KR100911204B1 - Manufacturing method of build-up high density printed curcuit board - Google Patents

Abstract

According to the present invention, a pretreatment step of pretreating the surface of the aluminum (Al) foil on the both sides with a zinc (Zn); A base plating step of electrolytic strike copper plating on both sides of the zinc quenching; A core manufacturing step of forming a core by forming a circuit pattern through copper plating resist coating, exposure, development and pattern plating on one surface of the strike copper plating surface; Removing the copper plating resist and removing the strike copper plating except for the circuit pattern portion of the core; Stacking a substrate by an insulating adhesive layer so that a pair of cores face a circuit pattern therein with a pre-formed build-up inner layer interposed therebetween; An etching step of removing the aluminum foil and the jink of the substrate, respectively; A via hole forming step of forming a via hole by laser drilling in a required portion between the buildup inner layer and the circuit pattern; Applying a copper plating resist on both sides of the substrate, exposing and developing the resist and then opening only the via hole; A copper plating step for copper plating the via hole; And a surface treatment step of applying a solder resist ink to the buried portion of the circuit pattern, and surface treating the exposed portion after peeling the copper plating resist.

According to the method of manufacturing a build-up integrated circuit board of the present invention, the copper wiring of the outer layer of the circuit board is formed inside the insulation layer, not the outside of the insulation layer. There is an advantage that can prevent the problem of reliability.

Al foil, etching, copper wiring

Description

Manufacturing method of high density integrated circuit board {Manufacturing method of build-up high density printed curcuit board}

The present invention relates to a method for manufacturing a buildup highly integrated circuit board, and more particularly, to a method for manufacturing an outer layer copper interconnection buried buildup integrated circuit board for effective formation and protection of fine copper wiring required for a buildup integrated circuit board. It is about.

Conventional methods for forming the circuit board copper wiring include a subtractive method and a semi-additive method.

The subtractive method uses a method of etching the copper plate to leave only the wiring part, and the semi-additive method means a method of plating only the wiring part on an open portion of the plating resist. Copper wiring formed by the commonly used subtractive method has a limitation in producing a stable yield of a substrate having a copper wiring of 30㎛ or less circuit width due to the characteristics of the chemical etching method using a nozzle spray.

That is, the buildup highly integrated circuit board manufactured by the conventional subtractive method is generally difficult to form fine copper wiring having a circuit width of 30 μm or less, and the outer layer copper wiring is formed outside the insulating layer. There was a problem that the wiring is only protected by the solder resist ink.

The present invention was created in order to solve the above-described problems, it is possible to form a fine copper wiring of a circuit width of less than 30㎛ level difficult to implement in the existing build-up high-integrated circuit board high build-up in which the copper wiring of the outer layer is buried It is an object of the present invention to provide a method for manufacturing a circuit board.

Method for producing a build-up integrated circuit board of the present invention for achieving the above object is a pre-treatment step of pre-treating the surface of the aluminum foil (Al) foil with a zinc (Zn) on both sides; A base plating step of electrolytic strike copper plating on both sides of the zinc quenching; A core manufacturing step of forming a core by forming a circuit pattern through copper plating resist coating, exposure, development and pattern plating on one surface of the strike copper plating surface; Removing the copper plating resist and removing the strike copper plating except for the circuit pattern portion of the core; Stacking a substrate by an insulating adhesive layer so that a pair of cores face a circuit pattern therein with a pre-formed build-up inner layer interposed therebetween; An etching step of removing the aluminum foil and the jink of the substrate, respectively; A via hole forming step of forming a via hole by laser drilling in a required portion between the buildup inner layer and the circuit pattern; Applying a copper plating resist on both sides of the substrate, exposing and developing the resist and then opening only the via hole; A copper plating step for copper plating the via hole; And a surface treatment step of applying a solder resist ink to the buried portion of the circuit pattern and surface-treating the exposed portion after peeling the copper plating resist.

In addition, the basic plating removal step is by soft etching, it is preferable that the etching step by alkaline etching.

In addition, the surface treatment of the exposed portion in the surface treatment step is preferably pre-flux or electroless plating.

Further, it is preferable that the thickness of the aluminum foil is 50 µm, the thickness of the zincate is 0.02 to 0.07 µm, and the thickness of the strike copper plating is 0.1 to 0.5 µm.

According to the manufacturing method of the build-up integrated circuit board according to the present invention,

First, a fine copper wiring of 30 μm or less, which is difficult to implement with a conventional subtractive method, may be formed using a method similar to a semi-additive.

Second, by forming the copper wiring of the circuit board outer layer inside the insulating layer, not the outside of the insulating layer, it is possible to prevent problems such as electrical disconnection, short circuit failure or reliability caused by the copper wiring peeled off due to mechanical, physical impact and environmental influences from the outside. In addition, by manufacturing the final outer layer substrate using the new build-up method to the inner layer substrate produced by the existing build-up method, it is possible to produce a circuit board of the outer layer copper wiring embedded.

Third, embedding the copper wiring inside the insulating layer has the advantage that not only the flatness of the surface of the substrate is improved but also the overall thickness of the substrate is reduced.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, terms or words used in the present specification and claims should not be construed as being limited to the common or dictionary meanings, and the inventors should properly explain the concept of terms in order to best explain their own invention. Based on the principle that it can be defined, it should be interpreted as meaning and concept corresponding to the technical idea of the present invention.

Therefore, the embodiments described in the specification and the drawings shown in the drawings are only the most preferred embodiment of the present invention and do not represent all of the technical idea of the present invention, various modifications that can be replaced at the time of the present application It should be understood that there may be equivalents and variations.

1 is a flowchart illustrating a method of manufacturing a buildup highly integrated circuit board according to the present invention.

As shown in Figure 1, the manufacturing method of the build-up integrated circuit board according to the present invention is a pre-treatment step (S1), the base plating step (S2), core manufacturing step (S3), the base plating removal step (S4), lamination step ( S5), an etching step S6, a via hole forming step S7, a resist coating step S8, a copper plating step S9, and a surface treatment step S10.

Hereinafter, a method of manufacturing a buildup highly integrated circuit board according to the present invention will be described in detail with reference to the accompanying drawings.

2 to 12 is a stage of a method for manufacturing a build-up integrated circuit board according to the present invention.

First, as shown in FIG. 2 and FIG. 3, the pretreatment step S1 is a step of pretreating the surface of the aluminum foil 110 with the gasket Zn 120 on both sides of the aluminum foil 110.

The conductive material used as a base layer for the semi-additive and similar application method is copper copper foil, but when the aluminum foil 110 is used as in the present invention, it is possible to obtain the advantages of low cost and excellent conductivity. Furthermore, when the process is performed with the aluminum foil 110, the stiffness is high compared to the copper foil, which is advantageous in terms of handling. At this time, the aluminum foil 110 is preferably an aluminum material having a purity of 99% or more for manufacturing a buried copper wiring.

In addition, in order to plate on the aluminum foil 110, it is necessary to remove an oxide film on the surface, and when the surface pretreatment of the aluminum foil 110 is performed by electroless plating with the zinc casting 120, the oxide film is removed and the electricity thereafter. A metallic zinc layer suitable for plating is formed. In general, the most effective and excellent properties as a seed layer for plating copper or nickel on aluminum is jincate.

Next, as shown in FIG. 3, the basic plating step S2 is a step of electrolytic strike copper plating 130 on both sides of the gasket 120. Strike copper plating uses high current to plate thin copper for short periods of time, including conventional cyanide copper plating (cyanide copper) and recently emerging eco-friendly cyanide-free copper plating. copper). Since the previous aluminum foil 110 and jingkae 120 layer is a base layer suitable for electroplating thereon, both of the cyan type and non-cyan type strike copper plating is possible.

The electrolytic strike copper plating 130 is intended to secure conductivity on the substrate for subsequent lactic acid copper plating 150, and is a method of replacing the existing chemical copper plating.

Here, the thickness of the aluminum foil 110 is 50㎛, the thickness of the gasket 120 is 0.02 to 0.07㎛, the thickness of the strike copper plating 130 is preferably 0.1 to 0.5㎛. This value refers to the minimum thickness, which is preferable considering the role of a seed layer for uniform plating and the three layers to be removed by chemical etching after lamination.

First of all, the aluminum foil 110 should be considered after the etching, but since it serves as an initial base core (base core), about 50㎛ is appropriate in consideration of handling, the thickness of the gasket 120 is over the aluminum When used as a pre-treatment for electroplating means a number that is usually used, strike copper plating 130 is also a suitable value when used as a seed layer (seed layer) of other plating.

Next, the core manufacturing step (S3) is a core pattern by forming a circuit pattern through coating, exposure, development and pattern plating of copper plating resist 140 on one surface of the strike copper plating 130 as shown in FIGS. 4A to 4C. 100) step. Since the copper plating resist 140 should be higher than the height of the lactic acid copper plating 150 to be described later, it is preferable that the copper plating resist 140 be a high-resolution dry film having a thickness of 20 μm applied by a roller type or a vacuum laminator. Only the portions to be plated upon subsequent lactic acid copper plating 150 are selectively opened.

The exposure may use a split exposure machine or a direct exposure machine, and the opposite side needs a dry film curing process through the entire surface exposure so as not to be the lactic acid copper plating 150.

The lactic acid copper plating 150 is electroplated with a thickness of 10 to 15 µm, and is plated on the surface of the base plating, that is, the strike copper plating 130, and a copper wiring having a width of 30 µm is preferably formed. Lactic acid copper plating applied in semi-additive and other similar applications can also form copper wiring having a width of 20 μm, but the purpose of the present invention is not to form a fine pattern circuit, so the width of copper wiring is 30 μm. Level is preferred.

And, the base plating removal step (S4) is a step of first peeling the copper plating resist 140, as shown in Figure 4d, and removing the strike copper plating 130 except for the circuit pattern portion of the core 100, a circuit is formed Unnecessary strike copper plating of the portion 130 is preferably removed by soft etching.

In this case, soft etching may be referred to as flash etching or the like, and means a method of etching and removing a thin plated film having a thickness of less than 1 μm (in the present invention, a strike copper plating layer). The purpose is to prevent shorting between copper wires formed by pattern plating.

Next, as illustrated in FIGS. 5 and 6, the stacking step S5 may include an insulating adhesive layer 300 such that the pair of cores 100 may face the circuit pattern 150 inwards with the build-up inner layer 200 interposed therebetween. Stacking the substrates 400 by). The buildup inner layer 200 refers to a buildup multilayer board manufactured by a general method, and each layer includes an insulating layer 210 and a circuit pattern 250, and the insulating adhesive layer 300 includes a prepreg ( prepreg) may be used, and epoxy bonding or pin lamination may be applied to the matching between the core 100 and the buildup inner layer 200 during lamination.

As shown in FIG. 7, the etching step S6 is a step of removing the aluminum foil 110 and the jinkate 120 of the substrate 400, respectively, and is preferably etched with sodium hydroxide or other alkaline chemicals. The buried circuit pattern 150 is not etched. That is, the buried circuit is formed by the etching step (S6).

Then, as shown in FIG. 8, the via hole forming step S7 may be performed by the insulating adhesive layer 300 between the circuit pattern 250 of the build-up inner layer 200 of the substrate 400 and the circuit pattern 150 of the core 100. ) To form a via hole 410 by laser drilling. In this case, since the via hole 410 is a micro via hole and the thickness of the buried circuit pattern 150 is about 10 to 15 μm, the via hole 410 should be processed using a UV laser and a CO ₂ laser in order.

In general, since CO ₂ lasers capable of high-speed via hole processing are mostly reflected (about 90%) on the surface of the copper plating layer, various methods of blackening or coating the copper plating layer surface are used to increase the absorption of the laser. However, when the thickness of the copper plating layer is more than 10 μm, it is difficult to process the via hole even by the above-described method. Therefore, the copper plating layers 130 and 150 are first processed by a UV laser having a high copper plating absorption rate, and then the adhesive layer 300 of the underlying layer is formed. Processes with silver CO ₂ lasers are advantageous.

9A and 9B, in the resist coating step S8, the copper plating resist 420 is applied to both surfaces of the substrate 400, and exposed and developed to open only the via hole 410. At this time, the copper plating resist 420 is preferably a high-definition dry film, the exposure is using a split exposure or direct exposure.

In addition, as shown in FIG. 9C, the copper plating step S9 is copper plating 430 in the via hole 410, which is lactic acid copper plating, and a copper plating thickness in the via hole 410 should be secured by 10 μm or more to ensure reliability.

The purpose of the via hole 410 is an electrical connection between layers of the multilayer circuit board, and the copper plating 430 in the via hole 410 serves as the connection path. In general, when the thickness of the copper plating 430 in the via hole 410 is smaller than 10 μm, voids or cracks may occur in the copper plating 430 in the via hole 410 in a subsequent manufacturing process and user environment. Since a short circuit (open) or a deterioration of electrical characteristics is caused, copper plating thickness in the via hole 410 is preferably secured by 10 μm or more in order to secure reliability.

Next, as shown in FIGS. 9D to 12, in the surface treatment step S10, after the copper plating resist 420 is peeled off, the solder resist 440 ink is applied to the embedded portion of the circuit pattern 150, and the exposed portion is exposed. There is a step of surface treatment 450.

The solder resist ink 440 is applied to a necessary portion through post-printing exposure, development, and curing, and in this case, exposure is performed using a split exposure or a direct exposure. In addition, the surface treatment 450 of the exposed portion is preferably preflux or electroless plating. The exposed part will then be an electrical connection to the component being assembled, so the surface must be treated with a surface that is suitable for soldering.

The completed build-up integrated circuit board is manufactured by inspecting whether copper wiring having a width of 30 μm of the outer layer is buried inside the insulating layer through single processing, electrical inspection, and visual inspection.

As described above, although the present invention has been described by way of limited embodiments and drawings, the present invention is not limited thereto and is intended by those skilled in the art to which the present invention pertains. Of course, various modifications and variations are possible within the scope of equivalents of the claims to be described.

1 is a flow chart showing a method of manufacturing a build-up integrated circuit board according to the present invention;

2 to 12 are cross-sectional views of a method for manufacturing a buildup highly integrated circuit board according to the present invention.

<Explanation of symbols for the main parts of the drawings>

100 ... core 110 ... aluminum foil

120 ... Jekate 130 ... Strike Copper Plating

140, 420 ... copper plating resist 150, 430 ... copper plating

200 ... Buildup Inner Layer 300 ... Insulation Adhesive Layer

400 Circuit board 410 Via hole

440 Solder resist 450 Surface treatment layer

Claims (4)

A pretreatment step of pretreating the surface with zinc ions (Zn) on both sides of the aluminum (Al) foil; A basic plating step of electrolytic strike copper plating on both sides of the ginkect; A core manufacturing step of forming a core by forming a circuit pattern through copper plating resist coating, exposure, development and pattern plating on one surface of the strike copper plating surface; Removing the copper plating resist and removing the strike copper plating except for the circuit pattern portion of the core; Stacking a substrate by an insulating adhesive layer with a pair of cores having a pre-formed build-up inner layer interposed therebetween such that a circuit pattern is directed inwardly; Etching to remove the aluminum foil and the zincite of the substrate, respectively; A via hole forming step of forming a via hole by laser drilling in a required portion between the buildup inner layer and the circuit pattern; A resist coating step of coating copper plating resist on both surfaces of the substrate, exposing and developing the via hole, and then opening only the via hole; A copper plating step of copper plating the via hole; And And peeling the copper plating resist, and applying a solder resist ink to a buried portion of the circuit pattern and surface treating the exposed portion. The method of claim 1, The basic plating removing step is a soft etching, the etching step is a manufacturing method of a high build-up integrated circuit board, characterized in that by alkaline etching. The method of claim 1, The surface treatment of the exposed portion in the surface treatment step is a method of manufacturing a build-up integrated circuit board, characterized in that the pre-flux or electroless plating. The method of claim 1, The thickness of the aluminum foil is 50㎛, the thickness of the gasket is 0.02 to 0.07㎛, the thickness of the strike copper plating is a manufacturing method of a high build-up integrated circuit board, characterized in that 0.1 to 0.5㎛.

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