WO2012140557A3 - Hétérostructure semi-conductrice et cellule photovoltaique comprenant une telle hétérostructure. - Google Patents

Hétérostructure semi-conductrice et cellule photovoltaique comprenant une telle hétérostructure. Download PDF

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Publication number
WO2012140557A3
WO2012140557A3 PCT/IB2012/051720 IB2012051720W WO2012140557A3 WO 2012140557 A3 WO2012140557 A3 WO 2012140557A3 IB 2012051720 W IB2012051720 W IB 2012051720W WO 2012140557 A3 WO2012140557 A3 WO 2012140557A3
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WO
WIPO (PCT)
Prior art keywords
heterostructure
superlattice
region
layers
photovoltaic cell
Prior art date
Application number
PCT/IB2012/051720
Other languages
English (en)
Other versions
WO2012140557A2 (fr
WO2012140557A8 (fr
Inventor
Régis Andre
Joël BLEUSE
Henri Mariette
Original Assignee
Centre National De La Recherche Scientifique
Commisariat A L'energie Atomique Et Aux Energies Alternatives
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National De La Recherche Scientifique, Commisariat A L'energie Atomique Et Aux Energies Alternatives filed Critical Centre National De La Recherche Scientifique
Priority to CN201280022833.7A priority Critical patent/CN103688366B/zh
Priority to US14/111,029 priority patent/US20140026937A1/en
Priority to EP12720606.8A priority patent/EP2697833A2/fr
Publication of WO2012140557A2 publication Critical patent/WO2012140557A2/fr
Publication of WO2012140557A3 publication Critical patent/WO2012140557A3/fr
Publication of WO2012140557A8 publication Critical patent/WO2012140557A8/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Hétérostructure comprenant une première région (R1) en un premier matériau semi-conducteur avec un dopage de type n, une deuxième région (R2) en un deuxième matériau semi-conducteur avec un dopage de type p et, entre lesdites première et deuxième régions, un super-réseau (SR) de type Il formé par une alternance de couches (C1, C2) d'un troisième et d'un quatrième matériau semi-conducteur, lesdites couches présentant des épaisseurs suffisamment faibles pour que les porteurs soient délocalisés à l'intérieur dudit super-réseau formant au moins une mini-bande d'électrons (MBe) et une mini-bande de trous (MBh), les interfaces entre la première région et le super-réseau, entre les couches du super-réseau, et entre le super-réseau et la deuxième région étant parallèles entre elles. Cellule photovoltaïque comprenant une telle hétérostructure en tant qu'élément actif. Panneau solaire comprenant une association de telles cellules photovoltaïques.
PCT/IB2012/051720 2011-04-11 2012-04-06 Hétérostructure semi-conductrice et cellule photovoltaique comprenant une telle hétérostructure. WO2012140557A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201280022833.7A CN103688366B (zh) 2011-04-11 2012-04-06 半导体异质结构和包括该异质结构的光伏电池
US14/111,029 US20140026937A1 (en) 2011-04-11 2012-04-06 Semiconductor Heterostructure and Photovoltaic Cell Including Such A Heterostructure
EP12720606.8A EP2697833A2 (fr) 2011-04-11 2012-04-06 Hétérostructure semi-conductrice et cellule photovoltaique comprenant une telle hétérostructure.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1153146 2011-04-11
FR1153146A FR2973945B1 (fr) 2011-04-11 2011-04-11 Heterostructure semi-conductrice et cellule photovoltaïque comprenant une telle heterostructure

Publications (3)

Publication Number Publication Date
WO2012140557A2 WO2012140557A2 (fr) 2012-10-18
WO2012140557A3 true WO2012140557A3 (fr) 2013-04-18
WO2012140557A8 WO2012140557A8 (fr) 2014-03-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2012/051720 WO2012140557A2 (fr) 2011-04-11 2012-04-06 Hétérostructure semi-conductrice et cellule photovoltaique comprenant une telle hétérostructure.

Country Status (5)

Country Link
US (1) US20140026937A1 (fr)
EP (1) EP2697833A2 (fr)
CN (1) CN103688366B (fr)
FR (1) FR2973945B1 (fr)
WO (1) WO2012140557A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11158754B1 (en) * 2013-08-09 2021-10-26 Hrl Laboratories, Llc Back-to-back dual band p-CB-n
US9755932B1 (en) * 2014-09-26 2017-09-05 Juniper Networks, Inc. Monitoring packet residence time and correlating packet residence time to input sources
CN106057931B (zh) * 2016-07-05 2023-07-07 安阳师范学院 一种大开路电压纳米异质结太阳能电池及制备方法
US11183655B2 (en) * 2016-08-31 2021-11-23 Nissan Motor Co., Ltd. Photovoltaic device
CN107910249B (zh) * 2017-11-15 2019-07-05 苏州大学 制备二维面内异质结的方法
CN109768102A (zh) * 2018-12-27 2019-05-17 浙江师范大学 一种晶体硅异质结太阳能电池及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4953955A (en) * 1987-01-15 1990-09-04 California Institute Of Technology Photovoltaic driven multiple quantum well optical modulator
JPH05273609A (ja) * 1992-03-26 1993-10-22 Nippondenso Co Ltd 量子井戸を用いた光吸収制御半導体装置
US5321275A (en) * 1990-02-26 1994-06-14 Canon Kabushiki Kaisha Photodetector and photodetection method
US5851310A (en) * 1995-12-06 1998-12-22 University Of Houston Strained quantum well photovoltaic energy converter

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6864552B2 (en) * 2003-01-21 2005-03-08 Mp Technologies, Llc Focal plane arrays in type II-superlattices
JP4664725B2 (ja) * 2005-04-20 2011-04-06 日本オプネクスト株式会社 半導体レーザ素子
US20070126021A1 (en) * 2005-12-06 2007-06-07 Yungryel Ryu Metal oxide semiconductor film structures and methods
TWI285436B (en) * 2005-12-30 2007-08-11 Ind Tech Res Inst Solar cell with superlattice structure and fabricating method thereof
JP4996869B2 (ja) * 2006-03-20 2012-08-08 株式会社日立製作所 半導体レーザ
US20100006143A1 (en) * 2007-04-26 2010-01-14 Welser Roger E Solar Cell Devices
US7915521B2 (en) * 2007-10-10 2011-03-29 The Trustees Of Princeton University Type II quantum dot solar cells
WO2011011864A1 (fr) * 2009-07-29 2011-02-03 Cyrium Technologies Incorporated Cellule solaire et son procédé de fabrication
US8866005B2 (en) * 2008-10-17 2014-10-21 Kopin Corporation InGaP heterojunction barrier solar cells

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4953955A (en) * 1987-01-15 1990-09-04 California Institute Of Technology Photovoltaic driven multiple quantum well optical modulator
US5321275A (en) * 1990-02-26 1994-06-14 Canon Kabushiki Kaisha Photodetector and photodetection method
JPH05273609A (ja) * 1992-03-26 1993-10-22 Nippondenso Co Ltd 量子井戸を用いた光吸収制御半導体装置
US5851310A (en) * 1995-12-06 1998-12-22 University Of Houston Strained quantum well photovoltaic energy converter

Also Published As

Publication number Publication date
FR2973945A1 (fr) 2012-10-12
CN103688366B (zh) 2016-04-27
CN103688366A (zh) 2014-03-26
FR2973945B1 (fr) 2013-05-10
EP2697833A2 (fr) 2014-02-19
WO2012140557A2 (fr) 2012-10-18
US20140026937A1 (en) 2014-01-30
WO2012140557A8 (fr) 2014-03-13

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