IL230699A - Method for growing a heterostructure for an infrared photodetector - Google Patents
Method for growing a heterostructure for an infrared photodetectorInfo
- Publication number
- IL230699A IL230699A IL230699A IL23069914A IL230699A IL 230699 A IL230699 A IL 230699A IL 230699 A IL230699 A IL 230699A IL 23069914 A IL23069914 A IL 23069914A IL 230699 A IL230699 A IL 230699A
- Authority
- IL
- Israel
- Prior art keywords
- heterostructure
- growing
- infrared photodetector
- photodetector
- infrared
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Light Receiving Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2011131881/28A RU2469432C1 (en) | 2011-07-28 | 2011-07-28 | Method to grow heterostructure for infrared photodetector |
PCT/RU2012/000621 WO2013015722A1 (en) | 2011-07-28 | 2012-07-27 | Method for growing a heterostructure for an infrared photodetector |
Publications (2)
Publication Number | Publication Date |
---|---|
IL230699A0 IL230699A0 (en) | 2014-03-31 |
IL230699A true IL230699A (en) | 2017-09-28 |
Family
ID=47601357
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL230699A IL230699A (en) | 2011-07-28 | 2014-01-28 | Method for growing a heterostructure for an infrared photodetector |
Country Status (4)
Country | Link |
---|---|
CN (1) | CN103959441B (en) |
IL (1) | IL230699A (en) |
RU (1) | RU2469432C1 (en) |
WO (1) | WO2013015722A1 (en) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2089656C1 (en) * | 1993-12-23 | 1997-09-10 | Ольга Викторовна Гончарова | Method of production of photosensitive resistive and optically nonlinear thin-filmed heterostructures based on semiconductor and dielectric materials |
RU2065644C1 (en) * | 1994-06-14 | 1996-08-20 | Институт физики полупроводников СО РАН | Method of manufacture of photodetector cell based on multilayer heterostructures ga as/al ga as |
US5995260A (en) * | 1997-05-08 | 1999-11-30 | Ericsson Inc. | Sound transducer and method having light detector for detecting displacement of transducer diaphragm |
US6559471B2 (en) * | 2000-12-08 | 2003-05-06 | Motorola, Inc. | Quantum well infrared photodetector and method for fabricating same |
JP4829004B2 (en) * | 2006-05-10 | 2011-11-30 | 富士通株式会社 | Photodetector and manufacturing method thereof |
-
2011
- 2011-07-28 RU RU2011131881/28A patent/RU2469432C1/en active
-
2012
- 2012-07-27 WO PCT/RU2012/000621 patent/WO2013015722A1/en active Application Filing
- 2012-07-27 CN CN201280047193.5A patent/CN103959441B/en not_active Expired - Fee Related
-
2014
- 2014-01-28 IL IL230699A patent/IL230699A/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
WO2013015722A1 (en) | 2013-01-31 |
IL230699A0 (en) | 2014-03-31 |
CN103959441B (en) | 2016-10-05 |
RU2469432C1 (en) | 2012-12-10 |
CN103959441A (en) | 2014-07-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FF | Patent granted | ||
KB | Patent renewed | ||
KB | Patent renewed |