WO2012117533A1 - Through-hole plating method and substrate manufactured using same - Google Patents

Through-hole plating method and substrate manufactured using same Download PDF

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Publication number
WO2012117533A1
WO2012117533A1 PCT/JP2011/054725 JP2011054725W WO2012117533A1 WO 2012117533 A1 WO2012117533 A1 WO 2012117533A1 JP 2011054725 W JP2011054725 W JP 2011054725W WO 2012117533 A1 WO2012117533 A1 WO 2012117533A1
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Prior art keywords
hole
plating
substrate
substrate intermediate
plated
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PCT/JP2011/054725
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French (fr)
Japanese (ja)
Inventor
典明 種子
陽一 齋藤
秀吉 瀧井
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株式会社メイコー
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Priority to PCT/JP2011/054725 priority Critical patent/WO2012117533A1/en
Priority to KR1020137022739A priority patent/KR101475474B1/en
Priority to CN2011800688393A priority patent/CN103403228A/en
Publication of WO2012117533A1 publication Critical patent/WO2012117533A1/en

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
    • H05K3/424—Plated through-holes or plated via connections characterised by electroplating method by direct electroplating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/425—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
    • H05K3/427—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern initial plating of through-holes in metal-clad substrates

Definitions

  • the present invention relates to a plating method applied in a through hole and a substrate manufactured using the same.
  • a through hole is provided to penetrate the substrate, and the inner surface is plated with copper or the like (hereinafter described as copper).
  • the continuity is achieved by holes.
  • This through hole is formed by making a hole in the double-sided copper-clad plate or multilayer shield plate with a drill or the like.
  • the plating treatment is performed on the copper foil layer exposed on the substrate surface including the inner surface of the through hole after removing smear after drilling. As the plating treatment, there are electrolytic plating and electroless plating.
  • a substrate in electrolytic plating, a substrate is immersed in a plating solution, power is supplied through a copper foil layer, and copper is electrodeposited on the both surfaces of the substrate and the inner surface of the through hole for surface treatment.
  • the substrate is immersed in a plating solution. That is, in both electrolytic plating and electroless plating, copper plating is performed on both surfaces of the substrate, and at the same time, copper plating is also applied in the through holes.
  • a copper layer of several ⁇ m to several tens of ⁇ m is generally formed on the inner surface of the through hole.
  • the present invention provides a through-hole plating method capable of plating only the inner surface of a through-hole in a simple, quick and inexpensive manner and a substrate manufactured using the same.
  • a substrate intermediate having a through hole penetrating an insulating layer and two conductive masks having an opening penetrating at a position corresponding to the through hole are used, and the position of the opening is passed through the through hole.
  • Forming and immersing the object to be plated in a plating solution depositing a metal on the entire surface of the object to be plated including the inner surface of the through hole, and performing plating treatment from the substrate intermediate to the conductive mask.
  • a through-hole plating method is provided, which is characterized by removing the metal.
  • a conductor pattern is formed on at least one side of the insulating layer before covering the substrate intermediate with the conductive mask.
  • the conductive mask is brought into close contact with both the front and back surfaces of the substrate intermediate.
  • this invention is a board
  • both surfaces of the substrate intermediate are covered with the conductive mask, it is possible to prevent the metal from adhering to both surfaces of the substrate intermediate in the plating process. Therefore, the handleability in the subsequent process is improved, and the workability is improved when a pattern is formed on the substrate intermediate, for example.
  • the conductive mask is provided with an opening at a position corresponding to the through hole, the inner surface of the through hole is exposed in the plating solution. For this reason, it is possible to efficiently perform the plating process only in the through hole, and it is possible to control the plating thickness only in the through hole.
  • a conductor pattern can be formed on at least one side of the insulating layer before plating metal is applied to the through hole. For this reason, it is possible to efficiently perform the plating process only on the inside of the through hole without plating metal adhering to the conductor pattern even on the substrate intermediate on which the conductor pattern is formed in advance.
  • the conductive mask is in close contact with both the front and back surfaces of the substrate intermediate, it is possible to reliably prevent the metal from adhering to both the front and back surfaces of the substrate intermediate during the plating process.
  • the plated metal covers the front and back surfaces of the substrate intermediate with an insulating layer with a conductive mask, and adheres only to the inside of the through hole by plating with the inner surface of the through hole exposed. For example, when a pattern is formed on the substrate intermediate, the workability is improved.
  • the plating methods include electrolytic plating and electroless plating.
  • electrolytic plating a case where electrolytic plating is used will be described.
  • the present invention can also be realized using electroless plating.
  • the object to be plated 2 is immersed in the electrolytic cell 1.
  • the electrolytic cell 1 is filled with the plating solution 3.
  • the plating solution 3 contains metal ions such as copper ions.
  • the object to be plated 2 is composed of a substrate intermediate 4 and a conductive mask 5.
  • the substrate intermediate 4 has a plate-like insulating layer 6, and one or a plurality of (three in the drawing) through holes 7 are formed in the insulating layer 6.
  • Conductive patterns 8 are formed on both surfaces of the insulating layer 6.
  • the conductive mask 5 is provided with a plurality of openings 9 penetrating, and at least the openings 9 are provided in corresponding positions with respect to the through holes 7 formed in the insulating layer 6.
  • the substrate intermediate body 4 is covered with the conductive mask 5 sandwiching both front and back surfaces, and is in close contact with at least a part of the conductive mask 5.
  • the conductive pattern 5 is in close contact with the surface of the conductive pattern 8, but when the conductive pattern 8 is not formed, the conductive mask 5 is the insulating layer 6 (more specifically, a copper foil applied to the surface of the insulating layer 6). Adheres closely to the surface.
  • the conductive mask 5 is in close contact with the land.
  • the conductive mask 5 is at least in close contact with the position protruding to the outermost side of the substrate intermediate 4.
  • the conductive mask 5 may be a metal, or may be a resin in which a metal is stretched on one side or both sides.
  • the conductive mask 5 may be plate-shaped or film-shaped such as copper foil. In the case of a resin, there is no particular limitation as long as the resin is not attacked by the plating solution 3.
  • the object to be plated 2 formed in this way is immersed in the plating solution 3 of the electrolytic cell 1 as described above, and is energized from the power source 10 using the conductive mask 5 as an electrode.
  • further electrodes 11 are provided on both side walls of the electrolytic cell 1.
  • the plating metal 12 in the plating solution adheres to the entire surface of the object to be plated 2 as a metal film. That is, the plating metal 12 adheres to the exposed surface of the conductive mask 5 and the inner surface of the through hole 7.
  • the substrate 2 to be plated is taken out of the plating solution 3 and the conductive mask 5 is removed to obtain the substrate 13 in which only the inner surface of the through hole 7 is plated as shown in FIG. Can do.
  • both surfaces of the substrate intermediate 4 are covered with the conductive mask 5, it is possible to prevent the metal from adhering to both the front and back surfaces of the substrate intermediate 4 during the plating process. Therefore, the handleability in the post process is improved, and for example, when the pattern is formed on the substrate intermediate 4 in the post process, the workability is improved.
  • the opening part 9 is provided in the position corresponding to the through hole 7 in the conductive mask 5, the inner surface of the through hole 7 is exposed in the plating solution. For this reason, the plating process can be efficiently performed in the through hole 7, and the plating thickness in the through hole 7 can be controlled. This is very convenient especially when it is desired to form a plating thickness of 100 ⁇ m.
  • the conductive mask 5 serves as an electrode to prevent plating metal from adhering to the front and back surfaces of the substrate intermediate 4 and at the same time serves as an electrode to perform a power feeding operation. For this reason, it is possible to perform the plating process in the through hole simply and inexpensively with only the conductive mask 5. Further, as shown in the figure, when the conductor pattern 8 is provided in advance, it is preferable because the plating pattern 12 can be efficiently applied to the conductor pattern 8 without attaching the plating metal 12 to the conductor pattern 8. . On the other hand, when the conductive pattern 8 is not formed, the conductive mask 5 adheres over the entire surface of the insulating layer 7, so that the plating metal 12 adheres to both the front and back surfaces of the substrate intermediate 4 during the plating process. Can be surely prevented.
  • Electrolysis tank 1
  • To-be-plated body 3
  • Plating solution 4
  • Conductive mask 6
  • Insulating layer 7
  • Through-hole 8
  • Conductive pattern Opening 10
  • Power supply 11
  • Electrode 12 Plating metal 13

Abstract

Using a substrate intermediate (4) having through-holes (7) passing through an insulating layer (6) and two electroconductive masks (5) having openings at positions corresponding to the through-holes (7), the entirety of front and rear surfaces of the substrate intermediate (4) is covered by the electroconductive masks (5) such that the positions of the openings are in alignment with the through-holes (7), and the electroconductive masks (5) are caused to adhere tightly to at least some of the front and rear surfaces of the substrate intermediate (4) so that an article to be plated (2) is formed. The article to be plated (2) is dipped in a plating liquid (3), a metal is deposited on the entire front surface of the plated article (2) including inner surfaces of the through-holes (7) so that a plating treatment is performed, and the electroconductive masks (5) are removed from the substrate intermediate (4).

Description

貫通穴めっき方法及びこれを用いて製造された基板Through-hole plating method and substrate manufactured using the same
　本発明は、貫通穴内に施すめっき方法及びこれを用いて製造された基板に関する。 The present invention relates to a plating method applied in a through hole and a substrate manufactured using the same.
　基板の両面に形成された回路同士の接続、あるいは多層基板における層間接続を行う際、当該基板を貫通する孔を設け、この内表面を銅等（以下は銅で説明する）でめっき処理したスルーホールによりその導通を図っている。この貫通穴は、両面銅張板又は多層シールド板に対し、ドリル等で孔をあけることにより形成される。めっき処理は、ドリル加工後のスミアを除去した後に、貫通穴内表面を含んだ基板表面に露出している銅箔層に対して行われる。めっき処理としては、電解めっき、無電解めっきがある。例えば電解めっきでは、基板をめっき液に浸漬し、銅箔層を介して給電し、基板両面及び貫通穴内表面に銅を電着して表面処理する。なお、無電解めっきにおいても基板はめっき液に浸漬される。すなわち、電解めっき、無電解めっきの何れにおいても、基板両面に銅めっきが施されると同時に貫通穴の中にも銅めっきが施される。このような電解めっきにより、一般的には、数μｍ～数十μｍの銅層が貫通穴の内表面に形成される。 When connecting between circuits formed on both sides of a substrate or interlayer connection in a multilayer substrate, a through hole is provided to penetrate the substrate, and the inner surface is plated with copper or the like (hereinafter described as copper). The continuity is achieved by holes. This through hole is formed by making a hole in the double-sided copper-clad plate or multilayer shield plate with a drill or the like. The plating treatment is performed on the copper foil layer exposed on the substrate surface including the inner surface of the through hole after removing smear after drilling. As the plating treatment, there are electrolytic plating and electroless plating. For example, in electrolytic plating, a substrate is immersed in a plating solution, power is supplied through a copper foil layer, and copper is electrodeposited on the both surfaces of the substrate and the inner surface of the through hole for surface treatment. Even in electroless plating, the substrate is immersed in a plating solution. That is, in both electrolytic plating and electroless plating, copper plating is performed on both surfaces of the substrate, and at the same time, copper plating is also applied in the through holes. By such electrolytic plating, a copper layer of several μm to several tens of μm is generally formed on the inner surface of the through hole.
　しかしながら、上記のようなめっき処理は、上述したように、スルーホールの内表面の他、基板両面にも銅めっきが施されてしまう。この後の工程において、回路形成する際にサブトラクティブ法を用いて基板の回路形成面に対して回路形成を行う場合、回路形成面の銅厚が厚くなるほど細線を形成しにくくなるため、細線形成の歩留まりが低下してしまう。回路形成面に形成された銅めっきが厚くなるほど、パターンの細線成形が困難になる。 However, as described above, in the plating process as described above, copper plating is also applied to both surfaces of the substrate in addition to the inner surface of the through hole. In the subsequent process, when forming a circuit on the circuit formation surface of the substrate using the subtractive method when forming the circuit, the thin line formation becomes difficult as the copper thickness of the circuit formation surface increases. The yield will be reduced. The thicker the copper plating formed on the circuit forming surface, the more difficult it is to form a pattern.
　このような問題点を解決するため、ドライフィルム等の絶縁性保護膜を基板両面に設けて、基板両面にめっき層を形成しない基板の製造方法が開示されている（例えば特許文献１参照）。しかしながら、特許文献１の製造方法においては、工程が煩雑である。例えば、最終的に、ドライフィルムを剥離する工程が必要となる。 In order to solve such a problem, a method of manufacturing a substrate in which an insulating protective film such as a dry film is provided on both surfaces of the substrate and no plating layer is formed on both surfaces of the substrate is disclosed (for example, see Patent Document 1). However, in the manufacturing method of patent document 1, a process is complicated. For example, finally, a step of peeling the dry film is required.
特開２００３－１８３８７６号公報JP 2003-183876 A
　本発明は、簡易かつ迅速で安価に貫通穴内表面のみにめっき処理を施すことができる貫通穴めっき方法及びこれを用いて製造された基板を提供する。 The present invention provides a through-hole plating method capable of plating only the inner surface of a through-hole in a simple, quick and inexpensive manner and a substrate manufactured using the same.
　本発明では、絶縁層を貫通した貫通穴を有する基板中間体と、前記貫通穴に対応した位置に貫通した開口部を有する２枚の導電性マスクとを用い、前記開口部の位置を前記貫通穴に合わせて前記基板中間体の表裏両面の全域を前記各導電性マスクで覆い、前記基板中間体の表裏両面の少なくとも一部に、それぞれの前記導電性マスクを密着させて被めっき処理体を形成し、該被めっき処理体をめっき液に浸漬し、前記貫通穴の内面を含んだ前記被めっき処理体の表面全体に金属を付着させてめっき処理し、前記基板中間体から前記導電性マスクを除去することを特徴とする貫通穴めっき方法を提供する。 In the present invention, a substrate intermediate having a through hole penetrating an insulating layer and two conductive masks having an opening penetrating at a position corresponding to the through hole are used, and the position of the opening is passed through the through hole. Cover the entire area of the front and back surfaces of the substrate intermediate with the respective conductive masks in accordance with the holes, and attach the respective conductive masks to at least a part of both the front and rear surfaces of the substrate intermediate to form the object to be plated. Forming and immersing the object to be plated in a plating solution, depositing a metal on the entire surface of the object to be plated including the inner surface of the through hole, and performing plating treatment from the substrate intermediate to the conductive mask. A through-hole plating method is provided, which is characterized by removing the metal.
　好ましくは、前記基板中間体を前記導電性マスクで覆う前に、前記絶縁層の少なくとも片面に導体パターンを形成する。
　好ましくは、前記導電性マスクを前記基板中間体の表裏両面の全面にわたって密着させる。 Preferably, a conductor pattern is formed on at least one side of the insulating layer before covering the substrate intermediate with the conductive mask.
Preferably, the conductive mask is brought into close contact with both the front and back surfaces of the substrate intermediate.
　さらに、本発明では、上述した貫通穴めっき方法を用いて製造された基板であって、前記絶縁層と、前記貫通穴と、前記貫通穴内に施されためっき金属とを有することを特徴とする基板を提供する。 Furthermore, in this invention, it is a board | substrate manufactured using the through-hole plating method mentioned above, Comprising: It has the said insulating layer, the said through-hole, and the plating metal given in the said through-hole. Providing a substrate.
　本発明によれば、基板中間体の両面が導電性マスクで覆われるため、めっき処理で基板中間体の両面に金属が付着することを防止できる。したがって、後工程における取扱い性が向上し、例えば基板中間体にパターンを形成する際にはその作業性が向上する。また、導電性マスクには貫通穴に対応した位置に開口部が設けられているため、めっき液内では貫通穴内面が露出する。このため、貫通穴内のみに効率よくめっき処理を施すことができ、貫通穴内のみのめっき厚を制御することが可能となる。 According to the present invention, since both surfaces of the substrate intermediate are covered with the conductive mask, it is possible to prevent the metal from adhering to both surfaces of the substrate intermediate in the plating process. Therefore, the handleability in the subsequent process is improved, and the workability is improved when a pattern is formed on the substrate intermediate, for example. Further, since the conductive mask is provided with an opening at a position corresponding to the through hole, the inner surface of the through hole is exposed in the plating solution. For this reason, it is possible to efficiently perform the plating process only in the through hole, and it is possible to control the plating thickness only in the through hole.
　また、貫通穴にめっき金属を施す前に、絶縁層の少なくとも片面に導体パターンを形成することができる。このため、予め導体パターンが形成された基板中間体に対しても、導体パターンにめっき金属が付着することなく、貫通穴内のみに効率よくめっき処理を施すことができる。
　また、導電性マスクは基板中間体の表裏両面の全面にわたって密着しているので、めっき処理中に基板中間体の表裏両面に金属が付着することを確実に防止できる。 In addition, a conductor pattern can be formed on at least one side of the insulating layer before plating metal is applied to the through hole. For this reason, it is possible to efficiently perform the plating process only on the inside of the through hole without plating metal adhering to the conductor pattern even on the substrate intermediate on which the conductor pattern is formed in advance.
In addition, since the conductive mask is in close contact with both the front and back surfaces of the substrate intermediate, it is possible to reliably prevent the metal from adhering to both the front and back surfaces of the substrate intermediate during the plating process.
　また、めっき金属は、絶縁層を有する基板中間体の表裏両面を導電性マスクで覆い、かつ貫通穴内表面は露出した状態でめっき処理されることにより貫通穴内のみに付着するので、後工程における取扱い性が向上し、例えば基板中間体にパターンを形成する際にはその作業性が向上することになる。 In addition, the plated metal covers the front and back surfaces of the substrate intermediate with an insulating layer with a conductive mask, and adheres only to the inside of the through hole by plating with the inner surface of the through hole exposed. For example, when a pattern is formed on the substrate intermediate, the workability is improved.
本発明に係る貫通穴めっき方法を順番に示す概略図である。It is the schematic which shows the through-hole plating method which concerns on this invention in order. 本発明に係る貫通穴めっき方法を順番に示す概略図である。It is the schematic which shows the through-hole plating method which concerns on this invention in order. 本発明に係る貫通穴めっき方法を用いて製造された基板の概略図である。It is the schematic of the board | substrate manufactured using the through-hole plating method which concerns on this invention.
　以下、図面を参照して本発明に係る方法及び基板を説明する。なお、めっき方法には電解めっきと無電解めっきがあるが、以下では電解めっきを用いた場合について説明する。しかしながら本発明は、無電解めっきを用いても実現可能である。 Hereinafter, a method and a substrate according to the present invention will be described with reference to the drawings. The plating methods include electrolytic plating and electroless plating. Hereinafter, a case where electrolytic plating is used will be described. However, the present invention can also be realized using electroless plating.
　図１に示すように、電解槽１内に、被めっき処理体２を浸漬する。電解槽１はめっき液３で満たされている。めっき液３には、例えば銅イオン等の金属イオンが含まれている。被めっき処理体２は基板中間体４と導電性マスク５とからなる。基板中間体４は、板状の絶縁層６を有し、この絶縁層６には１又は複数（図では３個）の貫通穴７が形成されている。絶縁層６の両面には、導体パターン８が形成されている。導電性マスク５には、複数の開口部９が貫通して設けられていて、少なくともこの開口部９は絶縁層６に形成された貫通穴７については全て対応した位置に設けられている。したがって、導電性マスク５で基板中間体４の片面側を覆った際に、開口部９と貫通穴７との位置は揃う。基板中間体４は、その表裏両面を導電性マスク５で挟むようにして覆われ、導電性マスク５の少なくとも一部と密着される。図１では、導体パターン８の表面と密着させているが、導体パターン８が形成されていない場合は導電性マスク５は絶縁層６（より詳しくは絶縁層６の表面に施された銅箔）の表面と密着する。あるいは、絶縁層６にランドが形成されている場合は、導電性マスク５はランドに密着する。要は、導電性マスク５は基板中間体４の最も外側に突出した位置に対して少なくとも密着する。なお、導電性マスク５は、金属であってもよいし、片面あるいは両面に金属が張られた樹脂であってもよい。また、導電性マスク５は板状でもよいし、銅箔等のフィルム状でもよく、樹脂の場合は当該樹脂がめっき液３に侵されなければ特に制約はない。 As shown in FIG. 1, the object to be plated 2 is immersed in the electrolytic cell 1. The electrolytic cell 1 is filled with the plating solution 3. The plating solution 3 contains metal ions such as copper ions. The object to be plated 2 is composed of a substrate intermediate 4 and a conductive mask 5. The substrate intermediate 4 has a plate-like insulating layer 6, and one or a plurality of (three in the drawing) through holes 7 are formed in the insulating layer 6. Conductive patterns 8 are formed on both surfaces of the insulating layer 6. The conductive mask 5 is provided with a plurality of openings 9 penetrating, and at least the openings 9 are provided in corresponding positions with respect to the through holes 7 formed in the insulating layer 6. Therefore, when the one side of the substrate intermediate 4 is covered with the conductive mask 5, the positions of the opening 9 and the through hole 7 are aligned. The substrate intermediate body 4 is covered with the conductive mask 5 sandwiching both front and back surfaces, and is in close contact with at least a part of the conductive mask 5. In FIG. 1, the conductive pattern 5 is in close contact with the surface of the conductive pattern 8, but when the conductive pattern 8 is not formed, the conductive mask 5 is the insulating layer 6 (more specifically, a copper foil applied to the surface of the insulating layer 6). Adheres closely to the surface. Alternatively, when a land is formed on the insulating layer 6, the conductive mask 5 is in close contact with the land. In short, the conductive mask 5 is at least in close contact with the position protruding to the outermost side of the substrate intermediate 4. The conductive mask 5 may be a metal, or may be a resin in which a metal is stretched on one side or both sides. The conductive mask 5 may be plate-shaped or film-shaped such as copper foil. In the case of a resin, there is no particular limitation as long as the resin is not attacked by the plating solution 3.
　このようにして形成された被めっき処理体２は、上述したように電解槽１のめっき液３内に浸漬され、導電性マスク５を電極として電源１０から通電される。なお、この例では電解槽１の両側壁にさらなる電極１１を備えている。この通電操作により、図２に示すように、めっき液内のめっき金属１２が被めっき処理体２の全面に金属膜として付着する。すなわち、めっき金属１２は導電性マスク５の露出面と貫通穴７の内面に付着する。この後、被めっき処理体２をめっき液３から取り出し、導電性マスク５を除去することで、図３に示すように、貫通穴７の内面のみにめっき処理が施された基板１３を得ることができる。 The object to be plated 2 formed in this way is immersed in the plating solution 3 of the electrolytic cell 1 as described above, and is energized from the power source 10 using the conductive mask 5 as an electrode. In this example, further electrodes 11 are provided on both side walls of the electrolytic cell 1. By this energization operation, as shown in FIG. 2, the plating metal 12 in the plating solution adheres to the entire surface of the object to be plated 2 as a metal film. That is, the plating metal 12 adheres to the exposed surface of the conductive mask 5 and the inner surface of the through hole 7. Thereafter, the substrate 2 to be plated is taken out of the plating solution 3 and the conductive mask 5 is removed to obtain the substrate 13 in which only the inner surface of the through hole 7 is plated as shown in FIG. Can do.
　このように、上記本発明に係る方法では、基板中間体４の両面が導電性マスク５で覆われるため、めっき処理で基板中間体４の表裏両面に金属が付着することを防止できる。したがって、後工程における取扱い性が向上し、例えば後工程で基板中間体４にパターンを形成する際にはその作業性が向上する。また、導電性マスク５には貫通穴７に対応した位置に開口部９が設けられているため、めっき液内では貫通穴７の内面が露出する。このため、貫通穴７内に効率よくめっき処理を施すことができ、貫通穴７内のめっき厚を制御することが可能となる。特に、１００μｍ単位のめっき厚を形成したいときに大変便利である。導電性マスク５は、めっき金属が基板中間体４の表裏面に付着しないようにするためのレジストの代わりになると同時に、これが電極となり給電動作もする。このため、導電性マスク５のみで簡単かつ安価に貫通穴内にめっき処理を施すことができる。また、図のように、導体パターン８が予め設けられている場合には、導体パターン８にめっき金属１２が付着することなく、貫通穴７内に効率よくめっき処理を施すことができるため、好ましい。他方、導体パターン８が形成されていないような場合は、絶縁層７の表面の全面にわたって導電性マスク５が密着するため、めっき処理中に基板中間体４の表裏両面にめっき金属１２が付着することを確実に防止できる。 Thus, in the method according to the present invention, since both surfaces of the substrate intermediate 4 are covered with the conductive mask 5, it is possible to prevent the metal from adhering to both the front and back surfaces of the substrate intermediate 4 during the plating process. Therefore, the handleability in the post process is improved, and for example, when the pattern is formed on the substrate intermediate 4 in the post process, the workability is improved. Moreover, since the opening part 9 is provided in the position corresponding to the through hole 7 in the conductive mask 5, the inner surface of the through hole 7 is exposed in the plating solution. For this reason, the plating process can be efficiently performed in the through hole 7, and the plating thickness in the through hole 7 can be controlled. This is very convenient especially when it is desired to form a plating thickness of 100 μm. The conductive mask 5 serves as an electrode to prevent plating metal from adhering to the front and back surfaces of the substrate intermediate 4 and at the same time serves as an electrode to perform a power feeding operation. For this reason, it is possible to perform the plating process in the through hole simply and inexpensively with only the conductive mask 5. Further, as shown in the figure, when the conductor pattern 8 is provided in advance, it is preferable because the plating pattern 12 can be efficiently applied to the conductor pattern 8 without attaching the plating metal 12 to the conductor pattern 8. . On the other hand, when the conductive pattern 8 is not formed, the conductive mask 5 adheres over the entire surface of the insulating layer 7, so that the plating metal 12 adheres to both the front and back surfaces of the substrate intermediate 4 during the plating process. Can be surely prevented.
　なお、上記では基板１３として両面に導体パターン８が形成された両面基板について説明したが、本発明は片面基板、あるいは多層基板にも適用可能である。 In addition, although the above demonstrated the double-sided board in which the conductor pattern 8 was formed on both surfaces as the board | substrate 13, this invention is applicable also to a single-sided board or a multilayer board | substrate.
１　電解槽
２　被めっき処理体
３　めっき液
４　基板中間体
５　導電性マスク
６　絶縁層
７　貫通穴
８　導体パターン
９　開口部
１０　電源
１１　電極
１２　めっき金属
１３　基板 DESCRIPTION OF SYMBOLS 1 Electrolysis tank 2 To-be-plated body 3 Plating solution 4 Substrate intermediate body 5 Conductive mask 6 Insulating layer 7 Through-hole 8 Conductive pattern 9 Opening 10 Power supply 11 Electrode 12 Plating metal 13 Substrate

Claims (4)

  1. 　絶縁層を貫通した貫通穴を有する基板中間体と、前記貫通穴に対応した位置に貫通した開口部を有する２枚の導電性マスクとを用い、
    　前記開口部の位置を前記貫通穴に合わせて前記基板中間体の表裏両面の全域を前記各導電性マスクで覆い、
    　前記基板中間体の表裏両面の少なくとも一部に、それぞれの前記導電性マスクを密着させて被めっき処理体を形成し、
    　該被めっき処理体をめっき液に浸漬し、
    　前記貫通穴の内面を含んだ前記被めっき処理体の表面全体に金属を付着させてめっき処理し、
    　前記基板中間体から前記導電性マスクを除去することを特徴とする貫通穴めっき方法。     Using a substrate intermediate having a through hole penetrating an insulating layer and two conductive masks having an opening penetrating at a position corresponding to the through hole,
    Cover the entire area of the front and back surfaces of the substrate intermediate with the respective conductive masks by aligning the position of the opening with the through hole,
    Forming the object to be plated by adhering each of the conductive masks to at least a part of the front and back surfaces of the substrate intermediate,
    Immerse the object to be plated in a plating solution,
    Plating by attaching metal to the entire surface of the object to be plated including the inner surface of the through hole,
    A through-hole plating method, wherein the conductive mask is removed from the substrate intermediate.
  2. 　前記基板中間体を前記導電性マスクで覆う前に、前記絶縁層の少なくとも片面に導体パターンを形成することを特徴とする請求項１に記載の貫通穴めっき方法。 2. The through hole plating method according to claim 1, wherein a conductor pattern is formed on at least one surface of the insulating layer before the substrate intermediate is covered with the conductive mask.
  3. 　前記導電性マスクを前記基板中間体の表裏両面の全面にわたって密着させることを特徴とする請求項１に記載の貫通穴めっき方法。 2. The through-hole plating method according to claim 1, wherein the conductive mask is adhered to the entire surface of both sides of the substrate intermediate.
  4. 　請求項１～３のいずれかに記載の貫通穴めっき方法を用いて製造された基板であって、
    　前記絶縁層と、前記貫通穴と、前記貫通穴内に施されためっき金属とを有することを特徴とする基板。     A substrate manufactured using the through-hole plating method according to any one of claims 1 to 3,
    The board | substrate characterized by having the said insulating layer, the said through-hole, and the plating metal given in the said through-hole.
PCT/JP2011/054725 2011-03-02 2011-03-02 Through-hole plating method and substrate manufactured using same WO2012117533A1 (en)

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JPH10173337A (en) * 1996-12-06 1998-06-26 Fujitsu Ltd Production of printed board
JP2003309356A (en) * 2002-04-15 2003-10-31 Daiwa Kogyo:Kk Method of forming plated through-hole and method of manufacturing multilayer wiring board
JP2007059796A (en) * 2005-08-26 2007-03-08 Matsushita Electric Works Ltd Manufacturing method of pierced hole interconnect line

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JPS5932915B2 (en) * 1981-07-25 1984-08-11 「弐」夫 甲斐 Method for manufacturing wiring board with through holes
JPH09214134A (en) * 1996-01-31 1997-08-15 Matsushita Electric Works Ltd Manufacture of printed wiring board
TWI389205B (en) * 2005-03-04 2013-03-11 Sanmina Sci Corp Partitioning a via structure using plating resist

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Publication number Priority date Publication date Assignee Title
JPS5989783A (en) * 1982-11-13 1984-05-24 Yamada Mekki Kogyosho:Kk Electroplating device
JPH10173337A (en) * 1996-12-06 1998-06-26 Fujitsu Ltd Production of printed board
JP2003309356A (en) * 2002-04-15 2003-10-31 Daiwa Kogyo:Kk Method of forming plated through-hole and method of manufacturing multilayer wiring board
JP2007059796A (en) * 2005-08-26 2007-03-08 Matsushita Electric Works Ltd Manufacturing method of pierced hole interconnect line

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