WO2013080549A1 - Module de cellule solaire et son procédé de fabrication - Google Patents

Module de cellule solaire et son procédé de fabrication Download PDF

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Publication number
WO2013080549A1
WO2013080549A1 PCT/JP2012/007665 JP2012007665W WO2013080549A1 WO 2013080549 A1 WO2013080549 A1 WO 2013080549A1 JP 2012007665 W JP2012007665 W JP 2012007665W WO 2013080549 A1 WO2013080549 A1 WO 2013080549A1
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WIPO (PCT)
Prior art keywords
glass plate
back glass
hole
solar cell
translucent member
Prior art date
Application number
PCT/JP2012/007665
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English (en)
Japanese (ja)
Inventor
篠原　亘
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三洋電機株式会社
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Publication of WO2013080549A1 publication Critical patent/WO2013080549A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar cell module and a manufacturing method thereof.
  • a transparent glass substrate, a filling adhesive, a photoelectric conversion panel, a filling adhesive, and a back surface protection cover material are sequentially stacked and integrated into a laminated configuration, and then the peripheral edge is sealed with a sealing material. Obtained.
  • the two lead wires connected to the photoelectric conversion panel penetrate the filling adhesive and the back surface protection cover material, and are provided outside the back surface protection cover material.
  • the back protective cover material is provided with a terminal port for penetrating the two lead wires.
  • the terminal port is sealed with a filling adhesive such as silicone resin.
  • the peripheral edge is sealed with a sealing material, or the terminal port is sealed with a filling adhesive.
  • the sealing material and the filling adhesive deteriorate, and moisture easily enters.
  • the terminal port is provided close to the photoelectric conversion panel, the probability of failure of the photoelectric conversion panel increases when moisture enters from the terminal port.
  • the above-mentioned filling adhesive is considered to be waterproof, there is room for further improvement from the viewpoint of moisture resistance.
  • the present invention has been made in view of such circumstances, and an object thereof is to provide a technique for improving the reliability of a solar cell module.
  • a solar cell module includes a translucent member disposed on the light receiving side, a back glass plate provided to face the translucent member, and a translucent member.
  • a photovoltaic device provided between the conductive member and the back glass plate, and a conductive path provided on the surface of the back glass plate for outputting the electric power generated in the photovoltaic device to the outside.
  • the back glass plate has a through hole formed therein, and the terminal is disposed so as to cover the through hole, and at least a part of the periphery of the through hole is melt bonded to the back glass plate.
  • Another aspect of the present invention is a method for manufacturing a solar cell module.
  • a step of preparing a translucent member provided with a photovoltaic device, and an electric power generated in the photovoltaic device on the surface of a back glass plate in which a through hole is formed are externally provided.
  • a step of irradiating, and a step of making the translucent member and the back glass plate face each other and joining the peripheral portion.
  • the reliability of the solar cell module can be improved.
  • FIG. 2 is a cross-sectional view taken along line AA in the vicinity of the terminal box shown in FIG. It is the front view which looked at the inside of the terminal box shown in FIG. 1 from the back surface side.
  • 4 (a) to 4 (c) are diagrams for explaining a method of manufacturing a solar cell module. It is an enlarged view of the junction part vicinity of the metal terminal and back glass plate which concern on 2nd Embodiment. It is an enlarged view of the junction part vicinity of the metal terminal and back glass plate which concern on 3rd Embodiment. It is a figure which shows the modification of the connection mechanism of a metal terminal and a cable.
  • FIG. 1 is a plan view of the solar cell module according to the first embodiment viewed from the light receiving surface side.
  • 2 is a cross-sectional view taken along the line AA in the vicinity of the terminal box shown in FIG.
  • FIG. 3 is a front view of the inside of the terminal box shown in FIG. 1 viewed from the back side.
  • the solar cell module 10 includes a translucent member 12 disposed on the light receiving side, a back glass plate 14 provided so as to face the translucent member 12, and the translucent member 12 and the back glass plate 14. And a photovoltaic device 16 provided therebetween.
  • the translucent member 12 for example, a glass plate having a 1 m square and a plate thickness of 4 mm is applied.
  • the present invention is not limited to this, and any material that is suitable for forming the photovoltaic device 16 and that can mechanically support the solar cell module 10 may be used. Incidence of light to the solar cell module 10 is basically performed from the translucent member 12 side.
  • a photovoltaic device 16 is formed on the translucent member 12.
  • the photovoltaic device 16 is formed by laminating a transparent electrode, a photoelectric conversion unit, a back electrode, and the like.
  • the transparent electrode for example, tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), etc. is doped with tin (Sn), antimony (Sb), fluorine (F), aluminum (Al), etc.
  • TCO transparent conductive oxides
  • a film in which at least one kind or a plurality of kinds is combined can be used.
  • the photoelectric conversion unit examples include an amorphous silicon photoelectric conversion unit (a-Si unit) and a microcrystalline silicon photoelectric conversion unit ( ⁇ c-Si unit).
  • the photoelectric conversion unit may have a structure in which a plurality of photoelectric conversion units are stacked such as a tandem type or a triple type.
  • the back electrode can be a transparent conductive oxide (TCO), a reflective metal, or a laminated structure thereof.
  • TCO transparent conductive oxide
  • SnO 2 tin oxide
  • ZnO zinc oxide
  • ITO indium tin oxide
  • silver (Ag), aluminum (Al ) Or the like is used.
  • the back glass plate 14 is provided so as to cover the photovoltaic device 16 formed on the translucent member 12.
  • the back glass plate 14 has, for example, substantially the same size as the translucent member 12, and a glass plate having a thickness of 3.2 mm is applied. However, it is not limited to this.
  • the translucent member 12 and the back glass plate 14 are melt-bonded in the bonding region R1 in the outer peripheral region thereof.
  • the joining region R1 is provided in the peripheral portion R2 where the photovoltaic device 16 is not formed in the translucent member 12.
  • the peripheral portion R2 (region not hatched in FIG. 1) can be provided by removing the photovoltaic device 16 once formed on the translucent member 12 with a laser or the like.
  • at least one peripheral portion of the translucent member 12 and the back glass plate 14 may be bent. Is preferred.
  • the solar cell module 10 is provided on the front surface 14 a of the back glass plate 14, and has a metal terminal 18 having a conductive path 18 a that outputs power generated in the photovoltaic device 16 to the outside. It has. Further, the back glass plate 14 has two through holes 20 having a diameter of 6 mm formed at the center, and the metal terminals 18 are arranged so as to cover the through holes 20, and the periphery of the through holes 20 (see FIG. 3). At least a part of the hatching region R3) shown is melt bonded to the back glass plate 14.
  • the metal terminal 18 is melt-bonded and at least melt-bonded to the back glass plate 14 in at least a part of the periphery of the through-hole 20 in a state of covering the through-hole 20 of the back glass plate 14. Highly airtight against the ingress of moisture from the outside is realized in the part. Therefore, external moisture passes between the metal terminal 18 and the back glass plate 14 and is prevented from entering the inside of the solar cell module 10 through the through hole 20, and long-term reliability of the solar cell module 10. Can be improved.
  • melt-bonding can be understood as, for example, a state where the metal terminals 18 and the back glass plate 14 are partly melted and joined together. More preferably, at the interface between the metal terminal 18 and the back glass plate 14, the material of the metal terminal 18 and the glass of the back glass plate 14 may be melted and mixed with each other.
  • a first current collecting wiring 22 and a second current collecting wiring 24 are formed in order to take out the electric power generated by the photovoltaic device 16.
  • the first current collecting wiring 22 is a wiring for collecting current from the photovoltaic devices 16 divided in parallel, and the second current collecting wiring 24 is connected from the first current collecting wiring 22 to the terminal box 26. Wiring.
  • the first current collecting wiring 22 is extended on the back electrode of the photovoltaic device 16.
  • the first current collector wiring 22 is formed to connect the positive electrodes and the negative electrodes of the photoelectric conversion layers divided in parallel near the end of the solar cell module 10. Therefore, the 1st current collection wiring 22 is extended along the direction orthogonal to the parallel division direction of a photoelectric conversion layer.
  • the first current collector wiring 22 extends along the vertical direction on the left and right edges. As a result, the positive electrodes and the negative electrodes of the photovoltaic devices 16 connected in series are connected in parallel.
  • an insulating coating material 28 is disposed in order to form electrical insulation between the second current collector wiring 24 and the back electrode of the photovoltaic device 16. As shown in FIG. 1 and FIG. 2, the insulating coating material 28 extends from the vicinity of the first current collector wiring 22 provided along the left and right edges of the solar cell module 10 to the vicinity of the arrangement position of the terminal box 26 in the central portion. , Extending on the back electrode of the photovoltaic device 16.
  • the insulating coating material 28 is preferably made of, for example, polyester (PE), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide, polyvinyl fluoride, or the like. Moreover, it is preferable to use the insulating coating material 28 in which an adhesive is applied to the back surface in a sealing manner.
  • the second current collecting wiring 24 is extended from the left and right first current collecting wirings 22 along the insulating coating material 28 toward the center of the solar cell module 10. Yes.
  • the insulation coating material 28 is sandwiched between the second current collecting wiring 24 and the back electrode of the photovoltaic device 16, so that electrical insulation between the second current collecting wiring 24 and the back electrode is maintained.
  • one end of the second current collecting wiring 24 extends to the first current collecting wiring 22 and is electrically connected to the first current collecting wiring 22.
  • the second current collecting wiring 24 is preferably electrically connected to the first current collecting wiring 22 by ultrasonic soldering or the like.
  • the other end of the 2nd current collection wiring 24 is electrically connected with the metal terminal 18 in the terminal box 26 via the spring which is the electroconductive elastic member mentioned later.
  • a region where the translucent member 12 and the back glass plate 14 are opposed is filled with a filler 30.
  • a filler 30 in addition to butyl rubber and ethylene vinyl acetate (EVA), materials used for coking such as silicone, filled resin materials such as polyvinyl butyral (PVB), ethylene resins such as ethylene ethyl acrylate copolymer (EEA), urethane, Acrylic or epoxy resin may be used.
  • EVA ethylene vinyl acetate
  • the laser beam 34 is preferably a femtosecond laser beam. That is, the laser beam 34 preferably has a pulse width of 1 nanosecond or less.
  • the laser beam 34 preferably has a wavelength at which absorption occurs in at least one of the translucent member 12 and the back glass plate 14. For example, it is preferable that the laser beam 34 has a wavelength of 800 nm. Furthermore, it is preferable that the laser beam 34 is irradiated at an energy density and a scanning speed sufficient to melt the translucent member 12 and the back glass plate 14.
  • the laser beam 34 is preferably irradiated with a pulse energy of a wavelength of 800 nm, a pulse width of 150 fs, an oscillation repetition rate of 1 kHz, and 5 microjoules ( ⁇ J) per pulse.
  • the laser beam 34 is preferably scanned at a scanning speed of 60 mm / min. Further, the laser beam 34 may be irradiated from either the translucent member 12 side or the back glass plate 14 side.
  • the metal terminal 18 is melt-bonded to the back glass plate 14 in at least a part of the periphery of the through hole 20 (hatching region R3 shown in FIG. 3).
  • the metal terminal 18 may be melt-bonded to the back glass plate 14 over the entire circumference around the through hole 20. Accordingly, it is further suppressed that external moisture passes between the metal terminal 18 and the back glass plate 14 and enters the solar cell module 10 through the through hole 20.
  • the metal terminal 18 has a cylindrical shape with a diameter of 30 mm and a thickness of 5 mm, and is made of copper.
  • the metal terminal 18 is a metal whose surface is plated with a low resistivity material such as aluminum, gold or silver, Kovar (an alloy in which nickel and cobalt are mixed with iron), or at least a part of the metal terminal 18, or Other alloys may be used. Thereby, the electric power generated by the photovoltaic device 16 can be output to the outside through the metal terminal 18.
  • the metal terminal 18 has a large-diameter cylindrical portion facing the back glass plate 14 and a small-diameter cylindrical portion protruding from the center of one end face of the large-diameter cylindrical portion.
  • the small-diameter columnar portion is positioned in the through hole 20 to position the metal terminal 18 with respect to the rear glass plate 14.
  • a cable 36 is connected to the other end face of the large-diameter column by solder or the like.
  • FIG. 4A ⁇ Method for manufacturing solar cell module> 4 (a) to 4 (c) are diagrams for explaining a method of manufacturing a solar cell module.
  • the metal terminal 18 to which the cable 36 is connected is arranged on the front surface 14 a of the back glass plate 14 in which the through hole 20 is formed so as to cover the through hole 20.
  • the pulse width is 1 nanosecond or less from the opposite side to the side by which the metal terminal 18 of the back surface glass plate 14 is provided in the opposing part of the back surface glass plate 14 and the metal terminal 18.
  • a laser beam 34 is irradiated using a laser device 32. Thereby, the metal terminal 18 and the back surface glass plate 14 are melt-bonded.
  • a translucent member 12 provided with the photovoltaic device 16 is prepared.
  • the 1st current collection wiring 22, the 2nd current collection wiring 24, insulating covering material 28, filler 30 (not shown in Drawing 4 (b)) etc. are arranged suitably.
  • the back glass plate 14 on which the metal terminals 18 are melt-bonded and the translucent member 12 provided with the photovoltaic device 16 are opposed to each other and overlapped with each other in a predetermined positional relationship.
  • a spring 38 as a conductive elastic member for conducting the metal terminal 18 and the photovoltaic device 16 is arranged in a state of being biased inside the through hole 20 (see FIG. 4C).
  • One end of the biased spring 38 contacts the metal terminal 18 inside the through hole 20, and the other end contacts the second current collector wiring 24. That is, the second current collection wiring 24 and the cable 36 are electrically connected to each other via the spring 38 and the metal terminal 18.
  • the solar cell module 10 is deformed by external force or heat, or the joining position of the metal terminal 18 is shifted, so that the positional relationship between the metal terminal 18 and the photovoltaic device 16 or each wiring changes.
  • high connection reliability is realized.
  • the surface of the spring 38 is covered with a material having higher conductivity than the core material of the spring 38.
  • the material having high conductivity include gold (Au), silver (Ag), and copper (Cu).
  • Au gold
  • Ag silver
  • Cu copper
  • the entire spring 38 may be made of a highly conductive material such as gold (Au), silver (Ag), or copper (Cu).
  • the translucent member 12 and the back glass plate 14 are opposed to each other, and the peripheral portion is melt-bonded by the laser beam 34 to complete the completely sealed solar cell module 10. To do.
  • FIG. 5 is an enlarged view of the vicinity of the joint between the metal terminal and the back glass plate according to the second embodiment.
  • the metal terminal 40 according to the second embodiment has a glass portion 40a in which glass frit is baked.
  • the glass part 40 a is a cylindrical part fired around the small-diameter columnar part 40 b of the metal terminal 40.
  • the glass frit refers to, for example, glass fragments (flakes) or powder produced by melting a glass raw material at a high temperature and quenching.
  • the glass part 40a is formed by applying glass frit to the metal part of the metal terminal 40 using a dispenser and then baking at 200 ° C. for about 20 minutes.
  • the metal terminal 40 is melt-bonded to the back glass plate 14 through the glass portion 40a.
  • the fusion bonding is performed by a laser beam 34 emitted from the laser device 32 from the side opposite to the side where the metal terminals 40 of the back glass plate 14 are provided.
  • a laser beam 34 emitted from the laser device 32 from the side opposite to the side where the metal terminals 40 of the back glass plate 14 are provided.
  • FIG. 6 is an enlarged view of the vicinity of the joint between the metal terminal and the back glass plate according to the third embodiment.
  • the metal terminal 42 according to the third embodiment is brazed and welded to the intermediate glass 44 in which the through-hole 43 is formed, using a braze 46.
  • the metal terminal 42 is preferably, for example, Kovar.
  • the intermediate glass 44 is preferably a borosilicate glass that is easy to braze. Note that TIG (Tungsten Inert Gas) welding may be used instead of brazing.
  • the metal terminal 42 is melt bonded to the back glass plate 14 via the intermediate glass 44.
  • the fusion bonding is performed by a laser beam 34 emitted from the laser device 32 as in the first embodiment.
  • the joining portion of the intermediate glass 44 and the back glass plate 14 to which the metal terminal 40 is fixed is made of glass, it is possible to perform fusion bonding with higher strength and higher sealing performance. It becomes.
  • FIG. 10 is a cross-sectional view showing the structure of a solar cell module according to the fourth embodiment.
  • FIG. 11 is a plan view showing a light receiving surface of a solar cell module according to the fourth embodiment.
  • the solar cell module 500 includes a metal terminal 18, a through hole 20, a cable 36, a support substrate 60, a passivation layer 61, a base layer 62, and a first conductive material. Mold diffusion layer 63, i-type layer 64, second conductivity type layer 65, transparent electrode layer 66, metal layer 67 (67p, 67n), filler 68, back glass plate 69, conductive tab 70 (see FIG. 11), A current collecting tab 71 (see FIG. 11) is included.
  • the passivation layer 61, the base layer 62, the first conductivity type diffusion layer 63, the i-type layer 64, the second conductivity type layer 65, the transparent electrode layer 66, and the metal layer 67 constitute a photoelectric conversion element.
  • the photovoltaic device 510 includes a plurality of photoelectric conversion elements.
  • the photovoltaic device 510 is a back junction type photovoltaic device, and an electrode for taking out the electric power generated by the photovoltaic device to the outside is a main surface opposite to the light receiving surface (hereinafter referred to as a back surface). Only provided.
  • the application range of the present invention is not limited to this, and any photovoltaic device in which a plurality of photoelectric conversion elements are arranged on the support substrate 60 may be used.
  • the light receiving surface means a main surface on which light is mainly incident in the photovoltaic element, and specifically, is a surface on which most of the light incident on the photovoltaic element is incident.
  • the back surface means a surface opposite to the light receiving surface of the photovoltaic element.
  • the support substrate 60 mechanically supports the photovoltaic element and protects the semiconductor layer included in the photovoltaic element from the external environment.
  • the photovoltaic element transmits light in a wavelength band used for power generation, and mechanically supports each layer such as the base layer 62.
  • the material is made.
  • As the support substrate 60 for example, a glass plate having translucency is used.
  • the passivation layer 61 is provided between the support substrate 60 and the base layer 62.
  • the passivation layer 61 plays a role of terminating dangling bonds (dangling bonds) on the surface of the base layer 62 and suppresses carrier recombination on the surface of the base layer 62.
  • dangling bonds dangling bonds
  • the passivation layer 61 may include, for example, a silicon nitride layer (SiN), and more preferably has a stacked structure of a silicon oxide layer (SiOx) and silicon nitride.
  • SiN silicon nitride layer
  • SiOx silicon oxide layer
  • silicon nitride a structure in which a silicon oxide layer and a silicon nitride layer are sequentially stacked with a thickness of 30 nm and 40 nm, respectively, may be used.
  • the support substrate 60 and the photoelectric conversion element are bonded to each other through the passivation layer 61.
  • the base layer 62 is a crystalline semiconductor layer. Note that the crystalline includes not only a single crystal but also a polycrystal in which a large number of crystal grains are aggregated.
  • the base layer 62 becomes a power generation layer of the photovoltaic element.
  • the base layer 62 is an n-type crystalline silicon layer to which an n-type dopant is added.
  • the doping concentration of the base layer 62 may be about 10 16 / cm 3 .
  • the film thickness of the base layer 62 is a film thickness that can sufficiently generate carriers as a power generation layer, and is desirably 50 ⁇ m or less.
  • the base layer 62 and the first conductivity type diffusion layer 63 form a first conductivity type contact region in which the crystalline materials are homo-joined.
  • the first conductivity type diffusion layer 63 is an n-type crystalline silicon layer to which an n-type dopant is added.
  • the first conductivity type diffusion layer 63 is a layer bonded to the metal layer 67 (first electrode 67n) and has a higher doping concentration than the base layer 62.
  • the doping concentration of the first conductivity type diffusion layer 63 may be about 10 19 / cm 3 .
  • the film thickness of the first conductivity type diffusion layer 63 is preferably as thin as possible within a range where the contact resistance with the metal can be sufficiently lowered, and may be, for example, 0.1 ⁇ m or more and 2 ⁇ m or less.
  • the i-type layer 64 and the second conductivity type layer 65 are amorphous semiconductor layers. Note that the amorphous system includes an amorphous phase or a microcrystalline phase in which minute crystal grains are precipitated in the amorphous phase.
  • the i-type layer 64 and the second conductivity type layer 65 are made of amorphous silicon containing hydrogen.
  • the i-type layer 64 is a substantially intrinsic amorphous silicon layer.
  • the second conductivity type layer 65 is an amorphous silicon layer to which a p-type dopant is added.
  • the second conductivity type layer 65 is a semiconductor layer having a higher doping concentration than the i-type layer 64.
  • the i-type layer 64 is not intentionally doped, and the doping concentration of the second conductivity type layer 65 may be about 10 18 / cm 3 .
  • the thickness of the i-type layer 64 is made thin so that light absorption can be suppressed as much as possible, while it is made thick enough that the surface of the base layer 62 is sufficiently passivated. Specifically, the thickness may be 1 nm or more and 50 nm or less, for example, 10 nm.
  • the film thickness of the second conductivity type layer 65 is made thin so as to suppress light absorption as much as possible, while it is made so thick that the open circuit voltage of the photovoltaic element becomes sufficiently high.
  • the thickness may be 1 nm or more and 50 nm or less, for example, 10 nm.
  • the transparent electrode layer 66 is doped with tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (ITO), etc. with tin (Sn), antimony (Sb), fluorine (F), aluminum (Al), etc. It is preferable to use at least one or a combination of a plurality of transparent conductive oxides (TCO). In particular, zinc oxide (ZnO) has advantages such as high translucency and low resistivity.
  • the film thickness of the transparent electrode layer 66 may be 10 nm or more and 500 nm or less, for example, 100 nm.
  • the base layer 62, the i-type layer 64, and the second conductivity type layer 65 form a second conductivity type contact region in which crystalline and amorphous are heterojunctioned.
  • the metal layer 67 is a layer serving as an electrode provided on the back side of the photovoltaic element.
  • the metal layer 67 is made of a conductive material such as metal, and is made of, for example, a material containing copper (Cu) or aluminum (Al).
  • the metal layer 67 includes a first electrode 67 n connected to the first conductivity type diffusion layer 63 and a second electrode 67 p connected to the second conductivity type layer 65.
  • the metal layer 67 may further include an electrolytic plating layer such as copper (Cu) or tin (Sn). However, it is not limited to this, It is good also as other metals, such as gold
  • the first electrode 67n and the second electrode 67p of the plurality of photovoltaic elements arranged in parallel are connected by the conductive tab 70, and the plurality of photovoltaic elements are connected in series or in parallel.
  • a filler 68 is disposed on the back side of the photovoltaic element and sealed with a back glass plate 69.
  • the filler 68 can be a resin material such as EVA or polyimide.
  • the back glass plate 69 is a glass plate having a size substantially the same as that of the support substrate 60, thereby preventing moisture from entering the power generation layer of the photovoltaic device 510 in the solar cell module 500. .
  • the through-hole 20 is formed in the back glass plate 69 serving as a path for taking out the electric energy generated by the photovoltaic element to the outside, and the whole is covered with the metal terminal 18.
  • the metal terminal 18 is disposed so as to cover the through hole 20, and is melt-bonded to the back glass plate 69 in at least a part of the periphery (region R ⁇ b> 3) of the through hole 20.
  • a spring 38 as a conductive elastic member that conducts between the metal terminal 18 and the current collecting tab 71 connected to the conductive tab 70 is arranged in a state of being biased inside the through hole 20 (see FIG. 10). ). One end of the biased spring 38 contacts the metal terminal 18 inside the through hole 20, and the other end contacts the current collecting tab 71.
  • the solar cell module 500 includes a cable 36 connected to the metal terminal 18 in order to output the electric energy generated by the photovoltaic device 510 to the outside.
  • the present invention has been described with reference to each of the above-described embodiments, but the present invention is not limited to each of the above-described embodiments, and the configuration of the embodiments is appropriately combined or replaced. Are also included in the present invention. Further, it is possible to appropriately change the combination and processing order in each embodiment based on the knowledge of those skilled in the art and to add various modifications such as various design changes to each embodiment. Embodiments to which is added can also be included in the scope of the present invention.
  • FIG. 7 is a diagram illustrating a modification of the connection mechanism between the metal terminal and the cable.
  • the metal terminal 48 that is melt-bonded to the back glass plate 14 is connected to the cable 36 via the connection member 50.
  • the connection member 50 includes a crimp terminal 52 that is crimped to one end of the cable 36, and a screw 54 that fixes the crimp terminal 52 to the metal terminal 48. Thereby, the metal terminal 48 and the cable 36 are detachably connected, and the cable 36 can be easily replaced.
  • FIG. 8 and FIG. 9 are diagrams showing modifications of the fusion bonding between the translucent member 12 and the back glass plate 14.
  • the translucent member 12 and the back glass plate 14 may be melt-bonded by melting.
  • the spacer 56 it is preferable to apply a material containing an element capable of melt-bonding the translucent member 12 and the back glass plate 14, such as Si, SiO, SiO 2 , or SiO X.
  • the frame-shaped spacer 56 may be formed by applying the above-described glass frit to the outer peripheral portion of the back glass plate 14 by screen printing and baking.
  • the laser beam 34 can be irradiated from either the translucent member 12 side or the back glass plate 14 side. Therefore, when the photovoltaic device 16 (including the silicon substrate) itself is thick like a crystalline silicon solar cell, the surface 56a of the spacer 56 and the translucent member 12 are melted as shown in FIG. The back surface 56b of the spacer 56 and the back glass plate 14 may be melt-bonded to each other.
  • the solar cell module by the following combination and its manufacturing method can also be included in the scope of the present invention.
  • Solar cell module A translucent member disposed on the light receiving side; A back glass plate provided to face the translucent member; A photovoltaic device provided between the translucent member and the back glass plate; A terminal provided on the surface of the back glass plate, and having a conductive path for outputting the power generated in the photovoltaic device to the outside,
  • the back glass plate has a through hole formed, The terminal is disposed so as to cover the through hole, and is melt-bonded to the back glass plate at least at a part of the periphery of the through hole.
  • a conductive elastic member that conducts the terminal and the photovoltaic device is further provided, and the conductive elastic member is disposed in the through hole in an urged state (1) or (2 ).
  • the manufacturing method of the solar cell module Preparing a translucent member provided with a photovoltaic device; On the surface of the back glass plate in which the through hole is formed, a step of arranging a terminal having a conductive path for outputting the electric power generated in the photovoltaic device to the outside so as to cover the through hole, A step of irradiating a laser beam having a pulse width of 1 nanosecond or less to the opposed portion of the back glass plate and the terminal around the through hole; A step of making the translucent member and the back glass plate face each other and bonding a peripheral edge; including.
  • the present invention can be used for solar cells.

Abstract

Ce module de cellule solaire (10) est pourvu : d'un élément translucide (12) disposé sur le côté de réception de lumière; d'une plaque de verre de surface arrière (14) disposée de manière à être opposée à l'élément translucide; un dispositif photovoltaïque (16) placé entre l'élément translucide (12) et la plaque de verre de surface arrière (14); et une borne métallique (18) disposée sur l'avers de la plaque de verre de surface arrière (14) et ayant un chemin conducteur (18a) qui émet en sortie la puissance électrique, générée au niveau du dispositif photovoltaïque (16), vers l'extérieur. Un trou traversant (20) est formé au niveau de la plaque de verre de surface arrière (14), et la borne métallique (18) est disposée de manière à couvrir le trou traversant (20), étant soudée/reliée à la plaque de verre de surface arrière (14) au moins au niveau d'une partie de la périphérie du trou traversant (20).
PCT/JP2012/007665 2011-11-29 2012-11-29 Module de cellule solaire et son procédé de fabrication WO2013080549A1 (fr)

Applications Claiming Priority (2)

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JP2011-260643 2011-11-29
JP2011260643A JP2015035436A (ja) 2011-11-29 2011-11-29 太陽電池モジュールおよびその製造方法

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WO2013080549A1 true WO2013080549A1 (fr) 2013-06-06

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266648A (ja) * 1999-11-22 2007-10-11 Canon Inc 光起電力素子の製造方法、被覆線の被覆除去方法及び被覆線と導体の接合方法
JP2009152249A (ja) * 2007-12-18 2009-07-09 Seiko Epson Corp 接合方法、接合体、半導体装置および光電変換素子
JP2010114034A (ja) * 2008-11-10 2010-05-20 Fujikura Ltd 色素増感太陽電池モジュール
JP2010228998A (ja) * 2009-03-27 2010-10-14 Asahi Glass Co Ltd 封着材料層付きガラス部材とそれを用いた電子デバイスおよびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266648A (ja) * 1999-11-22 2007-10-11 Canon Inc 光起電力素子の製造方法、被覆線の被覆除去方法及び被覆線と導体の接合方法
JP2009152249A (ja) * 2007-12-18 2009-07-09 Seiko Epson Corp 接合方法、接合体、半導体装置および光電変換素子
JP2010114034A (ja) * 2008-11-10 2010-05-20 Fujikura Ltd 色素増感太陽電池モジュール
JP2010228998A (ja) * 2009-03-27 2010-10-14 Asahi Glass Co Ltd 封着材料層付きガラス部材とそれを用いた電子デバイスおよびその製造方法

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