WO2012170166A3 - Procédé et système pour un dépôt chimique en phase vapeur en ligne - Google Patents

Procédé et système pour un dépôt chimique en phase vapeur en ligne Download PDF

Info

Publication number
WO2012170166A3
WO2012170166A3 PCT/US2012/038256 US2012038256W WO2012170166A3 WO 2012170166 A3 WO2012170166 A3 WO 2012170166A3 US 2012038256 W US2012038256 W US 2012038256W WO 2012170166 A3 WO2012170166 A3 WO 2012170166A3
Authority
WO
WIPO (PCT)
Prior art keywords
deposition
layer
buffer layer
chemical vapor
vapor deposition
Prior art date
Application number
PCT/US2012/038256
Other languages
English (en)
Other versions
WO2012170166A2 (fr
Inventor
Piero Sferlazzo
Thomas Michael Lampros
Original Assignee
Aventa Technologies Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/156,465 external-priority patent/US8865259B2/en
Application filed by Aventa Technologies Llc filed Critical Aventa Technologies Llc
Priority to KR1020147000434A priority Critical patent/KR20140037198A/ko
Priority to JP2014514471A priority patent/JP2014523479A/ja
Priority to EP12796599.4A priority patent/EP2718963A4/fr
Priority to CN201280028157.4A priority patent/CN103930970A/zh
Publication of WO2012170166A2 publication Critical patent/WO2012170166A2/fr
Publication of WO2012170166A3 publication Critical patent/WO2012170166A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45517—Confinement of gases to vicinity of substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02474—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02485—Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de dépôt chimique en phase vapeur en ligne et un système pour fabriquer un dispositif. Le procédé consiste à transporter une bande ou un substrat discret à travers une chambre de dépôt ayant une pluralité de modules de dépôt. Une couche tampon, une couche à fenêtre et une couche conductrice transparente sont déposées sur le substrat pendant un passage à travers respectivement un premier module de dépôt, un deuxième module de dépôt et un troisième module de dépôt. Avantageusement, les étapes de génération de la couche tampon, de la couche à fenêtre et de la couche conductrice transparente sont effectuées de manière séquentielle dans un environnement sous vide commun d'une seule chambre de dépôt et l'utilisation d'un procédé de dépôt par bain chimique classique pour déposer la couche tampon est éliminée. Le procédé est approprié pour la fabrication de différents types de dispositifs comprenant divers types de cellules solaire telles que des cellules solaires de diséléniure de cuivre, d'indium et de gallium.
PCT/US2012/038256 2011-06-09 2012-05-17 Procédé et système pour un dépôt chimique en phase vapeur en ligne WO2012170166A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020147000434A KR20140037198A (ko) 2011-06-09 2012-05-17 인라인 화학 기상 증착을 위한 방법 및 시스템
JP2014514471A JP2014523479A (ja) 2011-06-09 2012-05-17 インライン式の化学気相成長の方法及びシステム
EP12796599.4A EP2718963A4 (fr) 2011-06-09 2012-05-17 Procédé et système pour un dépôt chimique en phase vapeur en ligne
CN201280028157.4A CN103930970A (zh) 2011-06-09 2012-05-17 用于内联化学气相沉积的方法和系统

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/156,465 US8865259B2 (en) 2010-04-26 2011-06-09 Method and system for inline chemical vapor deposition
US13/156,465 2011-06-09

Publications (2)

Publication Number Publication Date
WO2012170166A2 WO2012170166A2 (fr) 2012-12-13
WO2012170166A3 true WO2012170166A3 (fr) 2013-04-25

Family

ID=47296674

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/038256 WO2012170166A2 (fr) 2011-06-09 2012-05-17 Procédé et système pour un dépôt chimique en phase vapeur en ligne

Country Status (5)

Country Link
EP (1) EP2718963A4 (fr)
JP (1) JP2014523479A (fr)
KR (1) KR20140037198A (fr)
CN (1) CN103930970A (fr)
WO (1) WO2012170166A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105047750A (zh) * 2014-10-10 2015-11-11 广东汉能薄膜太阳能有限公司 一种提高薄膜太阳能电池转换效率的方法
US20170314129A1 (en) * 2016-04-29 2017-11-02 Lam Research Corporation Variable cycle and time rf activation method for film thickness matching in a multi-station deposition system
EP3642896A4 (fr) * 2017-06-20 2021-03-31 Coreshell Technologies, Inc. Procédés, systèmes et compositions pour le dépôt en phase liquide de films minces sur la surface d'électrodes de batterie
US10697059B2 (en) 2017-09-15 2020-06-30 Lam Research Corporation Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching
CN111584676A (zh) * 2019-02-15 2020-08-25 北京铂阳顶荣光伏科技有限公司 镀膜设备及连续镀膜方法
JP6860048B2 (ja) * 2019-08-30 2021-04-14 株式会社明電舎 原子層堆積方法
JP7522670B2 (ja) 2021-01-12 2024-07-25 株式会社アルバック 連続処理装置
CN116334589B (zh) * 2023-03-22 2024-01-26 江苏微导纳米科技股份有限公司 基片处理设备及处理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040067641A1 (en) * 2002-10-02 2004-04-08 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US20060180200A1 (en) * 2003-05-08 2006-08-17 Charlotte Platzer Bjorkman Thin-film solar cell
US20080251120A1 (en) * 2004-03-11 2008-10-16 Solibro Ab Thin Film Solar Cell and Manufacturing Method
US20100221426A1 (en) * 2009-03-02 2010-09-02 Fluens Corporation Web Substrate Deposition System

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770485B2 (ja) * 1985-12-20 1995-07-31 キヤノン株式会社 光起電力素子の連続製造装置
JP2589599B2 (ja) * 1989-11-30 1997-03-12 住友精密工業株式会社 吹出型表面処理装置
JP2000306905A (ja) * 1999-04-22 2000-11-02 Sony Corp 薄膜形成装置
JP4364494B2 (ja) * 2002-10-07 2009-11-18 積水化学工業株式会社 プラズマ表面処理装置
JP2004360020A (ja) * 2003-06-05 2004-12-24 Konica Minolta Holdings Inc 薄膜形成方法及び薄膜形成装置
WO2009033503A1 (fr) * 2007-09-12 2009-03-19 Flisom Ag Procédé de fabrication d'un film composite
CN102246273A (zh) * 2008-10-10 2011-11-16 奥塔装置公司 连续进给式化学气相沉积
JP2010192690A (ja) * 2009-02-18 2010-09-02 Tdk Corp 太陽電池の製造方法
US7897020B2 (en) * 2009-04-13 2011-03-01 Miasole Method for alkali doping of thin film photovoltaic materials
US20100310766A1 (en) * 2009-06-07 2010-12-09 Veeco Compound Semiconductor, Inc. Roll-to-Roll Chemical Vapor Deposition System
JP2011063827A (ja) * 2009-09-15 2011-03-31 Fuji Electric Holdings Co Ltd プラズマｃｖｄ装置及びプラズマｃｖｄによる成膜方法
US20110262641A1 (en) * 2010-04-26 2011-10-27 Aventa Systems, Llc Inline chemical vapor deposition system
US8048707B1 (en) * 2010-10-19 2011-11-01 Miasole Sulfur salt containing CIG targets, methods of making and methods of use thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040067641A1 (en) * 2002-10-02 2004-04-08 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US20060180200A1 (en) * 2003-05-08 2006-08-17 Charlotte Platzer Bjorkman Thin-film solar cell
US20080251120A1 (en) * 2004-03-11 2008-10-16 Solibro Ab Thin Film Solar Cell and Manufacturing Method
US20100221426A1 (en) * 2009-03-02 2010-09-02 Fluens Corporation Web Substrate Deposition System

Also Published As

Publication number Publication date
EP2718963A2 (fr) 2014-04-16
KR20140037198A (ko) 2014-03-26
JP2014523479A (ja) 2014-09-11
CN103930970A (zh) 2014-07-16
WO2012170166A2 (fr) 2012-12-13
EP2718963A4 (fr) 2014-12-03

Similar Documents

Publication Publication Date Title
WO2012170166A3 (fr) Procédé et système pour un dépôt chimique en phase vapeur en ligne
WO2010080358A3 (fr) Processus de retrait d'une pellicule de bordure pour applications de cellules solaires à couche mince
WO2013190387A3 (fr) Oxyde de zinc nanocristallin pour modules photovoltaïques et procédé de traitement d'hydrogène
WO2012040299A3 (fr) Dispositif photovoltaïque à couche mince doté d'une couche fenêtre en oxyde de zinc et de magnésium
WO2012142439A8 (fr) Procédé et appareil permettant un dépôt de couches atomiques réalisé avec assistance ionique
WO2011090728A3 (fr) Piles solaires à bas coût, formées par utilisation d'un agent modifiant le taux de chalcogénisation
WO2010110871A3 (fr) Dépôt de matériaux vaporisés haute pression
WO2013012549A3 (fr) Système de traitement par dépôt chimique en phase vapeur à chambres multiples
WO2011143449A3 (fr) Procédé de fabrication de cellules solaires en silicium cristallin utilisant un dépôt par épitaxie
WO2008143885A3 (fr) Couche de protection utilisee dans la fabrication d'une cellule solaire
WO2014121187A3 (fr) Dispositif photovoltaïque qui comprend une jonction p-n et son procédé de fabrication
WO2013124394A3 (fr) Procédé de fabrication d'une cellule solaire
WO2017100393A3 (fr) Dispositifs photovoltaïques et procédé de fabrication
WO2010118149A3 (fr) Sulfurisation ou sélénisation à l'état fondu (liquide) pour applications photovoltaïques
MX2010007723A (es) Dispositivos fotovoltaicos tratados con plasma.
JP2014523479A5 (fr)
WO2008147113A3 (fr) Cellule solaire à fort rendement, sa méthode de fabrication et appareil servant à sa fabrication
WO2013022234A3 (fr) Procédé de fabrication de couche mince de czt(s,se) pour cellule solaire, et couche mince de czt(s,se) fabriquée à l'aide du procédé
MY159272A (en) Silicon thin film solar cell having improved haze and methods of making the same
GB2517325A (en) High efficiency solar cells fabricated by inexpensive PECVD
WO2009127709A3 (fr) Ligne d'assemblage pour dispositifs photovoltaïques
WO2012115519A3 (fr) Cellule solaire et procédé de fabrication d'une telle cellule solaire
EP2381477A3 (fr) Procédé d'augmentation de l'aire de surface effective d'un module photovoltaïque pv et substrats associés
WO2012021243A3 (fr) Procédés pour former des films diélectriques à faible contrainte
WO2012018783A3 (fr) Système et procédé de fabrication de dispositifs photovoltaïques à couche mince

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12796599

Country of ref document: EP

Kind code of ref document: A2

REEP Request for entry into the european phase

Ref document number: 2012796599

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2014514471

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20147000434

Country of ref document: KR

Kind code of ref document: A