Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02521—Materials
  • H01L21/02538—Group 13/15 materials
  • H01L21/02546—Arsenides
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/0257—Doping during depositing
  • H01L21/02573—Conductivity type
  • H01L21/02576—N-type
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02612—Formation types
  • H01L21/02617—Deposition types
  • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
  • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
  • H01L31/035236—Superlattices; Multiple quantum well structures
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
  • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
  • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals

Definitions

• the technical field The invention relates to a technology for growing semiconductor heterostructures with multiple quantum wells by molecular beam epitaxy (MBE) and can be used in the manufacture of devices based on photodetector arrays with sensitivity in the deep infrared range (8-12 microns). Photosensitivity in the indicated spectral range can be ensured at low temperatures (less than 77 ° K) due to energy absorption during indirect carrier transitions between subbands in the active region of the heterostructure, consisting of alternating pairs of quantum wells (material with a smaller band gap) and barriers (material with a larger band gap).
• MBE molecular beam epitaxy
• quantum wells are usually modulated by doping (for example, with a donor impurity -
• Si to high concentrations (including the so-called “delta doping” is used), however, it is necessary to take into account the phenomenon of surface segregation, which leads to heterogeneity of the impurity concentration, most pronounced at elevated growth temperatures;
• DX- centers recombination centers
• a known method of growing a heterostructure for an infrared detector including a substrate and overlying semiconductor layers - contact and layers that form an active region containing 50 GaAs quantum wells and AlGaAs quantum barriers.
• Quantum wells are doped with Si with a doping level of 3.3 - 10 18 cm "3.
• the substrate temperature is maintained at 690 ° C, see D. K. Sengupta et al. Growth and Characterization of n-Type GaAs / AlGaAs Quantum Well Infrared Photodetector on GaAs -on- Si Substrate, Journal of Electronic Materials, Vol. 27, No.
• a known method of growing a heterostructure for an infrared photodetector including a substrate and overlying semiconductor layers forming an active region containing many silicon doped quantum wells, as well as many quantum barriers.
• the method is carried out by the MPE method by heating the substrate in vacuum at t ° 580 ° C, reagents Ga and As are fed into the quantum wells, and A1, Ga and As are sent to the quantum barriers.
• Si quantum well doping level 1 x 10 1 8 cm " 3, see K. L. Tsai et al., Influence of oxygen on the performance of GaAs / AlGaAs quantum wellinfrared photodetectors, Journal of Applied Physics 76 (1), 1 July 1994, PP 274-277 (copy attached).
• the process temperature is reduced in comparison with the analogue described above, which prevents the thermal instability of GaAs and provides a certain sharpness of heteroboundaries, however, the low temperature of the process causes an increased number of crystalline defects (dislocations and deep impurities, such as oxygen), which are recombination centers (DX centers) that reduce the absorption efficiency in quantum wells and, accordingly, the sensitivity and detectability of an infrared detector.
• DX centers recombination centers
• the objective of the present invention is to reduce the number of crystalline defects and thereby increase the sensitivity (signal-to-noise ratio) and detection ability (minimum value of the detected photodetector signal).
• a method for growing a heterostructure for an infrared photodetector comprising a substrate and overlying semiconductor layers — contact and layers forming an active region containing a plurality of quantum wells and barriers by the molecular beam method epitaxy by heating the substrate in a vacuum and alternately supplying reagent fluxes to quantum wells and barriers, as well as doping impurities - Si into quantum wells, whereby reagents: Ga and As are fed into quantum wells, and A1, Ga and As, into quantum barriers, quantum wells additionally supply A1 in an amount ensuring its molar fraction in the quantum well of 0.02-0.1 0, while in the process of growing the layers forming the active region, the substrate temperature is maintained within 700 - 750 ° C, and the level of doping of quantum pits are supported within (2 - 5) x 10 1 7 cm " 3.
• the implementation of the distinguishing features of the invention leads to an important new property of the claimed method: ensuring the sharpness of heterointerfaces along with a decrease in the number of crystalline defects.
• submission to A1 quantum wells in an amount that ensures its molar fraction in the quantum well in the range of 0.02-0.10 increases the thermal stability of the quantum well material and prevents a decrease in the sharpness of the heteroboundary even at sufficiently high (700 - 750 ° C) temperatures, which the number of crystalline defects is significantly reduced.
• the lower limit - 700 ° C is due to the fact that at temperatures above 700 ° C the adsorption of impurities (oxygen atoms) is negligible, an increase in the process temperature above 750 ° C is not rational, as it does not give an additional effect. In this case, the surface segregation of Si atoms is reduced due to a decrease in the doping level to (2 - 5) 1 7 3
• a decrease in the doping level to the above values became possible due to the fact that at a process temperature increased to 700–750 ° C, the number of defects decreases and, accordingly, the sensitivity of the active region of the heterostructure increases, which compensates for the decrease in sensitivity associated with the doping level.
• a crystalline substrate 2 for growing a heterostructure.
• cryopanels 3 with liquid nitrogen are used. Maneuvering the substrate 2 and its heating carried out using a manipulator 4.
• the initial reagents in the form of atomic beams of group III metals (A1, Ga) and dopants (Si) are fed to the substrate 2 from evaporators 5, and arsenic (As) is supplied through a source with cracker 6.
• the substrate 2 is heated to a temperature of 580-600 ° C to remove its own oxide by thermal decomposition. Then, flows of As from the source 6 and Ga and Si atoms from the evaporators 5 are simultaneously fed onto the heated surface of the substrate 2 to grow the lower contact layer of a given thickness and carrier concentration. Then, in a short period of time, the temperature of the substrate is simultaneously increased to values in the range of 700-750 ° C, the flow of Si atoms is blocked, and the atomic stream A1 is fed onto the substrate to grow the first barrier layer.
• the atomic fluxes A1 are switched so that the molar fraction of aluminum is in the range of 0.02-0, 10, and the flux of Si atoms is opened, providing a doping level of (2-5) x 10 cm " quantum well.
• the growth of the given thickness of the quantum well is carried out, after which the switching back to the growth mode of the barrier layer is carried out.
• the cycle of growing the quantum well / barrier pair is repeated a predetermined number of times, after which the flow of A1 atoms is blocked and the upper GaAs contact layer is grown.
• the heterostructure grown for the infrared photodetector according to the claimed method has a significantly lower concentration of deep centers recombination in the barrier layers and, while ensuring the sharpness of the heteroboundaries, respectively, has a high conversion efficiency of the incident radiation.
• the implementation of the method is carried out using known equipment and materials. According to the applicant, the invention meets the criterion of "Industrial Applicability" ("IA").

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• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Computer Hardware Design (AREA)
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• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
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• Chemical & Material Sciences (AREA)
• Nanotechnology (AREA)
• Crystallography & Structural Chemistry (AREA)
• Life Sciences & Earth Sciences (AREA)
• Optics & Photonics (AREA)
• Biophysics (AREA)
• Light Receiving Elements (AREA)
• Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

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• 2011
  • 2011-07-28 RU RU2011131881/28A patent/RU2469432C1/ru active
• 2012
  • 2012-07-27 WO PCT/RU2012/000621 patent/WO2013015722A1/ru active Application Filing
  • 2012-07-27 CN CN201280047193.5A patent/CN103959441B/zh not_active Expired - Fee Related
• 2014
  • 2014-01-28 IL IL230699A patent/IL230699A/en active IP Right Grant

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