WO2013061183A1 - Molded electrically insulating housing for semiconductor components or assemblies and production method - Google Patents
Molded electrically insulating housing for semiconductor components or assemblies and production method Download PDFInfo
- Publication number
- WO2013061183A1 WO2013061183A1 PCT/IB2012/055168 IB2012055168W WO2013061183A1 WO 2013061183 A1 WO2013061183 A1 WO 2013061183A1 IB 2012055168 W IB2012055168 W IB 2012055168W WO 2013061183 A1 WO2013061183 A1 WO 2013061183A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- materials
- layer
- tool
- circuit carrier
- transfer molding
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 230000000712 assembly Effects 0.000 title description 3
- 238000000429 assembly Methods 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 73
- 239000000463 material Substances 0.000 claims abstract description 60
- 238000001721 transfer moulding Methods 0.000 claims abstract description 23
- 238000007650 screen-printing Methods 0.000 claims abstract description 15
- 238000003825 pressing Methods 0.000 claims abstract description 7
- 235000011837 pasties Nutrition 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 125000006850 spacer group Chemical group 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- 230000000087 stabilizing effect Effects 0.000 claims 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims 1
- 239000011230 binding agent Substances 0.000 abstract description 7
- 239000008187 granular material Substances 0.000 abstract 1
- 238000000465 moulding Methods 0.000 description 23
- 150000001875 compounds Chemical class 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229920001169 thermoplastic Polymers 0.000 description 4
- 239000004416 thermosoftening plastic Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229940125782 compound 2 Drugs 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000009745 resin transfer moulding Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 241001133287 Artocarpus hirsutus Species 0.000 description 1
- 229920001342 Bakelite® Polymers 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 101001012040 Pseudomonas aeruginosa (strain ATCC 15692 / DSM 22644 / CIP 104116 / JCM 14847 / LMG 12228 / 1C / PRS 101 / PAO1) Immunomodulating metalloprotease Proteins 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000011852 carbon nanoparticle Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
Definitions
- the invention relates to a method according to claim 10 and an assembly according to claim 1 is claimed (thermoactive assembly), as a product by process claim.
- IPMs Integrated Power Modules
- the principle is applicable and advantageous for all requirements in which electrical insulation as well as good heat conduction are required.
- Transfermolding also called RTM (Resin Transfer Molding)
- RTM Resin Transfer Molding
- a tool chamber is filled from a reservoir with initially solid or liquid molding compound under pressure and heat via injection channels as a liquid mass.
- the molding compound is cured with heat.
- the transfermolding is known and includes many
- Chip size package housing for miniaturized semiconductors Today, both small and large semiconductors are manufactured in RTM housings, also referred to as plastic housings. While thermoplastic housings have become increasingly popular in many other applications, the RTM process has remained the state of the art in the semiconductor industry.
- thermoplastic spraying The advantage of transfer molding compared to thermoplastic spraying is the low viscosity of the molding compositions during injection compared with non-reactive thermoplastic spraying processes. In contrast, so far with significantly higher
- the molding compositions consist of a thermosetting reactive curing material which z. B. epoxy.
- silicone or compound materials are also used as molding compounds, especially in LEDs. The material is often filled to the
- thermosets have very good insulation properties, but only very limited thermal conductivities. Typical for optimized materials are thermal conductivities of 2W / mK achieved. Comparing this with aluminum and copper, the difference is immediately noticeable (thermal conductivity of copper is about 300W / mK).
- insulators also have good thermal conductivities. Examples are aluminum oxide, aluminum nitride and especially diamond (2300W / mK). The very good properties have also stimulated many researches in the field of carbon nanoparticles.
- the degree of filling of such masses can be increased to> 90% and the resin content (binder) are kept low.
- Transfermoldings are the very good flow properties of the potting compounds, which is why electronic components can not yet be wrapped thermoplastic.
- the rheology in the transfermolding achieves flow properties of the molding compounds which are in part better (lighter) than water. This ensures that the thin bonding wires are not torn and deformed when injecting the molding compound into the tool contained in the assembly and the circuit board (leadframe) do not bend much.
- thermally highly conductive materials with a very high degree of filling of the conductive particles and the relatively large particle size of up to 300 ⁇ only with very poor flow properties (ie pasty or as a powder with a powdery in the initial state proportion of binder) can be produced. These materials can not be injected after heating and liquefaction like the usual materials.
- the entire circuit carrier is often placed on an insulating and thermally highly conductive material. This substrate can then be in
- the thermally conductive insulating material is z. B. as DCB (direct copper bonding) method by applying
- Copper interconnects made on ceramic materials (eg, alumina). there the electrical conductor is connected in a thermal process with a thermally highly conductive ceramic in a sintering process, see. Michael Pecht, Handbook of Electronic Package Design, CRC Press, 1991. That is, the circuit carrier is no longer shrouded but the insulating side forms the outside of the housing.
- ceramic materials eg, alumina
- Substrates disseminated from the printed circuit board technology. These are created on a metal core by casting and screen printing technique with a highly filled mass. In both
- IPM modules are manufactured by various manufacturers, and represent the known prior art.
- the object of the claimed invention (s) is to reduce the number of process steps and to reduce the required use of materials.
- Circuit carrier in a transfer molding process the process is extended so that a similar result is achieved cheaper and more reliable process (claim 1, 10).
- the circuit carrier with the at least one component is preferably one
- metallic leadframe (claim 8), as it is used today in almost all IC packages.
- the leadframe has - since made of metal - a high thermal conductivity and is placed directly on the formed by screen printing or press-fitting first layer and adhesively bonded to this in the molding process.
- the joint curing in a molding process under pressure and heat results in particularly good thermal conduction properties, which are in no way inferior to those of previously used techniques with injected ceramic substrates or IMS substrates, but cheaper and cheaper can be produced more reliable.
- the second material forming the top layer may be transparent (claim 7, claim 17).
- Possible materials for the first material are aluminum oxide powder or Keramit, AINi or diamonds.
- the second material can come from the known transfer molding, z.
- FIG. 1 shows an opening of a tool with upper tool half 5
- thermally conductive compound 1 in viscous or viscous powder form by screen printing or dispensing and pressing shows the case of the screen printing method; Doctor blade 8 with a movement 8a in the arrow direction distributes the pasty or powdery material 1 with binder in the cavity 4a of the lower mold half 4 with a defined
- Layer thickness d (outlined here in the screen printing process), where it forms a layer la with a defined layer thickness d by the screen printing process.
- Figure 2a illustrates Fig. 2 from above with the doctor blade 8 in his
- FIG. 3 shows the insertion of an assembly on a circuit carrier 6 (eg as
- Figure 4 is a closing of the tool and injecting a low viscosity
- Figure 5 is an opening of the tool 4,5 for removing the cured
- Figures 6 illustrate the flow of Figure 2 in an upstream
- FIGS. 7 illustrate the process with a stamp 13.
- FIG. 8 illustrates an additional functional part 12.
- the additional process step according to FIG. 2 allows thermally highly conductive masses, which preferably have the same chemical base for the reactive curing adhesive (resin) but can not be injected, with the proven method of FIG.
- Another advantage is the easily controllable layer thickness d of the thermally conductive material 1 as layer la.
- very low defined layer thicknesses 'd' can be achieved by screen printing or the defined dispensing and pressing.
- the mass 1 in the introduced state la forms a buffer against the flow forces of the molding compound 2 and stabilizes the assembly against bending.
- layer thicknesses of 0.1mm to 0.3mm or up to 500 ⁇ can be achieved to ensure sufficient electrical insulation.
- controllable layer thickness d is possible.
- process step 2 filling the lower cavity 4a of the tool 4 with thermally conductive compound
- a "preform” eg of PTFE
- circuit carrier lead frame with soldered semiconductors
- the process is very advantageous in industrialization, since the molding machines are either additionally equipped with a small screen printing device (doctor blade 8 and a mask as in SMD soldering process), cf. Fig. 2, or the process step in an upstream machine in a z. B. deep-drawn shape can be done, see. Fig. 6.
- a small screen printing device doctor blade 8 and a mask as in SMD soldering process
- cf. Fig. 2 or the process step in an upstream machine in a z. B. deep-drawn shape can be done, see. Fig. 6.
- the good thermally conductive and highly viscous mass 1 is introduced by screen printing in a recessed sheet 10 in a tool 4 as a layer la.
- the mold is cured under pressure and heat in one process step.
- the film carrier 10 also serves as a release agent to almost completely avoid tool wear. After hardening of the layers 2a, la, the leadframes are then punched out and the carrier foil 10 is peeled off.
- the parting plane T of the mold 4.5 is shown, also with respect to the
- Auxiliary level 10 ' The film 10 is inserted into the cavity 4a of the lower mold half 4 as a "recessed film". On the recessed in the cavity 4a film 10 is the first
- Dispens and a mold (punch) are installed, which introduces the thermally conductive mass 1 in the tool-half 4.
- the thermally conductive powder or the paste 1 is first pressed with a resin as a binder in a filled out by a film 10 form with the sketched on the left in Fig. 7 pressing tool 13.
- the circuit carrier 6 is placed and both introduced together into the mold 4.5 and cured together under injection of the low-viscosity mass 2 under pressure and heat.
- the pre ssvon (according to FIG. 7) is used, as well as viscous pasty masses with a liquid binder and powdery masses can be used.
- the advantage of powdery materials is the high
- the illustrated leadframe 6 as a circuit carrier can also be continuous or extend in size and extent beyond the dimension of the lower layer 1a.
- the outer edge is then die-cut during the molding process or thereafter.
- Components 7, 7 a which are applied to the one or more part carrier 6, are fastened to the circuit carrier by soldering or gluing.
- One option is chip-on-chip mounting where the controls are mounted on the power semiconductor.
- Part of the implementation examples is the introduction of one or more poorly flowing - so pasty or powdery - materials using a different method than in the molding process (RTM) is used.
- RTM molding process
- the injection of the mass 2 takes place in a liquid, low-viscous state.
- Advantageous methods for introducing the first mass 1 are screen printing and pressing. This results in a hybrid process with two different methods for
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112012004032.5T DE112012004032A5 (en) | 2011-09-27 | 2012-09-27 | Electrically insulating resin housing for semiconductor devices or assemblies and manufacturing processes using a molding process |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011053997.2 | 2011-09-27 | ||
DE102011053997 | 2011-09-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013061183A1 true WO2013061183A1 (en) | 2013-05-02 |
Family
ID=47148873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2012/055168 WO2013061183A1 (en) | 2011-09-27 | 2012-09-27 | Molded electrically insulating housing for semiconductor components or assemblies and production method |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE112012004032A5 (en) |
WO (1) | WO2013061183A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014111930A1 (en) | 2014-08-20 | 2016-02-25 | Rupprecht Gabriel | Thermally highly conductive, electrically insulating housing with electronic components and manufacturing processes |
CN105990297A (en) * | 2015-01-28 | 2016-10-05 | 苏州普福斯信息科技有限公司 | Structure of using incoordinate die cavity to cooperate non-sinking wire frame |
CN107768362A (en) * | 2013-03-28 | 2018-03-06 | 东芝北斗电子株式会社 | Light-emitting device and its manufacture method |
CN113113315A (en) * | 2020-01-13 | 2021-07-13 | 珠海零边界集成电路有限公司 | Method for preventing glue overflow of intelligent power module |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3825643A (en) * | 1970-05-20 | 1974-07-23 | Dowty Seals Ltd | Production of shaped articles |
JPS58138039A (en) * | 1982-02-10 | 1983-08-16 | Nec Home Electronics Ltd | Manufacture of resin sealed type semiconductor device |
DE10024415A1 (en) * | 2000-05-19 | 2001-11-22 | Erich Schuermann | Equipment filling pressing molds with flowing solids for manufacturing plastic panels, comprises distributor based on moving perforated plates and wiper |
DE10213296A1 (en) * | 2002-03-25 | 2003-10-23 | Infineon Technologies Ag | Electronic component comprises a semiconductor chip arranged on a substrate made from plastic and embedded in a plastic housing |
US20040089928A1 (en) * | 2002-11-11 | 2004-05-13 | Mitsubishi Denki Kabushiki Kaisha | Mold resin-sealed power semiconductor device having insulating resin layer fixed on bottom surface of heat sink and metal layer on the resin layer |
JP2007165426A (en) | 2005-12-12 | 2007-06-28 | Mitsubishi Electric Corp | Semiconductor device |
JP2010067851A (en) * | 2008-09-11 | 2010-03-25 | Sanyo Electric Co Ltd | Method of manufacturing circuit device |
US20100197830A1 (en) * | 2007-07-19 | 2010-08-05 | Sekisui Chemical Co., Ltd. | Adhesive for electronic component |
US20100226095A1 (en) * | 2007-09-26 | 2010-09-09 | Mitsubishi Electric Corporation | Heat conductive sheet and power module |
-
2012
- 2012-09-27 DE DE112012004032.5T patent/DE112012004032A5/en not_active Withdrawn
- 2012-09-27 WO PCT/IB2012/055168 patent/WO2013061183A1/en active Application Filing
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3825643A (en) * | 1970-05-20 | 1974-07-23 | Dowty Seals Ltd | Production of shaped articles |
JPS58138039A (en) * | 1982-02-10 | 1983-08-16 | Nec Home Electronics Ltd | Manufacture of resin sealed type semiconductor device |
DE10024415A1 (en) * | 2000-05-19 | 2001-11-22 | Erich Schuermann | Equipment filling pressing molds with flowing solids for manufacturing plastic panels, comprises distributor based on moving perforated plates and wiper |
DE10213296A1 (en) * | 2002-03-25 | 2003-10-23 | Infineon Technologies Ag | Electronic component comprises a semiconductor chip arranged on a substrate made from plastic and embedded in a plastic housing |
US20040089928A1 (en) * | 2002-11-11 | 2004-05-13 | Mitsubishi Denki Kabushiki Kaisha | Mold resin-sealed power semiconductor device having insulating resin layer fixed on bottom surface of heat sink and metal layer on the resin layer |
JP2007165426A (en) | 2005-12-12 | 2007-06-28 | Mitsubishi Electric Corp | Semiconductor device |
US20100197830A1 (en) * | 2007-07-19 | 2010-08-05 | Sekisui Chemical Co., Ltd. | Adhesive for electronic component |
US20100226095A1 (en) * | 2007-09-26 | 2010-09-09 | Mitsubishi Electric Corporation | Heat conductive sheet and power module |
JP2010067851A (en) * | 2008-09-11 | 2010-03-25 | Sanyo Electric Co Ltd | Method of manufacturing circuit device |
Non-Patent Citations (1)
Title |
---|
MICHAEL PECHT: "Handbook of Electronic Package Design", 1991, CRC PRESS |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107768362A (en) * | 2013-03-28 | 2018-03-06 | 东芝北斗电子株式会社 | Light-emitting device and its manufacture method |
CN107768362B (en) * | 2013-03-28 | 2020-09-08 | 东芝北斗电子株式会社 | Light emitting device and method for manufacturing the same |
DE102014111930A1 (en) | 2014-08-20 | 2016-02-25 | Rupprecht Gabriel | Thermally highly conductive, electrically insulating housing with electronic components and manufacturing processes |
CN105990297A (en) * | 2015-01-28 | 2016-10-05 | 苏州普福斯信息科技有限公司 | Structure of using incoordinate die cavity to cooperate non-sinking wire frame |
CN113113315A (en) * | 2020-01-13 | 2021-07-13 | 珠海零边界集成电路有限公司 | Method for preventing glue overflow of intelligent power module |
Also Published As
Publication number | Publication date |
---|---|
DE112012004032A5 (en) | 2014-07-24 |
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