WO2012139527A1 - 一种半导体处理装置 - Google Patents

一种半导体处理装置 Download PDF

Info

Publication number
WO2012139527A1
WO2012139527A1 PCT/CN2012/074053 CN2012074053W WO2012139527A1 WO 2012139527 A1 WO2012139527 A1 WO 2012139527A1 CN 2012074053 W CN2012074053 W CN 2012074053W WO 2012139527 A1 WO2012139527 A1 WO 2012139527A1
Authority
WO
WIPO (PCT)
Prior art keywords
plate
chamber
column
processing apparatus
semiconductor processing
Prior art date
Application number
PCT/CN2012/074053
Other languages
English (en)
French (fr)
Inventor
温子瑛
Original Assignee
无锡华瑛微电子技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201110094233.9A external-priority patent/CN102737955B/zh
Priority claimed from CN201110094366.6A external-priority patent/CN102738034B/zh
Priority claimed from CN201110094239.6A external-priority patent/CN102738031B/zh
Priority claimed from CN201110094306.4A external-priority patent/CN102738033B/zh
Priority claimed from CN201110094250.2A external-priority patent/CN102738032B/zh
Application filed by 无锡华瑛微电子技术有限公司 filed Critical 无锡华瑛微电子技术有限公司
Priority to US14/111,859 priority Critical patent/US10121681B2/en
Priority to EP12770708.1A priority patent/EP2693461B1/en
Publication of WO2012139527A1 publication Critical patent/WO2012139527A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece

Definitions

  • BACKGROUND OF THE INVENTION The Field of the Invention This invention relates to the field of surface treatment of semiconductor wafers or similar workpieces, and more particularly to a device for chemically processing semiconductor wafer surfaces, as well as cleaning, etching, and other processes.
  • BACKGROUND OF THE INVENTION Wafers are carriers for the production of integrated circuits. Wafers that need to be prepared in actual production have flat, ultra-clean surfaces, and existing methods for preparing ultra-clean wafer surfaces can be divided into two categories: wet processing such as immersion and jetting techniques, and the like. Dry process based on chemical vapor and plasma technology. Among them, the wet process is a widely used method in the prior art, and the wet process usually consists of a series of steps of immersing or spraying a wafer with a suitable chemical solution.
  • the prior art includes a device for ultra-cleaning wafers using a wet process.
  • a microchamber capable of closely receiving and processing a semiconductor wafer is formed in the apparatus, the microcavity may be in an open state for loading and unloading a semiconductor wafer, or may be in a closed state for processing of a semiconductor wafer, Chemicals and other fluids can be introduced into the microchamber during processing.
  • the open state and the closed state are achieved by driving the two driving devices included in the device to respectively drive the relative movements of the upper and lower working faces constituting the microchamber.
  • the above device has the following disadvantages: First, the structure in which the two driving devices respectively drive the upper and lower working surfaces of the micro-chamber in the device is complicated, if The same effect can be achieved by a driving device driving the upper working surface or the lower working surface of the micro-chamber; secondly, for different size semiconductor wafers, the corresponding micro-chamber components of different sizes or different structures need to be replaced during processing. It is very inconvenient to disassemble the entire assembly when replacing the micro-chamber assembly. Third, the relevant leakage collection mechanism in the device when the micro-chamber is not tightly sealed or the chemical flowing through the pipeline of the chemical agent leaks.
  • the upper and lower working surfaces are relatively moved by a plurality of stainless steel metal columns running through the upper and lower working surfaces, and the columns are easily subjected to high temperature generated during chemical processing. And/or corrosive gases corrode and become a source of metal contamination. Furthermore, the existing components of the upper and lower working faces that are sleeved on the uprights are welded together, which is not easy to install, debug and disassemble, and the manufacturing process is complicated, and the quality control of the process is difficult to implement.
  • An object of the present invention is to provide a semiconductor processing apparatus which has a simpler structure, can more easily replace a micro-chamber assembly, can more flexibly set a micro-chamber position, and can collect leaks more safely and effectively. Chemical treatment of liquids.
  • a semiconductor processing apparatus includes: a microchamber for closely housing and processing a semiconductor wafer, the microchamber including an upper chamber portion forming an upper working surface and Forming a lower chamber portion of the lower working surface, the upper chamber portion and the lower chamber portion being operable at an open position for loading and/or removing the semiconductor wafer and for closely receiving the semiconductor crystal Relative movement between the closed positions of the circle.
  • the semiconductor wafer is mounted between the upper working surface and the lower working surface, and an inner wall of the micro chamber is formed with a flow of the processing fluid.
  • the void, the upper chamber portion and/or the lower chamber portion includes at least one inlet for processing fluid to enter the microchamber and at least one outlet for processing fluid to exit the microchamber.
  • the lower chamber portion includes a lower chamber plate forming the lower working surface and a lower box device accommodating the lower chamber plate, the lower box device including a side opening without a cover a cavity from which the lower chamber plate can slide into or out of the capless cavity.
  • the surface of the capless cavity contains a flow guiding groove that directs the fluid to ultimately flow in the same direction.
  • the flow guiding groove includes a plurality of slope faces arranged on the lower surface of the capless cavity and having the same inclination angle and juxtaposed to each other, and the slope bottom of the slope face is located at the side opening.
  • edges of the upper chamber portion and the lower chamber portion include corresponding column holes, and one of the upper chamber portion and the lower chamber portion may extend through the The guiding of the column device of the column hole moves between the open position and the closed position.
  • the semiconductor processing apparatus further includes a position correcting device that can pressurize the upper chamber plate such that portions of the working surface of the upper chamber portion and the semiconductor The gap between the wafers conforms to a predetermined width.
  • the column device includes a column and a sleeve sleeved on an outer surface of the column, the column device includes a column and a sleeve sleeved on an outer surface of the column, the column
  • the column device In order to contain a stepped structure with a thread, the relative position of each plane can be accurately determined by the cooperation of the nut and the step, which is simple and flexible.
  • the semiconductor processing apparatus of the present invention only needs to drive one of the upper working surface or the lower working surface by using one driving device, which not only makes the invention have a simpler structure, but also facilitates the user.
  • the operation at the time of installation and disassembly, and the position and shape correction module of the present invention can realize the position of adjusting the micro chamber or the relative position between the upper chamber plate and the lower chamber plate;
  • the present invention employs a pull-out upper and lower box means for accommodating upper and lower chamber plates, thereby making it easy to replace the chamber plates of different sizes; or
  • the bottom surface of the lower box device used in the present invention comprises a plurality of slope surfaces having the same inclination angle and inclined manner and juxtaposed to each other, and the leaked chemical treatment liquid or other fluid can be collected on one side of the lower box device or In one place, only one sensor is needed to monitor the occurrence of the leak.
  • FIG. 1 is a perspective view of a semiconductor processing apparatus in accordance with an embodiment of the present invention
  • FIG. 2 is a front elevational view of the semiconductor processing apparatus of the present invention in one embodiment
  • Figure 4 is a perspective view of the first intermediate plate of the present invention in one embodiment
  • Figure 5 is a perspective view showing the second intermediate plate of the present invention in an embodiment
  • Figure 6 is a top plan view of the upper plate in one embodiment of the present invention
  • Figure 7 is a perspective view of the lower case device of the present invention in one embodiment
  • Figure 8 is a schematic view showing the assembly of the lower chamber plate in the embodiment of the present invention with the lower case device;
  • Figure 9 is a perspective view of the reverse side of the insert in the embodiment of the present invention;
  • Figure 10 is a perspective view showing the upper box device of the present invention in one embodiment
  • Figure 11 is a top plan view of the upper cartridge device of the present invention in one embodiment
  • Figure 12 is a top plan view of the separator of the present invention in one embodiment
  • Figure 13 is a front elevational view showing the column of the present invention in one embodiment
  • Figure 14 is a cross-sectional view showing the sleeve of the present invention in one embodiment
  • Figure 15 is a bottom plan view of the calibration plate of the present invention in one embodiment
  • Figure 16 is a perspective view of the top plate of the present invention in one embodiment. Detailed ways The present invention will be further described in detail with reference to the drawings and specific embodiments.
  • the semiconductor processing apparatus 100 includes a position correcting device 110, a microchamber module 120, a driving device 130, and a column device 140.
  • Each of the first three modules is fixed, supported or guided by four mutually parallel column devices 140, and the drive device 130, the microchamber module 120 and the bottom up device are respectively along the column device 140.
  • the microchamber module 120 includes a microchamber that processes a semiconductor wafer, the microchamber including an upper chamber plate 122 and a lower chamber plate 126, the upper chamber plate 122 being supported by the upper cassette device 124. And being constrained by the position correcting device 1 10 located above it in the upper box device 124; accordingly, the lower chamber plate 126 is supported by the lower box device 128, which in turn is driven by the lower portion 130 support and drive.
  • the driving device 130 can drive the lower box device 128 to move relative to the upper box device 124 according to the column device 140, so that the upper box device can be opened or closed when the semiconductor wafer needs to be loaded and removed.
  • chemical reagents and other fluids may be introduced into the interior of the microcavity for chemical cleaning, etching, and other processing of the semiconductor wafer therein, and after processing, the Chemical reagents and other fluids are drawn out of the microchamber.
  • the driving device 130 includes a bottom plate 132 from the bottom to the top, a first intermediate plate 134 located above the bottom plate, and a second intermediate plate 136 located above the first intermediate plate 134. And an upper plate 138 located above the second intermediate plate 136.
  • a cavity formed by the bottom plate 132, the first intermediate plate 134, the second intermediate plate 136, and the upper plate 138 also includes a driver (not shown).
  • the driver When the driver generates an upward driving force, the second intermediate plate 136 and the upper plate 138 drive the lower box device 128 and the lower chamber above the upper plate 138 along the guiding of the column device 140.
  • the plate 126 is moved upwards to cause the microchamber to complete the transition from the open state to the closed state.
  • FIG. 3 is a top plan view of the bottom plate 132 in one embodiment 300.
  • the bottom plate 300 has a square shape, and includes four column holes 302 corresponding to the column device 140 at four corners of the bottom plate 300, and the third nut 153 and the column device 140 are located at the four positions.
  • the hexagonal bottom 141 (see Fig. 2) below the bottom plate 300 is fastened together.
  • the bottom plate 300 also faces the lower side
  • a rib 304 is provided on a diagonal line of the bottom plate 300.
  • the rib 304 has a rectangular cross section, and the rib 304 provides high strength support for the bottom plate.
  • the central portion of the bottom plate 300 further includes a circular perforation 306 and two threaded perforations 308 for other equipment, lines or devices to pass through; the two threaded perforations 308 can be used to join screws
  • the components are fixed below the drive.
  • the bottom plate 300 is further formed with three parallel rectangular cutouts 309, respectively.
  • the first intermediate plate 400 is also in the shape of a square, and also includes four column holes 402 corresponding to the column device 140 at the four corners of the first intermediate plate 400, and passes through the bottom plate 300.
  • the third nut 153 is fastened with a hexagonal bottom 141 (see FIG. 1) of the upright device 140 below the bottom plate 300.
  • the upward side of the first intermediate plate 400 extends in a direction perpendicular to the plane of the first intermediate plate 400 to form a circular first cylindrical wall 404 having a volume slightly larger than the size of the driver to accommodate the driver.
  • the first intermediate plate 400 further includes a circular through hole 406 and two threaded through holes 408 corresponding to the bottom plate 300 near the central portion, the circular through holes 406 being used for other equipment, pipelines or devices to pass through; Two threaded perforations 408 can be used to secure the underside of the drive in conjunction with screws or the like.
  • the four sides of the first intermediate plate 400 are also respectively formed with three parallel rectangular through holes 409.
  • FIG. 5 is a perspective view of the reverse side of the second intermediate plate 136 in an embodiment 500.
  • the second intermediate plate 500 has a structure that is substantially symmetrical to the first intermediate plate 400.
  • the four corners of the second intermediate plate 500 include four column holes 502 corresponding to the column device 140, which can be moved up or down along the guidance of the column device 140.
  • the downward side of the second intermediate plate 500 (that is, the upward side in the drawing) extends in a direction perpendicular to the plane of the second intermediate plate 500 to form a circular shape having a volume slightly larger than the size of the driver.
  • the second barrel wall 504 houses the driver.
  • the diameter of the second cylinder wall 504 should be slightly larger or slightly smaller than the diameter of the first cylinder wall 404 of the first intermediate plate 400 such that the second intermediate plate 500 moves toward the first intermediate plate 400.
  • the barrel wall 504 can include or be embedded in the first barrel wall 404.
  • the second intermediate plate 500 further includes two threaded perforations 508 adjacent the central portion, and the two threaded perforations 508 can be used to secure the upper portion of the drive in conjunction with screws or the like.
  • the four sides of the second intermediate plate 500 of the second intermediate plate 500 are further formed with three parallel rectangular perforations 509, respectively.
  • FIG. 6 is a top plan view of the upper plate 138 in one embodiment 600.
  • the upper plate 600 The shape corresponds to the bottom plate 300 having a square shape, and the four corners of the upper plate 600 include four column holes 602 corresponding to the column device 140, and the upper plate 600 can be directed upward or upward along the guide of the column device 140. Move down.
  • the center of the upper plate 600 further includes two perforations 608 juxtaposed.
  • the through hole 608 can be fixed above the driver in combination with a screw or the like.
  • the four sides of the upper plate 600 are also respectively formed with three parallel rectangular notches 609.
  • the bottom plate 132, the first intermediate plate 134, the second intermediate plate 136 and the upper plate 138 form a cylindrical cavity, the inner space of which can accommodate a driver, which is in the prior art. More mature products, such as pneumatic drives, similarly, other drives such as mechanical drives, electric drives or hydraulic drive.
  • the driver when the driver generates an upward driving force, the second intermediate plate 136 and the upper plate 138 are driven to be moved upward by the driving force of the driver; when the driver generates a downward driving When the force is applied, the second intermediate plate 136 and the upper plate 138 are driven to be moved downward by the driving force of the driver and the self-gravity.
  • the bottom plate 132 and the first intermediate plate 134 can be integrally formed into a bottom plate; the second intermediate plate 136 and the upper plate 138 can be combined to form a top plate. That is to say, the driving device 130 is not limited to the embodiment described in the above embodiments, as long as the same or better effects can be achieved.
  • the microchamber module 120 includes, in order from bottom to top, a lower cassette device 128, a lower chamber plate 126 supported by the lower cassette unit 128, a partition 125, an upper cassette unit 124 above the partition 125, and supported by the upper cassette unit 124.
  • the lower casing device 128 and the lower chamber plate 126 supported by the lower casing device 128 are movable upward or downward along the guidance of the column device 140 under the driving of the driving device 130.
  • FIG. 7 is a perspective view of the lower case device 128 in one embodiment 700.
  • the lower box device 700 is generally in the shape of a coverless box having a square bottom surface.
  • Four column holes 702 corresponding to the column device 140 are included at the four corners of the lower box device 700.
  • the lower casing device 700 has three inclined angles on the one side with respect to the upper casing device 124, and the same inclination, side by side, and the same width
  • the ramp face 704, here including the bottom surface of the ramp face, is designed to collect chemicals or other fluids that drip from the lower chamber plate located above it. With the ramp face described above, the chemical or other fluid may eventually flow to the bottom of the ramp face 704.
  • the wall portion of the odd-numbered slope surface 704 facing the bottom of the box is missing, and the inner wall portions of the other three wall 706 which are in contact with the bottom surface 701 are recessed horizontally to form a recess 707.
  • the lower chamber plate 126 can be horizontally slid into the lower box device 700 and supported by the bottom plate 701 via the missing box wall portion along the recess 707 in the other box wall 706.
  • the lower chamber plate 126 when the lower chamber plate 126 is located in the lower casing device 700, it can also slide along the groove 707 to slide the lower casing device 700 out of the missing wall portion.
  • rectangular cutouts 708 are formed on the four sides of the lower case device 700.
  • FIG 8 there is shown a schematic view of the assembly of the lower chamber panel 126 in an embodiment 800 with the lower cartridge assembly 700.
  • the lower chamber plate 800 is generally integrally formed.
  • the lower chamber plate 800 includes a lower portion 820 and an upper portion 840 above the lower portion 820.
  • the size and edge thickness of the lower portion 820 correspond to the distance between the wall 706 of the lower box device 700 and the width of the recess 707, respectively.
  • the lower chamber plate 800 can be slid along the recess 707 in the wall 706 of the lower casing device 700.
  • the upper surface 842 of the upper portion 840 is the lower working surface of the microchamber.
  • the lower chamber panel 800 is slidable into or out of the pull-out manner for ease of loading and removal. Since the size of the semiconductor wafer is divided into 4 inches, 6 inches, 8 inches, 12 inches, etc., in order to achieve better processing results, it is necessary to design different internal structures of the micro chambers for different processing processes. If there is an image on the surface of the wafer, the cleaning microcavity or the chemical mechanical polishing of the wafer surface cleans the microcavity; therefore, the wafer can be replaced according to the different size of the wafer, or the matching lower chamber plate can be replaced according to the process requirements. .
  • FIG. 1 A reverse perspective view of the insert 160 in one embodiment 900 is shown.
  • the two sides of the insert 900 include ribs 902 corresponding to the grooves 707 of the lower box device 700, and the bottom of the insert 900, that is, the upper surface of the insert 900, includes a convex corresponding to the even slope surface.
  • a recess 906, which is 904 and an odd sloped surface, is configured to correspond to the bottom surface of the lower box device 700.
  • the insert 900 further includes a block 908 on the bottom surface, the block 908 may be a wall corresponding to the slope of the sloped surface 704 of the lower case device 700 when the insert 900 is engaged in the lower case device 700. The phases are engaged, thereby preventing the insert 900 from coming off the lower cartridge device 700.
  • the insert 900 can be lifted up first and the insert 900 can be withdrawn from the lower cassette unit 700.
  • the lower chamber plate 800 can be secured within the lower box device 700 by the securing action of the insert 900.
  • the upper chamber plate 122 substantially includes a structure that is substantially symmetrical to the lower chamber plate 800.
  • the upper chamber plate 122 includes a square upper portion and a disk-shaped lower portion.
  • the configuration of the upper chamber plate 122 is very easily understood by those skilled in the art through FIG. 8, so the upper chamber is omitted herein.
  • the upper box device 1000 is generally in the shape of a square, uncovered box.
  • the four corners of the upper box device 1 000 respectively have a column hole 1 020 corresponding to the column device 140, and the central portion of the bottom portion includes a circular cavity 1040 slightly larger than a lower portion of the upper chamber plate.
  • the circular cavity 1 040 includes a circumferential rib 1042 extending downwardly from the bottom.
  • a structure that can tightly accommodate the upper chamber plate 122 is formed.
  • the upper chamber plate 122 can be stably supported by the upper box device 1000.
  • the structure in which one of the upper casing devices 1 000 has no casing wall can also facilitate the replacement of the upper chamber plate 122.
  • the matching upper chamber plates 122 can be replaced according to different process sizes as needed, and the specific replacement process is described in detail below.
  • FIG. 12 shows a top plan view of the separator 125 in one embodiment 1200.
  • the partition 1200 is square in shape and includes four column holes 1220 corresponding to the column device 140 at the four corners of the partition 1200.
  • the central portion of the partition 1200 includes a circular indentation 1240 that can closely receive the circumferential ribs 1042 of the upper cassette device 1000.
  • the primary function of the diaphragm 1200 is to support the upper cassette device 1 000 above it and the upper chamber plate 122 housed within the upper cassette unit 1000.
  • the four sides of the partition 1200 are further formed with rectangular notches 1260, and the notches 1260 can be used for Accommodate pipelines and install other components such as wide, flow controllers, sensors.
  • the separator 1200 can be made of a stainless steel material.
  • FIG. 13 and FIG. 14 respectively show a front view and a cross-sectional view of a column and a corresponding sleeve included in the column device 140 in an embodiment 1300.
  • the column 1320 includes a cylindrical upper portion 1321 having the smallest diameter, a first cylindrical central portion 1323 having a relatively small diameter, a second central portion 1325 having a relatively large diameter, and a bottom portion 1327 having a hexagonal cross section (Fig. 2 141), the top outer surface of the upper portion 1321 further includes a first thread (not shown) of a predetermined length.
  • An outer surface of one end of the first middle portion 1323 adjacent to the upper portion 1321 further includes a second thread (not shown) of a predetermined length, and the second middle portion 1325 is adjacent to an outer surface of one end of the bottom portion 1327 of the hexagon.
  • a third thread (not shown) of a predetermined length is also included.
  • the inner diameter r of the sleeve 1340 is slightly greater than or equal to the diameter of the second middle portion 1325 of the upright 1320.
  • the inner diameter or the shortest distance of the section of the column device 140 becomes smaller from bottom to top, that is, the shortest distance of the section of the bottom 1327 > the outer diameter of the sleeve 1340 R> inner diameter r of the sleeve 1340> outer diameter of the second middle portion 1325> outer diameter of the first middle portion 1323> outer diameter of the upper portion 1321.
  • the first intermediate plate 134 and the bottom plate 132 may also be mounted on the column bottom 1327. The inner diameters of the column holes of the first intermediate plate 134 and the bottom plate 132 are slightly larger than the second middle portion 1325 of the column 1320.
  • the outer diameter in cooperation with the third nut 153 corresponding to the third thread, can secure the first intermediate plate 134 and the bottom plate between the third nut 153 and the column bottom 1327.
  • the inner diameters of the cylindrical holes of the second intermediate plate 136, the upper plate 138, and the lower casing device 128 are slightly larger than the outer diameter of the sleeve 1340, that is, the second intermediate plate 136, the upper plate 138, and the lower casing device 128.
  • the post hole can accommodate the sleeve 1340 and the second middle portion 1325 located inside the sleeve 1340, and the height of the lower box device 128 does not exceed the second middle portion 1325 or the upper edge of the sleeve 1340
  • the second intermediate plate 136, the upper plate 138, and the lower case device 128 can be moved up and down along the sleeve 1340 and the second middle portion 1325 located inside the sleeve 1340 under the driving of the driver.
  • the spacer 125 and the upper cassette device 124 may be fixed to the second nut 152 and the second middle portion 1325 or the upper edge of the sleeve 1340 by a second nut 152 corresponding to the second thread.
  • the inner diameter of the cylindrical hole of the partition plate 125 and the upper casing device 124 is slightly larger than the diameter of the first middle portion 1323 but not larger than the outer diameter of the second middle portion 1325. That is, the lower surface of the partition plate 125 is supported by the second middle portion 1325 and the upper edge of the sleeve 1340. It does not move down.
  • the position correcting device 110 includes a correction plate 14 14 above the upper chamber plate 122 and a top plate 1 12 above the correction plate 114.
  • the inner diameter of the cylindrical hole included in the four corners of the top plate 1 12 is slightly larger than the diameter of the upper portion 1321 of the vertical column and smaller than the diameter of the first middle portion 1323, so that the first nut 151 corresponding to the first thread can be fitted
  • the top plate 1 12 is fastened between the first nut 151 and the upper edge of the first middle portion 1323.
  • the post 1320 can be cut or cast from metal or alloy, and the sleeve 1340 is fabricated from a corrosion resistant, high temperature resistant material such as plastic.
  • Figure 15 shows a bottom view of the calibration plate 14 in the present embodiment 1500 of the present invention.
  • the correction plate 1500 is a flat plate having a size similar to that of the upper portion of the upper chamber plate 122, and the correction plate 1500 may be pressed against the upper portion of the upper chamber plate 122.
  • Figure 16 shows a perspective view of the top plate 1 12 of the present invention in one embodiment 1600.
  • the four corners of the top plate 1 600 include a cylindrical hole 1620 having an inner diameter slightly larger than a diameter of the upper portion 1321 of the column and smaller than a diameter of the first middle portion 1323, which may be performed by a first nut 151 corresponding to the first thread
  • a top plate 1600 is fastened between the first nut 151 and an upper edge of the first middle portion 1323 of the upright.
  • the diagonal line of the top plate 1600 and the midpoint of the opposite side also include a plurality of threaded holes 1 640 of the same inner diameter. As can be seen from Fig.
  • the end of the bolt 154 can exert a pressure on a portion of the correction plate 1 14 located below. That is, different pressures can be generated for different positions of the correction plate 1500 by bolts 154 of different screwing positions and screwing depths, and the pressure generated under the correction plate 1500 can be made not only by a certain measuring means.
  • the upper chamber plate 122 is tightly received in the upper cassette device 124, and the lower working surface of the upper chamber plate 122 has a suitable shape. That is, the gap between the lower working surface of the upper chamber plate 122 and the semiconductor wafer to be processed is adjusted by the pressure provided by the correcting plate 1500 to meet the processing requirements.
  • the top of the four sides of the top plate 1600 includes elongated strip-shaped perforations 1 660 that can be used to accommodate the pipeline and to mount other components.
  • the top plate 1 600 further includes a reinforcing rib 1 680, wherein a portion of the threaded hole 1640 is provided on the reinforcing rib 1680.
  • the position correcting device 110 can make the lower surface of the microchamber plate 122 in a relatively suitable fixed state, and the driving device 130 can make the upper surface of the lower chamber plate 126. Lowering or rising such that the lower surface of the upper chamber plate 122 and the upper surface of the lower chamber plate 126 The formed microchamber is in an open or closed state.
  • the lower surface of the upper chamber plate 122 and the upper surface of the lower chamber plate 126 may have corresponding conforming or coupling structures, the upper chamber plate 122,
  • the sealing means of the upper cassette means 124, the lower chamber plate 126 and the lower cassette means 128 may also employ a sealing member such as a rubber-like sealing annulus.
  • the upper and lower chamber plates 122, 126 should also have inlet and outlet structures such as hollow microchannels and flow channels.
  • inlet and outlet structures such as hollow microchannels and flow channels.
  • the semiconductor wafer and the inner wall of the microchamber are formed with voids through which the chemical can flow, the predetermined width of the void being generally between 0.01 mm and 10 mm. Portions such as those described above that are not described in detail herein are well known to those skilled in the art and will not be described herein.
  • the processing may be roughly divided into the following processes: a chamber plate replacement process, a position calibration process, and a chemical process.
  • the matching chamber plates can be replaced depending on the semiconductor wafer size and process requirements to be processed.
  • the replacement process of the lower chamber plate 126 is as follows: First, the drive generates a downward driving force to lower the lower case device 128 and the lower chamber plate 126, then opens or pulls out the insert 160, and then the original lower cavity The chamber plate 126 is slidably taken out along the navigation groove of the lower box device 128. A suitable lower chamber plate 126 is slidably loaded in the navigation groove of the lower box device 128, and the insert 160 is mounted to secure the lower chamber plate 126 within the lower box device 128.
  • the replacement process of the upper chamber plate 122 is as follows: The drive generates a downward driving force to lower the lower case device 128 and the upper chamber plate 126, and the bolts 154 are all unscrewed so that the bolts 154 are not After the correction plate 1 14 is pressed, the correction plate 1 14 is removed, and the original upper chamber plate 122 is lifted from the upper casing device 124 from below, and then the upper chamber is then lifted. The plate 122 is removed, a new upper chamber plate 122 is placed in the upper box device 124, the correction plate 14 is placed over the new upper chamber plate 122, and finally by the bolts 154 The calibration plate 14 is fixed and adjusted to effect correction or adjustment of the new upper chamber plate 122.
  • the position of the upper chamber plate 122 relative to the lower chamber plate can be corrected.
  • the position of the upper chamber plate 122 can be initially adjusted by appropriately adjusting the four corners of the upper box device 124 by adjusting the second nut 152 above the four corners of the upper box device 124; Level measuring device or observing the closed microcavity, depending on the measurement result or view
  • the pressure distribution on the correction plate 14 can be accurately adjusted, so that the upper chamber plate 122 is in a state more in line with the process requirements.
  • the manner of adjusting the upper chamber plate 122 may be It is easily recalled in the above description.
  • the microchamber is first closed by the driving device 130, and a chemical or other fluid is introduced into the microchamber through the hollow microchannel in the upper chamber plate 122 to internalize
  • the wafer is subjected to a process such as analysis, etching, etc., and then the chemical or other fluid is driven through the hollow microchannels in the lower chamber plate 126 by internal pressure or suction, such as the carrying of a gas or the creation of a vacuum. Or the structure inside the diversion tank is discharged. This part of the content is well known to those skilled in the art.
  • the upper chamber plate 122 and the lower chamber plate 126 are designed to take into account structures such as hollow micro-pipes or diversion channels, the upper chamber plate 122 and the lower chamber plate are according to specific embodiments. 126 may have a variety of variations and more complex structures, and is not exactly as described herein for upper chamber plate 122 and lower chamber plate 126, so the differences herein should not be construed as limiting the scope of the invention. factor.
  • One of the advantages and highlights of the present invention is that semiconductor processing devices such as those of the prior art typically employ the upper and lower drive units to drive the structure of the upper chamber plate 122 and the lower chamber plate 126, respectively.
  • the position correcting device 1 1 1 is used instead of the upper driving device in the prior art, so that the present invention not only has a simpler structure, but also facilitates the user's operation.
  • Another advantage and highlight of the present invention is that semiconductor processing devices such as those in the prior art replace the matching upper chamber plate 122 and lower chamber plate 126 when the semiconductor wafers to be processed are of different sizes or process requirements. It is necessary to disassemble the entire part.
  • the pull-down lower cartridge device 128 and the mating insert 160 are used to facilitate the loading and removal of the lower chamber plate 126, and only the lower chamber plate 126 is required to be along the lower cartridge device.
  • the navigation groove of 128 is slidably pulled out, and the lower chamber plate 126 of a suitable size is replaced and then slid into the lower box device 128 and fixed by the insert 160.
  • the replacement of the upper chamber plate 122 can be performed, and the replacement is simple and easy.
  • Still another advantage and highlight of the present invention is: a semiconductor processing apparatus such as in the prior art, if the microchamber is not tightly closed or the seal is not tight during the chemical treatment, and the inside of the lower chamber plate is minute When a leak occurs in a pipe, it may cause a chemical or its He leaks fluid into the lower box device, which in turn may spill the entire semiconductor device.
  • the bottom surface of the lower box device 128 used in the present invention includes three slope surfaces having the same inclination angle and the same inclination, juxtaposed and the same width.
  • the lower box device 128 can The leaked chemical is collected on one side or one side of the slope bottom 704 of the slope surface, and is easily detected by a sensor disposed at the bottom of the slope, promptly signals, and initiates measures to prevent leakage. The leaked chemical is then collected in conjunction with a structure such as a gutter, a line, a storage box, etc., to prevent corrosion and contamination of the chemical from flowing out to other parts of the apparatus.
  • Still another advantage and highlight of the present invention is that semiconductor processing devices such as the prior art, such as the assembly of the column device 140, typically employ integrally formed metal casting, while on the one hand due to chemical processing within the microchamber during the chemical processing stage.
  • the liquid sometimes produces corrosive and/or high temperature gases, which corrode the column device when it comes into contact with the surface of the metal column.
  • the lower case device is rising and During the descent process, the column device is slightly worn to produce contaminated particles containing metal components.
  • the column device 140 used in the present invention adopts a structure in which the column 1320 and the sleeve 1340 are combined, wherein the column 1320 can be cut or cast by an integrally formed metal, and the sleeve 1340 can be made resistant to corrosion and high temperature, such as Made of plastic materials. Even if the column device 140 is worn and corroded, it is only necessary to replace the sleeve 1340.
  • the upper chamber plate 122, the upper box device 124, the lower chamber plate 126 and the lower box device 128, which may be in direct contact with chemical reagents and other fluids, should be resistant to corrosion and high temperature.
  • the material is made, and other components can be cut or cast from one-piece metal.
  • the column 1320 has a plurality of stepped cylindrical cylinders and bolt holes, and it is only necessary to fit the corresponding screws and bolts to facilitate the fixing and engagement of the other components on the column device 140.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

一种半导体处理装置
技术领域 本发明涉及半导体晶圆或相似工件的表面处理领域， 特别涉及一种用于化 学处理半导体晶圆表面， 以及清洁、 蚀刻及其它处理的装置。 背景技术 晶圆是生产集成电路所用的载体。 在实际生产中需要制备的晶圆具有平整、 超清洁的表面， 而用于制备超清洁晶圆表面的现有方法可分为两种类别： 诸如 浸没与喷射技术的湿法处理过程， 及诸如基于化学气相与等离子技术的干法处 理过程。 其中湿法处理过程是现有技术采用较为广泛的方法， 湿法处理过程通 常包括采用适当化学溶液浸没或喷射晶圆之一连串步骤组成。
现有技术中包含一种采用湿法处理过程对晶圆进行超清洁处理的装置。 该 装置中形成有一可以紧密接收并处理半导体晶圆的微腔室， 该微腔室可处于打 开状态以供装载与移除半导体晶圆， 也可处于关闭状态以用于半导体晶圆的处 理， 其中处理过程中可将化学制剂及其他流体引入所述微腔室。 所述打开状态 和关闭状态由该装置中包含的两个驱动装置分别驱动构成所述微腔室的上、 下 两个工作面的相对移动来实现。
但是在实际使用中发现， 上述装置还存在以下缺点： 第一， 所述装置中的 由两个驱动装置分别驱动构成所述微腔室的上、 下两个工作面的结构较为复杂， 若采用一个驱动装置驱动所述微腔室的上工作面或者下工作面也可以达到同样 效果； 第二， 对于不同尺寸的半导体晶圆， 处理时需要更换相应的不同尺寸或 不同结构的微腔室组件， 更换该微腔室组件时需要将整个组件拆开， 十分不方 便； 第三， 当微腔室密封不严或者流通化学制剂的管道发生化学制剂泄露时， 所述装置中相关的泄露收集机制不够完善； 第四， 所述上、 下两个工作面发生 相对移动时依靠贯穿所述上、 下两个工作表面的若干根不锈钢金属立柱完成， 所述立柱容易被化学处理过程中产生的高温和 /或腐蚀性的气体所腐蚀而成为金 属污染源。 再有， 现有的套接在所述立柱上的上下工作面的各个组件是相互焊 接在一起的， 不易于设备的安装， 调试和拆卸， 制造程序比较复杂， 工艺的质 量控制实施比较困难。
因此有必要提供一种新的解决方案来解决上述问题。 发明内容 本发明的目的在于提供一种半导体处理装置， 其具有更为简单的结构， 可 以更方便地更换微腔室组件， 可以更灵活的设置微腔室位置， 可以更安全、 有 效地收集泄露的化学处理液体。
根据本发明的目的， 本发明提供一种半导体处理装置， 其包括： 包括一用 于紧密容纳和处理半导体晶圆的微腔室， 所述微腔室包括形成上工作表面的上 腔室部和形成下工作表面的下腔室部， 所述上腔室部和所述下腔室部可在一用 于装载和 /或移除该半导体晶圆的打开位置和一用于紧密容纳该半导体晶圆的关 闭位置之间相对移动。 当上腔室部或者所述下腔室部处于关闭位置时， 半导体 晶圆安装于所述上工作表面和下工作表面之间， 且与所述微腔室的内壁形成有 供处理流体流动的空隙， 所述上腔室部和 /或所述下腔室部中包括至少一个供处 理流体进入所述微腔室的入口和至少一个供处理流体排出所述微腔室的出口。
在一个优选的实施例中， 所述下腔室部包括形成所述下工作表面的下腔室 板和容纳所述下腔室板的下盒装置， 所述下盒装置包含侧面开口的无盖空腔， 所述下腔室板可从所述侧面开口滑动进入或者移出所述无盖空腔。
在另一个优选的实施例中， 所述无盖空腔的表面包含有可导引流体最终流 向同一方向的导流凹槽。 所述导流凹槽包括排布在所述无盖空腔的下表面的若 干个倾斜角度和倾斜方式相同、 互相并列的斜坡面， 所述斜坡面的坡底位于所 述侧面开口处。
在另一个优选的实施例中， 所述上腔室部和下腔室部的边缘包含对应的柱 位孔， 所述上腔室部和所述下腔室部中的一个可沿贯穿所述柱位孔的立柱装置 的导引在所述打开位置和所述关闭位置之间移动。
在另一个优选的实施例中， 所述半导体处理装置还包括一位置校正装置， 所述位置校正装置可以对上腔室板进行压力调整， 以使得上腔室部的工作表面 的各部分与半导体晶圆之间的空隙符合预定宽度。
在另一个优选的实施例中， 所述立柱装置包括立柱和套接在所述立柱外表 面的套筒， 所述立柱装置包括立柱和套接在所述立柱外表面的套筒， 所述立柱 为含有带螺纹的阶梯式结构， 通过螺帽与阶梯配合来精准确定各个平面的相对 位置， 即简单又灵活。
与现有技术相比， 本发明的优点包括如下几点或一点： 第一、 本发明的半导体处理设备， 只需要使用一个驱动装置驱动所述上工 作面或者下工作面中的一个即可， 不仅使得本发明具有了更为简单的结构， 更 方便了使用者的安装和拆卸时的操作， 同时本发明的位置、 形状校正模块可以 实现调整微腔室的位置或者上腔室板和下腔室板之间的相对位置；
第二、 本发明采用可抽拉式的上、 下盒装置容纳上、 下腔室板， 使得更换 不同尺寸的所述腔室板的方式变得简单方便； 或
第三、 本发明采用的下盒装置的底面包含有若干个倾斜角度和倾斜方式相 同、 互相并列的斜坡面， 可以将泄露的化学处理液或其他流体收集于所述下盒 装置的一侧或一处， 因此只需要一个传感器监测泄露的发生。 附图说明 结合参考附图及接下来的详细描述， 本发明将更容易理解， 其中同样的附 图标记对应同样的结构部件， 其中：
图 1为本发明中的半导体处理装置在一个实施例中的立体示意图； 图 2为本发明中的半导体处理装置在一个实施例中的正面示意图； 图 3为本发明中的底板在一个实施例中的俯视示意图；
图 4为本发明中的第一中间板在一个实施例中的立体示意图；
图 5为本发明中的第二中间板在一个实施例中的反面立体示意图； 图 6为本发明中的上板在一个实施例中的俯视示意图；
图 7为本发明中的下盒装置在一个实施例中的立体示意图；
图 8为本发明中的下腔室板在一个实施例中与所述下盒装置的组装示意图； 图 9为本发明中的插件在一个实施例中的反面立体示意图；
图 10为本发明中的上盒装置在一个实施例中的立体示意图；
图 11为本发明中的上盒装置在一个实施例中的俯视示意图；
图 12为本发明中的隔板在一个实施例中的俯视示意图；
图 13为本发明中的立柱在一个实施例中的正视示意图；
图 14为本发明中的套筒在一个实施例中的剖面示意图；
图 15为本发明中的校正板在一个实施例中的仰视示意图；
图 16为本发明中的顶板在一个实施例中的立体示意图。 具体实施方式 为使本发明的上述目的、 特征和优点能够更加明显易懂， 下面结合附图和 具体实施方式对本发明作进一步详细的说明。
请参考图 1和图 2，其分别示出了本发明中的半导体处理装置在一个实施例 1 00中的立体示意图和正面示意图。 简单来讲， 所述半导体处理装置 1 00包括 位置校正装置 1 10、 微腔室模块 120、 驱动装置 130和立柱装置 140。 所述前 三个模块中的各个组件由四根互相平行的立柱装置 140所固定、 支撑或导引， 并沿所述立柱装置 140由下往上分别为驱动装置 130、 微腔室模块 120和位置 校正装置 1 1 0。 其中微腔室模块 120包括一处理半导体晶圆的微腔室， 所述微 腔室包括有上腔室板 122和下腔室板 126， 所述上腔室板 122由上盒装置 124 支撑， 并由位于其上方的位置校正装置 1 10限制于所述上盒装置 124内； 相应 地， 所述下腔室板 126由下盒装置 128支撑， 下盒装置 128又由位于其下方的 驱动装置 130支撑并驱动。
所述驱动装置 130可驱动所述下盒装置 128依所述立柱装置 140导引而相 对于所述上盒装置 124移动， 以便当需要装载及移除半导体晶圆时能够打开或 关闭上盒装置 124和下盒装置 128， 也即能够打开或关闭上腔室板 122和下腔 室板 126形成的微腔室。 当关闭所述微腔室时， 可将化学试剂及其他流体引入 所述微腔室内部以供对其内的半导体晶圆进行化学清洁、 蚀刻及其他处理， 并 在处理完毕后， 将所述化学试剂及其他流体引出所述微腔室。
为了便于描述本发明， 首先描述所述驱动装置 130， 所述驱动装置 130 由 下向上依次包括底板 132、 位于底板上方的第一中间板 134、 位于第一中间板 134上方的第二中间板 136和位于第二中间板 136上方的上板 138。 由所述底 板 132、 第一中间板 134、 第二中间板 136和上板 138形成的一个空腔内还包 括一驱动器 （未示出） 。 当所述驱动器产生向上的驱动力时， 所述第二中间板 136和上板 138会沿所述立柱装置 140的导引而驱动位于所述上板 138上方的 下盒装置 128及下腔室板 126向上移动， 而使所述微腔室完成从打开状态到关 闭状态的变换。
图 3为所述底板 132在一个实施例 300中的俯视示意图。所述底板 300的 形状呈正方形， 并在所述底板 300的四角包括对应于所述立柱装置 140的四个 柱位孔 302， 并通过第三螺帽 153与所述立柱装置 140的位于所述底板 300下 方的六边形底部 141 (见图 2)紧固在一起。所述底板 300朝向下方的一面还包 括有位于所述底板 300对角线上的凸棱 304。 所述凸棱 304的截面呈矩形， 所 述凸棱 304为所述底板提供高强度的支撑。 所述底板 300的靠近中央部分还包 括圆形穿孔 306和两个螺纹穿孔 308， 所述圆形穿孔 306用于供其他设备、 管 线或者装置穿过； 所述两个螺纹穿孔 308可用于结合螺丝等部件固定所述驱动 器的下方。 另一方面， 所述底板 300的四边还分别形成有三个并列的矩形的缺 P 309。
图 4为所述第一中间板 134在一个实施例 400中的立体示意图。 所述第一 中间板 400的形状也呈正方形， 并在所述第一中间板 400的四角同样包括对应 于所述立柱装置 140的四个柱位孔 402， 并与所述底板 300—起通过第三螺帽 153和与所述立柱装置 140的位于所述底板 300下方的六边形底部 141 (见图 1 ) 紧固在一起。 所述第一中间板 400 向上的一面、 以垂直于所述第一中间板 400 所在平面的方向延伸而形成有体积略大于驱动器大小的圆形的第一筒壁 404以容纳所述驱动器。 所述第一中间板 400对应于所述底板 300在靠近中央 部分还包括圆形穿孔 406和两个螺纹穿孔 408， 所述圆形穿孔 406用于供其他 设备、 管线或者装置穿过； 所述两个螺纹穿孔 408可用于结合螺丝等部件固定 所述驱动器的下方。 所述第一中间板 400的四边还分别形成有三个并列的矩形 的穿孔 409。
图 5为所述第二中间板 136在一个实施例 500中的反面立体示意图。 所述 第二中间板 500有基本对称于所述第一中间板 400的结构。所述第二中间板 500 的四角包括对应于所述立柱装置 140的四个柱位孔 502， 该板可以沿所述立柱 装置 140的导引而向上或者向下移动。 所述第二中间板 500向下的一面 （也即 图示中的向上的一面） 、 以垂直于所述第二中间板 500所在平面的方向延伸而 形成有体积略大于驱动器大小的圆形的第二筒壁 504以容纳所述驱动器。 所述 第二筒壁 504 的直径应当略大于或者略小于所述第一中间板 400 的第一筒壁 404的直径，以使得第二中间板 500向第一中间板 400移动时所述第二筒壁 504 可以包含或者内嵌于所述第一筒壁 404。 所述第二中间板 500在靠近中央部分 还包括两个螺纹穿孔 508， 所述两个螺纹穿孔 508可用于结合螺丝等部件固定 所述驱动器的上方。 所述第二中间板 500的所述第二中间板 500的四边还分别 形成有三个并列的矩形的穿孔 509。
图 6为所述上板 138在一个实施例中 600的俯视示意图。所述上板 600的 形状对应于底板 300呈正方形， 所述上板 600的四角包括对应于所述立柱装置 140的四个柱位孔 602， 所述上板 600可以沿所述立柱装置 140的导引而向上 或者向下移动。 所述上板 600的中央还包括有并列的两个穿孔 608。 所述穿孔 608可以结合螺丝等部件固定所述驱动器的上方。 所述上板 600的四边还分别 形成有三个并列的矩形的缺口 609。
综上所述， 所述底板 132、 第一中间板 134、 第二中间板 136和上板 138 形成的一个圆柱形的空腔， 其内部空间可容纳有驱动器， 所述驱动器是现有技 术中较为成熟的产品， 比如说气动驱动器， 类似地， 也可以采用其他诸如机械 驱动、 电动驱动或者液压驱动原理的驱动器。 但是应当了解到， 当所述驱动器 产生向上的驱动力时， 所述第二中间板 136和上板 138会被所述驱动器的驱动 力所驱动而向上移动； 当所述驱动器产生向下的驱动力时，所述第二中间板 136 和上板 138会被所述驱动器的驱动力和自身重力所驱动而向下移动。
易于思及的， 在另外一个实施例中， 所述底板 132和第一中间板 134可以 一体成型制作成为一块底部板； 所述第二中间板 136和上板 138可以结合制作 成为一块顶部板。 也就是说， 所述驱动装置 130并不拘泥于上述实施例中描述 的实施例， 只要能够达到同样的或者更优的效果的实施方式皆可。
接着描述如图 1 和图 2中所示出的微腔室模块 120。 所述微腔室模块 120 由下向上依次包括下盒装置 128、 由下盒装置 128支撑的下腔室板 126、 隔板 125、 隔板 125上方的上盒装置 124和由上盒装置 124支撑的上腔室板 122。 所述下盒装置 128和由下盒装置 128支撑的下腔室板 126可在所述驱动装置 130的驱动下沿所述立柱装置 140的导引而向上或者向下移动。 所述隔板 125、 隔板 125上方的上盒装置 124和由上盒装置 124支撑的上腔室板 122通常静止 不动， 只可由所述位置校正装置 1 10进行有关微腔室位置、 形状的略微调整， 有关该细节下文将会详述。 当所述下盒装置 128和由下盒装置 128支撑的下腔 室板 126在所述驱动装置 130的驱动下沿所述立柱装置 140的导引而向上移动 并与所述上腔室板 122和上盒装置 124闭合后， 将形成微腔室。
图 7为所述下盒装置 128在一个实施例中 700的立体示意图。 所述下盒装 置 700的形状大体上呈底面为正方形的无盖盒状。 在所述下盒装置 700的四角 包括对应于所述立柱装置 140的四个柱位孔 702。 所述下盒装置 700的相对于 上盒装置 124的一面上具有三个倾斜角度和倾斜方式相同、 并列且宽度相同的 斜坡面 704，此处包括斜坡面的底面设计用于收集从位于其上方的下腔室板滴漏 的化学药剂或者其他流体。 藉由上述斜坡面， 化学制剂或者其他流体最终可流 动到所述斜坡面 704的坡底。 当泄露的化学处理液或其它流体碰到在坡底设置 的液体或其它流体的传感器， 传感器就会发出警告信号， 同时按预先设计好的 方案启动一系列的保护措施， 避免泄露扩大， 以保证设备和操作人员的安全。 此时再配合连通所述斜坡面的坡底 704的导流凹槽、 孔洞、 管线或者收纳盒之 类的装置即可收集已泄露的流体。
同时应当认识到所述奇数斜坡面 704的坡底朝向的盒壁部分是缺失不存在 的， 而其他三个盒壁 706与所述底面 701接触的内壁部位向水平方向凹陷形成 一凹槽 707。 所述下腔室板 126可经由缺失的盒壁部位， 沿其他盒壁 706上的 凹槽 707水平滑动进入所述下盒装置 700并由所述底面 701支撑。 同理， 当所 述下腔室板 126位于下盒装置 700内时也可以沿所述凹槽 707滑动， 从缺失的 盒壁部位滑动出所述下盒装置 700。 所述下盒装置 700的四边还分别形成有矩 形的缺口 708。
请参考图 8， 其示出了所述下腔室板 126在一个实施例 800中与所述下盒 装置 700的组装示意图。 虽然所述下腔室板 800通常为一体成型。 所述下腔室 板 800包含下部 820和位于所述下部 820之上的上部 840。所述下部 820的尺 寸和边缘厚度分别对应于所述下盒装置 700的盒壁 706之间的距离和凹槽 707 的宽度。 以使所述下腔室板 800可以沿所述下盒装置 700的盒壁 706上的凹槽 707滑动。 所述上部 840的上表面 842为所述微腔室的下工作面。
应当认识到， 所述下腔室板 800采用可抽拉式的方式滑动进入或者移出， 可以非常方便地进行装载和移除。 由于半导体晶圆的大小分为 4英寸、 6英寸、 8英寸、 12英寸等等规格， 还有， 为了达到更好的处理效果， 需要针对不同的 处理工艺设计不同的微腔室的内部结构， 如有图像的晶圆表面的清洗微腔室或 化学机械抛光后的晶圆表面清洗微腔室； 所以在需要时可根据不同尺寸的晶圆， 也可根据工艺要求更换匹配的下腔室板。 同时， 在所述下腔室板 800滑动进入 所述下盒装置 700时， 还可以使用一插件 160 (如图 1 中所示） 将其卡合于所 述下盒装置内， 在图 9中示出了所述插件 160在一个实施例 900中的反面立体 示意图。 所述插件 900的两边包含与所述下盒装置 700的凹槽 707对应的凸肋 902，所述插件 900的底部也即图示中的上面包含有对应于所述偶数斜坡面的凸 起 904和奇数斜坡面的凹陷 906以对应所述下盒装置 700的底面构造。 所述插 件 900还包括位于底面上的阻块 908， 在所述插件 900卡合于下盒装置 700内 时， 所述阻块 908可以与下盒装置 700的斜坡面 704的坡底对应的壁相卡合， 从而阻止所述插件 900从下盒装置 700脱落。 在需要取下所述插件 900时， 可 以先将所述插件 900向上抬起， 一直将所述插件 900从所述下盒装置 700内抽 出。 显然地， 藉由所述插件 900的固定作用， 所述下腔室板 800可以被固定于 所述下盒装置 700内。
所述上腔室板 122基本包括有大体上对称于所述下腔室板 800的结构。 所 述上腔室板 122包括呈正方形的上部和呈圆盘形的下部， 本领域的技术人员通 过图 8非常易于思及到所述上腔室板 122的构造，故本文省略所述上腔室板 122 的相关示意图。 显然， 所述上腔室板 122的正方形的上部的边长和所述圆盘形 下部的直径都可以与所述下腔室板 800相同或者相近， 且所述下部的下表面为 所述微腔室的上工作面。 应当认识到， 当所述下腔室板 800的上工作面和所述 上腔室板的下工作面闭合或者紧贴时， 其中会形成一用于容纳半导体晶圆的空 腔。 图 10和图 1 1分别示出了所述上盒装置 124在一个实施例 1000中的立体 示意图和仰视图。 所述上盒装置 1000 的形状大体上为底部为正方形的无盖盒 装。所述上盒装置 1 000的四角分别有对应于所述立柱装置 140的柱位孔 1 020， 所述底部的中央部分包含有略大于所述上腔室板的下部的圆形空腔 1040， 所述 圆形空腔 1 040包含有向下延伸出所述底部的圆周凸肋 1 042。 并且藉由包含三 个盒壁 1060的与所述上腔室板 122的上部相吻合的盒状空间，形成可紧密容纳 所述上腔室板 122的结构。 藉由该结构， 所述上腔室板 122可以被所述上盒装 置 1000所稳定的支撑。 此外所述上盒装置 1 000中一侧无盒壁的结构也可以方 便所述上腔室板 122的更换。 同样的， 在需要时可根据不同尺寸的晶圆， 也可 根据工艺要求更换匹配的上腔室板 122， 具体的更换过程在下文详细描述。
图 12示出了所述隔板 125在一个实施例 1200中的俯视示意图。 所述隔板 1200的形状呈正方形，并在所述隔板 1200的四角包括对应于所述立柱装置 140 的四个柱位孔 1220。 所述隔板 1200的中央部分包含有可以紧密接收上盒装置 1 000的圆周凸肋 1042的圆形缺口 1240。 所述隔板 1200的主要作用是支撑位 于其上方的上盒装置 1 000和容纳于所述上盒装置 1000内的上腔室板 122。 所 述隔板 1200的四边还分别形成有矩形的缺口 1260， 所述缺口 1260可以用于 容纳管线及安装其他诸如阔、 流动控制器、 感测器之类的元件。 在一个实施例 中， 所述隔板 1200可以采用不锈钢材料制作。
为了进一步描述上述各个板与所述立柱装置 140的位置关系。 请首先参考 图 13和图 14， 其分别示出了立柱装置 140中包含的立柱及对应的套筒在一个 实施例 1300中的正视示意图和剖面示意图。 所述立柱 1320包括直径最细的圆 柱形的上部 1321、 直径较细的圆柱形的第一中部 1323、 直径较粗的圆柱形的 第二中部 1325和截面为六边形的底部 1327 (图 2中的 141 ) ， 所述上部 1321 的顶端外表面还包括预定长度的第一螺纹（未示出） 。 所述第一中部 1323靠近 于所述上部 1321 的一端外表面还包括预定长度的第二螺纹（未示出） ， 所述第 二中部 1325靠近于所述六边形的底部 1327的一端外表面还包括预定长度的第 三螺纹 （未示出） 。 所述套筒 1340的内径 r略大于或者等于所述立柱 1320的 第二中部 1325的直径。 当所述套筒 1340套在所述立柱 1320上时也即组装为 立柱装置 140， 此时请一并参考图 1和图 2。 当所述套筒 1340和立柱 1320组 装后， 所述立柱装置 140的截面的内径或最短距离由下到上依次变小， 也即所 述底部 1327的截面的最短距离 >套筒 1340的外径 R>套筒 1340的内径 r>第二 中部 1325的外径 >第一中部 1323的外径 >上部 1321 的外径。在一个实施例中， 所述第一中间板 134和底板 132还可以安装在立柱底部 1327之上， 第一中间 板 134和底板 132的柱位孔内径略大于所述立柱 1320的第二中部 1325的外径， 配合对应于所述第三螺纹的第三螺帽 153可以将所述第一中间板 134和底板固 定在第三螺帽 153和立柱底部 1327之间。 所述第二中间板 136、 上板 138和 下盒装置 128的柱位孔内径略大于所述套筒 1340的外径，也即所述第二中间板 136、 上板 138和下盒装置 128的柱位孔可以容纳所述套筒 1340及位于套筒 1340内部的第二中部 1325， 并且所述下盒装置 128的高度不会超过所述第二 中部 1325或者所述套筒 1340的上边沿， 此时所述第二中间板 136、 上板 138 和下盒装置 128可以在驱动器的驱动下沿所述套筒 1340及位于套筒 1340内部 的第二中部 1325所上下移动。配合对应于所述第二螺纹的第二螺帽 152可以将 所述隔板 125和上盒装置 124固定于第二螺帽 152和所述第二中部 1325或者 所述套筒 1340的上边缘之间， 所述隔板 125和上盒装置 124的柱位孔内径略 大于所述第一中部 1323的直径但不大于所述第二中部 1325的外径。 也即所述 隔板 125的下表面会藉由所述第二中部 1325以及所述套筒 1340的上边缘支撑 而不会向下移动。
请参阅图 1和 2所示， 所述位置校正装置 1 1 0包括位于上腔室板 122上方 的校正板 1 14和位于校正板 1 14上方的顶板 1 12。 顶板 1 12的四角包含的柱位 孔的内径略大于所述立柱的上部 1321 的直径而小于所述第一中部 1323 的直 径， 故配合对应于所述第一螺纹的第一螺帽 151可以将所述顶板 1 12紧固于所 述第一螺帽 151和所述第一中部 1323的上边缘之间。 特别地， 所述立柱 1320 可以采用金属或者合金切割或者铸造制作，所述套筒 1340采用诸如塑料之类的 耐腐蚀、 耐高温材料制作。
为了进一步描述所述位置校正装置 1 10， 请参考图 15和图 1 6。 图 15示出 了本发明中的校正板 1 14在一个实施例 1500中的仰视示意图。所述校正板 1500 为一平板，其大小与所述上腔室板 122的上部相似，该校正板 1500可以压置于 所述上腔室板 122的上部之上。
图 16示出了本发明中的顶板 1 12在一个实施例中 1600的立体示意图。 所 述顶板 1 600的四角包含内径略大于所述立柱上部 1321的直径而小于所述第一 中部 1323的直径的柱位孔 1620， 利用对应于第一螺纹的第一螺帽 151可将所 述顶板 1600紧固于所述第一螺帽 151和所述立柱的第一中部 1323的上边缘之 间。所述顶板 1600的对角线和对边中点连线上还包括有若干相同内径的螺纹孔 1 640。 结合图 2可知， 当采用对应于所述螺纹孔 1 640的螺栓 154旋入所述顶 板 1600后， 所述螺栓 154的末端可以对位于下方的校正板 1 14的局部产生压 力。也即可以通过不同旋入位置和旋入深度的螺栓 154可以对所述校正板 1500 的不同位置产生不同的压力，经过一定的测量手段可以使得所述校正板 1500的 下方产生的压力不仅将所述上腔室板 122紧固容纳于上盒装置 124中， 并且使 得所述上腔室板 122的下工作面具有合适的形状。也就是说，所述上腔室板 122 的下工作面与待处理的半导体晶圆之间的空隙被所述校正板 1500 提供的压力 调节而符合处理工艺的要求。所述顶板 1600的四边中部都包含有细长条形穿孔 1 660， 可以用于容纳管线及安装其他元件。 所述顶板 1 600 还包括有加强肋 1 680， 其中部分螺纹孔 1640设在所述加强肋 1680上。
综上所述， 所述位置校正装置 1 1 0可以使所述微腔室板 122的下表面处于 较为合适的固定状态， 而所述驱动装置 130可以使所述下腔室板 126的上表面 下降或者上升而使得所述上腔室板 122的下表面和所述下腔室板 126的上表面 形成的微腔室处于打开或者关闭状态。 当然， 为了获得较为严密的微腔室， 所 述上腔室板 122的下表面和所述下腔室板 126的上表面可以具有相应的贴合或 者耦合结构， 所述上腔室板 122、上盒装置 124、 下腔室板 126和下盒装置 128 的贴合处还可以采用诸如橡胶质地的密封〇环等密封元件。 同时为了能够使化 学制剂或者其他流体能够进入和排出微腔室，所述上腔室板 122和下腔室板 126 还应当具有中空的微小管道和导流槽之类的入口和出口结构。 譬如需要使得半 导体晶圆在所述微腔室内部时， 半导体晶圆和所述微腔室的内壁形成有可供化 学制剂流通的空隙， 该空隙的预定宽度通常在 0.01 mm与 10mm之间。 诸如上 述这些本文中未详细描述的部分， 均为本领域技术人员所熟知的内容， 在此不 再累述。
在一个具体的实施例中， 当采用本发明中的半导体处理装置 100处理半导 体晶圆时， 处理过程大概可分为如下几个过程： 腔室板更换过程、 位置校准过 程、 化学处理过程。
在腔室板更换过程中， 可以根据要处理的半导体晶圆尺寸和工艺要求而更 换匹配的腔室板。 所述下腔室板 126的更换过程如下： 首先将驱动器产生向下 的驱动力而使下盒装置 128和下腔室板 126下降，然后打开或者拔出插件 160， 再将原有的下腔室板 126沿所述下盒装置 128的导航凹槽中滑动取出。 将合适 的所述下腔室板 126沿所述下盒装置 128的导航凹槽中滑动装入， 安装所述插 件 160以使所述下腔室板 126固定于所述下盒装置 128内。
所述上腔室板 122的更换过程如下： 将驱动器产生向下的驱动力而使下盒 装置 128和上腔室板 126下降， 将所述螺栓 154都拧下， 以使得所述螺栓 154 不在顶住所述校正板 1 14， 之后将所述校正板 1 14取下， 从下方向上将原有的 上腔室板 122从所述上盒装置 124内托起， 随后将所述上腔室板 122取出， 将 新的上腔室板 122放入所述上盒装置 124内， 将所述校正板 1 14放置于所述新 的上腔室板 122的上方， 最后通过所述螺栓 154对所述校正板 1 14进行固定及 调整来实现对新的上腔室板 122的校正或调整。
在所述位置校准过程中， 可以校正所述上腔室板 122相对与所述下腔室板 的位置。 首先通过可以调节所述上盒装置 124的四角上方的第二螺帽 152给予 所述上盒装置 124的四角适当的压力，可以初步调节所述上腔室板 122的位置; 再利用现有的水平测量装置或者观察闭合状态的微腔室， 根据测量结果或者观 察结果， 配合调节安装在顶板 1 12上的多个螺栓 154， 可以精确地调整在所述 校正板 1 14上的压力分布， 从而使得所述上腔室板 122处于较为符合工艺要求 的状态。 当然， 在一些实施例中， 也可能需要调节所述上腔室板 122处于一定 倾角的状态， 以方便对半导体晶圆做相应的处理， 此时调节所述上腔室板 122 的方式可以从上述描述中很容易地联想到。
在化学处理过程， 首先利用所述驱动装置 130将所述微腔室闭合， 再通过 所述上腔室板 122 内的中空的微小管道将化学制剂或其他流体引入所述微腔室 以对内部的晶圆进行诸如分析、 蚀刻之类的处理， 然后通过内部的压力或吸力、 诸如气体的运载或产生真空驱使所述化学制剂或其他流体经由所述下腔室板 126内的中空的微小管道或者导流槽之内的结构排出。此部分内容是本领域技术 人员所熟知的内容。 特别地， 由于上腔室板 122和下腔室板 126在设计时需要 考虑诸如中空的微小管道或者导流槽之类的结构， 根据具体实施例所述上腔室 板 122和下腔室板 126可能有多种变形和更为复杂的结构， 并不完全如本文中 对于上腔室板 122和下腔室板 126的描述， 故有关此处的区别不应当作为制约 本发明的保护范围的因素。
本发明的优点和亮点之一在于： 现有技术中诸如此类的半导体处理装置， 通常采用上、 下两个驱动装置分别驱动所述上腔室板 122和所述下腔室板 126 的结构。 而本发明中采用位置校正装置 1 1 1 替代现有技术中的位于上部的驱动 装置， 使得本发明不仅具有了更为简单的结构， 也方便了使用者的操作。
本发明的另一个优点和亮点在于： 现有技术中诸如此类的半导体处理装置， 在待处理的半导体晶圆尺寸不同时或工艺要求不同时，更换匹配的上腔室板 122 和下腔室板 126时需要将整个部件全部拆开。 而本发明中采用可抽拉式的下盒 装置 128和配套的插件 160使得所述下腔室板 126的装载和移除过程较为方便， 只需要将下腔室板 126沿所述下盒装置 128的导航凹槽内滑动拉出， 更换尺寸 合适的下腔室板 126后再滑动进入所述下盒装置 128，并用插件 160固定皆可。 同样的， 在拆卸了所述螺栓 154和所述校正板 1 14之后， 就可以进行上腔室板 122的更换， 更换简便易行。
本发明的再一个优点和亮点在于： 现有技术中诸如此类的半导体处理装置， 如果在化学处理过程中， 所述微腔室闭合不紧密或者密封不严格， 以及所述下 腔室板内的微小管道发生泄露之类的情况发生时， 都可能导致化学制剂或者其 他流体泄露到所述下盒装置内， 进而可能溢出整个半导体装置。 而本发明中采 用的下盒装置 128的底面包括有三个倾斜角度和倾斜方式相同、 并列且宽度相 同的斜坡面， 藉由类似于图 7中所描述的结构， 所述下盒装置 128可以将泄露 的化学制剂收集于所述斜坡面的坡底 704的一侧或者一处， 易于被设置在斜坡 底部的传感器及时检测出来， 及时发出信号， 启动防止泄露持续的措施。 再配 合诸如导流槽、 管线、 收纳盒之类的结构收集所述被泄露出的化学制剂， 而避 免所述化学制剂外流至设备的其它部位造成腐蚀和污染。
本发明的再一个优点和亮点在于： 现有技术中诸如此类的半导体处理装置， 诸如立柱装置 140的组件通常采用一体成型的金属铸造， 而一方面由于在化学 处理阶段所述微腔室内的化学处理液有时会产生带有腐蚀性和 /或高温的气体， 当这些带有腐蚀性的气体接触到金属立柱表面时会对所述立柱装置发生腐蚀， 另一方面由于所述下盒装置在上升和下降的过程中会对所述立柱装置造成轻微 磨损而产生含金属成分的污染颗粒。 而本发明中采用的立柱装置 140采用立柱 1320和套筒 1340结合的结构， 其中立柱 1320可以采用一体成型的金属切割 或者铸造而成，而所述套筒 1340可以采用耐腐蚀和耐高温的诸如塑料的材料制 作。 即便所述立柱装置 140发生磨损和腐蚀， 只需要更换所述套筒 1340即可。
同时由此处描述可以易于联想到， 可能与化学试剂及其他流体直接接触的 上腔室板 122、 上盒装置 124、 下腔室板 126和下盒装置 128都应当采用耐腐 蚀和耐高温的材料制作， 而其他组件均可以采用一体成型的金属切割或者铸造 而成。
另一方面， 所述立柱 1320具有多级阶梯状的圆柱形柱体和螺栓孔， 只需要 配合相应的螺丝和螺栓就可以非常方便其他各个组件的固定和卡合在所述立柱 装置 140上。
上述说明已经充分揭露了本发明的具体实施方式。 需要指出的是， 熟悉该 领域的技术人员对本发明的具体实施方式所做的任何改动均不脱离本发明的权 利要求书的范围。 相应地， 本发明的权利要求的范围也并不仅仅局限于所述具 体实施方式。

Claims

权利 要 求 书
1 . 一种半导体处理装置， 其特征在于， 其包括：
包括一用于紧密容纳和处理半导体晶圆的微腔室， 所述微腔室包括形成上 工作表面的上腔室部和形成下工作表面的下腔室部， 所述上腔室部和所述下腔 室部可在一用于装载和 /或移除该半导体晶圆的打开位置和一用于紧密容纳该半 导体晶圆的关闭位置之间相对移动，
当上腔室部或者所述下腔室部处于关闭位置时， 半导体晶圆安装于所述上 工作表面和下工作表面之间， 且与所述微腔室的内壁形成有供处理流体流动的 空隙， 所述上腔室部和 /或所述下腔室部中包括至少一个供处理流体进入所述微 腔室的入口和至少一个供处理流体排出所述微腔室的出口。
2. 根据权利要求 1所述的半导体处理装置， 其特征在于， 所述下腔室部 包括形成所述下工作表面的下腔室板和容纳所述下腔室板的下盒装置， 所述下 盒装置包含侧面开口的无盖空腔， 所述下腔室板可从所述侧面开口滑动进入或 者移出所述无盖空腔。
3. 根据权利要求 2所述的半导体处理装置， 其特征在于， 所述下腔室板 包含一吻合与所述无盖空腔形状的下部和位于所述下部之上的上部， 所述上部 的上表面形成所述微腔室的下工作表面。
4. 根据权利要求 3所述的半导体处理装置， 其特征在于， 所述无盖空腔 的侧面形成有开口， 且所述无盖空腔对应于所述下腔室板的下部的边缘形成有 凹槽， 所述下腔室板从所述侧面开口沿所述凹槽滑动进入或者移出所述无盖空 腔。
5. 根据权利要求 4所述的半导体处理装置， 其特征在于， 所述半导体处 理装置还包括一插件， 当所述下腔室板装载进入所述无盖空腔后， 通过将所述 插件插入所述侧面开口固定所述下腔室板在所述无盖空腔内。
6. 根据权利要求 2所述的半导体处理装置， 其特征在于， 所述无盖空腔 的表面包含有可导引流体最终流向同一方向的导流凹槽。
7. 根据权利要求 6所述的半导体处理装置， 其特征在于， 所述导流凹槽 包括排布在所述无盖空腔的下表面的若干个倾斜角度和倾斜方式相同、 互相并 列的斜坡面。
8. 根据权利要求 7所述的半导体处理装置， 其特征在于， 所述斜坡面的 坡底位于所述侧面开口处， 且所述斜坡面的坡底连通于所述导流凹槽的出口。
9. 根据权利要求 1所述的半导体处理装置， 其特征在于， 所述上腔室部 和下腔室部的边缘包含对应的柱位孔， 所述上腔室部和所述下腔室部中的一个 可沿贯穿所述柱位孔的立柱装置的导引在所述打开位置和所述关闭位置之间移 动。
10. 根据权利要求 9所述的半导体处理装置， 其特征在于， 所述上腔室部 包括上腔室板和上盒装置， 所述上盒装置固定于所述立柱装置上， 所述上腔室 板包括支撑于所述上盒装置上的上部和自所述上部向下延伸并穿过所述上盒装 置的中部空腔的下部， 所述下部的下表面形成所述微腔室的下工作表面。
1 1 . 根据权利要求 1 0所述的半导体处理装置， 其特征在于， 其还包括位 置校正装置， 所述位置校正装置包括有校正板和顶板， 所述校正板放置于所述 上腔室板的上部之上， 所述顶板固定于所述立柱装置上， 所述顶板上设置有多 个螺纹孔， 螺栓穿过所述螺纹孔对所述校正板施加压力， 借此来对所述下腔室 板的位置和形状进行调整。
12. 根据权利要求 1 1所述的半导体处理装置， 其特征在于， 所述螺纹孔 分布于所述顶板的不同位置， 在拧松所述螺栓后， 可将所述校正板从上腔室板 上移除， 随后可将所述上腔室板取出。
13. 根据权利要求 1 1所述的半导体处理装置， 其特征在于， 所述上腔室 部与所述立柱装置相对固定， 所述下腔室部可沿所述立柱装置运动， 所述下腔 室部下方还包括一驱动装置， 当所述驱动装置产生向上的驱动力时， 驱动所述 下腔室部从打开位置向关闭位置移动； 当所述驱动装置产生向下的驱动力时， 驱动所述下腔室部从关闭位置向打开位置移动。
14. 根据权利要求 13所述的半导体处理装置， 其特征在于， 所述驱动装 置包括一驱动器和容纳所述驱动器的可伸缩空腔， 所述驱动器为气动驱动器、 电动驱动器、 机械驱动器或者液压驱动器中的一种。
15. 根据权利要求 14所述的半导体处理装置， 其特征在于， 所述立柱装 置包括立柱和套接在所述立柱外表面的套筒， 所述套筒的内表面紧密贴合于所 述立柱的部分外表面。
16. 根据权利要求 15所述的半导体处理装置， 其特征在于， 所述立柱包 括上部、 自上部延伸的第一中部、 自第一中部延伸的第二中部和自第二中部延 伸的底部，
所述上部的外表面还包括第一螺纹， 所述第一中部的外表面包括第二螺纹， 所述第二中部的外表面还包括第三螺纹， 所述套筒的内径大于或者等于所述立 柱的第二中部的直径， 所述套筒套在所述立柱的第二中部的直径上， 其中所述 底部的截面的最短距离>套筒的外径 >套筒的内径 >第二中部的外径>第一中部的 外径 >上部的外径，
配合对应于所述第三螺纹的第三螺帽将所述驱动装置的底部固定于在第三 螺帽和所述立柱的底部之间， 配合对应于所述第二螺纹的第二螺帽将所述上盒 装置固定于在第二螺帽和所述立柱的第二中部的上边缘之间， 配合对应于所述 第三螺纹的第三螺帽将所述顶板固定于在第一螺帽和所述立柱的第一中部的上 边缘之间。
PCT/CN2012/074053 2011-04-15 2012-04-14 一种半导体处理装置 WO2012139527A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US14/111,859 US10121681B2 (en) 2011-04-15 2012-04-14 Semiconductor processing device
EP12770708.1A EP2693461B1 (en) 2011-04-15 2012-04-14 Semiconductor processing device

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
CN201110094239.6 2011-04-15
CN201110094366.6 2011-04-15
CN201110094306.4 2011-04-15
CN201110094233.9A CN102737955B (zh) 2011-04-15 2011-04-15 一种半导体处理装置
CN201110094366.6A CN102738034B (zh) 2011-04-15 2011-04-15 包含处理流体泄漏回收结构的半导体处理装置
CN201110094250.2 2011-04-15
CN201110094239.6A CN102738031B (zh) 2011-04-15 2011-04-15 包含可抽拉腔室的半导体处理装置
CN201110094306.4A CN102738033B (zh) 2011-04-15 2011-04-15 包含改进立柱结构的半导体处理装置
CN201110094250.2A CN102738032B (zh) 2011-04-15 2011-04-15 可校正工作面平整性的半导体处理装置
CN201110094233.9 2011-04-15

Publications (1)

Publication Number Publication Date
WO2012139527A1 true WO2012139527A1 (zh) 2012-10-18

Family

ID=47008830

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2012/074053 WO2012139527A1 (zh) 2011-04-15 2012-04-14 一种半导体处理装置

Country Status (3)

Country Link
US (1) US10121681B2 (zh)
EP (2) EP2998990B1 (zh)
WO (1) WO2012139527A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017513207A (ja) * 2013-12-31 2017-05-25 ウェン、ソフィアWEN, Sophia 半導体ウェハの清浄装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013016941A1 (zh) * 2011-07-29 2013-02-07 无锡华瑛微电子技术有限公司 可调式半导体处理装置及其控制方法
JP5835195B2 (ja) * 2012-11-29 2015-12-24 東京エレクトロン株式会社 乾燥処理用の高圧容器の製造方法及び基板処理装置の製造方法
TWI571951B (zh) * 2014-09-17 2017-02-21 華亞科技股份有限公司 晶圓傳送盒底座檢查裝置及方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5169408A (en) * 1990-01-26 1992-12-08 Fsi International, Inc. Apparatus for wafer processing with in situ rinse
US20060024213A1 (en) * 2004-07-28 2006-02-02 Dainippon Screen Mfg. Co., Ltd. Substrate treating apparatus
CN1806312A (zh) * 2003-06-13 2006-07-19 温子瑛 用于半导体晶圆的薄层化学处理的方法和装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7575638B2 (en) * 2007-02-02 2009-08-18 Lam Research Corporation Apparatus for defining regions of process exclusion and process performance in a process chamber
US7665951B2 (en) * 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
CN102903606B (zh) * 2011-07-29 2016-03-30 无锡华瑛微电子技术有限公司 多腔室半导体处理装置
WO2013016941A1 (zh) * 2011-07-29 2013-02-07 无锡华瑛微电子技术有限公司 可调式半导体处理装置及其控制方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5169408A (en) * 1990-01-26 1992-12-08 Fsi International, Inc. Apparatus for wafer processing with in situ rinse
CN1806312A (zh) * 2003-06-13 2006-07-19 温子瑛 用于半导体晶圆的薄层化学处理的方法和装置
US20060024213A1 (en) * 2004-07-28 2006-02-02 Dainippon Screen Mfg. Co., Ltd. Substrate treating apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2693461A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017513207A (ja) * 2013-12-31 2017-05-25 ウェン、ソフィアWEN, Sophia 半導体ウェハの清浄装置

Also Published As

Publication number Publication date
EP2998990A1 (en) 2016-03-23
US10121681B2 (en) 2018-11-06
EP2693461B1 (en) 2015-11-25
EP2998990B1 (en) 2017-06-07
US20140034238A1 (en) 2014-02-06
EP2693461A1 (en) 2014-02-05
EP2693461A4 (en) 2015-04-22

Similar Documents

Publication Publication Date Title
KR101486781B1 (ko) 가스 유로 구조체 및 기판 처리 장치
TWI518778B (zh) 氣相蝕刻設備
KR20030007610A (ko) 필터
WO2012139527A1 (zh) 一种半导体处理装置
US20050034977A1 (en) Electrochemical deposition chambers for depositing materials onto microfeature workpieces
TWI382447B (zh) 用於半導體晶圓的薄層化學處理之方法及裝置
JP5233560B2 (ja) 遠心機
KR20140045922A (ko) 실시간 액체 입자 카운터(ｌｐｃ) 엔드포인트 검출 방법
US20090306808A1 (en) Automatically replaceable apparatus for collecting byproducts and the controlling method thereof in equipment producing semiconductor
CN102737955B (zh) 一种半导体处理装置
TWI487577B (zh) 用於噴淋頭電極之混合酸洗淨的方法
TWI489532B (zh) 半導體處理裝置
KR101805525B1 (ko) 반도체 웨이퍼 세정 시스템
CN103454334B (zh) 晶圆表面的超微量阴阳离子检测系统
CN103187338B (zh) 模块化半导体处理设备
KR20150080195A (ko) 반도체 공정에서의 잔류 셀레늄 포집장치
WO2015114946A1 (ja) 一軸偏心ネジポンプ
CN102738034B (zh) 包含处理流体泄漏回收结构的半导体处理装置
CN105321837A (zh) 半导体处理设备及其在线故障检测方法
CN204905219U (zh) 模块化半导体处理设备
CN102738031B (zh) 包含可抽拉腔室的半导体处理装置
CN102738032B (zh) 可校正工作面平整性的半导体处理装置
KR20190056864A (ko) 착탈이 가능한 진공 모듈을 포함하는 진공 척
JP4674703B2 (ja) クイッククローズバルブ
RU2342989C1 (ru) Плазмохимическая установка для модифицирования поверхности листовых материалов

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12770708

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 14111859

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2012770708

Country of ref document: EP