WO2013054802A1 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
WO2013054802A1
WO2013054802A1 PCT/JP2012/076166 JP2012076166W WO2013054802A1 WO 2013054802 A1 WO2013054802 A1 WO 2013054802A1 JP 2012076166 W JP2012076166 W JP 2012076166W WO 2013054802 A1 WO2013054802 A1 WO 2013054802A1
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Prior art keywords
plasma
substrate
insulating film
film
processing method
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PCT/JP2012/076166
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English (en)
French (fr)
Japanese (ja)
Inventor
西森　年彦
河野　雄一
嶋津　正
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三菱重工業株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning

Definitions

  • the present invention relates to a plasma processing method for forming an insulating film.
  • a protective insulating film such as a silicon oxide film or a silicon nitride film
  • impurities such as a natural oxide film or an etching residue adhere to the surface of the element, the gap between the element and the protective insulating film In such a case, sufficient adhesion cannot be obtained, and the protective insulating film may be peeled off, leading to device defects. Therefore, a pretreatment for removing a natural oxide film and impurities on the element surface is performed before the formation of the protective insulating film.
  • Patent Document 1 As the pretreatment described above, sputtering using an inert gas such as Ar is known, and impurities on the element surface can be removed by Ar sputtering (Patent Document 1). Further, by adding a gas containing hydrogen (such as H 2 and NH 3 ), the natural oxide film can be efficiently removed. Ar sputtering can be easily performed in a vacuum vessel of a plasma CVD apparatus for forming a protective insulating film as long as Ar gas can be supplied. Therefore, after pre-processing by Ar sputtering in one vacuum vessel, protection is performed as it is. An insulating film can be formed, and both can be performed in one vacuum vessel.
  • a gas containing hydrogen such as H 2 and NH 3
  • a metal film such as a wiring is formed on the element of the semiconductor device, and the protective insulating film described above is formed on the metal film.
  • MRAM Magnetic Random Access Memory
  • the above-described protective insulating film is formed on the metal film. Therefore, in the plasma CVD apparatus, pretreatment of Ar sputtering is performed on the metal film before forming the protective insulating film, and then the protective insulating film is formed. During this Ar sputtering, the metal film of the element material is sputtered to some extent together with the impurities on the element surface, and the sputtered metal adheres to the inner wall of the vacuum vessel.
  • the plasma CVD apparatus has an ICP (Inductively-Coupled-Plasma) type plasma generation mechanism, that is, from the antenna provided outside the vacuum vessel to the inside of the vacuum vessel through an incident window made of an insulating material.
  • ICP Inductively-Coupled-Plasma
  • the sputtered metal may adhere to the incident window and form a metal film. If a metal film is formed on the entrance window, eddy currents are generated in this metal film, and the power of high-frequency electromagnetic waves cannot be properly supplied to the plasma, making the plasma unstable or igniting and maintaining the plasma. I was unable to.
  • a protective insulating film to be formed is also deposited on the inner wall of the vacuum vessel including the incident window, and the attached protective insulating film is peeled off as it is and becomes a particle generation source. It is necessary to perform plasma cleaning and remove it.
  • the attached protective insulating film is removed using a cleaning F-based gas (for example, NF 3 ), but the metal film (or the metal film attached to the entrance window or the inner wall of the vacuum vessel is sputtered from the element and adhered.
  • the oxidized metal oxide film cannot be removed by the F-based gas, and there is a possibility that it becomes a generation source of particles.
  • a supply system of a Cl-based gas for example, CCl 4
  • the present invention has been made in view of the above problems, and an object thereof is to provide a plasma processing method capable of stably maintaining plasma.
  • a plasma processing method for solving the above-described problems is as follows.
  • a plasma processing method of forming an insulating film on a substrate by a plasma processing apparatus including a vacuum container that houses a substrate on which a metal film is formed, and an inductively coupled plasma generating mechanism having an electromagnetic wave incident window, An inert gas plasma is generated, and the surface of the substrate is sputtered by ions in the plasma, Depositing the insulating film on the sputtered substrate; Unloading the substrate from the vacuum vessel; An oxygen plasma is generated, and atoms attached to the inner wall of the incident window by sputtering are oxidized by the oxygen plasma.
  • a plasma processing method for solving the above-described problems is as follows.
  • a plasma processing method of forming an insulating film on a substrate by a plasma processing apparatus including a vacuum container that houses a substrate on which a metal film is formed, and an inductively coupled plasma generating mechanism having an electromagnetic wave incident window, An inert gas plasma is generated, and the surface of the substrate is sputtered by ions in the plasma, An oxygen plasma is generated, and atoms attached to the inner wall of the incident window by sputtering are oxidized by the oxygen plasma.
  • the insulating film is formed on the sputtered substrate.
  • a plasma processing method for solving the above problem is as follows.
  • the plasma processing method according to the first or second invention In advance, another insulating film of the same type as the insulating film is formed on the inner wall of the vacuum vessel and the incident window, and sputtered atoms are deposited on the other insulating film and oxidized by the oxygen plasma.
  • fluorine-containing gas plasma is generated and oxidized together with the other insulating film by the plasma. It is characterized by removing atoms.
  • a plasma processing method for solving the above problem is as follows.
  • a plasma processing method of forming an insulating film on a substrate by a plasma processing apparatus including a vacuum container that houses a substrate on which a metal film is formed, and an inductively coupled plasma generating mechanism having an electromagnetic wave incident window, An oxygen plasma is generated together with an inert gas plasma, the surface of the substrate is sputtered by ions in the plasma, and the sputtered atoms are oxidized by the oxygen plasma.
  • the insulating film is formed on the sputtered substrate.
  • a plasma processing method for solving the above problem is as follows.
  • the plasma processing method according to the fourth invention In advance, another insulating film of the same type as the insulating film is formed on the inner wall of the vacuum vessel and the incident window, and atoms sputtered and oxidized on the other insulating film are attached, When the accumulated film thickness of the insulating film formed on the substrate reaches a predetermined value, fluorine-containing gas plasma is generated and oxidized together with the other insulating film by the plasma. It is characterized by removing atoms.
  • the sputtered atoms are oxidized, so that the conductivity of the film attached to the inner wall of the incident window is lowered. Generation of eddy currents in the film can be prevented. As a result, the power of the electromagnetic wave incident from the incident window is appropriately supplied to the plasma, and the instability of the plasma can be eliminated.
  • another insulating film of the same type as the insulating film formed on the substrate is previously formed on the inner wall of the vacuum vessel (predeposition) and is oxidized together with the other insulating film. Since atoms are removed (plasma cleaning), continuous processing of film formation ⁇ plasma cleaning ⁇ film formation becomes possible.
  • FIG. 1 is a schematic configuration diagram illustrating a plasma processing apparatus that performs the plasma processing method of the present embodiment.
  • the plasma processing apparatus will be described with reference to FIG.
  • FIG. 1 shows a plasma CVD apparatus having an ICP (Inductively Coupled Plasma) type plasma generation mechanism as an example.
  • FIG. 1 shows a plasma CVD apparatus having an inductively coupled plasma generation mechanism having an incident window. Others may be used as long as they are present.
  • ICP Inductively Coupled Plasma
  • a plasma CVD apparatus 10 for carrying out the plasma processing method of the present embodiment includes a cylindrical container 12 that becomes a vacuum container 11 (film formation chamber) and a ceiling plate 13, and an upper portion of the cylindrical cylindrical container 12.
  • a disk-shaped ceiling plate 13 made of ceramics is disposed so as to close the opening.
  • the cylindrical container 12 is connected to a vacuum device 14 for making the inside in a vacuum state, and the inside of the vacuum container 11 can be maintained at a high degree of vacuum.
  • a high-frequency antenna 15 composed of a plurality of circular rings is disposed above (directly above) the ceiling plate 13, and a high-frequency power source 17 is connected to the high-frequency antenna 15 via a matching unit 16.
  • the high-frequency power source 17 can supply a high oscillation frequency (for example, 13.56 MHz) to the high-frequency antenna 15 than the low-frequency power source 27 described later, and transmits the plasma P through the ceiling plate 13 serving as an entrance window.
  • a high frequency electromagnetic wave (RF) for generation can be incident into the vacuum vessel 11. This is a configuration of a so-called ICP type plasma generation mechanism.
  • a plurality of gas nozzles 18 are provided on the side wall portion of the cylindrical container 12 at a position lower than the ceiling plate 13 and higher than the mounting table 22 described later, and a desired flow rate is provided from the gas nozzle 18 to the inside of the vacuum container 11.
  • the desired gas can be supplied.
  • the gas to be supplied is changed according to the process.
  • a protective insulating film for example, a silicon oxide film or a silicon nitride film
  • predeposition hereinafter abbreviated as predeposition
  • SiH as a source gas
  • 4 , N 2 , O 2, etc. are used, the sputtering process uses an inert gas, a rare gas such as Ar, and the plasma cleaning process uses NF 3 , which will be described later.
  • O 2 is used in the processing process.
  • a substrate support 21 for holding a substrate W that is a film formation target is installed under the cylindrical container 12.
  • the substrate support 21 includes a mounting table 22 that holds the substrate W and a support shaft 23 that supports the mounting table 22.
  • a heater (not shown) for heating is installed inside the mounting table 22, and the temperature of the heater is adjusted by a control device (not shown). As a result, the substrate W during the plasma processing can be controlled to a desired temperature (for example, 150 to 700 ° C.).
  • the mounting table 22 is provided with an electrode 24, and a low frequency power source 27 is connected to the electrode 24 via a capacitor 25 and a matching unit 26.
  • the low frequency power supply 27 can apply a lower oscillation frequency (for example, 4 MHz) than the high frequency power supply 17 to the electrode 24 and apply a bias power (LF power) to the substrate W.
  • a lower oscillation frequency for example, 4 MHz
  • LF power bias power
  • ions can be drawn into the surface of the substrate W from the plasma P.
  • Ar ions can be drawn into the surface of the substrate W, and natural oxide films, impurities, and the like can be efficiently removed.
  • a DC electrostatic power supply 28 that electrostatically attracts the substrate W is connected to the electrode 24 described above, and the substrate W can be attracted and held on the mounting table 22.
  • the electrostatic power source 28 is connected via a low-pass filter (LPF) 29 so that the power of the high-frequency power source 17 and the low-frequency power source 27 does not wrap around.
  • LPF low-pass filter
  • the substrate W can be transferred onto the mounting table 22 by using a gate door (not shown) provided on the side wall of the cylindrical container 12, and the substrate W is mounted on the mounting table 22.
  • the substrate W is accommodated in the vacuum container 11. Thereafter, the gate door is closed, and a plasma processing method to be described later is performed by a main controller (not shown).
  • pre-deposition of an insulating film is performed on the vacuum container 11 including the cylindrical container 12 and the ceiling plate 13 (step S1).
  • a film of the same type as the film formed on the substrate W in step S4 described later is desirable.
  • a protective insulating film such as a silicon oxide film or a silicon nitride film is formed on the substrate W
  • the same type of protective insulating film for example, a Si-based insulating film such as SiOx, SixNy, or Si is desirable as the predeposition.
  • the substrate W is carried into the vacuum vessel 11 and placed on the mounting table 22 (step S2).
  • the substrate W has already been formed with a metal film constituting a semiconductor element.
  • the surface of the substrate W is sputtered (step S3).
  • a sputtering gas an inert gas or a rare gas is used to generate plasma.
  • Impurities such as a natural oxide film and etching residue adhering to the surface of the substrate W are removed by the sputtering process.
  • the metal film is also sputtered, and the sputtered metal atoms adhere to the inner wall of the vacuum vessel 11, more precisely, the insulating film of the predepot.
  • the laminated metal film is oxidized by the oxygen plasma treatment described later.
  • step S4 a protective insulating film is formed on the substrate W (step S4).
  • step S3 since impurities and the like on the surface of the substrate W are removed by sputtering, a protective insulating film can be formed with good adhesion to the element surface of the substrate W.
  • step S5 the substrate W is unloaded from the vacuum vessel 11 (step S5). That is, it is assumed that there is no substrate W in the vacuum vessel 11.
  • oxygen plasma treatment is performed on the vacuum vessel 11 (step S6), and in step S3, metal atoms (or metal film) sputtered and deposited are oxidized.
  • the oxygen plasma treatment is performed every time after the formation of the single substrate W, so that the metal atoms (or metal film) attached to the ceiling plate 13 are oxidized and the conductivity is lowered. Thus, the generation of eddy current can be prevented.
  • step S8 plasma cleaning is performed on the vacuum container 11 (step S8).
  • plasma cleaning is performed using NF 3 .
  • LF power is not applied.
  • step S1 before the film formation process an insulating film is formed on the vacuum vessel 11 including the ceiling plate 13 by predeposition, and the metal atoms (or metal film) deposited by sputtering are insulated from the predepot. It is deposited on the film and oxidized.
  • the plasma cleaning is performed with an F-based gas such as NF 3 , the oxidized metal film can be removed together with the pre-deposition insulating film. Thereby, the vacuum vessel 11 including the ceiling board 13 can be returned to the initial state.
  • step S1 If the substrate W on which the protective insulating film is to be formed still remains, the process returns to step S1, and the above-described steps S1 to S8 may be repeated. If these are expressed as a time chart, the time chart shown in FIG. It becomes.
  • the integrated film thickness of 9000 nm is the same value as the integrated film thickness for plasma cleaning when Ar sputtering treatment is not required.
  • FIG. 4 is a flowchart for explaining the plasma processing method of this embodiment
  • FIG. 5 is a time chart thereof. Note that the flowchart of FIG. 4 and the time chart of FIG. 5 can also be implemented by the plasma CVD apparatus 10 shown in FIG. 1 and the like, so the description of the plasma CVD apparatus itself is omitted here, and the flowchart and FIG. The description will be made with reference to the time chart of FIG. In addition, since the process order is basically different from that of the first embodiment, the overlapping description is simplified.
  • step S11 Before carrying in the substrate W, pre-deposition of an Si-based insulating film (another insulating film) is performed on the vacuum vessel 11 (step S11).
  • the substrate W on which the metal film or the like constituting the semiconductor element is formed is carried into the vacuum vessel 11 and placed on the mounting table 22 (step S12).
  • step S13 in order to remove impurities such as a natural oxide film and etching residues adhering to the surface of the substrate W, LF power is applied and Ar sputtering is performed (step S13).
  • step S14 oxygen plasma treatment is performed on the vacuum vessel 11 (step S14), and in step S13, metal atoms (or metal film) deposited by sputtering are oxidized.
  • step S13 metal atoms (or metal film) deposited by sputtering are oxidized.
  • the metal atoms (or metal film) attached to the ceiling plate 13 are oxidized and the conductivity is lowered. Thereby, generation
  • a protective insulating film is formed on the substrate W (step S15).
  • step S16 the substrate W is unloaded from the vacuum vessel 11 (step S16).
  • step S17 it is confirmed whether or not the integrated film thickness of the protective insulating film formed in step S15 has reached a predetermined value (step S17). If the integrated film thickness has not reached the predetermined value, the process returns to step S12, and the integrated film If the thickness has reached the predetermined value, the process proceeds to step S18. That is, the above-described steps S12 to S16 are repeated until the integrated film thickness reaches a predetermined value.
  • plasma cleaning is performed on the vacuum vessel 11 using, for example, NF 3 without applying LF power (step S18).
  • the oxidized metal atoms or metal film
  • the vacuum vessel 11 including the ceiling plate 13 can be returned to the initial state.
  • step S11 If the substrate W on which the protective insulating film is to be formed still remains, the process returns to step S11, and the above-described steps S11 to S18 may be repeated. If these are expressed as a time chart, the time chart shown in FIG. It becomes.
  • FIG. 6 is a flowchart for explaining the plasma processing method of the present embodiment
  • FIG. 7 is a time chart thereof. Note that the flowchart of FIG. 6 and the time chart of FIG. 7 can also be implemented by the plasma CVD apparatus 10 shown in FIG. 1 and the like, so the description of the plasma CVD apparatus itself is omitted here, and the flowchart and FIG. Description will be made with reference to the time chart of FIG. In addition, since the first and second embodiments are basically different in some processes, overlapping descriptions are simplified.
  • step S21 First, before carrying in the substrate W, pre-deposition of a Si-based insulating film (other insulating film) is performed on the vacuum vessel 11 (step S21).
  • the substrate W on which the metal film or the like constituting the semiconductor element is formed is carried into the vacuum container 11 and placed on the mounting table 22 (step S22).
  • Ar sputtering is performed by applying LF power, but oxygen plasma is supplied by supplying oxygen together with Ar. Processing is also performed simultaneously (step S23).
  • the metal film is sputtered together with the natural oxide film and the etching residue by Ar sputtering, but the sputtered metal atoms are oxidized by the oxygen plasma, and in the case of adhering to the ceiling plate 13, the metal oxide It will be attached as an atom.
  • the oxygen plasma treatment is performed simultaneously with the Ar sputtering every time before forming the single substrate W, so that the sputtered metal atoms are oxidized, and the oxidized metal atoms adhere to the ceiling plate 13. Even if the metal oxide film is formed, the electric conductivity is low, so that generation of eddy current can be prevented. Further, by oxidizing the sputtered metal atoms before the formation of the protective insulating film, even if it is mixed into the protective insulating film, the influence can be reduced. In addition, since oxygen plasma treatment is performed simultaneously with Ar sputtering, the overall process time can be shortened and throughput can be improved as compared with the first and second embodiments.
  • a protective insulating film is formed on the substrate W (step S24).
  • step S25 the substrate W is unloaded from the vacuum vessel 11 (step S25).
  • step S26 it is confirmed whether the integrated film thickness of the protective insulating film formed in step S24 has reached a predetermined value (step S26). If the integrated film thickness has not reached the predetermined value, the process returns to step S22, and the integrated film If the thickness has reached the predetermined value, the process proceeds to step S27. That is, the above-described steps S22 to S25 are repeated until the integrated film thickness reaches a predetermined value.
  • NF 3 is used for the vacuum vessel 11 and plasma cleaning is performed without applying LF power (step S27).
  • plasma cleaning the metal oxide film can be removed together with the predeposition insulating film, and the vacuum vessel 11 including the ceiling plate 13 can be returned to the initial state.
  • step S21 If the substrate W on which the protective insulating film is to be formed still remains, the process returns to step S21, and the above-described steps S21 to S27 may be repeated, and these are represented as a time chart. It becomes.
  • the present invention is suitable for forming a protective insulating film on a semiconductor element having a metal film.

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PCT/JP2012/076166 2011-10-14 2012-10-10 プラズマ処理方法 WO2013054802A1 (ja)

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JP2000200832A (ja) * 1999-01-04 2000-07-18 Internatl Business Mach Corp <Ibm> 銅相互接続構造の形成方法
JP2003037105A (ja) * 2001-07-26 2003-02-07 Tokyo Electron Ltd プラズマ処理装置及び方法
JP2003264172A (ja) * 2002-03-07 2003-09-19 New Japan Radio Co Ltd プラズマ処理装置
JP2011035048A (ja) * 2009-07-30 2011-02-17 Renesas Electronics Corp 半導体集積回路装置の製造方法

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