WO2012127957A1 - Dispositif et procédé de dépôt en phase vapeur - Google Patents

Dispositif et procédé de dépôt en phase vapeur Download PDF

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Publication number
WO2012127957A1
WO2012127957A1 PCT/JP2012/053940 JP2012053940W WO2012127957A1 WO 2012127957 A1 WO2012127957 A1 WO 2012127957A1 JP 2012053940 W JP2012053940 W JP 2012053940W WO 2012127957 A1 WO2012127957 A1 WO 2012127957A1
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WIPO (PCT)
Prior art keywords
vapor deposition
substrate
evaporation
mask
evaporation source
Prior art date
Application number
PCT/JP2012/053940
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English (en)
Japanese (ja)
Inventor
廣治 鳴海
博之 田村
松本　栄一
正浩 市原
永田　博彰
三之 田島
吉岡　正樹
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キヤノントッキ株式会社
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Publication of WO2012127957A1 publication Critical patent/WO2012127957A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

Definitions

  • the present invention relates to a vapor deposition apparatus and a vapor deposition method for forming a vapor deposition film having a film formation pattern using a vapor deposition mask on a substrate.
  • organic EL display devices using organic electroluminescence elements have attracted attention as display devices that replace CRTs and LCDs.
  • This organic EL display device has a structure in which an electrode layer and a plurality of organic light emitting layers are laminated on a substrate, and further a sealing layer is formed on the substrate. Corners and high contrast can be realized.
  • Such an organic EL device is generally manufactured by a vacuum vapor deposition method, in which a substrate and a vapor deposition mask are aligned and closely adhered in a vacuum chamber, and a vapor deposition film having a desired film formation pattern is formed on the substrate by the vapor deposition mask. Is formed.
  • the vapor deposition mask for obtaining a desired film formation pattern is enlarged with an increase in the size of the substrate.
  • tension was applied to the vapor deposition mask. Since it must be manufactured by welding and fixing to the mask frame in the state, it is not easy to manufacture a large evaporation mask, and if this tension is not sufficient, the mask will be distorted and the center of the mask will be distorted. The degree of adhesion of the substrate is reduced, and the mask frame becomes large in order to take these into consideration, and the increase in thickness and weight becomes remarkable.
  • the substrate and the vapor deposition mask are spaced apart from each other, and the organic light-emitting layer is formed with high accuracy by an opening that generates vapor particles having directivity from the evaporation source.
  • the evaporation source and the opening for generating directivity have an integrated structure, and the integrated structure is heated to a high temperature to generate evaporated particles from the opening. Therefore, radiation heat from the evaporation source is received by the vapor deposition mask, and it is impossible to prevent a decrease in position accuracy of the film formation pattern due to thermal expansion of the vapor deposition mask.
  • Evaporation film with a deposition pattern can be deposited using a deposition mask, and the structure can be simply and efficiently deposited by moving it in a separated state, and the limiting opening can be used as an evaporation source even in the separated state.
  • a mask holder with a scattering restriction part with an opening is provided with a vapor deposition mask.
  • An object of the present invention is to provide a vapor deposition apparatus and a vapor deposition method capable of performing high-accuracy vapor deposition while having a configuration in which the mask is relatively moved in a separated state.
  • a film forming material evaporated from the evaporation source 1 is deposited on the substrate 4 through the mask opening 3 of the vapor deposition mask 2, and a vapor deposition film having a film formation pattern defined by the vapor deposition mask 2 is formed on the substrate 4.
  • scattering of the evaporated particles of the film forming material evaporated from the evaporation source 1 is between the evaporation source 1 and the substrate 4 disposed in a state of being opposed to the evaporation source 1.
  • a mask holder 6 having a scattering restriction portion provided with a restriction opening portion 5 for restricting the direction is provided, and the substrate 4 and the vapor deposition mask 2 provided in a separated state are joined to the mask holder 6 and attached.
  • the substrate 4 is configured to be movable relative to the mask holder 6 provided with the vapor deposition mask 2 and the evaporation source 1 while maintaining a separated state from the vapor deposition mask 2. , Heating the deposition material
  • the particle generation unit 26 is provided with a horizontally long diffusion unit 27 in which the evaporated particles generated from the evaporation particle generation unit 26 diffuse and make the pressure uniform, and the horizontally long diffusion unit 27 is orthogonal to the relative movement direction of the substrate 4.
  • a plurality of the evaporation port portions 8 are arranged side by side in the lateral direction, and a part or all of the evaporation source 1 is formed of a material having a linear expansion coefficient smaller than that of stainless steel. is there.
  • the evaporation source 1 includes divided diffusion portions 27A that divide and form the horizontally long diffusion portions 27 in a horizontal direction orthogonal to the relative movement direction of the substrate 4, and between the divided diffusion portions 27A in the horizontal direction.
  • a configuration in which the horizontally long diffusion portion 27 is configured by providing a flexible pipe 30 that can be expanded and contracted, and a support portion 31 that is fixed to the divided diffusion portion 27A of the horizontally long diffusion portion 27 and a mounting portion 32 that is installed between the support portions 31 are provided. It concerns on the vapor deposition apparatus of Claim 1 characterized by the above-mentioned.
  • the evaporation source 1 includes a plurality of the divided diffusion portions 27A that constitute the horizontally long diffusion portion 27 arranged in the horizontal direction, and the divided diffusion portions 27A of the horizontally long diffusion portion 27 are connected by the flexible pipe 30.
  • the laterally long diffusion part 27 is configured, and the divided diffusion part 27A of the laterally long diffusion part 27 is fixed in a sandwiched state from the front and rear of the relative movement direction of the substrate 4 or in a erected state in the relative movement direction.
  • the support portions 31 for suppressing the thermal expansion movement of the central portion of the divided diffusion portion 27A are juxtaposed in a lateral direction perpendicular to the relative movement direction, and the installation portion 32 is installed between the lateral directions of the support portion 31.
  • the vapor deposition apparatus according to claim 3, wherein the vapor deposition apparatus is configured as described above.
  • a temperature control mechanism 9 is provided in at least one of the support part 31 or the erection part 32.
  • thermoinsulator 33 is inserted between at least one of the horizontally long diffusion portion 27 and the support portion 31 or between the support portion 31 and the installation portion 32. It concerns the device.
  • the vapor deposition apparatus according to claim 3, wherein the erection part 32 or both the erection part 32 and the support part 31 are made of a material having a smaller linear expansion coefficient than stainless steel.
  • the support portion 31 is formed of a material having a smaller linear expansion coefficient than that of the divided diffusion portion 27A of the laterally long diffusion portion 27, and in the lateral direction orthogonal to the relative movement direction of the substrate 4 of the divided diffusion portion 27A.
  • a plurality of the flexible pipes 30 that are fixed to the central portion and arranged in the lateral direction and connect the divided diffusion portions 27A are configured to be positioned between the support portions 31.
  • the erected part 32 is formed of a material having a smaller linear expansion coefficient than the divided diffusion part 27A of the laterally long diffusion part 27.
  • the erection part 32 or both of the support part 31 and the erection part 32 are formed of an invar material, according to the vapor deposition apparatus according to claim 7.
  • the vapor deposition apparatus according to claim 1, wherein one or a plurality of the evaporation sources 1 are arranged in a lateral direction orthogonal to the relative movement direction of the substrate 4.
  • a heat blocking part 19 for blocking the heat of the evaporation source 1 is arranged around at least one of the laterally long diffusion part 27 and the evaporation port part 8. It concerns the device.
  • the horizontally long diffusing portion 27 is provided with an introducing portion 28 in which the evaporated particles diffused by the horizontally long diffusing portion 27 are scattered with directivity when ejected from the evaporation port 8.
  • the plurality of evaporation port portions 8 are provided on the front end surface of the introduction portion 28 on the substrate 4 side, and the introduction length of the introduction portion 28 toward the substrate 4 side is defined as the relative movement direction of the substrate 4. 14.
  • the shadow SH which is a side edge inclined portion of the vapor deposition film.
  • G is the gap between the substrate 4 and the vapor deposition mask 2
  • ⁇ x is the lateral opening width of the evaporation port 8
  • TS is the distance between the evaporation port 8 and the vapor deposition mask 2.
  • the gap G is set large and the opening width ⁇ x of the evaporation port 8 is set small so that the shadow SH does not reach the interval PP between the adjacent deposited films. It concerns on the vapor deposition apparatus of Claim 1 characterized by the above-mentioned.
  • the deposition apparatus according to claim 1, wherein the film forming material is an organic material.
  • a vapor deposition film having a film formation pattern defined by the vapor deposition mask 2 is formed on the substrate 4 using the vapor deposition apparatus according to any one of claims 1 to 17. It concerns the method.
  • the deposition mask can be widely used by relatively moving the substrate in a separated state even if the deposition mask is smaller than the substrate.
  • Vapor deposition film can be deposited, and the structure can be simply and efficiently deposited by moving relative to each other in the separated state, and the limiting opening can be formed between the evaporation source and the vapor deposition mask even in the separated state.
  • the mask holder with the scattering restriction is provided with a vapor deposition mask.
  • This mask holder not only acts as a scattering restriction, but the radiation heat from the evaporation source enters the vapor deposition mask.
  • the evaporation mask is made of a material having a smaller linear expansion coefficient than stainless steel, so that the film formation pattern of the evaporation source due to the positional deviation of the evaporation source can be reduced.
  • a vapor deposition apparatus and a vapor deposition method capable of performing high-accuracy vapor deposition while being configured to move the substrate and the vapor deposition mask in a separated state relative to each other can be suppressed.
  • the organic light emitting layer can be deposited with high accuracy, and the damage of the substrate, the deposition mask, and the deposited film due to the mask contact can be prevented. It becomes the vapor deposition apparatus and vapor deposition method for organic EL device manufacture which can implement
  • the evaporation source is formed of a low thermal expansion material containing titanium and having a linear expansion coefficient of 8.5 ⁇ 10 ⁇ 6 / ° C. or less, so that the thermal expansion at the time of changing the film forming material is achieved. Can be further suppressed.
  • the divided diffusion portion constituting the horizontally long diffusion portion is fixedly supported by the support portion, and the support portion provided in parallel in the lateral direction perpendicular to the relative movement direction of the substrate is the installation portion.
  • the plurality of horizontally long diffusion portions arranged in parallel in the lateral direction orthogonal to the relative movement direction of the substrate are sandwiched from the front and rear of the relative movement direction of the substrate or the relative movement direction.
  • the support part is fixed in the installed state, and the support parts are fixed in the horizontal direction perpendicular to the relative movement direction of the board, and are arranged in parallel in the horizontal direction perpendicular to the relative movement direction of the board.
  • the temperature control mechanism in at least one of the support part or the erection part, it becomes possible to keep the temperature uniformly at a temperature lower than the temperature of the horizontally long diffusion part.
  • the amount of expansion is suppressed, and the amount of thermal expansion in the lateral direction orthogonal to the relative movement direction of the substrate is suppressed in the horizontally long diffusion portion and the installation portion supported by the support portion.
  • the heat of the horizontally long diffusion portion during heating of the evaporation source is provided by inserting a thermal insulator between at least one of the horizontally long diffusion portion and the support portion or between the support portion and the installation portion.
  • the amount of thermal expansion in the lateral direction perpendicular to the direction of relative movement of the substrate of the installation part is suppressed by suppressing the temperature rise of the installation part.
  • the thermal expansion of the erection part is suppressed, and the division is accordingly performed. Thermal expansion at the position supported by the support portion of the horizontally long diffusion portion is also suppressed.
  • the horizontally long diffused portion in which a plurality of divided diffused portions arranged in parallel in the lateral direction orthogonal to the relative movement direction of the substrates is connected by a flexible pipe, the substrate of each of the divided diffused portions is This bearing is supported by a bearing part made of a material having a smaller linear expansion coefficient than that of the laterally diffusing part at the center part in the transverse direction perpendicular to the relative movement direction, and arranged in parallel in the transverse direction perpendicular to the relative movement direction of the substrate.
  • an installation part made of a material having a smaller linear expansion coefficient than that of the horizontally long diffusion part is installed, and the divided diffusion parts of the horizontally long diffusion part are connected by a flexible pipe that can expand and contract in the transverse direction perpendicular to the relative movement direction.
  • the flexible pipe absorbs the thermal stress when the evaporation source is heated and expands and contracts, and a plurality of divided diffusion parts of the horizontally long diffusion part are arranged in parallel in the transverse direction perpendicular to the relative movement direction of the substrate.
  • Evaporation port It It is arranged to be deposited more accurate.
  • At least one of the support part or the erection part can be held at a low temperature by the temperature control mechanism, and the linear expansion coefficient is small near room temperature, but the linear expansion coefficient becomes high. Therefore, the laterally long diffusion portion supported by the support portion can further suppress the amount of thermal expansion in the lateral direction perpendicular to the relative movement direction of the substrate. .
  • the evaporation source for vapor deposition in the laterally long range orthogonal to the relative movement direction of the substrate may be constituted by one evaporation source that is long in the lateral direction, or more diffusion portion.
  • a plurality of evaporation sources having small diffusing portions may be arranged side by side in the lateral direction perpendicular to the relative movement direction of the substrate so that the pressure of the substrate is uniform.
  • a heat blocking part such as a cooling member (which functions as a temperature control unit provided in the evaporation source) for blocking radiation heat from the evaporation source is provided.
  • the opening width in the lateral direction perpendicular to the relative movement direction of the substrate at the evaporation port portion of the evaporation source is reduced by the gap between the substrate and the vapor deposition mask (the size of this gap).
  • the shadow of the film formation pattern (the amount of protrusion of the inclined portion on the side edge of the evaporation film) can be further suppressed, and the opening length of the evaporation port portion is relatively By elongating in the moving direction, the evaporation rate can be increased.
  • the directivity of the evaporated particles is enhanced, and the amount of the material used for forming the evaporated particles ejected from one evaporation port as compared with the evaporated particles having low directivity Are the same, the scattering angle of the evaporated particles within the effective range of film formation is reduced as a whole, and the incident angle at which the evaporated particles are incident on the vapor deposition mask opening is also reduced as a whole.
  • the amount of change in the film forming pattern position with respect to the gap variation can be reduced.
  • the heat blocking part can be arranged closer to the evaporation source side than the evaporation port part by arranging the introduction part to project from the horizontally long diffusion part toward the substrate side.
  • the opening width of the evaporation port portion for example, in the case of forming an RGB light emitting layer, it is a shadow that reaches an adjacent vapor deposition pattern (adjacent pixel).
  • the gap between the substrate and the vapor deposition mask can be increased by narrowing the opening width of the evaporation port portion in this way, and the vapor deposition mask itself can be provided with a temperature control mechanism. Vapor deposition equipment.
  • FIG. 1 is a schematic front view of a cross section of the main part of the present example (Example 1). It is a description perspective view of the evaporation source of a present Example (Example 1). It is explanatory explanatory drawing which shows another example of the evaporation source of a present Example (Example 1). It is an explanation perspective view of the evaporation source of the 2nd example (example 2). It is an explanatory top view which shows the case where the temperature control mechanism of the evaporation source of 2nd Example (Example 2) is provided.
  • the film-forming material evaporated from the evaporation source 1 passes through the restriction opening 5 of the mask holder 6 configured as a scattering restriction part, and onto the substrate 4 through the mask opening 3 of the vapor deposition mask 2. After deposition, a vapor deposition film having a film formation pattern defined by the vapor deposition mask 2 is formed on the substrate 4.
  • the substrate 4 and the vapor deposition mask 2 are arranged in a separated state, and the substrate 4 is configured to be movable relative to the vapor deposition mask 2 and the evaporation source 1 while maintaining the separated state.
  • the substrate 4 is configured to be movable relative to the vapor deposition mask 2 and the evaporation source 1 while maintaining the separated state.
  • a mask holder 6 having a scattering restriction portion provided with the restriction opening 5 for restricting the scattering direction of the evaporated particles of the film forming material evaporated from the evaporation source 1 between the vapor deposition mask 2 and the evaporation source 1.
  • the vapor deposition mask 2 is attached to the mask holder 6 constituting the scattering restriction portion, the incidence of heat from the evaporation source 1 is suppressed, and the temperature rise of the mask holder 6 and the vapor deposition mask 2 is suppressed, Further, even when the vapor deposition mask 2 is separated from the substrate 4, since the heat of the vapor deposition mask 2 is conducted to the mask holder 6 due to contact with the mask holder 6, the temperature at which the vapor deposition mask 2 is maintained at a constant temperature. Holding function is improved.
  • a temperature control mechanism for holding the temperature of the vapor deposition mask 2 is provided in at least one of the mask holder 6 or the vapor deposition mask 2 as necessary, the temperature rise of the mask holder 6 or the vapor deposition mask 2 is further suppressed.
  • the temperature holding function for holding the single-layer vapor deposition mask 2 at a constant temperature is improved.
  • the mask holder 6 having the scattering restriction portion also functions as a temperature holding function at the same time as the function of restricting the scattering direction of the evaporated particles, can suppress the temperature rise of the vapor deposition mask 2, and keep the vapor deposition mask 2 at a constant temperature. This also prevents distortion of the vapor deposition mask 2 due to heat.
  • the substrate 4 is moved relative to the vapor deposition mask 2, the mask holder 6 provided with the vapor deposition mask 2 and the evaporation source 1 while keeping the separated state from the vapor deposition mask 2 in this relative movement direction.
  • the vapor deposition film of the above-mentioned film formation pattern by the vapor deposition mask 2 is continued to form a vapor deposition film in a wide range even with the vapor deposition mask 2 smaller than the substrate 4, and the film formation pattern by incidence from the evaporation port 8 at the adjacent or remote position. Overlapping and distortion due to heat are sufficiently suppressed, and a vapor deposition apparatus capable of performing highly accurate vapor deposition is obtained.
  • the evaporation source 1 is made of a material having a linear expansion coefficient smaller than that of stainless steel, it is possible to suppress the positional deviation of the film formation pattern due to the positional deviation of the evaporation port portion of the evaporation source.
  • the vapor deposition apparatus and the vapor deposition method are capable of performing vapor deposition with high accuracy while being configured to move relative to each other in a separated state.
  • FIG. 1 is an overall view of the schematic apparatus.
  • a film forming material for example, an organic material for manufacturing an organic EL device
  • a vapor deposition chamber 7 vacuum chamber 7
  • a reduced pressure atmosphere is used as a mask for the vapor deposition mask 2.
  • the substrate 4 and the vapor deposition mask 2 are formed. Are separated from each other, and the substrate 4 is separated from the vapor deposition mask 2 with respect to the mask holder 6 and the evaporation source 1 configured as the vapor deposition mask 2 and the scattering restriction portion provided with the restriction opening 5.
  • the vapor deposition film of the film formation pattern defined by the vapor deposition mask 2 is formed on the substrate 4 in a range wider than the vapor deposition mask 2 by this relative movement. Yes.
  • a restriction opening 5 is provided between the vapor deposition mask 2 and the evaporation source 1 to limit the scattering direction of the evaporated particles of the film forming material evaporated from the evaporation ports 8 of the evaporation sources 1 arranged in parallel.
  • a mask holder 6 that constitutes a scattering restriction portion is provided, the vapor deposition mask 2 is stretched in contact with the end portion of the mask holder 6 on the substrate 4 side, and the vaporized particles having a large scattering angle ⁇ are restricted. The evaporation particles from the evaporation port 8 at a remote position are not allowed to pass.
  • vapor deposition can be performed on the substrate 4 having a large area, and from the evaporation ports 8 adjacent or separated by the restriction opening 5. Even if the vapor deposition mask 2 and the substrate 4 are separated from each other by preventing incidence, overlapping of the film formation patterns is prevented.
  • a plurality of evaporation sources 1 may be arranged side by side and the respective evaporation port portions 8 may be arranged in parallel.
  • the evaporation source 1 is composed of an evaporation particle generation unit 26 that heats the film forming material and a horizontally long diffusion unit 27 that diffuses the evaporation particles generated from the evaporation particle generation unit 26 to equalize the pressure,
  • a plurality of the evaporation port portions 8 are arranged in the laterally long diffusion portion 27 in the lateral direction.
  • the film-forming material is stored in the exchangeable particle generation unit 26 (crucible 26) by an automatic crucible exchange mechanism, and the vaporized particles heated and evaporated in the crucible 26 are temporarily stopped to equalize the pressure.
  • the horizontally long diffuser 27 is provided, and a plurality of slit-like openings that are long in the relative movement direction and narrow in the lateral direction are arranged in parallel along the lateral direction at the top of the horizontally long diffuser 27.
  • a plurality of the evaporation ports 8 are arranged side by side.
  • each of the evaporation ports 8 arranged in parallel in the horizontal direction is provided at the tip of the introduction portion 28 protruding from the horizontally long diffusion portion 27 of the evaporation source 1, and around the horizontal diffusion portion 27 or between the introduction portions 28.
  • a heat shut-off unit 19 that shuts off the heat of the evaporation source 1 is provided.
  • the heat blocking unit 19 may be anything that shields heat, but this embodiment employs a cooling plate, has a medium path for supplying a cooling medium, and the cooling medium takes away heat from the evaporation source 1. However, a heat exchanging part that exchanges this heat through the medium path is provided to enhance the heat shielding effect.
  • FIG. 2 is a perspective view of the evaporation source 1.
  • the evaporation source 1 is formed so as to protrude from the horizontally long diffusion portion 27 with the introduction portion 28 arranged side by side.
  • the evaporation port 8 is provided by forming a slit-like opening narrow in the lateral direction at the tip of each of the evaporation port forming projections 28.
  • the evaporated particles heated by the crucible 26 are diffused by the horizontally long diffusion part 27 and the pressure becomes uniform.
  • the ejection pressure at which the evaporated particles from the evaporation port 8 of each introduction section 28 are ejected is configured to be uniform.
  • the protruding length of the introducing portion 28 provided with the evaporation port portion 8 at the tip and protruding toward the substrate 4 is longer than the width of the introducing portion 28 in the lateral direction perpendicular to the relative movement direction of the substrate 4.
  • the directivity of the evaporation particles in the lateral direction orthogonal to the relative movement direction of the substrate 4 is enhanced, and at the same time, the evaporation port portion 8 is provided with a wide opening in the relative movement direction with respect to the substrate 4, thereby evaporating the evaporation rate. Therefore, the vapor deposition apparatus is configured to have a high productivity.
  • the introduction portion 28 may be arranged in the horizontally long diffusion portion 27.
  • the evaporation material adheres to the heat shield portion 19, so that the evaporation port portion It is desirable not to arrange the heat shield 19 between the eight.
  • the evaporation source 1 is made of a material having a linear expansion coefficient smaller than that of stainless steel, thereby suppressing the shift of the film formation pattern due to the position shift of the evaporation port 8.
  • the linear expansion coefficient should be taken into account when one kind of film-determined material is used.
  • the dimensions of the evaporation source 1 may be designed. However, when the film forming material is changed, the evaporation temperature of the material also changes, and the set temperature region of the evaporation source 1 expands accordingly. In order to suppress the change in the amount, it is desirable that the evaporation source 1 is made of a material having a small linear expansion coefficient.
  • the evaporation source 1 is formed of SUS304 (linear expansion coefficient: about 1.8 ⁇ 10 ⁇ 5 / ° C.), titanium having a small linear expansion coefficient (linear expansion coefficient: about 8.4 ⁇ 10 ⁇ 6 / ° C.) ) Were compared. If the length of the evaporation source 1 in the lateral direction orthogonal to the relative movement direction of the substrate 4 is 2500 mm and the temperature change at the time of changing the material is ⁇ 50 ° C., the amount of change in thermal expansion when the evaporation source 1 is formed of SUS304 is It is about 2.3 mm. However, the amount of change in thermal expansion when the evaporation source 1 is made of titanium can be suppressed to about 1.1 mm.
  • the evaporation source 1 is configured with a linear expansion coefficient containing titanium of 8.5 ⁇ 10 ⁇ 6 / ° C. or less, the amount of change in thermal expansion is 1 mm or more than that in which the evaporation source 1 is made of stainless steel. Can be suppressed.
  • the position deviation of the film formation pattern is suppressed by providing the support part 31, the erection part 32, and the flexible pipe 30.
  • FIG. 3 is a perspective view of the second embodiment in which the evaporating source 1 is provided with the support portion 31, the erection portion 32, and the flexible piping 30.
  • the evaporation source 1 is thermally expanded in the relative movement direction of the substrate 4 because the film formation pattern is not displaced and the film thickness of the vapor deposition film is slightly changed.
  • the film thickness uniform by adjusting the slit length with respect to the relative movement direction, if the evaporation port 8 thermally expands in the lateral direction perpendicular to the relative movement direction of the substrate 4, the film formation pattern is displaced.
  • the positional deviation of the evaporation port 8 due to the lateral thermal expansion must be suppressed.
  • the evaporation source 1 is heated, not only the whole is thermally expanded, but also unexpected thermal expansion such as twisting and distortion occurs.
  • the divided diffusion portions 27A of the horizontally long diffusion portions 27 arranged in a plurality of rows in the horizontal direction orthogonal to the relative movement direction of the substrate 4 are connected by a flexible pipe 30 that expands and contracts in the horizontal direction.
  • the center portion of each divided diffusion portion 27A is fixed by superposing it in a sandwiched state from the front and rear in the relative movement direction of the substrate 4 at the midpoint position of each divided diffusion portion 27A or by erection in this relative movement direction.
  • the fixed support is
  • the pair of support portions 31 are fixed to positions sandwiching the front and rear of the central portion (substantially midpoint position) of each divided diffusion portion 27A, and the central portion of each divided diffusion portion 27A is supported.
  • the installation part 32 between the support parts 31, the direction of thermal expansion is limited to the horizontal direction, and thus, the support parts 31 in the horizontal direction perpendicular to the relative movement direction of the substrate 4 are installed between the support parts 31.
  • the amount of thermal expansion of the portion fixed by the support portion 31 of each divided diffusion portion 27A arranged side by side in a direction orthogonal to the relative movement direction of the substrate 4 is the crucible of the evaporation source 1.
  • the divided diffusion parts 27A are connected by a flexible pipe 30 that can be expanded and contracted in a transverse direction perpendicular to the relative movement direction, and the flexible pipe 30 absorbs thermal stress during heating of the evaporation source 1 and expands and contracts. Even when the horizontally long diffusion portion 27 is divided in the lateral direction orthogonal to the relative movement direction of 4 and a plurality of the divided diffusion portions 27A are arranged in parallel, the plurality of evaporation port portions 8 provided in the divided diffusion portion 27A are not in the horizontal direction. It is possible to suppress displacement in the direction and to perform deposition with higher accuracy.
  • the amount of thermal expansion at the fixed position of the central portion of this divided diffusion portion 27A is constructed between the front portions and the rear portions of this support portion 31.
  • the amount of thermal expansion of the erection part 32 is reduced, and since this erection part 32 has a lower temperature than the crucible 26 and the divided diffusion part 27A of the evaporation source 1, the thermal expansion amount can be reduced. If the material is made of a material having a small linear expansion coefficient, the amount of thermal expansion can be further reduced, and this positional displacement can be further prevented and vapor deposition can be performed with high accuracy.
  • the support portion 31 may also be provided with the temperature control mechanism 9 at the same time.
  • the illustrated temperature control mechanism 9 has a configuration in which a medium path 9A for circulating a cooling medium is disposed so as to surround the erection unit 32 and the heat exchange unit 20A is provided.
  • the evaporation source 1 formed with SUS304 (linear expansion coefficient: about 1.8 ⁇ 10 ⁇ 5 / ° C.) is heated to 400 ° C., and the support portion 31 and the installation portion 32 are soaked to 100 ° C. by the temperature control mechanism 9.
  • the required length of the evaporation source 1 in the lateral direction orthogonal to the relative movement direction of the substrate 4 is 2500 mm, and it is composed of two 1230 mm divided diffusion sections 27A and 40 mm flexible piping 30.
  • the evaporation source 1 is heated to 400 ° C. at room temperature. If the evaporation source 1 is a single horizontally long diffuser 27, the expansion is about 16.9 mm.
  • the horizontally widened portion 27 is divided into two parts, and the center position of each divided diffuser 27A is exactly the same.
  • the amount of thermal expansion between the midpoint positions of each divided diffusion portion 27A is the amount of thermal expansion at 100 ° C.
  • the remaining portion is the amount of thermal expansion at the evaporation source temperature.
  • the amount of thermal expansion of each divided diffusion portion 27A is about 1.7 mm.
  • the thermal insulator 33 shown in FIG. 5 is an insertion member formed of a material having low thermal conductivity, and the support portion 31 is supported and fixed to each divided diffusion portion 27A via the thermal insulator 33. .
  • thermocontrol mechanism 9 is provided in both the erection part 32 or both the erection part 32 and the support part 31, a better vapor deposition apparatus is obtained.
  • the third embodiment is configured in the same manner as in the second embodiment, and the support portion 31 and the erection portion 32 are smaller in linear expansion coefficient than the laterally long diffusion portion 27 (divided diffusion portion 27A).
  • the film pattern is prevented from being displaced.
  • FIG. 7 is a perspective view in which the evaporating source 1 is provided with a support portion 31, a erection portion 32, and a flexible pipe 30 having a small linear expansion coefficient.
  • the evaporation source 1 has a support portion 31 having a linear expansion coefficient smaller than that of the horizontally long diffusion portion 27 fixed to each horizontally long diffusion portion 27 of the horizontally long diffusion portion 27, and is constructed with the same material as the support portion 31 between the support portions 31.
  • a plurality of divided diffusion portions 27A arranged side by side in the lateral direction orthogonal to the relative movement direction of the substrate 4 are supported and fixed by the support portions 31 from the front and rear in the relative movement direction of the substrate 4 as in the second embodiment.
  • the direction of thermal expansion is limited to the lateral direction, and the support portion 31 is made of a material having a smaller linear expansion coefficient than the divided diffusion portion 27A.
  • the amount of movement due to thermal expansion at the position fixedly supported on 31 is configured to be the amount of movement due to thermal expansion of the erection part 32.
  • the erection part 32 is also formed of a material having a smaller linear expansion coefficient than the divided diffusion part 27A, and the amount of movement due to this thermal expansion is taken as the thermal expansion amount of the erection part 32 having a smaller linear expansion coefficient.
  • the thermal expansion amount of each divided diffusion portion 27A is smaller when the horizontally long diffusion portion 27 shown in FIG. 8 is divided into four than when the horizontally long diffusion portion 27 shown in FIG. 7 is divided into two.
  • the evaporation source 1 is SUS304 (linear expansion coefficient: about 1.8 ⁇ 10 ⁇ 5 / ° C.), and the support portion 31 is Kovar (linear expansion coefficient: about 5.0 ⁇ 10 ⁇ 6 / ° C.). Form.
  • the thermal expansion changes The amount is different between the erection parts 32 having a small linear expansion coefficient and at both ends where the erection part 32 is not present, and the total thermal expansion change amount when the horizontally long diffusion part 27 is divided into two is about 3.5 mm.
  • the total amount of change in thermal expansion when divided into four is about 2.5 mm.
  • the optimum support position for reducing the fluctuation amount of the thermal expansion of the support portion 31 that supports the horizontally long diffusion portion 27 is the linear thermal expansion coefficient of the material forming the horizontally long diffusion portion 27, and the erection portion 32 is formed. It varies depending on the linear expansion coefficient of the material and the number of divisions of the horizontally long diffusion portion 27. For example, the larger the difference between the values of the linear thermal expansion coefficient of the material forming the horizontally long diffusion portion 27 and the linear expansion coefficient of the material forming the erection portion 32, the greater the position at the midpoint of the divided divided diffusion portion 27A. It is better to support.
  • the support portion 31 and the erection portion 32 are provided with the temperature control mechanism 9, it becomes possible to lower the temperature and further suppress the amount of thermal expansion, for example, the support portion 31 and the erection portion 32.
  • the temperature By setting the temperature to about 260 ° C. or less, an invar material having a small linear expansion coefficient can be used by the support part 31 and the erection part 32.
  • ⁇ X (P + 2SH) amount of displacement of the vapor deposition film in the horizontal direction
  • G a distance between the substrate and the vapor deposition mask
  • TS a distance between the evaporation port portion and the vapor deposition mask
  • ⁇ X ( ⁇ x) a displacement amount of the evaporation port portion in the horizontal direction
  • the gap G is 1 mm
  • TS is 100 mm
  • the evaporation port portion movement amount ⁇ X ( ⁇ x) in the horizontal direction of the evaporation port portion 8 is 1 mm
  • the substrate 4 and the vapor deposition mask 2 are arranged in a separated state and formed into a film, as shown in FIG. 10, shadows (SH) that are inclined portions at both end portions of the vapor deposition film are generated.
  • the gap between the substrate 4 and the vapor deposition mask 2 is G
  • the lateral opening width of the evaporation port 8 is ⁇ x
  • the distance between the evaporation port 8 and the vapor deposition mask 2 is TS
  • the gap G can be set large by setting the opening width ⁇ x of the evaporation port 8 small.
  • the gap G can be secured at 1 mm or more.
  • TS 100 mm and ⁇ x is 3 mm
  • G 1 mm
  • TS 100 mm and ⁇ x is reduced to 0.6 mm
  • G can be 5 mm
  • SH can be reduced to 0.01 mm, and a higher-definition film forming pattern may be supported.
  • the evaporation port 8 of the evaporation source 1 is formed in a slit shape that is long in the relative movement direction of the substrate 4 and narrow in the lateral direction perpendicular thereto, so that the substrate 4 and the evaporation mask 2 are vapor-deposited in a separated state.
  • the evaporation rate can be increased while suppressing the shadow SH.
  • the evaporation port 8 of the evaporation source 1 is formed in a slit shape that is long in the relative movement direction of the substrate 4 and narrow in the lateral direction perpendicular thereto, so that even when the substrate 4 and the mask are deposited in a separated state, The evaporation rate can be increased while suppressing the shadow SH.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention concerne un dispositif et un procédé de dépôt en phase vapeur qui, lorsque la taille des substrats augmente, permettent de ne pas utiliser un masque de dépôt en phase vapeur comparativement plus grand. Plus précisément, un mouvement relatif entre le substrat et le masque distants l'un de l'autre permet d'utiliser un masque de dépôt en phase vapeur plus petit que le substrat pour déposer un film selon un motif produit par ledit masque sur une zone plus grande. Ledit dispositif et ledit procédé de dépôt en phase vapeur empêchent également le chevauchement de motifs de film, minimisent la chaleur rayonnante incidente provenant de la source d'évaporation, et permettent un dépôt en phase vapeur rapide et précis. Un support de masque (6) qui comporte des parties de contrôle de la diffusion pourvues d'ouvertures de contrôle (5) est placé entre la source d'évaporation (1) et le substrat (4). Le masque de dépôt en phase vapeur (2) susmentionné est fixé audit support de masque (6). Tout en étant maintenu à une certaine distance dudit masque de dépôt en phase vapeur (2), le substrat (4) peut se déplacer librement par rapport à la source d'évaporation (1) et au support de masque (6) avec le masque de dépôt en phase vapeur (2) fixé à ce dernier. La source d'évaporation (1) est constituée d'un matériau qui présente un coefficient de dilatation linéaire inférieur à celui de l'acier inoxydable.
PCT/JP2012/053940 2011-03-18 2012-02-20 Dispositif et procédé de dépôt en phase vapeur WO2012127957A1 (fr)

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Cited By (2)

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CN105324511B (zh) * 2013-06-21 2017-09-05 夏普株式会社 有机电致发光元件的制造方法和有机电致发光显示装置
CN111041424A (zh) * 2018-10-15 2020-04-21 佳能特机株式会社 成膜装置及方法、有机el面板的制造系统以及制造方法

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JP5827965B2 (ja) * 2013-02-05 2015-12-02 シャープ株式会社 表示装置の製造方法

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JP2004353084A (ja) * 2003-05-08 2004-12-16 Sanyo Electric Co Ltd 蒸発装置の固定部材
JP2011047035A (ja) * 2009-08-25 2011-03-10 Samsung Mobile Display Co Ltd 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法
JP2011233521A (ja) * 2010-04-28 2011-11-17 Samsung Mobile Display Co Ltd 薄膜蒸着装置、これを利用した有機発光表示装置の製造方法及びこれを利用して製造された有機発光表示装置
WO2011145456A1 (fr) * 2010-05-18 2011-11-24 シャープ株式会社 Dispositif et procédé de fabrication pour élément el organique

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Publication number Priority date Publication date Assignee Title
JP2004353084A (ja) * 2003-05-08 2004-12-16 Sanyo Electric Co Ltd 蒸発装置の固定部材
JP2011047035A (ja) * 2009-08-25 2011-03-10 Samsung Mobile Display Co Ltd 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法
JP2011233521A (ja) * 2010-04-28 2011-11-17 Samsung Mobile Display Co Ltd 薄膜蒸着装置、これを利用した有機発光表示装置の製造方法及びこれを利用して製造された有機発光表示装置
WO2011145456A1 (fr) * 2010-05-18 2011-11-24 シャープ株式会社 Dispositif et procédé de fabrication pour élément el organique

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105324511B (zh) * 2013-06-21 2017-09-05 夏普株式会社 有机电致发光元件的制造方法和有机电致发光显示装置
CN111041424A (zh) * 2018-10-15 2020-04-21 佳能特机株式会社 成膜装置及方法、有机el面板的制造系统以及制造方法
CN111041424B (zh) * 2018-10-15 2023-05-05 佳能特机株式会社 成膜装置、制造系统、有机el面板的制造系统、成膜方法及有机el元件的制造方法

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TW201250026A (en) 2012-12-16
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