WO2012147352A1 - 太陽電池セル、接合構造体、および太陽電池セルの製造方法 - Google Patents
太陽電池セル、接合構造体、および太陽電池セルの製造方法 Download PDFInfo
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- WO2012147352A1 WO2012147352A1 PCT/JP2012/002862 JP2012002862W WO2012147352A1 WO 2012147352 A1 WO2012147352 A1 WO 2012147352A1 JP 2012002862 W JP2012002862 W JP 2012002862W WO 2012147352 A1 WO2012147352 A1 WO 2012147352A1
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- Prior art keywords
- diffusion layer
- finger
- type diffusion
- connection pad
- solder connection
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- 238000000034 method Methods 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910000679 solder Inorganic materials 0.000 claims abstract description 166
- 230000004888 barrier function Effects 0.000 claims abstract description 82
- 238000009792 diffusion process Methods 0.000 claims abstract description 71
- 238000002161 passivation Methods 0.000 claims abstract description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims description 13
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 238000010248 power generation Methods 0.000 abstract description 12
- 238000005215 recombination Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 4
- 239000000969 carrier Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 16
- 238000003892 spreading Methods 0.000 description 10
- 238000009736 wetting Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 1
- -1 SiO 2 Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- the present invention relates to a back contact solar cell, a junction structure using the solar cell, and a method for manufacturing the solar cell.
- a P-type diffusion layer and an N-type diffusion layer are formed on the non-light-receiving surface and electrodes are provided, so that the back without the electrode on the light-receiving surface Contact-type solar cells are disclosed (see, for example, Patent Document 1 and Patent Document 2).
- 8 (a) to 8 (c) are diagrams showing typical back contact solar cells.
- FIG. 8A is a schematic diagram showing a light receiving surface of a back contact solar cell.
- the back contact solar cell 600 has a light receiving surface 601 on the surface of a silicon substrate 602.
- FIG. 8B is a schematic diagram showing a non-light-receiving surface of a back contact solar cell. Finger electrodes 604n and 604p, a cell internal passivation layer 605, and a cell outer periphery passivation layer 606 are formed on the non-light-receiving surface 603, which is the back surface of the back contact solar cell 600.
- FIG. 8 (c) is a diagram showing a LL cross section of FIG. 8 (b) of the back contact solar cell.
- a P-type diffusion layer 607 and an N-type diffusion layer 608 are formed on the non-light-receiving surface 603 of the silicon substrate 602.
- the P-type diffusion layer 607 and the N-type diffusion layer 608 are alternately formed on the non-light-receiving surface 603 of the silicon substrate 602 at regular intervals in order to reduce carrier recombination loss.
- a cell internal passivation layer 605 is formed between the P-type diffusion layer 607 and the N-type diffusion layer 608 in order to maintain insulation.
- a cell outer periphery passivation layer 606 is formed at the outer peripheral end of the silicon substrate 602 on the non-light-receiving surface 603 side.
- SiO 2 or SiN having good insulating properties is used for the cell inner passivation layer 605 and the cell outer periphery passivation layer 606, SiO 2 or SiN having good insulating properties is used.
- finger electrodes 604p and 604n for taking out electricity from the P-type diffusion layer 607 and the N-type diffusion layer 608 when sunlight enters from the light receiving surface 601 are formed on the diffusion layers 607 and 608, respectively.
- a material for the finger electrodes 604p and 604n one kind or two or more kinds of Cu, Sn, Ag, Ni and the like having good electrical conductivity are used.
- FIG. 9A is a schematic diagram showing details of the entire non-light-receiving surface 603 of the back contact solar cell 600 shown in FIG. 8B.
- a positive electrode solder connection pad 701 and a negative electrode solder connection pad 702 are formed in order to connect to an external circuit or another back contact type solar battery cell.
- FIG. 9B is a diagram showing the vicinity of the positive electrode solder connection pad 701 surrounded by a broken line as the A region in FIG. 9A. In the lower part of FIG. 9B, the vicinity of the negative electrode solder connection pad 702 corresponding to the upper positive electrode solder connection pad 701 is shown.
- the positive electrode solder connection pad 701 is a broken line region y shown in FIG. 9B in the region where the finger electrodes 604p are collected, and the finger electrode that collects on the negative electrode solder connection pad 702 shown in FIG. 9A. This is a region surrounded by 604n1 to 604n9 and the cell outer periphery passivation layer 606. As shown in FIG. 9B, the positive electrode solder connection pad 701 is a portion where the finger electrodes 604p are gathered, and one or two kinds of Cu, Sn, Ag, Ni, etc., which are the same material as the finger electrodes 604p and 604n. Used and formed as described above.
- FIG. 10 is a diagram of a connection portion of a joint structure in which two back contact solar cells 600 are electrically connected.
- the positive solder connection pad 701 and the negative solder connection pad 702 are connected by the interconnector 801 using the solder 802.
- solder 802. As a solder material, SnAgCu solder is used.
- the solder 802 is supplied to both the solder connection pads 701 and 702 having different polarities formed in the solar cell 600. Then, after the interconnector 801 is mounted so as to straddle between the solder connection pads 701 and 702, it is heated to the melting point or higher of the solder 802. By this heating, the positive electrode solder connection pad 701 and the negative electrode solder connection pad 702 are joined by the interconnector 801 using the solder 802, and a target voltage and current can be taken out.
- FIG. 11 is a view showing a connecting portion of a joint structure in which two conventional back-contact solar cells described in Patent Document 3 are connected using an interconnector with a solder material.
- solder 852 is supplied to the opposing positive electrode solder connection pad 751 and negative electrode solder connection pad 752 of the two back contact solar cells 650, the interconnector 853 is mounted, and the solder 852 is mounted. Are heated and melted and joined.
- connection work of two back contact solar cells 650 can be simplified. I have to.
- the positive electrode solder connection pad 751 and the negative electrode solder connection pad 752 are wetted with the solder 852 as their forming material in order to be bonded to the solder 852.
- One type or two or more types of metal materials such as Cu, Sn, Ag, and Ni that are good in quality are used. Therefore, when the solder 852 is heated and melted and joined, the solder 852 spreads on the positive solder connection pad 751 and the negative solder connection pad 752.
- the solder 852 is wet and spreads, the positive electrode and the negative electrode are short-circuited when contacting the finger electrode 654n or 654p beyond the cell internal passivation layer 655. Therefore, in order to prevent a short circuit due to the spreading of the solder 852, it is necessary to design the areas of the positive solder connection pad 751 and the negative solder connection pad 752 to be wide in consideration of the spreading of the solder 852.
- the present invention has been made in consideration of the above-described conventional problems, and an object of the present invention is to provide a solar cell, a junction structure, and a method for manufacturing the solar cell with improved power generation efficiency.
- the first aspect of the present invention provides: A silicon substrate; A pair of finger electrodes connected to each of the P-type diffusion layer and the N-type diffusion layer formed on the first surface of the silicon substrate; An internal passivation layer that insulates between the pair of finger electrodes; A connection area for connection with the outside in the gathering part where the finger parts of one of the finger electrodes gather, In the connection area, the solar cell includes a barrier portion formed at the tip of the other finger electrode different from the polarity of the one finger electrode in the connection area.
- each of the pair of finger electrodes has the connection area.
- the barrier portion is a solar cell according to the first aspect of the present invention, wherein the barrier portion has an arc shape, and the tip of the other finger electrode is disposed outside the arc shape.
- the fourth aspect of the present invention is The barrier section is the solar cell according to the first aspect of the present invention, which is formed of at least one material of Si oxide, Si nitride, Ti oxide, and Ti nitride.
- the fifth aspect of the present invention provides A plurality of solar cells of the second invention are provided,
- the solar cells are arranged such that the connection areas of different polarities face each other,
- the adjacent solar cells are joined structures in which portions of the connection area existing between the opposing barrier portions are connected to each other via an interconnect connected by solder.
- the sixth aspect of the present invention provides A method for manufacturing a solar cell in which a pair of finger electrodes connected to each of a P-type diffusion layer and an N-type diffusion layer is formed on a first surface of a silicon substrate, A diffusion layer forming step in which the P-type diffusion layer and the N-type diffusion layer are alternately arranged on the first surface of the silicon substrate to form a comb shape; After the diffusion layer forming step, the outer surface of the gathering portion where the finger portions of at least one of the finger electrodes gather together with the inner passivation layer for insulating the pair of finger electrodes on the first surface of the silicon substrate A passivation layer forming step for forming a barrier portion along the tip of the other finger electrode different from the polarity of the finger electrode in the connection area in the connection area for connection to the connection area; After the passivation layer forming step, an electrode forming step of forming the pair of finger electrodes by attaching a metal to a portion of the first surface of the silicon substrate where the internal passivation layer and the barrier portion
- the present invention it is possible to provide a solar cell, a junction structure, and a solar cell manufacturing method in which the power generation efficiency is improved by reducing the area of the solder connection pad.
- A A schematic top view showing a light receiving surface of a solar battery cell in an embodiment of the present invention
- the figure which compared the area of the solder connection pad of the photovoltaic cell of embodiment of this invention, and the area of the solder connection pad of the conventional back contact type photovoltaic cell A
- FIGS. 1A and 1B are a top view and a bottom view schematically showing a solar battery cell having a barrier portion in the embodiment of the present invention.
- FIG. 1A is a top view showing the light receiving surface 111 of the back contact solar cell according to the present embodiment.
- Solar cell 100 of the present embodiment is formed of a silicon substrate 112.
- Silicon substrate 112 has a thickness of 0.2 mm, an octagonal shape, and adjacent sides of 110.0 mm and 30.0 mm. The sides facing each other are parallel.
- the silicon substrate 112 is derived from the size of the silicon ingot, and the thickness and size of the silicon substrate 112 are not limited to the above sizes.
- FIG.1 (b) is a bottom view which shows the non-light-receiving surface 113 of the photovoltaic cell 100 of this Embodiment.
- the positive electrode solder connection pads 102 and the negative electrode solder connection pads 103 are formed at three positions so as to face the inner side of the long side of the solar battery cell 100.
- finger electrodes 114p that gather on the positive electrode solder connection pad 102 and finger electrodes 114n that gather on the negative electrode solder connection pad are formed in a comb-like shape (see FIG. 8B for a comb-like shape), and the finger electrode 114p And 114n, a cell internal passivation layer 115 as an insulating layer is formed. Further, a barrier portion 101 is formed on each solder connection pad 102 and 103.
- the non-light-receiving surface 113 corresponds to an example of the first surface of the silicon substrate of the present invention.
- the finger electrodes 114p and 114n correspond to an example of a pair of finger electrodes according to the present invention.
- the positive electrode solder connection pad 102 and the negative electrode solder connection pad 103 are both examples of connection areas for connection to the outside of the present invention.
- the portion where the finger electrodes 114p are gathered that is, the portion of the finger electrodes 114p along the upper side in the solar battery cell 100 of FIG. 1B is an example of the gathering portion of the present invention, and the finger electrodes 114n are gathered.
- the cell internal passivation layer 115 corresponds to an example of the internal passivation layer of the present invention.
- FIG. 2 is an enlarged view of the vicinity of the positive electrode solder connection pad 102 of the present embodiment, which is surrounded by a broken line as a B region in FIG. In the lower part of FIG. 1B, the vicinity of the negative electrode solder connection pad 103 corresponding to the upper positive electrode solder connection pad 102 is shown.
- the barrier portion 101 formed on the positive electrode solder connection pad 102 is a cell outer periphery passivation along the tip portion of each finger electrode 114n2, 114n3, 114n4, 114n5, 114n6, 114n7, 114n8 forming the finger electrode 114n. It is formed in an arc shape that opens toward the layer 116.
- the tip portions of the finger electrodes 114n3 to 114n7 are depicted as being aligned, but the tip portions of the finger electrodes 114n3, 114n4, 114n6, and 114n7 may be formed so as to approach the barrier portion 101.
- the cell internal passivation layer 115 is provided to maintain insulation between the finger electrode 114p formed on the P-type diffusion layer 117 and the finger electrode 114n formed on the N-type diffusion layer 118, SiO 2 and SiN, which are insulating materials, are provided. , TiO, TiO 2 and other oxides and nitrides. These oxides and nitrides have poor wettability with solder.
- the barrier portion 101 in the positive electrode solder connection pad 102 is formed of the material that forms the cell internal passivation layer 115 together with the cell internal passivation layer 115, whereby the barrier portion 101 forms the positive electrode. It can suppress that the solder in the solder connection pad 102 spreads out. That is, the barrier portion 101 is formed using at least one material among oxides and nitrides such as SiO 2 , SiN, TiO, and TiO 2 which are insulating materials.
- FIGS. 3A to 3D are process diagrams for forming the barrier portion 101.
- FIGS. 3A to 3D show the respective steps, and show cross-sectional views taken along the line MM of FIG. 1B.
- FIG. 3A is a diagram in which a P-type diffusion layer 117 and an N-type diffusion layer 118 are formed on a silicon substrate 112.
- a mask is applied on the non-light-receiving surface 113 of the silicon substrate 112 to form a P-type diffusion layer 117, and then the mask pattern is changed to form an N-type diffusion layer 118.
- FIG. 3B is a diagram of a process for forming a passivation layer.
- the passivation layer 104 is formed on the entire surface of the non-light-receiving surface 113 so as to cover the silicon substrate 112 and the P-type diffusion layer 117 and the N-type diffusion layer 118 formed on the silicon substrate 112.
- FIG. 3C is a diagram of a process for forming a contact hole.
- a portion of the passivation layer 104 formed in the step shown in FIG. 3B is partially removed to form an electrically connected portion between the P-type diffusion layer 117 and the N-type diffusion layer 118.
- Contact hole 201 is formed.
- a mask is applied to the passivation layer 104 on the non-light-receiving surface 113 side, and etching is performed by a dry method or a wet method. Thereby, the contact hole 201 in which the P-type diffusion layer 117 and the N-type diffusion layer 118 are exposed can be formed.
- 3B remains as the cell outer periphery passivation layer 116, the cell inner passivation layer 115, and the barrier portion 101. As shown in FIG.
- FIG. 3D is a diagram in which the finger electrodes 114 p and 114 n and the solder connection pads 102 and 103 are connected to the P-type diffusion layer 117 and the N-type diffusion layer 118.
- Electrolytic Cu plating is performed on the contact hole 201 where the P-type diffusion layer 117 and the N-type diffusion layer 118 exposed on the non-light-receiving surface 113 of the silicon substrate 112 are exposed, and the positive electrode solder connection pad 102, the finger electrodes 114p and 114n, and the negative electrode solder A connection pad 103 is formed.
- plating is not formed on the cell outer periphery passivation layer 116, the cell inner passivation layer 115 and the barrier portion 101, which are insulating layers, so that these portions formed by the passivation layer 104 are exposed.
- the barrier portion 101 is formed on the finger electrode 114n side of the positive electrode solder connection pad 102 facing the cell outer periphery passivation layer 116 and on the finger electrode 114p side of the negative electrode solder connection pad 103 facing the cell outer periphery passivation layer 116. Can be formed.
- FIG. 3A corresponds to an example of the diffusion layer forming step of the present invention.
- 3B and 3C corresponds to an example of a passivation layer forming step of the present invention.
- the process shown in FIG.3 (d) is an example of the electrode formation step of this invention.
- FIG. 4 is a diagram comparing the area of the solder connection pad of the solar battery cell of the present embodiment and the area of the solder connection pad of the conventional back contact type solar battery cell, and shows a portion of the positive electrode solder connection pad. ing.
- the region z (the region surrounded by the one-dot chain line in FIG. 4) of the positive electrode solder connection pad 102 having the barrier portion 101 is 3.5 mm ⁇ 3.5 mm. Since the area y (area surrounded by the broken line in FIG. 4) of the positive electrode solder connection pad 701 is 10.0 mm ⁇ 10.0 mm, the area of the positive electrode solder connection pad 102 clearly having the barrier portion 101 of the present embodiment is clearly shown. The area of z is decreasing.
- the arc-shaped barrier portion 101 opened to the cell outer periphery passivation layer 116 side is formed along the tip of the finger electrode 114n, and the size of the barrier portion 101 is set to L1: 3.2 mm, L2: 2.5 mm. , L3:
- the area of the solar battery cell 100 of the present embodiment of 0.5 mm is 22326.9 mm 2 , and a total of six locations of the positive electrode solder connection pad 102 and the negative electrode solder connection pad 103 provided at three locations, respectively. Is 73.5 mm 2 , and the total area of the finger electrodes 114 p and 114 n is 17788.0 mm 2 .
- the positive electrode solder connection pads 701 provided at three locations, respectively, The total area of the six locations of the negative electrode solder connection pads 702 is 600 mm 2 , and the total area of the finger electrodes 604p and 604n is 17261.5 mm 2 .
- the area of the finger electrode of solar cell 100 of the present embodiment and that of conventional solar cell 600 are compared, in solar cell 100 of the present embodiment, the area of the finger electrode can be increased by 3%. .
- the area of the P-type diffusion layer 607 in contact with the positive electrode solder connection pad 701 is reduced by reducing the area of the positive electrode solder connection pad 701, and the N-type diffusion layer 118 and the N-type diffusion layer 118 are connected to the portion of the reduced area.
- the n-type diffusion layer 608 in contact with the negative electrode solder connection pad 702 is reduced by reducing the area of the negative electrode solder connection pad 702, and the P type diffusion layer is formed at the reduced area.
- FIG. 5A is a view showing the vicinity of the positive electrode solder connection pad 102 of the joint structure in which the interconnector is connected to the positive electrode solder connection pad 102 of the solar battery cell in the present embodiment.
- the interconnector 121 used in the present embodiment is the same as the interconnector 801 used when joining the conventional solar battery cell 600 shown in FIG.
- the positive electrode solder connection pad 102 which is the z region shown in FIG.
- the arc-shaped barrier portion 101 made of the same material as that of the cell inner passivation layer 115 opened to the cell outer periphery passivation layer 116 side, wetting and spreading during solder melting can be suppressed.
- the area of the P-type diffusion layer 607 that is in contact with the conventional positive electrode solder connection pad 701 can be reduced, and the N-type diffusion layer of the present embodiment is placed at the reduced area.
- the power generation efficiency of the back contact solar cell can be improved.
- FIG. 5B is a view showing the vicinity of the positive electrode solder connection pad 701 of the joint structure in which the interconnector is connected to the positive electrode solder connection pad 701 of the conventional solar battery cell 600.
- the solder 802 wets and spreads on the positive electrode solder connection pad 701 that is the y region shown in FIG. Since the positive electrode solder connection pad 701 is made of Cu by the wettability with the solder 802, the solder 802 is wet and spread when the solder 802 is heated and melted at the time of connection.
- the solar battery cell 100 having the barrier portion 101 according to the present embodiment can clearly suppress the wetting and spreading of the solder and can prevent the finger electrode from being short-circuited.
- Table 1 shows the results of verifying the effects of the difference in the amount of solder and the width of the barrier portion 101 (see L3 in FIG. 4) using the solar battery cell 100 having the configuration of the present embodiment.
- the solder spreads over the barrier portion 101 even if the solder amount is 1 mg, and the solder spread cannot be suppressed.
- the width of the barrier part 101 is 0.2 mm, wetting and spreading can be suppressed when the solder is 1 mg, but wetting and spreading cannot be suppressed when the solder is 5 mg.
- the width of the barrier portion 101 is 0.5 mm or more, it was possible to suppress the wetting and spreading of the solder even when the solder amount was 20 mg.
- the barrier portion 101 can suppress the wetting and spreading of the solder and can prevent the finger electrode from being short-circuited due to the solder connection.
- the shape of the barrier portion 101 has been described as an example of an arc shape opened on the cell outer periphery passivation layer 116 side.
- the concave shape is opened on the cell outer periphery passivation layer 116 side, Similar effects can be obtained with other shapes.
- FIGS. 6A and 6B are diagrams showing the vicinity of the positive electrode solder connection pad of the solar battery cell having another configuration of the present embodiment in which the barrier portion has another shape.
- symbol is used for the same component as FIG.
- barrier portion 105 shown in FIG. 6A and the barrier portion 106 shown in FIG. 6B surround the interconnector 121 to be connected and have a gap with the interconnector 121, The same effect as the barrier part 101 can be obtained.
- the shape of the barrier portion may be one continuous shape like the barrier portion 101 in FIG. 2 or the barrier portion 105 in FIG. 6A, or like the barrier portion 106 in FIG. A plurality of shapes may be combined.
- the barrier unit 106 shown in FIG. 6B is divided into three parts, and has a central part 106a and parts 106b arranged on the left and right sides thereof. The central portion 106a is disposed on the inner side, and the left and right portions 106b are disposed on the outer side.
- a portion where the connection between the inner side and the outer side of the barrier portion 106 in the positive electrode solder connection pad 102 is interrupted is the barrier portion 101.
- the barrier portion 105 which is advantageous in terms of connection resistance between the positive electrode solder connection pad 102 and the other finger electrode 114p.
- the barrier portion 106 having a central portion arranged outside the left and right portions is used.
- the central portion 107a is the left and right portions 107b.
- a barrier unit 107 disposed on the inner side may be used.
- barrier portions 106 and 107 may be divided into four or more parts, and may be alternately arranged on the inner side and the outer side.
- the cell inner passivation layer 115 and the cell outer periphery passivation layer 116 are formed before the positive electrode solder connection pad 102 and the negative electrode solder connection pad 103 are formed.
- the barrier portion 101 is simultaneously formed has been described.
- the barrier portion may be formed after the positive electrode solder connection pad 102 and the negative electrode solder connection pad 103 are formed.
- FIG. 7 shows a cross-sectional view of the solar battery cell when the barrier portion is formed after the solder connection pad is formed.
- the cross section shown in FIG. 7 shows a cross section of a portion corresponding to the MM cross section of FIG.
- symbol is used for the same component as FIG.3 (d).
- the barrier portion is formed after the step of forming the finger electrode 134n, the positive electrode solder connection pad 132, and the negative electrode solder connection pad 133 described in FIG. 3D, as shown in FIG. Formed on the positive electrode solder connection pad 132 and the negative electrode solder connection pad 133.
- the barrier portion 131 may be formed of the same material as the cell inner passivation layer 115 and the cell outer periphery passivation layer 116, or a tape whose surface is formed of these materials is connected to the positive electrode solder connection pad 132 and the negative electrode solder connection. You may make it stick on the pad 133.
- FIG. 1 the barrier portion 131 may be formed of the same material as the cell inner passivation layer 115 and the cell outer periphery passivation layer 116, or a tape whose surface is formed of these materials is connected to the positive electrode solder connection pad 132 and the negative electrode solder connection. You may make it stick on the pad 133.
- the positive electrode solder connection pad 132 and the negative electrode solder connection pad 133 do not have a portion that is interrupted between the inner side and the outer side of the barrier portion 131, and therefore, between the solder connection pad and the finger electrode (for example, the finger electrode 134 n And the other portion of the negative electrode solder connection pad 133).
- the height of the barrier part 131 to be formed can be changed, and the barrier part 131 can be made high. It is possible to reduce the width of the barrier portion 131 (L3 in FIG. 4) by increasing the barrier portion 131.
- the position where the barrier portion is provided on the solder connection pad can be appropriately adjusted depending on the joining strength and the size of the interconnector.
- the solar battery cell according to the present embodiment can suppress the spread of solder on the solder connection pad by providing the solder connection pad with the barrier portion, and can prevent the finger electrode from being short-circuited by the solder. .
- the areas of the positive and negative electrode solder connection pads and the P-type and N-type diffusion layers in contact with the solder connection pads can be reduced, and the P-type diffusion layer and the P-type diffusion layer are connected to the areas where the areas are reduced. Since the finger electrode, the N-type diffusion layer, and the finger electrode connected to the N-type diffusion layer can be formed, the power generation efficiency of the back contact solar cell can be improved.
- the solar battery cell of the present invention can improve the power generation efficiency of the back contact solar battery cell and can be applied to a solar battery module.
- the solar cell, the junction structure, and the solar cell manufacturing method according to the present invention have the effect of reducing the area of the solder connection pad to improve the power generation efficiency, and the back contact solar cell and solar cell It is useful as a manufacturing method of a junction structure and a solar battery cell using.
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Abstract
Description
シリコン基板と、
前記シリコン基板の第1の面に形成された、P型拡散層およびN型拡散層のそれぞれに接続した一対のフィンガー電極と、
前記一対のフィンガー電極間を絶縁する内部パッシベーション層と、
一方の前記フィンガー電極のフィンガー部が集結する集結部における、外部との接続のための接続エリアと、
前記接続エリア内において、前記接続エリアの前記一方のフィンガー電極の極性とは異なる他方の前記フィンガー電極の先端に形成されたバリアー部とを備えた、太陽電池セルである。
前記一対のフィンガー電極のそれぞれに、前記接続エリアがある、第1の本発明の太陽電池セルである。
前記バリアー部は、円弧形状をしており、前記円弧形状の外側に、前記他方のフィンガー電極の先端が配置されている、第1の本発明の太陽電池セルである。
前記バリアー部は、Si酸化物、Si窒化物、Ti酸化物およびTi窒化物の少なくとも1種類の材料で形成されている、第1の本発明の太陽電池セルである。
第2の本発明の太陽電池セルを、複数備え、
前記太陽電池セルは、互いに異なる極性の前記接続エリアが対向するように配置されており、
隣接する前記太陽電池セルは、対向するそれぞれの前記バリアー部の間に存在する前記接続エリアの部分同士が、はんだで接続されるインターコネクトを介して連結されている、接合構造体である。
シリコン基板の第1の面に、P型拡散層およびN型拡散層のそれぞれに接続した一対のフィンガー電極が形成された太陽電池セルの製造方法であって、
前記シリコン基板の第1の面に、前記P型拡散層およびN型拡散層を交互に配列してそれぞれ櫛型に形成する拡散層形成ステップと、
前記拡散層形成ステップの後、前記シリコン基板の第1の面に、前記一対のフィンガー電極間を絶縁するための内部パッシベーション層と共に、少なくとも一方の前記フィンガー電極のフィンガー部が集結する集結部における外部との接続のための接続エリアに、前記接続エリアの前記フィンガー電極の極性とは異なる他方の前記フィンガー電極の先端に沿ったバリアー部を形成する、パッシベーション層形成ステップと、
前記パッシベーション層形成ステップの後、前記シリコン基板の第1の面の、前記内部パッシベーション層および前記バリアー部が形成されていない部分に金属を付着させて、前記一対のフィンガー電極を形成する電極形成ステップとを備えた、太陽電池セルの製造方法である。
図1(a)および(b)は、本発明の実施の形態における、バリアー部を有した太陽電池セルを模式的に示した上面図および底面図である。
101 バリアー部
102 正極はんだ接続パッド
103 負極はんだ接続パッド
104 パッシベーション層
105 バリアー部
106 バリアー部
111 受光面
112 シリコン基板
113 非受光面
114n、114p、114n2~114n8 フィンガー電極
115 セル内部パッシベーション層
116 セル外周パッシベーション層
117 P型拡散層
118 N型拡散層
121 インターコネクタ
122 はんだ
131 バリアー部
132 正極はんだ接続パッド
133 負極はんだ接続パッド
134n フィンガー電極
201 コンタクトホール
600、650 太陽電池セル
601 受光面
602 シリコン基板
603 非受光面
604n、604p、604n1~604n9、654n、654p フィンガー電極
605、655 セル内部パッシベーション層
606 セル外周パッシベーション層
607 P型拡散層
608 N型拡散層
701、751 正極はんだ接続パッド
702、752 負極はんだ接続パッド
801 インターコネクタ
802、852 はんだ
803、853 インターコネクタ
Claims (6)
- シリコン基板と、
前記シリコン基板の第1の面に形成された、P型拡散層およびN型拡散層のそれぞれに接続した一対のフィンガー電極と、
前記一対のフィンガー電極間を絶縁する内部パッシベーション層と、
一方の前記フィンガー電極のフィンガー部が集結する集結部における、外部との接続のための接続エリアと、
前記接続エリア内において、前記接続エリアの前記一方のフィンガー電極の極性とは異なる他方の前記フィンガー電極の先端に形成されたバリアー部とを備えた、太陽電池セル。 - 前記一対のフィンガー電極のそれぞれに、前記接続エリアがある、請求項1に記載の太陽電池セル。
- 前記バリアー部は、円弧形状をしており、前記円弧形状の外側に、前記他方のフィンガー電極の先端が配置されている、請求項1に記載の太陽電池セル。
- 前記バリアー部は、Si酸化物、Si窒化物、Ti酸化物およびTi窒化物の少なくとも1種類の材料で形成されている、請求項1に記載の太陽電池セル。
- 請求項2に記載の太陽電池セルを、複数備え、
前記太陽電池セルは、互いに異なる極性の前記接続エリアが対向するように配置されており、
隣接する前記太陽電池セルは、対向するそれぞれの前記バリアー部の間に存在する前記接続エリアの部分同士が、はんだで接続されるインターコネクトを介して連結されている、接合構造体。 - シリコン基板の第1の面に、P型拡散層およびN型拡散層のそれぞれに接続した一対のフィンガー電極が形成された太陽電池セルの製造方法であって、
前記シリコン基板の第1の面に、前記P型拡散層およびN型拡散層を交互に配列してそれぞれ櫛型に形成する拡散層形成ステップと、
前記拡散層形成ステップの後、前記シリコン基板の第1の面に、前記一対のフィンガー電極間を絶縁するための内部パッシベーション層と共に、少なくとも一方の前記フィンガー電極のフィンガー部が集結する集結部における外部との接続のための接続エリアに、前記接続エリアの前記フィンガー電極の極性とは異なる他方の前記フィンガー電極の先端に沿ったバリアー部を形成する、パッシベーション層形成ステップと、
前記パッシベーション層形成ステップの後、前記シリコン基板の第1の面の、前記内部パッシベーション層および前記バリアー部が形成されていない部分に金属を付着させて、前記一対のフィンガー電極を形成する電極形成ステップとを備えた、太陽電池セルの製造方法。
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CN201280020107.1A CN103503157A (zh) | 2011-04-26 | 2012-04-26 | 太阳能电池单元、接合结构体、及太阳能电池单元的制造方法 |
US14/113,229 US20140041707A1 (en) | 2011-04-26 | 2012-04-26 | Solar battery cell, junction structure, and solar battery cell fabrication method |
JP2013511936A JP5627054B2 (ja) | 2011-04-26 | 2012-04-26 | 太陽電池セル、接合構造体、および太陽電池セルの製造方法 |
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KR101816155B1 (ko) * | 2017-02-13 | 2018-01-08 | 엘지전자 주식회사 | 태양 전지 패널 |
WO2022107542A1 (ja) * | 2020-11-18 | 2022-05-27 | 株式会社カネカ | 太陽電池セル及び太陽電池モジュール |
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USD765590S1 (en) * | 2013-12-11 | 2016-09-06 | Solaero Technologies Corp. | Solar cell |
USD765024S1 (en) * | 2013-12-11 | 2016-08-30 | Solaero Technologies Corp. | Solar cell |
EP3660927B1 (en) * | 2018-11-30 | 2021-11-10 | CSEM Centre Suisse D'electronique Et De Microtechnique SA | Photovoltaic module |
CN112349791B (zh) * | 2020-10-27 | 2023-11-28 | 浙江晶科能源有限公司 | 太阳能电池及其制备方法 |
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- 2012-04-26 CN CN201280020107.1A patent/CN103503157A/zh active Pending
- 2012-04-26 US US14/113,229 patent/US20140041707A1/en not_active Abandoned
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US20140041707A1 (en) | 2014-02-13 |
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CN103503157A (zh) | 2014-01-08 |
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