WO2012174949A1 - Dispositif semi-conducteur d'émission de lumière en ultraviolet profond - Google Patents

Dispositif semi-conducteur d'émission de lumière en ultraviolet profond Download PDF

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Publication number
WO2012174949A1
WO2012174949A1 PCT/CN2012/075070 CN2012075070W WO2012174949A1 WO 2012174949 A1 WO2012174949 A1 WO 2012174949A1 CN 2012075070 W CN2012075070 W CN 2012075070W WO 2012174949 A1 WO2012174949 A1 WO 2012174949A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
light
light emitting
semiconductor
emitting device
Prior art date
Application number
PCT/CN2012/075070
Other languages
English (en)
Chinese (zh)
Inventor
陈文欣
钟志白
梁兆煊
Original Assignee
厦门市三安光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 厦门市三安光电科技有限公司 filed Critical 厦门市三安光电科技有限公司
Priority to US13/624,937 priority Critical patent/US8860059B2/en
Publication of WO2012174949A1 publication Critical patent/WO2012174949A1/fr
Priority to US14/481,928 priority patent/US9318657B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Definitions

  • ultraviolet light emitting diodes have multiple layers of different material structures. The choice of material and thickness affects the wavelength of the LED. In order to improve the light extraction efficiency, these multilayer structures are selected with different chemical composition to promote the independent entry of photocarriers into the composite region (generally a quantum well).
  • the quantum well is doped with a donor atom to increase the concentration of electrons (N-type layer), and the other side is doped with a acceptor atom to increase the concentration of the void (P-type layer:).
  • the ultraviolet light emitting diode includes an electronic contact structure, and different electrode structures can be connected to the power source according to the properties of different devices, and the power source can supply current to the device through the contact structure.
  • the present invention provides a deep ultraviolet semiconductor light emitting device.
  • the light-emitting layer of the present invention produces light having a wavelength of from 100 nm to 315 nm.
  • the metal structure comprises: an ohmic metal contact layer and a bonding layer.
  • FIG. 3 is a schematic view showing the path of the light emitting direction of the semiconductor light emitting device of the present invention.
  • 4 to 9 are schematic cross-sectional views showing the manufacturing process of the semiconductor light-emitting device of the invention.
  • the metal structure 110 is composed of an ohmic metal contact layer 112 and a bonding layer 113.
  • the towel bonding layer 113 is composed of a conductive material having a resistivity of 1.0 X 10 -8 to 1.0 X 1 ( ⁇ 4 ⁇ , a melting point of 200 ° C or more;
  • the contact layer 112 is composed of a conductive material, the material The resistivity is between 1.0 X 10- 8 and 1.0 X 10" 4 ⁇ . ⁇ , and the material can be selected from Au, Ag, Cu, Al, Pt.
  • the light emitting device turns on an external current through the conductive path 202 of the substrate 200, and the light emitting layer 102 emits light under the excitation of current.
  • the direct light directly passes through the n-layer type 101, and is directly emitted through the surface light-increasing structure.
  • the reflected light passes through the micro-light channel 105 of the p-type semiconductor layer cover layer 104, and is reflected by the metal reflective layer 111 to be emitted to the light-emitting direction.
  • the absorption of ultraviolet light by the p-type semiconductor layer cap layer 104 is effectively reduced, and the light extraction efficiency is improved.
  • the microchannel 105 is prepared by a dry etching method, and the depth of the microchannel is between 10 and 500 nm; the reflective metal layer 111 is formed on the top surface of the p-type semiconductor cladding layer 104, and the metal is reflective.
  • NiAu is preferred as the layer material, and the thickness is between 50 and 1000 nm. It may also be made of an alloy including Al, Ag, Ni, Au, Cu, Pd and Rh, and the ohmic contact is achieved by high temperature annealing in a N 2 atmosphere.
  • the A1N single crystal substrate 120 for growing the epitaxial structure is subjected to chemical polishing removal treatment, and the n-type semiconductor contact layer 101 is exposed by chemical polishing thickness control, in the n-type semiconductor
  • An n-type ohmic contact metal layer is prepared on the surface of the body contact layer 101, and the material is preferably made of any alloy of Ti, Al, Au, or any alloy such as Ti, Al, Au, Ag, Rh, Co.
  • An ultraviolet antireflection layer is prepared on the exposed N-type semiconductor layer; an n-electrode pad is prepared on the n-type ohmic contact metal layer, and the material is preferably TiAu, and the thickness is between 1 and 20 ⁇ m.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne un dispositif semi-conducteur d'émission de lumière en ultraviolet profond, comprenant un substrat à dissipation de chaleur ayant un canal électroconducteur; une structure épitaxiale d'émission de lumière, formée d'une couche semi-conductrice de type n, une couche d'émission de lumière, d'une couche semi-conductrice de type n, en séquence, et ayant deux surfaces principales, qui sont une surface de sortie de lumière d'un côté et une surface non sortie de lumière de l'autre côté; une couche de recouvrement semi-conductrice ayant un canal de lumière faible et formée au côté surface non sortie de lumière de la structure épitaxiale d'émission de lumière. Une couche réfléchissante est formée sur la couche de recouvrement semi-conductrice. Le substrat est relié à la couche réfléchissante. Selon la présente invention, la structure épitaxiale d'émission de lumière est reliée au substrat à dissipation de chaleur ayant le canal électroconducteur, résolvant ainsi de façon efficace le problème de dissipation de chaleur de celui-ci. La couche de recouvrement, éloignée du côté surface de sortie de lumière, de la structure épitaxiale d'émission de lumière qui a le canal de faible lumière et, conjointement avec la couche réfléchissante, la plupart de la lumière produite par l'émetteur de lumière est délivrée en sortie par le côté structure support mécanique optique, de façon à empêcher le p-GaN de la couche de recouvremant d'absorber la lumière ultraviolette, augmentant ainsi l'efficacité de sortie de lumière.
PCT/CN2012/075070 2011-06-20 2012-05-04 Dispositif semi-conducteur d'émission de lumière en ultraviolet profond WO2012174949A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/624,937 US8860059B2 (en) 2011-06-20 2012-09-23 Light emitting devices, systems, and methods of manufacturing
US14/481,928 US9318657B2 (en) 2011-06-20 2014-09-10 Light emitting devices, systems, and methods of manufacturing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201110165297.3 2011-06-20
CN2011101652973A CN102222760B (zh) 2011-06-20 2011-06-20 一种深紫外半导体发光器件

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2012/075071 Continuation WO2012174950A1 (fr) 2011-06-20 2012-05-04 Dispositif semi-conducteur électroluminescent émettant dans l'ultraviolet profond et son procédé de fabrication

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/624,937 Continuation US8860059B2 (en) 2011-06-20 2012-09-23 Light emitting devices, systems, and methods of manufacturing

Publications (1)

Publication Number Publication Date
WO2012174949A1 true WO2012174949A1 (fr) 2012-12-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2012/075070 WO2012174949A1 (fr) 2011-06-20 2012-05-04 Dispositif semi-conducteur d'émission de lumière en ultraviolet profond

Country Status (2)

Country Link
CN (1) CN102222760B (fr)
WO (1) WO2012174949A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112951957A (zh) * 2021-03-21 2021-06-11 南通大学 一种耦合量子阱结构深紫外AlGaN基发光二极管

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102222760B (zh) * 2011-06-20 2013-05-15 厦门市三安光电科技有限公司 一种深紫外半导体发光器件
TWI591848B (zh) 2013-11-28 2017-07-11 晶元光電股份有限公司 發光元件及其製造方法
CN104701435A (zh) * 2013-12-06 2015-06-10 晶元光电股份有限公司 发光元件及其制造方法
US10236413B2 (en) 2015-04-20 2019-03-19 Epistar Corporation Light-emitting device and manufacturing method thereof
CN107611233B (zh) * 2017-08-24 2019-05-03 西安交通大学 基于复合转移衬底的垂直结构深紫外led器件及其制备方法

Citations (6)

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Publication number Priority date Publication date Assignee Title
TW495999B (en) * 2001-03-26 2002-07-21 Jang Guo Ying Structure and manufacturing method of micro-channel LED
US20070085101A1 (en) * 2005-10-19 2007-04-19 Lg Innotek Co., Ltd. Light emitting diode package
CN101521252A (zh) * 2008-09-26 2009-09-02 钜亨电子材料元件有限公司 具有导电导热基板的发光二极管制造方法及其结构
CN101656286A (zh) * 2008-08-18 2010-02-24 台湾积体电路制造股份有限公司 发光二极管与其制造方法
CN101673794A (zh) * 2008-09-12 2010-03-17 日立电线株式会社 发光元件
CN102222760A (zh) * 2011-06-20 2011-10-19 厦门市三安光电科技有限公司 一种深紫外半导体发光器件

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JP3152708B2 (ja) * 1991-12-12 2001-04-03 株式会社東芝 半導体発光素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW495999B (en) * 2001-03-26 2002-07-21 Jang Guo Ying Structure and manufacturing method of micro-channel LED
US20070085101A1 (en) * 2005-10-19 2007-04-19 Lg Innotek Co., Ltd. Light emitting diode package
CN101656286A (zh) * 2008-08-18 2010-02-24 台湾积体电路制造股份有限公司 发光二极管与其制造方法
CN101673794A (zh) * 2008-09-12 2010-03-17 日立电线株式会社 发光元件
CN101521252A (zh) * 2008-09-26 2009-09-02 钜亨电子材料元件有限公司 具有导电导热基板的发光二极管制造方法及其结构
CN102222760A (zh) * 2011-06-20 2011-10-19 厦门市三安光电科技有限公司 一种深紫外半导体发光器件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112951957A (zh) * 2021-03-21 2021-06-11 南通大学 一种耦合量子阱结构深紫外AlGaN基发光二极管

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CN102222760B (zh) 2013-05-15
CN102222760A (zh) 2011-10-19

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