻层被曝光的部分可吸收足够的曝光能量，因而可在显影步骤后形成符合预设要求的图案。因此，通过本发明的曝光装置及曝光方法，可缩小所期望的图案线距，以提升电子装置的性能。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。
 本发明的实施方式
工业实用性
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Claims (15)

  1. 一种曝光装置，用于对一透光基板上的光阻层进行曝光，其中所述曝光装置包括：
    光掩模，设置于所述光阻层的一侧，其中所述光掩模包括透光开口，所述透光开口的宽度是等于或小于2 um；
    曝光光源，用于提供光线至所述光阻层，其中所述曝光光源所提供的光线是穿过所述光掩模来到达所述光阻层；以及
    反射板，设置于所述光阻层的相对一侧，用于将穿过所述光阻层及所述透光基板的光线反射回所述光阻层，当进行曝光时，所述反射板是平行于所述透光基板上的所述光阻层。
  2. 根据权利要求1所述的曝光装置，其中所述反射板的反射表面为平坦表面。
  3. 根据权利要求1所述的曝光装置，其中所述反射板具有多个凸面结构。
  4. 根据权利要求1所述的曝光装置，其中所述反射板具有多个凹面结构。
  5. 一种曝光装置，用于对一透光基板上的光阻层进行曝光，其中所述曝光装置包括：
    光掩模，设置于所述光阻层的一侧；
    曝光光源，用于提供光线至所述光阻层，其中所述曝光光源所提供的光线是穿过所述光掩模来到达所述光阻层；以及
    反射板，设置于所述光阻层的相对一侧，用于将穿过所述光阻层及所述透光基板的光线反射回所述光阻层。
  6. 根据权利要求5所述的曝光装置，其中所述光掩模包括透光开口，所述透光开口的宽度小于3 um。
  7. 根据权利要求6所述的曝光装置，其中所述透光开口的宽度等于或小于2 um。
  8. 根据权利要求5所述的曝光装置，其中所述反射板的反射表面为平坦表面。
  9. 根据权利要求5所述的曝光装置，其中所述反射板具有多个凸面结构。
  10. 根据权利要求5所述的曝光装置，其中所述反射板具有多个凹面结构。
  11. 根据权利要求5所述的曝光装置，其中当进行曝光时，所述反射板是平行于所述透光基板上的所述光阻层。
  12. 一种曝光方法，用于对一透光基板上的光阻层进行曝光，其中所述曝光方法包括如下步骤：
    利用曝光光源来提供光线至所述光阻层，其中所述曝光光源所提供的光线是穿过光掩模来到达所述光阻层；以及
    利用反射板来将穿过所述光阻层及所述透光基板的光线反射回所述光阻层。
  13. 根据权利要求12所述的曝光方法，其中所述光掩模包括透光开口，所述透光开口的宽度小于3 um。
  14. 根据权利要求12所述的曝光方法，其中当进行曝光时，所述反射板是平行于所述透光基板上的所述光阻层。
  15. 根据权利要求12所述的曝光方法，其中当利用所述反射板来反射光线时，所述透光基板是承载于所述反射板上。
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