WO2013008466A1 - 電流センサ用基板及び電流センサ - Google Patents
電流センサ用基板及び電流センサ Download PDFInfo
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- WO2013008466A1 WO2013008466A1 PCT/JP2012/004498 JP2012004498W WO2013008466A1 WO 2013008466 A1 WO2013008466 A1 WO 2013008466A1 JP 2012004498 W JP2012004498 W JP 2012004498W WO 2013008466 A1 WO2013008466 A1 WO 2013008466A1
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- current sensor
- current
- sensor substrate
- primary conductor
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- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
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Definitions
- the present invention relates to a current sensor substrate and a current sensor, and more particularly to a current sensor substrate and a current sensor provided with a primary conductor having a U-shaped current path.
- a method of detecting a magnetic flux generated around the measurement current flowing is known.
- a method of arranging a magnetoelectric conversion element in the vicinity of a primary conductor through which a measurement current flows is known.
- FIG. 1 shows an example of a conventional current sensor.
- a U-shaped current conductor portion 204a is formed in the conductive clip 204, and the Hall element 208 is disposed inside the U-shape. Since the magnetic flux density is high near the center of the U-shaped inner side, the measurement sensitivity is improved.
- the current sensor shown in FIG. 1 requires manufacturing labor, such as requiring the conductive clip 204 to be separately provided and coupled to the lead terminals 202a to 202d, resulting in an increase in cost.
- the present invention has been made in view of such problems, and a first object thereof is to reduce manufacturing costs in a current sensor including a primary conductor having a U-shaped current path.
- a second object is to provide a substrate for the current sensor.
- a first aspect of the present invention includes a primary conductor having a U-shaped current path through which a current to be measured flows, and a magnetoelectric transducer disposed in the U-shaped opening.
- a current sensor substrate comprising: a support portion for supporting; and a lead terminal connected to the support portion, wherein the support portion is not electrically connected to the U-shaped current path.
- the primary conductor has a primary conductor terminal connected to the U-shaped current path, and the primary conductor terminal is the U of the current path.
- the lead terminal may extend in a direction opposite to the opening direction of the letter shape, and the lead terminal may extend in a direction opposite to the direction in which the primary conductor terminal extends.
- the support part of the current sensor substrate includes the first support part disposed in the U-shaped opening, You may make it have a 2nd support part adjacent to a 1st support part and not arrange
- the current sensor substrate according to any one of the first to third aspects, and the current path of the current sensor substrate disposed on the support portion of the current sensor substrate. And an IC chip having a magnetoelectric conversion element for detecting a magnetic flux generated from a current flowing through the current sensor, wherein the magnetoelectric conversion element is disposed inside the U-shape of the current path in a plan view. It is good.
- the magnetoelectric conversion element may be arranged close to the U-shaped corner portion of the current path.
- the current sensor substrate of the third aspect and the current path of the current sensor substrate disposed on the first support portion of the current sensor substrate flow.
- the conversion element may be a current sensor characterized in that it is a compound semiconductor magnetic sensor disposed inside the U-shape of the current path in plan view.
- the magnetoelectric conversion element may be a Hall element.
- a step is provided in the support portion of the current sensor substrate, and the magnetosensitive surface of the magnetoelectric transducer is the primary You may make it provide so that it may become substantially equal to the height of a conductor.
- a step is provided in the support portion of the current sensor substrate, and the size of the step is determined by the magnetoelectric conversion element.
- the thickness is t1 and the thickness of the primary conductor is t2, the value is larger than 0 and smaller than 2 ⁇ t1 + t2, and the step is a step in the direction of decreasing the height of the magnetosensitive surface of the magnetoelectric transducer. There may be.
- the configuration of the current sensor substrate and the current sensor can be simplified with a reduced number of parts, and the manufacturing cost can be reduced.
- FIG. 7 is a diagram showing a cross section taken along line AA ′ in the current sensor of FIG.
- FIG. 2 shows a current sensor according to the first embodiment.
- the current sensor 200 includes a primary conductor 210 having a U-shaped current path 210A and a primary conductor terminal 210B, a support portion 220A for supporting a magnetoelectric conversion element 230A such as a Hall element, and a signal terminal having lead terminals 220B_1 and 220B_2.
- a side member 220 hereinafter simply abbreviated as “member 220”) and an IC chip 230 having a magnetoelectric conversion element 230A that is disposed in the support portion 220A and detects a magnetic flux generated from a current flowing through the current path 210A. .
- the primary conductor 210, the member 220, and the IC chip 230 are molded with a resin 240 to form the current sensor 200.
- a portion excluding the IC chip 230 and the resin 240 is a current sensor substrate.
- the lead terminal 220B_1 represents a lead terminal connected to the support part 220A
- the lead terminal 220B_2 represents a lead terminal not connected to the support part 220A. In the description common to the lead terminals 220B_1 and 220B_2, each lead terminal is simply referred to as the lead terminal 220B.
- the support portion 220A is not electrically connected to the U-shaped current path 210A through which the current to be measured flows, and by configuring in this manner, a high withstand voltage between the primary conductor 210 and the IC chip 230 is ensured. can do.
- the U-shape of the current path 210A has an opening 210C in a direction opposite to the direction in which the primary conductor terminal 210B_1 extends, and the support 220A of the member 220 is disposed in the opening 210C.
- the lead terminal 220B_1 of the member 220 extends in a direction opposite to the direction in which the primary conductor terminal 210B extends.
- the support 220A and the lead terminal 220B_1 are integrally formed of a metal material, not a separate member. That is, the support part 220A and the lead terminal 220B_1 are physically integrated and are physically and electrically connected.
- the magnetoelectric conversion element 230A is disposed inside the U-shape of the current path 210A in plan view.
- the magnetic flux density is high in the U-shaped corner portion 210A 'of the current path 210A, it is preferable to dispose the magnetoelectric conversion element 230A close to the corner portion 210A'.
- the primary conductor 210 and the member 220 are separated, and the IC chip 230 disposed on the support portion 220A of the member 220 and the current path 210A of the primary conductor 210 do not contact each other. Clearance is obtained. The clearance ensures insulation between the primary conductor 210 and the IC chip 230, and enables a high breakdown voltage to be maintained inside the package.
- the lead terminal 220B_1 of the member 220 extends in a direction opposite to the direction in which the primary conductor terminal 210B extends, a creepage distance necessary for insulation can be secured on the outer periphery of the resin 240, and Will improve. If the primary conductor terminal 210B and the lead terminal 220B_1 are drawn from the same end surface of the resin 240, they are adjacent to each other outside the package, and it is difficult to ensure a sufficient creepage distance.
- the number of parts can be suppressed as compared with the conventional one, and the manufacturing cost can be reduced, and the breakdown voltage can be improved.
- FIG. 3 shows a current sensor according to the second embodiment.
- the current sensor 300 is different from the current sensor 200 of the first embodiment in that a magnetoelectric conversion element 330A such as a Hall element is not included in the IC chip 330 and is provided separately.
- the support 220A includes a first support 220A ′ disposed in the U-shaped opening 210C and a second support 220A ′′ adjacent to the first support 220A ′ and not disposed in the opening 210C.
- the first support portion 220A ′ is provided with a magnetoelectric conversion element 330A for detecting a magnetic flux generated from the current flowing through the current path 210A
- the second support portion 220A ′′ is provided with a magnetic force from the magnetoelectric conversion element 330A.
- An IC chip 330 for processing the output signal is arranged.
- the magnetoelectric conversion element 330A is disposed inside the U shape of the current path 210A in plan view.
- the magnetoelectric conversion element 330A is disposed, the first support portion 220A ′ disposed in the opening 210C of the current path 210A, and the IC chip 330 for signal processing are disposed. It is divided into the second support portion 220A ′′ not disposed in the opening 210C, and a compound semiconductor magnetic sensor with high sensitivity such as InSb, InAs, GaAs, etc. is used as the magnetoelectric conversion element 330A. Thereby, the current flowing through the current path 210A Measurement sensitivity can be improved.
- the U-shaped current path 210A can be made small and the overall length can be shortened.
- the current path 210A is reduced in size, the magnetic field concentration inside the U-shape is increased, and the current detection sensitivity is improved.
- the current path 210A is thinner than the other parts of the primary conductor 210 and has high resistance, so heat generation is concentrated. However, the downsizing of the current path 210A shortens the length of the current path 210A and reduces the amount of heat generation. .
- a current path having a C-shape, a V-shape, or a similar shape may be used for the current path 210A as one form of the U-shaped current path.
- FIGS. 4A, 4B, and 5A to 5C a method of manufacturing the current sensor 300 according to the second embodiment will be described.
- a lead frame on which a desired pattern is formed is produced from a single metal plate.
- FIG. 4A shows a portion corresponding to one current sensor.
- the magnetoelectric conversion element 330A is die-bonded to the first support portion 220A ′, and the IC chip 330 is die-bonded to the second support portion 220A ′′, and then wire bonding is performed (FIG. 4B).
- FIG. 5A is a plan view
- FIG. 5B is a front view
- FIG. 5C is a right side view.
- FIG. 6 is a perspective view showing the positional relationship between the primary conductor 210 and the magnetoelectric transducer 330A in the current sensor according to the second embodiment.
- FIG. 7 is a view showing a cross section AA ′ in the current sensor 300 of FIG.
- the magnetosensitive surface 331 is provided so as to be substantially equal to the height of the primary conductor 210.
- the first support portion 220A ′ is provided with a step by, for example, a method such as half-edge processing, and the exposed portion of the first support portion 220A ′ has a magnetoelectric conversion.
- the element 330A is installed. As a result, a magnetic flux generated by the current flowing through the primary conductor 210 is generated so as to pass in a direction perpendicular to the magnetosensitive surface 331. Therefore, the magnetic flux density on the magnetosensitive surface 331 of the magnetoelectric conversion element 330A is increased, and the measurement sensitivity of the current sensor 300 is improved.
- the size of the step is preferably larger than 0 and smaller than 2 ⁇ t1 + t2 when the thickness of the magnetoelectric transducer is t1 and the thickness of the primary conductor is t2.
- the magnetic flux density on the magnetic sensitive surface 331 of the magnetoelectric transducer 330A becomes the highest, and the current sensor 300 measures. Sensitivity is improved.
- the method of providing a step in the support portion is not limited to half-edge processing, and other methods such as a method of crushing by coining to mechanically thin or a bending method can also be applied.
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Abstract
U字形の電流経路を有する一次導体を備えた電流センサにおいて、製造コストを低減すること。電流センサ(200)は、U字形の電流経路(210A)を有する一次導体(210)と、磁電変換素子(230A)を支持するための支持部(220A)と、支持部(210A)に接続されるリード端子(220B_1)とを備え、支持部(220A)は電流経路(210A)と電気的に接続しないように形成されている。
Description
本発明は、電流センサ用基板及び電流センサに関し、より詳細には、U字形の電流経路を有する一次導体を備えた電流センサ用基板及び電流センサに関する。
従来、導体に流れる電流を測定する電流センサとして、測定電流が流れることにより周囲に生じる磁束を検出する方法が知られている。例えば、測定電流が流れる一次導体近傍に磁電変換素子を配置する方法がある。
図1(特許文献1の図7に対応)に、従来の電流センサの一例を示す。導電性クリップ204にU字形の電流導体部204aを形成し、ホール素子208を当該U字形の内側に配置している。U字形内側の中心付近は磁束密度が高くなるので測定感度が向上する。
しかしながら、図1記載の電流センサは、導電性クリップ204を別個に設けてリード端子202a~202dに結合することを要する等、製造上の手間がかかり、コストの増加を招く。
本発明は、このような問題点に鑑みてなされたものであり、その第1の目的は、U字形の電流経路を有する一次導体を備えた電流センサにおいて、製造コストを低減することにある。また、第2の目的は、当該電流センサ用の基板を提供することにある。
このような目的を達成するために、本発明の第1の態様は、被測定電流が流れるU字形の電流経路を有する一次導体と、前記U字形の開口部に配置される、磁電変換素子を支持するための支持部と、前記支持部に接続するリード端子と、を備え、前記支持部は前記U字形の電流経路と電気的に接続しないことを特徴とする電流センサ用基板である。
また、本発明の第2の態様は、第1の態様において、前記一次導体は、前記U字形の電流経路に接続する一次導体端子を有し、前記一次導体端子は、前記電流経路の前記U字形の開口方向とは逆方向に延在しており、前記リード端子は、前記一次導体端子が延在する方向とは逆方向に延在するようにしてもよい。
また、本発明の第3の態様は、第1又は第2の態様において、前記電流センサ用基板の前記支持部は、前記U字形の前記開口部に配置された第1の支持部と、前記第1の支持部に隣接し、前記開口部に配置されていない第2の支持部とを有するようにしてもよい。
また、本発明の第4の態様は、第1から3のいずれかの態様の電流センサ用基板と、前記電流センサ用基板の前記支持部に配置された、前記電流センサ用基板の前記電流経路を流れる電流から生じる磁束を検出する磁電変換素子を有するICチップとを備え、前記磁電変換素子は、平面視において前記電流経路の前記U字形の内側に配置されていることを特徴とする電流センサとしてもよい。
また、本発明の第4の態様は、第1から3のいずれかの態様の電流センサ用基板と、前記電流センサ用基板の前記支持部に配置された、前記電流センサ用基板の前記電流経路を流れる電流から生じる磁束を検出する磁電変換素子を有するICチップとを備え、前記磁電変換素子は、平面視において前記電流経路の前記U字形の内側に配置されていることを特徴とする電流センサとしてもよい。
また、本発明の第5の態様は、第3の態様において、前記磁電変換素子が、前記電流経路の前記U字形のコーナー部に近接して配置されているようにしてもよい。
また、本発明の第6の態様は、第3の態様の電流センサ用基板と、前記電流センサ用基板の前記第1の支持部に配置された、前記電流センサ用基板の前記電流経路を流れる電流から生じる磁束を検出する磁電変換素子と、前記電流センサ用基板の前記第2の支持部に配置された、前記磁電変換素子からの出力信号を処理するためのICチップとを備え、前記磁電変換素子は、平面視において前記電流経路の前記U字形の内側に配置された化合物半導体磁気センサであることを特徴とする電流センサとしてもよい。
本発明の第7の態様は、第4から6のいずれかの態様において、前記磁電変換素子は、ホール素子であるようにしてもよい。
本発明の第8の態様は、第4から7のいずれかの態様において、前記電流センサ用基板の前記支持部には段差が設けられており、前記磁電変換素子の感磁面は、前記一次導体の高さと略等しくなるように設けられているようにしてもよい。
本発明の第9の態様は、第4から7のいずれかの態様において、前記電流センサ用基板の前記支持部には段差が設けられており、前記段差の大きさは、前記磁電変換素子の厚みをt1、前記1次導体の厚みをt2とした時の、0より大きく2×t1+t2より小さい値であり、前記段差は前記磁電変換素子の感磁面の高さを低くする方向の段差であるようにしてもよい。
本発明の第7の態様は、第4から6のいずれかの態様において、前記磁電変換素子は、ホール素子であるようにしてもよい。
本発明の第8の態様は、第4から7のいずれかの態様において、前記電流センサ用基板の前記支持部には段差が設けられており、前記磁電変換素子の感磁面は、前記一次導体の高さと略等しくなるように設けられているようにしてもよい。
本発明の第9の態様は、第4から7のいずれかの態様において、前記電流センサ用基板の前記支持部には段差が設けられており、前記段差の大きさは、前記磁電変換素子の厚みをt1、前記1次導体の厚みをt2とした時の、0より大きく2×t1+t2より小さい値であり、前記段差は前記磁電変換素子の感磁面の高さを低くする方向の段差であるようにしてもよい。
本発明によれば、電流センサ用基板及び電流センサの構成を、部品点数を抑えた簡便なものとし、製造コストを低減することができる。
以下、図面を参照して本発明の実施形態を詳細に説明する。
(第1の実施形態)
図2に、第1の実施形態に係る電流センサを示す。電流センサ200は、U字形の電流経路210A及び一次導体端子210Bを有する一次導体210と、ホール素子等の磁電変換素子230Aを支持するための支持部220A、及びリード端子220B_1,220B_2を有する信号端子側部材220(以下、単に「部材220」と略記する。)と、支持部220Aに配置された、電流経路210Aを流れる電流から生じる磁束を検出する磁電変換素子230Aを有するICチップ230とを備える。一次導体210、部材220、及びICチップ230を樹脂240でモールドして、電流センサ200が形成される。ICチップ230及び樹脂240を除いた部分が電流センサ用基板である。
リード端子220B_1は支持部220Aに接続されているリード端子を表し、リード端子220B_2は支持部220Aに接続されていないリード端子を表してある。なお、リード端子220B_1,220B_2に共通の説明では各リード端子が単にリード端子220Bとして参照される。
支持部220Aは、被測定電流が流れるU字形の電流経路210Aに電気的に接続されておらず、このように構成することによって、一次導体210とICチップ230との間の高い絶縁耐圧を確保することができる。
(第1の実施形態)
図2に、第1の実施形態に係る電流センサを示す。電流センサ200は、U字形の電流経路210A及び一次導体端子210Bを有する一次導体210と、ホール素子等の磁電変換素子230Aを支持するための支持部220A、及びリード端子220B_1,220B_2を有する信号端子側部材220(以下、単に「部材220」と略記する。)と、支持部220Aに配置された、電流経路210Aを流れる電流から生じる磁束を検出する磁電変換素子230Aを有するICチップ230とを備える。一次導体210、部材220、及びICチップ230を樹脂240でモールドして、電流センサ200が形成される。ICチップ230及び樹脂240を除いた部分が電流センサ用基板である。
リード端子220B_1は支持部220Aに接続されているリード端子を表し、リード端子220B_2は支持部220Aに接続されていないリード端子を表してある。なお、リード端子220B_1,220B_2に共通の説明では各リード端子が単にリード端子220Bとして参照される。
支持部220Aは、被測定電流が流れるU字形の電流経路210Aに電気的に接続されておらず、このように構成することによって、一次導体210とICチップ230との間の高い絶縁耐圧を確保することができる。
電流経路210AのU字形は、一次導体端子210B_1が延在する方向とは逆方向に開口部210Cを有し、部材220の支持部220Aは、この開口部210Cに配置されている。そして、部材220のリード端子220B_1は、一次導体端子210Bが延在する方向とは逆方向に延在する。
支持部220Aとリード端子220B_1とは、別個の部材ではなく、金属材で一体形成されている。すなわち、支持部220Aとリード端子220B_1とは物理的に一体となっており、物理的にも電気的にも接続されている。
支持部220Aとリード端子220B_1とは、別個の部材ではなく、金属材で一体形成されている。すなわち、支持部220Aとリード端子220B_1とは物理的に一体となっており、物理的にも電気的にも接続されている。
上述したように、U字形内側の中心付近は磁束密度が高くなり測定感度が向上するため、磁電変換素子230Aは、平面視において電流経路210AのU字形の内側に配置されている。特に、電流経路210AのU字形のコーナー部210A’では磁束密度が高くなるため、コーナー部210A’に近接して磁電変換素子230Aを配置するのが好ましい。
本実施形態に係る電流センサ200においては、一次導体210と部材220が分離され、部材220の支持部220Aに配置されたICチップ230と一次導体210の電流経路210Aが接触せず、両者の間にクリアランスが得られる。当該クリアランスは、一次導体210とICチップ230との間の絶縁を保証し、パッケージ内部における高い耐圧の維持を可能にする。
加えて、部材220のリード端子220B_1が、一次導体端子210Bが延在する方向とは逆方向に延在することにより、樹脂240の外周において絶縁に必要な沿面距離を確保することができ、耐圧が向上する。一次導体端子210Bとリード端子220B_1が樹脂240の同一端面から引き出されるような構成であると、両者がパッケージ外部で隣接することとなり、十分な沿面距離の確保が困難である。
このように、第1の実施形態に係る電流センサ200は、従来よりも部品点数が抑えられ、製造コストが低減することに加えて、耐圧向上を図ることができる。
(第2の実施形態)
図3に、第2の実施形態に係る電流センサを示す。電流センサ300が第1の実施形態の電流センサ200と異なるのは、ホール素子等の磁電変換素子330AがICチップ330に含まれておらず、別個に設けられている点である。
図3に、第2の実施形態に係る電流センサを示す。電流センサ300が第1の実施形態の電流センサ200と異なるのは、ホール素子等の磁電変換素子330AがICチップ330に含まれておらず、別個に設けられている点である。
支持部220Aは、U字形の開口部210Cに配置された第1の支持部220A’と、第1の支持部220A’に隣接し、開口部210Cに配置されていない第2の支持部220A”とを有する。第1の支持部220A’には、電流経路210Aを流れる電流から生じる磁束を検出する磁電変換素子330Aが配置され、第2の支持部220A”には、磁電変換素子330Aからの出力信号を処理するためのICチップ330が配置される。磁電変換素子330Aは、平面視において電流経路210AのU字形の内側に配置されている。
本実施形態に係る電流センサ300は、磁電変換素子330Aのみが配置され、電流経路210Aの開口部210Cに配置される第1の支持部220A’と、信号処理用のICチップ330が配置され、開口部210Cに配置されない第2の支持部220A”とに分け、磁電変換素子330Aとして、InSb、InAs、GaAs等の感度の高い化合物半導体磁気センサを用いる。これにより、電流経路210Aを流れる電流の測定感度を向上させることができる。
加えて、開口部210Cに配置する必要があるのはICチップ330ではなく磁電変換素子330Aのみであるため、U字形の電流経路210Aを小さく、且つ全長を短くすることができる。電流経路210Aが小型化すると、U字形の内側における磁場集中が高まり、電流の検出感度向上が得られる。
また、電流経路210Aは、一次導体210のその他の部分よりも細く、抵抗が高いため発熱が集中するが、本実施形態による小型化により電流経路210Aの長さが短くなり、発熱量が低減する。
また、電流経路210AにはU字形電流経路の一形態として、例えば、C字形、V字形、またはこれらに類似する形状の電流経路を使用しても良い。
ここで、図4A、図4B及び図5A~5Cを参照して、第2の実施形態に係る電流センサ300の製造方法を説明する。第1の実施形態に関しても同様である。まず、一枚の金属板から、所望のパターンが形成されたリードフレームを作製する。図4Aは、一個の電流センサに対応する一部分を示している。次いで、磁電変換素子330Aを第1の支持部220A’に、ICチップ330を第2の支持部220A”にダイボンディングした後、ワイヤボンディングを行う(図4B)。最後に、一次導体210、部材220、及びICチップ330を樹脂240でモールドし、リードカットを行い、フォーミングにより高電圧側の一次導体端子210B及び低電圧側のリード端子(信号端子)220B_1,220B_2を形成する。
図5Aは平面図、図5Bは正面図、図5Cは右側面図である。
図5Aは平面図、図5Bは正面図、図5Cは右側面図である。
次に、図3に示した電流センサ300における一次導体210と磁電変換素子330Aとの位置関係について図6および図7を参照して説明する。図6は、第2の実施形態に係る電流センサにおいて、一次導体210と磁電変換素子330Aとの位置関係を示す斜視図である。図7は、図6の電流センサ300において、A-A´断面を示す図である。
図6に示した磁電変換素子330Aは、感磁面331を有し、この感磁面331が一次導体210の高さと略等しくなるように設けられている。本実施形態では、図7に示すように、第1の支持部220A’には例えばハーフエッジ加工等の手法により段差が設けられており、その第1の支持部220A’の露出部に磁電変換素子330Aが設置される構成となっている。これにより、一次導体210に流れる電流により生じる磁束が、感磁面331に対して垂直方向に通過するように発生する。したがって、磁電変換素子330Aの感磁面331における磁束密度が高くなり、電流センサ300の測定感度が向上する。
より具体的には、段差の大きさが、磁電変換素子の厚みをt1、1次導体の厚みをt2とした時の、0より大きく2×t1+t2より小さい値であることが好ましい。特に、感磁面331の高さが一次導体210の厚み中心の高さと等しくなるように段差を設けると、磁電変換素子330Aの感磁面331における磁束密度が最も高くなり、電流センサ300の測定感度が向上する。
なお、支持部に段差を設ける手法としてはハーフエッジ加工に限られず、この他、コイニングにより押しつぶして機械的に薄くする方法や曲げ加工などの方法を適用することも可能である。
200 電流センサ
210 一次導体
210A 電流経路
210B 一次導体端子
210C 開口部
220 信号端子側部材
220A 支持部
220A’第1の支持部
220A” 第2の支持部
220B,220B_1,220B_2 リード端子
230 ICチップ
230A 磁電変換素子
330 ICチップ
330A 磁電変換素子
210 一次導体
210A 電流経路
210B 一次導体端子
210C 開口部
220 信号端子側部材
220A 支持部
220A’第1の支持部
220A” 第2の支持部
220B,220B_1,220B_2 リード端子
230 ICチップ
230A 磁電変換素子
330 ICチップ
330A 磁電変換素子
Claims (9)
- 被測定電流が流れるU字形の電流経路を有する一次導体と、
前記U字形の開口部に配置される、磁電変換素子を支持するための支持部と、
前記支持部に接続するリード端子と、を備え、
前記支持部は前記U字形の電流経路と電気的に接続しないことを特徴とする電流センサ用基板。 - 前記一次導体は、前記U字形の電流経路に接続する一次導体端子を有し、
前記一次導体端子は、前記電流経路の前記U字形の開口方向とは逆方向に延在しており、
前記リード端子は、前記一次導体端子が延在する方向とは逆方向に延在することを特徴とする電流センサ用基板。 - 前記電流センサ用基板の前記支持部は、前記U字形の前記開口部に配置された第1の支持部と、前記第1の支持部に隣接し、前記開口部に配置されていない第2の支持部とを有することを特徴とする請求項1又は2記載の電流センサ用基板。
- 請求項1から3のいずれか記載の電流センサ用基板と、
前記電流センサ用基板の前記支持部に配置された、前記電流センサ用基板の前記電流経路を流れる電流から生じる磁束を検出する磁電変換素子を有するICチップと
を備え、
前記磁電変換素子は、平面視において前記電流経路の前記U字形の内側に配置されていることを特徴とする電流センサ。 - 前記磁電変換素子は、前記電流経路の前記U字形のコーナー部に近接して配置されていることを特徴とする請求項4に記載の電流センサ。
- 請求項3記載の電流センサ用基板と、
前記電流センサ用基板の前記第1の支持部に配置された、前記電流センサ用基板の前記電流経路を流れる電流から生じる磁束を検出する磁電変換素子と、
前記電流センサ用基板の前記第2の支持部に配置された、前記磁電変換素子からの出力信号を処理するためのICチップと
を備え、
前記磁電変換素子は、平面視において前記電流経路の前記U字形の内側に配置された化合物半導体磁気センサであることを特徴とする電流センサ。 - 前記磁電変換素子は、ホール素子であることを特徴とする請求項4から6のいずれかに記載の電流センサ。
- 前記電流センサ用基板の前記支持部には段差が設けられており、前記磁電変換素子の感磁面は、前記一次導体の高さと略等しくなるように設けられていることを特徴とする請求項4から7のいずれかに記載の電流センサ。
- 前記電流センサ用基板の前記支持部には段差が設けられており、前記段差の大きさは、前記磁電変換素子の厚みをt1、前記1次導体の厚みをt2とした時の、0より大きく2×t1+t2より小さい値であり、前記段差は前記磁電変換素子の感磁面の高さを低くする方向の段差であることを特徴とする請求項4から7のいずれかに記載の電流センサ。
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