WO2012172910A1 - Method and device for producing wafer - Google Patents

Method and device for producing wafer Download PDF

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Publication number
WO2012172910A1
WO2012172910A1 PCT/JP2012/062518 JP2012062518W WO2012172910A1 WO 2012172910 A1 WO2012172910 A1 WO 2012172910A1 JP 2012062518 W JP2012062518 W JP 2012062518W WO 2012172910 A1 WO2012172910 A1 WO 2012172910A1
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WO
WIPO (PCT)
Prior art keywords
wafer
wafers
support base
adhesive
separated
Prior art date
Application number
PCT/JP2012/062518
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French (fr)
Japanese (ja)
Inventor
政志 栢橋
英明 八坂
瓜生 博一
Original Assignee
株式会社新菱
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Publication of WO2012172910A1 publication Critical patent/WO2012172910A1/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

Definitions

  • the present invention relates to a method and apparatus for manufacturing a wafer formed by slicing an ingot.
  • a wafer is formed by slicing an ingot attached to a support base with an adhesive into a thin strip shape with a wire saw.
  • the wafer immediately after slicing is first cleaned in a rough cleaning process.
  • the wafer is sliced in a strip shape and dipped in the cleaning tank while being hung on the support table, and the sliced powder, abrasive grains, coolant, and the like attached to the wafer surface are cleaned and removed.
  • the wafer is transferred to the peeling dip tank together with the support, immersed in the chemical solution in the peel tub, and heated.
  • the adhesive is melted, the wafer is peeled off from the support base, and freely falls to the bottom of the peeling immersion tank.
  • the dropped wafer is manually picked up from the bottom of the peeling tank and then inserted into the temporary cassette, etc., in the correct orientation, and the posture is held, or the temporary cassette received at the time of dropping is inserted in advance. There is also.
  • the wafers stored in the temporary cassette are taken out one by one by hand or by a separation / extraction mechanism, separated one by one into the cleaning cassette, and sent to the finish cleaning process.
  • Patent Document 1 a wafer attached to a support base by an adhesive is cleaned in a state of being accommodated in a first cassette, and the cleaned wafer is peeled off from the support base. It is described that the wafer peeled off is supported on a holding rod in a state where it is held so as not to fall down by both regulating plates provided in the first cassette. Further, the support base peeled off from the wafer is taken out from the first cassette by a known manipulator or robot, and the wafer peeled off from the support base is supported in such a manner that its axis is horizontal while being accommodated in the first cassette. It is described that it is supported on a table and separated one by one and accommodated in a second cassette.
  • the wafer sliced by the fixed abrasive wire since the wafer sliced by the fixed abrasive wire has high surface smoothness, it is supported on the support base so that the axis of the wafer becomes horizontal by peeling from the support base as described in Patent Document 1.
  • the peeled wafers are affected by the saw marks, and the wafers are firmly adhered to each other. The more closely the wafers are cleaned, the more the wafers adhere to each other. As a result, it becomes difficult to separate the wafers one by one, leading to a decrease in yield.
  • an object of the present invention is to provide a wafer manufacturing method and a manufacturing apparatus in which wafers formed by slicing an ingot are separated one by one and the front and back surfaces of the wafer can be easily and uniformly cleaned.
  • wafers formed by slicing in a strip shape including an ingot attached to a support table with an adhesive up to a part of the support table are separated one by one at the support table.
  • the front and back surfaces of the separated wafers are washed one by one, and the wafer is immersed in a peeling tank to peel off the support piece and the adhesive from the wafer.
  • the wafer manufacturing apparatus of the present invention separates wafers formed by slicing in a strip shape including an ingot attached to a support table with an adhesive up to a part of the support table one by one at the support table.
  • the apparatus includes a separation device, a cleaning device that cleans the front and back surfaces of the separated wafers one by one, and a separation tank that immerses the wafer and separates the piece of the support and the adhesive from the wafer.
  • wafers formed by slicing into strips are not roughly washed while hanging from the support table, but are separated one by one at the support table, and the front and back surfaces of the separated wafer are separated. Since the wafers are cleaned one by one, the front and back surfaces of the wafer can be easily and uniformly cleaned regardless of the gap between the wafers and the size of the wafers when they are sliced into strips and hung on the support base. In addition, since the piece of the support base and the adhesive when separated are still attached to the cleaned wafer, the wafer is immersed in a peeling tank to peel the piece of the support base and the adhesive from the wafer. This can be removed.
  • the wafer manufacturing method of the present invention includes storing wafers, which have been cleaned one by one, in a cassette, and immersing the cassette in which the wafers are stored in a peeling tank, so that the wafer can be removed from the support table. It is desirable to peel the section and adhesive.
  • the wafer manufacturing apparatus of the present invention includes a wafer stuffing device that accommodates wafers that have been cleaned one by one in a cassette, and the separation tank immerses the cassette containing the wafer in the separation tank, thereby It is desirable that the support section and the adhesive are peeled off.
  • the wafers separated one by one at the support base part are cleaned one by one after being washed one by one, and then stored in a cassette and immersed in a peeling tank to separate the wafers one by one. Can be prevented from contacting in the subsequent process, and the section of the support base and the adhesive can be peeled off from the plurality of wafers after cleaning.
  • the wafer manufacturing method of the present invention is a wafer formed by slicing in a strip shape including the ingot attached to the support table with an adhesive up to a part of the support table, in a state immersed in water, It is desirable to separate them one by one at the support base. Thereby, it is possible to prevent the front and back surfaces from drying while separating the wafers sliced into strips one by one.
  • a wafer formed by slicing a strip including an ingot attached to a support base with an adhesive up to a part of the support base is separated one by one at the support base, and the separated wafer
  • Each of the wafers formed by slicing the ingot is separated one by one by cleaning the front and back surfaces of the wafer one by one, immersing the wafer in a peeling tank, and peeling the support piece and the adhesive from the wafer.
  • the separating structure can prevent the front and back surfaces from drying while separating the wafers formed by slicing into strips one by one.
  • the front and back surfaces of the wafers can be cleaned one by one without drying abrasive grains, coolant, and the like.
  • FIG. 3 is a plan view of FIG. 2.
  • FIG. 3 is a left side view of FIG. 2.
  • FIG. 1 is a schematic configuration diagram showing a part of a wafer manufacturing apparatus according to an embodiment of the present invention.
  • a wafer manufacturing apparatus 1 includes a separation apparatus 2 that separates wafers W formed by slicing an ingot S made of single crystal silicon into strips by a slicing machine M 1 one by one. And a cleaning device 3 for cleaning the separated wafers W one by one, a wafer stuffing device 4 for storing the cleaned wafers W in a cassette, and a separation for peeling off carbon etc. remaining on the separated wafers W It has a tank 5 and a cleaning tank group 6 for performing additional cleaning of the wafer W.
  • Ingot S is the support base C (see FIG. 6.) Made of carbon steel plate supported by a support plate P via, it is sliced in a strip shape by slicing machine M 1. The ingot S is adhered to the support base C with an adhesive (not shown), is sliced into a strip shape including part of the support base C, and the wafer W remains suspended from the support base C. , taken out from the slice machine M 1 by the slice unloader M 2, it is set to the separator 2.
  • the separation apparatus 2 includes a holder 20 that holds the sliced wafer W in a state of being suspended from the support base C, and a state in which the wafer W held by the holder 20 is immersed in water. And a separation hand 22 for separating the wafers W one by one.
  • the separation hand 22 includes a suction pad 23 that sucks the wafer W, a substantially L-shaped rotation arm 24 that rotates the suction pad 23, a support base 25 that rotatably supports the rotation arm 24, and a separation hand.
  • the support base 25 is held by the forward / reverse actuator 26, and the forward / backward actuator 26 is held by the pitch feed actuator 27.
  • the turning actuator 28 turns the separation hand 22 by turning the turning arm 24. That is, the separation hand 22 is in a direction perpendicular to the suction surface of the wafer W (the left side surface in FIG. 2 and the front surface in FIG. 4) (the left-right direction in FIGS. 2 and 3) and parallel to the suction surface of the wafer W. 3 can be moved in the front-rear direction (vertical direction in FIG. 3 and left-right direction in FIG. 4), and can be rotated upward (see FIG. 2) with the wafer W adsorbed.
  • the cleaning device 3 includes a conveyor device 30 that transports the wafers W one by one, and shower devices 31 a and 31 b arranged above and below the conveyor device 30. As shown in FIG. 2, the conveyor device 30 is configured to move forward and backward toward the lower side of the wafer W attracted to the separation hand 22 by a conveyor forward / backward actuator 32. When the wafer W placed on the conveyor device 30 from the separation hand 22 is transported to the wafer filling device 4 by the conveyor device 30, the cleaning water is sprayed from the shower devices 31 a and 31 b to the front and back surfaces of the wafer W. Wash one by one.
  • the forward / backward actuator 26, the pitch feed actuator 27, the rotation actuator 28, and the conveyor forward / backward actuator 32 are operated, and the separation hand 22 and the conveyor device 30 are put on standby at the start position (step S101).
  • the separation hand 22 is disposed at the rear position (see FIG. 4) of the wafer W on the leftmost side (the conveyor device 30 side described later) in FIGS. 2 and 3, and the conveyor device 30 is indicated by a solid line in FIG.
  • the separation hand 22 is disposed at a position that does not interfere with the turning operation.
  • step S102 the rotation arm 24 is slightly rotated downward by the rotation actuator 28 so that the suction surface of the suction pad 23 of the separation hand 22 is parallel to the suction surface of the wafer W.
  • step S104 One of the wafers W is sucked.
  • step S105 when the rotation arm 24 is rotated to the upper intermediate position by the rotation actuator 28, the wafer W is separated at the portion of the support base C (step S105).
  • step S106 the separation hand 22 is moved backward by the forward / reverse actuator 26 with the wafer W adsorbed (step S106), and the separation hand 22 is rotated to a position above the conveyor device 30 by the rotation actuator 28 (step S107). .
  • the conveyor device 30 is advanced by the conveyor forward / reverse actuator 32 to a receiving position below the wafer W attracted by the separation hand 22 (step S108).
  • the wafer W sucked on the suction pad 23 is released, placed on the conveyor device 30, and conveyed by the conveyor device 30 (step S109).
  • the front and back surfaces of the wafers W are cleaned one by one with the cleaning water sprayed from the shower devices 31 a and 31 b while being transferred by the conveyor device 30.
  • step S110 the conveyor device 30 is moved backward to the standby position by the conveyor forward / reverse actuator 32 (step S110). Thereafter, the separation hand 22 is rotated downward by the rotation actuator 28 (step S111). Then, the separation hand 22 is pitch-fed to the position of the next wafer W by the pitch feed actuator 27 (step S112), and the process returns to step S102 to repeatedly perform the wafer W separation operation.
  • the wafer stuffing device 4 stores the wafers W after cleaning, which are conveyed one by one by the conveyor device 30, one by one in the cassette 40. Each time the wafer W is accommodated one by one, the cassette 40 is gradually lowered into the water tank 41 and immersed in the water in the water tank 41. The cassette 40 in which the wafer W has been accommodated is transferred to the peeling tank 5 by the cassette transfer machine 7.
  • the section of the support table C and the adhesive interposed between the support table C and the wafer W are peeled from the wafer W separated at the support table C by the separation hand 22.
  • the support base C is a carbon plate
  • the wafer W and the cassette 40 are immersed in a chemical capable of peeling off the carbon and the adhesive, whereby the carbon and the like are peeled off from the wafer W.
  • the cassette 40 from which carbon or the like has been peeled is sequentially transported through the cleaning tank group 6 by the cassette transporter 8 and is subjected to additional cleaning.
  • the wafer W formed by slicing in a strip shape including the ingot S adhered to the support base C with an adhesive up to a part of the support base C is supported as in the past.
  • the support table C is separated one by one by the separation device 2, and the front and back surfaces of the separated wafers W are washed one by one by the cleaning device 3. . Therefore, in this wafer manufacturing apparatus 1, the front and back surfaces of the wafer W can be easily and easily formed regardless of the gap (pitch) between the wafers W and the size of the wafers W when they are sliced into strips and hung on the support base C. Cleaning can be performed uniformly, and a high-quality wafer can be stably obtained.
  • the separation device 2 the wafer W is attracted to the suction pad 23, by integrating the wafer W and the suction pad 23 to enhance the rigidity, the cutting of the support C by slicing machines M 1
  • the support base C satisfies the condition that the strength of the support base C ⁇ (suction pad 23 + wafer W).
  • a carbon plate is used, but a resin plate, an alumina plate, or the like is used. It is also possible to use.
  • the wafers W held by the holder 20 are adsorbed and separated by the separation hand 22 in a state of being immersed in water by the water tank 21, so that the wafers W are separated from the support base C one by one. While separating, it is possible to prevent the front and back surfaces from drying, and the cleaning device 3 does not dry the slicing powder, abrasive grains, coolant, etc. adhering to the surface of the wafer W by slicing. The front and back surfaces can be cleaned one by one.
  • the wafers W As for the cleaned wafers W, the wafers W, which have been cleaned one by one, are stored in the cassette 40 by the wafer filling device 4, and the cassette 40 is gradually stored in the water tank 41 each time the wafers W are stored one by one. It is lowered and immersed in the water in the water tank 41, and the carbon and the like in the next peeling tank 5 are peeled off without drying the front and back surfaces of the wafer W while the wafers W are stored one by one. It is possible to do.
  • the cassette 40 in which the wafer W is accommodated is immersed in the peeling tank 5, the section of the support base C and the adhesive are peeled off from the wafer W.
  • the wafers W separated from each other do not come into contact with each other in the subsequent process, and it is possible to prevent quality deterioration due to poor handling of the wafers W and to improve the yield.
  • the separation hand 22 is movable in the front-rear direction within a plane parallel to the suction surface of the wafer W, but is not limited to the front-rear direction. In short, it is only necessary that the separation hand 22 can be moved in the advancing and retracting direction within a plane parallel to the suction surface of the wafer W with respect to the holder 20.
  • the separation hand 22 sucks and rotates the wafer W one by one, but the wafer W is separated by a method other than the folding. It is also possible. Examples of other separation means include those shown in FIGS.
  • FIG. 6 shows a configuration for cutting with an ultrasonic cutter.
  • the ultrasonic cutter 50 in a state where the suction surface (front side of FIG. 6A) of the wafer W suspended from the support C is sucked by the separation hand 22 (not shown).
  • the separation hand 22 not shown.
  • the tip of the cutter blade 50a of the ultrasonic cutter 50 is moved in contact with the portion of the support base C that supports the wafer W, and the portion of the support base C is cut. .
  • the wafers W are separated one by one while being attracted to the separation hand 22.
  • the section of the support base C and the adhesive remaining on the wafer W are separated by the release layer 5 as described above.
  • FIG. 7 shows a configuration for cutting with a high-speed water jet.
  • the high-pressure water nozzle gun 51 is in a state where the suction surface (front side of FIG. 6A) of the wafer W hung from the support table C is sucked by the separation hand 22 (not shown).
  • the high pressure water 51a is ejected from the water and cut and separated one by one.
  • the tip of the high-pressure water 51a sprayed from the high-pressure water nozzle gun 51 is moved in contact with the portion of the support base C that supports the wafer W, and the portion of the support base C is moved. Disconnect. Thereby, the wafers W are separated one by one while being attracted to the separation hand 22.
  • FIG. 8 shows a configuration for cutting with laser light.
  • the laser irradiation head 52 is in a state where the suction surface (front side of FIG. 6A) of the wafer W hung from the support table C is sucked by the separation hand 22 (not shown). Are cut and separated one by one by irradiating them with a laser beam.
  • the tip of the laser beam 52a irradiated from the laser irradiation head 52 is moved in contact with the portion of the support base C that supports the wafer W, and the portion of the support base C is moved. Disconnect. Thereby, the wafers W are separated one by one while being attracted to the separation hand 22.
  • FIG. 9 shows a configuration for cutting with a wire saw.
  • the wafer W suspended by the support base C is attracted by the wire saw 53 while being attracted by the separation hand 22 (not shown). Cut and separate one by one.
  • the fixed abrasive wire 53a of the wire saw 53 is brought into contact with the portion of the support base C that supports the wafer W, and is reciprocated along the suction surface of the wafer W to support it. The part of the base C is cut. Thereby, the wafers W are separated one by one while being attracted to the separation hand 22.
  • FIG. 10 shows a configuration for cutting with a band saw.
  • the band saw 54 is in a state where the suction surface (front side of FIG. 5A) of the wafer W hung on the support base C is sucked by the separation hand 22 (not shown). To cut and separate one by one.
  • the saw blade 54a of the band saw 54 is brought into contact with the portion of the support base C that supports the wafer W, and is reciprocated along the suction surface of the wafer W. A portion of the support base C is cut. Thereby, the wafers W are separated one by one while being attracted to the separation hand 22.
  • FIG. 11 shows a configuration for cutting with a circular saw.
  • the circular saw 55 is shown in a state where the suction surface (front side of FIG. 6A) of the wafer W hung on the support table C is sucked by the separation hand 22 (not shown).
  • the separation hand 22 not shown.
  • the rotary cutter 55a of the circular saw 55 is brought into contact with the portion of the support table C that supports the wafer W, and is moved along the suction surface of the wafer W, thereby supporting the support table. Cut part C.
  • the wafers W are separated one by one while being attracted to the separation hand 22.
  • the same configuration is used when cutting with a dicing saw or grinder.
  • the wafer manufacturing method and manufacturing apparatus of the present invention are useful as a method and apparatus for manufacturing a wafer by separating and cleaning wafers formed by slicing an ingot one by one.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Provided are a method and a device for producing wafers, with which it is possible to separate, one by one, wafers that are formed by slicing an ingot and to easily and uniformly clean the front and back surfaces of the wafers. Wafers (W) are formed by slicing an ingot, which is bonded to a support base with an adhesive, into rectangular slices that include a portion of the support base, and the wafers (W) are separated one by one at the portion of the support base by a separation device (2). The front and back surfaces of the separated wafers (W) are cleaned one by one by a cleaning device (3), and the wafers (W) are immersed in a stripping tank (5), whereby the cut pieces of the support base and the adhesive are stripped from the wafers (W).

Description

ウエハの製造方法および製造装置Wafer manufacturing method and manufacturing apparatus
 本発明は、インゴットをスライスして形成されるウエハの製造方法および製造装置に関する。 The present invention relates to a method and apparatus for manufacturing a wafer formed by slicing an ingot.
 一般的に、ウエハは、支持台に接着剤により貼着されたインゴットをワイヤソーにより薄く短冊状にスライスして形成される。スライス直後のウエハは、まず粗洗浄工程にて洗浄される。粗洗浄工程では、ウエハは短冊状にスライスされて支持台にぶら下がった状態のまま、洗浄槽内に浸漬され、ウエハ表面に付着したスライス粉、砥粒やクーラント等が洗浄除去される。 Generally, a wafer is formed by slicing an ingot attached to a support base with an adhesive into a thin strip shape with a wire saw. The wafer immediately after slicing is first cleaned in a rough cleaning process. In the rough cleaning step, the wafer is sliced in a strip shape and dipped in the cleaning tank while being hung on the support table, and the sliced powder, abrasive grains, coolant, and the like attached to the wafer surface are cleaned and removed.
 次に、ウエハは支持台とともに剥離用浸漬槽に移載され、剥離槽内の薬液に浸漬され、加熱される。これにより、接着剤が溶け、ウエハは支持台から剥離し、剥離用浸漬槽の底部に自由落下する。落下後のウエハは、人手にて剥離槽の底部から拾い上げられた後、仮カセット等に方向を合わせて挿入され、姿勢保持が行われるか、落下時に受け取る仮カセット等が事前に投入されることもある。そして、仮カセットに収納されたウエハは、人手または分離取出機構にて1枚ずつ取り出され、洗浄用カセットへ1枚ずつ分離して収納され、仕上洗浄工程に送られる。 Next, the wafer is transferred to the peeling dip tank together with the support, immersed in the chemical solution in the peel tub, and heated. As a result, the adhesive is melted, the wafer is peeled off from the support base, and freely falls to the bottom of the peeling immersion tank. The dropped wafer is manually picked up from the bottom of the peeling tank and then inserted into the temporary cassette, etc., in the correct orientation, and the posture is held, or the temporary cassette received at the time of dropping is inserted in advance. There is also. Then, the wafers stored in the temporary cassette are taken out one by one by hand or by a separation / extraction mechanism, separated one by one into the cleaning cassette, and sent to the finish cleaning process.
 また、例えば特許文献1には、接着剤によって支持台に貼着されたウエハを第1カセット内に収容した状態で洗浄し、洗浄されたウエハを支持台から剥離させるが、このとき、支持台から剥離させたウエハは、第1カセット内に設けた両規制板によって倒伏しないように保持した状態で、保持ロッド上に支持することが記載されている。また、ウエハから剥離された支持台は公知のマニピュレータまたはロボットによって第1カセットから取り出し、支持台から剥離されたウエハは第1カセットに収容したままの状態で、その軸線が水平となるように支持台上に支持し、1枚ずつ分離して第2カセットに収容することが記載されている。 Further, for example, in Patent Document 1, a wafer attached to a support base by an adhesive is cleaned in a state of being accommodated in a first cassette, and the cleaned wafer is peeled off from the support base. It is described that the wafer peeled off is supported on a holding rod in a state where it is held so as not to fall down by both regulating plates provided in the first cassette. Further, the support base peeled off from the wafer is taken out from the first cassette by a known manipulator or robot, and the wafer peeled off from the support base is supported in such a manner that its axis is horizontal while being accommodated in the first cassette. It is described that it is supported on a table and separated one by one and accommodated in a second cassette.
特許第3377161号公報Japanese Patent No. 3377161
 ところで、昨今、ウエハの薄肉化への取り組みや固定砥粒スライス技術の導入が進んでおり、ワイヤソーのワイヤ径も細くなり、短冊状にスライスされて支持台にぶら下がった状態でのウエハ間の隙間は0.14mm程度にまで少なくなっている。一方で、ウエハの大きさは125~155mm程度と長大であるため、従来のようにウエハが支持台にぶら下がったままの状態では、ウエハ間の隙間の洗浄は困難を極め、多大な時間と労力を要する割には品質が安定しないという問題がある。 Nowadays, efforts to reduce the thickness of wafers and the introduction of fixed abrasive slicing technology are progressing, and the wire diameter of the wire saw has become thinner, and the gap between wafers in the state of being sliced into strips and hanging on a support base Is reduced to about 0.14 mm. On the other hand, since the size of the wafer is as large as about 125 to 155 mm, it is extremely difficult to clean the gap between the wafers in the state where the wafer is hanging on the support base as in the past, and it takes a lot of time and labor. However, there is a problem that the quality is not stable despite the need for.
 また、固定砥粒ワイヤによりスライスされたウエハは、表面の平滑性が高いことから、特許文献1に記載のように支持台から剥離してウエハの軸線が水平となるように支持台上に支持した際に、剥離したウエハがソーマークの影響を受けて、ウエハ同士が強固に密着する。このウエハ同士の密着は、ウエハを洗浄すればするほど、ウエハ表面の凹凸が無くなって、より強力に発生することになる。その結果、このウエハを1枚ずつ分離することが困難となり、歩留まり低下を招く。 Further, since the wafer sliced by the fixed abrasive wire has high surface smoothness, it is supported on the support base so that the axis of the wafer becomes horizontal by peeling from the support base as described in Patent Document 1. In this case, the peeled wafers are affected by the saw marks, and the wafers are firmly adhered to each other. The more closely the wafers are cleaned, the more the wafers adhere to each other. As a result, it becomes difficult to separate the wafers one by one, leading to a decrease in yield.
 そこで、本発明においては、インゴットをスライスして形成されるウエハを1枚ずつ分離して、ウエハの表裏面を容易かつ均一に洗浄可能としたウエハの製造方法および製造装置を提供することを目的とする。 SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a wafer manufacturing method and a manufacturing apparatus in which wafers formed by slicing an ingot are separated one by one and the front and back surfaces of the wafer can be easily and uniformly cleaned. And
 本発明のウエハの製造方法は、支持台に接着剤により貼着されたインゴットを支持台の一部まで含めて短冊状にスライスして形成されたウエハを支持台の部分で1枚ずつ分離すること、この分離されたウエハの表裏面を1枚ずつ洗浄すること、ウエハを剥離槽内に浸漬して、ウエハから支持台の切片および接着剤を剥離することを含むことを特徴とする。 In the wafer manufacturing method of the present invention, wafers formed by slicing in a strip shape including an ingot attached to a support table with an adhesive up to a part of the support table are separated one by one at the support table. In addition, the front and back surfaces of the separated wafers are washed one by one, and the wafer is immersed in a peeling tank to peel off the support piece and the adhesive from the wafer.
 本発明のウエハの製造装置は、支持台に接着剤により貼着されたインゴットを支持台の一部まで含めて短冊状にスライスして形成されたウエハを支持台の部分で1枚ずつ分離する分離装置と、この分離されたウエハの表裏面を1枚ずつ洗浄する洗浄装置と、ウエハを浸漬して、ウエハから支持台の切片および接着剤を剥離する剥離槽とを含むものである。 The wafer manufacturing apparatus of the present invention separates wafers formed by slicing in a strip shape including an ingot attached to a support table with an adhesive up to a part of the support table one by one at the support table. The apparatus includes a separation device, a cleaning device that cleans the front and back surfaces of the separated wafers one by one, and a separation tank that immerses the wafer and separates the piece of the support and the adhesive from the wafer.
 本発明では、短冊状にスライスして形成されたウエハを、支持台にぶら下がった状態のまま粗洗浄するのではなく、支持台の部分で1枚ずつ分離し、この分離されたウエハの表裏面を1枚ずつ洗浄するので、短冊状にスライスされて支持台にぶら下がった状態でのウエハ間の隙間およびウエハの大きさに関係なく、ウエハの表裏面を容易かつ均一に洗浄することができる。また、洗浄後のウエハには分離した際の支持台の切片および接着剤が付着したままであるため、このウエハを剥離槽内に浸漬して、ウエハから支持台の切片および接着剤を剥離することにより、除去することができる。 In the present invention, wafers formed by slicing into strips are not roughly washed while hanging from the support table, but are separated one by one at the support table, and the front and back surfaces of the separated wafer are separated. Since the wafers are cleaned one by one, the front and back surfaces of the wafer can be easily and uniformly cleaned regardless of the gap between the wafers and the size of the wafers when they are sliced into strips and hung on the support base. In addition, since the piece of the support base and the adhesive when separated are still attached to the cleaned wafer, the wafer is immersed in a peeling tank to peel the piece of the support base and the adhesive from the wafer. This can be removed.
 ここで、本発明のウエハの製造方法は、1枚ずつ洗浄されたウエハをカセットに収容することを含み、このウエハが収容されたカセットを剥離槽内に浸漬することにより、ウエハから支持台の切片および接着剤を剥離することが望ましい。また、本発明のウエハの製造装置は、1枚ずつ洗浄されたウエハをカセットに収容するウエハ詰め込み装置を含み、剥離槽は、ウエハが収容されたカセットを剥離槽内に浸漬することにより、ウエハから支持台の切片および接着剤を剥離するものであることが望ましい。これにより、支持台部分で1枚ずつ分離し、この分離されたウエハの表裏面を1枚ずつ洗浄した後、カセットに収容して剥離槽内に浸漬することで、1枚ずつ分離したウエハ同士が後工程で接触することがなくなるとともに、洗浄後の複数枚のウエハからそれぞれ支持台の切片および接着剤をまとめて剥離することができる。 Here, the wafer manufacturing method of the present invention includes storing wafers, which have been cleaned one by one, in a cassette, and immersing the cassette in which the wafers are stored in a peeling tank, so that the wafer can be removed from the support table. It is desirable to peel the section and adhesive. In addition, the wafer manufacturing apparatus of the present invention includes a wafer stuffing device that accommodates wafers that have been cleaned one by one in a cassette, and the separation tank immerses the cassette containing the wafer in the separation tank, thereby It is desirable that the support section and the adhesive are peeled off. As a result, the wafers separated one by one at the support base part are cleaned one by one after being washed one by one, and then stored in a cassette and immersed in a peeling tank to separate the wafers one by one. Can be prevented from contacting in the subsequent process, and the section of the support base and the adhesive can be peeled off from the plurality of wafers after cleaning.
 また、本発明のウエハの製造方法は、支持台に接着剤により貼着されたインゴットを支持台の一部まで含めて短冊状にスライスして形成されたウエハは、水中に浸漬した状態で、支持台の部分で1枚ずつ分離することが望ましい。これにより、短冊状にスライスして形成されたウエハを1枚ずつ分離している間に、その表裏面が乾燥するのを防止することができる。 Further, the wafer manufacturing method of the present invention is a wafer formed by slicing in a strip shape including the ingot attached to the support table with an adhesive up to a part of the support table, in a state immersed in water, It is desirable to separate them one by one at the support base. Thereby, it is possible to prevent the front and back surfaces from drying while separating the wafers sliced into strips one by one.
(1)支持台に接着剤により貼着されたインゴットを支持台の一部まで含めて短冊状にスライスして形成されたウエハを支持台の部分で1枚ずつ分離し、この分離されたウエハの表裏面を1枚ずつ洗浄し、ウエハを剥離槽内に浸漬して、ウエハから支持台の切片および接着剤を剥離する構成により、インゴットをスライスして形成されるウエハを1枚ずつ分離して、ウエハの表裏面を容易かつ均一に洗浄することができ、高品質なウエハを安定的に得ることが可能となる。 (1) A wafer formed by slicing a strip including an ingot attached to a support base with an adhesive up to a part of the support base is separated one by one at the support base, and the separated wafer Each of the wafers formed by slicing the ingot is separated one by one by cleaning the front and back surfaces of the wafer one by one, immersing the wafer in a peeling tank, and peeling the support piece and the adhesive from the wafer. Thus, the front and back surfaces of the wafer can be easily and uniformly cleaned, and a high-quality wafer can be stably obtained.
(2)1枚ずつ洗浄されたウエハをカセットに収容し、このウエハが収容されたカセットを剥離槽内に浸漬して、ウエハから支持台の切片および接着剤を剥離する構成により、1枚ずつ分離したウエハ同士が後工程で接触することがなく、ウエハの取り扱い不良による品質低下を防止することができ、歩留まりを向上させることが可能となる。 (2) The wafers that have been cleaned one by one are stored in a cassette, and the cassette in which the wafers are stored is immersed in a peeling tank to separate the support section and the adhesive from the wafer one by one. The separated wafers do not come into contact with each other in the subsequent process, and it is possible to prevent quality deterioration due to poor handling of the wafers and to improve the yield.
(3)支持台に接着剤により貼着されたインゴットを支持台の一部まで含めて短冊状にスライスして形成されたウエハは、水中に浸漬した状態で、支持台の部分で1枚ずつ分離する構成により、短冊状にスライスして形成されたウエハを1枚ずつ分離している間に、その表裏面が乾燥するのを防止することができるので、スライスによりウエハ表面に付着したスライス粉、砥粒やクーラント等を乾燥させることなく、ウエハ1枚ずつ表裏面を洗浄することが可能となる。 (3) Wafers formed by slicing in a strip shape including the ingot attached to the support base with an adhesive up to a part of the support base, one by one at the support base in a state immersed in water The separating structure can prevent the front and back surfaces from drying while separating the wafers formed by slicing into strips one by one. The front and back surfaces of the wafers can be cleaned one by one without drying abrasive grains, coolant, and the like.
本発明の実施の形態におけるウエハ製造装置の一部を示す概略構成図である。It is a schematic block diagram which shows a part of wafer manufacturing apparatus in embodiment of this invention. 図1の分離装置の概略構成図である。It is a schematic block diagram of the separation apparatus of FIG. 図2の平面図である。FIG. 3 is a plan view of FIG. 2. 図2の左側面図である。FIG. 3 is a left side view of FIG. 2. 分離装置の動作フロー図である。It is an operation | movement flowchart of a separation apparatus. 超音波カッターにより切断する構成を示す説明図である。It is explanatory drawing which shows the structure cut | disconnected by an ultrasonic cutter. 高速ウォータージェットにより切断する構成を示す説明図である。It is explanatory drawing which shows the structure cut | disconnected by a high-speed water jet. レーザ光により切断する構成を示す説明図である。It is explanatory drawing which shows the structure cut | disconnected by a laser beam. ワイヤソーにより切断する構成を示す説明図である。It is explanatory drawing which shows the structure cut | disconnected by a wire saw. 帯のこにより切断する構成を示す説明図である。It is explanatory drawing which shows the structure cut | disconnected by a band saw. 丸のこにより切断する構成を示す説明図である。It is explanatory drawing which shows the structure cut | disconnected by a circular saw.
 図1は本発明の実施の形態におけるウエハ製造装置の一部を示す概略構成図である。図1において、本発明の実施の形態におけるウエハ製造装置1は、単結晶シリコンからなるインゴットSがスライスマシンM1によって短冊状にスライスされて形成されたウエハWを1枚ずつ分離する分離装置2と、分離されたウエハWを1枚ずつ洗浄する洗浄装置3と、洗浄されたウエハWをカセットに収容するウエハ詰め込み装置4と、1枚ずつ分離したウエハWに残ったカーボン等を剥離する剥離槽5と、ウエハWの追加洗浄を行う洗浄槽群6とを有する。 FIG. 1 is a schematic configuration diagram showing a part of a wafer manufacturing apparatus according to an embodiment of the present invention. Referring to FIG. 1, a wafer manufacturing apparatus 1 according to an embodiment of the present invention includes a separation apparatus 2 that separates wafers W formed by slicing an ingot S made of single crystal silicon into strips by a slicing machine M 1 one by one. And a cleaning device 3 for cleaning the separated wafers W one by one, a wafer stuffing device 4 for storing the cleaned wafers W in a cassette, and a separation for peeling off carbon etc. remaining on the separated wafers W It has a tank 5 and a cleaning tank group 6 for performing additional cleaning of the wafer W.
 インゴットSは、カーボン製の板からなる支持台C(図6参照。)を介して支持板Pに支持されて、スライスマシンM1によって短冊状にスライスされる。インゴットSは支持台Cに接着剤(図示せず。)により貼着されており、支持台Cの一部まで含めて短冊状にスライスされ、ウエハWが支持台Cにぶら下げられた状態のまま、スライスマシンM1からスライス取出機M2によって取り出され、分離装置2にセットされる。 Ingot S is the support base C (see FIG. 6.) Made of carbon steel plate supported by a support plate P via, it is sliced in a strip shape by slicing machine M 1. The ingot S is adhered to the support base C with an adhesive (not shown), is sliced into a strip shape including part of the support base C, and the wafer W remains suspended from the support base C. , taken out from the slice machine M 1 by the slice unloader M 2, it is set to the separator 2.
 分離装置2は、図2~図4に示すように、スライスされたウエハWを支持台Cにぶら下げられた状態で保持するホルダ20と、ホルダ20に保持されたウエハWを水中に浸漬した状態で分離するための水槽21と、ウエハWを1枚ずつ分離する分離ハンド22とを有する。 As shown in FIGS. 2 to 4, the separation apparatus 2 includes a holder 20 that holds the sliced wafer W in a state of being suspended from the support base C, and a state in which the wafer W held by the holder 20 is immersed in water. And a separation hand 22 for separating the wafers W one by one.
 分離ハンド22は、ウエハWを吸着する吸着パッド23と、吸着パッド23を回動させる略L字形の回動アーム24と、回動アーム24を回動可能に支持する支持ベース25と、分離ハンド22を前後進させるための前後進アクチュエータ26と、分離ハンド22をホルダ20に保持されたウエハWのピッチで移動するためのピッチ送りアクチュエータ27と、分離ハンド22を回動させるための回動アクチュエータ28とを有する。 The separation hand 22 includes a suction pad 23 that sucks the wafer W, a substantially L-shaped rotation arm 24 that rotates the suction pad 23, a support base 25 that rotatably supports the rotation arm 24, and a separation hand. A forward / backward actuator 26 for moving the separation hand 22 back and forth, a pitch feed actuator 27 for moving the separation hand 22 at the pitch of the wafer W held by the holder 20, and a rotation actuator for rotating the separation hand 22 28.
 なお、本実施形態においては、支持ベース25は前後進アクチュエータ26に保持され、前後進アクチュエータ26はピッチ送りアクチュエータ27に保持されている。回動アクチュエータ28は回動アーム24を回動させることにより分離ハンド22を回動させる。すなわち、分離ハンド22は、ウエハWの吸着面(図2の左側面および図4の正面)に対して垂直方向(図2および図3の左右方向)およびウエハWの吸着面と平行な面内で前後方向(図3の上下方向および図4の左右方向)に移動可能であり、かつウエハWを吸着した状態で上方向(図2参照。)に回動可能となっている。 In this embodiment, the support base 25 is held by the forward / reverse actuator 26, and the forward / backward actuator 26 is held by the pitch feed actuator 27. The turning actuator 28 turns the separation hand 22 by turning the turning arm 24. That is, the separation hand 22 is in a direction perpendicular to the suction surface of the wafer W (the left side surface in FIG. 2 and the front surface in FIG. 4) (the left-right direction in FIGS. 2 and 3) and parallel to the suction surface of the wafer W. 3 can be moved in the front-rear direction (vertical direction in FIG. 3 and left-right direction in FIG. 4), and can be rotated upward (see FIG. 2) with the wafer W adsorbed.
 洗浄装置3は、ウエハWを1枚ずつ搬送するコンベア装置30と、コンベア装置30の上下に配置されたシャワー装置31a,31bとを備えている。コンベア装置30は、図2に示すように、コンベア前後進アクチュエータ32によって、分離ハンド22に吸着されたウエハWの下方へ向かって前後進するように構成されている。分離ハンド22からコンベア装置30上へ載置されたウエハWは、コンベア装置30によってウエハ詰め込み装置4へ搬送される際に、その表裏面に対してシャワー装置31a,31bから噴射される洗浄水によって1枚ずつ洗浄される。 The cleaning device 3 includes a conveyor device 30 that transports the wafers W one by one, and shower devices 31 a and 31 b arranged above and below the conveyor device 30. As shown in FIG. 2, the conveyor device 30 is configured to move forward and backward toward the lower side of the wafer W attracted to the separation hand 22 by a conveyor forward / backward actuator 32. When the wafer W placed on the conveyor device 30 from the separation hand 22 is transported to the wafer filling device 4 by the conveyor device 30, the cleaning water is sprayed from the shower devices 31 a and 31 b to the front and back surfaces of the wafer W. Wash one by one.
 ここで、分離装置2の動作について、図5のフロー図に従って説明する。まず、前後進アクチュエータ26、ピッチ送りアクチュエータ27、回動アクチュエータ28およびコンベア前後進アクチュエータ32を作動させ、分離ハンド22およびコンベア装置30を開始位置で待機させる(ステップS101)。このとき、分離ハンド22は、図2および図3の最も左側(後述するコンベア装置30側)のウエハWの後方位置(図4参照。)に配置され、コンベア装置30は、図2に実線で示すように分離ハンド22の回動動作に干渉しない位置に配置されている。 Here, the operation of the separation device 2 will be described with reference to the flowchart of FIG. First, the forward / backward actuator 26, the pitch feed actuator 27, the rotation actuator 28, and the conveyor forward / backward actuator 32 are operated, and the separation hand 22 and the conveyor device 30 are put on standby at the start position (step S101). At this time, the separation hand 22 is disposed at the rear position (see FIG. 4) of the wafer W on the leftmost side (the conveyor device 30 side described later) in FIGS. 2 and 3, and the conveyor device 30 is indicated by a solid line in FIG. As shown, the separation hand 22 is disposed at a position that does not interfere with the turning operation.
 次に、回動アクチュエータ28により回動アーム24(分離ハンド22)を上方へ微回動させた状態で、前後進アクチュエータ26により分離ハンド22を前進させ、ホルダ20内のウエハWを吸着可能な位置へ配置する(ステップS102)。続いて、回動アクチュエータ28により回動アーム24を下方へ微回動させ、分離ハンド22の吸着パッド23の吸着面をウエハWの吸着面に対して平行とし(ステップS103)、吸着パッド23によりウエハWの1枚を吸着する(ステップS104)。 Next, in a state where the rotating arm 24 (separation hand 22) is slightly rotated upward by the rotation actuator 28, the separation hand 22 is advanced by the forward / reverse actuator 26, and the wafer W in the holder 20 can be adsorbed. Arrange to the position (step S102). Subsequently, the rotation arm 24 is slightly rotated downward by the rotation actuator 28 so that the suction surface of the suction pad 23 of the separation hand 22 is parallel to the suction surface of the wafer W (step S103). One of the wafers W is sucked (step S104).
 次いで、回動アクチュエータ28により回動アーム24を上方の中間位置まで回動させると、ウエハWが支持台Cの部分で分離される(ステップS105)。次に、ウエハWを吸着したまま前後進アクチュエータ26により分離ハンド22を後進させ(ステップS106)、回動アクチュエータ28により分離ハンド22をコンベア装置30よりも上の位置まで回動させる(ステップS107)。 Next, when the rotation arm 24 is rotated to the upper intermediate position by the rotation actuator 28, the wafer W is separated at the portion of the support base C (step S105). Next, the separation hand 22 is moved backward by the forward / reverse actuator 26 with the wafer W adsorbed (step S106), and the separation hand 22 is rotated to a position above the conveyor device 30 by the rotation actuator 28 (step S107). .
 次いで、コンベア前後進アクチュエータ32によって、コンベア装置30を分離ハンド22に吸着されたウエハWの下方の受け取り位置まで前進させる(ステップS108)。次に、吸着パッド23に吸着しているウエハWが離され、コンベア装置30上へ載置され、コンベア装置30により搬送される(ステップS109)。ここで、ウエハWはコンベア装置30により搬送されながら、シャワー装置31a,31bから噴射される洗浄水によって1枚ずつ表裏面が洗浄される。 Next, the conveyor device 30 is advanced by the conveyor forward / reverse actuator 32 to a receiving position below the wafer W attracted by the separation hand 22 (step S108). Next, the wafer W sucked on the suction pad 23 is released, placed on the conveyor device 30, and conveyed by the conveyor device 30 (step S109). Here, the front and back surfaces of the wafers W are cleaned one by one with the cleaning water sprayed from the shower devices 31 a and 31 b while being transferred by the conveyor device 30.
 次いで、コンベア装置30をコンベア前後進アクチュエータ32によって待機位置まで後進させる(ステップS110)。その後、回動アクチュエータ28により分離ハンド22を下方へ回動させる(ステップS111)。そして、分離ハンド22はピッチ送りアクチュエータ27により次のウエハWの位置までピッチ送りされ(ステップS112)、ステップS102へ戻って繰り返しウエハWの分離動作が行われる。 Next, the conveyor device 30 is moved backward to the standby position by the conveyor forward / reverse actuator 32 (step S110). Thereafter, the separation hand 22 is rotated downward by the rotation actuator 28 (step S111). Then, the separation hand 22 is pitch-fed to the position of the next wafer W by the pitch feed actuator 27 (step S112), and the process returns to step S102 to repeatedly perform the wafer W separation operation.
 ウエハ詰め込み装置4は、コンベア装置30によって1枚ずつ搬送された洗浄後のウエハWを1枚ずつカセット40に収容するものである。カセット40は、ウエハWが1枚ずつ収容されるごとに水槽41内に徐々に下降し、水槽41内の水に浸漬されるようになっている。ウエハWの収容が完了したカセット40は、カセット移載機7によって剥離槽5へ移載されるようになっている。 The wafer stuffing device 4 stores the wafers W after cleaning, which are conveyed one by one by the conveyor device 30, one by one in the cassette 40. Each time the wafer W is accommodated one by one, the cassette 40 is gradually lowered into the water tank 41 and immersed in the water in the water tank 41. The cassette 40 in which the wafer W has been accommodated is transferred to the peeling tank 5 by the cassette transfer machine 7.
 剥離槽5では、分離ハンド22によって支持台Cの部分で分離されたウエハWから、この支持台Cの切片および支持台CとウエハWとの間に介在する接着剤を剥離するものである。本実施形態においては、支持台Cはカーボン製の板であり、カーボンおよび接着剤を剥離可能な薬剤にカセット40ごとウエハWを浸漬することにより、ウエハWからカーボン等を剥離する。カーボン等の剥離が完了したカセット40は、カセット搬送機8によって洗浄槽群6を順次搬送され、追加洗浄が行われる。 In the peeling tank 5, the section of the support table C and the adhesive interposed between the support table C and the wafer W are peeled from the wafer W separated at the support table C by the separation hand 22. In the present embodiment, the support base C is a carbon plate, and the wafer W and the cassette 40 are immersed in a chemical capable of peeling off the carbon and the adhesive, whereby the carbon and the like are peeled off from the wafer W. The cassette 40 from which carbon or the like has been peeled is sequentially transported through the cleaning tank group 6 by the cassette transporter 8 and is subjected to additional cleaning.
 上記構成のウエハ製造装置1では、支持台Cに接着剤により貼着されたインゴットSを支持台Cの一部まで含めて短冊状にスライスして形成されたウエハWを、従来のように支持台Cにぶら下がった状態のまま粗洗浄するのではなく、支持台Cの部分で分離装置2により1枚ずつ分離し、この分離されたウエハWの表裏面を洗浄装置3により1枚ずつ洗浄する。したがって、このウエハ製造装置1では、短冊状にスライスされて支持台Cにぶら下がった状態でのウエハW間の隙間(ピッチ)およびウエハWの大きさに関係なく、ウエハWの表裏面を容易かつ均一に洗浄することができ、高品質なウエハを安定的に得ることが可能である。 In the wafer manufacturing apparatus 1 having the above-described configuration, the wafer W formed by slicing in a strip shape including the ingot S adhered to the support base C with an adhesive up to a part of the support base C is supported as in the past. Rather than performing rough cleaning while hanging on the table C, the support table C is separated one by one by the separation device 2, and the front and back surfaces of the separated wafers W are washed one by one by the cleaning device 3. . Therefore, in this wafer manufacturing apparatus 1, the front and back surfaces of the wafer W can be easily and easily formed regardless of the gap (pitch) between the wafers W and the size of the wafers W when they are sliced into strips and hung on the support base C. Cleaning can be performed uniformly, and a high-quality wafer can be stably obtained.
 また、このウエハ製造装置1では、分離装置2において、ウエハWを吸着パッド23に吸着し、ウエハWと吸着パッド23とを一体化して剛性を高めて、スライスマシンM1による支持台Cの切断終端を基点にして分離ハンド22を回動することで、支持台Cの既切断部を支持台の未切断部から分離している。そのため、支持台Cは、支持台Cの強度≦(吸着パッド23+ウエハW)の強度の条件が成立するものが好ましく、本実施形態においてはカーボン板を用いているが、樹脂板やアルミナ板等を用いることも可能である。 Further, in the wafer manufacturing apparatus 1, the separation device 2, the wafer W is attracted to the suction pad 23, by integrating the wafer W and the suction pad 23 to enhance the rigidity, the cutting of the support C by slicing machines M 1 By rotating the separation hand 22 with the end point as a base point, the already cut portion of the support base C is separated from the uncut portion of the support base. Therefore, it is preferable that the support base C satisfies the condition that the strength of the support base C ≦ (suction pad 23 + wafer W). In this embodiment, a carbon plate is used, but a resin plate, an alumina plate, or the like is used. It is also possible to use.
 また、本実施形態における分離装置2では、ホルダ20に保持されたウエハWを水槽21により水中に浸漬した状態で分離ハンド22により吸着して分離するため、ウエハWを支持台Cから1枚ずつ分離している間に、その表裏面が乾燥するのを防止することができ、スライスによりウエハW表面に付着したスライス粉、砥粒やクーラント等を乾燥させることなく、洗浄装置3によりウエハWの1枚ずつ表裏面を洗浄することが可能となっている。 Further, in the separation apparatus 2 in the present embodiment, the wafers W held by the holder 20 are adsorbed and separated by the separation hand 22 in a state of being immersed in water by the water tank 21, so that the wafers W are separated from the support base C one by one. While separating, it is possible to prevent the front and back surfaces from drying, and the cleaning device 3 does not dry the slicing powder, abrasive grains, coolant, etc. adhering to the surface of the wafer W by slicing. The front and back surfaces can be cleaned one by one.
 また、洗浄後のウエハWについても、1枚ずつ洗浄されたウエハWをウエハ詰め込み装置4によりカセット40に収容し、カセット40をウエハWが1枚ずつ収容されるごとに水槽41内に徐々に下降させて、水槽41内の水に浸漬させており、ウエハWを1枚ずつ収容している間にウエハWの表裏面を乾燥させることなく、次の剥離槽5でのカーボン等の剥離を行うことが可能となっている。 As for the cleaned wafers W, the wafers W, which have been cleaned one by one, are stored in the cassette 40 by the wafer filling device 4, and the cassette 40 is gradually stored in the water tank 41 each time the wafers W are stored one by one. It is lowered and immersed in the water in the water tank 41, and the carbon and the like in the next peeling tank 5 are peeled off without drying the front and back surfaces of the wafer W while the wafers W are stored one by one. It is possible to do.
 さらに、本実施形態におけるウエハ製造装置1では、ウエハWが収容されたカセット40を剥離槽5内に浸漬して、ウエハWから支持台Cの切片および接着剤を剥離する構成であるため、1枚ずつ分離したウエハW同士が後工程で接触することがなく、ウエハWの取り扱い不良による品質低下を防止することができ、歩留まりを向上させることが可能となっている。 Furthermore, in the wafer manufacturing apparatus 1 according to the present embodiment, since the cassette 40 in which the wafer W is accommodated is immersed in the peeling tank 5, the section of the support base C and the adhesive are peeled off from the wafer W. The wafers W separated from each other do not come into contact with each other in the subsequent process, and it is possible to prevent quality deterioration due to poor handling of the wafers W and to improve the yield.
 なお、本実施形態における分離装置2では、分離ハンド22はウエハWの吸着面と平行な面内で前後方向に移動可能としたが、前後方向に限定されるものではない。要するに、分離ハンド22をホルダ20に対してウエハWの吸着面と平行な面内で進退方向に移動可能であれば良い。 In the separation apparatus 2 according to the present embodiment, the separation hand 22 is movable in the front-rear direction within a plane parallel to the suction surface of the wafer W, but is not limited to the front-rear direction. In short, it is only necessary that the separation hand 22 can be moved in the advancing and retracting direction within a plane parallel to the suction surface of the wafer W with respect to the holder 20.
 また、本実施形態における分離装置2では、分離ハンド22がウエハWを1枚ずつ吸着して回動することにより折り取るものであるが、ウエハWの分離は、折り取る以外の方法で行う構成とすることも可能である。その他の分離手段の例としては、図6~図11に示すものが挙げられる。 Further, in the separation apparatus 2 according to the present embodiment, the separation hand 22 sucks and rotates the wafer W one by one, but the wafer W is separated by a method other than the folding. It is also possible. Examples of other separation means include those shown in FIGS.
 図6は超音波カッターにより切断する構成を示している。同図(a)に示すように、支持台Cにぶら下げられた状態のウエハWの吸着面(同図(a)の正面)を、図示しない分離ハンド22により吸着した状態で、超音波カッター50により1枚ずつ切断して分離する。このとき、同図(b)に示すように、超音波カッター50のカッター刃50aの先端を、ウエハWを支持する支持台Cの部分に接触させて移動させ、支持台Cの部分を切断する。これにより、ウエハWは分離ハンド22に吸着した状態で1枚ずつ分離される。なお、ウエハWに残った支持台Cの切片および接着剤は、前述のように剥離層5で分離する。 FIG. 6 shows a configuration for cutting with an ultrasonic cutter. As shown in FIG. 6A, the ultrasonic cutter 50 in a state where the suction surface (front side of FIG. 6A) of the wafer W suspended from the support C is sucked by the separation hand 22 (not shown). To cut and separate one by one. At this time, as shown in FIG. 4B, the tip of the cutter blade 50a of the ultrasonic cutter 50 is moved in contact with the portion of the support base C that supports the wafer W, and the portion of the support base C is cut. . Thereby, the wafers W are separated one by one while being attracted to the separation hand 22. The section of the support base C and the adhesive remaining on the wafer W are separated by the release layer 5 as described above.
 図7は高速ウォータージェットにより切断する構成を示している。同図(a)に示すように、支持台Cにぶら下げられた状態のウエハWの吸着面(同図(a)の正面)を、図示しない分離ハンド22により吸着した状態で、高圧水ノズルガン51から高圧水51aを噴射することにより1枚ずつ切断して分離する。このとき、同図(b)に示すように、高圧水ノズルガン51から噴射される高圧水51aの先端を、ウエハWを支持する支持台Cの部分に接触させて移動させ、支持台Cの部分を切断する。これにより、ウエハWは分離ハンド22に吸着した状態で1枚ずつ分離される。 FIG. 7 shows a configuration for cutting with a high-speed water jet. As shown in FIG. 6A, the high-pressure water nozzle gun 51 is in a state where the suction surface (front side of FIG. 6A) of the wafer W hung from the support table C is sucked by the separation hand 22 (not shown). The high pressure water 51a is ejected from the water and cut and separated one by one. At this time, as shown in FIG. 5B, the tip of the high-pressure water 51a sprayed from the high-pressure water nozzle gun 51 is moved in contact with the portion of the support base C that supports the wafer W, and the portion of the support base C is moved. Disconnect. Thereby, the wafers W are separated one by one while being attracted to the separation hand 22.
 図8はレーザ光により切断する構成を示している。同図(a)に示すように、支持台Cにぶら下げられた状態のウエハWの吸着面(同図(a)の正面)を、図示しない分離ハンド22により吸着した状態で、レーザ照射ヘッド52からレーザビームを照射することにより1枚ずつ切断して分離する。このとき、同図(b)に示すように、レーザ照射ヘッド52から照射されるレーザビーム52aの先端を、ウエハWを支持する支持台Cの部分に接触させて移動させ、支持台Cの部分を切断する。これにより、ウエハWは分離ハンド22に吸着した状態で1枚ずつ分離される。 FIG. 8 shows a configuration for cutting with laser light. As shown in FIG. 6A, the laser irradiation head 52 is in a state where the suction surface (front side of FIG. 6A) of the wafer W hung from the support table C is sucked by the separation hand 22 (not shown). Are cut and separated one by one by irradiating them with a laser beam. At this time, as shown in FIG. 4B, the tip of the laser beam 52a irradiated from the laser irradiation head 52 is moved in contact with the portion of the support base C that supports the wafer W, and the portion of the support base C is moved. Disconnect. Thereby, the wafers W are separated one by one while being attracted to the separation hand 22.
 図9はワイヤソーにより切断する構成を示している。同図(a)に示すように、支持台Cにぶら下げられた状態のウエハWの吸着面(同図(a)の正面)を、図示しない分離ハンド22により吸着した状態で、ワイヤソー53により1枚ずつ切断して分離する。このとき、同図(b)に示すように、ワイヤソー53の固定砥粒ワイヤ53aを、ウエハWを支持する支持台Cの部分に接触させ、ウエハWの吸着面に沿って往復移動させ、支持台Cの部分を切断する。これにより、ウエハWは分離ハンド22に吸着した状態で1枚ずつ分離される。 FIG. 9 shows a configuration for cutting with a wire saw. As shown in FIG. 6A, the wafer W suspended by the support base C is attracted by the wire saw 53 while being attracted by the separation hand 22 (not shown). Cut and separate one by one. At this time, as shown in FIG. 5B, the fixed abrasive wire 53a of the wire saw 53 is brought into contact with the portion of the support base C that supports the wafer W, and is reciprocated along the suction surface of the wafer W to support it. The part of the base C is cut. Thereby, the wafers W are separated one by one while being attracted to the separation hand 22.
 図10は帯のこにより切断する構成を示している。同図(a)に示すように、支持台Cにぶら下げられた状態のウエハWの吸着面(同図(a)の正面)を、図示しない分離ハンド22により吸着した状態で、帯のこ54により1枚ずつ切断して分離する。このとき、同図(b)に示すように、帯のこ54ののこ刃54aを、ウエハWを支持する支持台Cの部分に接触させ、ウエハWの吸着面に沿って往復移動させ、支持台Cの部分を切断する。これにより、ウエハWは分離ハンド22に吸着した状態で1枚ずつ分離される。 FIG. 10 shows a configuration for cutting with a band saw. As shown in FIG. 6A, the band saw 54 is in a state where the suction surface (front side of FIG. 5A) of the wafer W hung on the support base C is sucked by the separation hand 22 (not shown). To cut and separate one by one. At this time, as shown in FIG. 4B, the saw blade 54a of the band saw 54 is brought into contact with the portion of the support base C that supports the wafer W, and is reciprocated along the suction surface of the wafer W. A portion of the support base C is cut. Thereby, the wafers W are separated one by one while being attracted to the separation hand 22.
 図11は丸のこにより切断する構成を示している。同図(a)に示すように、支持台Cにぶら下げられた状態のウエハWの吸着面(同図(a)の正面)を、図示しない分離ハンド22により吸着した状態で、丸のこ55により1枚ずつ切断して分離する。このとき、同図(b)に示すように、丸のこ55の回転カッター55aを、ウエハWを支持する支持台Cの部分に接触させ、ウエハWの吸着面に沿って移動させ、支持台Cの部分を切断する。これにより、ウエハWは分離ハンド22に吸着した状態で1枚ずつ分離される。ダイシングソーやグラインダにより切断する場合も同様の構成である。 FIG. 11 shows a configuration for cutting with a circular saw. As shown in FIG. 6A, the circular saw 55 is shown in a state where the suction surface (front side of FIG. 6A) of the wafer W hung on the support table C is sucked by the separation hand 22 (not shown). To cut and separate one by one. At this time, as shown in FIG. 5B, the rotary cutter 55a of the circular saw 55 is brought into contact with the portion of the support table C that supports the wafer W, and is moved along the suction surface of the wafer W, thereby supporting the support table. Cut part C. Thereby, the wafers W are separated one by one while being attracted to the separation hand 22. The same configuration is used when cutting with a dicing saw or grinder.
 本発明のウエハの製造方法および製造装置は、インゴットをスライスして形成されるウエハを1枚ずつ分離して洗浄することによりウエハを製造する方法および装置として有用である。 The wafer manufacturing method and manufacturing apparatus of the present invention are useful as a method and apparatus for manufacturing a wafer by separating and cleaning wafers formed by slicing an ingot one by one.
 1 ウエハ製造装置
 2 分離装置
 3 洗浄装置
 4 ウエハ詰め込み装置
 5 剥離槽
 6 洗浄槽群
 20 ホルダ
 21 水槽
 22 分離ハンド
 23 吸着パッド
 24 回動アーム
 25 支持ベース
 26 前後進アクチュエータ
 27 ピッチ送りアクチュエータ
 28 回動アクチュエータ
 30 コンベア装置
 31a,31b シャワー装置
 32 コンベア前後進アクチュエータ
 40 カセット
 41 水槽
 50 超音波カッター
 51 高圧水ノズルガン
 52 レーザ照射ヘッド
 53 ワイヤソー
 54 帯のこ
 55 丸のこ
DESCRIPTION OF SYMBOLS 1 Wafer manufacturing apparatus 2 Separation apparatus 3 Cleaning apparatus 4 Wafer filling apparatus 5 Separation tank 6 Cleaning tank group 20 Holder 21 Water tank 22 Separation hand 23 Adsorption pad 24 Rotating arm 25 Support base 26 Forward / reverse actuator 27 Pitch feed actuator 28 Rotating actuator DESCRIPTION OF SYMBOLS 30 Conveyor apparatus 31a, 31b Shower apparatus 32 Conveyor forward / reverse actuator 40 Cassette 41 Water tank 50 Ultrasonic cutter 51 High pressure water nozzle gun 52 Laser irradiation head 53 Wire saw 54 Band saw 55 Circular saw

Claims (5)

  1.  支持台に接着剤により貼着されたインゴットを前記支持台の一部まで含めて短冊状にスライスして形成されたウエハを前記支持台の部分で1枚ずつ分離すること、
     この分離されたウエハの表裏面を1枚ずつ洗浄すること、
     前記ウエハを剥離槽内に浸漬して、前記ウエハから前記支持台の切片および前記接着剤を剥離すること
    を含むウエハの製造方法。
    Separating the wafer formed by slicing the ingot attached to the support base with an adhesive up to a part of the support base into a strip shape one by one at the support base part,
    Cleaning the front and back surfaces of the separated wafers one by one;
    A method for producing a wafer, comprising immersing the wafer in a peeling tank and peeling the piece of the support base and the adhesive from the wafer.
  2.  前記1枚ずつ洗浄されたウエハをカセットに収容することを含み、
     このウエハが収容されたカセットを前記剥離槽内に浸漬することにより、前記ウエハから前記支持台の切片および前記接着剤を剥離することを特徴とする請求項1記載のウエハの製造方法。
    Containing the wafers cleaned one by one in a cassette,
    The wafer manufacturing method according to claim 1, wherein the cassette and the adhesive are separated from the wafer by immersing the cassette containing the wafer in the separation tank.
  3.  前記支持台に接着剤により貼着されたインゴットを前記支持台の一部まで含めて短冊状にスライスして形成されたウエハは、水中に浸漬した状態で、前記支持台の部分で1枚ずつ分離することを特徴とする請求項1または2に記載のウエハの製造方法。 Wafers formed by slicing strips including ingots adhered to the support table with an adhesive up to a part of the support table are immersed one by one in the support table. 3. The wafer manufacturing method according to claim 1, wherein the wafer is separated.
  4.  支持台に接着剤により貼着されたインゴットを前記支持台の一部まで含めて短冊状にスライスして形成されたウエハを前記支持台の部分で1枚ずつ分離する分離装置と、
     この分離されたウエハの表裏面を1枚ずつ洗浄する洗浄装置と、
     前記ウエハを浸漬して、前記ウエハから前記支持台の切片および前記接着剤を剥離する剥離槽と
    を含むウエハの製造装置。
    A separation device that separates wafers formed by slicing in a strip shape including an ingot attached to a support table with an adhesive up to a part of the support table one by one at the support table part;
    A cleaning apparatus for cleaning the front and back surfaces of the separated wafers one by one;
    An apparatus for producing a wafer, comprising: a dipping tank for dipping the wafer and peeling the section of the support base and the adhesive from the wafer.
  5.  前記1枚ずつ洗浄されたウエハをカセットに収容するウエハ詰め込み装置を含み、
     前記剥離槽は、前記ウエハが収容されたカセットを剥離槽内に浸漬することにより、前記ウエハから前記支持台の切片および前記接着剤を剥離するものである請求項4記載のウエハの製造装置。
    Including a wafer stuffing device for storing the wafers washed one by one in a cassette;
    5. The wafer manufacturing apparatus according to claim 4, wherein the peeling tank peels the piece of the support base and the adhesive from the wafer by immersing the cassette containing the wafer in the peeling tank. 6.
PCT/JP2012/062518 2011-06-14 2012-05-16 Method and device for producing wafer WO2012172910A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106356322A (en) * 2016-10-20 2017-01-25 北方电子研究院安徽有限公司 Wafer corrosion device and corrosion method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5849201B2 (en) * 2013-05-28 2016-01-27 パナソニックIpマネジメント株式会社 Uncut portion removal device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0945640A (en) * 1995-08-03 1997-02-14 Mitsubishi Materials Shilicon Corp Leaf treating method and device of semiconductor wafer, its separating device, and device for eliminating surface deposit on semiconductor wafer surface
JPH11111652A (en) * 1997-09-30 1999-04-23 Arakawa Chem Ind Co Ltd Method for cleaning wafer-like work, cleaning basket used therefor, and cleaning housing
JPH11283942A (en) * 1998-03-30 1999-10-15 Shin Etsu Handotai Co Ltd Method and device for recovering wafer
JP2000232085A (en) * 1999-02-10 2000-08-22 Hitachi Ltd Manufacture of semiconductor device
JP2001313274A (en) * 2000-04-28 2001-11-09 Nippei Toyama Corp Method for recovering wafer
JP2005093964A (en) * 2003-09-22 2005-04-07 Sumitomo Electric Ind Ltd Method for manufacturing semiconductor device
JP2010103417A (en) * 2008-10-27 2010-05-06 Sumitomo Metal Fine Technology Co Ltd Method for manufacturing semiconductor wafer

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0945640A (en) * 1995-08-03 1997-02-14 Mitsubishi Materials Shilicon Corp Leaf treating method and device of semiconductor wafer, its separating device, and device for eliminating surface deposit on semiconductor wafer surface
JPH11111652A (en) * 1997-09-30 1999-04-23 Arakawa Chem Ind Co Ltd Method for cleaning wafer-like work, cleaning basket used therefor, and cleaning housing
JPH11283942A (en) * 1998-03-30 1999-10-15 Shin Etsu Handotai Co Ltd Method and device for recovering wafer
JP2000232085A (en) * 1999-02-10 2000-08-22 Hitachi Ltd Manufacture of semiconductor device
JP2001313274A (en) * 2000-04-28 2001-11-09 Nippei Toyama Corp Method for recovering wafer
JP2005093964A (en) * 2003-09-22 2005-04-07 Sumitomo Electric Ind Ltd Method for manufacturing semiconductor device
JP2010103417A (en) * 2008-10-27 2010-05-06 Sumitomo Metal Fine Technology Co Ltd Method for manufacturing semiconductor wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106356322A (en) * 2016-10-20 2017-01-25 北方电子研究院安徽有限公司 Wafer corrosion device and corrosion method

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