WO2013069767A1 - Substrate for light emitting elements, light emitting module, and method for manufacturing light emitting module - Google Patents

Substrate for light emitting elements, light emitting module, and method for manufacturing light emitting module Download PDF

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Publication number
WO2013069767A1
WO2013069767A1 PCT/JP2012/079118 JP2012079118W WO2013069767A1 WO 2013069767 A1 WO2013069767 A1 WO 2013069767A1 JP 2012079118 W JP2012079118 W JP 2012079118W WO 2013069767 A1 WO2013069767 A1 WO 2013069767A1
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Prior art keywords
layer
light emitting
alloy
emitting element
lead frame
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PCT/JP2012/079118
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French (fr)
Japanese (ja)
Inventor
晋司 山本
啓太 渡辺
石尾　雅昭
Original Assignee
株式会社Ｎｅｏｍａｘマテリアル
日立金属株式会社
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Application filed by 株式会社Ｎｅｏｍａｘマテリアル, 日立金属株式会社 filed Critical 株式会社Ｎｅｏｍａｘマテリアル
Priority to KR1020147007433A priority Critical patent/KR101860173B1/en
Priority to CN201280055359.8A priority patent/CN103931006B/en
Publication of WO2013069767A1 publication Critical patent/WO2013069767A1/en

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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
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Definitions

  • the present invention relates to a light emitting element substrate, a light emitting module, and a method for manufacturing a light emitting module, and more particularly to a light emitting element substrate on which a light emitting element is disposed, a light emitting module including the light emitting element substrate, and a method for manufacturing a light emitting module.
  • a light emitting element substrate on which a light emitting element is disposed is known.
  • Such a light emitting element substrate is disclosed in, for example, Japanese Patent Laid-Open No. 2003-133596.
  • a metal substrate (light emitting element substrate), an insulating layer arranged so as to form a recess on the surface of the metal substrate, a surface of the metal substrate, and in the recess
  • An LED display device includes an LED (light emitting element) disposed on the substrate, a bonding wire that connects the LED and a circuit pattern on an insulating layer, and a transparent sealing material that fills the recess.
  • the metal substrate of this LED display device is configured to release heat to the chassis or the like while securing mechanical strength as a substrate on which the LEDs are arranged by being fixed to the chassis or the like.
  • the metal substrate is made of any one of Al, Cu and Fe, a clad material containing two or three kinds of the metal material, or an alloy containing the metal material. Things are illustrated.
  • the above Japanese Patent Application Laid-Open No. 2003-133596 discloses a specific configuration in the case where the metal substrate is made of a plurality of metal materials (type, thickness, order of combination, etc. of each metal material (metal layer) constituting the metal substrate). ) Is not disclosed at all.
  • the metal substrate of the LED display device is composed of any one of Al, Cu, Fe exemplified in JP-A-2003-133596, or a clad material containing two or three of these metals.
  • sufficient heat dissipation performance may not be obtained.
  • the heat dissipation performance of the metal substrate is not sufficient, it is considered that the heat of the LED is not sufficiently transmitted to the chassis side through the metal substrate but is accumulated on the metal substrate in the vicinity of the LED. For this reason, it is difficult to transfer heat from the LED to the metal substrate, and the temperature of the LED rises. As a result, there is a problem that the luminance of the LED is lowered and the lifetime of the LED is shortened.
  • the mechanical strength of the metal substrate is lowered, the metal substrate is easily damaged during handling, and there is a problem that the manufacture of the LED display device is hindered.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to improve the heat dissipation performance of the substrate for the light-emitting element and to suppress the decrease in luminance caused by the temperature rise of the light-emitting element.
  • a light-emitting element substrate capable of ensuring sufficient mechanical strength
  • a light-emitting module including the light-emitting element substrate and a method for manufacturing the light-emitting module are provided.
  • a substrate for a light-emitting element according to a first aspect of the present invention is disposed on a surface on which a light-emitting element is disposed, and is a first layer made of any one of Cu, Ag, Al, Cu alloy, Ag alloy, or Al alloy. And the second layer made of Fe or Fe alloy, and the second layer sandwiched between the first layer and disposed on the other surface, either Cu, Ag, Al, Cu alloy, Ag alloy or Al alloy And a surface having an arithmetic average roughness (Ra) as an index indicating the surface roughness, while the kurtosis (Rku) as an index indicating the surface roughness is 10.5 or less. ) Is 0.15 ⁇ m or less.
  • one surface on which the light emitting element is disposed is made of any one of Cu, Ag, Al, Cu alloy, Ag alloy, or Al alloy.
  • the first layer having excellent thermal conductivity compared to Fe or the Fe alloy is disposed on the light emitting element side, so that heat from the light emitting element is transferred to the first layer near the light emitting element. It is possible to diffuse quickly from the portion of the layer toward the portion of the first layer located away from the light emitting element.
  • the heat of the first layer can be quickly dissipated to an external heat dissipating member connected to the first layer or the outside air, so that heat is accumulated on the light emitting element substrate with improved heat dissipating performance in the vicinity of the light emitting element. Can be suppressed. As a result, it is possible to suppress the temperature of the light emitting element from rising due to the heat accumulated in the substrate for the light emitting element, thereby suppressing the luminance of the light emitting element from decreasing due to the temperature increase of the light emitting element, In addition, the life of the light emitting element can be extended.
  • the light emitting element substrate by providing the second layer made of Fe or Fe alloy, the light emitting element substrate has a larger coefficient of linear expansion than the second layer, such as Cu, Ag, Al.
  • the first layer has a smaller linear expansion coefficient than the first layer, and has a mechanical strength particularly under high temperature conditions. Since the light emitting element substrate has a multilayer structure using the second layer having a large thickness, the thermal expansion of the light emitting element substrate can be suppressed and the mechanical strength of the light emitting element substrate can be improved. .
  • the second layer is formed between the first layer and the third layer made of any one of Cu, Ag, Al, Cu alloy, Ag alloy, and Al alloy. And the second layer having a smaller linear expansion coefficient than that of the first layer and the third layer are sandwiched between the first layer and the third layer, whereby the substrate for a light emitting element is formed in the first layer. Unlike the case of only the layer and the second layer, it is possible to suppress the light emitting element substrate from being deformed so as to warp either the first layer side or the second layer side.
  • the pointed portion of the one surface where the light emitting element is disposed is reduced. can do.
  • the one surface so that the arithmetic average roughness (Ra) is 0.15 ⁇ m or less, the difference in height (undulation) of the unevenness on the one surface on which the light emitting element is arranged can be reduced. .
  • the third layer is made of the same metal material as the first layer. Therefore, it can suppress more that it deform
  • the 0.2% proof stress of the second layer is 250 MPa or more under a temperature condition of 200 ° C. or more and 400 ° C. or less.
  • the 0.2% proof stress of the second layer is maintained at 250 MPa or more even after being subjected to a high temperature condition of 200 ° C. or more and 400 ° C. or less. It can suppress reliably that intensity
  • the first layer is made of Cu or a Cu alloy, and on the one surface, a plating layer constituting a light reflecting layer capable of reflecting light from the light emitting element. Is formed. If comprised in this way, while the 1st layer which consists of Cu or Cu alloy which does not reflect light easily will be located, the plating layer which comprises a light reflection layer is formed on the one surface where a light emitting element is arrange
  • the kurtosis on the one surface is 10.5 or less, the pointed portion on the one surface is small, the arithmetic mean roughness on the one surface is 0.15 ⁇ m or less, and the undulation on the one surface is small, A high-quality plated layer having no defects can be formed thereon.
  • the third layer is made of the same metal material as the first layer, and the first layer and the third layer have the same thickness. If comprised in this way, while it consists of the same metal material and the 1st layer and 3rd layer which have the same thickness, the 2nd layer whose linear expansion coefficient is smaller than a 1st layer and a 3rd layer is inserted
  • the structure of the light emitting element substrate can be the same on the front and back, the light emitting element substrate can be configured so that it is not necessary to distinguish between the front and the back.
  • the first layer, the second layer, and the third layer form a plate-shaped substrate body, and the plate-shaped substrate body is heated in the plate surface direction.
  • the conductivity is 150 W / (m ⁇ K) or more, and the thermal conductivity in the plate thickness direction is 100 W / (m ⁇ K) or more. If comprised in this way, while being able to fully diffuse the heat
  • the first layer, the second layer, and the third layer form a plate-like substrate body, and the plate-like substrate body has a linear expansion coefficient of 17. ⁇ 10 ⁇ 6 / K or less. If comprised in this way, since the thermal expansion of the light emitting element use substrate can fully be suppressed, the deformation
  • the first layer and the third layer are both made of Cu, and the second layer is made of Fe. If comprised in this way, the 1st layer in the position away from the light emitting element from the part of the 1st layer in the vicinity of a light emitting element by the heat
  • the second layer is made of an Fe alloy, and the Fe alloy constituting the second layer contains at least one of Ni and Cr, and Ni and It consists of Fe alloy whose sum total with Cr is 10 mass% or less. If comprised in this way, the corrosion resistance of the 2nd layer which consists of Fe alloys can be improved by containing at least any one of Ni and Cr. Moreover, it can suppress that the heat conductivity of a 2nd layer becomes small too much by making the sum total of Ni and Cr of Fe alloy which comprises a 2nd layer into 10 mass% or less.
  • the first layer, the second layer, and the third layer form a plate-like substrate body, and the plate-like substrate body is a plate from the other surface side. Is bent so as to cover the surface of a plate-like base that supports the substrate body.
  • the light emitting element substrate can be arranged so as to cover the plate-like base, and therefore the surface area of the light emitting element substrate is increased compared to the case where the light emitting element substrate is not bent. Can be secured.
  • heat from the light emitting element can be quickly diffused from the first layer portion in the vicinity of the light emitting element toward the first layer portion in a wide range away from the light emitting element, and heat is radiated to the outside air over a wide range. Can be made. As a result, it is possible to further suppress the accumulation of heat on the light emitting element substrate in the vicinity of the light emitting element.
  • a light-emitting module is a light-emitting element, and is disposed on one surface on which the light-emitting element is disposed, and is made of any one of Cu, Ag, Al, Cu alloy, Ag alloy, or Al alloy.
  • a second layer is sandwiched between one layer, a second layer made of Fe or an Fe alloy, and the first layer, and is disposed on the other surface of Cu, Ag, Al, Cu alloy, Ag alloy, or Al alloy.
  • a light emitting element substrate including any one of the third layers, and one surface of the light emitting element substrate has a kurtosis (Rku) as an index indicating the surface roughness of 10.5 or less,
  • the arithmetic average roughness (Ra) as an index indicating the surface roughness is formed to be 0.15 ⁇ m or less.
  • the light emitting module according to the second aspect of the present invention can achieve the same effects as the light emitting element substrate according to the first aspect.
  • a method for manufacturing a light-emitting module wherein the light-emitting element is disposed on one surface and is made of any one of Cu, Ag, Al, Cu alloy, Ag alloy, or Al alloy.
  • the second layer is sandwiched between the layer, the second layer made of Fe or Fe alloy, and the first layer, and disposed on the other surface, and any of Cu, Ag, Al, Cu alloy, Ag alloy, or Al alloy And a third layer comprising one of them, while the surface has an arithmetic average roughness (Rku) of 10.5 or less as an index indicating the surface roughness, and an arithmetic average roughness as an index indicating the surface roughness (Rku)
  • the second layer made of Fe or Fe alloy. And a step of performing a heat treatment under a high temperature condition of 200 ° C. or more and 400 ° C. or less by a step of forming a substrate for a light emitting element including the step of performing a heat treatment under a temperature condition of 200 ° C. or more and 400 ° C. or less.
  • the 0.2% proof stress of the second layer does not decrease, the mechanical strength of the light emitting element substrate can be suppressed from decreasing. Thereby, it becomes possible to prevent the manufacture of the light-emitting module from being difficult due to the difficulty in handling the light-emitting element substrate having a reduced mechanical strength.
  • FIG. 6 is a cross-sectional view taken along line 600-600 in FIG.
  • FIG. 2 is an enlarged cross-sectional view of a lead frame in the vicinity of an LED element taken along line 600-600 in FIG.
  • FIG. 3 is an enlarged cross-sectional view of a lead frame around a connection layer taken along line 600-600 in FIG.
  • It is a perspective view for demonstrating the manufacturing process of the LED module by 1st Embodiment of this invention.
  • It is sectional drawing for demonstrating the manufacturing process of the LED module by 1st Embodiment of this invention.
  • It is a top view for demonstrating the manufacturing process of the LED module by 1st Embodiment of this invention.
  • FIG. 6 is an enlarged cross-sectional view of a lead frame in the vicinity of an LED element according to a second embodiment of the present invention. It is the figure which showed the result of the simulation at the time of using Cu for the 1st layer and 3rd layer which were performed in order to confirm the effect of 1st Embodiment of this invention. It is the figure which showed the result of the simulation at the time of using Cu for the 1st layer and 3rd layer which were performed in order to confirm the effect of 1st Embodiment of this invention.
  • the LED module 100 is an example of the “light emitting module” in the present invention.
  • the LED module 100 has one side (X1 side) connected to the Cu wiring 102a of the printed circuit board 102 via the solder 101a.
  • the other side (X2 side) is connected to the Cu wiring 102b of the printed circuit board 102 via the solder 101b.
  • a control unit not shown
  • the LED module 100 is covered with a plate-like lead frame 1 divided into an X1 side and an X2 side, an LED element 2 fixed on one surface 1a on the X1 side of the lead frame 1, and the lead frame 1. And a plate-like base 3. Further, as shown in FIG. 2, the base 3 has an upper surface 3a (surface on the Z1 side), both side surfaces 3b in the longitudinal direction (X direction), and part of the lower surface 3c (surface on the Z2 side). The other surface 1b of the frame 1 is covered.
  • the one surface 1 a of the lead frame 1 is a surface on the side where the LED elements 2 are arranged and the side (outside) facing the printed circuit board 102, and the other surface 1 b of the lead frame 1 is the upper surface of the base 3.
  • the lead frame 1 is an example of the “light emitting element substrate” in the present invention
  • the LED element 2 is an example of the “light emitting element” in the present invention
  • the upper surface 3a, the side surface 3b, and the lower surface 3c are examples of the “surface of the base” in the present invention.
  • the lead frame 1 includes a notch portion 10a formed on the upper surface 3a side (Z1 side) of the base 3 and on the X2 side from the central portion in the X direction. It is configured to be divided into an X1 side and an X2 side by a lower surface 3c side (Z2 side) of the table 3 and a notch portion 10b (see FIG. 2) formed in the central portion in the X direction and the periphery thereof. ing.
  • the notches 10a and 10b are both formed to extend in the Y direction (see FIG. 1).
  • the lead frame 1 is configured to cover a part of the base 3. Specifically, in the lead frame 1, the boundary between the upper surface 3 a of the base 3 and both side surfaces 3 b in the X direction and the boundary between the lower surface 3 c of the base 3 and both side surfaces 3 b in the X direction are the base 3. It is bent at a substantially right angle so as to follow. As a result, the lead frame 1 is bent along the vicinity of the end portion of the upper surface 3 a of the base 3, both side surfaces 3 b in the X direction, and part of the lower surface 3 c of the base 3.
  • the lead frame 1 has a substantially uniform thickness t1 (see FIG. 3) of about 0.1 mm to about 1.5 mm.
  • the thermal conductivity in the plate surface direction (direction orthogonal to the stacking direction) of the lead frame 1 is about 150 W / (m ⁇ K) or more, and the thermal conductivity in the plate thickness direction (stacking direction) of the lead frame 1.
  • the rate is configured to be about 100 W / (m ⁇ K) or more.
  • the linear expansion coefficient of the lead frame 1 is configured to be about 17 ⁇ 10 ⁇ 6 / K or less.
  • the LED element 2 is configured to emit light mainly from the upper surface (the surface on the Z1 side) upward (Z1 direction).
  • the LED element 2 is bonded to the one surface 1a on the X1 side of the lead frame 1 via an adhesive member 4 made of an insulating resin.
  • a pair of electrodes (not shown) formed on the upper surface side of the LED element 2 are electrically connected to the X1 side and the X2 side of the lead frame 1 via Au wires 5a and 5b, respectively.
  • the base 3 is made of white alumina (Al 2 O 3 ) having an insulating property and capable of reflecting light.
  • the base 3 is also formed inside the notches 10 a and 10 b of the lead frame 1. Thereby, insulation between the X1 side and the X2 side of the lead frame 1 is ensured. Furthermore, the base 3 disposed inside the notch 10a can reflect light emitted from the LED element 2 to the notch 10a below (Z2 side) upward (Z1 side). Is possible.
  • a reflector 6 is disposed on one surface 1 a of the lead frame 1 so as to surround the LED element 2.
  • the reflector 6 is made of alumina (Al 2 O 3 ) and has an opening that increases from the lower side (Z2 side) to the upper side (Z1 side). Thereby, the reflector 6 is comprised so that the light irradiated to the side side from the LED element 2 can be reflected toward upper direction (Z1 direction).
  • a sealing resin 7 made of a transparent silicon resin is disposed so as to cover the LED element 2 and the Au wires 5a and 5b.
  • the base 3 and the reflector 6 are formed by firing under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less. Further, the sealing resin 7 is formed by curing under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less.
  • the lead frame 1 includes a three-layer clad in which an outer Cu layer 11, an Fe layer 12, and an inner Cu layer 13 are roll-bonded to each other. It consists of a clad material having a structure. Both the outer Cu layer 11 and the inner Cu layer 13 are made of Cu having a purity of 99.9% or more, such as oxygen-free copper, tough pitch copper, and phosphorus deoxidized copper.
  • the Fe layer 12 is made of Fe alloy containing pure Fe or at least one of Ni and Cr, and the total of Ni and Cr is 10% by mass or less.
  • the outer Cu layer 11 is disposed on the one surface 1 a on the side (outer side) on which the LED element 2 is disposed, and the inner Cu layer 13 sandwiches the Fe layer 12 between the outer Cu layer 11. In this way, it is arranged on the other surface 1b on the base 3 side (inner side).
  • the outer Cu layer 11, the Fe layer 12, and the inner Cu layer 13 are examples of the “first layer”, “second layer”, and “third layer” of the present invention, respectively.
  • the thermal conductivity (about 80 W / (m ⁇ K)) of the Fe layer 12 is smaller than the thermal conductivity (about 400 W / (m ⁇ K)) of the outer Cu layer 11.
  • the heat transferred from the LED element 2 to the outer Cu layer 11 of the lead frame 1 is more easily transferred through the outer Cu layer 11 itself than from the outer Cu layer 11 to the Fe layer 12. That is, the heat of the outer Cu layer 11 near the LED element 2 is separated from the LED element 2 along the plate surface direction, rather than being transmitted in the Z2 direction in the order of the Fe layer 12 and the inner Cu layer 13 along the plate thickness direction. It is easy to be transmitted to the outer Cu layer 11 at the position.
  • the linear expansion coefficient (about 12 ⁇ 10 ⁇ 6 / K) of the Fe layer 12 is smaller than the linear expansion coefficients (about 17 ⁇ 10 ⁇ 6 / K) of the outer Cu layer 11 and the inner Cu layer 13. Further, Fe or Fe alloy constituting the Fe layer 12 has higher mechanical strength than Cu constituting the outer Cu layer 11 and the inner Cu layer 13.
  • the 0.2% yield strength of the Fe layer 12 is about 400 MPa or more, and a 0.2% yield strength of about 0.2% yield or more at about 200 ° C. It is comprised so that it may have. That is, the Fe layer 12 is configured not to be annealed under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less. Thereby, even after being placed under a high temperature condition of about 200 ° C. or higher and about 400 ° C. or lower, the mechanical strength of the entire lead frame 1 is suppressed from being lowered.
  • the thickness t2 of the outer Cu layer 11 and the thickness t3 of the inner Cu layer 13 are configured to be substantially the same thickness.
  • the one surface 1a on the outer Cu layer 11 side of the lead frame 1 has a kurtosis (Rku) as an index indicating the surface roughness of 10.5 or less over the entire surface, and arithmetic.
  • the average roughness (Ra) is formed to be 0.15 ⁇ m or less.
  • kurtosis is a kind of index indicating the surface roughness and indicating the sharpness of the uneven shape formed on the surface. Specifically, the kurtosis is obtained by dividing the fourth power of the height in the reference length by the fourth power of the root mean square height that means the standard deviation of the surface roughness. When the kurtosis is small, it means that the uneven shape of the surface is smooth, and when the kurtosis is large, it means that the uneven shape of the surface is sharply sharpened.
  • the arithmetic average roughness (Ra) is a kind of index indicating the surface roughness, and is obtained by calculating the average of the absolute values of the height in the reference length.
  • the arithmetic average roughness is small, it means that the difference in height of the surface irregularities is small (the undulation is small), and if the arithmetic average roughness is large, the difference in height of the irregularities on the surface Is large (the undulations are large).
  • the one surface 1a of the lead frame 1 is formed so that the concavo-convex shape is gentle due to the small kurtosis, and the undulation of the concavo-convex shape is small due to the small arithmetic average roughness.
  • a light reflection layer 14 (see FIG. 3) and a connection layer 15 (see FIG. 4) are formed on one surface 1a of the lead frame 1.
  • the light reflecting layer 14 is formed on the one surface 1 a of the portion corresponding to the upper surface 3 a of the base 3 in the one surface 1 a and in a region surrounded by the reflector 6.
  • the connection layer 15 is formed in a region where the solders 101a and 101b are disposed.
  • the connection layer 15 is formed on the one surface 1a of the portion corresponding to the lower surface 3c of the base 3 in the one surface 1a and the portions corresponding to both side surfaces 3b of the base 3 in the one surface 1a. Is formed on the lower one surface 1a.
  • the thickness t5 of the light reflecting layer 14 and the thickness t6 of the connection layer 15 are both about 0.5 ⁇ m or more and about 1.5 ⁇ m or less.
  • the light reflecting layer 14 is an example of the “plating layer” in the present invention.
  • the light reflection layer 14 is made of an Ag plating layer, and has a function of reflecting light irradiated downward (Z2 side) from the LED element 2 toward the upper side (Z1 side), and leads to the Au wires 5a and 5b. It is formed for easy connection with the frame 1.
  • the connection layer 15 has a structure in which a Ni plating layer and an Au plating layer (not shown) are sequentially laminated from the lead frame 1 side. This connection layer 15 is formed in order to improve the wettability of the lead frame 1 with respect to the solders 101a and 101b.
  • the light reflecting layer 14 and the connection layer 15 are both formed by plating.
  • the outer Cu layer 11 made of Cu is disposed on the one surface 1a on the side (outer side) on which the LED element 2 is disposed, thereby comparing with Fe or Fe alloy. Since the outer Cu layer 11 made of Cu having excellent thermal conductivity is disposed on the LED element 2 side, the heat from the LED element 2 is separated from the LED element 2 from the portion of the outer Cu layer 11 near the LED element 2. It is possible to diffuse quickly toward the portion of the outer Cu layer 11 at a certain position.
  • the heat of the outer Cu layer 11 can be quickly dissipated to an external heat dissipating member (printed circuit board 102) connected to the outer Cu layer 11 and the outside air, so that the heat dissipating performance near the LED element 2 is improved. Accumulation of heat in the frame 1 can be suppressed. As a result, it is possible to suppress the temperature of the LED element 2 from rising due to the heat accumulated in the lead frame 1, thereby suppressing the brightness of the LED element 2 from decreasing due to the temperature increase of the LED element 2. can do. Moreover, since it can suppress that the LED element 2 is exposed to abnormally high temperature for a long time, the lifetime of the LED element 2 can be achieved.
  • the Fe or Fe alloy constituting the Fe layer 12 has a mechanical strength higher than that of the Cu constituting the outer Cu layer 11 and the inner Cu layer 13, and the linear expansion coefficient of the Fe layer 12. by (about 12 ⁇ 10 -6 / K) is smaller than the linear expansion coefficient of the outer Cu layer 11 and the inner Cu layer 13 (about 17 ⁇ 10 -6 / K), compared lead frame 1 and the Fe layer 12
  • the outer Cu layer 11 and the Fe layer 12 having a smaller linear expansion coefficient than the outer Cu layer 11 and having a high mechanical strength under high temperature conditions, compared with a case where only Cu having a large linear expansion coefficient (Cu layer) is formed.
  • the lead frame 1 Since the lead frame 1 has a multi-layer structure using the above, the thermal expansion of the lead frame 1 can be suppressed and the mechanical strength of the lead frame 1 can be improved. As a result, the lead frame 1 can be prevented from being deformed due to thermal expansion or external force, so that the LED element 2 disposed on the one surface 1a of the lead frame 1 also accompanies the deformation of the lead frame 1. Application of stress can be suppressed. As a result, it is possible to suppress a decrease in luminance of the LED element 2 due to stress applied to the LED element 2 and a shortening of the life of the LED element 2.
  • the inner Cu layer 13 having the same thickness t3 as the outer Cu layer 11 and made of the same metal material (Cu) as the outer Cu layer 11 is used as the outer Cu layer 11.
  • the Fe layer 12 is sandwiched between them and disposed on the other surface 1b on the base 3 side (inner side) so that the outer Cu layer 11 and the inner side are made of the same metal material (Cu) and have substantially the same thickness.
  • the lead frame 1 is composed only of the outer Cu layer 11 and the Fe layer 12 by sandwiching the Fe layer 12 having a smaller linear expansion coefficient than the outer Cu layer 11 and the inner Cu layer 13 with the Cu layer 13, the lead It is possible to effectively suppress deformation of the frame 1 so as to warp either the outer Cu layer 11 side or the Fe layer 12 side.
  • the lead frame 1 can be configured so as not to distinguish between the front and the back.
  • the one surface 1a on the outer Cu layer 11 side of the lead frame 1 has a kurtosis (Rku) of 10.5 or less and an arithmetic average roughness (Ra) of 0.15 ⁇ m or less. It is formed as follows. Here, when the kurtosis of the one surface 1a is larger than 10.5 and a sharp portion is formed on the one surface 1a, or when the arithmetic average roughness of the one surface 1a is larger than 0.15 ⁇ m, the one surface 1a When the unevenness difference (undulation) is large (rough), the light reflection film 14 is broken when the light reflection film 14 is formed, and there is a high possibility that a plating defect will occur.
  • Rku kurtosis
  • Ra arithmetic average roughness
  • the light irradiated downward (Z2 direction) from the LED element 2 is not sufficiently reflected by the one surface 1a of the lead frame 1, and as a result, The light quantity of LED module 100 will fall.
  • the pointed portion of the one surface 1a on which the LED element 2 is disposed Since the undulation of the one surface 1a can be reduced, it is possible to form a high-quality light reflecting layer 14 and connection layer 15 having no defect on the one surface 1a. Thereby, since the light irradiated from the LED element 2 is fully reflected in the one surface 1a of the lead frame 1, it can suppress that the light quantity of the LED module 100 falls.
  • the total thickness of the outer Cu layer 11 and the inner Cu layer 13 is about 30% or more of the thickness t1 of the lead frame 1, so that the thermal conductivity is larger than that of the Fe layer 12.
  • the heat of the outer Cu layer 11 can be radiated more quickly to an external heat radiating member connected to the outer Cu layer 11 or to the outside air. It is preferable because heat can be effectively suppressed from being accumulated in the lead frame 1 in the vicinity of the LED element 2.
  • the total thickness of the outer Cu layer 11 and the inner Cu layer 13 is about 80% or less of the thickness t1 of the lead frame 1, the thickness t4 of the Fe layer 12 can be sufficiently secured.
  • the outer Cu layer 11 made of Cu that hardly reflects light is positioned, and the one surface 1a on which the LED element 2 is disposed. Since the light reflection layer 14 is formed thereon, the light from the LED element 2 can be reflected more.
  • the thermal conductivity in the plate surface direction (direction orthogonal to the stacking direction) of the lead frame 1 is set to about 150 W / (m ⁇ K) or more, and the thickness direction of the lead frame 1 ( The heat conductivity in the stacking direction) is about 100 W / (mxK) or more, so that the heat from the LED element 2 is not only the outer Cu layer 11 but also the Fe layer 12 and the inner Cu positioned in the plate thickness direction. It can be sufficiently diffused toward the layer 13 and can also be sufficiently diffused toward the Fe layer 12 and the inner Cu layer 13 in the plate surface direction. Thereby, the heat in the vicinity of the LED element 2 can be diffused by the entire lead frame 1, so that the heat can be further prevented from being accumulated in the lead frame 1 in the vicinity of the LED element 2.
  • the thermal expansion of the lead frame 1 can be sufficiently suppressed by setting the linear expansion coefficient of the lead frame 1 to about 17 ⁇ 10 ⁇ 6 / K or less.
  • the resulting deformation of the lead frame 1 can be sufficiently suppressed. Thereby, it can suppress effectively that the stress accompanying a deformation
  • the thermal expansion of the lead frame 1 can be further suppressed and the mechanical strength of the lead frame 1 is improved. be able to.
  • the Fe layer 12 when the Fe layer 12 includes at least one of Ni and Cr, and the Fe layer 12 is composed of an Fe alloy in which the total of Ni and Cr is 10% by mass or less, the corrosion resistance of the Fe layer 12 can be improved, and the thermal conductivity of the Fe layer 12 can be suppressed from becoming excessively small.
  • the lead frame 1 is bent along the vicinity of the end of the upper surface 3 a of the base 3, both side surfaces 3 b in the X direction, and a part of the lower surface 3 c of the base 3. Since the lead frame 1 can be disposed so as to cover the plate-like base 3, the surface area of the lead frame 1 can be secured larger than when the lead frame 1 is not bent. Thereby, the heat from the LED element 2 can be quickly diffused from the part of the outer Cu layer 11 in the vicinity of the LED element 2 toward the wide part of the outer Cu layer 11 away from the LED element 2 and wide. Since heat can be radiated to the outside air in a range, it is possible to further suppress heat from being accumulated in the lead frame 1 near the LED element 2.
  • FIG. 1 a manufacturing process of the LED module 100 according to the first embodiment of the present invention will be described with reference to FIGS. 2, 3, and 5 to 7.
  • FIG. 2 a manufacturing process of the LED module 100 according to the first embodiment of the present invention will be described with reference to FIGS. 2, 3, and 5 to 7.
  • FIG. 2 a manufacturing process of the LED module 100 according to the first embodiment of the present invention will be described with reference to FIGS. 2, 3, and 5 to 7.
  • a pair of Cu plates made of Cu having a predetermined width in the width direction (X direction) and extending in the rolling direction (Y direction) orthogonal to the X direction, and having substantially the same width as the Cu plate in the X direction.
  • an Fe plate extending in the Y direction is prepared.
  • the Cu plate is made of Cu having a purity of about 99.9% or more.
  • the Fe plate is made of Fe alloy containing pure Fe or at least one of Ni and Cr and the total of Ni and Cr being 10% by mass or less. At this time, the Fe plate is prepared so that the thickness thereof is about 20% or more and about 70% or less of the total thickness of the pair of Cu plate and Fe plate.
  • rollers 201a and 201b extending in the X direction.
  • a roller 201 a having a smooth roller surface is used as the roller 201 a that contacts the one surface 1 a (outer Cu layer 11) of the lead frame 1.
  • a roller 201a having a roller surface arithmetic average roughness (Ra) of about 0.05 ⁇ m or less is used.
  • the kurtosis (Rku) of the one surface 1a of the lead frame 1 is adjusted to 10.5 or less
  • the arithmetic average roughness (Ra) is adjusted to 0.15 ⁇ m or less.
  • a lead frame material 200 made of a clad material having a three-layer clad structure in which the outer Cu layer 11, the Fe layer 12, and the inner Cu layer 13 are joined by diffusion annealing the pair of Cu plate and Fe plate. Is formed.
  • the thickness t1 of the lead frame material 200 (lead frame 1) is about 0.1 mm to about 1.5 mm
  • the reflector 200 is disposed on the one surface 1a of the portion corresponding to the upper surface 3a of the base 3 of the one surface 1a of the lead frame material 200 (lead frame 1) and the reflector.
  • a light reflecting layer 14 made of an Ag plating layer is formed in a region surrounded by 6.
  • Connection layer 15 in which a Ni plating layer and an Au plating layer (not shown) are sequentially stacked on one lower surface 1a of the portion corresponding to both side surfaces 3b of the base 3.
  • the notch part 10a extended in a Y direction is formed in the lead frame material 200 by press work.
  • the base 3 and the reflector 6 are formed on the lead frame material 200 by insert molding. Specifically, as shown in FIG. 6, a mixture of alumina (Al 2 O 3 ) and a binder is injected into the mold 202 with the lead frame material 200 disposed in the mold 202 having a predetermined shape. To do. And a binder is removed by baking on about 200 degreeC or more and about 400 degrees C or less high temperature conditions. Thereby, the base 3 and the reflector 6 made of alumina are formed so as to have a shape corresponding to the shape of the mold 202. At this time, since the Fe layer 12 is not annealed under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less, the 0.2% yield strength of the Fe layer 12 is not less than 0.2% yield strength at about 200 ° C. It is maintained at 400 MPa or more. Thereby, it is suppressed that the mechanical strength of the whole lead frame 1 falls.
  • the LED element 2 is mounted on the surface of the light reflecting layer 14 formed on the one surface 1 a of the lead frame 1.
  • the lead frame 1 and the LED element 2 are bonded together by disposing an adhesive member 4 (see FIG. 2) made of an insulating resin between the light reflecting layer 14 and the LED element 2.
  • a pair of electrodes (not shown) formed on the upper surface side of the LED element 2 are connected to one end of the Au wire 5a and one end of the Au wire 5b by ultrasonic welding.
  • the X1 side and the X2 side of the one surface 1a of the lead frame 1 are connected to the other end of the Au wire 5a and the other end of the Au wire 5b by ultrasonic welding.
  • the lead frame 1 and the Au wires 5a and 5b can be easily connected.
  • a sealing resin 7 is disposed in a space formed by the reflector 6 and the lead frame 1 so as to cover the LED element 2 and the Au wires 5a and 5b. Then, the sealing resin 7 is cured under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less. At this time, as described above, since the Fe layer 12 is not annealed under a high temperature condition of about 200 ° C. or higher and about 400 ° C. or lower, the 0.2% proof stress of the Fe layer 12 is 0.2% proof stress or higher at about 200 ° C. And at about 400 MPa or more. Thereby, it is suppressed that the mechanical strength of the whole lead frame 1 falls. Thereby, as shown in FIG. 7, the lead frame material 200 provided with a plurality of portions corresponding to the LED module 100 is formed.
  • the lead frame material 200 is cut along the cutting lines 200a and 200b. Then, as shown in FIG. 2, the lead frame 1 positioned on the X1 side of the cutting line 200a is bent along the side surface 3b and the lower surface 3c on the X1 side of the base 3 on the X1 side, and the cutting line 200a.
  • the lead frame 1 located on the X2 side of the base 3 is bent along the side surface 3b and the lower surface 3c on the X2 side of the base 3. Thereby, the notch part 10b extended in a Y direction is formed, and the some LED module 100 is formed.
  • the LED module 100 is connected to the printed circuit board 102 on which the Cu wirings 102a and 102b are formed so that the solders 101a and 101b are positioned on the connection layer 15 formed on the one surface 1a of the lead frame 1.
  • the 0.2% proof stress of the Fe layer 12 is configured to be about 400 MPa or more under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less.
  • the Fe layer 12 is heat-treated under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less, after the manufacturing process formed by the base 3 and the reflector 6 and after the manufacturing process for curing the sealing resin 7. Since the 0.2% proof stress is maintained at about 400 MPa or more, the mechanical strength of the lead frame 1 can be prevented from being lowered. Thereby, it can suppress that manufacture of the LED module 100 becomes difficult resulting from it being easy to break the lead frame 1 with which mechanical strength fell at the time of handling.
  • the outer layer 311 made of Ag or Al is arranged on one surface 301a of the lead frame 301, and the other surface 301b is made of Ag or Al.
  • a case where the inner layer 313 is arranged will be described.
  • the LED module 300 is an example of the “light emitting module” in the present invention
  • the lead frame 301 is an example of the “light emitting element substrate” in the present invention.
  • the outer layer 311 and the inner layer 313 are examples of the “first layer” and the “third layer” in the present invention, respectively.
  • the lead frame 301 includes an outer layer 311 made of Ag or Al, an Fe layer 12, and an inner layer made of the same metal as the outer layer 311.
  • 313 is made of a clad material (see FIG. 9) having a three-layer clad structure that is roll-bonded to each other.
  • the inner layer 313 is disposed on the one surface 301a on the side (outer side) on which the LED element 2 is disposed, and the inner layer 313 is disposed on the other surface 301b on the base 3 side (inner side). Yes.
  • the thickness t2 of the outer layer 311 and the thickness t3 of the inner layer 313 are configured to be substantially the same thickness.
  • the thickness t2 of the outer layer 311 and the thickness t3 of the inner layer 313 are both about 15% or more and about 40% or less of the thickness t1 of the lead frame 301, and the total of the outer layer 311 and the inner layer 313.
  • the thermal conductivity of the outer layer 311 and the inner layer 313 is about 430 W / (m ⁇ K). Further, when both the outer layer 311 and the inner layer 313 are made of Al, the thermal conductivity of the outer layer 311 and the inner layer 313 is about 240 W / (m ⁇ K). That is, the thermal conductivity of the outer layer 311 and the inner layer 313 (approximately 430 W / (m ⁇ K) (Ag) in both cases where the outer layer 311 and the inner layer 313 are both made of Ag and both are made of Al.
  • both the outer layer 311 and the inner layer 313 are made of Ag, the coefficient of linear expansion of the outer layer 311 and the inner layer 313 is about 19 ⁇ 10 ⁇ 6 / K.
  • the coefficient of linear expansion of the outer layer 311 and the inner layer 313 is about 23.5 ⁇ 10 ⁇ 6 / K.
  • the linear expansion coefficients of the outer layer 311 and the inner layer 313 are larger than the linear expansion coefficient of the Fe layer 12 (about 12 ⁇ 10 ⁇ 6 / K).
  • Fe or Fe alloy constituting the Fe layer 12 has higher mechanical strength than Ag or Al constituting the outer layer 311 and the inner layer 313.
  • the outer layer 311 made of Ag or Al of the lead frame 301 has a property of easily reflecting light. Therefore, unlike the first embodiment, one surface of the lead frame 301 is provided. A light reflecting layer is not formed on 301a. That is, the LED element 2 is directly disposed on the one surface 301 a of the lead frame 301 via the adhesive member 4. Thereby, the manufacturing process for forming the light reflecting layer can be omitted.
  • the one surface 301a of the outer layer 311 of the lead frame 301 has a kurtosis (Rku) as an index indicating the surface roughness of 10.5 or less and an arithmetic average roughness (Ra) of 0 over the entire surface. .15 ⁇ m or less.
  • the other structure of 2nd Embodiment of this invention is the same as that of the said 1st Embodiment.
  • the manufacturing process of the LED module 300 of the second embodiment is the same as that described above except that a pair of Ag plates or a pair of Al plates is used instead of the pair of Cu plates and a light reflecting layer is not formed. This is the same as in the first embodiment.
  • the outer layer 311 made of Ag or Al is disposed on the one surface 301a that is the side (outer side) on which the LED element 2 is disposed, so that heat from the LED element 2 is generated. Since it can be rapidly diffused from the portion of the outer layer 311 near the LED element 2 toward the portion of the outer layer 311 far from the LED element 2, heat is accumulated in the lead frame 301 near the LED element 2. Can be suppressed. As a result, it is possible to suppress the temperature of the LED element 2 from rising due to the heat accumulated in the lead frame 301, and thus it is possible to suppress the brightness of the LED element 2 from decreasing due to the temperature increase of the LED element 2. In addition, the life of the LED element 2 can be extended.
  • the Fe or Fe alloy constituting the Fe layer 12 has a mechanical strength greater than that of Ag or Al constituting the outer layer 311 and the inner layer 313, and the linear expansion coefficient of the Fe layer 12. (About 12 ⁇ 10 ⁇ 6 / K) from the linear expansion coefficients (about 19 ⁇ 10 ⁇ 6 / K (Ag) and about 23.5 ⁇ 10 ⁇ 6 / K (Al)) of the outer layer 311 and the inner layer 313. Since the lead frame 301 can be prevented from being deformed due to thermal expansion or external force, the LED element 2 disposed on the one surface 301a of the lead frame 301 is also deformed. It can suppress that the stress accompanying is applied. As a result, it is possible to suppress a decrease in luminance of the LED element 2 due to stress applied to the LED element 2 and a shortening of the life of the LED element 2.
  • the inner layer 313 having the same thickness t3 as the outer layer 311 and made of the same metal material (Ag or Al) as the outer layer 311 is disposed between the outer layer 311 and the inner layer 313.
  • the lead frame 301 is deformed so as to warp either the outer layer 311 side or the Fe layer 12 side by placing the Fe layer 12 on the other surface 301b on the base 3 side (inner side). Can be effectively suppressed. Thereby, it can suppress that the stress accompanying a deformation
  • the entire surface of the one surface 301a of the outer layer 311 of the lead frame 301 has a kurtosis (Rku) of 10.5 or less and an arithmetic average roughness (Ra) of 0.15 ⁇ m.
  • Rku kurtosis
  • Ra arithmetic average roughness
  • Examples 1-1 to 1-9 corresponding to the lead frame 1 of the first embodiment, an outer Cu layer 11, an Fe layer 12, and an inner Cu layer 13 are laminated in the plate thickness direction.
  • the thickness t2 of the outer Cu layer 11 and the thickness t3 of the inner Cu layer 13 are the thickness t1 of the lead frame 1 (see FIG. 3). 3)), 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40% and 45%.
  • the ratio of the thickness occupied by Cu is 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, respectively. And 90% modeling. Therefore, in the lead frames 1 of Examples 1-1 to 1-9, the thickness t4 (see FIG. 3) of the Fe layer 12 is 90%, 80%, 70%, and 60% of the thickness t1 of the lead frame 1, respectively. , 50%, 40%, 30%, 20% and 10%.
  • Comparative Example 1-1 with respect to Examples 1-1 to 1-9, a lead frame made only of Fe (lead frame containing no Cu) was assumed.
  • Comparative Example 1-2 a lead frame made only of Cu (a lead frame containing no Fe) was assumed.
  • Examples 2-1 to 2-9 corresponding to the lead frame 301 of the second embodiment, an outer layer 311 made of Ag, an Fe layer 12 and an inner layer 313 made of Ag were laminated in the plate thickness direction.
  • a lead frame 301 made of a clad material having a three-layer structure joined in a state is assumed.
  • the thickness t2 of the outer layer 311 and the thickness t3 (see FIG. 9) of the inner layer 313 made of Ag are the thickness t1 of the lead frame 301 (see FIG. 9).
  • the case of 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40% and 45% of FIG. 9) was assumed.
  • the ratio of the thickness occupied by Ag in the lead frames 301 of Examples 2-1 to 2-9 is 10%, 20%, 30%, 40%, 50%, 60%, 70%, and 80%, respectively. And 90% modeling.
  • Comparative Example 2-1 with respect to Examples 2-1 to 2-9 a lead frame made only of Fe (lead frame containing no Ag) was assumed.
  • the comparative example 2-1 is the same as the comparative example 1-1.
  • Comparative Example 2-2 a lead frame made only of Ag (a lead frame containing no Fe) was assumed.
  • Examples 3-1 to 3-10 corresponding to the lead frame 301 of the second embodiment, an outer layer 311 made of Al, an Fe layer 12 and an inner layer 313 made of Al were laminated in the thickness direction.
  • a lead frame 301 made of a clad material having a three-layer structure joined in a state is assumed.
  • the thickness t2 of the outer layer 311 and the thickness t3 (see FIG. 9) of the inner layer 313 made of Al are the thickness t1 ( 5%, 10%, 15%, 20%, 22.5%, 25%, 30%, 35%, 40%, and 45%.
  • Comparative Example 3-1 compared with Examples 3-1 to 3-10, a lead frame made of only Fe (lead frame containing no Al) was assumed. Comparative Example 3-1 is the same as Comparative Examples 1-1 and 2-1. In addition, as Comparative Example 3-2, a lead frame made only of Al (lead frame containing no Fe) was assumed.
  • the thermal conductivity in the plate surface direction is 150 W / (m ⁇ K).
  • the thermal conductivity in the plate thickness direction was 100 W / (m ⁇ K) or more. From this result, it is considered that the heat in the vicinity of the LED element can be sufficiently diffused throughout the lead frame by setting the ratio of the thickness occupied by Cu to 30% or more.
  • the ratio of the thickness occupied by Cu in the lead frame is 90% or less (Examples 1-1 to 1-9 and Comparative Example 1-1), the linear expansion coefficient should be less than 17 ⁇ 10 ⁇ 6 / K. I understood.
  • the thermal expansion of the lead frame can be sufficiently suppressed by setting the ratio of the thickness occupied by Cu to 90% or less, so that the deformation of the lead frame due to the thermal expansion is sufficiently suppressed. It is considered possible to do.
  • the thermal conductivity in the plate surface direction is 150 W / (m ⁇ K).
  • the thermal conductivity in the plate thickness direction was 100 W / (m ⁇ K) or more. From this result, it is considered that the heat in the vicinity of the LED element can be sufficiently diffused throughout the lead frame by setting the ratio of the thickness occupied by Ag to 30% or more.
  • the ratio of the thickness occupied by Ag in the lead frame is 80% or less (Examples 2-1 to 2-8 and Comparative Example 2-1), the linear expansion coefficient is 17 ⁇ 10 ⁇ 6 / K or less. I understood.
  • the thermal expansion of the lead frame can be sufficiently suppressed by setting the ratio of the thickness occupied by Ag to 80% or less, so that the deformation of the lead frame due to the thermal expansion is sufficiently suppressed. It is considered possible to do.
  • the thermal conductivity in the plate surface direction is 150 W / (m ⁇ K).
  • the thermal conductivity in the plate thickness direction was 100 W / (m ⁇ K) or more. From this result, it is considered that the heat in the vicinity of the LED element can be sufficiently diffused throughout the lead frame by setting the ratio of the thickness occupied by Al to 45% or more.
  • the thermal conductivity in the plate surface direction is less than 150 W / (m ⁇ K) (126.1 W / (m ⁇ K).
  • the thermal conductivity in the thickness direction is less than 100 W / (m ⁇ K) (97.9 W / (m ⁇ K)) and the ratio of the thickness occupied by Al is 40% (Example 3- 4)
  • the thermal conductivity in the plate surface direction is less than 150 W / (m ⁇ K) (142.1 W / (m ⁇ K))
  • Al has a property close to Cu and Ag. It is considered that the heat in the vicinity of the LED element can be sufficiently diffused to the entire lead frame to some extent.
  • the linear expansion coefficient is 17 ⁇ 10 ⁇ 6 / K or less.
  • the thermal expansion of the lead frame can be sufficiently suppressed by setting the ratio of the thickness occupied by Al to 60% or less, so that the deformation of the lead frame due to the thermal expansion is sufficiently suppressed. It is considered possible to do.
  • the ratio of the thickness of Al in the lead frame is 70% or more and 80% or less (Examples 3-8 and 3-9), the linear expansion coefficient is larger than 17 ⁇ 10 ⁇ 6 / K (Examples).
  • 3-8 (17.1 ⁇ 10 ⁇ 6 / K) and Example 3-9 (18.6 ⁇ 10 ⁇ 6 / K) Al has properties close to that of Cu and Ag. It is considered that the thermal expansion of the lead frame can be suppressed.
  • the roller 201a (see FIG. 5) that contacts one surface 1a when the lead frame (lead frame material) of Comparative Example 1-3 is manufactured, the arithmetic average roughness (Ra) of the roller surface is 0. It rolled using the roller 201a which has a value of 19 micrometers or more and 0.30 micrometers or less. That is, in Comparative Example 1-3, the roller 201a having a large arithmetic average roughness on the roller surface was used while the arithmetic average roughness on the roller surface was not constant.
  • Example 1-10 rolling was performed using a roller 201a having an arithmetic average roughness of the roller surface of 0.05 ⁇ m. That is, in Example 1-10, the roller 201a having a smaller arithmetic average roughness on the roller surface than that of Comparative Example 1-3 was used.
  • Example 1-11 rolling was performed using a roller 201a having an arithmetic average roughness of the roller surface of 0.025 ⁇ m. That is, in Example 1-11, the roller 201a having a smaller arithmetic average roughness on the roller surface was used compared to Comparative Example 1-3 and Example 1-10.
  • Comparative Example 1-4 rolling was performed using a roller 201a having an arithmetic average roughness of the roller surface of 0.025 ⁇ m, and one surface 1a (see FIG. 5) of the lead frame after rolling was dry lapped. Polished.
  • the surface roughness of the one surface 1a of the lead frame was measured using a predetermined measuring device. And the arithmetic mean roughness (Ra) in a rolling direction (Y direction) and the width direction (X direction) and kurtosis (Rku) were each calculated using the obtained measurement result.
  • a plating solution is applied to one surface 1a on the side in contact with the roller 201a with respect to each of the lead frames of Example 1-10, Example 1-11, Comparative Example 1-3, and Comparative Example 1-4.
  • a plating layer corresponding to the light reflection layer 14 made of an Ag plating layer was formed.
  • the presence or absence of the defect of a plating layer was judged by observing the state of a plating layer.
  • Example 1-10 Example 1-11 and Comparative Example 1-4 using a roller 201a having a roller surface arithmetic mean roughness (Ra) of 0.05 ⁇ m or less, the arithmetic mean roughness It was found that the thickness (Ra) can be 0.15 ⁇ m or less.
  • Examples 1-10 and Example 1 except that the roller 201a having an arithmetic average roughness (Ra) of the roller surface of 0.025 ⁇ m or less is used and polishing is performed by dry lapping (Comparative Example 1-4). 11 and Comparative Example 1-3, it was found that kurtosis (Rku) could be 10.5 or less.
  • Example 1-10 and 1-11 no defects in the plating layer were observed.
  • the arithmetic average roughness (Ra) of the roller surface is 0.05 ⁇ m or less, which is sufficiently small, so that the lead frame 1 (the surface of the roller 201a is in contact)
  • the one surface 1a of the lead frame material 200 is considered to have an arithmetic average roughness of 0.15 ⁇ m or less and a kurtosis of 10.5 or less.
  • the one surface 1a can be formed so that the uneven shape is gentle and the undulations are small, and it is considered that no defect occurred in the plating layer formed on the one surface 1a.
  • Comparative Examples 1-3 and 1-4 defects in the plating layer were observed. This is because, in Comparative Example 1-3, the arithmetic average roughness (Ra) of the roller surface is 0.19 ⁇ m or more and 0.30 ⁇ m or less, so that the surface of the roller 201a is in contact with the lead frame (lead frame material). On the other hand, it is considered that the unevenness of the concavo-convex shape of the one surface 1a is increased according to the surface of the roller 201a. As a result, it is considered that a defect occurred in the plating layer formed on the one surface 1a due to the uneven shape having large undulations.
  • the arithmetic average roughness (Ra) of the roller surface is 0.19 ⁇ m or more and 0.30 ⁇ m or less, so that the surface of the roller 201a is in contact with the lead frame (lead frame material).
  • the unevenness of the concavo-convex shape of the one surface 1a is increased according to the surface of the roller
  • the arithmetic average roughness of the one surface 1a can be further reduced by rolling with the roller 201a and then polishing by dry lapping, but the uneven shape of the one surface 1a tends to be sharp. It is thought that it has become. As a result, it is considered that a defect occurred in the plating layer formed on the one surface 1a due to the sharp uneven shape.
  • the lead frame 1 As a result, as in Examples 1-10 and 1-11, by rolling using the roller 201a having an arithmetic average roughness of the roller surface of 0.05 ⁇ m or less and not polishing by dry lapping, the lead frame 1 On the other hand, it was found that the arithmetic average roughness of the surface 1a can be 0.15 ⁇ m or less and the kurtosis can be 10.5 or less. Furthermore, by forming the one surface 1a having an arithmetic average roughness of 0.15 ⁇ m or less and a kurtosis of 10.5 or less, it is possible to form a high-quality plated layer having no defects on the one surface 1a. It turned out to be.
  • the lead frame 1 is manufactured by the manufacturing method as in Examples 1-10 and 1-11, the light irradiated from the laser element 2 is sufficiently reflected on the one surface 1a of the lead frame 1. As a result, it is considered possible to suppress a decrease in the light amount of the LED module 100.
  • the lead frame 1 with the Fe layer 12 made of Fe that does not decrease the 0.2% proof stress even under high temperature conditions of 200 ° C. or higher and 400 ° C. or lower, It has also been found that it is possible to suppress a decrease in the mechanical strength of the lead frame 1.
  • the lead frame 1 (301) is formed near the end of the upper surface 3a of the base 3, the both side surfaces 3b in the X direction, and a part of the lower surface 3c of the base 3.
  • the present invention is not limited to this.
  • the lead frame 401 of the LED module 400 does not cover the lower surface 3 c of the base 3 and moves away from the base 3. It may be bent. Further, the lead frame may be disposed only on the upper surface of the base without being bent.
  • the LED module 400 is an example of the “light emitting module” in the present invention
  • the lead frame 401 is an example of the “light emitting element substrate” in the present invention.
  • the present invention is not limited to this.
  • the thick plate corresponding to the upper surface 3 a of the base 3 on which the LED element 2 is arranged in the lead frame 501 of the LED module 500 You may make the thickness of the part 501c larger than the thickness of another area
  • the lead frame 501 in the thick plate portion 501c has a three-layer structure (see FIG. 3) of the outer Cu layer 11, the Fe layer 12, and the inner Cu layer 13.
  • the lead frame 501 in the thin plate portion 501d may be made of the same material as that of the thick plate portion 501c and may have a three-layer structure of the outer Cu layer 11, the Fe layer 12, and the inner Cu layer 13. Further, the lead frame 501 in the thin plate portion 501d may be only the inner Cu layer 13 or may have a two-layer structure of the Fe layer 12 and the inner Cu layer 13.
  • the LED module 500 is an example of the “light emitting module” in the present invention
  • the lead frame 501 is an example of the “light emitting element substrate” in the present invention.
  • the outer Cu layer 11 and the inner Cu layer 13 are made of Cu having a purity of 99.9% or more.
  • the outer Cu layer 11 and the inner Cu layer 13 are made of Cu-2.
  • C19400 (CDA standard) made of 30Fe-0.10Zn-0.03P, Cu-0.1Fe-0.03P, Cu-0.2Zr, and other Cu alloys having a Cu purity of 99.9% or less You may comprise as follows. This facilitates processing such as press processing on the lead frame, and further improves the mechanical strength of the lead frame under high temperature conditions.
  • the outer layer 311 and the inner layer 313 are made of Ag or Al.
  • the outer layer 311 and the inner layer 313 are Ag alloys containing elements other than Ag and Ag, or other than Al and Al. You may comprise so that it may consist of Al alloy containing these elements. This facilitates processing such as press processing on the lead frame, and further improves the mechanical strength of the lead frame under high temperature conditions.
  • the outer Cu layer 11 (first layer) and the inner Cu layer 13 (third layer) are both made of Cu.
  • the outer layer 311 (first layer) is shown.
  • the combination of the first layer and the third layer may be Cu and Ag, Cu and Al, Ag and Cu, Ag and Al, Al and Cu, Al and Ag, respectively.
  • Cu may be a Cu alloy
  • Ag may be an Ag alloy
  • Al may be an Al alloy.
  • the 0.2% proof stress of the Fe layer 12 is about 400 MPa or more under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less.
  • the invention is not limited to this.
  • the 0.2% yield strength of the Fe layer 12 may be about 250 MPa or more under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less.
  • the 0.2% proof stress of the Fe layer 12 is preferably about 400 MPa or more under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less.
  • the one surface 1a on the outer Cu layer 11 side of the lead frame 1 has a kurtosis (Rku) of 10.5 or less over the entire surface, and an arithmetic average roughness (Ra).
  • Rku kurtosis
  • Ra arithmetic average roughness
  • the example formed so that it may become 0.15 micrometer or less was shown, this invention is not limited to this.
  • at least the region where the light reflecting layer 14 is formed on one surface 1a of the lead frame 1 is formed so that the kurtosis is 10.5 or less and the arithmetic average roughness is 0.15 ⁇ m or less. May be.
  • the light reflecting layer 14 made of the Ag plating layer is formed by contacting with the plating solution containing Ag is shown, but the present invention is not limited to this.
  • the light reflecting layer 14 may be formed by applying an Ag paste on the one surface 1 a of the lead frame 1.
  • the one surface 1a has a kurtosis of 10.5 or less and an arithmetic average roughness of 0.15 ⁇ m or less.
  • the light reflecting layer 14 may be constituted by a plated layer of a metal material other than Ag such as an Al plated layer.
  • the base 3 and the reflector 6 is an example made of alumina (Al 2 O 3), the present invention is not limited thereto.
  • the lead frame 1 (301) is used in the LED module 100 (300) having the LED element 2 has been described.
  • the present invention is not limited to this.
  • the lead frame 1 (301) may be used for a laser element module that emits laser light.
  • Lead frame (light emitting element substrate) 1a, 301a One surface 1b, 301b

Abstract

This substrate (1) for light emitting elements is provided with: a first layer (11) that is formed of Cu, Ag, Al, an Cu alloy, an Ag alloy or an Al alloy and a second layer (12) that is formed of Fe or an Fe alloy, said layers being arranged on one surface (1a), on which a light emitting element (2) is arranged; and a third layer (13) that is formed of Cu, Ag, Al, an Cu alloy, an Ag alloy or an Al alloy and arranged on the other surface (1b). The surface (1a) is formed to have a kurtosis (Rku) of 10.5 or less and an arithmetic mean roughness (Ra) of 0.15 μm or less.

Description

発光素子用基板、発光モジュールおよび発光モジュールの製造方法Light emitting element substrate, light emitting module, and method of manufacturing light emitting module
　この発明は、発光素子用基板、発光モジュールおよび発光モジュールの製造方法に関し、特に、発光素子が配置される発光素子用基板、その発光素子用基板を備える発光モジュールおよび発光モジュールの製造方法に関する。 The present invention relates to a light emitting element substrate, a light emitting module, and a method for manufacturing a light emitting module, and more particularly to a light emitting element substrate on which a light emitting element is disposed, a light emitting module including the light emitting element substrate, and a method for manufacturing a light emitting module.
　従来、発光素子が配置される発光素子用基板が知られている。このような発光素子用基板は、たとえば、特開２００３－１３３５９６号公報に開示されている。 Conventionally, a light emitting element substrate on which a light emitting element is disposed is known. Such a light emitting element substrate is disclosed in, for example, Japanese Patent Laid-Open No. 2003-133596.
　上記特開２００３－１３３５９６号には、金属基板（発光素子用基板）と、金属基板の表面上に凹部を形成するように配置された絶縁層と、金属基板の表面上で、かつ、凹部内に配置されたＬＥＤ（発光素子）と、ＬＥＤと絶縁層上の回路パターンとを接続するボンディングワイヤと、凹部内に充填される透明封止材とを備えるＬＥＤ表示装置が開示されている。このＬＥＤ表示装置の金属基板は、シャーシなどに固定されることによって、ＬＥＤが配置される基板としての機械的な強度を確保しつつ、シャーシなどに熱を逃がすように構成されている。ここで、上記特開２００３－１３３５９６号では、金属基板として、Ａｌ、ＣｕおよびＦｅのいずれか、上記金属材料を２種類あるいは３種類含むクラッド材、または、上記金属材料を含む合金を材料とするものが例示されている。しかしながら、上記特開２００３－１３３５９６号には、金属基板が複数の金属材料からなる場合の具体的な構成（金属基板を構成する各金属材料（金属層）の種類、厚さ、組合せの順序など）についてはなんら開示されていない。 In the above Japanese Patent Application Laid-Open No. 2003-133596, a metal substrate (light emitting element substrate), an insulating layer arranged so as to form a recess on the surface of the metal substrate, a surface of the metal substrate, and in the recess An LED display device is disclosed that includes an LED (light emitting element) disposed on the substrate, a bonding wire that connects the LED and a circuit pattern on an insulating layer, and a transparent sealing material that fills the recess. The metal substrate of this LED display device is configured to release heat to the chassis or the like while securing mechanical strength as a substrate on which the LEDs are arranged by being fixed to the chassis or the like. In JP-A-2003-133596, the metal substrate is made of any one of Al, Cu and Fe, a clad material containing two or three kinds of the metal material, or an alloy containing the metal material. Things are illustrated. However, the above Japanese Patent Application Laid-Open No. 2003-133596 discloses a specific configuration in the case where the metal substrate is made of a plurality of metal materials (type, thickness, order of combination, etc. of each metal material (metal layer) constituting the metal substrate). ) Is not disclosed at all.
特開２００３－１３３５９６号公報JP 2003-133596 A
　ここで、ＬＥＤ表示装置の金属基板を、特開２００３－１３３５９６号に例示されるＡｌ、Ｃｕ、Ｆｅのいずれか、またはこれらの金属を２種類あるいは３種類含むクラッド材で構成する場合であっても、金属基板の具体的な構成によっては、放熱性能が十分に得られない場合もありうる。金属基板の放熱性能が十分でない場合には、ＬＥＤの熱が金属基板を介してシャーシ側に十分に伝えられずに、ＬＥＤ付近の金属基板に蓄積されると考えられる。このため、ＬＥＤから金属基板に熱を伝えることが困難になりＬＥＤの温度が上昇する。この結果、ＬＥＤの輝度が低下するとともに、ＬＥＤの寿命が短くなるという問題点がある。また、ＬＥＤ表示装置を製造する際の熱処理温度によっては、金属基板の機械的強度が低下し、取り扱い時に金属基板が破損しやすくなり、ＬＥＤ表示装置の製造に支障をきたすという問題点もある。 Here, when the metal substrate of the LED display device is composed of any one of Al, Cu, Fe exemplified in JP-A-2003-133596, or a clad material containing two or three of these metals. However, depending on the specific configuration of the metal substrate, sufficient heat dissipation performance may not be obtained. When the heat dissipation performance of the metal substrate is not sufficient, it is considered that the heat of the LED is not sufficiently transmitted to the chassis side through the metal substrate but is accumulated on the metal substrate in the vicinity of the LED. For this reason, it is difficult to transfer heat from the LED to the metal substrate, and the temperature of the LED rises. As a result, there is a problem that the luminance of the LED is lowered and the lifetime of the LED is shortened. In addition, depending on the heat treatment temperature at the time of manufacturing the LED display device, the mechanical strength of the metal substrate is lowered, the metal substrate is easily damaged during handling, and there is a problem that the manufacture of the LED display device is hindered.
　この発明は、上記のような課題を解決するためになされたものであり、この発明の目的は、発光素子用基板の放熱性能を向上させて発光素子の温度上昇に起因する輝度の低下を抑制し、加えて十分な機械的強度を確保することが可能な発光素子用基板、その発光素子用基板を備える発光モジュールおよび発光モジュールの製造方法を提供することである。 The present invention has been made to solve the above-described problems, and an object of the present invention is to improve the heat dissipation performance of the substrate for the light-emitting element and to suppress the decrease in luminance caused by the temperature rise of the light-emitting element. In addition, a light-emitting element substrate capable of ensuring sufficient mechanical strength, a light-emitting module including the light-emitting element substrate, and a method for manufacturing the light-emitting module are provided.
　この発明の第１の局面による発光素子用基板は、発光素子が配置される一方表面に配置され、Ｃｕ、Ａｇ、Ａｌ、Ｃｕ合金、Ａｇ合金またはＡｌ合金のいずれか１つからなる第１層と、ＦｅまたはＦｅ合金からなる第２層と、第１層との間に第２層を挟み込むとともに、他方表面に配置され、Ｃｕ、Ａｇ、Ａｌ、Ｃｕ合金、Ａｇ合金またはＡｌ合金のいずれか１つからなる第３層とを備え、一方表面は、表面粗さを示す指標としてのクルトシス（Ｒｋｕ）が１０．５以下になるとともに、表面粗さを示す指標としての算術平均粗さ（Ｒａ）が０．１５μｍ以下になるように形成されている。 A substrate for a light-emitting element according to a first aspect of the present invention is disposed on a surface on which a light-emitting element is disposed, and is a first layer made of any one of Cu, Ag, Al, Cu alloy, Ag alloy, or Al alloy. And the second layer made of Fe or Fe alloy, and the second layer sandwiched between the first layer and disposed on the other surface, either Cu, Ag, Al, Cu alloy, Ag alloy or Al alloy And a surface having an arithmetic average roughness (Ra) as an index indicating the surface roughness, while the kurtosis (Rku) as an index indicating the surface roughness is 10.5 or less. ) Is 0.15 μm or less.
　この発明の第１の局面による発光素子用基板では、上記のように、発光素子が配置される一方表面に、Ｃｕ、Ａｇ、Ａｌ、Ｃｕ合金、Ａｇ合金またはＡｌ合金のいずれか１つからなる第１層を配置することによって、ＦｅまたはＦｅ合金と比較して熱伝導性に優れた第１層が発光素子側に配置されているので、発光素子からの熱を、発光素子付近の第１層の部分から発光素子から離れた位置の第１層の部分に向けて迅速に拡散させることができる。これにより、第１層に接続された外部の放熱部材や外気に第１層の熱を迅速に放熱させることができるので、発光素子付近の放熱性能が向上した発光素子用基板に熱が蓄積されることを抑制することができる。この結果、発光素子用基板に蓄積された熱により発光素子の温度が上昇することを抑制することができるので、発光素子の温度上昇に起因して発光素子の輝度が低下することを抑制し、かつ、発光素子の長寿命化を図ることができる。 In the light emitting element substrate according to the first aspect of the present invention, as described above, one surface on which the light emitting element is disposed is made of any one of Cu, Ag, Al, Cu alloy, Ag alloy, or Al alloy. By disposing the first layer, the first layer having excellent thermal conductivity compared to Fe or the Fe alloy is disposed on the light emitting element side, so that heat from the light emitting element is transferred to the first layer near the light emitting element. It is possible to diffuse quickly from the portion of the layer toward the portion of the first layer located away from the light emitting element. As a result, the heat of the first layer can be quickly dissipated to an external heat dissipating member connected to the first layer or the outside air, so that heat is accumulated on the light emitting element substrate with improved heat dissipating performance in the vicinity of the light emitting element. Can be suppressed. As a result, it is possible to suppress the temperature of the light emitting element from rising due to the heat accumulated in the substrate for the light emitting element, thereby suppressing the luminance of the light emitting element from decreasing due to the temperature increase of the light emitting element, In addition, the life of the light emitting element can be extended.
　また、上記第１の局面による発光素子用基板では、ＦｅまたはＦｅ合金からなる第２層を備えることによって、発光素子用基板が第２層と比較して線膨張係数の大きいＣｕ、Ａｇ、Ａｌ、Ｃｕ合金、Ａｇ合金またはＡｌ合金のいずれか１つ（１層）のみからなる場合と比べて、第１層と、第１層よりも線膨張係数が小さく特に高温条件下で機械的な強度が大きい第２層とを用いて発光素子用基板を多層構造としているので、発光素子用基板の熱膨張を抑制することができるとともに、発光素子用基板の機械的な強度を向上させることができる。これにより、熱膨張や外力に起因して発光素子用基板が変形することを抑制することができるので、発光素子用基板の一方表面上に配置された発光素子にも発光素子用基板の変形に伴う応力が加わることを抑制することができる。この結果、発光素子に応力が加わることに起因する発光素子の輝度の低下、および、発光素子の短寿命化を抑制することができる。 Moreover, in the light emitting element substrate according to the first aspect, by providing the second layer made of Fe or Fe alloy, the light emitting element substrate has a larger coefficient of linear expansion than the second layer, such as Cu, Ag, Al. Compared to the case of only one (single layer) of Cu alloy, Ag alloy or Al alloy, the first layer has a smaller linear expansion coefficient than the first layer, and has a mechanical strength particularly under high temperature conditions. Since the light emitting element substrate has a multilayer structure using the second layer having a large thickness, the thermal expansion of the light emitting element substrate can be suppressed and the mechanical strength of the light emitting element substrate can be improved. . As a result, it is possible to prevent the light emitting element substrate from being deformed due to thermal expansion or external force, so that the light emitting element disposed on one surface of the light emitting element substrate is also deformed. It is possible to suppress the accompanying stress. As a result, it is possible to suppress a decrease in luminance of the light emitting element due to stress applied to the light emitting element and a shortening of the lifetime of the light emitting element.
　また、上記第１の局面による発光素子用基板では、Ｃｕ、Ａｇ、Ａｌ、Ｃｕ合金、Ａｇ合金またはＡｌ合金のいずれか１つからなる第３層を、第１層との間に第２層を挟み込むとともに他方表面に配置することによって、第１層と第３層とによって、第１層および第３層よりも線膨張係数が小さい第２層を挟み込むことにより、発光素子用基板が第１層および第２層のみからなる場合と異なり、発光素子用基板が第１層側または第２層側のいずれか一方に反るように変形することを抑制することができる。これにより、発光素子用基板の一方表面上に配置された発光素子にも発光素子用基板の変形に伴う応力が加わることを抑制することができる。この結果、発光素子に応力が加わることに起因する発光素子の輝度の低下、および、発光素子の短寿命化を抑制することができる。 In the light emitting device substrate according to the first aspect, the second layer is formed between the first layer and the third layer made of any one of Cu, Ag, Al, Cu alloy, Ag alloy, and Al alloy. And the second layer having a smaller linear expansion coefficient than that of the first layer and the third layer are sandwiched between the first layer and the third layer, whereby the substrate for a light emitting element is formed in the first layer. Unlike the case of only the layer and the second layer, it is possible to suppress the light emitting element substrate from being deformed so as to warp either the first layer side or the second layer side. Thereby, it can suppress that the stress accompanying the deformation | transformation of the board | substrate for light emitting elements is added also to the light emitting element arrange | positioned on the one surface of the board | substrate for light emitting elements. As a result, it is possible to suppress a decrease in luminance of the light emitting element due to stress applied to the light emitting element and a shortening of the lifetime of the light emitting element.
　また、上記第１の局面による発光素子用基板では、一方表面をクルトシス（Ｒｋｕ）が１０．５以下になるように形成することによって、発光素子が配置される一方表面の尖っている部分を少なくすることができる。さらに、一方表面を算術平均粗さ（Ｒａ）が０．１５μｍ以下になるように形成することによって、発光素子が配置される一方表面の凹凸の高さの差（起伏）を小さくすることができる。これらによって、一方表面上に欠陥のない良質なメッキ層を形成することができるとともに、発光素子用基板が発光素子の光を反射する反射板の機能を兼ねる場合に、一方表面において十分に発光素子の光を反射することができる。 Further, in the light emitting element substrate according to the first aspect described above, by forming the one surface so that the kurtosis (Rku) is 10.5 or less, the pointed portion of the one surface where the light emitting element is disposed is reduced. can do. Further, by forming the one surface so that the arithmetic average roughness (Ra) is 0.15 μm or less, the difference in height (undulation) of the unevenness on the one surface on which the light emitting element is arranged can be reduced. . By these, it is possible to form a high-quality plated layer having no defects on one surface, and when the substrate for the light emitting element also serves as a reflector for reflecting the light of the light emitting element, the light emitting element is sufficiently formed on the one surface. Can reflect the light.
　上記第１の局面による発光素子用基板において、好ましくは、第３層は、第１層と同一の金属材料で構成している。これにより、発光素子用基板が第１層側または第２層側のいずれか一方に反るように変形することをより抑制することができる。 In the light emitting element substrate according to the first aspect, preferably, the third layer is made of the same metal material as the first layer. Thereby, it can suppress more that it deform | transforms so that the board | substrate for light emitting elements may warp either the 1st layer side or the 2nd layer side.
　上記第１の局面による発光素子用基板において、好ましくは、２００℃以上４００℃以下の温度条件下において、第２層の０．２％耐力は、２５０ＭＰａ以上であるように構成されている。このように構成すれば、２００℃以上４００℃以下の高温条件下におかれた後においても第２層の０．２％耐力が２５０ＭＰａ以上に保持されるので、発光素子用基板の機械的な強度が低下することを確実に抑制することができる。これにより、機械的な強度が低下した発光素子用基板が取り扱い時に破損しやすくなることに起因して発光モジュールの製造が困難になることを効果的に抑制することができる。 In the light emitting element substrate according to the first aspect, preferably, the 0.2% proof stress of the second layer is 250 MPa or more under a temperature condition of 200 ° C. or more and 400 ° C. or less. With this configuration, the 0.2% proof stress of the second layer is maintained at 250 MPa or more even after being subjected to a high temperature condition of 200 ° C. or more and 400 ° C. or less. It can suppress reliably that intensity | strength falls. Accordingly, it is possible to effectively suppress the difficulty in manufacturing the light emitting module due to the light emitting element substrate having reduced mechanical strength that is easily damaged during handling.
　上記第１の局面による発光素子用基板において、好ましくは、第１層は、ＣｕまたはＣｕ合金からなり、一方表面上には、発光素子からの光を反射可能な光反射層を構成するメッキ層が形成されている。このように構成すれば、光を反射しにくいＣｕまたはＣｕ合金からなる第１層が位置するとともに、発光素子が配置される一方表面上に、光反射層を構成するメッキ層が形成されているので、発光素子からの光をよりよく反射させることができる。また、一方表面のクルトシスが１０．５以下であり、一方表面の尖っている部分が少ないとともに、一方表面の算術平均粗さが０．１５μｍ以下であり、一方表面の起伏が小さいので、一方表面上に欠陥のない良質なメッキ層を形成することができる。 In the light emitting element substrate according to the first aspect, preferably, the first layer is made of Cu or a Cu alloy, and on the one surface, a plating layer constituting a light reflecting layer capable of reflecting light from the light emitting element. Is formed. If comprised in this way, while the 1st layer which consists of Cu or Cu alloy which does not reflect light easily will be located, the plating layer which comprises a light reflection layer is formed on the one surface where a light emitting element is arrange | positioned. Therefore, the light from the light emitting element can be reflected better. Further, the kurtosis on the one surface is 10.5 or less, the pointed portion on the one surface is small, the arithmetic mean roughness on the one surface is 0.15 μm or less, and the undulation on the one surface is small, A high-quality plated layer having no defects can be formed thereon.
　上記第１の局面による発光素子用基板において、好ましくは、第３層は、第１層と同一の金属材料からなり、第１層と第３層とは、同一の厚みを有する。このように構成すれば、同一の金属材料からなるとともに、同一の厚みを有する第１層と第３層とによって、第１層および第３層よりも線膨張係数が小さい第２層を挟み込むことにより、発光素子用基板が第１層側または第２層側のいずれか一方に反るように変形することを効果的に抑制することができる。また、発光素子用基板の構造を表裏で同一にすることができるので、発光素子用基板を表裏の区別が不要なように構成することができる。 In the light emitting element substrate according to the first aspect, preferably, the third layer is made of the same metal material as the first layer, and the first layer and the third layer have the same thickness. If comprised in this way, while it consists of the same metal material and the 1st layer and 3rd layer which have the same thickness, the 2nd layer whose linear expansion coefficient is smaller than a 1st layer and a 3rd layer is inserted | pinched Accordingly, it is possible to effectively suppress the light emitting element substrate from being deformed so as to warp either the first layer side or the second layer side. In addition, since the structure of the light emitting element substrate can be the same on the front and back, the light emitting element substrate can be configured so that it is not necessary to distinguish between the front and the back.
　上記第１の局面による発光素子用基板において、好ましくは、第１層、第２層および第３層によって板状の基板本体が構成されており、板状の基板本体は、板面方向の熱伝導率が１５０Ｗ／（ｍ×Ｋ）以上になるとともに、板厚方向の熱伝導率が１００Ｗ／（ｍ×Ｋ）以上になるように構成されている。このように構成すれば、発光素子からの熱を、第１層だけでなく板厚方向に位置する第２層および第３層に向けても十分に拡散させることができるとともに、板面方向の第２層および第３層に向けても十分に拡散させることができる。これにより、発光素子付近の熱を、発光素子用基板の全体により拡散させることができるので、発光素子付近の発光素子用基板に熱が蓄積されることをより抑制することができる。 In the light emitting element substrate according to the first aspect, preferably, the first layer, the second layer, and the third layer form a plate-shaped substrate body, and the plate-shaped substrate body is heated in the plate surface direction. The conductivity is 150 W / (m × K) or more, and the thermal conductivity in the plate thickness direction is 100 W / (m × K) or more. If comprised in this way, while being able to fully diffuse the heat | fever from a light emitting element not only to a 1st layer but to the 2nd layer and 3rd layer located in a plate | board thickness direction, It can be sufficiently diffused toward the second layer and the third layer. As a result, the heat in the vicinity of the light emitting element can be diffused throughout the light emitting element substrate, so that it is possible to further suppress the accumulation of heat in the light emitting element substrate in the vicinity of the light emitting element.
　上記第１の局面による発光素子用基板において、好ましくは、第１層、第２層および第３層によって板状の基板本体が構成されており、板状の基板本体は、線膨張係数が１７×１０－６／Ｋ以下になるように構成されている。このように構成すれば、発光素子用基板の熱膨張を十分に抑制することができるので、熱膨張に起因する発光素子用基板の変形を十分に抑制することができる。これにより、発光素子用基板の一方表面上に配置された発光素子に発光素子用基板の変形に伴う応力が加わることを効果的に抑制することができる。 In the light emitting element substrate according to the first aspect, preferably, the first layer, the second layer, and the third layer form a plate-like substrate body, and the plate-like substrate body has a linear expansion coefficient of 17. × 10 −6 / K or less. If comprised in this way, since the thermal expansion of the light emitting element use substrate can fully be suppressed, the deformation | transformation of the light emitting element use substrate resulting from a thermal expansion can fully be suppressed. Thereby, it can suppress effectively that the stress accompanying the deformation | transformation of the board | substrate for light emitting elements is added to the light emitting element arrange | positioned on the one surface of the board | substrate for light emitting elements.
　上記第１の局面による発光素子用基板において、好ましくは、第１層および第３層は、共にＣｕからなり、第２層は、Ｆｅからなる。このように構成すれば、第１層が熱伝導性に優れたＣｕからなることによって、発光素子からの熱を、発光素子付近の第１層の部分から発光素子から離れた位置の第１層の部分に向けてより迅速に拡散させることができるので、第１層に接続された外部の放熱部材や外気に第１層の熱を迅速に放熱させることができる。また、Ｆｅからなる第２層を用いることによって、発光素子用基板の熱膨張をより抑制することができるとともに、発光素子用基板の機械的な強度を向上させることができる。また、第３層が第１層と同じＣｕからなることによって、発光素子用基板が第１層側または第２層側のいずれか一方に反るように変形することをより抑制することができる。 In the light emitting element substrate according to the first aspect, preferably, the first layer and the third layer are both made of Cu, and the second layer is made of Fe. If comprised in this way, the 1st layer in the position away from the light emitting element from the part of the 1st layer in the vicinity of a light emitting element by the heat | fever from a light emitting element by the 1st layer consisting of Cu excellent in heat conductivity. Therefore, the heat of the first layer can be quickly dissipated to the external heat dissipating member connected to the first layer and the outside air. Further, by using the second layer made of Fe, the thermal expansion of the light emitting element substrate can be further suppressed, and the mechanical strength of the light emitting element substrate can be improved. In addition, since the third layer is made of the same Cu as the first layer, it is possible to further suppress the light emitting element substrate from being deformed so as to warp either the first layer side or the second layer side. .
　上記第１の局面による発光素子用基板において、好ましくは、第２層は、Ｆｅ合金からなり、第２層を構成するＦｅ合金は、ＮｉおよびＣｒの少なくともいずれか一方を含有するとともに、ＮｉとＣｒとの合計が１０質量％以下であるＦｅ合金からなる。このように構成すれば、ＮｉおよびＣｒの少なくともいずれか一方を含有することによって、Ｆｅ合金からなる第２層の耐食性を向上させることができる。また、第２層を構成するＦｅ合金のＮｉとＣｒとの合計を１０質量％以下にすることによって、第２層の熱伝導率が過度に小さくなることを抑制することができる。 In the light emitting element substrate according to the first aspect, preferably, the second layer is made of an Fe alloy, and the Fe alloy constituting the second layer contains at least one of Ni and Cr, and Ni and It consists of Fe alloy whose sum total with Cr is 10 mass% or less. If comprised in this way, the corrosion resistance of the 2nd layer which consists of Fe alloys can be improved by containing at least any one of Ni and Cr. Moreover, it can suppress that the heat conductivity of a 2nd layer becomes small too much by making the sum total of Ni and Cr of Fe alloy which comprises a 2nd layer into 10 mass% or less.
　上記第１の局面による発光素子用基板において、好ましくは、第１層、第２層および第３層によって板状の基板本体が構成されており、板状の基板本体は、他方表面側から板状の基板本体を支持する板状の基台の表面を覆うように折り曲げられている。このように構成すれば、板状の基台を覆うように発光素子用基板を配置することができるので、発光素子用基板が折り曲げられていない場合と比べて、発光素子用基板の表面積を大きく確保することができる。これにより、発光素子からの熱を、発光素子付近の第１層の部分から発光素子から離れた広範囲の第１層の部分に向けて迅速に拡散させることができるとともに、広い範囲で外気に放熱させることができる。この結果、発光素子付近の発光素子用基板に熱が蓄積されることをより抑制することができる。 In the light emitting element substrate according to the first aspect, preferably, the first layer, the second layer, and the third layer form a plate-like substrate body, and the plate-like substrate body is a plate from the other surface side. Is bent so as to cover the surface of a plate-like base that supports the substrate body. With this configuration, the light emitting element substrate can be arranged so as to cover the plate-like base, and therefore the surface area of the light emitting element substrate is increased compared to the case where the light emitting element substrate is not bent. Can be secured. As a result, heat from the light emitting element can be quickly diffused from the first layer portion in the vicinity of the light emitting element toward the first layer portion in a wide range away from the light emitting element, and heat is radiated to the outside air over a wide range. Can be made. As a result, it is possible to further suppress the accumulation of heat on the light emitting element substrate in the vicinity of the light emitting element.
　この発明の第２の局面による発光モジュールは、発光素子と、発光素子が配置される一方表面に配置され、Ｃｕ、Ａｇ、Ａｌ、Ｃｕ合金、Ａｇ合金またはＡｌ合金のいずれか１つからなる第１層と、ＦｅまたはＦｅ合金からなる第２層と、第１層との間に第２層を挟み込むとともに、他方表面に配置され、Ｃｕ、Ａｇ、Ａｌ、Ｃｕ合金、Ａｇ合金またはＡｌ合金のいずれか１つからなる第３層とを含む発光素子用基板とを備え、発光素子用基板の一方表面は、表面粗さを示す指標としてのクルトシス（Ｒｋｕ）が１０．５以下になるとともに、表面粗さを示す指標としての算術平均粗さ（Ｒａ）が０．１５μｍ以下になるように形成されている。 A light-emitting module according to a second aspect of the present invention is a light-emitting element, and is disposed on one surface on which the light-emitting element is disposed, and is made of any one of Cu, Ag, Al, Cu alloy, Ag alloy, or Al alloy. A second layer is sandwiched between one layer, a second layer made of Fe or an Fe alloy, and the first layer, and is disposed on the other surface of Cu, Ag, Al, Cu alloy, Ag alloy, or Al alloy. A light emitting element substrate including any one of the third layers, and one surface of the light emitting element substrate has a kurtosis (Rku) as an index indicating the surface roughness of 10.5 or less, The arithmetic average roughness (Ra) as an index indicating the surface roughness is formed to be 0.15 μm or less.
　この発明の第２の局面による発光モジュールでは、上記第１の局面による発光素子用基板と同様の効果を得ることができる。 The light emitting module according to the second aspect of the present invention can achieve the same effects as the light emitting element substrate according to the first aspect.
　この発明の第３の局面による発光モジュールの製造方法は、発光素子が配置される一方表面に配置され、Ｃｕ、Ａｇ、Ａｌ、Ｃｕ合金、Ａｇ合金またはＡｌ合金のいずれか１つからなる第１層と、ＦｅまたはＦｅ合金からなる第２層と、第１層との間に第２層を挟み込むとともに、他方表面に配置され、Ｃｕ、Ａｇ、Ａｌ、Ｃｕ合金、Ａｇ合金またはＡｌ合金のいずれか１つからなる第３層とを含み、一方表面が、表面粗さを示す指標としてのクルトシス（Ｒｋｕ）が１０．５以下になるとともに、表面粗さを示す指標としての算術平均粗さ（Ｒａ）が０．１５μｍ以下になるように形成された発光素子用基板を形成する工程と、２００℃以上４００℃以下の温度条件下で熱処理を行う工程と、発光素子用基板の一方表面上に発光素子を配置する工程とを備える。 According to a third aspect of the present invention, there is provided a method for manufacturing a light-emitting module, wherein the light-emitting element is disposed on one surface and is made of any one of Cu, Ag, Al, Cu alloy, Ag alloy, or Al alloy. The second layer is sandwiched between the layer, the second layer made of Fe or Fe alloy, and the first layer, and disposed on the other surface, and any of Cu, Ag, Al, Cu alloy, Ag alloy, or Al alloy And a third layer comprising one of them, while the surface has an arithmetic average roughness (Rku) of 10.5 or less as an index indicating the surface roughness, and an arithmetic average roughness as an index indicating the surface roughness (Rku) A step of forming a substrate for a light emitting element formed so that Ra) is 0.15 μm or less, a step of performing a heat treatment under a temperature condition of 200 ° C. or more and 400 ° C. or less, and on one surface of the substrate for a light emitting element Light emitting element is arranged And a step of.
　この発明の第３の局面による発光モジュールの製造方法では、上記第１の局面による発光素子用基板および第２の局面による発光モジュールと同様の効果に加えて、ＦｅまたはＦｅ合金からなる第２層を含む発光素子用基板を形成する工程と、２００℃以上４００℃以下の温度条件下で熱処理を行う工程とを備えることによって、２００℃以上４００℃以下の高温条件下で熱処理を行う工程の後においても第２層の０．２％耐力は低下しないので、発光素子用基板の機械的な強度が低下することを抑制することができる。これにより、機械的な強度が低下した発光素子用基板の取り扱いが困難になることに起因して発光モジュールの製造が困難になることを抑制することができる。 In the method for manufacturing a light emitting module according to the third aspect of the present invention, in addition to the same effects as the light emitting element substrate according to the first aspect and the light emitting module according to the second aspect, the second layer made of Fe or Fe alloy. And a step of performing a heat treatment under a high temperature condition of 200 ° C. or more and 400 ° C. or less by a step of forming a substrate for a light emitting element including the step of performing a heat treatment under a temperature condition of 200 ° C. or more and 400 ° C. or less. However, since the 0.2% proof stress of the second layer does not decrease, the mechanical strength of the light emitting element substrate can be suppressed from decreasing. Thereby, it becomes possible to prevent the manufacture of the light-emitting module from being difficult due to the difficulty in handling the light-emitting element substrate having a reduced mechanical strength.
　本発明によれば、上記のように、発光素子の輝度が低下することを抑制し、かつ、発光素子の長寿命化を図ることができる。 According to the present invention, as described above, it is possible to suppress a decrease in luminance of the light emitting element and to extend the life of the light emitting element.
本発明の第１実施形態によるＬＥＤモジュールの構成を示した平面図である。It is the top view which showed the structure of the LED module by 1st Embodiment of this invention. 図１の６００－６００線に沿った断面図である。FIG. 6 is a cross-sectional view taken along line 600-600 in FIG. 図１の６００－６００線に沿ったＬＥＤ素子付近のリードフレームの拡大断面図である。FIG. 2 is an enlarged cross-sectional view of a lead frame in the vicinity of an LED element taken along line 600-600 in FIG. 図１の６００－６００線に沿った接続層周辺のリードフレームの拡大断面図である。FIG. 3 is an enlarged cross-sectional view of a lead frame around a connection layer taken along line 600-600 in FIG. 本発明の第１実施形態によるＬＥＤモジュールの製造プロセスを説明するための斜視図である。It is a perspective view for demonstrating the manufacturing process of the LED module by 1st Embodiment of this invention. 本発明の第１実施形態によるＬＥＤモジュールの製造プロセスを説明するための断面図である。It is sectional drawing for demonstrating the manufacturing process of the LED module by 1st Embodiment of this invention. 本発明の第１実施形態によるＬＥＤモジュールの製造プロセスを説明するための平面図である。It is a top view for demonstrating the manufacturing process of the LED module by 1st Embodiment of this invention. 本発明の第２実施形態によるＬＥＤモジュールの構成を示した断面図である。It is sectional drawing which showed the structure of the LED module by 2nd Embodiment of this invention. 本発明の第２実施形態によるＬＥＤ素子付近のリードフレームの拡大断面図である。FIG. 6 is an enlarged cross-sectional view of a lead frame in the vicinity of an LED element according to a second embodiment of the present invention. 本発明の第１実施形態の効果を確認するために行った第１層および第３層にＣｕを用いた場合のシミュレーションの結果を示した図である。It is the figure which showed the result of the simulation at the time of using Cu for the 1st layer and 3rd layer which were performed in order to confirm the effect of 1st Embodiment of this invention. 本発明の第１実施形態の効果を確認するために行った第１層および第３層にＣｕを用いた場合のシミュレーションの結果を示した図である。It is the figure which showed the result of the simulation at the time of using Cu for the 1st layer and 3rd layer which were performed in order to confirm the effect of 1st Embodiment of this invention. 本発明の第２実施形態の効果を確認するために行った第１層および第３層にＡｇを用いた場合のシミュレーションの結果を示した図である。It is the figure which showed the result of the simulation at the time of using Ag for the 1st layer and 3rd layer which were performed in order to confirm the effect of 2nd Embodiment of this invention. 本発明の第２実施形態の効果を確認するために行った第１層および第３層にＡｇを用いた場合のシミュレーションの結果を示した図である。It is the figure which showed the result of the simulation at the time of using Ag for the 1st layer and 3rd layer which were performed in order to confirm the effect of 2nd Embodiment of this invention. 本発明の第２実施形態の効果を確認するために行った第１層および第３層にＡｌを用いた場合のシミュレーションの結果を示した図である。It is the figure which showed the result of the simulation at the time of using Al for the 1st layer and 3rd layer which were performed in order to confirm the effect of 2nd Embodiment of this invention. 本発明の第２実施形態の効果を確認するために行った第１層および第３層にＡｌを用いた場合のシミュレーションの結果を示した図である。It is the figure which showed the result of the simulation at the time of using Al for the 1st layer and 3rd layer which were performed in order to confirm the effect of 2nd Embodiment of this invention. 本発明の第１実施形態の効果を確認するために行った表面粗さの確認実験の結果を示した図である。It is the figure which showed the result of the confirmation experiment of the surface roughness performed in order to confirm the effect of 1st Embodiment of this invention. 本発明の第１実施形態の効果を確認するために行った０．２％耐力の確認実験の結果を示した図である。It is the figure which showed the result of the confirmation experiment of 0.2% yield strength performed in order to confirm the effect of 1st Embodiment of this invention. 本発明の第１実施形態の効果を確認するために行った０．２％耐力の確認実験の結果を示した図である。It is the figure which showed the result of the confirmation experiment of 0.2% yield strength performed in order to confirm the effect of 1st Embodiment of this invention. 本発明の第１実施形態の第１変形例によるＬＥＤモジュールの構成を示した断面図である。It is sectional drawing which showed the structure of the LED module by the 1st modification of 1st Embodiment of this invention. 本発明の第１実施形態の第２変形例によるＬＥＤモジュールの構成を示した断面図である。It is sectional drawing which showed the structure of the LED module by the 2nd modification of 1st Embodiment of this invention.
　以下、本発明の実施形態を図面に基づいて説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
　（第１実施形態）
　まず、図１～図４を参照して、本発明の第１実施形態によるＬＥＤモジュール１００の構造について説明する。なお、ＬＥＤモジュール１００は、本発明の「発光モジュール」の一例である。 (First embodiment)
First, the structure of the LED module 100 according to the first embodiment of the present invention will be described with reference to FIGS. The LED module 100 is an example of the “light emitting module” in the present invention.
　本発明の第１実施形態によるＬＥＤモジュール１００は、図１および図２に示すように、一方側（Ｘ１側）が、半田１０１ａを介してプリント基板１０２のＣｕ配線１０２ａに接続されているとともに、他方側（Ｘ２側）が、半田１０１ｂを介してプリント基板１０２のＣｕ配線１０２ｂに接続されている。これにより、プリント基板１０２に別途接続された制御部（図示せず）により、ＬＥＤモジュール１００の発光が制御されるように構成されている。 As shown in FIGS. 1 and 2, the LED module 100 according to the first embodiment of the present invention has one side (X1 side) connected to the Cu wiring 102a of the printed circuit board 102 via the solder 101a. The other side (X2 side) is connected to the Cu wiring 102b of the printed circuit board 102 via the solder 101b. Thereby, the light emission of the LED module 100 is controlled by a control unit (not shown) separately connected to the printed circuit board 102.
　また、ＬＥＤモジュール１００は、Ｘ１側とＸ２側とに分かれた板状のリードフレーム１と、リードフレーム１のＸ１側の一方表面１ａ上に固定されたＬＥＤ素子２と、リードフレーム１に覆われた板状の基台３とを含んでいる。また、図２に示すように、基台３は、上面３ａ（Ｚ１側の面）と、長手方向（Ｘ方向）の両側面３ｂと、下面３ｃ（Ｚ２側の面）の一部とがリードフレーム１の他方表面１ｂに覆われている。なお、リードフレーム１の一方表面１ａは、ＬＥＤ素子２が配置される側およびプリント基板１０２と対向する側（外側）の表面であるとともに、リードフレーム１の他方表面１ｂは、基台３の上面３ａ、両側面３ｂおよび下面３ｃと接する側（内側）の表面である。なお、リードフレーム１は、本発明の「発光素子用基板」の一例であり、ＬＥＤ素子２は、本発明の「発光素子」の一例である。また、上面３ａ、側面３ｂおよび下面３ｃは、本発明の「基台の表面」の一例である。 The LED module 100 is covered with a plate-like lead frame 1 divided into an X1 side and an X2 side, an LED element 2 fixed on one surface 1a on the X1 side of the lead frame 1, and the lead frame 1. And a plate-like base 3. Further, as shown in FIG. 2, the base 3 has an upper surface 3a (surface on the Z1 side), both side surfaces 3b in the longitudinal direction (X direction), and part of the lower surface 3c (surface on the Z2 side). The other surface 1b of the frame 1 is covered. The one surface 1 a of the lead frame 1 is a surface on the side where the LED elements 2 are arranged and the side (outside) facing the printed circuit board 102, and the other surface 1 b of the lead frame 1 is the upper surface of the base 3. 3a, both side surfaces 3b and the lower surface 3c. The lead frame 1 is an example of the “light emitting element substrate” in the present invention, and the LED element 2 is an example of the “light emitting element” in the present invention. The upper surface 3a, the side surface 3b, and the lower surface 3c are examples of the “surface of the base” in the present invention.
　リードフレーム１は、図１および図２に示すように、基台３の上面３ａ側（Ｚ１側）で、かつ、Ｘ方向の中央部よりもＸ２側に形成された切り欠き部１０ａと、基台３の下面３ｃ側（Ｚ２側）で、かつ、Ｘ方向の中央部およびその周辺に形成された切り欠き部１０ｂ（図２参照）とによって、Ｘ１側とＸ２側とに分かれるように構成されている。また、切り欠き部１０ａおよび１０ｂは、共にＹ方向（図１参照）に延びるように形成されている。 As shown in FIGS. 1 and 2, the lead frame 1 includes a notch portion 10a formed on the upper surface 3a side (Z1 side) of the base 3 and on the X2 side from the central portion in the X direction. It is configured to be divided into an X1 side and an X2 side by a lower surface 3c side (Z2 side) of the table 3 and a notch portion 10b (see FIG. 2) formed in the central portion in the X direction and the periphery thereof. ing. The notches 10a and 10b are both formed to extend in the Y direction (see FIG. 1).
　また、図２に示すように、リードフレーム１は、基台３の一部を覆うように構成されている。具体的には、リードフレーム１において、基台３の上面３ａとＸ方向の両側面３ｂとの境界と、基台３の下面３ｃとＸ方向の両側面３ｂとの境界とが、基台３に沿うように略直角に折り曲げられている。これにより、リードフレーム１は、基台３の上面３ａの端部近傍と、Ｘ方向の両側面３ｂと、基台３の下面３ｃの一部とに沿うように折り曲げられている。 Further, as shown in FIG. 2, the lead frame 1 is configured to cover a part of the base 3. Specifically, in the lead frame 1, the boundary between the upper surface 3 a of the base 3 and both side surfaces 3 b in the X direction and the boundary between the lower surface 3 c of the base 3 and both side surfaces 3 b in the X direction are the base 3. It is bent at a substantially right angle so as to follow. As a result, the lead frame 1 is bent along the vicinity of the end portion of the upper surface 3 a of the base 3, both side surfaces 3 b in the X direction, and part of the lower surface 3 c of the base 3.
　また、リードフレーム１は、約０．１ｍｍ以上約１．５ｍｍ以下の略一様の厚みｔ１（図３参照）を有している。また、リードフレーム１の板面方向（積層方向に直交する方向）の熱伝導率は、約１５０Ｗ／（ｍ×Ｋ）以上であるとともに、リードフレーム１の板厚方向（積層方向）の熱伝導率は、約１００Ｗ／（ｍ×Ｋ）以上であるように構成されている。さらに、リードフレーム１の線膨張係数は、約１７×１０－６／Ｋ以下であるように構成されている。 The lead frame 1 has a substantially uniform thickness t1 (see FIG. 3) of about 0.1 mm to about 1.5 mm. In addition, the thermal conductivity in the plate surface direction (direction orthogonal to the stacking direction) of the lead frame 1 is about 150 W / (m × K) or more, and the thermal conductivity in the plate thickness direction (stacking direction) of the lead frame 1. The rate is configured to be about 100 W / (m × K) or more. Further, the linear expansion coefficient of the lead frame 1 is configured to be about 17 × 10 −6 / K or less.
　ＬＥＤ素子２は、図２に示すように、上面（Ｚ１側の面）から、主に上方（Ｚ１方向）に向かって光を照射するように構成されている。また、ＬＥＤ素子２は、リードフレーム１のＸ１側の一方表面１ａ上に、絶縁性樹脂からなる接着部材４を介して接着されている。また、ＬＥＤ素子２の上面側に形成された図示しない一対の電極は、Ａｕワイヤ５ａおよび５ｂを介して、リードフレーム１のＸ１側およびＸ２側にそれぞれ電気的に接続されている。 As shown in FIG. 2, the LED element 2 is configured to emit light mainly from the upper surface (the surface on the Z1 side) upward (Z1 direction). The LED element 2 is bonded to the one surface 1a on the X1 side of the lead frame 1 via an adhesive member 4 made of an insulating resin. Further, a pair of electrodes (not shown) formed on the upper surface side of the LED element 2 are electrically connected to the X1 side and the X2 side of the lead frame 1 via Au wires 5a and 5b, respectively.
　基台３は、絶縁性を有するとともに、光を反射可能な白色のアルミナ（Ａｌ２Ｏ３）からなる。また、基台３は、リードフレーム１の切り欠き部１０ａおよび１０ｂの内部にも形成されている。これにより、リードフレーム１のＸ１側とＸ２側との絶縁が確保されている。さらに、切り欠き部１０ａの内部に配置された基台３によって、ＬＥＤ素子２から下方（Ｚ２側）の切り欠き部１０ａに照射された光を、上方（Ｚ１側）に向かって反射することが可能である。 The base 3 is made of white alumina (Al 2 O 3 ) having an insulating property and capable of reflecting light. The base 3 is also formed inside the notches 10 a and 10 b of the lead frame 1. Thereby, insulation between the X1 side and the X2 side of the lead frame 1 is ensured. Furthermore, the base 3 disposed inside the notch 10a can reflect light emitted from the LED element 2 to the notch 10a below (Z2 side) upward (Z1 side). Is possible.
　また、図１および図２に示すように、リードフレーム１の一方表面１ａ上には、ＬＥＤ素子２を囲うようにリフレクタ６が配置されている。このリフレクタ６は、アルミナ（Ａｌ２Ｏ３）からなるとともに、下方（Ｚ２側）から上方（Ｚ１側）に向かって開口が大きくなるように構成されている。これにより、リフレクタ６は、ＬＥＤ素子２から側方側に照射された光を、上方（Ｚ１方向）に向かって反射することが可能なように構成されている。また、リフレクタ６とリードフレーム１とによって形成される空間には、ＬＥＤ素子２とＡｕワイヤ５ａおよび５ｂとを覆うように、透明なシリコン樹脂からなる封止樹脂７が配置されている。 As shown in FIGS. 1 and 2, a reflector 6 is disposed on one surface 1 a of the lead frame 1 so as to surround the LED element 2. The reflector 6 is made of alumina (Al 2 O 3 ) and has an opening that increases from the lower side (Z2 side) to the upper side (Z1 side). Thereby, the reflector 6 is comprised so that the light irradiated to the side side from the LED element 2 can be reflected toward upper direction (Z1 direction). In a space formed by the reflector 6 and the lead frame 1, a sealing resin 7 made of a transparent silicon resin is disposed so as to cover the LED element 2 and the Au wires 5a and 5b.
　なお、基台３およびリフレクタ６は、約２００℃以上約４００℃以下の高温条件下で焼成されることにより形成されている。また、封止樹脂７は、約２００℃以上約４００℃以下の高温条件下で硬化させることにより形成されている。 The base 3 and the reflector 6 are formed by firing under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less. Further, the sealing resin 7 is formed by curing under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less.
　ここで、第１実施形態では、リードフレーム１は、図３および図４に示すように、外側Ｃｕ層１１と、Ｆｅ層１２と、内側Ｃｕ層１３とが互いに圧延接合された３層のクラッド構造を有するクラッド材からなる。なお、外側Ｃｕ層１１および内側Ｃｕ層１３は、共に、無酸素銅、タフピッチ銅およびリン脱酸銅などの純度９９．９％以上のＣｕからなる。また、Ｆｅ層１２は、純Ｆｅ、または、ＮｉおよびＣｒの少なくともいずれか一方を含有するとともに、ＮｉとＣｒとの合計が１０質量％以下であるＦｅ合金からなる。また、外側Ｃｕ層１１は、ＬＥＤ素子２が配置される側（外側）である一方表面１ａに配置されているとともに、内側Ｃｕ層１３は、外側Ｃｕ層１１との間にＦｅ層１２を挟み込むように基台３側（内側）の他方表面１ｂに配置されている。なお、外側Ｃｕ層１１、Ｆｅ層１２および内側Ｃｕ層１３は、それぞれ、本発明の「第１層」、「第２層」および「第３層」の一例である。 Here, in the first embodiment, as shown in FIGS. 3 and 4, the lead frame 1 includes a three-layer clad in which an outer Cu layer 11, an Fe layer 12, and an inner Cu layer 13 are roll-bonded to each other. It consists of a clad material having a structure. Both the outer Cu layer 11 and the inner Cu layer 13 are made of Cu having a purity of 99.9% or more, such as oxygen-free copper, tough pitch copper, and phosphorus deoxidized copper. The Fe layer 12 is made of Fe alloy containing pure Fe or at least one of Ni and Cr, and the total of Ni and Cr is 10% by mass or less. The outer Cu layer 11 is disposed on the one surface 1 a on the side (outer side) on which the LED element 2 is disposed, and the inner Cu layer 13 sandwiches the Fe layer 12 between the outer Cu layer 11. In this way, it is arranged on the other surface 1b on the base 3 side (inner side). The outer Cu layer 11, the Fe layer 12, and the inner Cu layer 13 are examples of the “first layer”, “second layer”, and “third layer” of the present invention, respectively.
　また、Ｆｅ層１２の熱伝導率（約８０Ｗ／（ｍ×Ｋ））は、外側Ｃｕ層１１の熱伝導率（約４００Ｗ／（ｍ×Ｋ））よりも小さい。これにより、ＬＥＤ素子２からリードフレーム１の外側Ｃｕ層１１に伝えられた熱は、外側Ｃｕ層１１からＦｅ層１２に伝わるよりも、外側Ｃｕ層１１自体を伝わりやすい。つまり、ＬＥＤ素子２付近の外側Ｃｕ層１１の熱は、板厚方向に沿ってＦｅ層１２および内側Ｃｕ層１３の順にＺ２方向に伝わるよりも、板面方向に沿ってＬＥＤ素子２から離れた位置の外側Ｃｕ層１１に伝わりやすい。 Further, the thermal conductivity (about 80 W / (m × K)) of the Fe layer 12 is smaller than the thermal conductivity (about 400 W / (m × K)) of the outer Cu layer 11. Thereby, the heat transferred from the LED element 2 to the outer Cu layer 11 of the lead frame 1 is more easily transferred through the outer Cu layer 11 itself than from the outer Cu layer 11 to the Fe layer 12. That is, the heat of the outer Cu layer 11 near the LED element 2 is separated from the LED element 2 along the plate surface direction, rather than being transmitted in the Z2 direction in the order of the Fe layer 12 and the inner Cu layer 13 along the plate thickness direction. It is easy to be transmitted to the outer Cu layer 11 at the position.
　また、Ｆｅ層１２の線膨張係数（約１２×１０－６／Ｋ）は、外側Ｃｕ層１１および内側Ｃｕ層１３の線膨張係数（約１７×１０－６／Ｋ）よりも小さい。また、Ｆｅ層１２を構成するＦｅまたはＦｅ合金は、外側Ｃｕ層１１および内側Ｃｕ層１３を構成するＣｕよりも、機械的な強度が大きい。 Further, the linear expansion coefficient (about 12 × 10 −6 / K) of the Fe layer 12 is smaller than the linear expansion coefficients (about 17 × 10 −6 / K) of the outer Cu layer 11 and the inner Cu layer 13. Further, Fe or Fe alloy constituting the Fe layer 12 has higher mechanical strength than Cu constituting the outer Cu layer 11 and the inner Cu layer 13.
　また、約２００℃以上約４００℃以下の高温条件下において、Ｆｅ層１２の０．２％耐力は、約４００ＭＰａ以上であるとともに、約２００℃における０．２％耐力以上の０．２％耐力を有するように構成されている。つまり、約２００℃以上約４００℃以下の高温条件下ではＦｅ層１２は焼鈍されないように構成されている。これにより、約２００℃以上約４００℃以下の高温条件下におかれた後でも、リードフレーム１全体の機械的な強度が低下することが抑制されるように構成されている。 Further, under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less, the 0.2% yield strength of the Fe layer 12 is about 400 MPa or more, and a 0.2% yield strength of about 0.2% yield or more at about 200 ° C. It is comprised so that it may have. That is, the Fe layer 12 is configured not to be annealed under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less. Thereby, even after being placed under a high temperature condition of about 200 ° C. or higher and about 400 ° C. or lower, the mechanical strength of the entire lead frame 1 is suppressed from being lowered.
　また、第１実施形態では、外側Ｃｕ層１１の厚みｔ２と内側Ｃｕ層１３の厚みｔ３とが略同一の厚みになるように構成されている。さらに、Ｆｅ層１２の厚みｔ４は、リードフレーム１の厚みｔ１（＝ｔ２＋ｔ３＋ｔ４）の約２０％以上約７０％以下になるように構成されている。この結果、外側Ｃｕ層１１の厚みｔ２と内側Ｃｕ層１３の厚みｔ３とは、共に、リードフレーム１の厚みｔ１の約１５％以上約４０％以下になるとともに、外側Ｃｕ層１１と内側Ｃｕ層１３との合計の厚み（＝ｔ２＋ｔ３）は、リードフレーム１の厚みｔ１の厚みの約３０％以上約８０％以下になるように構成されている。 In the first embodiment, the thickness t2 of the outer Cu layer 11 and the thickness t3 of the inner Cu layer 13 are configured to be substantially the same thickness. Further, the thickness t4 of the Fe layer 12 is configured to be about 20% or more and about 70% or less of the thickness t1 (= t2 + t3 + t4) of the lead frame 1. As a result, the thickness t2 of the outer Cu layer 11 and the thickness t3 of the inner Cu layer 13 are both about 15% to about 40% of the thickness t1 of the lead frame 1, and the outer Cu layer 11 and the inner Cu layer. 13 (= t2 + t3) is configured to be about 30% to about 80% of the thickness t1 of the lead frame 1.
　また、第１実施形態では、リードフレーム１の外側Ｃｕ層１１側の一方表面１ａは、全面に渡って、表面粗さを示す指標としてのクルトシス（Ｒｋｕ）が１０．５以下になるとともに、算術平均粗さ（Ｒａ）が０．１５μｍ以下になるように形成されている。 In the first embodiment, the one surface 1a on the outer Cu layer 11 side of the lead frame 1 has a kurtosis (Rku) as an index indicating the surface roughness of 10.5 or less over the entire surface, and arithmetic. The average roughness (Ra) is formed to be 0.15 μm or less.
　ここで、クルトシス（Ｒｋｕ）とは、表面粗さを示す指標の一種であって、表面に形成された凹凸形状の尖り度合いを示す指標のことである。具体的には、クルトシスは、基準長さにおける高さの４乗を、表面粗さの標準偏差を意味する二乗平均根高さの４乗で除算することによって求められる。クルトシスが小さい場合には、表面の凹凸形状がなだらかになっている状態であることを意味し、クルトシスが大きい場合には、表面の凹凸形状が鋭角状に尖った状態であることを意味する。また、算術平均粗さ（Ｒａ）とは、表面粗さを示す指標の一種であって、基準長さにおける高さの絶対値の平均を算出することによって求められる。算術平均粗さが小さい場合には、表面の凹凸形状の高さの差が小さい（起伏が小さい）ことを意味し、算術平均粗さが大きい場合には、表面の凹凸形状の高さの差が大きい（起伏が大きい）ことを意味する。 Here, kurtosis (Rku) is a kind of index indicating the surface roughness and indicating the sharpness of the uneven shape formed on the surface. Specifically, the kurtosis is obtained by dividing the fourth power of the height in the reference length by the fourth power of the root mean square height that means the standard deviation of the surface roughness. When the kurtosis is small, it means that the uneven shape of the surface is smooth, and when the kurtosis is large, it means that the uneven shape of the surface is sharply sharpened. The arithmetic average roughness (Ra) is a kind of index indicating the surface roughness, and is obtained by calculating the average of the absolute values of the height in the reference length. If the arithmetic average roughness is small, it means that the difference in height of the surface irregularities is small (the undulation is small), and if the arithmetic average roughness is large, the difference in height of the irregularities on the surface Is large (the undulations are large).
　つまり、リードフレーム１の一方表面１ａは、クルトシスが小さいことにより凹凸形状がなだらかであり、かつ、算術平均粗さが小さいことにより凹凸形状の起伏が小さくなるように形成されている。 That is, the one surface 1a of the lead frame 1 is formed so that the concavo-convex shape is gentle due to the small kurtosis, and the undulation of the concavo-convex shape is small due to the small arithmetic average roughness.
　また、リードフレーム１の一方表面１ａ上には、光反射層１４（図３参照）および接続層１５（図４参照）が形成されている。光反射層１４は、一方表面１ａのうちの基台３の上面３ａに対応する部分の一方表面１ａ上で、かつ、リフレクタ６に囲まれる領域に形成されている。また、接続層１５は、半田１０１ａおよび１０１ｂが配置される領域に形成されている。具体的には、接続層１５は、一方表面１ａのうちの基台３の下面３ｃに対応する部分の一方表面１ａ上と、一方表面１ａのうちの基台３の両側面３ｂに対応する部分の下側の一方表面１ａ上とに形成されている。また、光反射層１４の厚みｔ５および接続層１５の厚みｔ６は、共に、約０．５μｍ以上約１．５μｍ以下である。なお、光反射層１４は、本発明の「メッキ層」の一例である。 Further, a light reflection layer 14 (see FIG. 3) and a connection layer 15 (see FIG. 4) are formed on one surface 1a of the lead frame 1. The light reflecting layer 14 is formed on the one surface 1 a of the portion corresponding to the upper surface 3 a of the base 3 in the one surface 1 a and in a region surrounded by the reflector 6. The connection layer 15 is formed in a region where the solders 101a and 101b are disposed. Specifically, the connection layer 15 is formed on the one surface 1a of the portion corresponding to the lower surface 3c of the base 3 in the one surface 1a and the portions corresponding to both side surfaces 3b of the base 3 in the one surface 1a. Is formed on the lower one surface 1a. The thickness t5 of the light reflecting layer 14 and the thickness t6 of the connection layer 15 are both about 0.5 μm or more and about 1.5 μm or less. The light reflecting layer 14 is an example of the “plating layer” in the present invention.
　光反射層１４は、Ａｇメッキ層からなり、ＬＥＤ素子２から下方（Ｚ２側）に照射された光を、上方（Ｚ１側）に向かって反射する機能を有するとともに、Ａｕワイヤ５ａおよび５ｂとリードフレーム１とを容易に接続するために形成されている。また、接続層１５は、リードフレーム１側からＮｉメッキ層およびＡｕメッキ層（図示せず）が順に積層された構造を有している。この接続層１５は、半田１０１ａおよび１０１ｂに対するリードフレーム１の濡れ性を向上させるために形成されている。また、光反射層１４および接続層１５は、共に、メッキ処理によって形成されている。 The light reflection layer 14 is made of an Ag plating layer, and has a function of reflecting light irradiated downward (Z2 side) from the LED element 2 toward the upper side (Z1 side), and leads to the Au wires 5a and 5b. It is formed for easy connection with the frame 1. The connection layer 15 has a structure in which a Ni plating layer and an Au plating layer (not shown) are sequentially laminated from the lead frame 1 side. This connection layer 15 is formed in order to improve the wettability of the lead frame 1 with respect to the solders 101a and 101b. The light reflecting layer 14 and the connection layer 15 are both formed by plating.
　第１実施形態では、上記のように、Ｃｕからなる外側Ｃｕ層１１を、ＬＥＤ素子２が配置される側（外側）である一方表面１ａに配置することによって、ＦｅまたはＦｅ合金と比較して熱伝導性に優れたＣｕからなる外側Ｃｕ層１１がＬＥＤ素子２側に配置されているので、ＬＥＤ素子２からの熱を、ＬＥＤ素子２付近の外側Ｃｕ層１１の部分からＬＥＤ素子２から離れた位置の外側Ｃｕ層１１の部分に向けて迅速に拡散させることができる。これにより、外側Ｃｕ層１１に接続された外部の放熱部材（プリント基板１０２）や外気に外側Ｃｕ層１１の熱を迅速に放熱させることができるので、ＬＥＤ素子２付近の放熱性能が向上したリードフレーム１に熱が蓄積されることを抑制することができる。この結果、リードフレーム１に蓄積された熱によりＬＥＤ素子２の温度が上昇することを抑制することができるので、ＬＥＤ素子２の温度上昇に起因してＬＥＤ素子２の輝度が低下することを抑制することができる。また、ＬＥＤ素子２が異常な高温に長時間さらされることを抑制することができるので、ＬＥＤ素子２の長寿命化を図ることができる。 In the first embodiment, as described above, the outer Cu layer 11 made of Cu is disposed on the one surface 1a on the side (outer side) on which the LED element 2 is disposed, thereby comparing with Fe or Fe alloy. Since the outer Cu layer 11 made of Cu having excellent thermal conductivity is disposed on the LED element 2 side, the heat from the LED element 2 is separated from the LED element 2 from the portion of the outer Cu layer 11 near the LED element 2. It is possible to diffuse quickly toward the portion of the outer Cu layer 11 at a certain position. As a result, the heat of the outer Cu layer 11 can be quickly dissipated to an external heat dissipating member (printed circuit board 102) connected to the outer Cu layer 11 and the outside air, so that the heat dissipating performance near the LED element 2 is improved. Accumulation of heat in the frame 1 can be suppressed. As a result, it is possible to suppress the temperature of the LED element 2 from rising due to the heat accumulated in the lead frame 1, thereby suppressing the brightness of the LED element 2 from decreasing due to the temperature increase of the LED element 2. can do. Moreover, since it can suppress that the LED element 2 is exposed to abnormally high temperature for a long time, the lifetime of the LED element 2 can be achieved.
　また、第１実施形態では、Ｆｅ層１２を構成するＦｅまたはＦｅ合金が、外側Ｃｕ層１１および内側Ｃｕ層１３を構成するＣｕよりも機械的な強度が大きいとともに、Ｆｅ層１２の線膨張係数（約１２×１０－６／Ｋ）が外側Ｃｕ層１１および内側Ｃｕ層１３の線膨張係数（約１７×１０－６／Ｋ）よりも小さいことによって、リードフレーム１がＦｅ層１２と比較して線膨張係数の大きいＣｕのみ（Ｃｕ層）からなる場合と比べて、外側Ｃｕ層１１と、外側Ｃｕ層１１よりも線膨張係数が小さく特に高温条件下で機械的な強度が大きいＦｅ層１２とを用いてリードフレーム１を多層構造としているので、リードフレーム１の熱膨張を抑制することができるとともに、リードフレーム１の機械的な強度を向上させることができる。これにより、熱膨張や外力に起因してリードフレーム１が変形することを抑制することができるので、リードフレーム１の一方表面１ａ上に配置されたＬＥＤ素子２にもリードフレーム１の変形に伴う応力が加わることを抑制することができる。この結果、ＬＥＤ素子２に応力が加わることに起因するＬＥＤ素子２の輝度の低下、および、ＬＥＤ素子２の短寿命化を抑制することができる。 In the first embodiment, the Fe or Fe alloy constituting the Fe layer 12 has a mechanical strength higher than that of the Cu constituting the outer Cu layer 11 and the inner Cu layer 13, and the linear expansion coefficient of the Fe layer 12. by (about 12 × 10 -6 / K) is smaller than the linear expansion coefficient of the outer Cu layer 11 and the inner Cu layer 13 (about 17 × 10 -6 / K), compared lead frame 1 and the Fe layer 12 The outer Cu layer 11 and the Fe layer 12 having a smaller linear expansion coefficient than the outer Cu layer 11 and having a high mechanical strength under high temperature conditions, compared with a case where only Cu having a large linear expansion coefficient (Cu layer) is formed. Since the lead frame 1 has a multi-layer structure using the above, the thermal expansion of the lead frame 1 can be suppressed and the mechanical strength of the lead frame 1 can be improved. As a result, the lead frame 1 can be prevented from being deformed due to thermal expansion or external force, so that the LED element 2 disposed on the one surface 1a of the lead frame 1 also accompanies the deformation of the lead frame 1. Application of stress can be suppressed. As a result, it is possible to suppress a decrease in luminance of the LED element 2 due to stress applied to the LED element 2 and a shortening of the life of the LED element 2.
　また、第１実施形態では、外側Ｃｕ層１１の厚みｔ２と略同一の厚みｔ３を有し、外側Ｃｕ層１１と同一の金属材料（Ｃｕ）からなる内側Ｃｕ層１３を、外側Ｃｕ層１１との間にＦｅ層１２を挟み込むとともに、基台３側（内側）の他方表面１ｂに配置することによって、同一の金属材料（Ｃｕ）からなるとともに、略同一の厚みを有する外側Ｃｕ層１１と内側Ｃｕ層１３とによって、外側Ｃｕ層１１および内側Ｃｕ層１３よりも線膨張係数が小さいＦｅ層１２を挟み込むことにより、リードフレーム１が外側Ｃｕ層１１およびＦｅ層１２のみからなる場合と異なり、リードフレーム１が外側Ｃｕ層１１側またはＦｅ層１２側のいずれか一方に反るように変形することを効果的に抑制することができる。これにより、リードフレーム１の一方表面１ａ上に配置されたＬＥＤ素子２にもリードフレーム１の変形に伴う応力が加わることを抑制することができる。この結果、ＬＥＤ素子２に応力が加わることに起因するＬＥＤ素子２の輝度の低下、および、ＬＥＤ素子２の短寿命化を抑制することができる。また、リードフレーム１の構造を表裏で略同一にすることができるので、リードフレーム１の表裏の区別が不要なように構成することができる。 In the first embodiment, the inner Cu layer 13 having the same thickness t3 as the outer Cu layer 11 and made of the same metal material (Cu) as the outer Cu layer 11 is used as the outer Cu layer 11. The Fe layer 12 is sandwiched between them and disposed on the other surface 1b on the base 3 side (inner side) so that the outer Cu layer 11 and the inner side are made of the same metal material (Cu) and have substantially the same thickness. Unlike the case where the lead frame 1 is composed only of the outer Cu layer 11 and the Fe layer 12 by sandwiching the Fe layer 12 having a smaller linear expansion coefficient than the outer Cu layer 11 and the inner Cu layer 13 with the Cu layer 13, the lead It is possible to effectively suppress deformation of the frame 1 so as to warp either the outer Cu layer 11 side or the Fe layer 12 side. Thereby, it can suppress that the stress accompanying a deformation | transformation of the lead frame 1 is added also to the LED element 2 arrange | positioned on the one surface 1a of the lead frame 1. FIG. As a result, it is possible to suppress a decrease in luminance of the LED element 2 due to stress applied to the LED element 2 and a shortening of the life of the LED element 2. In addition, since the structure of the lead frame 1 can be made substantially the same on the front and back, the lead frame 1 can be configured so as not to distinguish between the front and the back.
　また、第１実施形態では、リードフレーム１の外側Ｃｕ層１１側の一方表面１ａを、クルトシス（Ｒｋｕ）が１０．５以下になるとともに、算術平均粗さ（Ｒａ）が０．１５μｍ以下になるように形成している。ここで、一方表面１ａのクルトシスが１０．５よりも大きく、一方表面１ａに尖った部分が形成されている場合や、一方表面１ａの算術平均粗さが０．１５μｍよりも大きく、一方表面１ａにおける凹凸の高さの差（起伏）が大きい（粗い）場合には、光反射膜１４を形成する際に光反射膜１４が破れてしまいメッキ欠陥が生じる可能性が高くなる。このようなメッキ欠陥が形成されている場合には、ＬＥＤ素子２から下方（Ｚ２方向）に向かって照射された光が、リードフレーム１の一方表面１ａで十分に反射されずに、その結果、ＬＥＤモジュール１００の光量が低下してしまう。一方、一方表面１ａを、クルトシスが１０．５以下になるとともに、算術平均粗さが０．１５μｍ以下になるように形成することによって、ＬＥＤ素子２が配置される一方表面１ａの尖っている部分を少なくすることができるとともに、一方表面１ａの起伏を小さくすることができるので、一方表面１ａ上に欠陥のない良質な光反射層１４および接続層１５を形成することができる。これにより、ＬＥＤ素子２から照射された光がリードフレーム１の一方表面１ａにおいて十分に反射されるので、ＬＥＤモジュール１００の光量が低下することを抑制することができる。 In the first embodiment, the one surface 1a on the outer Cu layer 11 side of the lead frame 1 has a kurtosis (Rku) of 10.5 or less and an arithmetic average roughness (Ra) of 0.15 μm or less. It is formed as follows. Here, when the kurtosis of the one surface 1a is larger than 10.5 and a sharp portion is formed on the one surface 1a, or when the arithmetic average roughness of the one surface 1a is larger than 0.15 μm, the one surface 1a When the unevenness difference (undulation) is large (rough), the light reflection film 14 is broken when the light reflection film 14 is formed, and there is a high possibility that a plating defect will occur. When such a plating defect is formed, the light irradiated downward (Z2 direction) from the LED element 2 is not sufficiently reflected by the one surface 1a of the lead frame 1, and as a result, The light quantity of LED module 100 will fall. On the other hand, by forming the one surface 1a so that the kurtosis is 10.5 or less and the arithmetic average roughness is 0.15 μm or less, the pointed portion of the one surface 1a on which the LED element 2 is disposed Since the undulation of the one surface 1a can be reduced, it is possible to form a high-quality light reflecting layer 14 and connection layer 15 having no defect on the one surface 1a. Thereby, since the light irradiated from the LED element 2 is fully reflected in the one surface 1a of the lead frame 1, it can suppress that the light quantity of the LED module 100 falls.
　また、第１実施形態では、外側Ｃｕ層１１と内側Ｃｕ層１３との合計の厚みが、リードフレーム１の厚みｔ１の約３０％以上であることによって、Ｆｅ層１２よりも熱伝導率の大きい外側Ｃｕ層１１の厚みｔ２を特に十分に確保することにより、外側Ｃｕ層１１に接続された外部の放熱部材や外気に外側Ｃｕ層１１の熱をより迅速に放熱させることができ、その結果、ＬＥＤ素子２付近のリードフレーム１に熱が蓄積されることを効果的に抑制することができるので好ましい。また、外側Ｃｕ層１１と内側Ｃｕ層１３との合計の厚みが、リードフレーム１の厚みｔ１の約８０％以下であることにより、Ｆｅ層１２の厚みｔ４についても十分に確保することができるので、相対的に線膨張係数が大きくて熱により変形しやすい外側Ｃｕ層１１および内側Ｃｕ層１３と、相対的に線膨張係数が小さくて熱により変形しにくいＦｅ層１２との間に発生する応力に起因して外側Ｃｕ層１１とＦｅ層１２とが剥がれたり、内側Ｃｕ層１３とＦｅ層１２とが剥がれたりすることを抑制することができる。 In the first embodiment, the total thickness of the outer Cu layer 11 and the inner Cu layer 13 is about 30% or more of the thickness t1 of the lead frame 1, so that the thermal conductivity is larger than that of the Fe layer 12. By securing a particularly sufficient thickness t2 of the outer Cu layer 11, the heat of the outer Cu layer 11 can be radiated more quickly to an external heat radiating member connected to the outer Cu layer 11 or to the outside air. It is preferable because heat can be effectively suppressed from being accumulated in the lead frame 1 in the vicinity of the LED element 2. Moreover, since the total thickness of the outer Cu layer 11 and the inner Cu layer 13 is about 80% or less of the thickness t1 of the lead frame 1, the thickness t4 of the Fe layer 12 can be sufficiently secured. Stress generated between the outer Cu layer 11 and the inner Cu layer 13 that have a relatively large linear expansion coefficient and are easily deformed by heat, and the Fe layer 12 that has a relatively small linear expansion coefficient and are not easily deformed by heat. It is possible to prevent the outer Cu layer 11 and the Fe layer 12 from being peeled off and the inner Cu layer 13 and the Fe layer 12 from being peeled off.
　また、第１実施形態では、一方表面１ａ上に光反射層１４を形成することによって、光を反射しにくいＣｕからなる外側Ｃｕ層１１が位置するとともに、ＬＥＤ素子２が配置される一方表面１ａ上に光反射層１４が形成されているので、ＬＥＤ素子２からの光をより反射させることができる。 In the first embodiment, by forming the light reflecting layer 14 on the one surface 1a, the outer Cu layer 11 made of Cu that hardly reflects light is positioned, and the one surface 1a on which the LED element 2 is disposed. Since the light reflection layer 14 is formed thereon, the light from the LED element 2 can be reflected more.
　また、第１実施形態では、リードフレーム１の板面方向（積層方向に直交する方向）の熱伝導率を、約１５０Ｗ／（ｍ×Ｋ）以上にするとともに、リードフレーム１の板厚方向（積層方向）の熱伝導率を、約１００Ｗ／（ｍ×Ｋ）以上にすることによって、ＬＥＤ素子２からの熱を、外側Ｃｕ層１１だけでなく板厚方向に位置するＦｅ層１２および内側Ｃｕ層１３に向けても十分に拡散させることができるとともに、板面方向のＦｅ層１２および内側Ｃｕ層１３に向けても十分に拡散させることができる。これにより、ＬＥＤ素子２付近の熱を、リードフレーム１の全体により拡散させることができるので、ＬＥＤ素子２付近のリードフレーム１に熱が蓄積されることをより抑制することができる。 In the first embodiment, the thermal conductivity in the plate surface direction (direction orthogonal to the stacking direction) of the lead frame 1 is set to about 150 W / (m × K) or more, and the thickness direction of the lead frame 1 ( The heat conductivity in the stacking direction) is about 100 W / (mxK) or more, so that the heat from the LED element 2 is not only the outer Cu layer 11 but also the Fe layer 12 and the inner Cu positioned in the plate thickness direction. It can be sufficiently diffused toward the layer 13 and can also be sufficiently diffused toward the Fe layer 12 and the inner Cu layer 13 in the plate surface direction. Thereby, the heat in the vicinity of the LED element 2 can be diffused by the entire lead frame 1, so that the heat can be further prevented from being accumulated in the lead frame 1 in the vicinity of the LED element 2.
　また、第１実施形態では、リードフレーム１の線膨張係数を、約１７×１０－６／Ｋ以下にすることによって、リードフレーム１の熱膨張を十分に抑制することができるので、熱膨張に起因するリードフレーム１の変形を十分に抑制することができる。これにより、リードフレーム１の一方表面１ａ上に配置されたＬＥＤ素子２にリードフレーム１の変形に伴う応力が加わることを効果的に抑制することができる。 In the first embodiment, the thermal expansion of the lead frame 1 can be sufficiently suppressed by setting the linear expansion coefficient of the lead frame 1 to about 17 × 10 −6 / K or less. The resulting deformation of the lead frame 1 can be sufficiently suppressed. Thereby, it can suppress effectively that the stress accompanying a deformation | transformation of the lead frame 1 is added to the LED element 2 arrange | positioned on the one surface 1a of the lead frame 1. FIG.
　また、第１実施形態では、Ｆｅ層１２が純Ｆｅからなるように構成した場合には、リードフレーム１の熱膨張をより抑制することができるとともに、リードフレーム１の機械的な強度を向上させることができる。 In the first embodiment, when the Fe layer 12 is made of pure Fe, the thermal expansion of the lead frame 1 can be further suppressed and the mechanical strength of the lead frame 1 is improved. be able to.
　また、第１実施形態では、Ｆｅ層１２が、ＮｉおよびＣｒの少なくともいずれか一方を含有するとともに、ＮｉとＣｒとの合計が１０質量％以下であるＦｅ合金からなるように構成した場合には、Ｆｅ層１２の耐食性を向上させることができるとともに、Ｆｅ層１２の熱伝導性が過度に小さくなることを抑制することができる。 In the first embodiment, when the Fe layer 12 includes at least one of Ni and Cr, and the Fe layer 12 is composed of an Fe alloy in which the total of Ni and Cr is 10% by mass or less, The corrosion resistance of the Fe layer 12 can be improved, and the thermal conductivity of the Fe layer 12 can be suppressed from becoming excessively small.
　また、第１実施形態では、リードフレーム１を、基台３の上面３ａの端部近傍と、Ｘ方向の両側面３ｂと、基台３の下面３ｃの一部とに沿うように折り曲げることによって、板状の基台３を覆うようにリードフレーム１を配置することができるので、リードフレーム１が折り曲げられていない場合と比べて、リードフレーム１の表面積を大きく確保することができる。これにより、ＬＥＤ素子２からの熱を、ＬＥＤ素子２付近の外側Ｃｕ層１１の部分からＬＥＤ素子２から離れた広範囲の外側Ｃｕ層１１の部分に向けて迅速に拡散させることができるとともに、広い範囲で外気に放熱させることができるので、ＬＥＤ素子２付近のリードフレーム１に熱が蓄積されることをより抑制することができる。 In the first embodiment, the lead frame 1 is bent along the vicinity of the end of the upper surface 3 a of the base 3, both side surfaces 3 b in the X direction, and a part of the lower surface 3 c of the base 3. Since the lead frame 1 can be disposed so as to cover the plate-like base 3, the surface area of the lead frame 1 can be secured larger than when the lead frame 1 is not bent. Thereby, the heat from the LED element 2 can be quickly diffused from the part of the outer Cu layer 11 in the vicinity of the LED element 2 toward the wide part of the outer Cu layer 11 away from the LED element 2 and wide. Since heat can be radiated to the outside air in a range, it is possible to further suppress heat from being accumulated in the lead frame 1 near the LED element 2.
　次に、図２、図３および図５～図７を参照して、本発明の第１実施形態によるＬＥＤモジュール１００の製造プロセスについて説明する。 Next, a manufacturing process of the LED module 100 according to the first embodiment of the present invention will be described with reference to FIGS. 2, 3, and 5 to 7. FIG.
　まず、幅方向（Ｘ方向）に所定の幅を有し、Ｘ方向と直交する圧延方向（Ｙ方向）に延びるＣｕからなる一対のＣｕ板と、Ｘ方向にＣｕ板と略同一の幅を有し、Ｙ方向に延びるＦｅ板とを準備する。なお、Ｃｕ板は、純度約９９．９％以上のＣｕからなる。また、Ｆｅ板は、純Ｆｅ、または、ＮｉおよびＣｒの少なくともいずれか一方を含有するとともに、ＮｉとＣｒとの合計が１０質量％以下であるＦｅ合金からなる。この際、Ｆｅ板の厚みが、一対のＣｕ板とＦｅ板とを合計した厚みの約２０％以上約７０％以下になるように準備する。 First, a pair of Cu plates made of Cu having a predetermined width in the width direction (X direction) and extending in the rolling direction (Y direction) orthogonal to the X direction, and having substantially the same width as the Cu plate in the X direction. Then, an Fe plate extending in the Y direction is prepared. The Cu plate is made of Cu having a purity of about 99.9% or more. Further, the Fe plate is made of Fe alloy containing pure Fe or at least one of Ni and Cr and the total of Ni and Cr being 10% by mass or less. At this time, the Fe plate is prepared so that the thickness thereof is about 20% or more and about 70% or less of the total thickness of the pair of Cu plate and Fe plate.
　そして、図５に示すように、Ｆｅ板を挟み込むように一対のＣｕ板を配置した状態で、一対のＣｕ板とＦｅ板とを、Ｘ方向に延びるローラ２０１ａおよび２０１ｂを用いてＹ方向に圧延（圧延接合）する。この際、リードフレーム１の一方表面１ａ（外側Ｃｕ層１１）に接触するローラ２０１ａとして、平滑なローラ表面を有するローラ２０１ａを用いる。具体的には、ローラ表面の算術平均粗さ（Ｒａ）が約０．０５μｍ以下であるローラ２０１ａを用いる。これにより、リードフレーム１の一方表面１ａのクルトシス（Ｒｋｕ）が１０．５以下に調整されるとともに、算術平均粗さ（Ｒａ）が０．１５μｍ以下に調整される。 Then, as shown in FIG. 5, with the pair of Cu plates arranged so as to sandwich the Fe plate, the pair of Cu plates and the Fe plate are rolled in the Y direction using rollers 201a and 201b extending in the X direction. (Rolling joining). At this time, a roller 201 a having a smooth roller surface is used as the roller 201 a that contacts the one surface 1 a (outer Cu layer 11) of the lead frame 1. Specifically, a roller 201a having a roller surface arithmetic average roughness (Ra) of about 0.05 μm or less is used. Thereby, the kurtosis (Rku) of the one surface 1a of the lead frame 1 is adjusted to 10.5 or less, and the arithmetic average roughness (Ra) is adjusted to 0.15 μm or less.
　その後、一対のＣｕ板とＦｅ板とを拡散焼鈍することによって、外側Ｃｕ層１１、Ｆｅ層１２および内側Ｃｕ層１３が接合された３層のクラッド構造を有するクラッド材からなるリードフレーム用材料２００が形成される。この際、図３に示すように、リードフレーム用材料２００（リードフレーム１）の厚みｔ１は、約０．１ｍｍ以上約１．５ｍｍ以下になり、Ｆｅ層１２の厚みｔ４は、リードフレーム用材料２００の厚みｔ１（＝ｔ２＋ｔ３＋ｔ４）の約２０％以上約７０％以下になる。 Thereafter, a lead frame material 200 made of a clad material having a three-layer clad structure in which the outer Cu layer 11, the Fe layer 12, and the inner Cu layer 13 are joined by diffusion annealing the pair of Cu plate and Fe plate. Is formed. At this time, as shown in FIG. 3, the thickness t1 of the lead frame material 200 (lead frame 1) is about 0.1 mm to about 1.5 mm, and the thickness t4 of the Fe layer 12 is the lead frame material. It becomes about 20% or more and about 70% or less of the thickness t1 (= t2 + t3 + t4) of 200.
　その後、Ａｇを含むメッキ液に接触させることによって、リードフレーム用材料２００（リードフレーム１）の一方表面１ａのうちの基台３の上面３ａに対応する部分の一方表面１ａ上で、かつ、リフレクタ６に囲まれる領域に、Ａｇメッキ層からなる光反射層１４（図２参照）を形成する。また、Ｎｉを含むメッキ液に接触させた後に、Ａｕを含むメッキ液に接触させることによって、一方表面１ａのうちの基台３の下面３ｃに対応する部分の一方表面１ａ上と、一方表面１ａのうちの基台３の両側面３ｂに対応する部分の下側の一方表面１ａ上とに、Ｎｉメッキ層およびＡｕメッキ層（図示せず）が順に積層された接続層１５（図２参照）を形成する。 After that, by contacting with a plating solution containing Ag, the reflector 200 is disposed on the one surface 1a of the portion corresponding to the upper surface 3a of the base 3 of the one surface 1a of the lead frame material 200 (lead frame 1) and the reflector. A light reflecting layer 14 (see FIG. 2) made of an Ag plating layer is formed in a region surrounded by 6. Further, after contacting with a plating solution containing Ni and then contacting with a plating solution containing Au, a portion of the one surface 1a corresponding to the lower surface 3c of the base 3 on one surface 1a and one surface 1a. Connection layer 15 (see FIG. 2) in which a Ni plating layer and an Au plating layer (not shown) are sequentially stacked on one lower surface 1a of the portion corresponding to both side surfaces 3b of the base 3. Form.
　そして、図６に示すように、プレス加工によって、リードフレーム用材料２００にＹ方向に延びる切り欠き部１０ａを形成する。 And as shown in FIG. 6, the notch part 10a extended in a Y direction is formed in the lead frame material 200 by press work.
　その後、インサート成形により、リードフレーム用材料２００に基台３およびリフレクタ６を形成する。具体的には、図６に示すように、所定の形状を有する金型２０２にリードフレーム用材料２００を配置した状態で、金型２０２にアルミナ（Ａｌ２Ｏ３）とバインダーとの混合物を注入する。そして、約２００℃以上約４００℃以下の高温条件下で焼成することによって、バインダーを取り除く。これにより、金型２０２の形状に対応した形状を有するように、アルミナからなる基台３およびリフレクタ６が形成される。この際、約２００℃以上約４００℃以下の高温条件下ではＦｅ層１２は焼鈍されないので、Ｆｅ層１２の０．２％耐力は、約２００℃における０．２％耐力以上であるとともに、約４００ＭＰａ以上に保持される。これにより、リードフレーム１全体の機械的な強度が低下するのが抑制される。 Thereafter, the base 3 and the reflector 6 are formed on the lead frame material 200 by insert molding. Specifically, as shown in FIG. 6, a mixture of alumina (Al 2 O 3 ) and a binder is injected into the mold 202 with the lead frame material 200 disposed in the mold 202 having a predetermined shape. To do. And a binder is removed by baking on about 200 degreeC or more and about 400 degrees C or less high temperature conditions. Thereby, the base 3 and the reflector 6 made of alumina are formed so as to have a shape corresponding to the shape of the mold 202. At this time, since the Fe layer 12 is not annealed under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less, the 0.2% yield strength of the Fe layer 12 is not less than 0.2% yield strength at about 200 ° C. It is maintained at 400 MPa or more. Thereby, it is suppressed that the mechanical strength of the whole lead frame 1 falls.
　その後、図７に示すように、リードフレーム１の一方表面１ａに形成された光反射層１４の表面上にＬＥＤ素子２を実装する。この際、光反射層１４とＬＥＤ素子２との間に絶縁性樹脂からなる接着部材４（図２参照）を配置することによって、リードフレーム１とＬＥＤ素子２とを接着する。 Thereafter, as shown in FIG. 7, the LED element 2 is mounted on the surface of the light reflecting layer 14 formed on the one surface 1 a of the lead frame 1. At this time, the lead frame 1 and the LED element 2 are bonded together by disposing an adhesive member 4 (see FIG. 2) made of an insulating resin between the light reflecting layer 14 and the LED element 2.
　そして、超音波溶接によって、ＬＥＤ素子２の上面側に形成された図示しない一対の電極とＡｕワイヤ５ａの一方端およびＡｕワイヤ５ｂの一方端とをそれぞれ接続する。また、超音波溶接によって、リードフレーム１の一方表面１ａのＸ１側およびＸ２側とＡｕワイヤ５ａの他方端およびＡｕワイヤ５ｂの他方端とをそれぞれ接続する。この際、リードフレーム１の一方表面１ａ上に形成されたＡｇメッキ層からなる光反射層１４（図２参照）によって、Ｃｕからなる外側Ｃｕ層１１にＡｕワイヤ５ａおよび５ｂを溶接する場合と比べて、容易に、リードフレーム１とＡｕワイヤ５ａおよび５ｂとを接続することが可能である。 Then, a pair of electrodes (not shown) formed on the upper surface side of the LED element 2 are connected to one end of the Au wire 5a and one end of the Au wire 5b by ultrasonic welding. Further, the X1 side and the X2 side of the one surface 1a of the lead frame 1 are connected to the other end of the Au wire 5a and the other end of the Au wire 5b by ultrasonic welding. At this time, compared to the case where the Au wires 5a and 5b are welded to the outer Cu layer 11 made of Cu by the light reflection layer 14 (see FIG. 2) made of an Ag plating layer formed on the one surface 1a of the lead frame 1. Thus, the lead frame 1 and the Au wires 5a and 5b can be easily connected.
　そして、ＬＥＤ素子２とＡｕワイヤ５ａおよび５ｂとを覆うように、リフレクタ６とリードフレーム１とによって形成される空間に封止樹脂７を配置する。そして、約２００℃以上約４００℃以下の高温条件下で封止樹脂７を硬化させる。この際、上記したように、約２００℃以上約４００℃以下の高温条件下ではＦｅ層１２は焼鈍されないので、Ｆｅ層１２の０．２％耐力は、約２００℃における０．２％耐力以上であるとともに、約４００ＭＰａ以上に保持される。これにより、リードフレーム１全体の機械的な強度が低下するのが抑制される。これにより、図７に示すように、ＬＥＤモジュール１００に対応する部分が複数設けられた、リードフレーム用材料２００が形成される。 Then, a sealing resin 7 is disposed in a space formed by the reflector 6 and the lead frame 1 so as to cover the LED element 2 and the Au wires 5a and 5b. Then, the sealing resin 7 is cured under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less. At this time, as described above, since the Fe layer 12 is not annealed under a high temperature condition of about 200 ° C. or higher and about 400 ° C. or lower, the 0.2% proof stress of the Fe layer 12 is 0.2% proof stress or higher at about 200 ° C. And at about 400 MPa or more. Thereby, it is suppressed that the mechanical strength of the whole lead frame 1 falls. Thereby, as shown in FIG. 7, the lead frame material 200 provided with a plurality of portions corresponding to the LED module 100 is formed.
　その後、切断線２００ａおよび２００ｂに沿って、リードフレーム用材料２００を切断する。そして、図２に示すように、切断線２００ａのＸ１側に位置するリードフレーム１を、Ｘ１側の基台３のＸ１側の側面３ｂおよび下面３ｃに沿うように曲げ加工するとともに、切断線２００ａのＸ２側に位置するリードフレーム１を、基台３のＸ２側の側面３ｂおよび下面３ｃに沿うように曲げ加工する。これにより、Ｙ方向に延びる切り欠き部１０ｂが形成されて、複数のＬＥＤモジュール１００が形成される。 Thereafter, the lead frame material 200 is cut along the cutting lines 200a and 200b. Then, as shown in FIG. 2, the lead frame 1 positioned on the X1 side of the cutting line 200a is bent along the side surface 3b and the lower surface 3c on the X1 side of the base 3 on the X1 side, and the cutting line 200a. The lead frame 1 located on the X2 side of the base 3 is bent along the side surface 3b and the lower surface 3c on the X2 side of the base 3. Thereby, the notch part 10b extended in a Y direction is formed, and the some LED module 100 is formed.
　最後に、リードフレーム１の一方表面１ａ上に形成された接続層１５に半田１０１ａおよび１０１ｂが位置するように、Ｃｕ配線１０２ａおよび１０２ｂが形成されたプリント基板１０２にＬＥＤモジュール１００を接続する。 Finally, the LED module 100 is connected to the printed circuit board 102 on which the Cu wirings 102a and 102b are formed so that the solders 101a and 101b are positioned on the connection layer 15 formed on the one surface 1a of the lead frame 1.
　第１実施形態の製造方法では、上記のように、約２００℃以上約４００℃以下の高温条件下において、Ｆｅ層１２の０．２％耐力を、約４００ＭＰａ以上であるように構成することによって、約２００℃以上約４００℃以下の高温条件下で熱処理される、基台３およびリフレクタ６が形成する製造プロセスの後、および、封止樹脂７を硬化させる製造プロセスの後においてもＦｅ層１２の０．２％耐力が約４００ＭＰａ以上に保持されるので、リードフレーム１の機械的な強度が低下することを抑制することができる。これにより、機械的な強度が低下したリードフレーム１が取り扱い時に破損しやすくなることに起因してＬＥＤモジュール１００の製造が困難になることを抑制することができる。 In the manufacturing method of the first embodiment, as described above, the 0.2% proof stress of the Fe layer 12 is configured to be about 400 MPa or more under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less. The Fe layer 12 is heat-treated under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less, after the manufacturing process formed by the base 3 and the reflector 6 and after the manufacturing process for curing the sealing resin 7. Since the 0.2% proof stress is maintained at about 400 MPa or more, the mechanical strength of the lead frame 1 can be prevented from being lowered. Thereby, it can suppress that manufacture of the LED module 100 becomes difficult resulting from it being easy to break the lead frame 1 with which mechanical strength fell at the time of handling.
　（第２実施形態）
　次に、図８および図９を参照して、本発明の第２実施形態について説明する。この第２実施形態では、上記第１実施形態とは異なり、ＬＥＤモジュール３００において、リードフレーム３０１の一方表面３０１ａにＡｇまたはＡｌからなる外側層３１１を配置するとともに、他方表面３０１ｂにＡｇまたはＡｌからなる内側層３１３を配置した場合について説明する。なお、ＬＥＤモジュール３００は、本発明の「発光モジュール」の一例であり、リードフレーム３０１は、本発明の「発光素子用基板」の一例である。また、外側層３１１および内側層３１３は、それぞれ、本発明の「第１層」および「第３層」の一例である。 (Second Embodiment)
Next, a second embodiment of the present invention will be described with reference to FIGS. In the second embodiment, unlike the first embodiment, in the LED module 300, the outer layer 311 made of Ag or Al is arranged on one surface 301a of the lead frame 301, and the other surface 301b is made of Ag or Al. A case where the inner layer 313 is arranged will be described. The LED module 300 is an example of the “light emitting module” in the present invention, and the lead frame 301 is an example of the “light emitting element substrate” in the present invention. The outer layer 311 and the inner layer 313 are examples of the “first layer” and the “third layer” in the present invention, respectively.
　本発明の第２実施形態では、図８および図９に示すように、リードフレーム３０１は、ＡｇまたはＡｌからなる外側層３１１と、Ｆｅ層１２と、外側層３１１と同一の金属からなる内側層３１３とが互いに圧延接合された３層のクラッド構造を有するクラッド材（図９参照）からなる。また、内側層３１３は、ＬＥＤ素子２が配置される側（外側）である一方表面３０１ａに配置されているとともに、内側層３１３は、基台３側（内側）の他方表面３０１ｂに配置されている。 In the second embodiment of the present invention, as shown in FIGS. 8 and 9, the lead frame 301 includes an outer layer 311 made of Ag or Al, an Fe layer 12, and an inner layer made of the same metal as the outer layer 311. 313 is made of a clad material (see FIG. 9) having a three-layer clad structure that is roll-bonded to each other. The inner layer 313 is disposed on the one surface 301a on the side (outer side) on which the LED element 2 is disposed, and the inner layer 313 is disposed on the other surface 301b on the base 3 side (inner side). Yes.
　また、図９に示すように、外側層３１１の厚みｔ２と内側層３１３の厚みｔ３とが略同一の厚みになるように構成されている。また、外側層３１１の厚みｔ２と内側層３１３の厚みｔ３とは、共に、リードフレーム３０１の厚みｔ１の約１５％以上約４０％以下になるとともに、外側層３１１と内側層３１３との合計の厚み（＝ｔ２＋ｔ３）は、リードフレーム３０１の厚みｔ１の厚みの約３０％以上約８０％以下になるように構成されている。 Further, as shown in FIG. 9, the thickness t2 of the outer layer 311 and the thickness t3 of the inner layer 313 are configured to be substantially the same thickness. The thickness t2 of the outer layer 311 and the thickness t3 of the inner layer 313 are both about 15% or more and about 40% or less of the thickness t1 of the lead frame 301, and the total of the outer layer 311 and the inner layer 313. The thickness (= t2 + t3) is configured to be about 30% to about 80% of the thickness t1 of the lead frame 301.
　なお、外側層３１１および内側層３１３が共にＡｇからなる場合、外側層３１１および内側層３１３の熱伝導率は、約４３０Ｗ／（ｍ×Ｋ）である。また、外側層３１１および内側層３１３が共にＡｌからなる場合、外側層３１１および内側層３１３の熱伝導率は、約２４０Ｗ／（ｍ×Ｋ）である。つまり、外側層３１１および内側層３１３が共にＡｇからなる場合、および、共にＡｌからなる場合のいずれにおいても、外側層３１１および内側層３１３の熱伝導率（約４３０Ｗ／（ｍ×Ｋ）（Ａｇ）および約２４０Ｗ／（ｍ×Ｋ）（Ａｌ））は、Ｆｅ層１２の熱伝導率（約８０Ｗ／（ｍ×Ｋ））よりも大きいので、ＬＥＤ素子２付近の外側層３１１の熱は、板厚方向に沿ってＦｅ層１２および内側層３１３の順にＺ２方向に伝わるよりも、板面方向に沿ってＬＥＤ素子２から離れた位置の外側層３１１に伝わりやすい。 When both the outer layer 311 and the inner layer 313 are made of Ag, the thermal conductivity of the outer layer 311 and the inner layer 313 is about 430 W / (m × K). Further, when both the outer layer 311 and the inner layer 313 are made of Al, the thermal conductivity of the outer layer 311 and the inner layer 313 is about 240 W / (m × K). That is, the thermal conductivity of the outer layer 311 and the inner layer 313 (approximately 430 W / (m × K) (Ag) in both cases where the outer layer 311 and the inner layer 313 are both made of Ag and both are made of Al. ) And about 240 W / (m × K) (Al)) is larger than the thermal conductivity of the Fe layer 12 (about 80 W / (m × K)), the heat of the outer layer 311 near the LED element 2 is Rather than being transmitted in the Z2 direction in the order of the Fe layer 12 and the inner layer 313 along the plate thickness direction, it is more easily transmitted to the outer layer 311 at a position away from the LED element 2 along the plate surface direction.
　また、外側層３１１および内側層３１３が共にＡｇからなる場合、外側層３１１および内側層３１３の線膨張係数は、約１９×１０－６／Ｋである。また、外側層３１１および内側層３１３が共にＡｌからなる場合、外側層３１１および内側層３１３の線膨張係数は、約２３．５×１０－６／Ｋである。つまり、外側層３１１および内側層３１３が共にＡｇからなる場合、および、共にＡｌからなる場合のいずれにおいても、外側層３１１および内側層３１３の線膨張係数（約１９×１０－６／Ｋ（Ａｇ）および約２３．５×１０－６／Ｋ（Ａｌ））は、Ｆｅ層１２の線膨張係数（約１２×１０－６／Ｋ）よりも大きい。また、Ｆｅ層１２を構成するＦｅまたはＦｅ合金は、外側層３１１および内側層３１３を構成するＡｇまたはＡｌよりも、機械的な強度が大きい。 When both the outer layer 311 and the inner layer 313 are made of Ag, the coefficient of linear expansion of the outer layer 311 and the inner layer 313 is about 19 × 10 −6 / K. When both the outer layer 311 and the inner layer 313 are made of Al, the coefficient of linear expansion of the outer layer 311 and the inner layer 313 is about 23.5 × 10 −6 / K. That is, in both cases where the outer layer 311 and the inner layer 313 are both made of Ag and both are made of Al, the linear expansion coefficients of the outer layer 311 and the inner layer 313 (about 19 × 10 −6 / K (Ag ) And about 23.5 × 10 −6 / K (Al)) are larger than the linear expansion coefficient of the Fe layer 12 (about 12 × 10 −6 / K). Further, Fe or Fe alloy constituting the Fe layer 12 has higher mechanical strength than Ag or Al constituting the outer layer 311 and the inner layer 313.
　また、図８に示すように、リードフレーム３０１のＡｇまたはＡｌからなる外側層３１１は、光を反射しやすい性質を有しているので、上記第１実施形態と異なり、リードフレーム３０１の一方表面３０１ａ上には光反射層は形成されていない。つまり、リードフレーム３０１の一方表面３０１ａ上には、接着部材４を介してＬＥＤ素子２が直接配置されている。これにより、光反射層を形成する製造プロセスを省略することが可能になる。また、リードフレーム３０１の外側層３１１の一方表面３０１ａは、全面に渡って、表面粗さを示す指標としてのクルトシス（Ｒｋｕ）が１０．５以下になるとともに、算術平均粗さ（Ｒａ）が０．１５μｍ以下になるように形成されている。なお、本発明の第２実施形態のその他の構造は、上記第１実施形態と同様である。 Further, as shown in FIG. 8, the outer layer 311 made of Ag or Al of the lead frame 301 has a property of easily reflecting light. Therefore, unlike the first embodiment, one surface of the lead frame 301 is provided. A light reflecting layer is not formed on 301a. That is, the LED element 2 is directly disposed on the one surface 301 a of the lead frame 301 via the adhesive member 4. Thereby, the manufacturing process for forming the light reflecting layer can be omitted. The one surface 301a of the outer layer 311 of the lead frame 301 has a kurtosis (Rku) as an index indicating the surface roughness of 10.5 or less and an arithmetic average roughness (Ra) of 0 over the entire surface. .15 μm or less. In addition, the other structure of 2nd Embodiment of this invention is the same as that of the said 1st Embodiment.
　また、第２実施形態のＬＥＤモジュール３００の製造プロセスは、一対のＣｕ板の代わりに一対のＡｇ板または一対のＡｌ板を用いる点と、光反射層を形成しない点とを除いて、上記第１実施形態と同様である。 In addition, the manufacturing process of the LED module 300 of the second embodiment is the same as that described above except that a pair of Ag plates or a pair of Al plates is used instead of the pair of Cu plates and a light reflecting layer is not formed. This is the same as in the first embodiment.
　第２実施形態では、上記のように、ＡｇまたはＡｌからなる外側層３１１を、ＬＥＤ素子２が配置される側（外側）である一方表面３０１ａに配置することによって、ＬＥＤ素子２からの熱を、ＬＥＤ素子２付近の外側層３１１の部分からＬＥＤ素子２から離れた位置の外側層３１１の部分に向けて迅速に拡散させることができるので、ＬＥＤ素子２付近のリードフレーム３０１に熱が蓄積されることを抑制することができる。この結果、リードフレーム３０１に蓄積された熱によりＬＥＤ素子２の温度が上昇することを抑制することができるので、ＬＥＤ素子２の温度上昇に起因してＬＥＤ素子２の輝度が低下することを抑制し、かつ、ＬＥＤ素子２の長寿命化を図ることができる。 In the second embodiment, as described above, the outer layer 311 made of Ag or Al is disposed on the one surface 301a that is the side (outer side) on which the LED element 2 is disposed, so that heat from the LED element 2 is generated. Since it can be rapidly diffused from the portion of the outer layer 311 near the LED element 2 toward the portion of the outer layer 311 far from the LED element 2, heat is accumulated in the lead frame 301 near the LED element 2. Can be suppressed. As a result, it is possible to suppress the temperature of the LED element 2 from rising due to the heat accumulated in the lead frame 301, and thus it is possible to suppress the brightness of the LED element 2 from decreasing due to the temperature increase of the LED element 2. In addition, the life of the LED element 2 can be extended.
　また、第２実施形態では、Ｆｅ層１２を構成するＦｅまたはＦｅ合金が、外側層３１１および内側層３１３を構成するＡｇまたはＡｌよりも機械的な強度が大きいとともに、Ｆｅ層１２の線膨張係数（約１２×１０－６／Ｋ）が外側層３１１および内側層３１３の線膨張係数（約１９×１０－６／Ｋ（Ａｇ）および約２３．５×１０－６／Ｋ（Ａｌ））よりも小さいことによって、熱膨張や外力に起因してリードフレーム３０１が変形することを抑制することができるので、リードフレーム３０１の一方表面３０１ａ上に配置されたＬＥＤ素子２にもリードフレーム３０１の変形に伴う応力が加わることを抑制することができる。この結果、ＬＥＤ素子２に応力が加わることに起因するＬＥＤ素子２の輝度の低下、および、ＬＥＤ素子２の短寿命化を抑制することができる。 In the second embodiment, the Fe or Fe alloy constituting the Fe layer 12 has a mechanical strength greater than that of Ag or Al constituting the outer layer 311 and the inner layer 313, and the linear expansion coefficient of the Fe layer 12. (About 12 × 10 −6 / K) from the linear expansion coefficients (about 19 × 10 −6 / K (Ag) and about 23.5 × 10 −6 / K (Al)) of the outer layer 311 and the inner layer 313. Since the lead frame 301 can be prevented from being deformed due to thermal expansion or external force, the LED element 2 disposed on the one surface 301a of the lead frame 301 is also deformed. It can suppress that the stress accompanying is applied. As a result, it is possible to suppress a decrease in luminance of the LED element 2 due to stress applied to the LED element 2 and a shortening of the life of the LED element 2.
　また、第２実施形態では、外側層３１１の厚みｔ２と略同一の厚みｔ３を有し、外側層３１１と同一の金属材料（ＡｇまたはＡｌ）からなる内側層３１３を、外側層３１１との間にＦｅ層１２を挟み込むとともに、基台３側（内側）の他方表面３０１ｂに配置することによって、リードフレーム３０１が外側層３１１側またはＦｅ層１２側のいずれか一方に反るように変形することを効果的に抑制することができる。これにより、リードフレーム３０１の一方表面３０１ａ上に配置されたＬＥＤ素子２にもリードフレーム３０１の変形に伴う応力が加わることを抑制することができる。この結果、ＬＥＤ素子２に応力が加わることに起因するＬＥＤ素子２の輝度の低下、および、ＬＥＤ素子２の短寿命化を抑制することができる。 In the second embodiment, the inner layer 313 having the same thickness t3 as the outer layer 311 and made of the same metal material (Ag or Al) as the outer layer 311 is disposed between the outer layer 311 and the inner layer 313. The lead frame 301 is deformed so as to warp either the outer layer 311 side or the Fe layer 12 side by placing the Fe layer 12 on the other surface 301b on the base 3 side (inner side). Can be effectively suppressed. Thereby, it can suppress that the stress accompanying a deformation | transformation of the lead frame 301 is added also to the LED element 2 arrange | positioned on the one surface 301a of the lead frame 301. FIG. As a result, it is possible to suppress a decrease in luminance of the LED element 2 due to stress applied to the LED element 2 and a shortening of the life of the LED element 2.
　また、第２実施形態では、リードフレーム３０１の外側層３１１の一方表面３０１ａを、全面に渡って、クルトシス（Ｒｋｕ）が１０．５以下になるとともに、算術平均粗さ（Ｒａ）が０．１５μｍ以下になるように形成することによって、ＬＥＤ素子２が配置される一方表面３０１ａの尖っている部分を少なくすることができるとともに、一方表面３０１ａの凹凸の高さの差（起伏）を小さくすることができるので、一方表面３０１ａにおいて十分にＬＥＤ素子２の光を反射することができる。なお、本発明の第２実施形態のその他の効果は、上記第１実施形態と同様である。 In the second embodiment, the entire surface of the one surface 301a of the outer layer 311 of the lead frame 301 has a kurtosis (Rku) of 10.5 or less and an arithmetic average roughness (Ra) of 0.15 μm. By forming the LED element 2 as follows, the pointed portion of the one surface 301a where the LED element 2 is arranged can be reduced, and the height difference (undulation) of the one surface 301a can be reduced. Therefore, the light of the LED element 2 can be sufficiently reflected on the one surface 301a. The remaining effects of the second embodiment of the present invention are similar to those of the aforementioned first embodiment.
　[実施例]
　次に、図３、図５および図９～図１８を参照して、本発明の効果を確認するために行った板面方向の熱伝導率、板厚方向の熱伝導率および線膨張係数のシミュレーションと、表面粗さの確認実験と、０．２％耐力の確認実験について説明する。 [Example]
Next, referring to FIG. 3, FIG. 5 and FIG. 9 to FIG. 18, the thermal conductivity in the plate surface direction, the thermal conductivity in the plate thickness direction, and the coefficient of linear expansion performed to confirm the effect of the present invention. Simulation, confirmation experiment of surface roughness, and confirmation experiment of 0.2% proof stress will be described.
　（シミュレーション）
　以下に説明するシミュレーションでは、上記第１実施形態のリードフレーム１に対応する実施例１－１～１－９として、外側Ｃｕ層１１、Ｆｅ層１２および内側Ｃｕ層１３が板厚方向に積層された状態で接合された、３層構造のクラッド材からなるリードフレーム１を想定した。ここで、実施例１－１～１－９のリードフレーム１として、それぞれ、外側Ｃｕ層１１の厚みｔ２および内側Ｃｕ層１３の厚みｔ３（図３参照）が、リードフレーム１の厚みｔ１（図３参照）の５％、１０％、１５％、２０％、２５％、３０％、３５％、４０％および４５％である場合を想定した。つまり、実施例１－１～１－９のリードフレーム１として、Ｃｕが占める厚みの比率が、それぞれ、１０％、２０％、３０％、４０％、５０％、６０％、７０％、８０％および９０％であるようなモデル化を行った。したがって、実施例１－１～１－９のリードフレーム１では、Ｆｅ層１２の厚みｔ４（図３参照）は、それぞれ、リードフレーム１の厚みｔ１の９０％、８０％、７０％、６０％、５０％、４０％、３０％、２０％および１０％になる。 (simulation)
In the simulation described below, as Examples 1-1 to 1-9 corresponding to the lead frame 1 of the first embodiment, an outer Cu layer 11, an Fe layer 12, and an inner Cu layer 13 are laminated in the plate thickness direction. A lead frame 1 made of a clad material having a three-layer structure joined in a state of being in the above state was assumed. Here, in the lead frames 1 of Examples 1-1 to 1-9, the thickness t2 of the outer Cu layer 11 and the thickness t3 of the inner Cu layer 13 (see FIG. 3) are the thickness t1 of the lead frame 1 (see FIG. 3). 3)), 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40% and 45%. That is, in the lead frames 1 of Examples 1-1 to 1-9, the ratio of the thickness occupied by Cu is 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, respectively. And 90% modeling. Therefore, in the lead frames 1 of Examples 1-1 to 1-9, the thickness t4 (see FIG. 3) of the Fe layer 12 is 90%, 80%, 70%, and 60% of the thickness t1 of the lead frame 1, respectively. , 50%, 40%, 30%, 20% and 10%.
　また、実施例１－１～１－９に対する比較例１－１として、Ｆｅのみからなるリードフレーム（Ｃｕを全く含まないリードフレーム）を想定した。また、比較例１－２として、Ｃｕのみからなるリードフレーム（Ｆｅを全く含まないリードフレーム）を想定した。 Further, as Comparative Example 1-1 with respect to Examples 1-1 to 1-9, a lead frame made only of Fe (lead frame containing no Cu) was assumed. In addition, as Comparative Example 1-2, a lead frame made only of Cu (a lead frame containing no Fe) was assumed.
　また、上記第２実施形態のリードフレーム３０１に対応する実施例２－１～２－９として、Ａｇからなる外側層３１１、Ｆｅ層１２およびＡｇからなる内側層３１３が板厚方向に積層された状態で接合された、３層構造のクラッド材からなるリードフレーム３０１を想定した。ここで、実施例２－１～２－９のリードフレーム３０１として、それぞれ、Ａｇからなる外側層３１１の厚みｔ２および内側層３１３の厚みｔ３（図９参照）が、リードフレーム３０１の厚みｔ１（図９参照）の５％、１０％、１５％、２０％、２５％、３０％、３５％、４０％および４５％である場合を想定した。つまり、実施例２－１～２－９のリードフレーム３０１として、Ａｇが占める厚みの比率が、それぞれ、１０％、２０％、３０％、４０％、５０％、６０％、７０％、８０％および９０％であるようなモデル化を行った。また、実施例２－１～２－９に対する比較例２－１として、Ｆｅのみからなるリードフレーム（Ａｇを全く含まないリードフレーム）を想定した。なお、比較例２－１は、上記比較例１－１と同一である。また、比較例２－２として、Ａｇのみからなるリードフレーム（Ｆｅを全く含まないリードフレーム）を想定した。 Further, as Examples 2-1 to 2-9 corresponding to the lead frame 301 of the second embodiment, an outer layer 311 made of Ag, an Fe layer 12 and an inner layer 313 made of Ag were laminated in the plate thickness direction. A lead frame 301 made of a clad material having a three-layer structure joined in a state is assumed. Here, as the lead frames 301 of Examples 2-1 to 2-9, the thickness t2 of the outer layer 311 and the thickness t3 (see FIG. 9) of the inner layer 313 made of Ag are the thickness t1 of the lead frame 301 (see FIG. 9). The case of 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40% and 45% of FIG. 9) was assumed. That is, the ratio of the thickness occupied by Ag in the lead frames 301 of Examples 2-1 to 2-9 is 10%, 20%, 30%, 40%, 50%, 60%, 70%, and 80%, respectively. And 90% modeling. Further, as Comparative Example 2-1 with respect to Examples 2-1 to 2-9, a lead frame made only of Fe (lead frame containing no Ag) was assumed. The comparative example 2-1 is the same as the comparative example 1-1. In addition, as Comparative Example 2-2, a lead frame made only of Ag (a lead frame containing no Fe) was assumed.
　また、上記第２実施形態のリードフレーム３０１に対応する実施例３－１～３－１０として、Ａｌからなる外側層３１１、Ｆｅ層１２およびＡｌからなる内側層３１３が板厚方向に積層された状態で接合された、３層構造のクラッド材からなるリードフレーム３０１を想定した。ここで、実施例３－１～３－１０のリードフレーム３０１として、それぞれ、Ａｌからなる外側層３１１の厚みｔ２および内側層３１３の厚みｔ３（図９参照）が、リードフレーム３０１の厚みｔ１（図９参照）の５％、１０％、１５％、２０％、２２．５％、２５％、３０％、３５％、４０％および４５％である場合を想定した。つまり、実施例３－１～３－１０のリードフレーム３０１として、Ａｌが占める厚みの比率が、それぞれ、１０％、２０％、３０％、４０％、４５％、５０％、６０％、７０％、８０％および９０％であるようなモデル化を行った。また、実施例３－１～３－１０に対する比較例３－１として、Ｆｅのみからなるリードフレーム（Ａｌを全く含まないリードフレーム）を想定した。なお、比較例３－１は、上記比較例１－１および２－１と同一である。また、比較例３－２として、Ａｌのみからなるリードフレーム（Ｆｅを全く含まないリードフレーム）を想定した。 Further, as Examples 3-1 to 3-10 corresponding to the lead frame 301 of the second embodiment, an outer layer 311 made of Al, an Fe layer 12 and an inner layer 313 made of Al were laminated in the thickness direction. A lead frame 301 made of a clad material having a three-layer structure joined in a state is assumed. Here, as the lead frames 301 of Examples 3-1 to 3-10, the thickness t2 of the outer layer 311 and the thickness t3 (see FIG. 9) of the inner layer 313 made of Al are the thickness t1 ( 5%, 10%, 15%, 20%, 22.5%, 25%, 30%, 35%, 40%, and 45%. That is, in the lead frames 301 of Examples 3-1 to 3-10, the ratio of the thickness occupied by Al is 10%, 20%, 30%, 40%, 45%, 50%, 60%, and 70%, respectively. , 80% and 90% were modeled. Further, as Comparative Example 3-1, compared with Examples 3-1 to 3-10, a lead frame made of only Fe (lead frame containing no Al) was assumed. Comparative Example 3-1 is the same as Comparative Examples 1-1 and 2-1. In addition, as Comparative Example 3-2, a lead frame made only of Al (lead frame containing no Fe) was assumed.
　また、比較例１－１、２－１および３－１のＦｅのみからなるリードフレームでは、Ｆｅの熱伝導率として７８．２Ｗ／（ｍ×Ｋ）を用いるとともに、線膨張係数として１２．１×１０－６／Ｋを用いた。また、比較例１－２のＣｕのみからなるリードフレームでは、Ｃｕの熱伝導率として３９４．０Ｗ／（ｍ×Ｋ）を用いるとともに、線膨張係数として１７．０×１０－６／Ｋを用いた。また、比較例２－２のＡｇのみからなるリードフレームでは、Ａｇの熱伝導率として４２５．０Ｗ／（ｍ×Ｋ）を用いるとともに、線膨張係数として１９．１×１０－６／Ｋを用いた。また、比較例３－２のＡｌのみからなるリードフレームでは、Ａｌの熱伝導率として２３８．０Ｗ／（ｍ×Ｋ）を用いるとともに、線膨張係数として２３．５×１０－６／Ｋを用いた。 Further, in the lead frames made of only Fe of Comparative Examples 1-1, 2-1 and 3-1, 78.2 W / (m × K) is used as the thermal conductivity of Fe and the linear expansion coefficient is 12.1. × 10 −6 / K was used. Further, in the lead frame made only of Cu of Comparative Example 1-2, 394.0 W / (m × K) is used as the thermal conductivity of Cu, and 17.0 × 10 −6 / K is used as the linear expansion coefficient. It was. In addition, the lead frame made of only Ag of Comparative Example 2-2 uses 425.0 W / (m × K) as the thermal conductivity of Ag and uses 19.1 × 10 −6 / K as the linear expansion coefficient. It was. Further, in the lead frame made of only Al of Comparative Example 3-2, 238.0 W / (m × K) is used as the thermal conductivity of Al, and 23.5 × 10 −6 / K is used as the linear expansion coefficient. It was.
　そして、上記比較例の数値と、所定の算出式とを用いて、実施例１－１～１－９、実施例２－１～２－９および実施例３－１～３－１０のそれぞれにおいて、板面方向の熱伝導率、板厚方向の熱伝導率および線膨張係数を算出した。 In each of Examples 1-1 to 1-9, Examples 2-1 to 2-9, and Examples 3-1 to 3-10, using the numerical values of the comparative example and a predetermined calculation formula The thermal conductivity in the plate surface direction, the thermal conductivity in the plate thickness direction, and the linear expansion coefficient were calculated.
　図１０および図１１に示すシミュレーション結果から、リードフレームにおけるＣｕの占める厚みの比率を大きくすることによって、板面方向の熱伝導率、板厚方向の熱伝導率および線膨張係数のいずれも大きくなることが分かった。この結果から、リードフレームにおけるＣｕの占める厚みの比率を大きくすることによって、ＬＥＤ素子付近の熱を、リードフレームの全体により拡散させることが可能になることが判明した。 From the simulation results shown in FIGS. 10 and 11, by increasing the ratio of the thickness occupied by Cu in the lead frame, all of the thermal conductivity in the plate surface direction, the thermal conductivity in the plate thickness direction, and the linear expansion coefficient are increased. I understood that. From this result, it was found that by increasing the ratio of the thickness occupied by Cu in the lead frame, the heat in the vicinity of the LED element can be diffused throughout the lead frame.
　また、リードフレームにおけるＣｕの占める厚みの比率が３０％以上の場合（実施例１－３～１－９および比較例１－２）、板面方向の熱伝導率が１５０Ｗ／（ｍ×Ｋ）以上になり、板厚方向の熱伝導率が１００Ｗ／（ｍ×Ｋ）以上になることが分かった。この結果から、Ｃｕの占める厚みの比率を３０％以上にすることによって、ＬＥＤ素子付近の熱を、リードフレームの全体に十分に拡散させることが可能であると考えられる。さらに、リードフレームにおけるＣｕの占める厚みの比率が９０％以下の場合（実施例１－１～１－９および比較例１－１）、線膨張係数が１７×１０－６／Ｋ未満になることが分かった。この結果から、Ｃｕの占める厚みの比率を９０％以下にすることによって、リードフレームの熱膨張を十分に抑制することができると考えられるので、熱膨張に起因するリードフレームの変形を十分に抑制することが可能であると考えられる。 When the ratio of the thickness of Cu in the lead frame is 30% or more (Examples 1-3 to 1-9 and Comparative Example 1-2), the thermal conductivity in the plate surface direction is 150 W / (m × K). Thus, it was found that the thermal conductivity in the plate thickness direction was 100 W / (m × K) or more. From this result, it is considered that the heat in the vicinity of the LED element can be sufficiently diffused throughout the lead frame by setting the ratio of the thickness occupied by Cu to 30% or more. Further, when the ratio of the thickness occupied by Cu in the lead frame is 90% or less (Examples 1-1 to 1-9 and Comparative Example 1-1), the linear expansion coefficient should be less than 17 × 10 −6 / K. I understood. From this result, it is considered that the thermal expansion of the lead frame can be sufficiently suppressed by setting the ratio of the thickness occupied by Cu to 90% or less, so that the deformation of the lead frame due to the thermal expansion is sufficiently suppressed. It is considered possible to do.
　また、図１２および図１３に示すシミュレーション結果から、リードフレームにおけるＡｇの占める厚みの比率を大きくすることによって、板面方向の熱伝導率、板厚方向の熱伝導率および線膨張係数のいずれも大きくなることが分かった。この結果から、リードフレームにおけるＡｇの占める厚みの比率を大きくすることによって、ＬＥＤ素子付近の熱を、リードフレームの全体により拡散させることが可能になることが判明した。 Further, from the simulation results shown in FIG. 12 and FIG. 13, by increasing the ratio of the thickness occupied by Ag in the lead frame, the thermal conductivity in the plate surface direction, the thermal conductivity in the plate thickness direction, and the linear expansion coefficient are all. It turns out that it grows. From this result, it was found that by increasing the ratio of the thickness occupied by Ag in the lead frame, the heat in the vicinity of the LED element can be diffused throughout the lead frame.
　また、リードフレームにおけるＡｇの占める厚みの比率が３０％以上の場合（実施例２－３～２－９および比較例２－２）、板面方向の熱伝導率が１５０Ｗ／（ｍ×Ｋ）以上になり、板厚方向の熱伝導率が１００Ｗ／（ｍ×Ｋ）以上になることが分かった。この結果から、Ａｇの占める厚みの比率を３０％以上にすることによって、ＬＥＤ素子付近の熱を、リードフレームの全体に十分に拡散させることが可能であると考えられる。さらに、リードフレームにおけるＡｇの占める厚みの比率が８０％以下の場合（実施例２－１～２－８および比較例２－１）、線膨張係数が１７×１０－６／Ｋ以下になることが分かった。この結果から、Ａｇの占める厚みの比率を８０％以下にすることによって、リードフレームの熱膨張を十分に抑制することができると考えられるので、熱膨張に起因するリードフレームの変形を十分に抑制することが可能であると考えられる。 Further, when the ratio of the thickness occupied by Ag in the lead frame is 30% or more (Examples 2-3 to 2-9 and Comparative Example 2-2), the thermal conductivity in the plate surface direction is 150 W / (m × K). Thus, it was found that the thermal conductivity in the plate thickness direction was 100 W / (m × K) or more. From this result, it is considered that the heat in the vicinity of the LED element can be sufficiently diffused throughout the lead frame by setting the ratio of the thickness occupied by Ag to 30% or more. Furthermore, when the ratio of the thickness occupied by Ag in the lead frame is 80% or less (Examples 2-1 to 2-8 and Comparative Example 2-1), the linear expansion coefficient is 17 × 10 −6 / K or less. I understood. From this result, it is considered that the thermal expansion of the lead frame can be sufficiently suppressed by setting the ratio of the thickness occupied by Ag to 80% or less, so that the deformation of the lead frame due to the thermal expansion is sufficiently suppressed. It is considered possible to do.
　また、図１４および図１５に示すシミュレーション結果から、リードフレームにおけるＡｌの占める厚みの比率を大きくすることによって、板面方向の熱伝導率、板厚方向の熱伝導率および線膨張係数のいずれも大きくなることが分かった。この結果から、リードフレームにおけるＡｌの占める厚みの比率を大きくすることによって、発光素子付近の熱を、リードフレームの全体により拡散させることが可能になることが判明した。 Further, from the simulation results shown in FIG. 14 and FIG. 15, by increasing the ratio of the thickness occupied by Al in the lead frame, all of the thermal conductivity in the plate surface direction, the thermal conductivity in the plate thickness direction, and the linear expansion coefficient are obtained. It turns out that it grows. From this result, it was found that by increasing the ratio of the thickness of Al in the lead frame, the heat near the light emitting element can be diffused throughout the lead frame.
　また、リードフレームにおけるＡｌの占める厚みの比率が４５％以上の場合（実施例３－５～３－１０および比較例３－２）、板面方向の熱伝導率が１５０Ｗ／（ｍ×Ｋ）以上になり、板厚方向の熱伝導率が１００Ｗ／（ｍ×Ｋ）以上になることが分かった。この結果から、Ａｌの占める厚みの比率を４５％以上にすることによって、ＬＥＤ素子付近の熱を、リードフレームの全体に十分に拡散させることが可能であると考えられる。なお、リードフレームにおけるＡｌの占める厚みの比率が３０％の場合（実施例３－３）、板面方向の熱伝導率が１５０Ｗ／（ｍ×Ｋ）未満（１２６．１Ｗ／（ｍ×Ｋ））になり、板厚方向の熱伝導率が１００Ｗ／（ｍ×Ｋ）未満（９７．９Ｗ／（ｍ×Ｋ））になり、Ａｌの占める厚みの比率が４０％の場合（実施例３－４）、板面方向の熱伝導率が１５０Ｗ／（ｍ×Ｋ）未満（１４２．１Ｗ／（ｍ×Ｋ））になったものの、ＡｌはＣｕやＡｇに近い性質を有しているので、ある程度、ＬＥＤ素子付近の熱を、リードフレームの全体に十分に拡散させることが可能であると考えられる。 When the ratio of the thickness of Al in the lead frame is 45% or more (Examples 3-5 to 3-10 and Comparative Example 3-2), the thermal conductivity in the plate surface direction is 150 W / (m × K). Thus, it was found that the thermal conductivity in the plate thickness direction was 100 W / (m × K) or more. From this result, it is considered that the heat in the vicinity of the LED element can be sufficiently diffused throughout the lead frame by setting the ratio of the thickness occupied by Al to 45% or more. When the thickness ratio of Al in the lead frame is 30% (Example 3-3), the thermal conductivity in the plate surface direction is less than 150 W / (m × K) (126.1 W / (m × K). When the thermal conductivity in the thickness direction is less than 100 W / (m × K) (97.9 W / (m × K)) and the ratio of the thickness occupied by Al is 40% (Example 3- 4) Although the thermal conductivity in the plate surface direction is less than 150 W / (m × K) (142.1 W / (m × K)), Al has a property close to Cu and Ag. It is considered that the heat in the vicinity of the LED element can be sufficiently diffused to the entire lead frame to some extent.
　さらに、リードフレームにおけるＡｌの占める厚みの比率が６０％以下の場合（実施例３－１～３－７および比較例３－１）、線膨張係数が１７×１０－６／Ｋ以下になることが分かった。この結果から、Ａｌの占める厚みの比率を６０％以下にすることによって、リードフレームの熱膨張を十分に抑制することができると考えられるので、熱膨張に起因するリードフレームの変形を十分に抑制することが可能であると考えられる。なお、リードフレームにおけるＡｌの占める厚みの比率が７０％以上８０％以下の場合（実施例３－８および３－９）、線膨張係数が１７×１０－６／Ｋより大きくなった（実施例３－８（１７．１×１０－６／Ｋ）および実施例３－９（１８．６×１０－６／Ｋ））ものの、ＡｌはＣｕやＡｇに近い性質を有しているので、ある程度、リードフレームの熱膨張を抑制することが可能であると考えられる。 Furthermore, when the ratio of the thickness of Al in the lead frame is 60% or less (Examples 3-1 to 3-7 and Comparative Example 3-1), the linear expansion coefficient is 17 × 10 −6 / K or less. I understood. From this result, it is considered that the thermal expansion of the lead frame can be sufficiently suppressed by setting the ratio of the thickness occupied by Al to 60% or less, so that the deformation of the lead frame due to the thermal expansion is sufficiently suppressed. It is considered possible to do. When the ratio of the thickness of Al in the lead frame is 70% or more and 80% or less (Examples 3-8 and 3-9), the linear expansion coefficient is larger than 17 × 10 −6 / K (Examples). Although 3-8 (17.1 × 10 −6 / K) and Example 3-9 (18.6 × 10 −6 / K)), Al has properties close to that of Cu and Ag. It is considered that the thermal expansion of the lead frame can be suppressed.
　（表面粗さの確認実験）
　以下に説明する表面粗さの確認実験では、上記第１実施形態に対応する実施例１－１０および１－１１のリードフレーム１を作製するとともに、実施例１－１０および１－１１に対する比較例として、比較例１－３および１－４のリードフレームを作製した。具体的には、実施例１－１０、１－１１、比較例１－３および１－４のリードフレームとして、外側Ｃｕ層１１の厚みｔ２、Ｆｅ層１２の厚みｔ４および内側Ｃｕ層１３の厚みｔ３（図３参照）が、それぞれ、リードフレームの厚みｔ１（図３参照）の２０％、６０％および２０％である板状のリードフレームを作製した。 (Surface roughness confirmation experiment)
In the surface roughness confirmation experiment described below, lead frames 1 of Examples 1-10 and 1-11 corresponding to the first embodiment are manufactured, and a comparative example with respect to Examples 1-10 and 1-11 As a result, lead frames of Comparative Examples 1-3 and 1-4 were produced. Specifically, as the lead frames of Examples 1-10 and 1-11 and Comparative Examples 1-3 and 1-4, the thickness t2 of the outer Cu layer 11, the thickness t4 of the Fe layer 12, and the thickness of the inner Cu layer 13 are used. Plate-shaped lead frames having t3 (see FIG. 3) of 20%, 60% and 20% of the lead frame thickness t1 (see FIG. 3) were produced.
　ここで、比較例１－３のリードフレーム（リードフレーム用材料）を作製する際の一方表面１ａに接触するローラ２０１ａ（図５参照）として、ローラ表面の算術平均粗さ（Ｒａ）が０．１９μｍ以上０．３０μｍ以下の値を有するローラ２０１ａを用いて圧延した。つまり、比較例１－３では、ローラ表面の算術平均粗さの値が一定ではないとともに、ローラ表面の算術平均粗さが大きいローラ２０１ａを用いた。 Here, as the roller 201a (see FIG. 5) that contacts one surface 1a when the lead frame (lead frame material) of Comparative Example 1-3 is manufactured, the arithmetic average roughness (Ra) of the roller surface is 0. It rolled using the roller 201a which has a value of 19 micrometers or more and 0.30 micrometers or less. That is, in Comparative Example 1-3, the roller 201a having a large arithmetic average roughness on the roller surface was used while the arithmetic average roughness on the roller surface was not constant.
　また、実施例１－１０においては、ローラ表面の算術平均粗さが０．０５μｍであるローラ２０１ａを用いて圧延した。つまり、実施例１－１０では、比較例１－３よりもローラ表面の算術平均粗さが小さいローラ２０１ａを用いた。また、実施例１－１１においては、ローラ表面の算術平均粗さが０．０２５μｍであるローラ２０１ａを用いて圧延した。つまり、実施例１－１１では、比較例１－３および実施例１－１０よりも、ローラ表面の算術平均粗さがさらに小さいローラ２０１ａを用いた。 Further, in Example 1-10, rolling was performed using a roller 201a having an arithmetic average roughness of the roller surface of 0.05 μm. That is, in Example 1-10, the roller 201a having a smaller arithmetic average roughness on the roller surface than that of Comparative Example 1-3 was used. In Example 1-11, rolling was performed using a roller 201a having an arithmetic average roughness of the roller surface of 0.025 μm. That is, in Example 1-11, the roller 201a having a smaller arithmetic average roughness on the roller surface was used compared to Comparative Example 1-3 and Example 1-10.
　また、比較例１－４においては、ローラ表面の算術平均粗さが０．０２５μｍであるローラ２０１ａを用いて圧延するとともに、圧延後のリードフレームの一方表面１ａ（図５参照）を乾式ラッピングによって研磨した。 In Comparative Example 1-4, rolling was performed using a roller 201a having an arithmetic average roughness of the roller surface of 0.025 μm, and one surface 1a (see FIG. 5) of the lead frame after rolling was dry lapped. Polished.
　その後、所定の計測機器を用いて、リードフレームの一方表面１ａの表面粗さを計測した。そして、得られた計測結果を用いて、圧延方向（Ｙ方向）および幅方向（Ｘ方向）における算術平均粗さ（Ｒａ）と、クルトシス（Ｒｋｕ）とをそれぞれ算出した。 Thereafter, the surface roughness of the one surface 1a of the lead frame was measured using a predetermined measuring device. And the arithmetic mean roughness (Ra) in a rolling direction (Y direction) and the width direction (X direction) and kurtosis (Rku) were each calculated using the obtained measurement result.
　また、実施例１－１０、実施例１－１１、比較例１－３および比較例１－４の各々のリードフレームに対して、ローラ２０１ａが接触した側の一方表面１ａ上に、メッキ液に接触させることによって、Ａｇメッキ層からなる光反射層１４（図３参照）に対応するメッキ層を形成した。そして、メッキ層の状態を観察することによって、メッキ層の欠陥の有無を判断した。 Further, a plating solution is applied to one surface 1a on the side in contact with the roller 201a with respect to each of the lead frames of Example 1-10, Example 1-11, Comparative Example 1-3, and Comparative Example 1-4. By contacting, a plating layer corresponding to the light reflection layer 14 (see FIG. 3) made of an Ag plating layer was formed. And the presence or absence of the defect of a plating layer was judged by observing the state of a plating layer.
　図１６に示すように、ローラ表面の算術平均粗さ（Ｒａ）が０．０５μｍ以下のローラ２０１ａを用いた実施例１－１０、実施例１－１１および比較例１－４において、算術平均粗さ（Ｒａ）を０．１５μｍ以下にすることができることが判明した。また、ローラ表面の算術平均粗さ（Ｒａ）が０．０２５μｍ以下のローラ２０１ａを用いるとともに、乾式ラッピングによって研磨した場合（比較例１－４）を除いた実施例１－１０、実施例１－１１および比較例１－３において、クルトシス（Ｒｋｕ）を１０．５以下にすることができることが判明した。 As shown in FIG. 16, in Example 1-10, Example 1-11 and Comparative Example 1-4 using a roller 201a having a roller surface arithmetic mean roughness (Ra) of 0.05 μm or less, the arithmetic mean roughness It was found that the thickness (Ra) can be 0.15 μm or less. In addition, Examples 1-10 and Example 1 except that the roller 201a having an arithmetic average roughness (Ra) of the roller surface of 0.025 μm or less is used and polishing is performed by dry lapping (Comparative Example 1-4). 11 and Comparative Example 1-3, it was found that kurtosis (Rku) could be 10.5 or less.
　また、実施例１－１０および１－１１の場合、メッキ層の欠陥は観察されなかった。これは、実施例１－１０および１－１１の場合には、ローラ表面の算術平均粗さ（Ｒａ）が０．０５μｍ以下であり十分に小さいので、ローラ２０１ａの表面が接触するリードフレーム１（リードフレーム用材料２００）の一方表面１ａもローラ２０１ａの表面に対応して、算術平均粗さが０．１５μｍ以下になるとともに、クルトシスが１０．５以下になったと考えられる。この結果、一方表面１ａを、凹凸形状がなだらかで、かつ、起伏が小さくなるように形成することができたので、一方表面１ａ上に形成されたメッキ層に欠陥が発生しなかったと考えられる。 In Examples 1-10 and 1-11, no defects in the plating layer were observed. This is because in Examples 1-10 and 1-11, the arithmetic average roughness (Ra) of the roller surface is 0.05 μm or less, which is sufficiently small, so that the lead frame 1 (the surface of the roller 201a is in contact) Corresponding to the surface of the roller 201a, the one surface 1a of the lead frame material 200) is considered to have an arithmetic average roughness of 0.15 μm or less and a kurtosis of 10.5 or less. As a result, the one surface 1a can be formed so that the uneven shape is gentle and the undulations are small, and it is considered that no defect occurred in the plating layer formed on the one surface 1a.
　一方、比較例１－３および１－４の場合、メッキ層の欠陥が観察された。これは、比較例１－３では、ローラ表面の算術平均粗さ（Ｒａ）が０．１９μｍ以上０．３０μｍ以下であり大きいため、ローラ２０１ａの表面が接触するリードフレーム（リードフレーム用材料）の一方表面１ａもローラ２０１ａの表面に応じて、一方表面１ａの凹凸形状の起伏が大きくなったと考えられる。この結果、起伏が大きい凹凸形状に起因して、一方表面１ａ上に形成されたメッキ層に欠陥が発生したと考えられる。また、比較例１－４では、ローラ２０１ａで圧延した後に乾式ラッピングによって研磨することによって、一方表面１ａの算術平均粗さをさらに小さくすることができたものの、一方表面１ａの凹凸形状が尖りやすくなってしまったと考えられる。この結果、尖った凹凸形状に起因して、一方表面１ａ上に形成されたメッキ層に欠陥が発生したと考えられる。 On the other hand, in Comparative Examples 1-3 and 1-4, defects in the plating layer were observed. This is because, in Comparative Example 1-3, the arithmetic average roughness (Ra) of the roller surface is 0.19 μm or more and 0.30 μm or less, so that the surface of the roller 201a is in contact with the lead frame (lead frame material). On the other hand, it is considered that the unevenness of the concavo-convex shape of the one surface 1a is increased according to the surface of the roller 201a. As a result, it is considered that a defect occurred in the plating layer formed on the one surface 1a due to the uneven shape having large undulations. In Comparative Example 1-4, the arithmetic average roughness of the one surface 1a can be further reduced by rolling with the roller 201a and then polishing by dry lapping, but the uneven shape of the one surface 1a tends to be sharp. It is thought that it has become. As a result, it is considered that a defect occurred in the plating layer formed on the one surface 1a due to the sharp uneven shape.
　この結果、実施例１－１０および１－１１のように、ローラ表面の算術平均粗さが０．０５μｍ以下のローラ２０１ａを用いて圧延するとともに、乾式ラッピングによって研磨しないことによって、リードフレーム１の一方表面１ａの算術平均粗さを０．１５μｍ以下にするとともに、クルトシスを１０．５以下にすることができることが判明した。さらに、算術平均粗さが０．１５μｍ以下であるとともに、クルトシスが１０．５以下である一方表面１ａを形成することによって、一方表面１ａ上に欠陥のない良質なメッキ層を形成することが可能であることが判明した。これにより、実施例１－１０および１－１１のような製造方法によりリードフレーム１を作製した場合には、リードフレーム１の一方表面１ａにおいてレーザ素子２から照射された光を十分に反射することができ、その結果、ＬＥＤモジュール１００の光量が低下することを抑制することが可能であると考えられる。 As a result, as in Examples 1-10 and 1-11, by rolling using the roller 201a having an arithmetic average roughness of the roller surface of 0.05 μm or less and not polishing by dry lapping, the lead frame 1 On the other hand, it was found that the arithmetic average roughness of the surface 1a can be 0.15 μm or less and the kurtosis can be 10.5 or less. Furthermore, by forming the one surface 1a having an arithmetic average roughness of 0.15 μm or less and a kurtosis of 10.5 or less, it is possible to form a high-quality plated layer having no defects on the one surface 1a. It turned out to be. Thereby, when the lead frame 1 is manufactured by the manufacturing method as in Examples 1-10 and 1-11, the light irradiated from the laser element 2 is sufficiently reflected on the one surface 1a of the lead frame 1. As a result, it is considered possible to suppress a decrease in the light amount of the LED module 100.
　（０．２％耐力の確認実験）
　以下に説明する０．２％耐力の確認実験では、２５℃（室温）、２００℃、３００℃、４００℃および６００℃の温度条件下で、Ｃｕからなる試験体およびＦｅからなる試験体に対して、それぞれ、引張試験を行った。その際、試験体（ＣｕとＦｅ）が通常状態から０．２％伸びた際の試験体に加えられている応力を測定することによって、０．２％耐力（降伏強度）を測定した。 (Confirmation test of 0.2% proof stress)
In the confirmation experiment of 0.2% proof stress described below, the specimen made of Cu and the specimen made of Fe were tested at 25 ° C. (room temperature), 200 ° C., 300 ° C., 400 ° C. and 600 ° C. Each was subjected to a tensile test. At that time, 0.2% proof stress (yield strength) was measured by measuring the stress applied to the test body when the test body (Cu and Fe) was extended 0.2% from the normal state.
　図１７および図１８に示した実験結果から、Ｃｕの０．２％耐力は、２００℃よりも高い高温条件下で低下することが判明した。これは、２００℃よりも高い高温条件下ではＣｕが焼鈍されるため、機械的な強度が低下したからであると考えられる。一方、Ｆｅの０．２％耐力は、２００℃以上４００℃以下の高温条件下においても、４００ＭＰａ以上で保持されることが判明した。これは、２００℃以上４００℃以下の高温条件下では、Ｆｅは焼鈍されずに、機械的な強度が低下しなかったからであると考えられる。 From the experimental results shown in FIGS. 17 and 18, it was found that the 0.2% proof stress of Cu decreases under high temperature conditions higher than 200 ° C. This is probably because Cu is annealed under a high temperature condition higher than 200 ° C., so that the mechanical strength is lowered. On the other hand, it has been found that the 0.2% proof stress of Fe is maintained at 400 MPa or higher even under high temperature conditions of 200 ° C. or higher and 400 ° C. or lower. This is presumably because Fe was not annealed under high temperature conditions of 200 ° C. or higher and 400 ° C. or lower, and the mechanical strength did not decrease.
　この結果、リードフレーム１に、２００℃以上４００℃以下の高温条件下においても０．２％耐力が低下しないＦｅからなるＦｅ層１２を設けることによって、２００℃以上４００℃以下の高温条件下においてもリードフレーム１の機械的強度の低下を抑制することが可能であることが判明した。 As a result, by providing the lead frame 1 with the Fe layer 12 made of Fe that does not decrease the 0.2% proof stress even under high temperature conditions of 200 ° C. or higher and 400 ° C. or lower, It has also been found that it is possible to suppress a decrease in the mechanical strength of the lead frame 1.
　なお、今回開示された実施形態は、すべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は、上記した実施形態の説明ではなく特許請求の範囲によって示され、さらに特許請求の範囲と均等の意味および範囲内でのすべての変更が含まれる。 In addition, it should be thought that embodiment disclosed this time is an illustration and restrictive at no points. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and further includes all modifications within the meaning and scope equivalent to the scope of claims for patent.
　たとえば、上記第１および第２実施形態では、リードフレーム１（３０１）を、基台３の上面３ａの端部近傍と、Ｘ方向の両側面３ｂと、基台３の下面３ｃの一部とに沿うように折り曲げた例を示したが、本発明はこれに限られない。たとえば、図１９に示す本発明の第１実施形態の第１変形例のように、ＬＥＤモジュール４００のリードフレーム４０１を基台３の下面３ｃを覆わずに、基台３から離れる方向に向かって曲げ加工されてもよい。また、リードフレームを折り曲げずに、基台の上面にのみ配置してもよい。なお、ＬＥＤモジュール４００は、本発明の「発光モジュール」の一例であり、リードフレーム４０１は、本発明の「発光素子用基板」の一例である。 For example, in the first and second embodiments, the lead frame 1 (301) is formed near the end of the upper surface 3a of the base 3, the both side surfaces 3b in the X direction, and a part of the lower surface 3c of the base 3. However, the present invention is not limited to this. For example, as in the first modification of the first embodiment of the present invention shown in FIG. 19, the lead frame 401 of the LED module 400 does not cover the lower surface 3 c of the base 3 and moves away from the base 3. It may be bent. Further, the lead frame may be disposed only on the upper surface of the base without being bent. The LED module 400 is an example of the “light emitting module” in the present invention, and the lead frame 401 is an example of the “light emitting element substrate” in the present invention.
　また、上記第１および第２実施形態では、リードフレーム１（３０１）を、略一様の厚みｔ１を有するように形成した例を示したが、本発明はこれに限られない。たとえば、図２０に示す本発明の第１実施形態の第２変形例のように、ＬＥＤモジュール５００のリードフレーム５０１のうち、ＬＥＤ素子２が配置される基台３の上面３ａに対応する厚板部５０１ｃの厚みを他の領域（薄板部５０１ｄ）の厚みよりも大きくしてもよい。このように厚板部５０１ｃを設けることによって、ＬＥＤ素子２付近の熱を、リードフレーム５０１の全体に効果的に拡散させることが可能である。なお、厚板部５０１ｃにおけるリードフレーム５０１は、外側Ｃｕ層１１、Ｆｅ層１２および内側Ｃｕ層１３の３層構造（図３参照）から構成されている。一方、薄板部５０１ｄにおけるリードフレーム５０１は、厚板部５０１ｃと同じ材質を用いるとともに、外側Ｃｕ層１１、Ｆｅ層１２および内側Ｃｕ層１３の３層構造であってもよい。また、薄板部５０１ｄにおけるリードフレーム５０１は、内側Ｃｕ層１３のみであってもよいし、Ｆｅ層１２および内側Ｃｕ層１３の２層構造であってもよい。なお、ＬＥＤモジュール５００は、本発明の「発光モジュール」の一例であり、リードフレーム５０１は、本発明の「発光素子用基板」の一例である。 In the first and second embodiments, the example in which the lead frame 1 (301) is formed so as to have a substantially uniform thickness t1 is shown, but the present invention is not limited to this. For example, as in the second modification of the first embodiment of the present invention shown in FIG. 20, the thick plate corresponding to the upper surface 3 a of the base 3 on which the LED element 2 is arranged in the lead frame 501 of the LED module 500. You may make the thickness of the part 501c larger than the thickness of another area | region (thin board part 501d). By providing the thick plate portion 501c as described above, it is possible to effectively diffuse the heat in the vicinity of the LED element 2 throughout the lead frame 501. Note that the lead frame 501 in the thick plate portion 501c has a three-layer structure (see FIG. 3) of the outer Cu layer 11, the Fe layer 12, and the inner Cu layer 13. On the other hand, the lead frame 501 in the thin plate portion 501d may be made of the same material as that of the thick plate portion 501c and may have a three-layer structure of the outer Cu layer 11, the Fe layer 12, and the inner Cu layer 13. Further, the lead frame 501 in the thin plate portion 501d may be only the inner Cu layer 13 or may have a two-layer structure of the Fe layer 12 and the inner Cu layer 13. The LED module 500 is an example of the “light emitting module” in the present invention, and the lead frame 501 is an example of the “light emitting element substrate” in the present invention.
　また、上記第１実施形態では、外側Ｃｕ層１１および内側Ｃｕ層１３が純度９９．９％以上のＣｕからなる例を示したが、外側Ｃｕ層１１および内側Ｃｕ層１３を、Ｃｕ－２．３０Ｆｅ－０．１０Ｚｎ―０．０３ＰからなるＣ１９４００（ＣＤＡ規格）や、Ｃｕ－０．１Ｆｅ－０．０３Ｐ、Ｃｕ-０．２Ｚｒなどの、Ｃｕの純度が９９．９％以下のＣｕ合金からなるように構成してもよい。これにより、リードフレームに対するプレス加工などの加工が容易になるとともに、リードフレームの高温条件下における機械的強度をより向上させることが可能である。 In the first embodiment, the outer Cu layer 11 and the inner Cu layer 13 are made of Cu having a purity of 99.9% or more. However, the outer Cu layer 11 and the inner Cu layer 13 are made of Cu-2. C19400 (CDA standard) made of 30Fe-0.10Zn-0.03P, Cu-0.1Fe-0.03P, Cu-0.2Zr, and other Cu alloys having a Cu purity of 99.9% or less You may comprise as follows. This facilitates processing such as press processing on the lead frame, and further improves the mechanical strength of the lead frame under high temperature conditions.
　また、上記第２実施形態では、外層３１１および内層３１３がＡｇまたはＡｌからなる例を示したが、外層３１１および内層３１３がＡｇとＡｇ以外の元素とを含むＡｇ合金、または、ＡｌとＡｌ以外の元素とを含むＡｌ合金からなるように構成してもよい。これにより、リードフレームに対するプレス加工などの加工が容易になるとともに、リードフレームの高温条件下における機械的強度をより向上させることが可能である。 In the second embodiment, the outer layer 311 and the inner layer 313 are made of Ag or Al. However, the outer layer 311 and the inner layer 313 are Ag alloys containing elements other than Ag and Ag, or other than Al and Al. You may comprise so that it may consist of Al alloy containing these elements. This facilitates processing such as press processing on the lead frame, and further improves the mechanical strength of the lead frame under high temperature conditions.
　また、上記第１実施形態では、外側Ｃｕ層１１（第１層）および内側Ｃｕ層１３（第３層）が共にＣｕからなる例を示し、上記第２実施形態では、外側層３１１（第１層）および内側層３１３（第３層）が共にＡｇまたはＡｌからなる例を示したが、本発明はこれに限られない。本発明では、第１層および第３層の組み合わせとして、それぞれ、ＣｕおよびＡｇ、ＣｕおよびＡｌ、ＡｇおよびＣｕ、ＡｇおよびＡｌ、ＡｌおよびＣｕ、ＡｌおよびＡｇであってもよい。また、上記の組み合わせにおいて、ＣｕはＣｕ合金でもよいし、ＡｇはＡｇ合金でもよいし、ＡｌはＡｌ合金でもよい。 In the first embodiment, the outer Cu layer 11 (first layer) and the inner Cu layer 13 (third layer) are both made of Cu. In the second embodiment, the outer layer 311 (first layer) is shown. Although the example in which both the layer) and the inner layer 313 (third layer) are made of Ag or Al is shown, the present invention is not limited to this. In the present invention, the combination of the first layer and the third layer may be Cu and Ag, Cu and Al, Ag and Cu, Ag and Al, Al and Cu, Al and Ag, respectively. In the above combination, Cu may be a Cu alloy, Ag may be an Ag alloy, and Al may be an Al alloy.
　また、上記第１実施形態では、約２００℃以上約４００℃以下の高温条件下において、Ｆｅ層１２の０．２％耐力を、約４００ＭＰａ以上であるように構成した例を示したが、本発明はこれに限られない。本発明では、約２００℃以上約４００℃以下の高温条件下において、Ｆｅ層１２の０．２％耐力は、約２５０ＭＰａ以上であればよい。なお、約２００℃以上約４００℃以下の高温条件下において、Ｆｅ層１２の０．２％耐力は、約４００ＭＰａ以上であるのが好ましい。 In the first embodiment, an example in which the 0.2% proof stress of the Fe layer 12 is about 400 MPa or more under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less is shown. The invention is not limited to this. In the present invention, the 0.2% yield strength of the Fe layer 12 may be about 250 MPa or more under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less. Note that the 0.2% proof stress of the Fe layer 12 is preferably about 400 MPa or more under a high temperature condition of about 200 ° C. or more and about 400 ° C. or less.
　また、上記第１実施形態では、リードフレーム１の外側Ｃｕ層１１側の一方表面１ａが、全面に渡って、クルトシス（Ｒｋｕ）が１０．５以下になるとともに、算術平均粗さ（Ｒａ）が０．１５μｍ以下になるように形成した例を示したが、本発明はこれに限られない。本発明では、リードフレーム１の一方表面１ａのうち、少なくとも光反射層１４が形成されている領域のみクルトシスが１０．５以下になるとともに、算術平均粗さが０．１５μｍ以下になるように形成してもよい。 Further, in the first embodiment, the one surface 1a on the outer Cu layer 11 side of the lead frame 1 has a kurtosis (Rku) of 10.5 or less over the entire surface, and an arithmetic average roughness (Ra). Although the example formed so that it may become 0.15 micrometer or less was shown, this invention is not limited to this. In the present invention, at least the region where the light reflecting layer 14 is formed on one surface 1a of the lead frame 1 is formed so that the kurtosis is 10.5 or less and the arithmetic average roughness is 0.15 μm or less. May be.
　また、上記第１実施形態では、Ａｇメッキ層からなる光反射層１４を、Ａｇを含むメッキ液に接触させることによって形成した例を示したが、本発明はこれに限られない。本発明では、リードフレーム１の一方表面１ａ上にＡｇペーストを塗布することによって、光反射層１４を形成してもよい。このように一方表面１ａ上にＡｇペーストを塗布するような場合であっても、一方表面１ａは、クルトシスが１０．５以下で、かつ、算術平均粗さが０．１５μｍ以下であることによって、一方表面１ａにおいて尖っている部分が少なく、かつ、起伏が小さいので、一方表面１ａ上に欠陥のない良質な光反射層１４を形成することが可能である。また、光反射層１４を、Ａｌメッキ層などのＡｇ以外の金属材料のメッキ層からなるように構成してもよい。 In the first embodiment, the example in which the light reflecting layer 14 made of the Ag plating layer is formed by contacting with the plating solution containing Ag is shown, but the present invention is not limited to this. In the present invention, the light reflecting layer 14 may be formed by applying an Ag paste on the one surface 1 a of the lead frame 1. Thus, even when Ag paste is applied on the one surface 1a, the one surface 1a has a kurtosis of 10.5 or less and an arithmetic average roughness of 0.15 μm or less. On the other hand, there are few sharp points on the surface 1a and the undulations are small, so that it is possible to form a high-quality light reflecting layer 14 having no defects on the surface 1a. Further, the light reflecting layer 14 may be constituted by a plated layer of a metal material other than Ag such as an Al plated layer.
　また、上記第１および第２実施形態では、基台３およびリフレクタ６がアルミナ（Ａｌ２Ｏ３）からなる例を示したが、本発明はこれに限られない。たとえば、基台３およびリフレクタ６が窒化アルミ（ＡｌＮ）からなるように構成してもよい。 In the first and second embodiments, the base 3 and the reflector 6 is an example made of alumina (Al 2 O 3), the present invention is not limited thereto. For example, you may comprise so that the base 3 and the reflector 6 may consist of aluminum nitride (AlN).
　また、上記第１および第２実施形態では、ＬＥＤ素子２を有するＬＥＤモジュール１００（３００）にリードフレーム１（３０１）を用いた例について示したが、本発明はこれに限られない。たとえば、レーザ光を出射するレーザ素子モジュールにリードフレーム１（３０１）を用いてもよい。 In the first and second embodiments, the example in which the lead frame 1 (301) is used in the LED module 100 (300) having the LED element 2 has been described. However, the present invention is not limited to this. For example, the lead frame 1 (301) may be used for a laser element module that emits laser light.
　１、３０１、４０１、５０１　リードフレーム（発光素子用基板）
　１ａ、３０１ａ　一方表面
　１ｂ、３０１ｂ　他方表面
　２　ＬＥＤ素子（発光素子）
　３　基台
　３ａ　上面（基台の表面）
　３ｂ　側面（基台の表面）
　３ｃ　下面（基台の表面）
　１１　外側Ｃｕ層（第１層）
　１２　Ｆｅ層（第２層）
　１３　内側Ｃｕ層（第３層）
　１４　光反射層（メッキ層）
　１００、３００、４００、５００　ＬＥＤモジュール（発光モジュール）
　３１１　外側層（第１層）
　３１３　内側層（第３層） 1, 301, 401, 501 Lead frame (light emitting element substrate)
1a, 301a One surface 1b, 301b The other surface 2 LED element (light emitting element)
3 base 3a top surface (surface of base)
3b Side (base surface)
3c Bottom surface (base surface)
11 Outer Cu layer (first layer)
12 Fe layer (second layer)
13 Inner Cu layer (third layer)
14 Light reflection layer (plating layer)
100, 300, 400, 500 LED module (light emitting module)
311 Outer layer (first layer)
313 Inner layer (third layer)

Claims (12)

  1. 　発光素子（２）が配置される一方表面（１ａ）に配置され、Ｃｕ、Ａｇ、Ａｌ、Ｃｕ合金、Ａｇ合金またはＡｌ合金のいずれか１つからなる第１層（１１）と、
    　ＦｅまたはＦｅ合金からなる第２層（１２）と、
    　前記第１層との間に前記第２層を挟み込むとともに、他方表面（１ｂ）に配置され、Ｃｕ、Ａｇ、Ａｌ、Ｃｕ合金、Ａｇ合金またはＡｌ合金のいずれか１つからなる第３層（１３）とを備え、
    　前記一方表面は、表面粗さを示す指標としてのクルトシス（Ｒｋｕ）が１０．５以下になるとともに、表面粗さを示す指標としての算術平均粗さ（Ｒａ）が０．１５μｍ以下になるように形成されている、発光素子用基板（１）。     A first layer (11) disposed on one surface (1a) on which the light emitting element (2) is disposed and made of any one of Cu, Ag, Al, Cu alloy, Ag alloy or Al alloy;
    A second layer (12) made of Fe or Fe alloy;
    The second layer is sandwiched between the first layer and the third layer which is disposed on the other surface (1b) and made of any one of Cu, Ag, Al, Cu alloy, Ag alloy or Al alloy ( 13)
    The one surface has a kurtosis (Rku) as an index indicating the surface roughness of 10.5 or less and an arithmetic average roughness (Ra) as an index of the surface roughness of 0.15 μm or less. The formed light emitting element substrate (1).
  2. 　前記第３層は、前記第１層と同一の金属材料で構成している、請求項１に記載の発光素子用基板。 The light emitting element substrate according to claim 1, wherein the third layer is made of the same metal material as the first layer.
  3. 　２００℃以上４００℃以下の温度条件下において、前記第２層の０．２％耐力は、２５０ＭＰａ以上であるように構成されている、請求項１に記載の発光素子用基板。 The light emitting element substrate according to claim 1, wherein the second layer has a 0.2% yield strength of 250 MPa or more under a temperature condition of 200 ° C or more and 400 ° C or less.
  4. 　前記第１層は、ＣｕまたはＣｕ合金からなり、
    　前記一方表面上には、前記発光素子からの光を反射可能な光反射層を構成するメッキ層（１４）が形成されている、請求項１に記載の発光素子用基板。     The first layer is made of Cu or Cu alloy,
    The light emitting element substrate according to claim 1, wherein a plating layer (14) constituting a light reflecting layer capable of reflecting light from the light emitting element is formed on the one surface.
  5. 　前記第３層は、前記第１層と同一の金属材料からなり、
    　前記第１層と前記第３層とは、同一の厚みを有する、請求項１に記載の発光素子用基板。     The third layer is made of the same metal material as the first layer,
    The light emitting element substrate according to claim 1, wherein the first layer and the third layer have the same thickness.
  6. 　前記第１層、前記第２層および前記第３層によって板状の基板本体が構成されており、
    　前記板状の基板本体は、板面方向の熱伝導率が１５０Ｗ／（ｍ×Ｋ）以上になるとともに、板厚方向の熱伝導率が１００Ｗ／（ｍ×Ｋ）以上になるように構成されている、請求項１に記載の発光素子用基板。     A plate-shaped substrate body is constituted by the first layer, the second layer, and the third layer,
    The plate-shaped substrate body has a thermal conductivity in the plate surface direction of 150 W / (m × K) or higher and a thermal conductivity in the plate thickness direction of 100 W / (m × K) or higher. The substrate for a light-emitting element according to claim 1.
  7. 　前記第１層、前記第２層および前記第３層によって板状の基板本体が構成されており、
    　前記板状の基板本体は、線膨張係数が１７×１０－６／Ｋ以下になるように構成されている、請求項１に記載の発光素子用基板。     A plate-shaped substrate body is constituted by the first layer, the second layer, and the third layer,
    2. The light emitting element substrate according to claim 1, wherein the plate-like substrate body is configured to have a linear expansion coefficient of 17 × 10 −6 / K or less.
  8. 　前記第１層および前記第３層は、共にＣｕからなり、
    　前記第２層は、Ｆｅからなる、請求項１に記載の発光素子用基板。     The first layer and the third layer are both made of Cu,
    The light emitting element substrate according to claim 1, wherein the second layer is made of Fe.
  9. 　前記第２層は、Ｆｅ合金からなり、
    　前記第２層を構成するＦｅ合金は、ＮｉおよびＣｒの少なくともいずれか一方を含有するとともに、ＮｉとＣｒとの合計が１０質量％以下であるＦｅ合金からなる、請求項１に記載の発光素子用基板。     The second layer is made of an Fe alloy,
    2. The light emitting device according to claim 1, wherein the Fe alloy constituting the second layer is made of an Fe alloy containing at least one of Ni and Cr and a total of Ni and Cr of 10% by mass or less. Substrate.
  10. 　前記第１層、前記第２層および前記第３層によって板状の基板本体が構成されており、
    　前記板状の基板本体は、前記他方表面側から前記板状の基板本体を支持する板状の基台の表面を覆うように折り曲げられている、請求項１に記載の発光素子用基板。     A plate-shaped substrate body is constituted by the first layer, the second layer, and the third layer,
    The light emitting element substrate according to claim 1, wherein the plate-like substrate body is bent so as to cover a surface of a plate-like base supporting the plate-like substrate body from the other surface side.
  11. 　発光素子（２）と、
    　前記発光素子が配置される一方表面（１ａ）に配置され、Ｃｕ、Ａｇ、Ａｌ、Ｃｕ合金、Ａｇ合金またはＡｌ合金のいずれか１つからなる第１層（１１）と、ＦｅまたはＦｅ合金からなる第２層（１２）と、前記第１層との間に前記第２層を挟み込むとともに、他方表面（１ｂ）に配置され、Ｃｕ、Ａｇ、Ａｌ、Ｃｕ合金、Ａｇ合金またはＡｌ合金のいずれか１つからなる第３層（１３）とを含む発光素子用基板（１）とを備え、
    　前記発光素子用基板の前記一方表面は、表面粗さを示す指標としてのクルトシス（Ｒｋｕ）が１０．５以下になるとともに、表面粗さを示す指標としての算術平均粗さ（Ｒａ）が０．１５μｍ以下になるように形成されている、発光モジュール（１００）。     A light emitting element (2);
    A first layer (11) disposed on one surface (1a) on which the light emitting element is disposed, and made of any one of Cu, Ag, Al, Cu alloy, Ag alloy or Al alloy; and Fe or Fe alloy The second layer is sandwiched between the second layer (12) and the first layer, and disposed on the other surface (1b), and any of Cu, Ag, Al, Cu alloy, Ag alloy, or Al alloy A light emitting element substrate (1) including a third layer (13) composed of one of the above,
    The one surface of the substrate for a light emitting element has a kurtosis (Rku) as an index indicating the surface roughness of 10.5 or less and an arithmetic average roughness (Ra) as an index indicating the surface roughness of 0. A light emitting module (100) formed to be 15 μm or less.
  12. 　発光素子（２）が配置される一方表面（１ａ）に配置され、Ｃｕ、Ａｇ、Ａｌ、Ｃｕ合金、Ａｇ合金またはＡｌ合金のいずれか１つからなる第１層（１１）と、ＦｅまたはＦｅ合金からなる第２層（１２）と、前記第１層との間に前記第２層を挟み込むとともに、他方表面（１ｂ）に配置され、Ｃｕ、Ａｇ、Ａｌ、Ｃｕ合金、Ａｇ合金またはＡｌ合金のいずれか１つからなる第３層（１３）とを含み、前記一方表面が、表面粗さを示す指標としてのクルトシス（Ｒｋｕ）が１０．５以下になるとともに、表面粗さを示す指標としての算術平均粗さ（Ｒａ）が０．１５μｍ以下になるように形成された発光素子用基板（１）を形成する工程と、
    　２００℃以上４００℃以下の温度条件下で熱処理を行う工程と、
    　前記発光素子用基板の前記一方表面上に前記発光素子を配置する工程とを備える、発光モジュール（１００）の製造方法。     A first layer (11) arranged on one surface (1a) on which the light emitting element (2) is arranged and made of any one of Cu, Ag, Al, Cu alloy, Ag alloy or Al alloy, and Fe or Fe Cu, Ag, Al, Cu alloy, Ag alloy or Al alloy is disposed on the other surface (1b) while sandwiching the second layer between the second layer (12) made of an alloy and the first layer. A third layer (13) made of any one of the above, and the one surface has an kurtosis (Rku) as an index indicating the surface roughness of 10.5 or less and an index indicating the surface roughness A step of forming a light emitting element substrate (1) formed so that the arithmetic average roughness (Ra) is 0.15 μm or less;
    Performing a heat treatment under a temperature condition of 200 ° C. or higher and 400 ° C. or lower;
    A step of disposing the light emitting element on the one surface of the light emitting element substrate.
PCT/JP2012/079118 2011-11-11 2012-11-09 Substrate for light emitting elements, light emitting module, and method for manufacturing light emitting module WO2013069767A1 (en)

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