WO2012129820A1 - 晶圆传送装置以及晶圆传送方法 - Google Patents

晶圆传送装置以及晶圆传送方法 Download PDF

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Publication number
WO2012129820A1
WO2012129820A1 PCT/CN2011/072592 CN2011072592W WO2012129820A1 WO 2012129820 A1 WO2012129820 A1 WO 2012129820A1 CN 2011072592 W CN2011072592 W CN 2011072592W WO 2012129820 A1 WO2012129820 A1 WO 2012129820A1
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wafer
temperature
rapid thermal
thermal annealing
cooling
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French (fr)
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李春龙
李俊峰
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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Priority to US13/140,471 priority Critical patent/US8834155B2/en
Publication of WO2012129820A1 publication Critical patent/WO2012129820A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3314—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Definitions

  • Wafer transfer device and wafer transfer method Wafer transfer device and wafer transfer method
  • the present invention relates to the field of semiconductor fabrication, and in particular to a wafer transfer apparatus and a wafer transfer method.
  • Rapid thermal anneal is a common process step in semiconductor manufacturing.
  • the wafer is removed from the rapid thermal annealing equipment and transferred to other processing equipment, where the wafer has a higher temperature, for example 300 ° C, and the wafer in the wafer transfer device
  • the temperature of the carrier is only room temperature. Therefore, there is a huge temperature difference between the wafer and the wafer transfer device, which causes high thermal stress in the wafer, reduces the mechanical strength of the wafer, and sometimes causes the wafer to rupture. This problem has made the situation worse on large-size wafer production lines, such as the largest 12-inch wafers today and the future 16-inch wafers.
  • the invention provides a wafer transfer device and a wafer transfer method, which use a wafer transfer device with a heating component and a cooling component to transfer a wafer, which can reduce the temperature difference between the wafer and the transfer device, and reduce the wafer.
  • the internal thermal stress ensures the integrity of the wafer.
  • the present invention provides a wafer transfer apparatus for transferring a wafer taken out from a rapid thermal annealing apparatus, the wafer having a first temperature when taken out from a rapid thermal annealing apparatus, the wafer transfer apparatus including a crystal a load member for heating the wafer carrier member to the first temperature, and a cooling member for cooling the wafer carrier member to Room temperature.
  • the present invention also provides a wafer transfer method for transferring a wafer taken out from a rapid thermal annealing apparatus using a wafer transfer apparatus, the wafer having a first temperature when taken out from the rapid thermal annealing apparatus, the wafer
  • the conveying device includes a wafer carrying member, a heating member, and a cooling member, wherein Before the wafer, the heating component heats the wafer carrier component to the first temperature, and then the wafer taken out from the rapid thermal annealing device is directly placed on the wafer carrier component, and then, The cooling component cools the wafer carrier member and the wafer to room temperature.
  • the first temperature is not lower than 300 °C.
  • the cooling member cools the wafer carrying member and the wafer to room temperature at a rate of 20 ° C / sec.
  • the cooling member cools the wafer carrier member and the wafer to room temperature at a rate of not more than 40 ° C / sec.
  • An advantage of the present invention is that: a heating member and a cooling member are disposed in the wafer transfer device, and the heating member heats the wafer carrier member to the same temperature as the wafer just taken out from the rapid thermal annealing device, and then the cooling member is used The wafer carrier member and the wafer are cooled to room temperature together, thereby avoiding a large temperature difference between the wafer and the wafer transfer device, and no large thermal stress is generated inside the wafer during the transfer process, thereby avoiding the wafer. Breaking, ensuring the integrity of the wafer.
  • the present invention provides a wafer transfer apparatus for transferring a wafer taken out from a rapid thermal annealing apparatus, the wafer having a first temperature when taken out from the rapid thermal annealing apparatus, the first temperature being not less than 300 °C.
  • the wafer transfer device includes a wafer carrier member, a heating member, and a cooling member, wherein the wafer carrier member is configured to carry the removed wafer, and the heating member is configured to heat the wafer carrier member. It may be heated to the first temperature, and the cooling member is used to cool the wafer carrier member to room temperature, which may be cooled from a first temperature to a room temperature.
  • the present invention also provides a wafer transfer method for transferring a wafer taken out from a rapid thermal annealing device using a wafer transfer device.
  • Figure 1 shows the temperature-time curve for rapid thermal annealing and wafer transfer.
  • the wafer is placed in a rapid thermal annealing apparatus.
  • ⁇ -lOs is a temperature rising stage, and the rapid thermal annealing apparatus raises the temperature to about 1100 ° C for about 10 s to rapidly thermally anneal the wafer.
  • Processing Next, after the rapid thermal annealing process is completed, the wafer is transferred to a subsequent processing device, such as a FOUP (Front Open Unified Pod).
  • FOUP Front Open Unified Pod
  • the wafer has a first temperature when removed from the rapid thermal annealing apparatus, the first temperature being no less than 300 °C.
  • the wafer is directly placed on a wafer transfer device that is only room temperature, so there is a huge temperature difference between the wafer and the wafer transfer device, which makes the wafer short Dropping to room temperature in a few seconds, see the dotted line in Figure 1 and Figure 2, creates a large thermal stress inside the wafer, which reduces the mechanical strength of the wafer and can cause wafer cracking.
  • the wafer transfer device having the wafer carrier member, the heating member, and the cooling member is used to transfer the wafer.
  • the heating component of the wafer transfer device heats the wafer carrier member to a first temperature possessed by the wafer, and then the crystal is taken out from the rapid thermal annealing device.
  • the circle is placed directly on the wafer carrier, so there is no huge temperature difference between the wafer and the wafer carrier.
  • the wafer will not drop to room temperature in a short time, and the inside of the wafer will not be very large.
  • the thermal stress prevents the wafer from rupturing.
  • the cooling component of the wafer transfer device cools the wafer carrier and the wafer to room temperature; the cooling component can be cooled at a faster speed, for example, 20 ° C / sec, and the cooling time is about 15 s.
  • FIG 2 is a detailed schematic view of a cooling curve in which the cooling curve of the present invention is illustrated by thicker black lines.
  • This can reduce the cooling time and improve the efficiency of the process while avoiding thermal stress inside the wafer.
  • the cooling rate should not be too fast, such as should not exceed 40 ° C / sec.
  • the wafer carrier member can be heated to a higher temperature due to the presence of the heating member, thus allowing the wafer to be removed from the rapid thermal annealing device to be higher when the wafer is transferred.
  • the temperature of the wafer such as 400 ° C or 500 ° C, and the wafer bearing components with heating components are also sufficient to match the temperature of the wafer, which can increase the end temperature of the rapid thermal annealing process to increase the productivity of rapid thermal annealing equipment, and Does not cause problems with the thermal stress of the wafer.
  • a heating member and a cooling member are disposed in the wafer transfer device, and the heating member heats the wafer carrier member to the same temperature as the wafer just taken out from the rapid thermal annealing device, and then the wafer is cooled by the cooling member.
  • the carrier member and the wafer are cooled to room temperature together, thereby avoiding a large temperature difference between the wafer and the wafer transfer device, and no large thermal stress is generated inside the wafer during the transfer process, thereby avoiding wafer cracking. Ensure the integrity of the wafer.
  • the heating member since the presence of the heating member allows the wafer to be taken out to have a high temperature, it is possible to increase the end temperature of the rapid thermal annealing process to increase the productivity of the rapid thermal annealing apparatus.

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

晶圆传送装置以及晶圓传送方法
本申请要求于 2011 年 3 月 29 日提交中国专利局、 申请号为 201110077731.2、 发明名称为"晶圓传送装置以及晶圆传送方法"的中国专利申 请的优先权， 其全部内容通过引用结合在本申请中。
技术领域
本发明涉及一种半导体制造领域，特别地， 涉及一种晶圆传送装置以及晶 圆传送方法。
背景技术
快速热退火（ rapid thermal anneal, RTA )是半导体制造过程中的常见工艺 步骤。快速热退火结束时， 晶圆要被从快速热退火设备中取出并传送至其他处 理设备中， 此时晶圆具有较高的温度， 例如为 300°C , 而晶圆传送设备中的晶 圆承载台的温度仅为室温， 因此， 晶圆与晶圆传送设备之间存在巨大温差， 这 会在晶圆中产生很高的热应力， 降低晶圆的机械强度， 有时会引起晶圆破裂。 这一问题使情况在大尺寸晶圆生产线上变得更糟糕， 例如目前最大的 12英寸 晶圆以及未来的 16英寸晶圆。
因此， 需要开发出一种新的晶圆传送设备以及晶圆传送方法， 能够减小晶 圆与传送设备间的温差， 降低晶圆内部的热应力， 从而保证晶圆的完整。 发明内容
本发明提供了一种晶圆传送装置和晶圆传送方法，采用了具有加热部件以 及冷却部件的晶圆传送装置对晶圆进行传送，能够减小晶圆与传送设备间的温 差， 降低晶圆内部的热应力， 从而保证晶圆的完整。
本发明提供一种晶圆传送装置， 用于传送从快速热退火设备中取出的晶 圆， 所述晶圆在从快速热退火设备中取出时具有第一温度， 所述晶圆传送装置 包括晶圆 7 载部件、 加热部件以及冷却部件， 其中， 所述加热部件用以将所述 晶圆承载部件加热至所述第一温度，而所述冷却部件用以将所述晶圆承载部件 冷却至室温。
本发明还提供一种晶圆传送方法，采用晶圆传送装置传送从快速热退火设 备中取出的晶圆，所述晶圆在从快速热退火设备中取出时具有第一温度， 所述 晶圆传送装置包括晶圆承载部件、加热部件以及冷却部件， 其中， 在传送所述 晶圆之前， 所述加热部件将所述晶圆承载部件加热至所述第一温度， 然后将从 快速热退火设备中取出的所述晶圆直接置于所述晶圆承载部件上，接着， 所述 冷却部件将所述晶圆承载部件和所述晶圆冷却至室温。
在本发明的方法中， 所述第一温度不低于 300 °C。
在本发明的方法中，所述冷却部件将所述晶圆承载部件和所述晶圆冷却至 室温的速度为 20°C/秒。
在本发明的方法中，所述冷却部件将所述晶圆承载部件和所述晶圆冷却至 室温的速度不超过 40°C/秒。
本发明的优点在于： 在晶圆传送装置中设置加热部件和冷却部件，加热部 件将晶圆承载部件加热至与刚从快速热退火设备中取出的晶圆相同的温度，然 后再采用冷却部件将晶圆承载部件和晶圆一起冷却至室温，这样避免了晶圆和 晶圆传送装置之间存在巨大温差，在传送过程中不会在晶圆内部产生较大的热 应力， 从而避免了晶圆破裂， 保证晶圆的完整。
附图说明
图 1 快速热退火以及晶圆传输的温度 -时间曲线；
图 2 晶圆传输过程的温度 -时间曲线。
具体实施方式
以下参照附图并结合示意性的实施例来详细说明本发明技术方案的特征 及其技术效果。
本发明提供一种晶圆传送装置， 用于传送从快速热退火设备中取出的晶 圆， 所述晶圆在从快速热退火设备中取出时具有第一温度， 该第一温度不低于 300°C。 所述晶圆传送装置包括晶圆承载部件、 加热部件以及冷却部件， 其中， 所述晶圆承载部件用以承载取出的晶圆，而所述加热部件用以对所述晶圆承载 部件加热， 可将其加热至所述第一温度， 而所述冷却部件用以将所述晶圆承载 部件冷却至室温， 可将其从第一温度冷却至室温。
同时， 本发明还提供一种晶圆传送方法， 采用晶圆传送装置传送从快速 热退火设备中取出的晶圆。参见附图 1 , 附图 1显示了快速热退火以及晶圆传输 的温度 -时间曲线。 首先， 所述晶圆置于快速热退火设备中， 例如， Ο-lOs为升 温阶段， 快速热退火设备将温度升至约 1100°C , 并保持大约 10s, 对所述晶圆 进行快速热退火处理； 接着， 在完成快速热退火处理后， 将所述晶圆传送至随 后的处理设备中， 例如 FOUP ( Front open unified pod, 前端开口片盒）。 在完 成快速热退火处理后， 所述晶圆在从快速热退火设备中取出时具有第一温度， 该第一温度不低于 300°C。 在现有的传送方法中， 所述晶圆被直接置于仅为室 温的晶圆传送装置上， 因此所述晶圆与晶圆传送装置之间存在巨大温差， 这使 得所述晶圆在短短几秒的时间内降至室温， 参见附图 1和附图 2中的虚线部分， 在晶圆内部产生了很大的热应力，这降低了晶圆的机械强度，会引起晶圆破裂。 而在本发明中， 采用了具有晶圆承载部件、加热部件以及冷却部件的晶圆传送 装置对所述晶圆进行传送。 具体方法为， 在传送所述晶圆之前， 晶圆传送装置 的加热部件将晶圆承载部件加热至所述晶圆所具有的第一温度，然后将从快速 热退火设备中取出的所述晶圆直接置于晶圆承载部件上， 这样， 晶圆与晶圆承 载部件之间并不存在有巨大温差， 晶圆不会在短时间内急剧降至室温， 晶圆内 部也不会产生很大的热应力， 避免了晶圆的破裂。 接着， 晶圆传送装置的冷却 部件将晶圆^^载部件和晶圆一起冷却至室温；冷却部件可以以一个较快的速度 进行冷却， 例如为 20°C/秒， 冷却时间大约为 15s, 具体参见附图 2, 附图 2为冷 却曲线的细节示意图， 其中， 本发明的冷却曲线由较粗的黑色线条示出。 这样 可以在避免晶圆内部产生热应力的同时， 减少冷却时间， 提高流程的效率； 同 时， 为了尽量避免热应力的产生， 冷却速度也不应过快， 如不应超过 40°C/秒。 在另一方面， 由于加热部件的存在， 晶圆承载部件可以被加热至较高的温度， 这样一来，在对晶圆进行传送时， 允许从快速热退火设备中取出的晶圆具有较 高的温度，如 400°C或 500°C , 而具有加热部件的晶圆承载部件也足以与晶圆温 度相适应，这样可以提高快速热退火工艺的结束温度以增加快速热退火设备的 生产率， 而不会引起晶圆热应力的问题。
本发明中， 在晶圆传送装置中设置加热部件和冷却部件， 加热部件将晶 圆承载部件加热至与刚从快速热退火设备中取出的晶圆相同的温度，然后再采 用冷却部件将晶圆承载部件和晶圆一起冷却至室温，这样避免了晶圆和晶圆传 送装置之间存在巨大温差， 在传送过程中不会在晶圆内部产生较大的热应力， 从而避免了晶圆破裂， 保证晶圆的完整。 同时， 由于加热部件的存在， 允许取 出的晶圆具有很高的温度， 因此，提高快速热退火工艺的结束温度以增加快速 热退火设备的生产率成为可能。
尽管已参照上述示例性实施例说明本发明， 本领域技术人员可以知晓无 需脱离本发明范围而对本发明技术方案做出各种合适的改变和等价方式。 此 外，由所公开的教导可做出许多可能适于特定情形或材料的修改而不脱离本发 式而公开的特定实施例，而所公开的器件结构及其制造方法将包括落入本发明 范围内的所有实施例。

Claims

权 利 要 求
1.一种晶圆传送装置， 用于传送从快速热退火设备中取出的晶圆， 所述晶 圆在从快速热退火设备中取出时具有第一温度，所述晶圆传送装置包括晶圆承 载部件、 加热部件以及冷却部件， 其特征在于：
所述加热部件用以将所述晶圆 7 载部件加热至所述第一温度， 而所述冷 却部件用以将所述晶圆承载部件冷却至室温。
2.—种晶圆传送方法， 采用如权利要求 1所述的晶圆传送装置传送从快速 热退火设备中取出的晶圆，所述晶圆在从快速热退火设备中取出时具有第一温 度， 所述晶圆传送装置包括晶圆承载部件、 加热部件以及冷却部件， 其特征在 于：
在传送所述晶圆之前， 所述加热部件将所述晶圆承载部件加热至所述第 一温度，然后将从快速热退火设备中取出的所述晶圆直接置于所述晶圆承载部 件上， 接着， 所述冷却部件将所述晶圆承载部件和所述晶圆冷却至室温。
3.如权利要求 2所述的晶圆传送方法， 其特征在于， 所述第一温度不低于 300°C。
4.如权利要求 2所述的晶圆传送方法， 其特征在于， 所述冷却部件将所述 晶圆承载部件和所述晶圆冷却至室温的速度为 20°C/秒。
5.如权利要求 2所述的晶圆传送方法， 其特征在于， 所述冷却部件将所述 晶圆承载部件和所述晶圆冷却至室温的速度不超过 40 °C/秒。
PCT/CN2011/072592 2011-03-29 2011-04-11 晶圆传送装置以及晶圆传送方法 Ceased WO2012129820A1 (zh)

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CN111725101B (zh) * 2020-06-17 2023-11-14 北京北方华创微电子装备有限公司 冷却装置及冷却方法
CN113948430A (zh) * 2020-07-17 2022-01-18 中国科学院微电子研究所 一种晶圆传送机械臂

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