WO2012126427A2 - Laser comportant une cavité externe pouvant être accordée et procédé pour son utilisation - Google Patents

Laser comportant une cavité externe pouvant être accordée et procédé pour son utilisation Download PDF

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Publication number
WO2012126427A2
WO2012126427A2 PCT/CN2012/075816 CN2012075816W WO2012126427A2 WO 2012126427 A2 WO2012126427 A2 WO 2012126427A2 CN 2012075816 W CN2012075816 W CN 2012075816W WO 2012126427 A2 WO2012126427 A2 WO 2012126427A2
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WO
WIPO (PCT)
Prior art keywords
optical path
mirror
path difference
difference generating
wavelength
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Application number
PCT/CN2012/075816
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English (en)
Chinese (zh)
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WO2012126427A3 (fr
Inventor
陈波
高磊
张光勇
陈熙
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华为技术有限公司
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Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to PCT/CN2012/075816 priority Critical patent/WO2012126427A2/fr
Priority to CN201280000837.5A priority patent/CN102812602B/zh
Publication of WO2012126427A2 publication Critical patent/WO2012126427A2/fr
Publication of WO2012126427A3 publication Critical patent/WO2012126427A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon

Definitions

  • External cavity tunable laser and method of use thereof
  • the present invention relates to the field of optical technologies, and in particular, to an external cavity tunable laser and a method of using the same. Background technique
  • the external cavity tunable laser shown in Figure 1 comprises a gain chip, a collimating mirror, a wavelength selective element, and a mirror.
  • the external cavity tunable laser shown in Figure 1 can achieve single longitudinal mode lasing, mainly by using the overlapping of the transmission spectra of two wavelength tunable components to select a fine wavelength, that is, using a cursor (Vernier) effect.
  • the specific principle is as follows: After the beam emitted from the gain chip (12) is collimated and collimated by the collimating mirror (20), it passes through two tunable wavelength selecting elements (24) and (26), which are tunable The wavelength selective elements (24) and (26) filter the outgoing beam incident on the mirror (14), which is then reflected by the mirror (14) and folded back completely to the active area of the gain chip (12) according to the original incident path. Cavity resonance.
  • the transmission spectra of the tunable wavelength selective elements (24) and (26) are shown in the two free spectral regions (Free Spectral Range 1, 2, FSR1 and FSR2) of Figure 2, since the transmission peaks of FSR1 and FSR2 are only at ⁇ There is overlap at the wavelength, so that when ⁇ corresponds to the longitudinal mode of the external cavity laser, a single longitudinal mode lasing of wavelength ⁇ can be achieved.
  • the Vernier effect employed in the prior art is by adjusting the wavelength selection elements of the two FSRs.
  • the transmission spectrum is such that only one transmission peak coincides and the remaining transmission peaks are staggered to achieve a single longitudinal mode lasing corresponding to the coincident transmission peak.
  • Embodiments of the present invention provide an external cavity tunable laser, and a method of using the same, to make the wavelength tuning selection process faster and easier.
  • An external cavity tunable laser comprising:
  • Gain chip collimating mirror, wavelength selecting component, optical path difference generating optical path
  • a cavity surface of the gain chip is located at a focal plane of the collimating mirror; a wavelength selecting component is located between the collimating mirror and the optical path difference generating optical path; and the collimating mirror collimates the light beam emitted from the cavity surface of the gain chip to form a parallel And transmitting the light beam to the wavelength selective element; the wavelength selecting element filters the parallel light beam from the collimating mirror and sends the light beam to the optical path difference generating optical path;
  • the optical path difference generating optical path divides the parallel light beam of the incident optical path difference generating optical path into at least two branch light beams, and reflects the respective branch light beams in the incident direction to the gain chip, wherein the optical path difference generating optical path can be adjusted The optical path difference between the optical paths of the branch beams.
  • a method of using an external cavity tunable laser comprising:
  • the gain chip of the external cavity tunable laser After the gain chip of the external cavity tunable laser according to any one of the embodiments of the present invention is excited to generate a light beam, adjusting the optical path difference to generate an optical path difference between optical paths of the respective branch beams in the optical path, so that The external cavity tunable laser implements a wavelength tuning function.
  • the external cavity resonant optical path includes a gain chip, a collimating mirror, a wavelength selecting element, and an optical path difference generating optical path.
  • the wavelength selecting component can play the role of the primary filtering mode selection; the optical path difference generating optical path serves as the second filtering mode selection, and can further select the desired lasing from the mode selected by the initial filtering with a certain frequency interval. Mode, and suppress the remaining modes to achieve single longitudinal film lasing. Since the optical path difference generation circuit functions as a coarse selection mode, precise adjustment adjustment is not required, making the wavelength tuning selection process faster and easier.
  • FIG. 1 is a schematic structural view of a prior art external cavity tunable laser
  • FIG. 2 is a schematic diagram of a free spectral region adjusted with the external cavity tunable laser shown in FIG. 1;
  • FIG. 3 is a schematic structural view of an exceptional cavity tunable laser according to the present invention.
  • FIG. 4 is a schematic structural view of an exemplified cavity tunable laser according to the present invention.
  • 5 is a transmission spectrum formed by Etalon-1 filtering and an interference spectrum formed by two-beam interference according to an embodiment of the present invention
  • FIG. 6 is a mode gain spectrum diagram of a common filtering effect of an Etalon-1 and an optical path difference generating optical path according to an embodiment of the present invention
  • Figure 8 is a partial view of a transmission spectrum of an embodiment of the present invention.
  • FIG. 9 is a schematic structural view of an exemplified cavity tunable laser according to the present invention.
  • FIG. 10 is a schematic structural view of an exemplified cavity tunable laser according to the present invention.
  • FIG. 11 is a schematic flowchart of a method according to an embodiment of the present invention.
  • the present invention will be further described in detail with reference to the accompanying drawings, in which FIG. An embodiment. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.
  • An embodiment of the present invention provides an external cavity tunable laser, as shown in FIG. 3, including: a gain chip 100, a collimating mirror 200, a wavelength selecting component 300, and an optical path difference generating optical path 400; wherein the gain shown in FIG. Both ends of the chip 100 are the cavity surface 1001 and the cavity surface 1002; such marks are also used in the subsequent figures, and are not described again.
  • One cavity surface of the gain chip 100 is located at the focal plane of the collimating mirror 200; In the focal plane of the collimating mirror 200; the wavelength selecting component 300 is located between the collimating mirror 200 and the optical path difference generating optical path 400;
  • the collimating mirror 200 collimates the light beam emitted from the cavity surface of the gain chip 100 to form a parallel beam and transmits it to the wavelength selecting element 300.
  • the wavelength selecting element 300 filters the parallel beam from the collimating mirror 200 and transmits it to The optical path difference generating optical path 400; the wavelength selective element 300 shown in FIG. 3 is sent to the filtered parallel light beam 600 of the optical path difference generating optical path 400;
  • the optical path difference generating optical path 400 divides the parallel light beam of the incident optical path difference generating optical path 400 into at least two branched light beams, and reflects the respective branch light beams to the gain chip 100 in the incident direction, as shown in FIG.
  • the light beam 700 and the branch light beam 800, the optical path difference generating light path 400 can adjust the optical path difference between the optical paths of the respective branch light beams.
  • the external cavity resonant optical path includes a gain chip, a collimating mirror, a wavelength selecting element, and an optical path difference generating optical path.
  • the wavelength selecting component can play the role of the primary filtering mode selection; the optical path difference generating optical path functions as the second filtering mode selection, and can further select the desired excitation from the mode selected by the initial filtering and having a certain frequency interval. Shooting, and suppressing the remaining modes to achieve single longitudinal film lasing. Since the optical path difference generation circuit functions as a coarse selection mode, precise adjustment adjustment is not required, making the wavelength tuning selection process faster and easier.
  • the branch beam is a two-way structure, and the branch beam is two.
  • the principle of the above road is the same as that of the following embodiment. Therefore, the structure of the two-way branch beam in the following embodiments should not be construed as limiting the embodiment of the present invention.
  • the optical path difference generating optical path 400 includes: at least two mirrors 401 (two mirrors shown in FIG. 4: a mirror 401A and a mirror 401B), and at least one reflection
  • the position of the mirror 401 is adjustable; the position of the mirror 401 A can be adjusted, or the position of the mirror 401B can be adjusted, or the positions of the mirror 401A and the mirror 401B can be adjusted.
  • Each of the mirrors 401 is located in the propagation direction of the branch beam generated by the incident optical path difference generating optical path 400 and the reflecting surface of each of the mirrors 401 is perpendicular to the propagation direction of the branch beam; the position of the adjusting mirror 401 is adjustable. The position of at least one of the mirrors 401 changes the optical path difference between the optical paths of the respective branch beams incident on the respective mirrors 401 in the optical path difference generating optical path 400.
  • the position of the mirror 401A is adjustable, then the position of the mirror 401A is adjusted (for example, parallel movement in front and rear)
  • the mirror 401A changes the optical path of the branch beam of the mirror 401A such that the difference between the optical path of the branch beam of the mirror 401A and the optical path of the branch beam of the mirror 401B follows the position of the mirror 401A. The change has changed.
  • the mirror may be a common mirror or a full-reflecting mirror, and the embodiments of the present invention may be implemented and achieve corresponding effects. Since the total reflection mirror has a higher effect on the reflectance of light, it is preferable to use a total reflection mirror.
  • the working principle of the external cavity tunable laser is as follows: Wavelength selection element 300 The position of the mirror 401B is different such that there is an optical path difference between the optical paths of the respective branch beams. The corresponding reflected branch beam having an optical path difference is completely folded back along the original incident optical path, and after focusing by the collimating mirror 200, the combined wave is interfered and enters the inner cavity of the gain chip 100.
  • the equivalent cavity length (Lc) of the outer cavity is set to 1.2163 cm (cm), and the longitudinal mode formed by the outer cavity is about 0.0988 nm (nm).
  • Etalon-1 a Fabry Perot etalon Etalon
  • the transmission peak interval is 0.4 nm.
  • the transmission spectrum after Etalon-1 filtering is shown in Fig. 5.
  • the horizontal axis is the wavelength (wavelength), indicating the spectrum; the vertical axis is the normalized power, and the horizontal axis of the subsequent FIG. 6, FIG. 7a and FIG.
  • Figure 5 shows the interference spectrum formed by the transmission spectrum and double beam interference after Etalon-1 filtering. As can be seen from Fig. 5, because Etalon-1 has a small FSR and high filtering precision, it can be used for many existing The cavity longitudinal mode is initially selected such that only a few longitudinal modes exit at a transmittance close to one. At the same time, the broken line of Fig. 5 also shows the interference spectrum obtained by the interference of the two branches of the optical path difference. As shown in Fig.
  • m is the wavelength number.
  • d is reduced by 40 nm, at which time the transmission spectrum of Etalon-1 becomes the distribution shown in Fig. 8.
  • the optical path difference generating optical path 400 includes: a beam splitting mirror 402; at least two mirrors 403 (two mirrors shown in FIG. 9: a mirror 403 A and a mirror 403B) At least one of the mirrors 403 is adjustable in position; specifically, the position of the mirror 403A is adjustable, or the position of the mirror 403B is adjustable, and the positions of the mirror 403A and the mirror 403B are both adjustable.
  • the beam splitter 402 is located in the optical path of the parallel beam incident on the optical path difference generating optical path 400 for splitting the parallel beam of the incident beam splitter 402 into at least two branch beams;
  • the number of the mirrors 403 is the same as the number of the branches, the mirror 403 is located in the beam path of the beam, and the reflecting surface of each mirror 403 is perpendicular to the branch beam of the optical path; the adjusting mirror 403
  • the position of the at least one mirror 403, which is positionally adjustable, causes an optical path difference between the optical paths of the respective branch beams incident on each of the mirrors 403 in the optical path difference generating optical path 400 to be changed.
  • the position of the mirror 403A is adjustable, then adjusting the position of the mirror 403A changes the optical path of the branch beam of the mirror 403A, so that the optical path of the branch beam of the mirror 403A and the branch beam of the mirror 403B are The difference between the optical paths varies with the change in the position of the mirror 403A.
  • the working principle of the external cavity tunable laser is as follows:
  • the outgoing beam filtered by the wavelength selecting component 300 is incident on the beam splitting mirror 402 and is divided into two branches, one of which is reflected by the mirror 403 and is reflected. Fold back along the original incident path; the other branch is reflected by the mirror 403 and folded back along the original incident path.
  • the two branches will be led by the relative positions of the two mirrors 403.
  • the optical path difference is entered, and is folded back into the inner cavity of the gain chip 100 along the final interference.
  • At least one of the two mirrors 403 is positionally adjustable, by which the optical path difference of the branch beam is adjusted to finally change the spectral distribution of the interference multiplex, and wavelength tuning is achieved.
  • the surface of the beam splitter mirror 402 is optionally plated with an anti-reflection film.
  • the beam splitting surface of the beam splitter 402 has a transmittance and a reflectance of 50%, and the four light-passing surfaces are coated with an anti-reflection film.
  • the laser further includes: a focusing mirror 500, wherein the focusing mirror 500 is located between the wavelength selecting component 300 and the optical path difference generating optical path 400;
  • the wavelength selecting component 300 filters the parallel beam from the collimating mirror 200 and transmits it to the optical path difference generating optical path 400.
  • the wavelength selecting element 300 filters the parallel beam from the collimating mirror 200 and sends it to the focusing mirror 500.
  • the focusing mirror 500 narrows the spot of the parallel beam from the wavelength selecting unit 300, and transmits the parallel beam after the spot is reduced to the optical path difference.
  • An optical path 400 is generated.
  • the focusing mirror 500 and the collimating mirror 200 constitute a two-lens system, and the gain chip 100 and the two-lens system, and the mirror 403 (or the mirror 401) of each branch beam together constitute a retro-reflection structure. It is not sensitive to the lateral displacement variation of the gain chip, thereby improving the assembly tolerance of the device. Because the external cavity optical path is a two-lens system, wherein the focusing mirror and the collimating mirror form a double lens, the gain chip-double lens system-mirror forms a quasi-4f system, and is a back-reflecting structure, which is simulated and tested by practice. Insensitive to lateral displacement, it helps to improve the tolerance of actual device assembly.
  • the wavelength selecting component 300 is specifically: a Fabry Perot etalon.
  • the wavelength selecting component 300 is: a fixed wavelength selecting component having a fixed frequency interval, or a tunable wavelength selecting component.
  • the tunable wavelength selecting element is relative to the fixed wavelength selecting element, and the tunable wavelength selecting element is an element having a function of adjusting the wavelength of the transmitted light, and a plurality of tunable ways of realizing the selected wavelength are
  • the filtering of the incident spectrum can be achieved by reflection or diffraction or transmission, thereby realizing the selection of light of a desired wavelength from the incident light containing a plurality of wavelengths.
  • the tunable wavelength selective component can be an optic containing an Etalon, grating, etc., and the tunable meaning is by changing the device parameters of the tunable wavelength selection component, such as Etalon's mirror spacing, or temperature; For the grating, which is the angle between the incident light and the normal to the grating, by changing these parameters, the tunable wavelength selective component can be made.
  • the tunable wavelength selection component is: one of a thermal-modulated Fabry-Perot etalon, a liquid crystal voltage-tuned Fabry-Perot etalon, or a pitch-adjustable Fabry-Perot etalon kind.
  • the above laser further includes:
  • a microelectromechanical system or piezoelectric ceramic connected to a positionally adjustable mirror for driving and tuning the position of the positionally adjustable mirror.
  • the embodiment of the invention further provides a method for using an external cavity tunable laser, as shown in FIG. 11, comprising:
  • the gain chip of any of the above-mentioned external cavity tunable lasers provided by the embodiment of the present invention is excited to generate a light beam;
  • the position of the at least one mirror whose position is adjustable in the adjustment mirror is adjusted such that the optical path difference between the optical paths of the respective branch beams incident on the optical path in the optical path is changed.
  • the external cavity tunable laser comprises: a micro electromechanical system or a piezoelectric ceramic
  • the microelectromechanical system or piezoelectric ceramic is activated such that the microelectromechanical system or piezoelectric ceramic drives the positionally adjustable mirror in the mirror to tune the position of the positionally adjustable mirror.
  • the storage medium may be a read only memory, a magnetic disk or an optical disk or the like.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)

Abstract

La présente invention porte, selon des modes de réalisation, sur un laser comportant une cavité externe pouvant être accordée et sur un procédé pour son utilisation, dans lesquels le laser comportant une cavité externe pouvant être accordée comprend une puce de gain, un miroir de collimation, un élément de sélection de longueur d'onde, et un passage optique de génération de différence de trajectoire optique; une surface de cavité de la puce de gain étant située dans un plan focal du miroir de collimation; l'élément de sélection de longueur d'onde étant situé entre le miroir de collimation et le passage optique de génération de différence de trajectoire optique; des faisceaux de lumière émis à partir de la surface de cavité de la puce de gain étant collimatés par le miroir de collimation pour former des faisceaux parallèles qui sont envoyés à l'élément de sélection de longueur d'onde; l'élément de sélection de longueur d'onde filtrant les faisceaux parallèles provenant du miroir de collimation, puis les envoyant au passage optique de génération de différence de trajectoire optique; le passage optique de génération de différence de trajectoire optique divisant les faisceaux parallèles entrant dans le passage optique de génération de différence de trajectoire optique en au moins deux faisceaux ramifiés, et réfléchissant chacun des faisceaux ramifiés dans la direction d'incidence vis-à-vis de la puce de gain, le passage optique de génération de différence de trajectoire optique étant apte à ajuster la différence de trajectoire optique entre les trajectoires optiques des faisceaux ramifiés. Etant donné que le passage de génération de différence de trajectoire optique sert à sélectionner grossièrement un mode sans la nécessité d'une commande et d'un réglage précis, le processus d'accord et de sélection de longueur d'onde est facilité.
PCT/CN2012/075816 2012-05-21 2012-05-21 Laser comportant une cavité externe pouvant être accordée et procédé pour son utilisation WO2012126427A2 (fr)

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Application Number Priority Date Filing Date Title
PCT/CN2012/075816 WO2012126427A2 (fr) 2012-05-21 2012-05-21 Laser comportant une cavité externe pouvant être accordée et procédé pour son utilisation
CN201280000837.5A CN102812602B (zh) 2012-05-21 2012-05-21 一种外腔可调谐激光器，及其使用方法

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PCT/CN2012/075816 WO2012126427A2 (fr) 2012-05-21 2012-05-21 Laser comportant une cavité externe pouvant être accordée et procédé pour son utilisation

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WO2012126427A3 WO2012126427A3 (fr) 2013-04-18

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
US11394167B2 (en) 2018-09-10 2022-07-19 Innolight Technology (Suzhou) Ltd. Wavelength selection method and wavelength selection device for tunable laser

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105529613A (zh) * 2016-01-15 2016-04-27 北京工业大学 一种852nm超窄线宽外腔半导体激光器
CN110459956B (zh) * 2019-08-23 2021-03-02 中兴光电子技术有限公司 一种窄线宽可调谐激光器

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US20030063633A1 (en) * 2001-09-28 2003-04-03 Zhang Guangzhi Z. Tunable laser with suppression of spontaneous emission
CN1524326A (zh) * 2001-07-06 2004-08-25 ض� 可对激光波长与腔光路径长度进行不相关调谐的外腔激光器装置
US20060274808A1 (en) * 2005-06-01 2006-12-07 Pavilion Integration Corporation Method, apparatus and module using single laser diode for simultaneous pump of two gain media characteristic of polarization dependent absorption
CN202172209U (zh) * 2011-08-30 2012-03-21 华为技术有限公司 一种基于硅基液晶的外腔可调谐激光器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1524326A (zh) * 2001-07-06 2004-08-25 ض� 可对激光波长与腔光路径长度进行不相关调谐的外腔激光器装置
US20030063633A1 (en) * 2001-09-28 2003-04-03 Zhang Guangzhi Z. Tunable laser with suppression of spontaneous emission
US20060274808A1 (en) * 2005-06-01 2006-12-07 Pavilion Integration Corporation Method, apparatus and module using single laser diode for simultaneous pump of two gain media characteristic of polarization dependent absorption
CN202172209U (zh) * 2011-08-30 2012-03-21 华为技术有限公司 一种基于硅基液晶的外腔可调谐激光器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11394167B2 (en) 2018-09-10 2022-07-19 Innolight Technology (Suzhou) Ltd. Wavelength selection method and wavelength selection device for tunable laser
US11817671B2 (en) 2018-09-10 2023-11-14 Innolight Technology (Suzhou) Ltd. Wavelength selection method and wavelength selection device for tunable laser

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WO2012126427A3 (fr) 2013-04-18
CN102812602B (zh) 2014-06-04
CN102812602A (zh) 2012-12-05

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