WO2012115519A3 - Cellule solaire et procédé de fabrication d'une telle cellule solaire - Google Patents

Cellule solaire et procédé de fabrication d'une telle cellule solaire Download PDF

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Publication number
WO2012115519A3
WO2012115519A3 PCT/NL2012/050114 NL2012050114W WO2012115519A3 WO 2012115519 A3 WO2012115519 A3 WO 2012115519A3 NL 2012050114 W NL2012050114 W NL 2012050114W WO 2012115519 A3 WO2012115519 A3 WO 2012115519A3
Authority
WO
WIPO (PCT)
Prior art keywords
front surface
conductivity type
solar cell
layer
semiconductor substrate
Prior art date
Application number
PCT/NL2012/050114
Other languages
English (en)
Other versions
WO2012115519A2 (fr
Inventor
Lambert Johan Geerligs
Original Assignee
Energieonderzoek Centrum Nederland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energieonderzoek Centrum Nederland filed Critical Energieonderzoek Centrum Nederland
Publication of WO2012115519A2 publication Critical patent/WO2012115519A2/fr
Publication of WO2012115519A3 publication Critical patent/WO2012115519A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de fabrication d'une cellule solaire à partir d'un substrat semi-conducteur, le substrat semi-conducteur ayant une surface avant et une surface arrière, le procédé consistant : - à texturer la surface avant pour créer une surface avant texturée : - à lisser partiellement la surface avant texturée ; - à créer une couche d'un premier type de conductivité dans le substrat semi-conducteur adjacent à la surface avant texturée et lissée, par diffusion d'un dopant du premier type de conductivité dans la surface avant texturée ; - à créer une couche de passivation sur la surface avant par dépôt ou traitement chimique en phase humide après avoir créé ladite couche du premier type de conductivité ; - à déposer un système d'électrodes sur la surface arrière sans diffusion préalable d'une couche d'un second type de conductivité dans le substrat semi-conducteur adjacent à la surface arrière ou au plus avec diffusion d'une telle couche du second type de conductivité sélectivement sur le côté arrière seulement.
PCT/NL2012/050114 2011-02-24 2012-02-24 Cellule solaire et procédé de fabrication d'une telle cellule solaire WO2012115519A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL2006298A NL2006298C2 (en) 2011-02-24 2011-02-24 Solar cell and method for manufacturing such a solar cell.
NL2006298 2011-02-24

Publications (2)

Publication Number Publication Date
WO2012115519A2 WO2012115519A2 (fr) 2012-08-30
WO2012115519A3 true WO2012115519A3 (fr) 2012-10-26

Family

ID=45811603

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/NL2012/050114 WO2012115519A2 (fr) 2011-02-24 2012-02-24 Cellule solaire et procédé de fabrication d'une telle cellule solaire

Country Status (2)

Country Link
NL (1) NL2006298C2 (fr)
WO (1) WO2012115519A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI568003B (zh) * 2012-12-19 2017-01-21 茂迪股份有限公司 太陽能電池及其製造方法與太陽能電池模組
CN104091857A (zh) * 2014-06-30 2014-10-08 欧贝黎新能源科技股份有限公司 一种纳米绒面多晶硅太阳能电池低压变温扩散方法
CN104078567B (zh) * 2014-07-16 2017-02-15 深圳市石金科技股份有限公司 混合太阳能电池及其制备方法、空穴输运层形成方法
TWI574425B (zh) * 2016-05-20 2017-03-11 昱晶能源科技股份有限公司 太陽能電池及其製造方法
JP2018026388A (ja) * 2016-08-08 2018-02-15 パナソニックＩｐマネジメント株式会社 太陽電池及び太陽電池の製造方法
CN111081797B (zh) * 2019-12-31 2021-04-27 北京北方华创真空技术有限公司 一种单晶硅片的处理方法及其单晶硅片和太阳能电池
GB202020727D0 (en) * 2020-12-30 2021-02-10 Rec Solar Pte Ltd Solar cell

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010105703A1 (fr) * 2009-03-17 2010-09-23 Interuniversitair Microelektronica Centrum Vzw (Imec) Procédé de texturage au plasma

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1139997C (zh) 1997-03-21 2004-02-25 三洋电机株式会社 光电器件及其制造方法
JP2011515872A (ja) * 2008-03-25 2011-05-19 アプライド マテリアルズ インコーポレイテッド 結晶太陽電池の表面クリーニング及び凹凸形成プロセス
EP2159851A1 (fr) * 2008-09-01 2010-03-03 Université de Neuchâtel Procédé pour limiter la croissance épitaxiale dans un dispositif photoélectrique à hétérojonctions et un tel dispositif photoélctrique
NL2003390C2 (en) * 2009-08-25 2011-02-28 Stichting Energie Solar cell and method for manufacturing such a solar cell.

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010105703A1 (fr) * 2009-03-17 2010-09-23 Interuniversitair Microelektronica Centrum Vzw (Imec) Procédé de texturage au plasma

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
B.M. DAMIANI ET AL: "Development of RIE-textured silicon solar cells", CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2000 (CAT. NO.00CH37036), 1 January 2000 (2000-01-01), pages 371 - 374, XP055015422, ISBN: 978-0-78-035772-3, DOI: 10.1109/PVSC.2000.915843 *
COUSINS P J ET AL: "Minimizing lifetime degradation associated with thermal oxidation of upright randomly textured silicon surfaces", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 90, no. 2, 23 January 2006 (2006-01-23), pages 228 - 240, XP025142697, ISSN: 0927-0248, [retrieved on 20060123], DOI: 10.1016/J.SOLMAT.2005.03.008 *
MCINTOSH KEITH ET AL: "Recombination at textured silicon surfaces passivated with silicon dioxide", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 105, no. 12, 25 June 2009 (2009-06-25), pages 124520-1 - 124520-10, XP012125779, ISSN: 0021-8979, DOI: 10.1063/1.3153979 *
PARK H ET AL: "Effect of surface morphology on screen printed solar cells", CURRENT APPLIED PHYSICS, NORTH-HOLLAND, AMSTERDAM, NL, vol. 10, no. 1, 1 January 2010 (2010-01-01), pages 113 - 118, XP026546930, ISSN: 1567-1739, [retrieved on 20090520], DOI: 10.1016/J.CAP.2009.05.005 *
SALEEM H ZAIDI ET AL: "Characterization of Random Reactive Ion Etched-Textured Silicon Solar Cells", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 48, no. 6, 1 June 2001 (2001-06-01), XP011017665, ISSN: 0018-9383 *

Also Published As

Publication number Publication date
WO2012115519A2 (fr) 2012-08-30
NL2006298C2 (en) 2012-08-27

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