WO2012113464A1 - Reflexionsschichtsystem und verfahren zu dessen herstellung - Google Patents
Reflexionsschichtsystem und verfahren zu dessen herstellung Download PDFInfo
- Publication number
- WO2012113464A1 WO2012113464A1 PCT/EP2011/061421 EP2011061421W WO2012113464A1 WO 2012113464 A1 WO2012113464 A1 WO 2012113464A1 EP 2011061421 W EP2011061421 W EP 2011061421W WO 2012113464 A1 WO2012113464 A1 WO 2012113464A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- metallic
- reflective
- layer system
- reflection
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000010410 layer Substances 0.000 claims abstract description 213
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000002346 layers by function Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 16
- 239000004332 silver Substances 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 14
- 238000004544 sputter deposition Methods 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 5
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 230000001737 promoting effect Effects 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 22
- 238000000576 coating method Methods 0.000 description 18
- 239000011248 coating agent Substances 0.000 description 17
- 239000003973 paint Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000004224 protection Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004922 lacquer Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 235000011150 stannous chloride Nutrition 0.000 description 2
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 description 2
- 238000007704 wet chemistry method Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006854 SnOx Inorganic materials 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- 229910007667 ZnOx Inorganic materials 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000005328 architectural glass Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 238000013041 optical simulation Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
- G02B5/0875—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal the reflecting layers comprising two or more metallic layers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S23/00—Arrangements for concentrating solar-rays for solar heat collectors
- F24S23/70—Arrangements for concentrating solar-rays for solar heat collectors with reflectors
- F24S23/82—Arrangements for concentrating solar-rays for solar heat collectors with reflectors characterised by the material or the construction of the reflector
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/40—Solar thermal energy, e.g. solar towers
Definitions
- the invention relates to a reflective layer system for solar applications with a solar-spectrum highly reflective layer deposited on a substrate.
- the invention also relates to a method for
- Reflection coating systems have been used in many areas of our lives since time immemorial, but they are becoming increasingly important nowadays, e.g. for mirrors in solving the energy issue too. While mirrors for usual indoor applications "only" the visible portions of the
- reflective coating systems for indoor and outdoor applications, e.g. solar applications (CSP - Concentrated Solar Power), by using a wet-chemical method to apply a reflective coating to a substrate, e.g. Glass or plastic is deposited.
- a substrate e.g. Glass or plastic
- Front side mirror is located.
- the reflective coating of the rear side mirrors Protected on the atmosphere side with single or multistage paint systems.
- silver is preferably used as the reflective layer and a particularly low-absorption and highly transparent substrate, e.g. so-called white glass or solar glass
- the silver layer is then closed by a copper layer, which also serves as an interface layer for the subsequent lacquer coating.
- Substrate edges whose bending and / or annealing may include the flat or already bent substrates and other steps, they are optionally polished again and washed. They are then still wet with an adhesion-promoting tin dichloride solution
- the disk passes successively through coating stations, where it is wet-chemically coated with silver and immediately thereafter with copper.
- the coating of the paint or the various paints of the multi-stage closes Paint system on. Subsequently, the entire coating is then dried at 150 ° C-200 ° C. By producing and drying the lacquer layer, the morphological structure of the reflective layer system is frozen as it were.
- the applied thicknesses of the important for the reflection but also costly material silver amount in the known systems between about 120nm and 150nm, resulting in relatively high material costs.
- Substrate runs and there causes higher layer thicknesses, often in the range of e.g. 150nm for silver lie.
- optical data for silver would result. It is therefore an object to provide a reflective layer system for solar applications and a method for its production, which can be achieved with lower material use higher TSR values.
- the object is achieved by a layer system with the features of claim 1 and a method according to claim 12. Embodiments of the layer system and the method are described in the respective dependent claims 2 to 11 and 13 to 22, respectively.
- the reflective layer system according to the invention comprises
- An optically dense layer also called opaque layer, is a layer that is so thick that it no longer has any transmission, i. that the total solar transmission (TST) is less than 0.1% and thus reaches its maximum reflection.
- TST total solar transmission
- a layer is opaque from a layer thickness of about 100nm-120nm. If, on the other hand, a reflection layer is produced which is significantly thinner than necessary to achieve the maximum reflection and which thus still has a low transmission component, a further reflective layer of another suitable material, arranged behind the reflection layer with respect to the direction of light incidence, can produce almost the same same same.
- This additional material can have a much lower individual reflection than the reflection layer, which also allows the use of inexpensive non-precious metals.
- the second and behind the reflection layer arranged layer can therefore serve in addition to the reflection of a complementary function, in particular the protection of
- Reflective layer For this reason, it will be referred to below as reflective for better distinction
- Substrate surface are pretreated. This is possible in accordance with various configurations of the layer system and the method by the deposition of a very thin and optically less than non-absorbing adhesion-promoting and diffusion-barrier layer on the substrate.
- This layer does not necessarily have to form a closed layer or surface on the substrate and can therefore also be regarded as a so-called seed layer. For this reason, very small layer thicknesses are sufficient here. They are usually below 5 nm. However, preference is given
- Layer thicknesses less than 1 nm and more preferably less than 0.3 nm.
- a plasma treatment e.g. by means of glow discharge or a temperature treatment (annealing) under vacuum, wherein the pretreatment steps can also be combined with each other.
- the reflective layer systems produced in this way fulfill the necessary requirements with regard to the chemical and thermal resistance as well as the adhesive strength, which are tested by various standardized tests.
- the mentioned pretreatment steps can also be combined with one another. This also includes that, in addition to separating a detention and
- Diffusion barrier layer can be a plasma treatment and / or annealing under vacuum.
- reflection layer and the functional layer can be adjacent to both layers
- Primer layer even in this position is not mandatory that it is deposited as a closed layer.
- an embodiment of the method comprises an alternating-layer system which comprises at least one layer sequence with a high-index dielectric layer and a low-index dielectric layer.
- Alternating layer system is e.g. suitable to increase the reflection. Because of this feature, that will
- the alternating-layer system is arranged at a rear-side mirror between the substrate and the metallic reflection layer or adhesion- promoting and diffusion-barrier layer.
- wet-chemical processes can be carried out by means of PVD processes, in particular by means of cathode sputtering according to preferred method embodiment, particularly dense and compact
- PVD technology Another advantage of using PVD technology is the fact that extremely homogeneous layer thickness distributions can be achieved even over large substrate widths.
- the method according to the invention is suitable not only for planar but also especially for curved substrates which
- the substrate may be deposited after the deposition of the substrate.
- Reflection layer optimal crystal structure and thus leads to even higher solar reflectance values.
- Fig. 1 shows an embodiment of the invention
- Reflection layer system as back mirror
- Fig. 2 shows another embodiment of the invention
- FIG. 3 shows a further embodiment of the invention
- the reflective layer system according to FIG. 1 comprises a
- Materials are used, e.g. Glass, plastic or even flexible materials.
- Magnetron sputtering deposited without further pretreatment and in the following layer thicknesses:
- the pretreated surface 0 of the substrate S is produced in this example by the deposition of the adhesion- promoting and diffusion-barrier layer HS. The incidence of light takes place in FIG. 1 through the substrate S, so that the
- Characterization of a reflection layer system for rear or front mirror is always defined by the light incident on the substrate S, the order of deposition is also to refer to the substrate S, depending on the predefined functionality as a return or
- one of the above can be another
- the layer system also have the following structure (not shown):
- the substrate was placed in front of the
- Sputter coating pretreated in vacuum usually in a dilute gas atmosphere, which may contain at least one of the gases Ar, O 2 , N 2 , CDA (Compressed Dry Air) or any mixtures thereof, at a pressure of 2 - 5 1CT 2 mbar a DC voltage ( DC) or
- MF Medium frequency
- the layer system of FIG. 1 was on the
- Fig. 2 shows another embodiment of a
- Alternating layer system WS 35nm, made of titanium dioxide (Ti02)
- HS Bonding and Diffusion Barrier Layer HS ⁇ 3nm (preferably ⁇ lnm), of Aluminum-doped Zinc Oxide (ZAO)
- the first two layers in the above order form the alternating layer system WS and are deposited directly on the substrate S.
- the two reflective layers R and S are in turn with respect to the light
- the adhesion-promoting and diffusion-barrier layer HS is inserted between the low-refractive-index dielectric layer of the alternating-layer system WS and the metallic reflection layer R. It acts in this as well as in the previously described
- FIG. 3 shows a modification of the layer system according to FIG. 2.
- an adhesion-promoting layer H for improving the adhesion of the metallic, reflective Functional layer F on the reflective functional layer F.
- the same materials are available as for the adhesion-promoting and
- Barrier layer HB i. a metal or an oxide of Zn, Si, Sn, Ti, Zr, Al, Ni, Cr, or a compound thereof.
- Possible alternative layer thicknesses for the reflective layer system according to the invention may e.g. by means of optical
- Reflection layer R and about 45nm thick
- underlying reflective functional layer F of a other metals such as stainless steel (SSt), nickel chrome (NiCr), molybdenum (Mo) or copper (Cu) can be achieved only by about 0.1% lower total solar reflection, compared for example with a 120-150nm thick, so optically dense Silver layer with any other layers behind it. This represents an enormous material cost savings of nearly 50%.
- SSt stainless steel
- NiCr nickel chrome
- Mo molybdenum
- Cu copper
- the materials used for the reflection layer R and the reflective functional layer F may also differ from the silver specified here. Also suitable according to the invention are metals such as aluminum, gold, platinum or an alloy which is at least one of the named ones
- the genanten metals all have a comparably high solar reflectance, optionally for certain wavelengths such as gold and platinum, and are thus suitable for the reflective layer system.
- the necessary minimum layer thicknesses are dependent on the material of the metallic, reflective functional layer F. These are to be determined, if appropriate, by experiments or by optical simulation, so that the maximum reflection can be achieved.
- a minimum copper layer thickness of 40 nm has been determined, for the layer combination silver with copper is the
- Silver layer thickness preferably between 40 nm and 100 nm, especially between 60 and 90 nm.
- the metallic reflective functional layer F materials such as copper, nickel, chromium, molybdenum, stainless steel, silicon, tin, zinc or an alloy containing at least one of the metals are considered. With these materials, the reflective properties can be linked with mechanical and / or chemical protection.
- niobium oxide (b 2 Ü5) can also be used as high-index layer.
- Example can be replaced by alumina (A1 2 0 3 ) or magnesium fluoride (MgF 2 ).
- Embodiments always by magnetron sputtering.
- the first and second embodiments the first and second embodiments, the second
- Bonding and diffusion barrier layer HS either from the ceramic target with or without additional
- Oxygen inlet in DC or MF mode or deposited by metal target with oxygen inlet in MF mode.
- the sputtering process is operated in oxidic mode.
- a particularly intense plasma is combined with low sputtering realized. This results in the deposition directly on the substrate S to an improved removal of the water always bound to the substrate surface and the optimal formation of a sufficiently thin
- Adhesive layer Adhesive layer.
- carbonaceous material Adhesive layer.
- carbonaceous material Adhesive layer.
- carbonaceous material Adhesive layer.
- Adhesive strength oxidized to gaseous C0 2 , which can be removed via the vacuum pump.
- adhesion-promoting and diffusion-barrier layer HS or the adhesion-promoting layer H other materials may alternatively be used, e.g. A material of a group of oxides comprising ZnOx, SiOx, SnOx, TiOx or ZrOx, wherein x ⁇ 2.
- a material of a group of oxides comprising ZnOx, SiOx, SnOx, TiOx or ZrOx, wherein x ⁇ 2.
- adhesion promoting layers are e.g. from the metallic target by DC sputtering, pulsed DC sputtering or MF
- the reflective silver layer of the above embodiments is deposited in the DC mode of the metallic target.
- Functional layer F deposited by DC sputtering from the metallic target.
- the layer system according to the invention e.g. after above
- Embodiments and the method of its preparation for example, in a 4mm thick solar glass, mirror with a TSR according to ISO 9050: 2003 of greater than 95% and thus at least 1-2% more TSR compared to the conventional wet-chemical coating technology are produced.
- the coated substrate is coated as usual with the one to multistage paint system LI, L2, L3.
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112011100068T DE112011100068A5 (de) | 2011-02-22 | 2011-07-06 | Reflexionsschichtsystem und Verfahren zu dessen Herstellung |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011012043 | 2011-02-22 | ||
DE102011012043.2 | 2011-02-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012113464A1 true WO2012113464A1 (de) | 2012-08-30 |
Family
ID=44510904
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2011/061421 WO2012113464A1 (de) | 2011-02-22 | 2011-07-06 | Reflexionsschichtsystem und verfahren zu dessen herstellung |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE112011100068A5 (de) |
WO (1) | WO2012113464A1 (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016201850A1 (de) * | 2016-02-08 | 2017-08-10 | Carl Zeiss Smt Gmbh | Optisches Element |
EP3771930A1 (de) * | 2019-07-31 | 2021-02-03 | Ningbo Radi-Cool Advanced Energy Technologies Co., Ltd. | Solarreflektierende folie und herstellungsverfahren dafür |
US11899227B2 (en) | 2019-07-31 | 2024-02-13 | Ningbo Radi-Cool Advanced Energy Technologies Co., Ltd. | Solar reflecting film and preparation method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991016197A1 (en) * | 1990-04-25 | 1991-10-31 | Cardinal Ig Company | Lead-free mirrors and environmentally safe manufacture thereof |
US5770270A (en) * | 1997-04-03 | 1998-06-23 | Research Electro-Optics, Inc. | Protective and/or reflectivity enhancement of noble metal |
WO2007095876A1 (de) * | 2006-02-21 | 2007-08-30 | Von Ardenne Anlagentechnik Gmbh | Hochreflektierendes schichtsystem, verfahren zur herstellung des schichtsystems und einrichtung zur durchführung des verfahrens |
-
2011
- 2011-07-06 WO PCT/EP2011/061421 patent/WO2012113464A1/de active Application Filing
- 2011-07-06 DE DE112011100068T patent/DE112011100068A5/de not_active Ceased
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991016197A1 (en) * | 1990-04-25 | 1991-10-31 | Cardinal Ig Company | Lead-free mirrors and environmentally safe manufacture thereof |
US5770270A (en) * | 1997-04-03 | 1998-06-23 | Research Electro-Optics, Inc. | Protective and/or reflectivity enhancement of noble metal |
WO2007095876A1 (de) * | 2006-02-21 | 2007-08-30 | Von Ardenne Anlagentechnik Gmbh | Hochreflektierendes schichtsystem, verfahren zur herstellung des schichtsystems und einrichtung zur durchführung des verfahrens |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016201850A1 (de) * | 2016-02-08 | 2017-08-10 | Carl Zeiss Smt Gmbh | Optisches Element |
EP3771930A1 (de) * | 2019-07-31 | 2021-02-03 | Ningbo Radi-Cool Advanced Energy Technologies Co., Ltd. | Solarreflektierende folie und herstellungsverfahren dafür |
US11899227B2 (en) | 2019-07-31 | 2024-02-13 | Ningbo Radi-Cool Advanced Energy Technologies Co., Ltd. | Solar reflecting film and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
DE112011100068A5 (de) | 2012-11-15 |
DE112011100068A8 (de) | 2012-12-27 |
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