WO2012163655A1 - Procédé de fabrication de composants à diodes électroluminescentes comprenant des convertisseurs de longueur d'onde dans l'encapsulation - Google Patents

Procédé de fabrication de composants à diodes électroluminescentes comprenant des convertisseurs de longueur d'onde dans l'encapsulation Download PDF

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Publication number
WO2012163655A1
WO2012163655A1 PCT/EP2012/058825 EP2012058825W WO2012163655A1 WO 2012163655 A1 WO2012163655 A1 WO 2012163655A1 EP 2012058825 W EP2012058825 W EP 2012058825W WO 2012163655 A1 WO2012163655 A1 WO 2012163655A1
Authority
WO
WIPO (PCT)
Prior art keywords
emitting diode
light
chip
diode chip
spray mass
Prior art date
Application number
PCT/EP2012/058825
Other languages
German (de)
English (en)
Inventor
Harald JÄGER
Hans-Christoph Gallmeier
Herbert Brunner
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2012163655A1 publication Critical patent/WO2012163655A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Definitions

  • the invention relates to a method for producing light-emitting diode components, in which at least part of a light emitted by a light-emitting diode chip,
  • the light-emitting diode component has a light-emitting diode chip, also known as LED.
  • the primary radiation emitted by the LED is radiated onto a conversion medium. In this, the primary radiation of the LED becomes a
  • At least in-house are manufacturing processes of
  • Light-emitting diode components the at least a portion of, emitted by an LED, primary radiation
  • a central arrangement of the chip connections is here
  • the method of volume conversion is known.
  • the light-emitting diode chip is wrapped after wire contacting with a potting material to which the converter is already mixed.
  • the wrapping of the chip happens by casting.
  • converter quenching also known as converter quenching, processes are referred to, which result in a decrease in the intensity of the fluorescence of a fluorescence agent, without the
  • Fluorescent agent is destroyed. This is no longer adequate conversion and it comes to inhomogeneities of the color location. Particularly affected by this are
  • light-emitting devices are characterized by
  • volume conversion can be made due to their
  • the object of the present invention is to develop a method for the production of light-emitting diode components with a conversion element which avoid inhomogeneities of the color locus or chromaticity variations and achieve improved color homogeneity over the emission angle.
  • a multiplicity of similar light-emitting diode components each having one LED and one LED
  • the wafer is introduced with the light-emitting diode chips in a cavity of an injection mold, in which in a further step, a spray mass is driven.
  • This spray mass is mixed with a conversion agent and is driven in such a way that the entire wafer surface
  • Wafer composite are isolated.
  • uniform may in particular mean that the light-emitting diode chips are exposed along their entire length
  • silicone with attached converter is used as the sprayed material.
  • the spray mass may contain at least one light source.
  • inorganic substances such as garnets doped with rare earths or nitrides are suitable for this purpose.
  • rare earth-doped aluminates or orthosilicates are known from WO 98/12757.
  • particles are added to the silicone-converter mixture SiO 2 _ to prevent the silicone from thermal damage and the converter from aging
  • thermally conductive material can be added to these combinations of filler material and converter.
  • the injection mold is designed such that results in a smooth, even surface of the spray mass.
  • the injection mold is designed such that the cover of the chip is designed in three dimensions, for example in the form of a dome. As a result, an improvement in the color homogeneity over the emission angle is achieved at the same time.
  • the "wire bond ubend" of the chip is kept free of injection molding compound in order to enable wire bonding of the chip. This is done suitably by removal of the mass, over the relevant electrical contacts, by means of laser.
  • the injection molding tool is designed such that it directly seals the bond contact and thus keeps it free of potting material.
  • connection contact the so-called “bond ubend”
  • a photoactive layer which in the
  • Connection can be removed again. This can be realized, for example, by wet-chemical methods.
  • the light-emitting diode chips after wrapping, by means of sawing the wafer, isolated.
  • pre-sorted light-emitting diode chips arranged to form an artificial wafer and this introduced into a cavity of an injection mold, in which in a further step a
  • Injected mass is injected.
  • This spray mass is mixed with conversion means and is driven in such a way that the entire wafer surface is uniformly covered. Subsequently, the injection mold is removed and the
  • Light-emitting diode components from the artificial wafer composite are isolated.
  • wavelength-predefined light-emitting diode chips into an artificial wafer takes place.
  • it can only light-emitting diode chips, the one
  • each light-emitting diode chip takes the same course, arise after the separation of light emitting diode components that emit, for example, white mixed light from a narrow Farbort Scheme. Another one
  • Color location can then be omitted.
  • "Uniform" means, among other things, that the course of the spray mass over each LED chip is the same. That is, within the scope of the manufacturing tolerance, the spray mass has the same shape and extent over each of the light-emitting diode chips.
  • Light-emitting diode components whose color distribution is restricted by the presorting to produce.
  • the light-emitting diode chip comprises an active region in which the electromagnetic primary radiation, for example blue light, is generated during operation of the light-emitting diode chip.
  • the electromagnetic primary radiation for example blue light
  • this main surface for example, a carrier for the epitaxial
  • the light-emitting diode chip comprises at least one electrically conductive plated-through hole, in particular a multiplicity of electrically conductive plated-through holes, which penetrate the active region from the side facing away from the main surface of the light-emitting diode chip.
  • the n-conducting side of the light-emitting diode chip can be connected in an electrically conductive manner.
  • a contact surface, for example a bonding pad, for electrically connecting the n-side of the light-emitting diode chip can then be arranged laterally adjacent to the semiconductor body of the light-emitting diode chip.
  • the thickness of the spray mass at its thickest point is at most 100 ym.
  • the thickness of the spray mass at its thinnest point does not fall below 60 ym. In this way, it is possible to cover the LED chip with a sufficiently thick layer of conversion agents, so that the "blue piping" described above does not occur. On the other hand, with such a thin layer too much heating of the LED chip.
  • the individual light-emitting diode chips are separated by water jet cutting, lasers or punching.
  • the light-emitting diode chips are separated by means of a specially designed saw, which generates a structure on the side edges, along the parting line. This achieves a further improvement of the color homogeneity over the emission angle.
  • FIG. 1A shows an exemplary embodiment of an intermediate product which is produced according to an embodiment of the method according to the invention.
  • FIG. 1B shows an alternative embodiment of the invention
  • Figure 2A third embodiment of a
  • FIG. 2B shows an alternative embodiment of the invention
  • FIG. 3 shows a schematic sectional view of a light-emitting diode component produced by means of a method described here.
  • the intermediate product in FIG. 1A includes a chip carrier 1, which has light-emitting diode chips 3 and with a
  • the chip carrier 1 with applied light-emitting diode chips 3 was introduced into the cavity of an injection mold and by driving a
  • Spray mass 2 which is mixed with a conversion agent, uniformly formed with a layer
  • Chip carrier 1 separated by sawing along a parting line 4.
  • the intermediate product of one embodiment of the method according to the invention has a chip carrier 1 with applied light-emitting diode chips 3, which is covered by a layer of sprayed material 2.
  • the chip carrier 1 was introduced with the applied light-emitting diode chips 3 in a cavity of an injection mold and by driving a spray mass 2, the conversion agent are attached, uniformly surrounded with a layer of spray mass 2.
  • the cavity of the injection mold is designed so that a structured
  • Light-emitting diode chips 3 are subsequently separated by sawing along a dividing line 4.
  • the intermediate product in FIG. 2A includes chip carrier 1, with light-emitting diode chips 3 applied thereto, which are produced by
  • the cavity of the injection mold is in this case shaped such that a smooth, flat surface 5a is formed.
  • the light-emitting diode chips 3 each applied to a chip carrier 1 are singulated by means of sawing along a parting line 4.
  • the cavity of the injection mold is designed such that a structured surface 5b is formed.
  • the individual, up the chip carriers 1 arranged, light-emitting diode chips 3 are separated by sawing along a parting line 4.
  • the intermediates in Figures 2A and 2B can also be singulated by water cutting, punching or laser separation.
  • FIG. 3 shows a schematic sectional view of a light-emitting diode component produced by means of a method described here.
  • the light-emitting diode component has a chip carrier 1.
  • the chip carrier 1 can, for example, with an electrically conductive material such as germanium,
  • the LED chip 3 is arranged.
  • the light-emitting diode chip 3 consists, for example, of an epitaxially grown semiconductor body.
  • LED chip 3 can be free from a growth substrate. That is, for example, the chip carrier 1
  • the LED chip 3 consists of epitaxial
  • the light-emitting diode chip 3 comprises an active region 30.
  • the active region 30 primary radiation is generated during operation of the light-emitting diode chip 3. A large part of the primary radiation leaves the LED chip through the main surface 31. However, part of the primary radiation also exits through the lateral surfaces of the chip extending transversely to the main surface 31. Through the active region 30 extends
  • Semiconductor body of the LED chip 3 connects.
  • the contacting is carried out laterally on the light-emitting diode chip 3, and a contact surface 33 is exposed there.
  • the spray mass 2, which otherwise surrounds the light-emitting diode chip 3 is removed.
  • Contact surfaces 33 for example, a wire contacting of the LED chip 3 done, for example, in the contact surface 33 is then a so-called bond pad.
  • the invention is not by the description based on the

Abstract

L'invention concerne un procédé pour la fabrication d'une pluralité de composants à diodes électroluminescentes similaires, comprenant chacun au moins une puce à diode électroluminescente (3), et un moyen de conversion intégré dans la matière moulée par injection (2) entourant la puce à diode électroluminescente (3), qui convertit la longueur d'onde d'au moins une partie d'un rayonnement électromagnétique primaire émis par ladite au moins une puce à diode électroluminescente (3).
PCT/EP2012/058825 2011-05-27 2012-05-11 Procédé de fabrication de composants à diodes électroluminescentes comprenant des convertisseurs de longueur d'onde dans l'encapsulation WO2012163655A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE201110102590 DE102011102590A1 (de) 2011-05-27 2011-05-27 Verfahren zum Herstellen von Leuchtdioden-Bauelementen
DE102011102590.5 2011-05-27

Publications (1)

Publication Number Publication Date
WO2012163655A1 true WO2012163655A1 (fr) 2012-12-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/058825 WO2012163655A1 (fr) 2011-05-27 2012-05-11 Procédé de fabrication de composants à diodes électroluminescentes comprenant des convertisseurs de longueur d'onde dans l'encapsulation

Country Status (2)

Country Link
DE (1) DE102011102590A1 (fr)
WO (1) WO2012163655A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998012757A1 (fr) 1996-09-20 1998-03-26 Siemens Aktiengesellschaft Masse de scellement a effet convertisseur de longueur d'onde, utilisation et procede de production
US20050062140A1 (en) * 2003-09-18 2005-03-24 Cree, Inc. Molded chip fabrication method and apparatus
JP2005327786A (ja) * 2004-05-12 2005-11-24 Rohm Co Ltd 発光ダイオード素子の製造方法
US20070278513A1 (en) * 2006-06-01 2007-12-06 Sharp Kabushiki Kaisha Semiconductor light emitting device and method of fabricating the same
US20100295079A1 (en) * 2009-05-19 2010-11-25 Intematix Corporation Manufacture of light emitting devices with phosphor wavelength conversion
US20100295078A1 (en) * 2009-05-19 2010-11-25 Intematix Corporation Manufacture of light emitting devices with phosphor wavelength conversion
EP2477241A2 (fr) * 2011-01-12 2012-07-18 Samsung LED Co., Ltd. Procédé et appareil de dépôt de phosphore sur un dispositif électroluminescent semi-conducteur

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10008203B4 (de) * 2000-02-23 2008-02-07 Vishay Semiconductor Gmbh Verfahren zum Herstellen elektronischer Halbleiterbauelemente
DE10258193B4 (de) * 2002-12-12 2014-04-10 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von Leuchtdioden-Lichtquellen mit Lumineszenz-Konversionselement
DE102008025756B4 (de) * 2008-05-29 2023-02-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiteranordnung
DE102009036621B4 (de) * 2009-08-07 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998012757A1 (fr) 1996-09-20 1998-03-26 Siemens Aktiengesellschaft Masse de scellement a effet convertisseur de longueur d'onde, utilisation et procede de production
US20050062140A1 (en) * 2003-09-18 2005-03-24 Cree, Inc. Molded chip fabrication method and apparatus
JP2005327786A (ja) * 2004-05-12 2005-11-24 Rohm Co Ltd 発光ダイオード素子の製造方法
US20070278513A1 (en) * 2006-06-01 2007-12-06 Sharp Kabushiki Kaisha Semiconductor light emitting device and method of fabricating the same
US20100295079A1 (en) * 2009-05-19 2010-11-25 Intematix Corporation Manufacture of light emitting devices with phosphor wavelength conversion
US20100295078A1 (en) * 2009-05-19 2010-11-25 Intematix Corporation Manufacture of light emitting devices with phosphor wavelength conversion
EP2477241A2 (fr) * 2011-01-12 2012-07-18 Samsung LED Co., Ltd. Procédé et appareil de dépôt de phosphore sur un dispositif électroluminescent semi-conducteur

Also Published As

Publication number Publication date
DE102011102590A1 (de) 2012-11-29

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