WO2013038023A1 - Source de vapeur pour le dépôt de couches minces - Google Patents

Source de vapeur pour le dépôt de couches minces Download PDF

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Publication number
WO2013038023A1
WO2013038023A1 PCT/EP2012/068280 EP2012068280W WO2013038023A1 WO 2013038023 A1 WO2013038023 A1 WO 2013038023A1 EP 2012068280 W EP2012068280 W EP 2012068280W WO 2013038023 A1 WO2013038023 A1 WO 2013038023A1
Authority
WO
WIPO (PCT)
Prior art keywords
precursor
cartridge
vapor
coating
hollow body
Prior art date
Application number
PCT/EP2012/068280
Other languages
German (de)
English (en)
Inventor
Karsten Reihs
Original Assignee
Amf Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amf Gmbh filed Critical Amf Gmbh
Publication of WO2013038023A1 publication Critical patent/WO2013038023A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D1/00—Containers having bodies formed in one piece, e.g. by casting metallic material, by moulding plastics, by blowing vitreous material, by throwing ceramic material, by moulding pulped fibrous material, by deep-drawing operations performed on sheet material
    • B65D1/09—Ampoules

Definitions

  • the invention relates to a device for supplying the vapor of a fluid and / or solid precursor into a coating chamber for depositing a coating with a closed precursor cartridge which is wholly or partially in a housing which has a connection to a coating chamber.
  • the cartridge is not reclosed open so that steam may enter the housing which is directed to the coating chamber.
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • MLD molecular layer deposition
  • an inert carrier gas is often passed through the liquid precursor.
  • the carrier gas saturated with the vapor is optionally diluted with a further stream of inert gas and then flows in the coating chamber over the substrate.
  • This classic bubbler as a vapor delivery device is described, for example, in L. Choy, Chemical Vapor Deposition of Coatings, in: Progress in Materials Science 48, No. 2, 57-170 (2003) US Patent Nos. 5,288,325 and 6,579,372 B2 all share the prior art with a larger amount of precursor being charged into a sealed vessel, and a valve introduces a stream of carrier gas into the vessel which is saturated with steam via at least one other valve flows into the coating chamber.
  • a device for metering a precursor which is described in US 2009/263578 A1.
  • the liquid or solid precursor is filled in a storage vessel and dosed at a suitable time during the coating process in the reaction chamber.
  • the storage vessel is constructed such that it can be reversibly connected to the coating system and removed again.
  • various embodiments of a mechanism are described, which establishes a connection to the steam of the precursor after the attachment of the storage vessel to the coating system. Before dismantling the storage vessel, this compound can be interrupted again, so that after the degradation no steam can escape from the storage vessel, or foreign substances can get to Recursor in the storage vessel.
  • the attachment and removal is reversible and can be repeated as often as desired.
  • the precursors are first filled as liquids or solids directly into a vessel in which the vapor is generated.
  • This vessel is either directly connected to the coating apparatus and is filled there or it is first filled at another location, optionally closed with valves and then connected to the coating apparatus. If necessary, the degassing is carried out after filling the precursor before the steam supply into the coating chamber.
  • a disadvantage of the known delivery techniques is that precursors, which are very often sensitive to moisture and / or air, have to be handled when filling with inert gas. This requires e.g. the handling in a glove box, which is filled with Intergas. Such a device must therefore be a corresponding part of the coating apparatus. Otherwise, the precursor must be filled in an external glove box into a container, which can be closed with valves before it is transported through the air and attached to the coating apparatus.
  • the said protective measures may possibly be omitted for cost reasons and a certain decomposition of ambient air during filling is permitted. However, this decomposition can then lead to degraded properties and lower yields of the coating.
  • a further disadvantage is that precursors, which are corrosive, can only be handled in vessels made of particularly corrosion-resistant materials. This material requirement is particularly important when the precursor with the vessel material in high Concentrations, ie in the liquid state or in vapor form at elevated vapor pressures, at higher temperatures or for a long time in contact.
  • the use of metallic materials for vessels is very advantageous in terms of the simultaneously required vacuum technology, but disadvantageous or expensive in terms of corrosion resistance.
  • the use of corrosion-resistant glass for vessels is again disadvantageous or expensive with regard to the vacuum technology (seals, glass-metal compounds).
  • the precursor Upon prolonged contact with hot metal walls, the precursor can be thermally decomposed and form byproducts, which can either degrade the coating properties or reduce the yield of the coating.
  • the object of the invention is therefore to provide a simple device for supplying vapors liquid or solid precursors, which does not have the disadvantages of the prior art.
  • a device for supplying the vapor of a liquid or solid precursor into a coating chamber for depositing a coating which is characterized in that the liquid or solid precursor is in a closed precursor cartridge which is wholly or partly in a housing which has a connection to a coating chamber. To deliver the vapor into the coating chamber, the cartridge is not re-closed so that steam can enter the housing which can be directed to the coating chamber.
  • the invention relates to a method for supplying the vapor of a liquid or solid precursor into a coating chamber for depositing a coating with the device according to the invention.
  • the invention relates to a precursor cartridge which is not resealable after a single opening and contains no foreign gas.
  • the device on which the invention is based is particularly suitable for supplying the vapor of liquid or solid precursors to a coating process, because the precursors can be easily filled into a cartridge, stored in a stable manner against decomposition processes and fed to the process.
  • a suitable inert gas device such as e.g. a glove box with the required safety devices used.
  • This device provided only once allows the necessary, adequate and safe handling of Recursoren for a variety of coating equipment in a very short time. As a result, the effort of handling is significantly reduced.
  • the degassed and filled precursors can be stored in the sealed cartridges in a vacuum-tight, even at low temperatures. This ensures the purity of the precursors over a long period of time until coating, and thus improves the properties and yield of the coatings.
  • the amount of precursor used may be that for a single coating process. This use of portion cartridges minimizes thermal damage to sensitive precursors over the storage of larger quantities of precursor for multiple processes in the vapor source.
  • a non-reclosable cartridge that can be opened in a simple and controlled manner.
  • the construction of the cartridge in an embodiment of a fused glass ampoule offers, for example, the advantage of a very simple production from a virtually inert, ie non-degradable, material with respect to each precursor.
  • Such a cartridge of degassed precursor 1H, 1H, 2H, 2H-perfluorodecyltrichlosilan could be stored in storage trials for months as a solid over dry ice at -78 ° C, without a noticeable leakage has occurred.
  • Advantage of the precursor cartridge according to the invention is in particular the less expensive construction.
  • non-reclosable precursor cartridge Another advantage of the non-reclosable precursor cartridge is the maximum seal of the device over percusor cartridges with resealable orifice.
  • For reversibly closable openings in these applications are Hoch the. Ultra-high vacuum valves whose leakage rates are on the order of 10-8 mbar L s-1 are required (see also JF O ' Hanlon, A User 's Guide to Vacuum Technology, 3rd edition, John Wiley & Sons, Hoboken, 2003, page 331) et seq.). With such a leakage rate, for example, in a cartridge volume of 10 mL over a period of only 10 days, a pressure increase of 1 mbar is obtained.
  • Figure 1 An embodiment of the precursor cartridge according to the invention
  • Figure 2 An open embodiment of the precursor cartridge according to the invention before sealing
  • Figure 3 Connection of an embodiment of the precursor cartridge according to the invention to a device for degassing and sealing
  • Figure 4 An embodiment of the device according to the invention for degassing and closing precursor cartridges
  • Figure 5 A perspective view of an embodiment of the invention
  • FIG. 6 The exploded view of the steam source according to Figure 5
  • Figure 7 The perspective view of the steam source as shown in Figure 5 with a
  • Figure 8 The perspective view of the steam source as shown in Figure 5 with a
  • Figure 10 A perspective view of another embodiment of a vapor source according to the invention with integrated heating
  • FIG. 1 Exploded view of the steam source according to Figure 10
  • Figure 12 The perspective view of the steam source according to Figure 10 with a
  • FIG. 13 Steam source according to Figure 10 with housing
  • FIG. 1 shows a preferred embodiment of the precursor cartridge 100 according to the invention, which is designed as glass breaker ampoule.
  • the precursor cartridge 100 On the cylindrical hollow body 101 is located at a constriction an annular predetermined breaking point 102 on which the upper part of the hollow body can be broken off by lateral pressure.
  • the ampoule contains the liquid or solid precursor 103.
  • the liquid or solid precursor 103 can be placed in the initially open container 104 ( Figure 2). If the precursor 103 is a substance which can not be handled in normal ambient air, the filling operation is preferably carried out in a dry inert gas environment, for example in a nitrogen-filled glove box.
  • Such precursors are 1H, 1H, 2H, 2H-perfluorododecyltrichlorosilane (CI 3 Si-CH 2 -CH 2 - (CF 2) 10-F) or 1 H, 1 H, 2H, 2H-perfluorotetradecyltrichlorosilane (CI 3 Si-CH 2 -CH 2 - CF2) 12-F), which due to their high sensitivity to hydrolysis can not be handled in normal ambient air.
  • 1H, 1H, 2H, 2H-perfluorododecyltrichlorosilane CI 3 Si-CH 2 -CH 2 - (CF 2) 10-F
  • 1 H, 1 H, 2H, 2H-perfluorotetradecyltrichlorosilane CI 3 Si-CH 2 -CH 2 - CF2) 12-F
  • hydrolysis-sensitive precursors such as the substances frequently used for coatings: 1H, 1H, 2H, 2H-perfluorocyclotrichlorosilane (CI3Si-CH2-CH2- (CF2) 6-F) or 1H, 1H, 2H, 2H -
  • Perfluorodecyltrichlorosilane (CI3Si-CH2-CH2- (CF2) 8-F) are advantageously transferred in a glove box, since even here - depending on the handling time - partial hydrolysis can be avoided and the handling is facilitated.
  • the still open container 104 can be inserted into a device for degassing and melting ( Figure 3).
  • the ampoule opening is thereby mounted vacuum-tight with the aid of an O-ring 108 on a flange 105.
  • Degassing of the precursor serves to release gas dissolved in the substance, e.g. Air or the protective gas used in the synthesis or handling to remove. This ensures that when vaporizing the precursor in the coating system only the pure vapor is metered and used for coating and no unknown amounts of gas can distort the dosage or interfere with coating.
  • precursor 103 is carefully freed from dissolved gas by multiple cyclic sequences of freezing, pumping, and melting processes ( Figure 4).
  • liquid precursors 103 are first frozen by cooling with liquid nitrogen.
  • the container 104 in which the solidified liquid is evacuated by means of a vacuum pump 109 via the valve 1 10.
  • the final pressure can be controlled by means of a manometer 1 1 1.
  • valve 1 10 is closed and the precursor is melted by heating to room temperature, so that dissolved gas can escape from the liquid, which can be seen by a blistering during melting. Once the substance has completely melted, takes place further freezing, pumping, melting cycle, until the melting process proceeds without the formation of bubbles.
  • Precursors which are solid at room temperature, are degassed in the same way, which must be heated to melt here and the freezing process takes place without further cooling.
  • the apparatus is heated during melting to the required melting temperature by means of a heater 1 12.
  • a thermometer 1 13 serves to control or regulate the temperature.
  • the vessel 104 is closed by melting ( Figure 3).
  • the precursor is first frozen and then the glass of the vessel by means of the flame 106 of a cartridge gas burner 1 14 by circular movements of the burner by means of the holder 1 15 at a deep groove ball bearing 107 around the vessel 104 around uniformly heated.
  • the glass jar constricts thereby evenly and is melted off.
  • the precursor cartridge 101 can be mounted in a vapor source 16 (Figure 5).
  • the exploded view in Figure 6 shows the structure of a preferred embodiment.
  • the cartridge 101 is inserted into the housing 1 17 of the steam source.
  • a sealing ring 1 19 and a lock nut 120 seal the housing at the bottom vacuum-tight.
  • the steam source is connected to the coating apparatus.
  • a pneumatically operated cylinder 121 with a shear fork 123 serves to open the precursor cartridge.
  • a thermometer 122 is used to measure and control the temperature of the precursor.
  • Figures 7 and 8 show a preferred embodiment of the vapor source with the precursor cartridge closed ( Figure 7) and opened (Figure 8).
  • Figure 9 shows an example of the connection of two vapor sources 1 16 and 216 to a coating chamber 124 in a coating apparatus 125 for coating a substrate 139.
  • the connection is made via the valves 126 and 226.
  • the vapor sources with heaters 127 and 227 can be heated.
  • the thermometers 122 and 222 serve to control and regulate the temperatures.
  • the valves 126, 226, and 129 are opened and the housings of the sources are evacuated by the vacuum pump 138 to a base pressure, which is measured on the gauge 132.
  • the value of this base pressure depends on the type of substances. For precursors 1H, 1H, 2H, 2H-perfluorodecyltrichlorosilane and water, a pressure ⁇ 10-5 mbar has been shown to be advantageous.
  • valves 126, 226 and 129 are closed and opened that precursor cartridge whose vapor is to be introduced into the coating chamber.
  • steam flows into the housing 17 of the vapor source and the vapor of the precursor can be introduced into the coating chamber 124 by opening valves 126 and 130.
  • the preselected pressure is measured on the manometer 133.
  • the valves 126 and 130 are closed and evacuated via the valves 140 and 145, the steam supply line.
  • the protective trap 147 is cooled, here the steam is frozen until later disposal. In the same way as previously described for the steam source 16, steam can then be introduced from the source 226 into the coating chamber.
  • valve 142 Upon completion of the coating of the substrate 139, the vapor from the coating chamber is directed via valve 142 into a cooled waste and protective trap. This is used to capture, freeze and collect residues and reaction products of the precursors before they are collected after several coating operations.
  • Unnecessary precursors in the open cartridge of the vapor source may e.g. for the steam source 1 16 are also passed through the valves 126 and 140 in the waste and protective trap. Subsequently, the steam source is optionally briefly boiled by increasing the temperature and evacuated via the valves 1 16 and 129 with the turbomolecular pump 138. The steam source is thereby cleaned and ready for use with a new cartridge after removal of the likewise clean and dry lower and upper part of the cartridge.
  • the coating system can be used very variably for different precursors. Moreover, the risk of decomposition of precursors before use is minimized.
  • FIGS 10 and 11 show a further embodiment of the vapor source 151 according to the invention with integrated heaters.
  • the parts of the vapor source which come into contact with the vapor of the precursor are heated to a homogeneously distributed temperature.
  • the temperature is measured and controlled by means of a thermometer 159.
  • the housing 153 of the vapor source is connected by means of the flange 158 to the coating apparatus and is closed with the flange 156 via a seal 163 and stud bolts 164 and hex nuts 157.
  • the shear pin 160 moves to the predetermined breaking point of the cartridge 162, whereupon the top of which breaks open controlled ( Figure 12), so that steam of the precursor into the inner volume of the housing 153 entry.
  • Figure 13 shows the steam source as shown in Figure 10 in its full construction with a 165 and 166 panel used for thermal insulation.
  • the source is firmly attached to the coating apparatus.
  • the source is cooled to an appropriate temperature, the base 166 of the panel removed by loosening the screws 167. After opening the flange 156, the precursor cartridge can be exchanged.
  • Embodiments of the present invention relate to apparatus for supplying the vapor of a liquid or solid precursor into a coating chamber for depositing a coating, the liquid or solid precursor being in a sealed precursor cartridge which is wholly or partly enclosed by a housing. in the after opening of the cartridge, the steam enters the precursor, wherein
  • the precursor cartridge can be made of glass or other mineral material.
  • the precursor cartridge can be broken open.
  • a shear bar can be used to break the precursor cartridge.
  • the housing can be evacuated before opening the precursor cartridge.
  • embodiments of the present invention relate to sealed containers having a liquid or solid precursor for depositing a coating on the precursor vapor, the container not being resealable after the opening and containing no foreign gas.
  • the present invention relates to methods for supplying the vapor of a liquid or solid Precursors in a coating chamber for depositing a coating, wherein
  • liquid or solid precursor is contained in a sealed precursor cartridge which is completely or partially enclosed by a housing,
  • the precursor cartridge can be made of glass or other mineral material.
  • the precursor cartridge can be broken open.
  • a shear bar can be used.
  • the housing in which the precursor cartridge is located in front of the opening of the cartridge can be evacuated.
  • the present invention relates to a sealed container having a liquid or solid precursor for depositing a coating with the vapor of the precursor. wherein the container after the opening is not resealable and contains no foreign gas.
  • the present invention relates to methods for supplying the vapor of a liquid or solid Precursors in a coating chamber for depositing a coating, wherein
  • liquid or solid precursor is contained in a sealed precursor cartridge which is completely or partially enclosed by a housing,
  • a non-reclosable connection is made between the vapor of the precursor and the housing and vapor of the precursor enters the housing; c) vapor of the precursor is directed into the coating chamber to deposit a coating.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif d'amenée de vapeur d'un précurseur liquide ou solide dans une chambre de revêtement, pour le dépôt d'une couche, au moyen d'un cartouche précurseur fermée, logée en totalité ou en partie dans un boîtier, lequel possède un raccordement avec une chambre de revêtement. Pour l'amenée de la vapeur dans la chambre de revêtement, la cartouche est ouverte de manière non refermable, de sorte que de la vapeur qui peut être envoyée dans la chambre de revêtement, peut pénétrer dans le boîtier.
PCT/EP2012/068280 2011-09-16 2012-09-17 Source de vapeur pour le dépôt de couches minces WO2013038023A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE201110113406 DE102011113406A1 (de) 2011-09-16 2011-09-16 Dampfquelle zur Abscheidung dünner Schichten
DE102011113406.2 2011-09-16

Publications (1)

Publication Number Publication Date
WO2013038023A1 true WO2013038023A1 (fr) 2013-03-21

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PCT/EP2012/068280 WO2013038023A1 (fr) 2011-09-16 2012-09-17 Source de vapeur pour le dépôt de couches minces

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DE (1) DE102011113406A1 (fr)
WO (1) WO2013038023A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2937443A1 (fr) * 2014-04-24 2015-10-28 Riber Cellule d'évaporation

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH235008A (de) * 1941-09-24 1944-11-15 Dichter Jakob Einrichtung zum Abtrennen der Spiesse oder Spiessenden von Ampullen und zum Zerlegen von anderen länglichen Glasgegenständen.
GB967769A (en) * 1961-09-12 1964-08-26 Anrep Rene Improvements in or relating to glass ampoules or similar vessels adapted to be broken open without applying a file, and to a method for processing the same
JPH02215027A (ja) * 1989-02-15 1990-08-28 Hitachi Ltd イオン源
US5288325A (en) 1991-03-29 1994-02-22 Nec Corporation Chemical vapor deposition apparatus
WO1998046190A1 (fr) * 1997-04-16 1998-10-22 Euro-Trol B.V. Ampoule etanche aux gaz
US6579372B2 (en) 2000-06-24 2003-06-17 Ips, Ltd. Apparatus and method for depositing thin film on wafer using atomic layer deposition
US20040118452A1 (en) * 2002-01-30 2004-06-24 Plasmion Corporation Apparatus and method for emitting cesium vapor
US7413774B2 (en) 2003-06-27 2008-08-19 Applied Microstructures, Inc. Method for controlled application of reactive vapors to produce thin films and coatings
US20090263578A1 (en) 2008-04-22 2009-10-22 Picosun Oy Apparatus and methods for deposition reactors
US7687110B2 (en) 2005-03-08 2010-03-30 Applied Microstructures, Inc. Method of in-line purification of CVD reactive precursor materials
US20100203244A1 (en) 2004-12-30 2010-08-12 Msp Corporation High accuracy vapor generation and delivery for thin film deposition

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH235008A (de) * 1941-09-24 1944-11-15 Dichter Jakob Einrichtung zum Abtrennen der Spiesse oder Spiessenden von Ampullen und zum Zerlegen von anderen länglichen Glasgegenständen.
GB967769A (en) * 1961-09-12 1964-08-26 Anrep Rene Improvements in or relating to glass ampoules or similar vessels adapted to be broken open without applying a file, and to a method for processing the same
JPH02215027A (ja) * 1989-02-15 1990-08-28 Hitachi Ltd イオン源
US5288325A (en) 1991-03-29 1994-02-22 Nec Corporation Chemical vapor deposition apparatus
WO1998046190A1 (fr) * 1997-04-16 1998-10-22 Euro-Trol B.V. Ampoule etanche aux gaz
US6579372B2 (en) 2000-06-24 2003-06-17 Ips, Ltd. Apparatus and method for depositing thin film on wafer using atomic layer deposition
US20040118452A1 (en) * 2002-01-30 2004-06-24 Plasmion Corporation Apparatus and method for emitting cesium vapor
US7413774B2 (en) 2003-06-27 2008-08-19 Applied Microstructures, Inc. Method for controlled application of reactive vapors to produce thin films and coatings
US20100203244A1 (en) 2004-12-30 2010-08-12 Msp Corporation High accuracy vapor generation and delivery for thin film deposition
US7687110B2 (en) 2005-03-08 2010-03-30 Applied Microstructures, Inc. Method of in-line purification of CVD reactive precursor materials
US20090263578A1 (en) 2008-04-22 2009-10-22 Picosun Oy Apparatus and methods for deposition reactors

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
"Thin Film Processes", 1991, ACADEMIC PRESS
D.M. HAUSMANN; E. KIM; J. BECKER; R.G. GORDON, CHEMISTRY OF MATERIALS, vol. 14, 2002, pages 4350
DIEHL ET AL: "Vapour growth of three In2S3 modifications by iodine transport", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 28, no. 3, 1 April 1975 (1975-04-01), pages 306 - 310, XP022562792, ISSN: 0022-0248 *
J. F. OHANON: "A User's Guide to Vacuum Technology", 2003, JOHN WILEY & SONS, pages: 331
J.A. VERNABLES: "Introduction to Surface and Thin Film Processes", 2001, CAMBRIDGE UNIVERSITY PRESS
L. CHOY: "Chemical Vapour Deposition of Coatings", PROGRESS IN MATERIALS SCIENCE, vol. 48, no. 2, 2003, pages 57 - 170, XP008126625, DOI: doi:10.1016/S0079-6425(01)00009-3
S.M. GEORGE, CHEMICAL REVIEW, vol. 110, 2010, pages 111
T.M. MAYER; M.P. DE BOER; N.D. SHINN; P.J. CLEWS; T.A. MICHALSKE, JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY, vol. B18, no. 5, 2000, pages 2433

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2937443A1 (fr) * 2014-04-24 2015-10-28 Riber Cellule d'évaporation
FR3020381A1 (fr) * 2014-04-24 2015-10-30 Riber Cellule d'evaporation

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