WO2012113246A1 - 全局金属膜厚度测量装置 - Google Patents

全局金属膜厚度测量装置 Download PDF

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Publication number
WO2012113246A1
WO2012113246A1 PCT/CN2011/082384 CN2011082384W WO2012113246A1 WO 2012113246 A1 WO2012113246 A1 WO 2012113246A1 CN 2011082384 W CN2011082384 W CN 2011082384W WO 2012113246 A1 WO2012113246 A1 WO 2012113246A1
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WIPO (PCT)
Prior art keywords
film thickness
metal film
eddy current
khz
thickness measuring
Prior art date
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Ceased
Application number
PCT/CN2011/082384
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English (en)
French (fr)
Inventor
路新春
赵德文
曲子濂
赵乾
何永勇
孟永钢
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Tsinghua University
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Tsinghua University
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Publication date
Application filed by Tsinghua University filed Critical Tsinghua University
Priority to US13/985,789 priority Critical patent/US9377286B2/en
Publication of WO2012113246A1 publication Critical patent/WO2012113246A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G01B7/10—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G01B7/10—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance
    • G01B7/105—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance for measuring thickness of coating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B1/00—Measuring instruments characterised by the selection of material therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00

Definitions

  • the present invention relates to a measuring device, and more particularly to a global metal film thickness measuring device. Background technique
  • the wafer size reaches more than 300mm in diameter, and the characteristic line width has reached 45 legs.
  • New semiconductors, conductors and dielectric materials are used to overcome the work of increased integration. Problems with power consumption and signal delay. Copper interconnect delays limit the development of ICs to higher speeds, and low k dielectrics, small line widths, and multiple layers are an effective way to improve.
  • the mechanical strength of the low-k dielectric layer is much smaller than that of the copper wire, which causes the conventional large stress CMP polishing to be easily torn.
  • the solution is to use a two-step polishing method that first polishes the copper layer to a certain thickness with a large stress CMP and then uses stress-free polishing.
  • the eddy current method is a non-contact measurement method, which does not damage the copper film, and has high precision and is suitable.
  • the problems encountered in practical application are mainly It is the instability of the lift-off (that is, the distance between the eddy current sensor and the film to be tested), which affects the measurement accuracy of the film thickness. Summary of the invention
  • the present invention aims to solve at least one of the technical problems existing in the prior art.
  • a global metal film thickness measuring device includes: a base; a turntable, the turntable includes a stator portion and a rotor portion, and the stator portion is fixed at the a base on which a table is fixed, a vacuum line is disposed in the table, wherein a rotary joint of the rotor portion is connected to the vacuum line; and a linear unit, the linear unit includes a guide rail and a slider slidable along the guide rail, wherein the guide rail is fixed on the base, a fixed cantilever is fixedly connected to the slider, and the other end of the cantilever is disposed opposite to the table of the workbench
  • the probe has an eddy current probe in the probe.
  • the global metal film thickness measuring device can realize the self-adaptation of the lift-off height between the eddy current probe and the workpiece to be tested, thereby making the lift height between the eddy current probe and the workpiece to be tested. It is not affected by the mechanical motion accuracy of the device and the thickness of the workpiece, so that the lift height between the eddy current probe and the workpiece to be tested can be stabilized to a small extent without the eddy current probe being in contact with the workpiece to be tested. Within the scope, a fast and accurate global measurement of the film thickness of the workpiece to be tested is achieved.
  • the linear unit is a linear motor.
  • the eddy current probe is an axisymmetric coil.
  • the eddy current probe is provided with a sequence signal by a signal generator, and the signal of the eddy current probe is collected by a signal set card.
  • the signal generator provides sequence signals having a frequency of 1 kHz, 2 kHz, 4 kHz, 8 kHz, 16 kHz, 32 kHz, 64 kHz, 128 kHz, 512 kHz, 1 MHz, 2 MHz, 4 MHz, 8 MHz or 16 MHz.
  • a global metal film thickness measuring device includes: a base; a turntable, the turntable includes a stator portion and a rotor portion, and the stator portion is fixed at the a base on which a table is fixed, a vacuum line is disposed in the table, wherein a rotary joint of the rotor portion is connected to the vacuum line; and a linear unit, the linear unit includes a guide rail and a slider slidable along the guide rail, the rail is fixed on the base, a cantilever is hinged on the slider, and an electromagnet is fixed on the slider, wherein a lower end of the cantilever is fixed with The opposite end of the electromagnet, the other end of the cantilever is provided with a probe opposite to the table surface of the table, and the probe is provided with an eddy current probe, a vertical vent hole and a vertical section. a flow hole, the vent hole and the throttle hole are coaxially connected
  • the global metal film thickness measuring device can realize the self-adaptation of the lift-off height between the eddy current probe and the workpiece to be tested, thereby making the lift height between the eddy current probe and the workpiece to be tested. It is not affected by the mechanical motion accuracy of the equipment and the thickness of the workpiece. Moreover, by articulating the cantilever on the slider, the lift height between the eddy current probe and the workpiece to be tested can be stabilized in the case where the eddy current probe is not in contact with the workpiece to be tested. In a smaller range, a fast and accurate global measurement of the film thickness of the workpiece to be tested is achieved.
  • the aperture of the vent is larger than the aperture of the orifice.
  • the eddy current probe is an axisymmetric coil.
  • the eddy current probe is provided with a sequence signal by a signal generator, and the signal of the eddy current probe is collected by a signal set card.
  • the signal generator provides sequence signals having a frequency of 1 kHz, 2 kHz, 4 kHz, 8 kHz, 16 kHz, 32 kHz, 64 kHz, 128 kHz, 512 kHz, 1 MHz, 2 MHz, 4 MHz, 8 MHz or 16 MHz.
  • FIG. 1 is a schematic structural view of a global metal film thickness measuring apparatus according to an embodiment of the present invention
  • Figure 2 is a partial enlarged view of the area A in Figure 1;
  • FIG. 3 is a schematic structural view of a global metal film thickness measuring device according to an embodiment of the present invention.
  • 4a is a schematic view showing the measurement of the workpiece of the eddy current probe of the global metal film thickness measuring device according to the embodiment of the present invention
  • Figure 4b is a probe coil equivalent circuit and an eddy current equivalent circuit
  • Figure 4c is a film thickness measuring circuit principle
  • FIG. 5 is a schematic diagram of global measurement using a global metal film thickness measuring apparatus according to an embodiment of the present invention
  • FIG. 6 is a schematic structural view of a global metal film thickness measuring apparatus according to an embodiment of the present invention.
  • Figure 7 is a partial enlarged view of the B region of Figure 6;
  • Figure 8 is a schematic diagram of a signal processing unit of a global metal film thickness measuring apparatus in accordance with an embodiment of the present invention.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
  • installation is to be understood broadly, and may be, for example, mechanical or electrical, or both.
  • the internal connections of the components can be directly connected or indirectly connected through an intermediate medium.
  • the two adjacent devices on the device pass through the processing medium. The connection between them is also called “connected” or “connected.”
  • connection is also called “connected” or “connected.”
  • a global metal film thickness measuring apparatus includes a base 10, a turntable 20, and a linear unit 30.
  • the turntable 20 includes a stator portion 21 and a rotor portion 22, and the stator portion 21 is fixed to the base 10.
  • the rotor portion 22 is fixed with a table 50 for placing the workpiece 90 to be tested, and a vacuum line is provided in the table 50.
  • the rotary joint 23 of the rotor portion 22 is connected to the vacuum line to effect adsorption of the workpiece 90 by the table 50 by vacuum.
  • the linear unit 30 includes a guide rail 31 and a slider 32 slidable along the guide rail 31.
  • the guide rail 31 is fixed on the base 10.
  • the slider 32 is fixedly connected with a horizontal cantilever 40.
  • the other end of the cantilever 40 is provided with a probe 80 opposite to the table surface of the worktable 50.
  • the probe 80 is provided with an eddy current probe. 82.
  • the global metal film thickness measuring device can realize the self-adaptation of the lift-off height between the eddy current probe 82 and the workpiece 90 to be tested, thereby making the lift height between the eddy current probe 82 and the workpiece 90 to be tested. It is not affected by the mechanical motion accuracy of the device and the thickness of the workpiece, so that the lift height between the eddy current probe 82 and the workpiece 90 to be tested can be stabilized to a small extent without the eddy current probe 82 being in contact with the workpiece 90 to be tested. Within the scope, a fast and accurate global measurement of the film thickness of the workpiece to be tested is achieved.
  • a global metal film thickness measuring apparatus includes a base 10, a turntable 20, and a straight unit 30.
  • the turntable 20 includes a stator portion 21 and a rotor portion 22, and the stator portion 21 is fixed to the base 10.
  • the rotor portion 22 is fixed with a table 50 for placing the workpiece 90 to be tested, and a vacuum line is provided in the table 50.
  • the rotary joint 23 of the rotor portion 22 is connected to the vacuum line to effect adsorption of the workpiece 90 by the table 50 by vacuum.
  • the linear unit 30 includes a guide rail 31 and a slider 32 slidable along the guide rail 31.
  • the guide rail 31 is fixed on the base 10, and the cantilever 40 is hinged on the slider 32 (specifically, the slider 32 can be hinged to the cantilever 40 through the bearing 60 and the pin 70), and the electromagnet 33 is fixed on the slider 32, wherein the cantilever An iron block 41 opposed to the electromagnet 33 is fixed below one end of the 40, and the other end of the cantilever 40 is provided with a probe 80 opposed to the table surface of the table 50 so that the iron block 41 can be sucked by the control electromagnet 33.
  • the lifting and lowering of the probe 80 is performed.
  • the probe 80 is provided with an eddy current probe 82, a vertical vent 81 and a vertical orifice 83.
  • vent 81 and the orifice 83 are coaxially connected (wherein the aperture of the vent 81 can be larger than the orifice The aperture of the 83), and the vent hole 81 and the orifice 83 pass through the probe 80 so that the probe 80 can be floated on the surface of the workpiece 90 to be tested by venting the vent 81.
  • the global metal film thickness measuring device can realize the self-adaptation of the lift-off height between the eddy current probe 82 and the workpiece 90 to be tested, thereby making the lift height between the eddy current probe 82 and the workpiece 90 to be tested. It is not affected by the mechanical motion accuracy of the equipment and the thickness of the workpiece. Moreover, by articulating the cantilever 40 to the slider 32, it is possible to When the eddy current probe 82 is not in contact with the workpiece 90 to be tested, the lift height between the eddy current probe 82 and the workpiece 90 to be tested is stabilized in a smaller range, thereby realizing a fast and accurate global measurement of the film thickness of the workpiece to be tested. .
  • the global metal film thickness of the workpiece 90 to be tested is measured by the global metal film thickness measuring apparatus of the embodiment of the present invention with reference to Figs.
  • the electromagnet 33 can be de-energized, and the probe can be controlled by controlling the pressure and flow rate of the gas passing through the vent hole 81.
  • the gap between the 80 and the workpiece 90 to be tested, by the rotation of the turret 20 and the translation of the slider 32, the eddy current probe 82 can be swept or positioned to the desired position to be measured.
  • the eddy current probe 82 may be an axisymmetric line 821 821.
  • Below the eddy current probe 82 there is a workpiece 90 to be tested, and the upper surface of the workpiece 90 to be tested is a metal film 901 to be tested.
  • calibration is performed to take a series of standard workpieces of known metal film thickness.
  • the probe 80 is operated, the standard workpiece is rotated by the table 50, and the eddy current probe 82 is driven by the linear unit 30.
  • the resistance of the coil is R1, which can be equivalent to the loop 823.
  • R1 is the resistance value of the metal film in the equivalent loop.
  • the frequency frequency rate changes and changes.
  • the medium ⁇ is the magnetic permeability rate
  • ⁇ is the electrical conductivity rate.
  • the LL1122, LL2211, and LL22 are all frequently counted, and do not change with the frequency of the circular frequency.
  • the real part LL follows the change of the frequency-frequency rate ⁇ , and the curve curve is a single-tuned transfer reduction. .
  • the equivalent electric inductance LL is not only related to the equivalent inductance LL22 of the electric inductance LL11 and the metal metal film, and the mutual interaction between them.
  • the mutual inductance LL2211 has a related relationship, and it also changes with the equivalent electric resistance resistance RR22 of the metal metal film. .
  • the RR22 is reduced by a small amount, and the corresponding LL is also changed. Therefore, the measured quantity LL is passed.
  • the change of the change can be determined by reversing to determine the thickness of the thin film of the thin metal film, and the equivalent effect of the electric inductance LL can be expressed as
  • the equivalent inductance L is derived for the excitation signal frequency ⁇ , and L' has the maximum value, that is, the change of L with
  • the C/D value corresponds to the inflection point of the curve of the equivalent inductance L as a function of the excitation signal frequency ⁇ , and the inflection point corresponds to the characteristic frequency ⁇ ⁇ if it can be determined!
  • the characteristic frequency ⁇ ⁇ is reached at the maximum value
  • the thickness of the film to be tested can be obtained by a one-to-one correspondence between the characteristic frequency and the thickness of the metal film.
  • this measurement value has nothing to do with lifting h (R2, L2 is not related to lifting).
  • the global measurement of the metal film thickness is performed by the eddy current probe 82 above the metal film 901 to be tested from the center to the edge of the workpiece 90 to be tested or from the edge to the center according to the requirements of the number of measurement points.
  • a certain distance, pause, rotate one week measure at a certain angle according to the number of measurement points.
  • step to the next measurement circle and continue measurement according to each measurement point (i, j)
  • the step distance position ( ) and the rotation angle ( ⁇ ) and the film thickness value can obtain the global film thickness distribution of the workpiece 90 to be tested.
  • the cantilever 40 may be fixedly coupled to the slider 32 when the gap fluctuations for the eddy current probe 82 are not critical.
  • the linear unit 30 may be a linear motor.
  • the linear unit 30 may also be a rail screw unit mating motor, wherein the boom 40 may be fixed to the motor.
  • the slider 32 can be linearly moved in the horizontal direction by the linear motor or the motor matched with the guide screw unit.
  • the probe 80 does not need an air floating device, and the probe 80 and the table 50 can be adjusted during installation.
  • the gap between them is the required value, and the characteristic frequency value is determined using the frequency sweep measurement principle to determine the metal film thickness.
  • the computer program controls the motor controller, and when the probe 80 is paused, the signal generator can provide a sequence signal to the eddy current probe 82.
  • the eddy current probe 82 can provide a sequence signal from the signal generator.
  • the frequency of the sequence signal may be 1 kHz, 2 kHz, 4 kHz, 8 kHz, 16 kHz, 32 kHz, 64 kHz, 128 kHz, 512 kHz, 1 MHz, 2 MHz, 4 MHz, 8 MHz or 16 MHz.
  • the signal gathers the signal of the eddy current probe 82 and inputs the signal of the eddy current probe 82 to the computer, which processes the signal of the eddy current probe 82 and records the film thickness value.
  • the computer issues a command to the motor driver, the motor driver controls the motor to rotate the turntable 20 and pauses at the next measuring point on the same circumference, completing the film at the point Thick measurement, repeat this step to complete the film thickness measurement of each measurement point in a circle.
  • the computer After completing the measurement of the film thickness of each measuring point in a circumference, the computer issues an instruction to the motor driver, and the motor driver controls the linear motor or the wire screw unit in the linear unit 30 to cooperate with the motor through the slider 32 and Cantilever 40 will be powered
  • the eddy current probe 82 steps to the next measurement circumference and continues the measurement until a global film thickness distribution of the workpiece 90 to be tested is obtained.
  • the probe 80 is not working, the electromagnet 33 can be energized, the probe 80 is lifted by the rotation of the cantilever 40, and the linear unit 30 is moved away from the workpiece 90 to be tested, so that the measurement is performed.
  • the head 80 leaves the surface of the workpiece 90 to be tested, facilitating loading and unloading of the workpiece 90 to be tested.
  • the description of the terms “one embodiment”, “some embodiments”, “example”, “specific example”, or “some examples” and the like means a specific feature described in connection with the embodiment or example.
  • a structure, material or feature is included in at least one embodiment or example of the invention.
  • the schematic representation of the above terms does not necessarily mean the same embodiment or example.
  • the particular features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples.

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  • General Physics & Mathematics (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Description

全局金属膜厚度测量装置
技术领域
本发明涉及一种测量装置， 尤其是涉及一种全局金属膜厚度测量装置。 背景技术
随着集成电路 （ IC ) 制造技术的发展， 晶圆尺寸达到直径 300mm 以上， 特征线宽 已达到 45腿以下， 釆用新的半导体、 导体和介电材料以克服集成度提高所带来的功耗 和信号延迟方面的问题。 铜互连延迟限制了 IC向更高速发展， 低 k介质、 小线宽及多 层数是改善的有效途径。但低 k介质层的机械强度远小于铜线， 导致传统的大应力 CMP 抛光容易撕裂。 其解决方案是釆用两步抛光法， 即先釆用大应力 CMP将铜层抛光到一 定厚度， 然后再利用无应力抛光。 在第二步无应力抛光前， 需要精确确定工件上各个 点的铜膜厚度， 电涡流方法是非接触式测量方法， 不破坏铜膜， 精度高， 较为适用， 在实际应用过程遇到的问题主要是提离 （即电涡流传感器与被测薄膜间的距离） 的不 稳定， 影响膜厚测量精度。 发明内容
本发明旨在至少解决现有技术中存在的技术问题之一。
为此， 本发明的目的在于提出一种可以将提离高度稳定在一个较小范围内、 实现对工 件膜厚度的快速准确测量的全局金属膜厚度测量装置。
根据本发明第一方面的实施例提出一种全局金属膜厚度测量装置， 所述全局金属膜厚 度测量装置包括： 底座； 转台， 所述转台包括定子部分和转子部分， 所述定子部分固定在 所述底座上， 所述转子部分上固定有工作台， 所述工作台内设有真空管路， 其中所述转子 部分的旋转接头与所述真空管路相连； 和直线单元， 所述直线单元包括导轨和可沿所述导 轨滑动的滑块， 其中所述导轨固定在所述底座上， 所述滑块上固定连接有水平的悬臂， 所 述悬臂的另一端设置有与所述工作台的台面相对的测头， 所述测头内设有电涡流探头。
根据本发明实施例的全局金属膜厚度测量装置可以实现所述电涡流探头与待测工件 之间的提离高度的自适应， 从而使所述电涡流探头与待测工件之间的提离高度不受设备机 械运动精度和工件厚度的影响， 这样可以在所述电涡流探头与待测工件不接触的情况下将 所述电涡流探头与待测工件之间的提离高度稳定在较小的范围内， 实现了对待测工件的膜 厚度的快速准确全局测量。 根据本发明的一个实施例， 所述直线单元为直线电机。
根据本发明的一个实施例， 所述电涡流探头为轴对称线圏。
根据本发明的一个实施例， 所述电涡流探头由信号发生器提供序列信号， 并由信号釆 集卡釆集所述电涡流探头的信号。
根据本发明的一个实施例， 所述信号发生器提供频率为 lKHz、 2KHz、 4KHz、 8KHz、 16KHz、 32KHz、 64KHz、 128KHz、 512KHz、 lMHz、 2MHz、 4MHz、 8MHz或 16MHz的序列信号。
根据本发明第二方面的实施例提出一种全局金属膜厚度测量装置， 所述全局金属膜厚 度测量装置包括： 底座； 转台， 所述转台包括定子部分和转子部分， 所述定子部分固定在 所述底座上， 所述转子部分上固定有工作台， 所述工作台内设有真空管路， 其中所述转子 部分的旋转接头与所述真空管路相连； 和直线单元， 所述直线单元包括导轨和可沿所述导 轨滑动的滑块， 所述导轨固定在所述底座上， 所述滑块上铰接有悬臂且所述滑块上固定有 电磁铁， 其中所述悬臂的一端的下方固定有与所述电磁铁相对的铁块， 所述悬臂的另一端 设有与所述工作台的台面相对的测头， 所述测头内设有电涡流探头、 竖直的通气孔和竖直 的节流孔， 所述通气孔和所述节流孔同轴相连且贯通所述测头。
根据本发明实施例的全局金属膜厚度测量装置可以实现所述电涡流探头与待测工件 之间的提离高度的自适应， 从而使所述电涡流探头与待测工件之间的提离高度不受设备机 械运动精度和工件厚度的影响。 而且， 通过将所述悬臂铰接在所述滑块上， 从而可以在所 述电涡流探头与待测工件不接触的情况下将所述电涡流探头与待测工件之间的提离高度稳 定在更小的范围内， 实现了对待测工件的膜厚度的快速准确全局测量。
根据本发明的一个实施例， 所述通气孔的孔径大于所述节流孔的孔径。
根据本发明的一个实施例， 所述电涡流探头为轴对称线圏。
根据本发明的一个实施例， 所述电涡流探头由信号发生器提供序列信号， 并由信号釆 集卡釆集所述电涡流探头的信号。
根据本发明的一个实施例， 所述信号发生器提供频率为 lKHz、 2KHz、 4KHz、 8KHz、 16KHz、 32KHz、 64KHz、 128KHz、 512KHz、 lMHz、 2MHz、 4MHz、 8MHz或 16MHz的序列信号。
本发明的附加方面和优点将在下面的描述中部分给出， 部分将从下面的描述中变得明 显， 或通过本发明的实践了解到。 附图说明
本发明的上述和 /或附加的方面和优点从结合下面附图对实施例的描述中将变得明显 和容易理解， 其中：
图 1是根据本发明实施例的全局金属膜厚度测量装置的结构示意图； 图 2是图 1中 A区域的局部放大图；
图 3是根据本发明实施例的全局金属膜厚度测量装置的结构示意图；
图 4a 是根据本发明实施例的全局金属膜厚度测量装置的电涡流探头的线圏对工件的 测量示意图；
图 4b是探头线圏等效电路和电涡流等效电路；
图 4c是膜厚测量电路原理；
图 5是利用根据本发明实施例的全局金属膜厚度测量装置进行全局测量的示意图； 图 6是根据本发明实施例的全局金属膜厚度测量装置的结构示意图；
图 7是图 6中 B区域的局部放大图； 和
图 8是根据本发明实施例的全局金属膜厚度测量装置的信号处理单元的原理图。
10-底座， 20-转台， 21-定子部分，
22-转子部分， 23-旋转接头， 30-直线单元，
31-导轨， 32-滑块， 33-电磁铁，
40-悬臂， 41-铁块， 50-工作台，
60-轴承， 70-销轴， 80-测头，
81-通气孔， 82-电涡流探头， 821-电涡流探头线圏
823-探头线圏等效电路, 824-电涡流等效电路,
825-膜厚测量电路原理; 83-节流孔， 90- 901-待测金属膜。 具体实施方式
下面详细描述本发明的实施例， 所述实施例的示例在附图中示出， 其中自始至终相同 或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。 下面通过参考附图描 述的实施例是示例性的， 仅用于解释本发明， 而不能理解为对本发明的限制。
在本发明的描述中， 术语 "纵向"、 "横向"、 "上"、 "下 "、 "前"、 "后"、 "左"、 "右"、 "竖直"、 "水平"、 "顶"、 "底" 等指示的方位或位置关系为基于附图所示的方位或位置关 系， 仅是为了便于描述本发明而不是要求本发明必须以特定的方位构造和操作， 因此不能 理解为对本发明的限制。
此外， 术语 "第一"、 "第二" 仅用于描述目的， 而不能理解为指示或暗示相对重要性。 在本发明的描述中， 除非另有规定和限定， 需要说明的是， 术语 "安装"、 "相连"、 "连 接" 应做广义理解， 例如， 可以是机械连接或电连接， 也可以是两个元件内部的连通， 可 以是直接相连， 也可以通过中间媒介间接相连， 设备上相邻的两个装置之间通过加工媒介 之间的联系也称之为 "相连" 或 "连接"。 对于本领域的普通技术人员而言， 可以根据具体 情况理解上述术语的具体含义。
下面参照图 6描述根据本发明实施例的全局金属膜厚度测量装置。 如图 6所示， 根 据本发明实施例的全局金属膜厚度测量装置包括底座 10、 转台 20和直线单元 30。
转台 20包括定子部分 21和转子部分 22 , 定子部分 21固定在底座 10上， 转子部分 22 上固定有工作台 50用于放置待测工件 90, 工作台 50内设有真空管路。 其中， 转子部分 22 的旋转接头 23与所述真空管路相连， 以便通过真空实现工作台 50对工件 90的吸附。 直线 单元 30包括导轨 31和可沿导轨 31滑动的滑块 32。 其中， 导轨 31 固定在底座 10上， 滑 块 32上固定连接有水平的悬臂 40, 悬臂 40的另一端设置有与工作台 50的台面相对的测 头 80, 测头 80内设有电涡流探头 82。
根据本发明实施例的全局金属膜厚度测量装置可以实现电涡流探头 82与待测工件 90 之间的提离高度的自适应， 从而使电涡流探头 82与待测工件 90之间的提离高度不受设备 机械运动精度和工件厚度的影响， 这样可以在电涡流探头 82与待测工件 90不接触的情况 下将电涡流探头 82与待测工件 90之间的提离高度稳定在较小的范围内， 实现了对待测工 件的膜厚度的快速准确全局测量。
下面参照图 1和图 2描述根据本发明实施例的全局金属膜厚度测量装置。 如图 1和 图 2所示， 根据本发明实施例的全局金属膜厚度测量装置包括底座 10、 转台 20和直线单 元 30。
转台 20包括定子部分 21和转子部分 22 , 定子部分 21固定在底座 10上， 转子部分 22 上固定有工作台 50用于放置待测工件 90, 工作台 50内设有真空管路。 其中， 转子部分 22 的旋转接头 23与所述真空管路相连， 以便通过真空实现工作台 50对工件 90的吸附。 直线 单元 30包括导轨 31和可沿导轨 31滑动的滑块 32。 导轨 31固定在底座 10上， 滑块 32上 铰接有悬臂 40 (具体地， 滑块 32可以通过轴承 60和销轴 70与悬臂 40铰接）， 且滑块 32 上固定有电磁铁 33, 其中悬臂 40的一端的下方固定有与电磁铁 33相对的铁块 41 , 悬臂 40的另一端设有与工作台 50的台面相对的测头 80, 以便可以通过控制电磁铁 33对铁块 41 的吸和放来实现测头 80的抬起和放下。 测头 80 内设有电涡流探头 82、 竖直的通气孔 81和竖直的节流孔 83, 通气孔 81和节流孔 83同轴相连（其中， 通气孔 81的孔径可以大 于节流孔 83的孔径）， 且通气孔 81和节流孔 83贯通测头 80, 以便可以通过对通气孔 81 进行通气来实现测头 80气浮于待测工件 90的表面。
根据本发明实施例的全局金属膜厚度测量装置可以实现电涡流探头 82与待测工件 90 之间的提离高度的自适应， 从而使电涡流探头 82与待测工件 90之间的提离高度不受设备 机械运动精度和工件厚度的影响。 而且， 通过将悬臂 40铰接在滑块 32上， 从而可以在电 涡流探头 82与待测工件 90不接触的情况下将电涡流探头 82与待测工件 90之间的提离高 度稳定在更小的范围内， 实现了对待测工件的膜厚度的快速准确全局测量。
下面参照图 1-8 描述利用本发明实施例的全局金属膜厚度测量装置测量待测工件 90 的全局金属膜厚度。
在利用本发明实施例的全局金属膜厚度测量装置测量待测工件 90 的全局金属膜厚度 时， 电磁铁 33可以断电， 并可以通过控制经过通气孔 81的气体的压力和流量来控制测头 80与待测工件 90之间的间隙， 通过转台 20的旋转和滑块 32的平移， 电涡流探头 82可以 扫过或定位到所需要测量的位置。
图 4a-图 4c示出了本发明实施例的全局金属膜厚度测量装置的电涡流探头 82测量待 测工件 90的膜厚的原理。 具体地， 电涡流探头 82可以是轴对称线圏 821。 电涡流探头 82 的下方有待测工件 90 , 待测工件 90的上表面为待测金属膜 901。 在测量开始前， 先要进行 标定， 取一系列已知金属膜厚度的标准工件， 测头 80工作， 所述标准工件在工作台 50的 带动下旋转， 电涡流探头 82在直线单元 30的带动下运行到待测工件 90的待测点上方， 在 工作时通入交流信号 U0,产生交变磁场，线圏电阻为 R1 ,可等效为环路 823 , 当待测金属膜 901靠近线圏时，由于空间中存在交变磁场，待测金属膜 901内产生电涡流即环状电流，该环 状电流可等效为环路 824, R2为等效环路中金属薄膜的电阻值，环路 823和环路 824之间通 过互感 L12和 L21相互作用， 使用基尔霍夫定律对等效电路原理图 825分析，得到线圏 821 的等效电感为 -
R ω^2 +ηo L21 2 (coL2 +jR2 ) , 可见， 等效电感 Lc 的实部 L 随频率变化， 即 2 L21 , L2是不随激励频率改变的。
时时，， 金金属属膜膜的的等等效效电电阻阻 RR22也也是是不不随随
Figure imgf000007_0001
频频率率改改变变的的。。 以以上上公公式式中中 μμ为为磁磁导导率率，， 《《为为圆圆频频率率，， σσ为为电电导导率率。。 对对于于金金属属铜铜，， 在在 11MMHHzz时时，， 其其趋趋肤肤深深度度为为 6666.. 77 μμ ιιηη。。
因因此此在在 LL1122 ,, LL2211 ,, LL22均均为为常常数数，， 不不随随圆圆频频率率变变化化的的情情况况下下，， 等等效效电电感感的的实实部部 LL随随频频率率 ωω的的变变化化关关系系曲曲线线是是单单调调的的递递减减的的。。
可可见见等等效效电电感感 LL不不仅仅与与线线圏圏电电感感 LL11和和金金属属膜膜等等效效电电感感 LL22以以及及它它们们间间的的互互感感 LL2211有有关关，， 还还随随金金属属膜膜的的等等效效电电阻阻 RR22变变化化。。 当当金金属属膜膜厚厚度度增增加加时时，， RR22减减小小，， 相相应应的的 LL也也就就发发生生变变化化，， 因因而而通通过过测测量量 LL 的的变变化化就就可可以以反反过过来来确确定定金金属属薄薄膜膜厚厚度度，， 在在这这里里等等效效电电感感 LL 可可表表示示为为
Figure imgf000008_0001
为了获得尽可能高的分 ， 将等效电感 L 对激励信号频率 ω求导得 , L'具有最大值， 即 L 随 ( 的变
Figure imgf000008_0002
化最显著， 该频率点定义为特征频率。
上述分析得知： C/D值对应于等效电感 L随激励信号频率 ω的变化关系曲线的拐点， 拐点对应于特征频率 ω θ , 如果能够确定出！达到最大值时的特征频率 ω θ , 就能通过特征 频率与金属薄膜厚度的一一对应关系得出被测薄膜的厚度。 并且由 I ^的表达式可知， 此测 量值与提离 h无关 （R2 , L2与提离无关）。
如图 5所示， 金属膜厚全局测量的方法是， 根据测量点数的要求， 电涡流探头 82在待 测金属膜 901的上方从待测工件 90的中心到边缘或者从边缘到中心每次步进一定距离后暂 停， 旋转一周， 根据测量点数要求间隔一定角度测量一次， 该圆周的测点测完后， 步进到 下一测量圆周， 继续测量， 根据每个测点 （ i , j ) 的步进距离位置（ ）和旋转角度（Θ )以 及膜厚值， 即可得到待测工件 90全局的膜厚分布。 在本发明的一些实施例中， 如图 6和图 7所示， 当对于电涡流探头 82的间隙波动要求 不高的情况下， 悬臂 40可以与滑块 32固定连接。 具体地， 直线单元 30可以是直线电机。 直线单元 30还可以是导轨丝杠单元配合电机， 其中悬臂 40可以固定在所述电机上。 滑块 32可以在所述直线电机或与导轨丝杠单元配合的电机的带动下在水平方向上直线移动， 这 时测头 80不需要气浮装置， 安装时可以调整测头 80与工作台 50之间的间隙为所需要值， 使用扫频测量原理确定特征频率值从而确定金属膜厚。
如图 8所示， 在信号处理单元中， 计算机程序控制电机控制器， 当测头 80暂停时， 信 号发生器可以向电涡流探头 82提供序列信号。 换言之， 电涡流探头 82可以由所述信号发 生器提供序列信号。具体地， 所述序列信号的频率可以是 lKHz、 2KHz、 4KHz、 8KHz、 16KHz、 32KHz、 64KHz、 128KHz、 512KHz、 lMHz、 2MHz、 4MHz、 8MHz或 16MHz。 然后， 信号釆集卡 釆集电涡流探头 82的信号并将电涡流探头 82的信号输入计算机， 所述计算机对电涡流探 头 82的信号进行处理并记录膜厚值。 当完成一个测点 （i , j ) 的膜厚测量， 所述计算机对 电机驱动器发出指令，所述电机驱动器控制电机带动转台 20转动并在同一圆周的下一个测 点暂停， 完成该点的膜厚测量， 重复此步骤完成一个圆周内各个测点的膜厚测量。 当完成 一个圆周内的各测点膜厚测量后， 所述计算机对所述电机驱动器发出指令， 所述电机驱动 器控制直线单元 30中的直线电机或者导轨丝杠单元配合电机，通过滑块 32和悬臂 40将电 涡流探头 82步进到下一测量圆周， 继续测量， 直至得到待测工件 90全局的膜厚分布。 如图 3所示， 在测量结束后， 测头 80不工作， 电磁铁 33可以通电， 通过悬臂 40的旋 转将测头 80抬起， 直线单元 30往远离待测工件 90的方向移动， 使得测头 80离开待测工 件 90的表面， 便于待测工件 90的装卸。
在本说明书的描述中， 参考术语 "一个实施例"、 "一些实施例"、 "示例"、 "具体示 例"、 或 "一些示例" 等的描述意指结合该实施例或示例描述的具体特征、 结构、 材料或者 特点包含于本发明的至少一个实施例或示例中。 在本说明书中， 对上述术语的示意性表述 不一定指的是相同的实施例或示例。 而且， 描述的具体特征、 结构、 材料或者特点可以在 任何的一个或多个实施例或示例中以合适的方式结合。
尽管已经示出和描述了本发明的实施例， 本领域的普通技术人员可以理解： 在不脱离 本发明的原理和宗旨的情况下可以对这些实施例进行多种变化、 修改、 替换和变型， 本发 明的范围由权利要求及其等同物限定。

Claims

权利要求书
1、 一种全局金属膜厚度测量装置， 其特征在于， 包括：
底座；
转台， 所述转台包括定子部分和转子部分， 所述定子部分固定在所述底座上， 所述转 子部分上固定有工作台， 所述工作台内设有真空管路， 其中所述转子部分的旋转接头与所 述真空管路相连； 和
直线单元， 所述直线单元包括导轨和可沿所述导轨滑动的滑块， 其中所述导轨固定在 所述底座上， 所述滑块上固定连接有水平的悬臂， 所述悬臂的另一端设置有与所述工作台 的台面相对的测头， 所述测头内设有电涡流探头。
2、 根据权利要求 1所述的全局金属膜厚度测量装置， 其特征在于， 所述直线单元为直 线电机。
3、 根据权利要求 1所述的全局金属膜厚度测量装置， 其特征在于， 所述电涡流探头为 轴对称线圏。
4、 根据权利要求 1所述的全局金属膜厚度测量装置， 其特征在于， 所述电涡流探头由 信号发生器提供序列信号， 并由信号釆集卡釆集所述电涡流探头的信号。
5、 根据权利要求 4所述的全局金属膜厚度测量装置， 其特征在于， 所述信号发生器提 供频率为 lKHz、 2ΚΗζ、 4ΚΗζ、 8ΚΗζ、 16ΚΗζ、 32ΚΗζ、 64ΚΗζ、 128ΚΗζ、 512ΚΗζ、 1ΜΗζ、 2ΜΗζ、 4ΜΗζ、 8ΜΗζ或 16ΜΗζ的序列信号。
6、 一种全局金属膜厚度测量装置， 其特征在于， 包括：
底座；
转台， 所述转台包括定子部分和转子部分， 所述定子部分固定在所述底座上， 所述转 子部分上固定有工作台， 所述工作台内设有真空管路， 其中所述转子部分的旋转接头与所 述真空管路相连； 和
直线单元， 所述直线单元包括导轨和可沿所述导轨滑动的滑块， 所述导轨固定在所述 底座上， 所述滑块上铰接有悬臂且所述滑块上固定有电磁铁， 其中所述悬臂的一端的下方 固定有与所述电磁铁相对的铁块，所述悬臂的另一端设有与所述工作台的台面相对的测头， 所述测头内设有电涡流探头、 竖直的通气孔和竖直的节流孔， 所述通气孔和所述节流孔同 轴相连且贯通所述测头。
7、 根据权利要求 6所述的全局金属膜厚度测量装置， 其特征在于， 所述通气孔的孔径 大于所述节流孔的孔径。
8、 根据权利要求 6所述的全局金属膜厚度测量装置， 其特征在于， 所述电涡流探头为 轴对称线圏。
9、 根据权利要求 6所述的全局金属膜厚度测量装置， 其特征在于， 所述电涡流探头由 信号发生器提供序列信号， 并由信号釆集卡釆集所述电涡流探头的信号。
10、 根据权利要求 6所述的全局金属膜厚度测量装置， 其特征在于， 所述信号发生器 提供频率为 l KHz、 2KHz、 4KHz、 8KHz、 16KHz、 32KHz、 64KHz、 128KHz、 512KHz、 lMHz、 2MHz、 4MHz、 8MHz或 16MHz的序列信号。
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