WO2012139494A1 - 采用半导体基片的磁阻器件及其制备方法 - Google Patents

采用半导体基片的磁阻器件及其制备方法 Download PDF

Info

Publication number
WO2012139494A1
WO2012139494A1 PCT/CN2012/073792 CN2012073792W WO2012139494A1 WO 2012139494 A1 WO2012139494 A1 WO 2012139494A1 CN 2012073792 W CN2012073792 W CN 2012073792W WO 2012139494 A1 WO2012139494 A1 WO 2012139494A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetoresistive device
electrodes
silicon
magnetic field
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2012/073792
Other languages
English (en)
French (fr)
Inventor
章晓中
万蔡华
高熙礼
王集敏
吴利华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tsinghua University
Original Assignee
Tsinghua University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tsinghua University filed Critical Tsinghua University
Priority to US14/111,683 priority Critical patent/US9130142B2/en
Publication of WO2012139494A1 publication Critical patent/WO2012139494A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • Magnetoresistive device using semiconductor substrate and preparation method thereof
  • the invention belongs to the field of magnetic field detecting and magnetic field sensor materials and device technologies, and particularly relates to a magnetoresistive device using a semiconductor substrate and a preparation method thereof. Background technique
  • magnetoresistance also known as magnetron resistance, magnetoresistance or magnetoresistive
  • magnetoresistance which is highly responsive and magnetically responsive, has been the core of magnetic storage technology and magnetic detection technology and has been the goal of the magnetic storage industry. Giant magnetoresistance currently developed and applied
  • GMR tunneling magnetoresistance
  • Si Semiconductor materials such as silicon (Si) are the mainstream materials in the information industry. Considering the status of these mainstream semiconductor materials in today's information industry, the use of these mainstream semiconductor materials to achieve significant room temperature giant magnetoresistance devices will facilitate the reluctance.
  • the integration of devices with semiconductor devices and technologies is driving significant advances in the traditional semiconductor microelectronics industry to the magnetic electronics industry.
  • the GMR device is composed of a (magnetic material/non-magnetic material) multilayer film, such as a ⁇ 6/0 multilayer film; and the TMR device is composed of a magnetic metal/insulation barrier/magnetic metal sandwich structure, such as Fe 8 . Co 2 . /MgO/ Fe 7 . Co 3 . structure.
  • magnetoresistive devices have a resistance change of 10% to 100% in a 10 Oe magnetic field, and the low magnetic field sensitivity is excellent. But they have very significant drawbacks.
  • their magnetoresistance is isotropic, that is, they cannot be used to sense the direction of the magnetic field;
  • second, their magnetoresistance is generally saturated under a small magnetic field, and cannot be used for sensing.
  • Third, their preparation requires the use of transition metals, rare earth metals, etc., which not only makes them more expensive, but also makes their preparation processes difficult to be compatible with silicon processes. Transition metal is generally avoided in silicon processes because these metals cause uncontrolled doping of silicon and degrade the performance of silicon electronic components.
  • An object of the present invention is to provide a magnetoresistive device using a semiconductor substrate and a method of fabricating the same.
  • the present invention provides a magnetoresistive device comprising: a semiconductor substrate; an oxide layer disposed on a surface of the semiconductor substrate; a plurality of electrodes disposed on the oxide layer; and at least one diode coupled to the electrode Between at least two of the electrodes.
  • the present invention also provides a method of fabricating a magnetoresistive device, comprising: rinsing and trimming a semiconductor substrate; forming an oxide layer on a surface of the semiconductor substrate; forming a plurality of electrodes on the oxide layer; At least one diode is connected between at least two of the electrodes.
  • the present invention provides a silicon-based self-driven magnetic sensor comprising: a silicon substrate; an oxide layer disposed on a surface of the first region of the silicon substrate; a plurality of electrodes disposed on the oxide layer; and at least a diode connected between at least two of the electrodes; and a silicon-based solar cell having a second region of the silicon substrate as a substrate and fabricated on the second region; wherein A power output of the silicon-based solar cell is connected to at least two of the electrodes to output electrical energy.
  • the present invention also provides a non-contact magnetic sensor comprising: a magnetic member for generating a magnetic field, being disposed at a first position and movable to a second position; and a magnetoresistive device according to the present invention, being disposed at Two positions, and sensing the magnetic field of the magnetic member near the magnetoresistive device.
  • the non-contact magnetic sensor of the present invention can detect the motion of an object in a non-contact manner, for example, detecting the speed of various vehicles.
  • the magnetoresistive device of the invention has good high field magnetoresistance characteristics and high low magnetic field sensitivity, and has the advantages of low power consumption, simple device structure, low cost and simple preparation process.
  • FIG. 1 is a schematic structural view of a silicon-based magnetoresistive device according to an embodiment of the present invention, wherein a constant current source and a voltmeter belong to the same digital source meter and are used to test the magnetoresistance performance of the magnetoresistive device;
  • FIG. 4A is a schematic view showing the configuration of the performance test of the silicon-based magnetoresistive device according to the embodiment of the present invention, wherein the current source and the voltmeter Is an independent arrangement and is used to test the magnetoresistance performance of the magnetoresistive device;
  • FIG. 4B is a front view showing the structure of a silicon-based magnetoresistive device according to an embodiment of the present invention;
  • FIG. 4C is a view of a silicon-based magnetoresistive device according to an embodiment of the present invention.
  • FIG. 5 is a flow chart showing the preparation process of a silicon-based magnetoresistive device according to an embodiment of the present invention
  • FIG. 6 is a volt-ampere characteristic of the silicon-based magnetoresistive device of Embodiment 6 in the absence of a magnetic field, a positive magnetic field, and a negative magnetic field. curve;
  • FIG. 7 is a magnetoresistance versus current dependence curve of the silicon-based magnetoresistive device of Embodiment 6;
  • FIG. 8 is a volt-ampere characteristic curve of the silicon-based magnetoresistive device of Embodiment 7 in the absence of a magnetic field, a positive magnetic field, and a negative magnetic field;
  • Figure 9 is a graph showing the magnetoresistance versus magnetic field dependence of the silicon-based magnetoresistive device of Example 7; and Figure 10 is a graph showing the volt-ampere characteristic of the silicon-based magnetoresistive device of Example 8 in the absence of a magnetic field, a positive magnetic field and a negative magnetic field.
  • a magnetoresistive device includes a semiconductor substrate, an oxide layer, a plurality of electrodes, and a diode disposed between the electrodes.
  • the semiconductor substrate in the embodiment described below is exemplified by a silicon substrate or a single crystal silicon substrate, but is not limited thereto, and a substrate of another semiconductor material may be used.
  • the number of electrodes in the device can be four or more.
  • the geometry formed by the lines between the electrodes may be rectangular or other parallelograms, or other geometric shapes.
  • the resistance distribution or resistance value of the device is related to the geometry of such an electrode configuration.
  • the electrode may be made of a common metal material, preferably a metal material capable of forming an ohmic contact with the semiconductor substrate, such as Al, Ti, In, etc., so as to ensure contact resistance between the electrode and the substrate. Smaller.
  • the diode used can be any type of diode, such as a Si-based or GaAs-based diode, or a Zener diode or other type of diode.
  • a diode is placed in the device to meet the requirements of magnetoresistance performance, and two diodes can be connected between the electrodes according to the needs of practical applications.
  • the diode may be connected between at least two electrodes on either side of the geometry of the electrode arrangement, preferably between the electrodes on both ends of at least one long side of the geometry having longer connecting lines between the electrodes .
  • Embodiments of the present invention utilize the electrical resistance properties of semiconductor materials, and the resistivity of the semiconductor substrate employed is preferably greater than 0.1 ⁇ « ⁇ .
  • the silicon substrate according to the embodiment of the present invention the minority carrier lifetime is preferably greater than 10 ⁇ ⁇ ; the mobility of the silicon substrate for silicon in terms of ⁇ is at least 0.1m 2 / Vs, in terms of p-type silicon of at least 0.04m 2 / Vs. This ensures that the mobility of the silicon wafer is large enough. Since the intrinsic magnetoresistance of silicon is proportional to the square of the product of the mobility and magnetic field strength of the silicon wafer, the larger the mobility, the larger the apparent magnetoresistance that the magnetoresistive device can display, and the better the magnetoresistance performance.
  • Example 1 the intrinsic magnetoresistance of silicon is proportional to the square of the product of the mobility and magnetic field strength of the silicon wafer, the larger the mobility, the larger the apparent magnetoresistance that the magnetoresistive device can display, and the better the magnetoresistance performance.
  • the four electrodes were pressed with high-purity soft metal indium (In) (purity greater than 99.9%) and placed on the four corners of the elongated Si wafer.
  • the above parameters are indicated in Figure 1.
  • the device was then placed on a heating table, heated at 300 ° C for 10 minutes, and then allowed to cool to room temperature naturally. So far, a silicon-based magnetoresistive device has been basically prepared. As the final The product's magnetoresistive devices also require a diode to be connected between the electrodes.
  • the obtained silicon-based magnetoresistive device is provided with a SiO 2 oxide layer on the surface of the single crystal Si (100) substrate, and four electrodes are arranged on the oxide layer, and the wiring of the four electrodes is formed in a rectangular shape, wherein
  • the oxide layer has a thickness of 1.6 nm.
  • the prepared silicon-based magnetoresistive device can be characterized by transmission electron microscopy (TEM); the interface structure can also be observed by TEM; the volt-ampere (IV) performance of the magnetoresistive device can be composed of a constant current source and a four-electrode method.
  • Digital source meter for voltmeters eg Keithley 2400 source meter
  • external magnetic field B applied to the device by a superconducting quantum interferometer (SQUID) in a direction perpendicular to the surface of the substrate, the magnetoresistance of the device can be used in a SQUID with a Keithley 2400 source Table measurement.
  • the intrinsic oxide layer of the silicon surface has a thickness of 1.6 nm.
  • the role of the electrode is to connect the constant current source and the voltmeter, and its main function is to connect the silicon wafer and the diode, and an appropriate resistance can be obtained between the connected electrodes; the function of the diode is to increase the external magnetic field. The rate of change of the resistance value of these resistors is applied to achieve the desired magnetoresistance performance.
  • the diode is not shown in Figure 1, the diode is actually present between the two electrodes in the lateral direction of Figure 1, since both the constant current source and the voltmeter in the Keithley 2400 SourceMeter are provided. A diode-like device. Therefore, when the magnetoresistive device of Fig. 1 is tested for magnetoresistance performance, it is not necessary to provide a diode, and the desired magnetoresistance performance can also be tested.
  • Figure 2 is a graph showing the dependence of the magnetoresistance (vertical axis) of the silicon-based magnetoresistive device of the above-described Embodiment 1 on the magnetic induction (horizontal axis) of the magnetic field applied thereto, which is depicted at different currents (20 ⁇ to Under the condition of 325 ⁇ ), the apparent resistance of the device is shown as the magnetic induction of the magnetic field changes.
  • a critical magnetic field for example, when the current is 180 ⁇ , the critical magnetic field is 1.8 Before T
  • the resistance between the two electrodes connected to the voltmeter first increases slowly.
  • the magnetic field is larger than this critical magnetic field, the magnetic resistance increases sharply.
  • this critical magnetic field is related to the current flowing through the device. As the current increases from 120 ⁇ to 220 ⁇ , the critical magnetic field decreases from 6 ⁇ to 0.5 ⁇ . When the current is further increased, the critical magnetic field is reduced to 0. Therefore, when the current is 250 ⁇ or more, as the magnetic field increases from 0 ⁇ to positive or negative, the resistance rapidly increases. However, at this time, the magnetoresistance effect under a high magnetic field is smaller than that of a slightly smaller current. For example, at a current of 296 ⁇ , the resistance changes by only 1.5 orders of magnitude as the magnetoresistance increases from 0 ⁇ to plus or minus 7 ;. At a current of 220 ⁇ , the resistance changes by 4 orders of magnitude.
  • the magnetoresistance of this size is already one order of magnitude larger than the normal Si-based magnetoresistance.
  • the Si-based normal magnetoresistance is about 50% at 7T.
  • the magnetoresistance 50% means that the voltage ( / /) after applying the magnetic field is 50% larger than the voltage V (0, /) before the magnetic field is applied.
  • the above parameters are indicated in Figure 1.
  • the fabricated device was then placed on a heating table, heated at 300 ° C for 10 minutes, and then naturally cooled to room temperature. So far, a silicon-based magnetoresistive device has been basically prepared. A magnetoresistive device as a final product also requires a diode to be connected between the electrodes.
  • the obtained silicon-based geometric giant magnetoresistance device is provided with a SiO 2 oxide layer on the surface of the single crystal Si (100) substrate, and four electrodes are disposed on the oxide layer, and the geometric configurations of the four electrodes are rectangular, wherein, in the longitudinal direction
  • the oxide layer has a thickness of 1.6 nm.
  • Figure 3 is a graph showing the apparent resistance of the device of Example 2 as a function of the magnetic induction of the magnetic field under different currents (210 ⁇ to 285 ⁇ ).
  • the silicon-based geometric giant magnetoresistance device prepared by the above method can have a resistance change of more than 10 times under a magnetic field of 1 Torr at room temperature of 300 Torr (i.e., relative to the voltage before the magnetic field is applied, the voltage after the magnetic field is applied)
  • the magnetic field sensitivity is 10 times higher, or the magnetoresistance is 103 %.
  • the magnetic field sensitivity is superior to that of the Si-based magnetoresistive device reported in the prior art.
  • a magnetic reluctance of 10 3 % can be achieved in a magnetic field of 0.5 ⁇
  • a magnetic resistance of 100% can be achieved in a magnetic field of 0.2 , as shown in the figure. 3 is shown.
  • the high-purity soft metal indium In (purity >99.9%) is used to press the electrode on the four corners of the long Si wafer.
  • the above parameters are shown in Figure 1.
  • a silicon-based magnetoresistive device has been prepared.
  • a magnetoresistive device as a final product also requires a diode to be connected between the electrodes.
  • the obtained silicon-based magnetoresistive device is provided with a SiO 2 oxide layer on the surface of the single crystal Si (100) substrate, and four electrodes are disposed on the oxide layer, and the geometric configurations of the four electrodes are rectangular, wherein two in the length direction
  • the oxide layer has a thickness of 1.6 nm.
  • the magnetoresistance performance of the device was measured in the same manner as in Example 1.
  • the silicon-based magnetoresistive device prepared by the above method can have a resistance change of more than 10 times under the condition of a room temperature of 300 K and a magnetic field of 1 ,, and the magnetic field sensitivity is superior to that of the Si-based magnetoresistive device reported in the prior art. .
  • a magnetic reluctance of 10 3 % can be achieved, and a magnetic resistance of 110% can be achieved under a magnetic field of 0.2 T.
  • the obtained silicon-based magnetoresistive device is provided with an A1 2 0 3 oxide layer on the surface of the single crystal Si (100) substrate, and four electrodes are disposed on the oxide layer, and the geometric configurations of the four electrodes are rectangular, wherein, in the longitudinal direction
  • the thickness of the oxide layer is 2.0 nm.
  • the magnetoresistance of the device was measured in the same manner as in Example 1.
  • MR 500%
  • the oxide layer has a thickness of 2.5 nm.
  • the silicon-based magnetoresistive device prepared by the above method can have a resistance change of more than 8 times under the condition of a room temperature of 300 K and a magnetic field of 1 ⁇ .
  • a silicon oxide oxide layer is formed on the Si wafer; four Ti/Al electrodes (A, B, C, D) are deposited on the four corners of the elongated Si wafer.
  • the size of the electrode was 1.0 mm along the length of the Si piece (i.e., the long side of the lateral direction) and 1.0 mm along the width of the Si piece (short side in the longitudinal direction).
  • a Zener diode with a reverse breakdown voltage of 10.1V is connected in parallel between the two electrodes on the long side (such as the electrode AC). So far, a silicon-based magnetoresistive device has been prepared.
  • a preparation process of a silicon-based magnetoresistive device as shown in FIG. 5 can be employed.
  • corrosion, natural oxidation, or deposition may be used to control the thickness of the oxide layer; when depositing an electrode, an appropriate electrode material, electrode position, and electrode shape are selected;
  • the connection between the diodes includes: Select the type of diode, the diode connection position, and the diode turn-on voltage or reverse breakdown voltage according to the actual application.
  • the prepared silicon-based magnetoresistive device can be structurally characterized by a transmission electron microscope (TEM) (such as JEOL-2011 type); the interface structure is also observed by a transmission electron microscope.
  • Digital source meters eg, Keithley Model 2400 and Keithley 2000
  • a current source and voltmeter as shown in Figure 4A for measuring the performance of a magnetoresistive device.
  • the volt-ampere (/-V) performance of the device is measured by the four-electrode method, and a constant current source is supplied from the current source (eg Keithley 2400) to the short side.
  • the upper two electrodes, and the voltage drop between the other short-side upper electrodes is measured by a voltmeter (such as Keithley 2000).
  • the magnetic field S perpendicular to the silicon substrate is provided by a 1.2 T permanent magnet or a 0.4 T electromagnet.
  • Two pairs of closely spaced electrodes on the Si surface ie, the two ends on the short side) are used to connect the Keithley 2400 current source to the Keithley 2000 voltmeter, as shown in Figure 4A.
  • the intrinsic oxide layer of the silicon surface is 1.6 nm.
  • the Keithley 2400 source meter can be used alone for measurement. Since a Zener diode-like device is already connected between the current source and the voltmeter built into the Keithley 2400 source meter, no other diodes are connected between the electrodes in Embodiments 1 to 5. However, actually, from Embodiment 1 to Embodiment 10, the physical structure of the magnetoresistive device is uniform, and as shown in Figs. 4B and 4C, it is composed of a silicon substrate, an electrode, and a diode.
  • Fig. 6 is a graph showing the volt-ampere (/-V) characteristic curve of the silicon-based magnetoresistive device obtained in the present embodiment at room temperature, with or without a magnetic field.
  • the horizontal axis indicates the voltage between the electrodes measured by the voltmeter, and the vertical axis indicates the current supplied by the current source.
  • the volt-ampere characteristic curve of the magnetoresistive device of Example 6 under the condition that the magnetic induction of the magnetic field is 0, 1.2 T, -1.2 T is respectively depicted in Fig. 6. It can be seen from Fig. 6 that under the condition of zero magnetic field, an inflection point appears on the /-V curve. Before and after this inflection point, a sudden change in the apparent differential resistance of the sample device occurred.
  • the inflection point corresponds to a current of approximately 0.6 mA.
  • the occurrence of the inflection point is related to the diodes set in the device.
  • a diode has a switching characteristic, that is, when the voltage drop across the diode is less than a certain turn-on voltage i/ c , the resistance of the diode is close to infinity; and when the voltage divider on the diode approaches or exceeds, its resistance is rapid. Decrease to 0. As shown in FIG.
  • the voltmeter detects the voltage between the electrodes CD; and when the partial pressure on the diode is greater than ⁇ /c , the diode is in a short circuit condition, the voltmeter detects The voltage between AD. Since the pitch L c between the electrodes AC and BD is much larger than the pitch W c between the electrodes AB and CD, the silicon resistance between the electrodes AC and BD is much larger than the silicon resistance between the electrodes AB and CD, respectively.
  • the voltage between the electrodes AD is much larger than the voltage between the electrodes CD, so when the partial pressure of the diode passes near i/ c , the voltage detected by the voltmeter will be from a small value (the voltage between the electrodes CD). Soar to a large value (voltage between electrodes AD). Since the volt-ampere characteristics of the silicon-based magnetoresistive device are related to the on and off states of the diode, an inflection point appears on the volt-ampere curve when the diode is in a state transition. When the inflection point occurs, the partial pressure on the diode is equal to U G . The voltage division across the diode is determined by the voltage between the ACs.
  • the magnetic field can regulate the voltage between the AC through the normal magnetoresistance effect or the Hall effect, that is, the partial pressure of the diode, thereby affecting the transition of the diode from the open state to the short circuit state.
  • the magnetic field S can control the conduction and cut-off of the diode; from the volt-ampere characteristic of the device, the magnetic field S can affect the current at the inflection point.
  • Fig. 7 shows the magnetoresistance (MR) versus current dependence curves of the magnetoresistive device of Example 6 under the conditions that the magnetic induction of the magnetic field was 1.2 T, -1.2 T, respectively.
  • a positive 1.2 T magnetic field will cause the current at the inflection point to decrease from 0.6 mA to 0.5 mA, while a negative 1.2 T magnetic field will increase the current at the inflection point to 0.7 mAo.
  • the current at the inflection point moves with the magnetic field. In the process, accompanied by a huge magnetoresistance effect.
  • MR(B, I) is the apparent magnetoresistance of the device when the applied current is / and the applied magnetic field is S.
  • the magnetoresistive magnetic sensor can not only sense the magnitude of the magnetic field but also the direction of the magnetic field.
  • the maximum positive reluctance reaches 2x10 4 %
  • the negative reluctance reaches almost -100%, as shown in FIG. Both of these values are much larger than those in silicon.
  • the normal magnetoresistance (approx. 3.0% at 1.2 T magnetic field) is much larger than the positive and negative reluctance of the magnetic sensors invented by Delmo and Schoonus et al.
  • the amplification effect of the diode on the magnetoresistance in the magnetoresistive device of the embodiment of the invention can be understood as the magnetic field regulating the transition of the diode from the open state to the short-circuit state by regulating the partial pressure between the respective electrodes. This transition will result in a large change in the voltage at the output of the device, such as between the electrodes CD. This is why such a magnetoresistive device (a diode and a silicon substrate having a large L c /W c ratio) can amplify the magnetoresistance of silicon itself.
  • the scheme for testing a silicon-based magnetoresistive device in Fig. 4A is applicable not only to the embodiment 6, but also to the embodiment 7 to the embodiment 10.
  • the current source and voltmeter are separate devices, and a diode is connected between at least two electrodes (e.g., electrode AC) in the magnetoresistive device under test.
  • Example 7
  • a Zener diode with a reverse breakdown voltage of 10.1V is connected in parallel between the two electrodes on the long side. The above parameters are indicated in Figure 4C.
  • the silicon-based magnetoresistive device referred to in the seventh embodiment is thus completed.
  • the performance measurement method of the device is the same as in Embodiment 6.
  • 8 shows the condition that the magnetic resistance of the magnetoresistive device of Embodiment 7 is 0, 1.2 T, -1.2 T in a magnetic field.
  • FIG. 9 shows the dependence of the magnetoresistance (MR) of the silicon-based magnetoresistive device of Example 7 on the magnetic induction of the magnetic field under the condition of a current of 0.43 mA.
  • the silicon-based magnetoresistive device prepared by the above method can change the resistance of the output end by more than 50 times under the condition of 300 K at room temperature and 0.4 ⁇ magnetic field, and the magnetic field sensitivity is superior to the Si-based magnetoresistive device reported in the prior art. performance. Under certain conditions (such as 0.43mA) and a magnetic field of 0.4T, 5 ⁇ 10 3 % of the magnetic reluctance can be achieved; under the condition of magnetic field magnetic induction of 0.065 ,, 30% of the reluctance can be achieved. , as shown in Figure 8 and Figure 9. The low field magnetic field sensitivity of this size can be compared to the InSb based magnetoresistance device invented by Solin et al. Example 8
  • a diode with a forward turn-on voltage i/ c of 0.7V is connected in parallel between the two electrodes on the long side.
  • the silicon-based magnetoresistive device referred to in the eighth embodiment is thus completed.
  • Fig. 10 shows the volt-ampere characteristic curve of the silicon-based magnetoresistive device of Example 8 under the conditions that the magnetic induction of the magnetic field was 0, 1.2 T, -1.2 T.
  • the divided voltage of the diode is equal to i/ c . Therefore, by selecting a diode with a small i/ c , the current at the inflection point can be reduced, thereby reducing the power consumption of the device.
  • the switching voltage of the selected diode since the switching voltage of the selected diode is small, the operating voltage and current of the device can be greatly reduced.
  • the inflection current of the volt-ampere characteristic curve of Embodiment 8 is 20 ⁇ , and the corresponding current source supply voltage is approximately IV (this voltage is different from the measurement voltage of the voltmeter Keithley 2000 under the four-electrode measurement arrangement condition).
  • the magnetoresistive device of the embodiment of the present invention can operate in a lower voltage and power range by reducing the value of the stabilizing voltage of the Zener diode.
  • the magnetoresistance performance (including low magnetic field sensitivity) of the magnetoresistive device of the embodiment of the present invention can be further improved by selecting a diode having a large differential conductance near the turn-on voltage.
  • a GaAs light-emitting diode with a forward turn-on voltage of 2.5 V is connected in parallel between the two electrodes on the long side.
  • the silicon-based magnetoresistive device referred to in Embodiment 9 has been completed. The performance measurement method of this device is the same as that of Embodiment 6.
  • the magnetoresistive device exhibits 100% magnetoresistance behavior in a 1.2T magnetic field, and because of the use of a GaAs LED, an external magnetic field can be used to control the bias voltage across the diode to control its luminous power. For example, at zero magnetic field, the diode does not emit light at the inflection point current. But after adding a positive 1.2T magnetic field, the diode begins to glow. In Embodiment 9, the coupling of the magneto-optical electricity can be realized even in the same device.
  • the silicon wafer was first etched in a 10% hydrofluoric acid (HF) solution for 10 minutes to remove the intrinsic oxide layer on the silicon surface. After the silicon wafer is taken out from the HF solution, the four indium (In) electrodes are rapidly cold pressed to the fourth of the elongated Si wafers. On the corner.
  • a silicon-based diode with a forward-on voltage of 0.7V is connected in parallel between the two electrodes on the long side.
  • the silicon-based magnetoresistive device referred to in the tenth embodiment is thus completed.
  • the performance measurement method of the device is the same as in Embodiment 6.
  • the magnetoresistive device exhibits 40% positive magnetoresistance in a positive 1.2T magnetic field and 30% negative magnetoresistance in a negative 1.2T magnetic field. Compared with the high-resistivity silicon-based magnetoresistance device, the magnetoresistance effect is small, but it is still significant. Moreover, this embodiment also proves that even if the intrinsic silica layer is not present (i.e., the thickness of the oxide layer is 0), the magnetoresistance effect can still be exhibited.
  • the Si-based magnetoresistive device of the above-described embodiment of the present invention performance comparable to that of the structural magnetoresistance designed by Solin et al. in the prior art can be achieved, and large magnetoresistance performance (10 5 % under a magnetic field of 7 T) The magnetoresistance and no signs of saturation) and excellent low magnetic field sensitivity (10 2 % magnetoresistance at 0.2 T magnetic field; 30% magnetoresistance at 0.065 T magnetic field).
  • This performance has higher magnetoresistance values and a more sensitive low field magnetoresistance effect than the magnetoresistive devices designed by Delmo and Schoonus et al. in the prior art.
  • the magnetoresistive device of the present invention can operate in a lower voltage range (about 10V) and consumes less power (on the order of lmW and below). This device can also be used to sense large magnetic fields as well as the direction of the magnetic field.
  • the magnetoresistive device of the present invention in addition to the electrode materials commonly used in the silicon process, such as Al, Ti, etc., other metal elements are not used, so that the existing silicon process manufacturing technology can be used for production, and It can be integrated into existing silicon-based microelectronic devices, giving traditional microelectronic devices more abundant performance, such as magnetron control functions, etc., which is beneficial to the microelectronics industry to upgrade to the magnetic electronics industry.
  • the structure of the magnetoresistive device of the present invention is also very simple. For large magnetic fields and very small magnetic fields, the sensitivity of the magnetoresistance is high. From the viewpoint of the preparation process, the entire manufacturing process of the magnetoresistive device of the embodiment of the present invention is very simple, the source of raw materials is rich, and the environment is friendly. Therefore, this device has a good potential application in the field of magnetic field sensors and disk read heads. Practical application of the magnetoresistive device of the present invention
  • Silicon-based self-driven magnetic sensor Since the current mainstream solar cell is a silicon-based solar cell, the output power of the solar cell can exceed 10 mW/cm 2 , and the power consumption of the silicon-based magnetoresistive device of the present invention is lmW/ Cm 2 and below, so that solar cells and silicon-based geometric giant magnetoresistance devices can be fabricated in different regions by non-uniform doping on a piece of finger-sized silicon wafer, and the two are connected by wires; The positive and negative electrodes of the constant current source of the silicon-based magnetoresistive device are connected to the positive and negative electrodes of the solar cell, thereby forming a silicon-based self-driven magnetic sensor. The sensor can be carried and used flexibly without the need for an external power supply.
  • Silicon-based magnetoelectronic device The input-output characteristic (/-V characteristic) of the magnetoresistive device of the present invention under zero magnetic field has shown a nonlinear characteristic, that is, a segmentation characteristic as shown in Fig. 6.
  • a certain critical current the apparent resistance is small, which is ohms.
  • the silicon-based magnetoresistive device of the present invention has the basic characteristics of a magnetoelectronic device: the modulation of the volt-ampere characteristics of the device by the magnetic field.
  • One of the advantages of magnetic regulation over electrical regulation is non-contact regulation, which makes the magnetoresistive device of the present invention suitable for applications where it is inconvenient to connect wires.
  • Non-contact type magnetic sensor can be realized by the magnetoresistive device of the present invention.
  • a sensor can be used as a speed measuring device such as a bicycle or a gear.
  • a silicon-based magnetoresistive device of the present invention is fixedly mounted on the front support frame of the bicycle, and a magnetic component (such as a magnet) is mounted on the front spoke of the bicycle.
  • a magnetic component such as a magnet
  • the magnetoresistive device By recording the change time of the apparent resistance of the magnetoresistive device, and in conjunction with other parameters, the speed of the bicycle can be measured.
  • the magnetoresistive device can also be used to measure gear speed or vehicle speed, and the like.
  • the working magnetic field required for the silicon-based magnetoresistive device of the present invention is on the order of 100 mT or more.
  • the magnetic induction strength of the surface of the common NdFeB permanent magnet and the ferrite permanent magnet can easily reach the order of 100 mT, and thus the magnetoresistive device of the present invention is feasible.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)

Description

采用半导体基片的磁阻器件及其制备方法 技术领域
本发明属于磁场检测和磁场传感器材料以及器件技术领域，特别 涉及一种采用半导体基片的磁电阻器件及其制备方法。 背景技术
效应巨大和磁场响应度灵敏的磁致电阻（也称为磁控电阻， 磁电 阻或磁阻）效应， 作为磁存储技术和磁检测技术的核心， 一直是磁性 存储工业界孜孜以求的目标。 目前开发并且获得应用的巨磁电阻
(GMR) 和隧穿磁电阻（TMR)器件主要是基于磁性金属材料。 硅 (Si)等半导体材料是信息工业中的主流材料， 考虑到这些主流半导体 材料在当今信息工业中的地位，采用这些主流半导体材料实现显著的 室温巨磁电阻器件，将可以方便地将磁阻器件与半导体器件和技术集 成， 推动传统的半导体微电子工业向磁电子工业升级， 意义重大。
传统的巨磁阻器件（例如参见期刊： Journal of Applied Physics, 期 刊号： 69; 1991年， 首页： 4774)、 隧穿磁电阻器件（例如参见期刊： Nature Materials, 期刊号： 3， 2004年， 首页： 862 ) 具有非常优异的 低磁场灵敏度， 较小的工作电压和功耗。 其中 GMR器件由 （磁性材 料 /非磁性材料） 多层膜构成， 如 ^6/0 多层膜； 而 TMR器件由磁 性金属 /绝缘层势垒 /磁性金属的三明治结构构成， 如 Fe8。Co2。/MgO/ Fe7。Co3。结构。 这些磁电阻器件在 10 Oe磁场下， 电阻变化可以达到 10%〜100%的量级， 低磁场灵敏度非常优异。 但是它们有非常显著 的缺点。一是它们的磁电阻是各向同性的， 即它们不能用来感应磁场 的方向； 二是它们的磁电阻一般在小磁场下就饱和了， 不能用来感应 中强磁场； 三是它们的制备需要使用过渡族金属、 稀土金属等， 这不 仅使其价格较贵， 且其制备工艺不易与硅工艺兼容。在硅工艺中一般 都尽量避免使用过渡族金属， 因为这些金属会引起硅的不可控掺杂， 降低硅电子元器件的性能。
2009年， Delmo等人 (期刊： Nature, 期刊号： 457， 2009年， 首 页： 1112 )发明了纯 Si基的磁电阻器件。他们的器件实现了室温 300 K 以及磁场 3 T条件下， 103%的磁电阻。 这个磁阻数值比 Si中正常的 磁电阻大 2个数量级， 为实现实用化的硅基磁电阻器件带来了希望。 但是该器件的低场磁场灵敏度较低，且器件需要工作在大电压（100V 级） 和大功率 （0.1W~1W) 的条件下， 距离实际工业应用还存在较 大的差距。 同年， Schoonus等人 (期刊： Journal of Physics D: Applied Physics, 期刊号： 42， 2009年， 首页： 185011)亦在纯 Si中发现了显 著的磁电阻效应， 在 1 T磁场下实现了 103%的磁阻。 不过和 Delmo 的情况类似， 这种器件的工作电压和功耗非常大， 甚至大于 Delmo 的， 因此实际的应用价值很有限。
除了 Si基巨磁阻材料， 其他体系亦能实现显著的磁阻特性， 且 低场灵敏度和功耗都能很低， 如 Solin等人 (期刊： Science, 期刊号： 289， 2000 年， 首页： 1530)发明的锑化铟 /金 (InSb/Au)结构磁阻。 这 种磁电阻器件由中心的金圆盘和环绕这个金圆盘的 InSb圆环构成。 这种结构能在 0.05 T磁场下实现 100%的表观磁电阻性能， 接近商用 巨磁电阻和隧穿磁电阻器件的性能。虽然性能优异， 但是这种器件的 结构较复杂， 导致制备工艺也很复杂， 而且原料成本较高， 器件的小 型化比较困难。 这些缺点限制了它的大规模推广。 发明内容
本发明的目的是提供一种采用半导体基片的磁阻器件及其制备 方法。 本发明提供一种磁阻器件， 包括： 半导体基片； 氧化层， 设置在 所述半导体基片的表面； 若干个电极， 设置在所述氧化层上； 以及至 少一个二极管， 连接在所述电极中的至少两个电极之间。
本发明还提供一种磁阻器件的制备方法， 包括： 将半导体基片漂 洗干净并进行裁剪； 在所述半导体基片的表面形成氧化层； 在所述氧 化层上形成若干个电极；以及在所述电极中的至少两个电极之间连接 至少一个二极管。
本发明提供一种硅基自驱动磁敏传感器，包括：硅基片；氧化层， 设置在所述硅基片的第一区域的表面； 若干个电极， 设置在所述氧化 层上；以及至少一个二极管，连接在所述电极中的至少两个电极之间； 以及硅基太阳能电池，以所述硅基片的第二区域作为基片并制作在所 述第二区域上； 其中， 所述硅基太阳能电池的电源输出端连接所述电 极中的至少两个， 以输出电能。
本发明还提供一种非接触式磁敏传感器， 包括： 磁性部件， 用于 产生磁场， 被设置在第一位置并可向第二位置运动； 以及根据本发明 的磁阻器件， 被设置在第二位置， 并感测到所述磁性部件在靠近所述 磁阻器件时的磁场。本发明的非接触式磁敏传感器可以以非接触方式 检测物体的运动， 例如检测各种车的速度。
本发明的磁阻器件具有很好的高场磁阻特性和很高的低磁场灵 敏度，并具有功耗低、器件结构简单、成本低和制备工艺简单等优点。
以下结合附图详细描述本发明的实施例。 附图说明
图 1为根据本发明实施例的硅基磁阻器件的结构示意图，其中的 恒流源和电压表属于同一个数字源表并用于测试该磁阻器件的磁电 阻性能；
图 2示出实施例 1的硅基磁阻器件的磁阻与高磁场依赖特性； 图 3示出实施例 2的硅基磁阻器件的磁阻与低磁场依赖特性； 图 4A为根据本发明实施例的硅基磁阻器件进行性能测试的配置 示意图，其中的电流源和电压表是独立的设置并用于测试该磁阻器件 的磁电阻性能； 图 4B是根据本发明实施例的硅基磁阻器件的结构正 视图； 图 4C是根据本发明实施例的硅基磁阻器件的结构俯视图； 图 5为根据本发明实施例的硅基磁阻器件的制备工艺流程图； 图 6为实施例 6的硅基磁阻器件在无磁场、正磁场和负磁场条件 下的伏安特性曲线；
图 7为实施例 6的硅基磁阻器件的磁电阻对电流依赖曲线； 图 8为实施例 7的硅基磁阻器件在无磁场、正磁场和负磁场条件 下的伏安特性曲线；
图 9为实施例 7的硅基磁阻器件的磁电阻对磁场依赖曲线； 以及 图 10为实施例 8的硅基磁阻器件在无磁场、 正磁场和负磁场条 件下的伏安特性曲线。 具体实施方式
下面的实施例可以使本领域技术人员更全面地理解本发明的具 体实施方式， 但不以任何方式限制本发明。
根据本发明实施例的磁阻器件包括半导体基片、氧化层、若干个 电极以及设置在电极之间的二极管。以下所述实施例中的半导体基片 是以硅基片或单晶硅基片为例， 但并不限于此， 也可以采用其它半导 体材料的基片。器件中电极的数目可以是 4个或更多。 电极之间的连 线所形成的几何形状可以是矩形或其它平行四边形，也可以是其它的 几何形状。 器件的电阻分布或电阻值与这种电极配置的几何形状相 关。根据本发明的实施例， 电极可以采用普通的金属材料， 优选是采 用可与半导体基片形成欧姆接触的金属材料， 如 Al、 Ti、 In等， 这 样可以保证电极与基片之间的接触电阻较小。本发明的磁阻器件中所 采用的二极管可以是任何类型的二极管，例如 Si基或 GaAs基二极管， 也可以是稳压二极管或其它类型的二极管。通常在器件中设置一个二 极管就可以满足磁阻性能的需要，也可以根据实际应用的需要在电极 之间连接两个二极管。二极管可以连接在电极配置的几何形状的任一 边线上的至少两个电极之间，优选连接在该几何形状中电极之间具有 较长连接线的至少一个长边的两端上的电极之间。
本发明的实施例利用了半导体材料的电阻性能，所采用的半导体 基片的电阻率优选为大于 0.1 Ω·«η。
根据本发明实施例， 硅基片的少子寿命优选大于 10 μδ ; 硅基片 的迁移率对于 η型硅而言至少为 0.1m2/Vs， 对于 p型硅而言至少为 0.04m2/Vs。 这样可以保证硅片的迁移率足够大。 因为硅的本征磁电 阻与硅片的迁移率及磁场强度乘积的平方成正比， 迁移率越大， 磁阻 器件所能显示的表观磁电阻就越大， 因而磁阻性能就越好。 实施例 1
制备硅基磁电阻器件：
(1)将电阻率为 3000 Ω·«η的 n型 Si ( 100 ) 基片用酒精漂洗干 净， 并将其裁剪成长 L =7 mm, 宽 W= 3 mm的长条状， 如图 1所示；
(2)将长条状 n型 Si ( 100 ) 基片于室温大气条件下放置 3小时 (h), 在 Si基片的表面氧化生成一层 8102氧化层；
(3) 再用高纯软金属铟 (In) (纯度大于 99.9%)压制 4个电极， 并 分别设置在长条状 Si片的四个角上。 每个电极的尺寸为沿 Si片的长 边方向 （即横向） 0.5 mm, 沿 Si片的短边方向 （即纵向） 1.4mm。 因此， 在长边方向上的两个电极之间的间距 Lc = 6 mm, 在短边方向 上的两个电极之间的间距 Wc = 0.2 mm。上述参量如图 1中标示所示。 随后将器件置于加热台上， 在 300°C下加热 10 分钟， 然后使其自然 冷却至室温。至此一个硅基磁电阻器件就基本制备完成了。作为最终 产品的磁阻器件还需要在电极之间连接二极管。
得到的硅基磁电阻器件在单晶 Si ( 100)基片表面设有 Si02氧化 层， 在氧化层上设置 4个电极， 4个电极的连线构成的几何形状为矩 形， 其中， 在长边方向上的电极间距 Lc与在短边方向上的电极间距 Wc的比值为 30， 即 Lc/Wc =30。 其中， 氧化层的厚度为 1.6 nm。
所制备的硅基磁电阻器件可以利用透射电子显微镜 (TEM)进行 结构表征；界面结构同样可以用 TEM进行观察；磁阻器件的伏安 (IV) 性能可以用四电极法由包含恒流源和电压表的数字源表 （例如 Keithley2400源表） 测量； 由超导量子干涉仪 （SQUID) 以垂直于基 片表面的方向向器件施加外部磁场 B，器件的磁阻性能可以在 SQUID 中用 Keithley2400源表测量。 Si表面两对相距较近的电极分别用来接 数字源表中的恒流源和电压表， 如图 1所示。在该实施例的硅基磁电 阻器件中， 硅表面的本征氧化层的厚度为 1.6 nm。
在该实施例中， 电极的作用除了用于连接恒流源和电压表， 其主 要作用是连接硅片和二极管， 在连接的电极之间可获得适当的电阻； 二极管的作用是加大外部磁场作用下这些电阻的电阻值变化率，从而 实现期望的磁阻性能。
应该注意的是， 尽管图 1中没有示出二极管， 但是实际上二极管 存在于图 1中横向的两个电极之间，因为在 Keithley2400数字源表中 的恒流源与电压表之间都设置有类似二极管的装置。因此在图 1的磁 阻器件进行磁阻性能测试时可不必再设置二极管，也同样可以测试出 期望的磁阻性能。
图 2示出上述实施例 1的硅基磁电阻器件在室温下的磁阻 (纵轴） 与对其施加的磁场的磁感应强度（横轴） 的依赖关系， 其中描绘了在 不同电流 (20μΑ至 325μΑ)的条件下， 随着磁场的磁感应强度的变化 所呈现的器件表观电阻的变化曲线。从图 2可以看出， 随着磁场的增 加， 在某一个临界磁场（例如， 当电流为 180 μΑ时， 临界磁场为 1.8 T) 之前， 连接电压表的两个电极之间的电阻首先缓慢地增加。 当磁 场大于这个临界磁场时， 磁阻急剧地增加。而且这个临界磁场与流过 器件的电流有关。随着电流从 120 μΑ增加到 220μΑ， 临界磁场从 6 Τ 降低为 0.5 Τ。 当电流进一步增加时， 临界磁场减为 0， 因此在电流为 250μΑ以上时， 随着磁场从 0Τ往正或者负的方向增加， 电阻都迅速 地增加。不过此时高磁场下的磁电阻效应较稍小电流的磁电阻有所减 小。 如在电流为 296μΑ的条件下， 随着磁阻从 0 Τ增加到正负 7 Τ, 电阻只变化了 1.5个数量级； 而在电流为 220μΑ的条件下， 电阻变化 了 4个数量级。 不过即使在很大的电流条件下， 如电流为 325μΑ时， 虽然电阻只变化了约 5倍 （磁电阻 MR 500% ) , 但是这个大小的磁 电阻已经比正常的 Si基磁电阻大 1个数量级。 Si基正常磁电阻， 在 7T条件下， 为 50%左右。
这里的磁电阻定义为 MR( I)=[V(B, I)-V(0, 1)]/V(0, 7)] l00% 其中 3为磁场， /为电流， V为电压。 这里的磁电阻 50%是指相 对于没有加磁场之前的电压 V (0， /)， 加磁场后的电压 ( ， /)大 出了 50%。 这里， 磁电阻定义为 MI^B, I)=[V(B, I)-V(0, 1)1 V(0, 7)]x l00%。
实施例 1中的磁阻器件之所以拥有如此巨大的磁电阻数值，是因 为二极管的放大效果以及硅基片的尺寸具有较大的 LcvWc比值。 实施例 2
制备硅基磁电阻器件：
(1) 将电阻率为 3000 Ω·«η的 n型 Si ( 100 ) 基片用酒精漂洗干 净， 并将其裁剪成长 L =7 mm, 宽 W = 3 mm的长条状。
(2) 将长条状 n型 Si ( 100 )基片于室温大气条件下放置 3小时， 在 Si基片的表面氧化生成一层 8102氧化层；
(3) 再用高纯软金属铟 In (纯度 >99.9% ) 压制 4个电极， 并将其 分别置于长条状 Si片的四个角上。 电极的尺寸为沿 Si片的长度 （长 边或横向）方向 0.5 mm,沿 Si片的宽度（短边或纵向）方向 1.45mm。 因此 Lc = 6 mm， Wc = 0.1 mm。 上述参量如图 1中标示所示。 随后将 制作的器件置于加热台上， 在 300°C下加热 10 分钟， 然后自然冷却 至室温。至此一个硅基磁电阻器件就基本制备完成了。作为最终产品 的磁阻器件还需要在电极之间连接二极管。
得到的硅基几何巨磁电阻器件在单晶 Si( 100)基片表面设有 Si02 氧化层， 在氧化层上设置 4个电极， 4个电极的几何配置为矩形， 其 中， 在长度方向上的两个电极之间的间距 Lc与在宽度方向上的两个 电极之间的间距 Wc的比值为 60， 即 LoWc =60。 其中， 氧化层的厚 度为 1.6 nm。
器件的磁阻性能的测量方法同实施例 1。 图 3描绘了在不同电流 (210μΑ至 285μΑ)的条件下， 随着磁场的磁感应强度的变化所呈现的 实施例 2的器件表观电阻的变化曲线。
用上述方法制备的硅基几何巨磁电阻器件，在室温 300Κ条件下， 在 1 Τ的磁场下， 其电阻变化也可以达到 10倍以上 （即相对于没有 加磁场前的电压，加磁场后电压增大了 10倍，或者说磁电阻为 103%)， 磁场灵敏度优于现有技术已报道的 Si基磁电阻器件的性能。 在某些 电流 （如 225 μΑ至 250 μΑ) 的条件下， 在 0.5 Τ磁场下， 即可实现 103%的磁阻， 在 0.2Τ磁场下， 也可以实现 100%的磁阻大小， 如图 3 所示。 这个大小的低场磁场灵敏度已经可以与 Solin等人发明的 InSb 基磁电阻器件相比拟了。这一器件之所以能实现如此高的低磁场灵敏 度，是因为二极管的放大效果和硅基片的尺寸具有较大的 LcvWc比值 所致。 实施例 3
制备硅基磁电阻器件： (1) 将电阻率为 3000 Ω·«η的 n型 Si ( 100) 基片用酒精漂洗干 净， 并将其裁剪成长 L =7 mm, 宽 W= 3 mm的长条状。
(2) 将长条状 n型 Si ( 100)基片于室温大气条件下放置 24小时， 在 Si基片的表面氧化生成一层 Si02氧化层；
( 再用高纯软金属铟 In (纯度 >99.9%) 压制电极于长条状 Si片 的四个角上。 电极的尺寸为沿 Si片长度方向 0.5 mm, 沿 Si片宽度方 向 1.45mm。 因此 Lc = 6 mm， Wc = 0.1 mm。 上述参量如图 1中标示 所示。至此一个硅基磁电阻器件就制备完成了。作为最终产品的磁阻 器件还需要在电极之间连接二极管。
得到的硅基磁电阻器件在单晶 Si ( 100)基片表面设有 Si02氧化 层， 在氧化层上设置 4个电极， 4个电极的几何配置为矩形， 其中， 在长度方向上的两个电极之间的间距 Lc与在宽度方向上的两个电极 之间的间距 Wc的比值为 60， 即 LcvWc =60。 其中， 氧化层的厚度为 1.6 nm。
器件的磁阻性能的测量方法同实施例 1。
用上述方法制备的硅基磁电阻器件，在室温为 300K、磁场为 1 Τ 的条件下， 其电阻变化也可以达到 10倍以上， 磁场灵敏度优于现有 技术已报道的 Si基磁电阻器件性能。 在某些电流 （如 0.210 mA至 0.257 mA), 磁场为 0.5 T的条件下， 即可实现 103%的磁阻， 在 0.2T 磁场下， 也可以实现 110%的磁阻大小。 实施例 4
制备硅基磁电阻器件：
(1) 将电阻率为 3000 Ω·«η的 n型 Si ( 100) 基片用酒精漂洗干 净， 并将其裁剪成长 L =7 mm, 宽 W= 3 mm的长条状。
(2) 将长条状 n型 Si ( 100) 基片置于脉冲激光沉积设备中， 在 其表面上沉积 2.0nm厚度的 A1203 ; (3) 再用高纯金属 Al (纯度 >99.9%)磁控溅射沉积电极于长条状 Si片的四个角上。 电极的尺寸为沿 Si片的长度方向 0.5 mm, 沿 Si 片的宽度方向 1.45mm。 因此 Lc=6mm， Wc = 0.1 mm。 上述参量如 图 1中标示所示。至此一个硅基磁电阻器件就基本制备完成了。作为 最终产品的磁阻器件还需要在电极之间连接二极管。
得到的硅基磁电阻器件在单晶 Si (100) 基片表面设有 A1203氧 化层，在氧化层上设置 4个电极， 4个电极的几何配置为矩形， 其中， 在长度方向上的两个电极之间的间距 Lc与在宽度方向上的两个电极 之间的间距 Wc的比值为 60， 即 Lc/Wc=60。 其中， 氧化层的厚度为 2.0 nm。 该器件的磁阻性能的测量方法同实施例 1。
用上述方法制备的硅基磁电阻器件，在室温为 300K、磁场为 1 Τ 的条件下， 其电阻变化也可以达到 5倍以上， 即 MR=500%。 实施例 5
制备硅基磁电阻器件：
(1) 将电阻率为 1000 Ω·«η的 n型 Si (100) 基片用酒精漂洗干 净， 并将其裁剪成长 L=7 mm, 宽 W= 3 mm的长条状。
(2) 将长条状 n型 Si (100) 基片置于脉冲激光沉积设备中， 在 其表面沉积 2.5nm厚度的 MgO;
(3) 再用高纯金属 A1 (纯度大于 99.9%) 以磁控溅射工艺沉积 4 个电极于长条状 Si片的四个角上。电极的尺寸为沿 Si片长度方向 0.5 mm, 沿 Si片宽度方向 0.90mm。 因此 Lc=6mm， Wc= 1.2mm。 上 述参量如图 1中标示所示。至此一个硅基磁电阻器件就基本制备完成 了。 作为最终产品的磁阻器件还需要在电极之间连接二极管。
得到的硅基磁电阻器件在单晶 Si (100) 基片表面设有 MgO氧 化层， 4个电极设置在氧化层上， 这些电极的几何配置为矩形， 其中， 在长度方向上的两个电极之间的间距 Lc与在宽度方向上的两个电极 之间的间距 Wc的比值为 5， 即 LcvWc =5。 其中， 氧化层的厚度为 2.5 nm。
用上述方法制备的硅基磁电阻器件，在室温为 300K、磁场为 1 Τ 的条件下， 其电阻变化也可以达到 8倍以上。 实施例 6
制备硅基磁阻器件：
将电阻率为 3000 Ω·αη的 η型 Si ( 100 ) 基片用酒精漂洗干净， 并将其裁剪成长 L =12.0 mm, 宽 W = 2.1 mm的长条状。 如图 4B和 图 4C所示， Si片上形成二氧化硅氧化层；沉积四个 Ti/Al电极（A, B, C, D) 于长条状 Si片的四个角上。 电极的尺寸为沿 Si片长度 （即横 向的长边） 方向 l .Omm, 沿 Si片宽度 （纵向的短边） 方向 1.0mm。 因此长边方向的电极间距 Lc = 10 mm,短边方向的电极间距 Wc = 0.1 mm。 在长边的两个电极 （如电极 AC) 之间并联一个反向击穿电压 为 10.1V的稳压二极管。 至此一个硅基磁阻器件就制备完成了。
本实施例可以采用如图 5所示的硅基磁阻器件的制备流程。如图 5所示， 在形成氧化层时， 可以采用腐蚀、 自然氧化或沉积等手段， 来控制氧化层的厚度； 在沉积电极时， 要选择适当的电极材料、 电极 位置和电极形状； 在电极之间连接二极管包括： 根据实际应用需要选 择二极管的种类、二极管连接位置、 以及二极管的开启电压或反向击 穿电压等参数。在完成器件的结构表征与性能测试后， 整个磁阻器件 的制备过程就完成了。
所制备的硅基磁阻器件可由透射电子显微镜 (TEM) (如 JEOL- 2011型）进行结构表征； 界面结构同样用透射电子显微镜进行观察。 数字源表 （例如 Keithley2400型和 Keithley2000 ) 包括如图 4A所示 的电流源和电压表， 用于测量磁阻器件的性能。器件的伏安 (/-V)性能 用四电极法测量， 由电流源 （例如 Keithley2400) 提供恒流源于短边 上的两个电极， 而由电压表 （例如 Keithley2000) 测量另外一条短边 上电极之间的电压降。 垂直于硅基片的磁场 S由 1.2 T的永磁铁或者 0.4 T的电磁铁提供。 Si表面两对相距较近的电极 （即短边上的两端 电极） 分别用来接 Keithley2400的电流源和 Keithley2000的电压表， 如图 4A所示。 根据本实施例的基于硅基磁阻的磁传感器件， 硅表面 的本征氧化层为 1.6 nm。
在上述的实施例 1至实施例 5中，均可单独使用 Keithley2400源 表进行测量。因为 Keithley2400源表内置的电流源与电压表之间已经 连接有类似稳压二极管的装置，因此在实施例 1至实施例 5中没有在 电极之间再另外连接其他二极管。 但是实际上从实施例 1 到实施例 10， 磁阻器件的物理结构是一致的， 均如图 4B和图 4C所示， 由硅 基片、 电极和二极管构成。
以下结合实施例 6和图 6详细解释本发明实施例的磁阻器件的工 作过程， 以及二极管在磁阻器件中的作用。
图 6示出本实施例得到的硅基磁阻器件在室温、有磁场或无磁场 条件下的伏安 (/-V)特性曲线。其中横轴指示电压表测量的电极之间的 电压， 纵轴指示电流源提供的电流。 图 6中分别描绘了在磁场的磁感 应强度为 0、 1.2T、 -1.2T的条件下， 实施例 6的磁阻器件的伏安特性 曲线。 从图 6可以看出， 在 0磁场的条件下， /-V曲线上出现一个拐 点。在这个拐点前后， 样品器件的表观微分电阻发生了一个从小到大 的突变。 在这一实施例中， 拐点对应的电流约为 0.6 mA。 拐点的出 现与器件中设置的二极管有关。 一般而言， 二极管具有开关特性， 即 当在二极管两端的电压降小于某一个开启电压 i/c时， 二极管的电阻 接近于无穷大； 而当二极管上的分压接近或者超过 时， 它的电阻 迅速减小到 0。 如图 4A所示， 当二极管上的分压小于 i/c时， 此时二 极管处于断路状态， 电压表探测到的是电极 CD之间的电压； 而当二 极管上的分压大于 ί/c时， 二极管处于短路状态， 电压表探测到的是 AD之间的电压。 因为在电极 AC和 BD之间的间距 Lc远大于电极 AB和 CD之间的间距 Wc， 则电极 AC和 BD之间的硅片电阻分别远 大于电极 AB和 CD之间的硅片电阻， 从而使得电极 AD间的电压要 远大于电极 CD间的电压， 因此当二极管的分压经过 i/c附近时， 电 压表探测到的电压会从一个很小的值 (电极 CD之间的电压)窜升至一 个很大的值 （电极 AD间的电压）。 由于硅基磁阻器件的伏安特性与 二极管的开通与截止状态有关，当二极管发生状态转换时使得伏安曲 线上出现拐点。 当拐点出现时， 二极管上的分压就等于 UG。 而二极 管上的分压由 AC之间的电压决定。磁场可以通过正常磁电阻效应或 者 Hall效应来调控 AC之间的电压，也就是二极管的分压，从而影响 二极管从断路状态到短路状态的转变。 从器件的电路角度讲， 磁场 S 可以控制二极管的导通与截止； 从器件的伏安特性角度讲， 磁场 S 可以影响拐点处电流的大小。
图 7分别示出了在磁场的磁感应强度为 1.2T、 -1.2T的条件下， 实施例 6 的磁阻器件的磁电阻 (MR)对电流依赖曲线。 在这个实施例 中，正 1.2 T的磁场将导致拐点处的电流从 0.6mA降低至 0.5 mA，而 负 1.2 T的磁场却使拐点处的电流增大至 0.7 mAo在拐点处的电流随 磁场移动的过程中， 伴随着巨大的磁电阻效应。 这里， 磁电阻定义为 MR(B, I)=[V(B, I)-V(0, 1)1 V(0, 7)] l00%, 其中 /)是当外加电流为 I、 外加磁场为 B时， 电压表所探测到的电压值； v(o, )是当外加电流 同样为 I、但是外加磁场为 0时， 电压表所探测到的电压值。 MR(B, I) 是外加电流为 /、 外加磁场为 S时， 器件的表观磁电阻。 而且从拐点 处的电流随着磁场正向或者反向增加而分别向低电流或者高电流端 移动的趋势来看， 得到的表观磁电阻在正磁场下为正， 而在负磁场下 为负。 因此这种磁电阻磁传感器不仅可以感应磁场的大小， 而且可以 感应磁场的方向。 在本实施例中， 最大的正磁阻达到了 2x l04%， 而 负磁阻几乎达到了 -100%, 如图 7所示。 这两个数值都远大于硅中的 正常磁电阻（在 1.2 T磁场下，大约为 3.0%) ,而且分别远大于 Delmo 和 Schoonus等人发明的磁传感器的正磁阻和负磁阻。
当外加磁场垂直于硅片的表面施加时，因为磁场可以改变长边电 极之间的电阻和短边电极之间的电阻的大小，因此也就可以改变拐点 处的电流 Ic的大小了。磁场通过上移或者下移 /-V曲线上 Ic的位置来 达到放大磁电阻的效果，如图 6中 +1.2T和 -1.2T磁场下的曲线所表示 的那样。
因此，在本发明实施例的磁阻器件中的二极管对磁电阻的放大作 用，可以理解为磁场通过调控各个电极之间的分压来调控二极管从断 路状态向短路状态的转变。 而这种转变将带来器件输出端 （如电极 CD之间 )的电压的巨大变化。这就是这种磁电阻器件（二极管和 Lc/Wc 比值巨大的硅基片） 能够放大硅本身磁电阻的原因。
图 4A中用于测试硅基磁阻器件的方案不仅适用于实施例 6， 还 适用于实施例 7至实施例 10。 其中的电流源和电压表为各自独立的 设备， 在被测试的磁阻器件中的至少两个电极 （例如电极 AC) 之间 连接有二极管。 实施例 7
制备硅基磁阻器件：
将电阻率为 2000 Ω·αη的 n型 Si ( 100 ) 基片用酒精漂洗干净， 并将其裁剪成长 L =12.0 mm, 宽 W= 2.1 mm的长条状。 制备四个铟 (In)电极于长条状 Si片的四个角上。 电极的尺寸为沿 Si片长度方向 1.0mm,沿 Si片宽度方向 1.0mm。因此电极间距 Lc = 10 mm, Wc = 0.1 mm。 在长边的两个电极之间并联一个反向击穿电压为 10.1V的稳压 二极管。 上述参量如图 4C中标示所示。 至此实施例 7所涉及的硅基 磁阻器件就制备完成了。 器件的性能测量方法同实施例 6。 图 8示出 了实施例 7的磁阻器件在磁场的磁感应强度为 0、 1.2T、 -1.2T的条件 下的伏安特性曲线； 图 9示出在电流为 0.43mA的条件下， 实施例 7 的硅基磁阻器件的磁电阻 (MR)对磁场的磁感应强度的依赖曲线。
用上述方法制备的硅基磁阻器件， 在室温 300K、 磁场为 0.4Τ的 条件下， 其输出端的电阻变化也可以达到 50倍以上， 磁场灵敏度优 于现有技术已报道的 Si基磁电阻器件性能。在某些电流（如 0.43mA) 及磁场为 0.4T的条件下， 即可实现 5χ 103%的磁阻； 在磁场的磁感应 强度为 0.065Τ的条件下， 也可以实现 30%的磁阻大小， 如图 8和图 9所示。 这个大小的低场磁场灵敏度可以与上述的 Solin等人发明的 InSb基磁电阻器件相比拟。 实施例 8
制备硅基磁阻器件：
将电阻率为 1000Ω·αη的 n型 Si ( 100 ) 基片用酒精漂洗干净， 并将其裁剪成长 L =12.0mm，宽 W = 2.1mm的长条状。制备四个铟 (In) 电极于长条状 Si 片的四个角上。 电极的尺寸为沿 Si 片长度方向 1.0mm, 沿 Si片宽度方向 1.0mm。 因此电极间距 Lc = lOmm, Wc = 0.1mm。在长边的两个电极之间并联一个正向开启电压 i/c为 0.7V的 二极管。至此实施例 8所涉及的硅基磁阻器件就制备完成了。该器件 的性能测量方法同实施例 6。 图 10示出在磁场的磁感应强度为 0、 1.2T、 -1.2T的条件下， 实施例 8的硅基磁阻器件的伏安特性曲线。
如实施例 6中所述， 在图 6的伏安特性曲线上的拐点处， 二极管 的分压等于 i/c。 因此通过选用 i/c小的二极管， 可以降低拐点处的电 流， 从而降低器件的功耗。在实施例 8中， 因为所选用的二极管的开 启电压较小， 因此器件的工作电压和电流也都可以大幅度降低。如图 10所示， 实施例 8的伏安特性曲线的拐点电流为 20μΑ， 与之对应的 电流源供电电压大约为 IV (此电压不同于在四电极法测量布置条件 下电压表 Keithley2000的测量电压，而是电流源 Keithley2400的输出 电压）， 因此器件的功耗降低至 20μ ¥量级。 通过减小稳压二极管的 稳定电压的数值，本发明实施例的磁阻器件可以工作在更加低的电压 和功率范围内。 而通过选用在开启电压附近微分电导较大的二极管， 本发明实施例的磁阻器件的磁电阻性能（包括低磁场灵敏度）还能进
^■步提! ¾ ° 实施例 9
制备硅基磁阻器件：
将电阻率为 1000Ω·«η的 η型 Si ( 100 ) 基片用酒精漂洗干净， 并将其裁剪成长 L =10.0mm， 宽 W = 2.1mm的长条状。 沉积四个钛 / 铝 (Ti/Al)电极于长条状 Si片的四个角上。 电极的尺寸为沿 Si片长度 方向 l .Omm, 沿 Si片宽度方向 1.0mm。 因此电极间距 Lc = 8mm， Wc = 0.1mm。 在长边的两个电极之间并联一个正向开启电压为 2.5V的 GaAs发光二极管。 至此实施例 9所涉及的硅基磁阻器件就制备完成 了。 该器件的性能测量方法同实施例 6。
该磁阻器件在 1.2T磁场下能呈现 100%的磁电阻行为，而且因为 所使用的是 GaAs发光二极管， 利用外部磁场可以控制二极管上的偏 压， 从而控制它的发光功率。 如在 0磁场下， 在拐点电流处， 二极管 不发光。 但是加入正 1.2T磁场后， 二极管开始发光。 在实施例 9中， 甚至可以在同一器件中实现光磁电的耦合。 实施例 10
制备硅基磁阻器件：
将电阻率为 ΙΟΩ ηι的 n型 Si ( 100 ) 基片用酒精漂洗干净， 并 将其裁剪成长 L =5.0mm， 宽 W = 2.2mm的长条状。 先将硅片于 10% 的氢氟酸 （HF)溶液中腐蚀 10分钟以去除硅表面的本征氧化层。当硅 片从 HF溶液中取出后， 迅速冷压四个铟 (In)电极于长条状 Si片的四 个角上。 电极的尺寸为沿 Si片长度方向 l.Omm, 沿 Si片宽度方向 1.0mm。 因此电极间距 Lc =3.0mm， Wc = 0.2mm。 在长边的两个电极 之间并联一个正向开启电压为 0.7V的硅基二极管。至此实施例 10所 涉及的硅基磁阻器件就制备完成了。器件的性能测量方法同实施例 6。
该磁阻器件能在正 1.2T磁场下显示 40%的正磁电阻；而在负 1.2T 的磁场下展现 30%的负磁电阻。相对于前面高电阻率的硅基磁电阻器 件， 磁电阻效应虽然偏小， 但是依然很显著。 而且该实施例还证明， 即使本征二氧化硅层不存在 （即氧化层的厚度为 0)， 磁电阻效应依 然可以显现。
根据本发明的上述实施例的 Si基磁阻器件， 可以实现可与现有 技术中的 Solin等人设计的结构磁阻相比拟的性能，大的磁阻性能（7 T磁场下， 105%的磁阻，且无饱和迹象）以及优异的低磁场灵敏度（0.2 T磁场下， 102%的磁阻； 0.065T磁场下， 30%的磁电阻性能）。 这个 性能比现有技术中的 Delmo和 Schoonus等人设计的磁阻器件拥有更 高的磁电阻数值和更灵敏的低磁场磁电阻效应。 相对于 Delmo、 Schoonus等人设计的器件，本发明的磁阻器件还能工作在更低的电压 范围 （10V左右） 内且功耗更低 （lmW及以下量级）。 这种器件还能 用来感应大的磁场以及磁场的方向。更重要的是， 在本发明的磁阻器 件的制备过程中， 除了采用硅工艺中常用 Al、 Ti等电极材料， 没有 使用其他金属元素， 因此可以利用现有的硅工艺制造技术进行生产， 并可以集成至现有的硅基微电子器件中，赋予传统的微电子器件更丰 富的性能，如磁控电功能等等，有利于微电子工业向磁电子工业升级。
而且， 本发明的磁阻器件的结构也非常简单。对大磁场和很小的 磁场， 其磁电阻的灵敏度都很高。 从制备工艺的角度来看， 本发明实 施例的磁阻器件的整个制造过程非常简单， 原材料来源丰富， 环境友 好。因此这种器件在磁场传感器和磁盘读头领域有很好的潜在应用前 旦 本发明的磁阻器件的实际应用
( 1 ) 硅基自驱动磁敏传感器： 因为现在的主流太阳能电池是硅 基太阳能电池， 太阳能电池的输出功率可以超过 10mW/cm2， 而本发 明的硅基磁阻器件的功耗为 lmW/cm2及以下量级， 因此可以在一块 指甲盖大小的硅片上， 通过非均匀掺杂， 在不同区域分别制造太阳能 电池和硅基几何巨磁阻器件， 并通过引线将两者连接起来； 硅基磁阻 器件的恒流源的正负极连接太阳能电池的正负极，从而形成硅基自驱 动磁敏传感器。该传感器可以不需要外置电源，便于携带和灵活使用。
(2 ) 硅基磁电子学器件： 本发明的磁阻器件本身在零磁场下的 输入输出特性 （/-V特性） 已经显示了非线性特征， 即如图 6所示的 分段特征。 当电流低于某临界电流时， 表观电阻很小， 为欧姆量级； 当电流达到或者超过此临界电流时， 表观电阻陡升至千欧姆量级， 而 正负磁场可以上移或者下移该临界电流。因此本发明的硅基磁阻器件 已具备磁电子学器件的基本特征： 磁场对器件伏安特性的调制。而磁 调控相对于电调控的优点之一便是非接触式调控，这使本发明的磁阻 器件适于应用于不方便连接导线的场合。
(3 ) 非接触式磁敏传感器： 利用本发明的磁阻器件可以实现非 接触式磁敏传感器。这种传感器可以用作如自行车或者齿轮的计速装 置等。 以自行车计速装置为例， 在自行车的前支撑架上固定安装一个 本发明的硅基磁阻器件， 在自行车前轮辐条上安装磁性部件（如一块 磁铁）。 在自行车行进过程中车轮旋转， 每当磁阻器件与磁铁以非接 触方式交汇时， 磁阻器件的表观电阻将会增加； 而当磁铁远离磁阻器 件时， 器件的表观电阻下降。通过记录磁阻器件的表观电阻的变化时 间， 再配合其他参数， 就能测定自行车的行驶速度了。 当然， 除了自 行车速度， 该磁阻器件还能用于测定齿轮速度或者汽车速度等等。本 发明的硅基磁阻器件所需要的工作磁场为 lOOmT量级或者更优。 而 一般的钕铁硼永磁体和铁氧体永磁铁表面能产生的磁感应强度可以 很容易地达到 lOOmT量级， 因此本发明的磁阻器件是可行的。 以上所述， 仅为本发明较佳的具体实施方式， 但本发明的保护范 围并不局限于此， 任何熟悉本技术领域的技术人员在本发明揭露的技 术范围内， 可轻易想到的变化或替换， 都应涵盖在本发明的保护范围 之内。 因此， 本发明的保护范围应该以权利要求的保护范围为准。

Claims

权 利 要 求
1. 一种磁阻器件， 包括：
半导体基片；
氧化层， 设置在所述半导体基片的表面；
若干个电极， 设置在所述氧化层上； 以及
至少一个二极管， 连接在所述电极中的至少两个电极之间。
2. 根据权利要求 1 的磁阻器件， 其中， 所述半导体基片是硅基 片。
3. 根据权利要求 1 的磁阻器件， 其中， 所述电极包括至少 4个 电极。
4. 根据权利要求 3的磁阻器件， 其中， 所述电极包括 4个电极， 所述几何形状为矩形。
5. 根据权利要求 1 的磁阻器件， 其中， 所述氧化层的厚度小于 或等于 5nm。
6. 根据权利要求 1的磁阻器件，其中，所述氧化层为 Si02，Al203， MgO中的任一种。
7. 根据权利要求 1的磁阻器件， 其中， 所述电极采用金属材料。
8. 根据权利要求 7 的磁阻器件， 其中， 所述电极中的金属与所 述半导体基片形成欧姆接触， 包括金属铟 In、 金属铝 Al、 金属钛 Ti、 金属金 All中的任一种。
9. 根据权利要求 1或 2的磁阻器件， 其中， 所述半导体基片的 电阻率大于 0.1Ω·«η。
10. 根据权利要求 1或 2的磁阻器件， 其中， 所述半导体基片的 少子寿命大于 10 μδ。
11. 根据权利要求 2的磁阻器件， 其中， 所述单晶硅基片的迁移 率对于 η 型硅而言至少为 0.1m2/Vs， 对于 p 型硅而言至少为
Figure imgf000023_0001
12. 根据权利要求 1的磁阻器件， 其中， 所述二极管的正向开启 电压介于 0.01V到 IV之间， 所述二极管的反向击穿电压介于 0.6V 到 20V之间。
13. 根据权利要求 4的磁阻器件， 其中， 所述矩形的长边上的两 个电极之间的间距用 Lc表示， 所述矩形中具有较短连接线的短边上 的两个电极之间的间距用 Wc表示， 且满足： LC NC 5。
14. 根据权利要求 1的磁阻器件， 其中， 在所述电极之间的连接 线构成的几何形状中包括至少一个具有较长连接线的长边，所述二极 管连接在所述至少一个长边的两端上的电极之间。
15. 根据权利要求 14 的磁阻器件， 其中， 所述几何形状中至少 一个具有较短连接线的短边两端上的电极是所述磁阻器件的输出端。
16. 一种磁阻器件的制备方法， 包括：
将半导体基片漂洗干净并进行裁剪；
在所述半导体基片的表面形成氧化层；
在所述氧化层上形成若干个电极； 以及
在所述电极中的至少两个电极之间连接至少一个二极管。
17. 一种硅基自驱动磁敏传感器， 包括：
硅基片；
氧化层， 设置在所述硅基片的第一区域的表面；
若干个电极， 设置在所述氧化层上； 以及
至少一个二极管， 连接在所述电极中的至少两个电极之间； 以及 硅基太阳能电池，以所述硅基片的第二区域作为基片并制作在所 述第二区域上；
其中，所述硅基太阳能电池的电源输出端连接所述电极中的至少 两个， 以输出电能。
18. 一种非接触式磁敏传感器， 包括：
磁性部件， 用于产生磁场， 被设置在第一位置并可向第二位置运 ； 以及
根据权利要求 1至 14中任一项所述的磁阻器件， 被设置在第二 置， 并感测到所述磁性部件在靠近所述磁阻器件时的磁场。
PCT/CN2012/073792 2011-04-14 2012-04-11 采用半导体基片的磁阻器件及其制备方法 Ceased WO2012139494A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/111,683 US9130142B2 (en) 2011-04-14 2012-04-11 Magnetoresistive device having semiconductor substrate and preparation method therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201110093833.3 2011-04-14
CN2011100938333A CN102185100B (zh) 2011-04-14 2011-04-14 一种硅基几何巨磁电阻器件及其制备方法

Publications (1)

Publication Number Publication Date
WO2012139494A1 true WO2012139494A1 (zh) 2012-10-18

Family

ID=44571230

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2012/073792 Ceased WO2012139494A1 (zh) 2011-04-14 2012-04-11 采用半导体基片的磁阻器件及其制备方法

Country Status (3)

Country Link
US (1) US9130142B2 (zh)
CN (1) CN102185100B (zh)
WO (1) WO2012139494A1 (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102185100B (zh) 2011-04-14 2013-05-22 清华大学 一种硅基几何巨磁电阻器件及其制备方法
CN102623630B (zh) * 2012-04-13 2013-10-16 清华大学 一种硅基异质pn结构几何巨磁阻器件及其制备方法
CN102709468A (zh) * 2012-06-28 2012-10-03 清华大学 一种砷化镓基几何巨磁电阻器件及其制备方法
CN103887429B (zh) * 2014-01-28 2016-08-17 清华大学 一种磁场可控的硅基非易失性阻变器件及制备方法
US9507005B2 (en) 2014-03-05 2016-11-29 Infineon Technologies Ag Device and current sensor for providing information indicating a safe operation of the device of the current sensor
CN104052464B (zh) * 2014-06-24 2017-04-05 清华大学 一种可重构的硅基磁逻辑单元
CN104297705B (zh) * 2014-09-29 2017-10-13 杭州电子科技大学 一种新型的集成单体芯片三轴磁敏传感器
CN104300964B (zh) * 2014-09-29 2018-01-30 杭州电子科技大学 一种新型硅基磁电信号耦合器件
CN105047814B (zh) * 2015-05-29 2017-06-30 清华大学 一种硅基低磁场巨磁阻磁传感器件及制备与性能测试方法
US10648756B2 (en) 2017-05-24 2020-05-12 Sig Sauer, Inc Suppressor assembly
US11255623B2 (en) 2019-04-30 2022-02-22 Sig Sauer, Inc. Suppressor with reduced gas back flow and integral flash hider
US11162753B2 (en) 2019-05-03 2021-11-02 Sig Sauer, Inc. Suppressor with integral flash hider and reduced gas back flow
US11280571B2 (en) 2019-12-23 2022-03-22 Sig Sauer, Inc. Integrated flash hider for small arms suppressors
CN111398879B (zh) * 2020-03-09 2021-06-18 兰州大学 一种基于p-n结光致磁阻传感器的新方法
US11686547B2 (en) 2020-08-12 2023-06-27 Sig Sauer, Inc. Suppressor with reduced gas back flow
US11859932B1 (en) 2022-06-28 2024-01-02 Sig Sauer, Inc. Machine gun suppressor
US12474136B2 (en) 2022-10-24 2025-11-18 Rough Rider Suppressors, LLC Firearm suppressor with progressive rotation baffle arrangement
USD1059531S1 (en) 2023-03-24 2025-01-28 Rough Rider Suppressors, LLC Firearm suppressor
USD1054521S1 (en) 2023-03-24 2024-12-17 Rough Rider Suppressors, LLC Firearm suppressor
USD1054520S1 (en) 2023-03-24 2024-12-17 Rough Rider Suppressors, LLC Firearm suppressor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102185100A (zh) * 2011-04-14 2011-09-14 清华大学 一种硅基几何巨磁电阻器件及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5373238A (en) * 1992-11-06 1994-12-13 International Business Machines Corporation Four layer magnetoresistance device and method for making a four layer magnetoresistance device
US5614727A (en) * 1995-06-06 1997-03-25 International Business Machines Corporation Thin film diode having large current capability with low turn-on voltages for integrated devices
JP2005109243A (ja) * 2003-09-30 2005-04-21 Tdk Corp 磁気抵抗効果素子及び磁気ヘッド
CN100389506C (zh) * 2006-01-06 2008-05-21 西北工业大学 锰氧化物异质薄膜及其制备方法
WO2008066118A1 (ja) * 2006-11-30 2008-06-05 Asahi Kasei Kabushiki Kaisha 薄膜積層体及びそれを用いた薄膜磁気センサ並びにその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102185100A (zh) * 2011-04-14 2011-09-14 清华大学 一种硅基几何巨磁电阻器件及其制备方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
SCHOONUS, J.J.H.M. ET AL.: "Extremely Large Magnetoresistance in Boron-Doped Silicon", PHYSICAL REVIEW LETTERS, vol. 100, no. 12, 28 March 2008 (2008-03-28), pages 127202 *
SCHOONUS, J.J.H.M. ET AL.: "Unravelling the mechanism of large room-temperature magnetoresistance in silicon", J. PHYS, D: APPL. PHYS., vol. 42, no. 18, 4 September 2009 (2009-09-04), pages 185011, XP020163360, DOI: doi:10.1088/0022-3727/42/18/185011 *
WAN, CAIHUA ET AL.: "Geometrical enhancement of low-field magnetoresistance in silicon", NATURE, vol. 477, no. 7364, 15 September 2011 (2011-09-15), pages 304 - 307 *

Also Published As

Publication number Publication date
US20140035076A1 (en) 2014-02-06
CN102185100A (zh) 2011-09-14
US9130142B2 (en) 2015-09-08
CN102185100B (zh) 2013-05-22

Similar Documents

Publication Publication Date Title
WO2012139494A1 (zh) 采用半导体基片的磁阻器件及其制备方法
US9484527B2 (en) Nanometer magnetic multilayer film for temperature sensor and manufacturing method therefor
KR100696960B1 (ko) 좁은 밴드갭을 갖는 이종 반도체에 있어서의 실온에서의이상 자기저항
Ziese et al. Step-edge magnetoresistance in La 0.7 Ca 0.3 MnO 3 films
Cheng et al. Anomalous Transport in Sketched Nanostructures at the LaAlO 3/SrTiO 3 Interface
Tsuge et al. Magnetic tunnel junctions with in situ naturally-oxidized tunnel barrier
CN103137850B (zh) 磁性多层膜霍尔元件及其制备方法
Zhao et al. Low‐Voltage Magnetoelectric Coupling in Fe0. 5Rh0. 5/0.68 PbMg1/3Nb2/3O3‐0.32 PbTiO3 Thin‐Film Heterostructures
US10209323B2 (en) Group III-V ferromagnetic/non-magnetic semiconductor heterojunctions and magnetodiodes
Sun et al. Interface stability in hybrid metal-oxide magnetic trilayer junctions
CN105845314B (zh) 具有大磁电阻效应的CoFeB/SiO2/n‑Si异质结构及制备方法
CN102520377B (zh) 增强型半导体-金属复合结构磁场传感器及其制备方法
CN102623630B (zh) 一种硅基异质pn结构几何巨磁阻器件及其制备方法
CN104900803B (zh) 一种非线性增强磁阻的磁传感器件及其制备方法
CN104851974B (zh) 一种具有整流磁电阻效应的磁传感器及其制备方法与应用
CN110865321A (zh) 一种具有磁闭环调制效应的磁传感材料堆层结构及其制备方法
CN118843381A (zh) 一种能耐受高温的高效自旋轨道矩结构设计和制备方法
KR100574729B1 (ko) 스핀 터널 트랜지스터 및 자기 재생 헤드
CN105206742B (zh) 一种室温可编程磁逻辑器件
CN102623629A (zh) 一种低功耗硅基巨磁阻器件及其制备方法
CN100412536C (zh) 无磁场测量稀磁半导体镓锰砷铁磁转变温度的方法
KR20160135057A (ko) 열전변환 소자 및 그 제조방법
CN102709468A (zh) 一种砷化镓基几何巨磁电阻器件及其制备方法
CN106486596A (zh) 室温p型磁性半导体p‑n‑p双重结器件和电控磁器件
CN121384248A (zh) 一种栅控超导纳米线低温温度计及其制备方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12771748

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 14111683

Country of ref document: US

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 20/02/2014)

122 Ep: pct application non-entry in european phase

Ref document number: 12771748

Country of ref document: EP

Kind code of ref document: A1