CN106449454B - 晶圆表面铜层厚度多点测量系统 - Google Patents
晶圆表面铜层厚度多点测量系统 Download PDFInfo
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- CN106449454B CN106449454B CN201610875764.4A CN201610875764A CN106449454B CN 106449454 B CN106449454 B CN 106449454B CN 201610875764 A CN201610875764 A CN 201610875764A CN 106449454 B CN106449454 B CN 106449454B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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CN201610875764.4A CN106449454B (zh) | 2016-09-29 | 2016-09-29 | 晶圆表面铜层厚度多点测量系统 |
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CN201610875764.4A CN106449454B (zh) | 2016-09-29 | 2016-09-29 | 晶圆表面铜层厚度多点测量系统 |
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CN106449454A CN106449454A (zh) | 2017-02-22 |
CN106449454B true CN106449454B (zh) | 2019-12-20 |
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CN109668499B (zh) * | 2018-12-25 | 2021-11-02 | 铜陵精达新技术开发有限公司 | 一种线盘盘距变形自动检测装置及其检测方法 |
CN110044249B (zh) * | 2019-04-30 | 2020-09-15 | 清华大学 | 一种膜厚测量方法、系统及化学机械抛光装置 |
CN114290156B (zh) * | 2021-11-30 | 2023-05-09 | 浙江晶盛机电股份有限公司 | 硅片抛光过程中的测厚方法、系统及抛光装置 |
CN116255917B (zh) * | 2023-02-23 | 2023-08-29 | 泰微科技(珠海)有限公司 | 晶圆厚度测量方法及装置 |
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EP1573302A1 (en) * | 2002-12-13 | 2005-09-14 | Koninklijke Philips Electronics N.V. | Method and apparatus for measuring thickness of thin films via transient thermoreflectance |
CN102049733B (zh) * | 2010-07-26 | 2013-04-17 | 清华大学 | 电涡流金属膜厚度终点检测装置 |
CN102175133B (zh) * | 2011-02-25 | 2012-07-18 | 清华大学 | 全局金属膜厚度测量装置 |
US20120276662A1 (en) * | 2011-04-27 | 2012-11-01 | Iravani Hassan G | Eddy current monitoring of metal features |
CN103677832A (zh) * | 2013-12-13 | 2014-03-26 | 清华大学 | 晶圆铜膜厚度的绘图方法及系统 |
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Effective date of registration: 20171025 Address after: 100084 Beijing City, Haidian District Tsinghua Yuan Applicant after: TSINGHUA University Applicant after: HWATSING TECHNOLOGY Co.,Ltd. Address before: 300350, Tianjin City, Jinnan District Science and Technology Park, Hai Hing Road, No. 9, building No. 8 Applicant before: HWATSING TECHNOLOGY Co.,Ltd. Applicant before: Tsinghua University |
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Address after: 100084 Beijing City, Haidian District Tsinghua Yuan Co-patentee after: Huahaiqingke Co.,Ltd. Patentee after: TSINGHUA University Address before: 100084 Beijing City, Haidian District Tsinghua Yuan Co-patentee before: HWATSING TECHNOLOGY Co.,Ltd. Patentee before: TSINGHUA University |
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Granted publication date: 20191220 Termination date: 20210929 |
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CF01 | Termination of patent right due to non-payment of annual fee |