WO2012086959A2 - Photo-curable resin composition for printing process - Google Patents

Photo-curable resin composition for printing process Download PDF

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Publication number
WO2012086959A2
WO2012086959A2 PCT/KR2011/009635 KR2011009635W WO2012086959A2 WO 2012086959 A2 WO2012086959 A2 WO 2012086959A2 KR 2011009635 W KR2011009635 W KR 2011009635W WO 2012086959 A2 WO2012086959 A2 WO 2012086959A2
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WIPO (PCT)
Prior art keywords
resin composition
printing process
photocurable resin
acrylate
polysilazane
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PCT/KR2011/009635
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French (fr)
Korean (ko)
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WO2012086959A3 (en
Inventor
송준용
신승협
최미경
이광영
Original Assignee
주식회사 동진쎄미켐
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Priority claimed from KR1020110131502A external-priority patent/KR101917156B1/en
Application filed by 주식회사 동진쎄미켐 filed Critical 주식회사 동진쎄미켐
Publication of WO2012086959A2 publication Critical patent/WO2012086959A2/en
Publication of WO2012086959A3 publication Critical patent/WO2012086959A3/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0751Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Definitions

  • the present invention relates to photocurable resin compositions for printing processes useful for the production of micropatterns and protective films used in imprint lithography and roll printing processes.
  • the circuit line width or pattern line width is determined by the wavelength of light used in the exposure process.
  • photolithography processes are difficult to form fine patterns of 50 nm or less on a substrate because of light interference.
  • the initial investment costs increase due to expensive equipment such as exposure equipment, and the price of high-resolution masks soars, resulting in a decrease in efficiency. It is also acting as another factor.
  • the process takes a long time because the exposure, the post-exposure bake, the development, the post-development bake, the etching process, the cleaning process, and the like every time the pattern is formed, the productivity is increased because the photo process must be repeated several times. The problem of deterioration was highlighted.
  • Imprint lithography and roll printing techniques have emerged as a way to solve this problem.
  • Imprint lithography is the first method invented by Stephen chou of Princeton University in order to imprint nanoscale.
  • the fine pattern is formed by painting.
  • Mold polymer mold
  • Such an imprint method is disclosed in US Patent No. 5,772,905, US Patent No. 5,259,926, and Japanese Patent Publication No. 2007-244984 (Korean Patent Publication No. 10-2009-0031274).
  • Korean Patent Application No. 2006-0005482 discloses a roll printing apparatus and a manufacturing method of a display device using the same, and roll printing using one or more rolls.
  • the method is applicable to devices such as FED (Field Emission Display), OLED (Organic Light Electroluminescent Display), PDP (Plasma Display Panel), etc., and that the manufacturing process of the device will be simplified. It is disclosed that precision will be secured.
  • the roll printing method may form a fine pattern by using a plate, a roll, a roll, and the like on a roll instead of a high-resolution mask used when forming a pattern in conventional photolithography.
  • This roll printing method improves productivity and work efficiency through a simplified process.
  • it has been proposed as an alternative that can drastically reduce the complicated process that proceeds through various processes, such as exposure or development of photolithography and the resulting process costs.
  • Japanese Patent Laid-Open No. 2005-197699 discloses an imprint composition for semiconductor microlithography in connection with such a printing technique for pattern formation that can be performed at low cost.
  • Japanese Laid-Open Patent Publication No. 2005-301289 as a member of LCD or the like also discloses the application of photocurable printing lithography to a transparent protective film material, a spacer and the like.
  • Resists such as transparent protective films, spacers, and the like, disclosed in Japanese Patent Laid-Open No. 2005-301289 are called protective films (permanent films) because, unlike etching resists, materials are finally left.
  • This protective film unlike the etching resist, is an element left in the TFT display panel.
  • a transparent protective film is formed to protect the thin film transistor.
  • the conventional protective film (permanent film) is mostly formed through a photolithography process through a photoresist material.
  • a photocurable resin is coated on the color filter, the electrode lead portion is removed by photolithography, and a thermosetting process is performed to perform the protective film (permanent film).
  • the protective film (permanent film) for the color filter reduces the step between the color filters and enables resistance to high temperature processes in forming the transparent electrode (ITO).
  • thermosetting resins such as a siloxane polymer, a silicone polyimide, an epoxy resin, and an acrylic resin
  • a transparent protective film permanent film
  • the existing protective film formed silicon nitride (SiNx) on the metal and formed a protective film (permanent film) thereon.
  • SiNx silicon nitride
  • the role of the protective film is also increased. As the SiNx) formation process can be eliminated, there are many advantages in realizing low cost.
  • a resin composition on substrates of various materials such as inorganic layers such as Cu, SiNx, Mo, and film layers such as organic layers, PET, PES, etc.
  • inorganic layers such as Cu, SiNx, Mo
  • film layers such as organic layers, PET, PES, etc.
  • the metal material when the photocurable resin composition is formed on a substrate, depending on the type of metal patterned on the substrate at the time of performing a high temperature thermal process, the metal material may be modified due to oxidation and diffusion of the metal material. .
  • a metal material is copper.
  • a high temperature thermal process is performed during formation of a protective film (permanent film) on copper with a TFT electrode by using an imprint process, defects due to black spots and stains on the coating film are generated due to oxidation and diffusion of the copper layer. This defect is pointed out as the biggest problem in the process of forming an organic material on the copper layer.
  • the present invention can be applied to a variety of substrates such as plastic, metal, glass, such as excellent adhesiveness, durability against high temperature, high humidity and high pressure conditions, excellent permeability and heat resistance after high temperature treatment, And an object of the present invention is to provide a photocurable resin composition for a printing process with a low degree of modification of the lower film.
  • the present invention also provides a method for producing a protective film for a printing process using the photocurable resin composition and the method, which can stably and easily form fine patterns required for various electronic device industrial processes including semiconductors, displays, and the like. It is an object to provide a protective film.
  • crosslinkable monomers having at least two ethylenic double bonds
  • the present invention also provides a method for producing a protective film for a printing process comprising applying and exposing the photocurable resin composition to a substrate.
  • the present invention provides a protective film for a printing process produced by the manufacturing method.
  • the photocurable resin composition according to the present invention comprises a polysilazane compound
  • the protective film when the protective film is formed, compared with the coating film using the resin composition used in the conventional imprint lithography and roll printing process, the adhesive strength with the substrate, high transmittance even after high temperature treatment, It shows excellent performance as a protective film (permanent film) by simultaneously improving the durability, heat resistance, and prevention of underlayer film deterioration by high temperature processes in harsh conditions such as high temperature and high humidity.
  • Example 1 is an electron microscope photograph of a lower film before thermosetting a protective film prepared from the composition of Example 1 according to the present invention.
  • the photocurable resin composition for a printing process according to the present invention comprises a polysilazane compound for improving the adhesion, durability, permeability and heat resistance of the cured polymer resin, that is, the protective film, and preventing the underlayer of the composition. Characterized in that.
  • the photocurable resin composition for a printing process according to the present invention
  • the polysilazane compound used for this invention is not specifically limited, It can select arbitrarily unless the effect of this invention is impaired. These may be presented as either inorganic or organic compounds.
  • the amount of the polysilazane compound according to the present invention is preferably used in 1 to 60% by weight, preferably 10 to 40% by weight.
  • the amount of the polysilazane compound used is 1% by weight If less than, there is a tendency that the lower film denaturation prevention, adhesion and the like of the obtained thin film is lowered, and when it exceeds 60% by weight, printing characteristics may be deteriorated due to the increase in viscosity.
  • the polysilazane compound used in the present invention includes a linear structure having a structural unit represented by the following formula (1), has a molecular weight of 300 to 2,000, has 3 to 10 SiH 3 groups in one molecule, and is used for chemical analysis.
  • n is an integer.
  • the perhydropolysilazane may be prepared according to a conventional method in the art, for example, according to the method described in Japanese Patent Laid-Open No. 63-16325, and basically a chain portion in a molecule and It may be represented by the following formula (2) to include a cyclic moiety.
  • Preferred examples of the perhydropolysilazane include compounds having the structure of Formula 3 or 4 below.
  • R is One , R 2 And R 3
  • R Each independently represent a group in which a group directly connected to silicon, such as a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group or a fluoroalkyl group, is carbon, an alkylsilyl group, an alkylamino group, or an alkoxy group, n is an integer. (At this time, R One , R 2 And R 3 At least one of them is a hydrogen atom.)
  • polysilazane having a number average molecular weight of about 100 to 50,000 having a skeleton composed of the above structural units or a modified product thereof is included.
  • a method for producing polysilazane having a hydrogen atom in R 1 and R 2 and a methyl group in R 3 is described in D. Seyferth et al . Polym. Prepr. Am. Chem. Soc. Div. Polym. Chem. 25.10 (1984).
  • the polysilazane obtained by this method is a chain polymer and a cyclic polymer, and both do not have a crosslinked structure.
  • the polymer in the case of the polyorgano (hydro) silazane having a hydrogen atom at R 1 and R 2 and an organic group at R 3 , the polymer has a cyclic structure having a polymerization degree of 3 to 5, or a chain in the molecule. There is one having a structure and a ring structure at the same time.
  • the organic group in the polysilazane, and R 1 and R 2 having in the general formula (4) in the R 1 an organic group to a hydrogen atom, and R 2 and R 3, and R 3 is a polymerization degree having a hydrogen atom a 3-5 degree
  • polysilazanes having a cyclic structure There are also polysilazanes having a cyclic structure.
  • organic polysilazane other than the compound having the structure of Formula 4 polyorgano (hydro) silazane having a crosslinked structure of Formula 5 below, and R1SiX3 (X: halogen) obtained by ammonia decomposition
  • Polysilazane having a structure of formula (6) obtained by co-ammonia decomposition of polysilazane, R1Si (NH) X, or R1SiX3 having a crosslinked structure (see Japanese Patent Application Laid-Open No. 49-69717) Can be.
  • R 1 and R 2 each independently represent a hydrogen atom, an alkyl group, an alkenyl group or an aryl group, and m and n each independently represent an integer.
  • inorganic silazane copolymers or modified polysilazanes having increased molecular weight or improved hydrolysis resistance Japanese Patent Application Laid-Open No. H1-138108, H11-138107, H1-203429 and 1-203430
  • copolymerization silazane Japanese Patent Publication No. Hei 2-175726, Hei 5-86200, Hei 5-331293
  • Etc. may be included.
  • the polysilazane compounds presented above may be used alone or in combination of two or more thereof.
  • the amount of the ethylene monomer used is preferably 10 to 80% by weight, more preferably 20 to 60% by weight.
  • the amount of the ethylene-based monomer is less than 10% by weight, the obtained thin film molecular weight is not sufficient, and the strength tends to be lowered.
  • the amount of the ethylene monomer is more than 80% by weight, the unreacted material increases, which may cause shrinkage.
  • ethylene monomers are isobutyl acrylate, tert-butyl acrylate, lauryl acrylate, methyl methacrylate, alkyl acrylate, cyclohexyl acrylate, isobornyl acrylate, benzyl methacrylate, benzyl Acrylate, 2-hydroxyacrylate, trimethoxybutyl acrylate, ethylcarbidol acrylate, phenoxyethyl acrylate, 4-hydroxybutyl acrylate, phenoxypolyethylene glycol acrylate, 2-hydroxyethyl Acrylate, 2-hydroxypropyl acrylate, 2-acryloxyethyl-2-hydroxypropyl phthalate, 2-hydroxy-3-phenoxypropyl acrylate and methacrylates thereof; Acrylates including halogen compounds such as 3-fluoroethyl acrylate and 4-fluoropropyl acrylate and methacrylates thereof; Acrylates containing siloxane groups such as trifluoro
  • crosslinkable monomers having at least two ethylenic double bonds
  • the amount of the crosslinkable monomer having at least two or more ethylenic double bonds is preferably 10 to 80% by weight, more preferably 20 to 60% by weight. good.
  • the amount of the crosslinkable monomer is less than 10% by weight, the degree of curing is insufficient, which is detrimental to the pattern formation.
  • the amount of the crosslinkable monomer is greater than 80% by weight, the hardness is excessively high due to the increase of the degree of curing or rather, the unreacted substances are increased, causing the shrinkage. This can be
  • crosslinkable monomer examples include diethylene glycol monoethyl ether, dimethylol dicyclopentane diacrylate, 1,4-butanediol diacrylate, 1,3-butylene glycol diacrylate, and 1,6-hexanediol Diacrylate, aryloxy polyethylene glycol acrylate, dicyclopentenyl acrylate, hydroxy pivalate neopentyl glycol diacrylate, neopentyl glycol diacrylate, 1, 9-nonane diol diacrylate, polyethylene glycol diacryl Acrylate, sorbitol triacrylate, bisphenol A diacrylate derivative, trimethyl propane triacrylate, and methacrylates thereof, but are not limited thereto, and these may be used alone or in combination of two or more thereof.
  • EO modified glycerol triacrylate PO modified glycerol triacrylate, trimethylol propane triacrylate, pentaerythritol ethoxy tetraacrylate, dipentaerythritol hexa Acrylate, EO modified trimethylol propane triacrylate, and these methacrylates, etc. are mentioned, It is not limited to these, These can be used individually or in mixture of 2 or more types.
  • the amount of the photopolymerization initiator used is preferably from 0.1 to 12% by weight, more preferably from 0.5 to 8% by weight.
  • photopolymerization initiator examples include Irgacure 369, Igacure 907, Igacure184, Igacure 651, Igacure 819, Igacure 2959, Igacure 1800, Darocur 1173, Darocur 1116 and Darocur 1020; 2,2'-diethoxyacetophenone, 2,2'-dibutoxyacetophenone, 2-hydroxy-2-methylproriophenone, pt-butyltrichloroacetophenone, pt-butyldichloroacetophenone, benzophenone, 4-chloroacetophenone, 4,4'-dimethylaminobenzophenone, 4,4'-dichlorobenzophenone, 3,3'-dimethyl-2-methoxybenzophenone, 2,2'-dichloro-4-phenoxy Acetophenone, 2-methyl-1- (4- (methylthio) phenyl) -2-morpholinopropane-1
  • the photocurable resin composition of this invention may contain surfactant.
  • the surfactant may be used as long as it can improve the coating property of the photocurable resin composition, the amount of the surfactant used in the present invention is preferably 0.001 to 5% by weight, more preferably based on the total composition It is preferable to use 0.01 to 2% by weight. If two or more surfactants are used in combination, the total content is as indicated above.
  • the surfactant When the surfactant is contained in an amount of 0.001% by weight or less, uniform coating may be limited, and when 5% by weight or more may cause problems in mold transfer properties and formation of additional materials in a later process.
  • the said surfactant contains at least 1 type from silicone type and a fluorine type surfactant, It is also possible to mix and use 2 or more types.
  • the surfactant may include, but are not limited to, fluorine-based surfactants from Dainippon Ink Chemical Co., Ltd., 3M and Shin-Etsu Chemical Co., Ltd., and silicone-based surfactants from Dow, BK, and Evonik.
  • the photocurable resin composition of the present invention may further include a solvent.
  • a solvent is not used in the case of the photocurable resin composition for a printing process, but in the present invention, a solvent may be added for dissolution of polysilazane and compatibility with the photocurable resin composition.
  • the amount of the solvent is preferably 0 to 70% by weight, more preferably 0 to 50% by weight.
  • the solvent include acetonitrile, glycerol, dimethyl sulfoxide, nitromethane, dimethyl formamide, phenol, N-methylpyrrolidone, pyridine perfluorotributylamine, perfluoro decalin, 2-butanone, Alcohols such as methylene carbonate methanol, ethanol, ethylene glycol, triethylene glycol, tetraethylene glycol, propylene glycol, propylene ethylene glycol, diethylene glycol, butanediol, benzyl alcohol and hexyl alcohol; Ethers such as propylene carbonate, tetrahydrofuran, 1,4-dioxane, 1-methoxy-2-propanol, methoxybenzene, dibutyl ether and diphenol ether; Ethyl acetate, propyl acetate, butyl acetate, ethyl propion, ethyl ester, butyl ester,
  • the viscosity of the composition according to the invention is 2 mPa ⁇ s to 25 mPa ⁇ s at 25 ° C., preferably 3 mPa ⁇ s to 20 mPa ⁇ s, more preferably 5 mPa ⁇ s to 15 mPa ⁇ s to be.
  • composition viscosity of the present invention is 2 mPa ⁇ s or less, it is limited to the desired coating film thickness formation, and when the composition viscosity is 25 mPa ⁇ s or more, it may be difficult to apply the material to the substrate.
  • the present invention also provides a method for producing a protective film and a fine pattern for a printing process using the photocurable resin composition, and a protective film and a fine pattern produced by the method.
  • the method for producing a protective film for a printing process according to the present invention includes applying and exposing a photocurable composition according to the present invention to a substrate.
  • the composition after applying the composition to the substrate, by using an imprint lithography or roll printing process to form a coating film and exposed to it, it is possible to stably and easily fine patterns required for various electronic device industrial processes including semiconductors and displays Can be formed.
  • the composition is applied to a substrate (for example, silicon substrate, ceramic substrate, metal layer, polymer layer, etc.) by applying a suitable method such as spin coating, roller coating, slit, inkjet coating, etc. in a thickness of 0.5 to 10 ⁇ m It is preferable.
  • UV 190-450 nm
  • 200-400 nm area is used, and electron beam irradiation is also possible.
  • a high temperature heat treatment process may be subsequently performed to improve the use and properties of the film.
  • the protective film and the micropattern manufactured according to the present invention have excellent adhesion to a substrate, durability against high temperature, high humidity, and high pressure conditions, high permeability and heat resistance after high temperature treatment, and a low degree of modification of the lower layer, and thus include a semiconductor and a display.
  • the composition of the present invention is the imprint lithography and roll printing process using the conventional photolithography process by replacing the photolithography process for forming a fine pattern
  • the manufacturing process time can be shortened, thereby reducing manufacturing costs and improving productivity.
  • each of the photocurable compositions prepared above was applied on a degreasing-washed metal substrate with a thickness of 0.5 to 5 ⁇ m, bonded to a polymer mold and exposed using a lamp having a wavelength of 365 nm, and then formed thin film and polymer. The mold was released to form a protective film.
  • a photocurable composition and a protective film according to the present invention were prepared in the same manner as in Example 1, except that 10 parts by weight of polysilazane SN-1 having a structure of Formula 1 and a molecular weight of 500 was used.
  • a photocurable composition and a protective film were prepared in the same manner as in Example 1, except that 4-hydroxybutyl acrylate was used in an amount of 40 parts by weight without using polysilazane.
  • the protective film prepared in Examples 1 to 3, and Comparative Example 1 was measured for adhesion, durability, permeability, heat resistance, and lower film deterioration degree with respect to the substrate by the following method, and the results are shown in Table 1 below. It was.
  • the substrate on which the protective film was formed as described above was thermally cured in an oven at 230 ° C. for 30 minutes, and the adhesive strength was checked in the same manner as in the above a) to confirm 100% adhesion.
  • the substrate was treated at 120 ° C., 100% humidity, 2 atmospheres, and left for 24 hours in a device capable of high temperature, high pressure, and high humidity, and then the surface state and adhesion state of the substrate were rechecked. Evaluation was based on the same criteria.
  • the poor adhesive state means that the moisture penetrated into the coating film and the lower substrate and the lifting phenomenon occurred.
  • the substrate on which the protective film was formed was thermally cured in an oven at 230 ° C. for 150 minutes, and the substrate on which the coating film was formed was measured at 400 nm using a transmittance equipment, and evaluated according to the following criteria.
  • the weight loss was measured by a thermogravimetric analyzer (TGA) while thermally curing the substrate having the protective film formed thereon at 230 ° C. for 30 minutes in an oven, and evaluated according to the following criteria.
  • TGA thermogravimetric analyzer
  • Weight loss is more than 1% but less than 3%
  • Weight loss is more than 3% and less than 5%
  • the substrate on which the protective film was formed as described above was thermally cured in an oven at 230 ° C. for 150 minutes, and the substrate on which the coating film was formed was checked by visual inspection and SEM (Self-scanning microscope), and evaluated according to the following criteria. In addition, the SEM photograph is shown in Figs.
  • the photocurable resin composition according to the present invention comprises a polysilazane compound
  • the protective film when the protective film is formed, compared with the coating film using the resin composition used in the conventional imprint lithography and roll printing process, the adhesive strength with the substrate, high transmittance even after high temperature treatment, It shows excellent performance as a protective film (permanent film) by simultaneously improving the durability, heat resistance, and prevention of underlayer film deterioration by high temperature processes in harsh conditions such as high temperature and high humidity.

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Abstract

The present invention relates to a photo-curable resin composition for a printing process and more specifically to a photo-curable resin composition comprising a polysilazane compound. The composition according to the invention comprises the polysilazane compound, thereby ensuring an excellent adhesive force to a substrate, heat resistance, durability (against high temperature, high pressure, and high humidity) and lower layer protection property while maintaining high permeability even after high temperature treatment. Therefore, the photo-curable resin composition can be useful in the formation of a fine pattern and a protective layer.

Description

프린팅 프로세스용 광경화성 수지 조성물 Photocurable resin composition for printing process
본 발명은 임프린트 리소그래피 및 롤 프린트 공정에 사용되는 미세패턴 및 보호막의 제조에 유용한 프린팅 프로세스용 광경화성 수지 조성물에 관한 것이다.The present invention relates to photocurable resin compositions for printing processes useful for the production of micropatterns and protective films used in imprint lithography and roll printing processes.
일반적으로 정보저장, 소형 센서, 광결정 및 광학 소자, 미세 전자기계 소자, 표시 소자, 디스플레이 및 반도체에 적용되는 미세 패턴을 형성하는 공정은 빛을 이용하여 미세 패턴을 형성하는 포토리소그래피 (photolithography)를 이용한 방법이다.In general, the process of forming a fine pattern applied to information storage, small sensor, photonic crystal and optical device, microelectromechanical device, display device, display and semiconductor using photolithography to form a fine pattern using light It is a way.
종래 포토리소그래피 방법은 노광 공정에 사용되는 빛의 파장에 의해 회로 선폭 또는 패턴 선폭이 결정된다. 현재의 기술 수준을 고려할 때 포토리소그래피 공정은 빛의 간섭 때문에 50 ㎚ 이하의 미세 패턴을 기판 상에 형성하는 것은 어려운 상황이다. 또한, 패턴의 초미세화가 진행됨에 따라 노광 장비와 같이 고가의 장비로 인하여 초기 투자비용이 증가하고 고해상도의 마스크 가격도 급등하여 효율성이 떨어지는 단점이 있으며, 고가의 장비를 사용해야 하는 문제점은 결국 원가 상승을 일으키는 또 다른 요인으로 작용하고 있다.In the conventional photolithography method, the circuit line width or pattern line width is determined by the wavelength of light used in the exposure process. Given the current state of the art, photolithography processes are difficult to form fine patterns of 50 nm or less on a substrate because of light interference. In addition, as the pattern becomes very fine, the initial investment costs increase due to expensive equipment such as exposure equipment, and the price of high-resolution masks soars, resulting in a decrease in efficiency. It is also acting as another factor.
뿐만 아니라, 패턴을 형성할 때마다 노광, 노광 후 베이크, 현상, 현상 후 베이크, 식각 공정, 세정 공정 등을 수행해야만 하기 때문에 공정 시간이 오래 걸리고, 여러 차례의 포토 공정을 반복해야만 하기 때문에 생산성이 저하되는 문제점이 부각되었다. In addition, the process takes a long time because the exposure, the post-exposure bake, the development, the post-development bake, the etching process, the cleaning process, and the like every time the pattern is formed, the productivity is increased because the photo process must be repeated several times. The problem of deterioration was highlighted.
이러한 문제를 해결할 수 있는 방법으로 임프린트 리소그래피 및 롤 프린트 공법이 대두되었다. 임프린트 리소그래피는 나노 스케일을 각인하기 위해 미국 프린스턴 대학교의 스테판 쵸우 (Stephen chou) 등에 의해 최초로 발명된 방법으로 상대적으로 강도가 강한 무기물 또는 고분자의 표면에 필요로 하는 형상을 미리 제작하여, 이를 다른 물질 위에 도장 찍는 듯이 하여 미세 패턴을 형성하는 것이다. 구체적으로, 원하는 미세 패턴을 미리 형성시킨 무기물 또는 고분자 몰드 (Mold)를 사용하여 금속막 또는 유기막 위에 코팅된 경화성 조성물에 합착하고 열 또는 광경화시켜 패턴을 형성하는 공법으로 기존 포토리소그래피 방법에 비해서 공정 단순화 및 미세 패턴 형성에 유리한 이점이 있다. 이러한 임프린트 공법은 미국특허 제5,772,905호, 미국특허 제5,259,926호, 일본특허공보 제2007-244984호 (대한민국공개특허공보 제10-2009-0031274호)에 기술이 개시되어 있다.Imprint lithography and roll printing techniques have emerged as a way to solve this problem. Imprint lithography is the first method invented by Stephen chou of Princeton University in order to imprint nanoscale. The fine pattern is formed by painting. Specifically, a method of forming a pattern by bonding to a curable composition coated on a metal film or an organic film using an inorganic material or a polymer mold (Mold) in which a desired fine pattern is formed in advance, and forming a pattern by heat or photocuring, as compared with the conventional photolithography method. There is an advantage to simplify the process and to form a fine pattern. Such an imprint method is disclosed in US Patent No. 5,772,905, US Patent No. 5,259,926, and Japanese Patent Publication No. 2007-244984 (Korean Patent Publication No. 10-2009-0031274).
또한, 대한민국특허출원 제2006-0005482호(공개특허공보 제10-2007-76292호)는 롤 프린트 장치 및 이를 이용한 표시 장치의 제조방법에 대하여 개시하고 있으며, 한 개 또는 그 이상의 롤을 이용하는 롤 프린트 공법은 FED(Field Emission Display), OLED(Organic Light Electroluminescent Display), PDP(Plasma Display Panel) 등의 장치에도 적용이 가능하고 상기 장치의 제조 공정이 단순해 질 것이라고 언급하고 있고, 반복 인쇄 후에도 패턴의 정밀도가 확보될 것이라 개시하고 있다.In addition, Korean Patent Application No. 2006-0005482 (Publication Patent Publication No. 10-2007-76292) discloses a roll printing apparatus and a manufacturing method of a display device using the same, and roll printing using one or more rolls. The method is applicable to devices such as FED (Field Emission Display), OLED (Organic Light Electroluminescent Display), PDP (Plasma Display Panel), etc., and that the manufacturing process of the device will be simplified. It is disclosed that precision will be secured.
상기 롤 프린트 공법은 기존의 포토리소그래피에서 패턴을 형성시킬 때 사용되는 고해상도의 마스크 대신 롤에서 플레이트, 롤과 롤 등을 이용하여 미세 패턴을 형성할 수 있다. 이러한 롤 프린팅 공법은, 공정의 단순화를 통해서 생산성 및 작업 능률을 향상시켰다. 또한, 포토리소그래피의 노광이나 현상 작업과 같은 여러 공정을 거치면서 진행되는 복잡한 공정 및 그에 따라서 발생하는 부수적인 공정 비용을 획기적으로 줄일 수 있는 대안으로 제시되고 있다.The roll printing method may form a fine pattern by using a plate, a roll, a roll, and the like on a roll instead of a high-resolution mask used when forming a pattern in conventional photolithography. This roll printing method improves productivity and work efficiency through a simplified process. In addition, it has been proposed as an alternative that can drastically reduce the complicated process that proceeds through various processes, such as exposure or development of photolithography and the resulting process costs.
이러한, 저비용으로 수행할 수 있는 패턴 형성용 프린팅 기술과 관련하여 일본공개특허공보 2005-197699호에는 반도체 마이크로 리소그래피용 임프린트 조성물이 개시되어 있다. 또한, LCD 등의 부재로서 일본공개특허공보 2005-301289호에는 투명 보호막재료, 스페이서 등에 대한 광경화형 프린팅 리소그래피의 응용도 개시되어 있다. 일본공개특허공보 2005-301289호에서 개시된, 투명 보호막, 스페이서 등의 레지스트는 에칭 레지스트와 달리, 최종적으로 재료가 남기 때문에 보호막(영구막)이라고 불리우고 있다.Japanese Patent Laid-Open No. 2005-197699 discloses an imprint composition for semiconductor microlithography in connection with such a printing technique for pattern formation that can be performed at low cost. Further, Japanese Laid-Open Patent Publication No. 2005-301289 as a member of LCD or the like also discloses the application of photocurable printing lithography to a transparent protective film material, a spacer and the like. Resists such as transparent protective films, spacers, and the like, disclosed in Japanese Patent Laid-Open No. 2005-301289, are called protective films (permanent films) because, unlike etching resists, materials are finally left.
이러한 보호막(영구막)은 에칭 레지스트와 달리, TFT 디스플레이 패널에 남겨지는 요소이다. TFT 기판의 경우, 박막트랜지스터 보호를 위해 투명한 보호막을 형성한다. 종래의 보호막(영구막)은 포토레지스트 재료를 통한 포토 리소그래피 공정을 통해 대부분 형성되어 지고 있다. 이와 마찬가지로, LCD 상판에서도 컬러필터 형성 후에 형성되는 보호막(영구막)의 경우에는 컬러필터 상에 광경화성 수지를 도포하고, 전극 인출부를 포토리소그래피에 의해 제거, 열경화 공정을 실시하여 보호막(영구막)을 형성한다. 컬러필터용 보호막(영구막)은 컬러 필터간의 단차를 줄이고 투명전극(ITO) 형성시에 고온공정에 대한 내성을 가능하게 한다.This protective film (permanent film), unlike the etching resist, is an element left in the TFT display panel. In the case of a TFT substrate, a transparent protective film is formed to protect the thin film transistor. The conventional protective film (permanent film) is mostly formed through a photolithography process through a photoresist material. Similarly, in the case of the protective film (permanent film) formed after the color filter is formed on the LCD top plate, a photocurable resin is coated on the color filter, the electrode lead portion is removed by photolithography, and a thermosetting process is performed to perform the protective film (permanent film). ). The protective film (permanent film) for the color filter reduces the step between the color filters and enables resistance to high temperature processes in forming the transparent electrode (ITO).
종래, 컬러필터용 투명 보호막(영구막)으로는 실록산폴리머, 실리콘 폴리이미드, 에폭시수지, 아크릴수지 등의 광경화성 수지나 열경화성 수지가 사용되어 왔다.Conventionally, photocurable resins and thermosetting resins, such as a siloxane polymer, a silicone polyimide, an epoxy resin, and an acrylic resin, have been used as a transparent protective film (permanent film) for color filters.
또한, 기존의 보호막(영구막)은 메탈 위에 실리콘나이트라이드(SiNx)를 형성하고 그 위에 보호막(영구막)을 형성하였다. 그러나, 실리콘나이트라이드 프리 (SiNx free) 공정 수행을 위해서는, 메탈 위에 직접적으로 광경화성 수지 조성물을 형성하여야 하기 때문에 보호막의 역할도 그 만큼 커지게 되는 것이며, 이러한 공정 수행은 증착으로 이루어지는 실리콘나이트라이드 (SiNx) 형성 공정을 제거할 수 있게 됨에 따라, 저비용 실현에 많은 이점을 가지게 된다.In addition, the existing protective film (permanent film) formed silicon nitride (SiNx) on the metal and formed a protective film (permanent film) thereon. However, in order to perform the silicon nitride free (SiNx free) process, since the photocurable resin composition must be formed directly on the metal, the role of the protective film is also increased. As the SiNx) formation process can be eliminated, there are many advantages in realizing low cost.
임프린트 및 롤 프린트 공정을 통한 미세패턴 및 보호막(영구막) 형성에 있어서, Cu, SiNx, Mo 등과 같은 무기물층 및 유기물층, PET, PES 등의 필름층과 같이 다양한 재료의 기판(substrate)에 수지 조성물을 도포하여 광경화시킨 후에 형성된 도막의 하부기판에 대한 접착력은 필수적이다. In the formation of a fine pattern and a protective film (permanent film) through the imprint and roll printing process, a resin composition on substrates of various materials such as inorganic layers such as Cu, SiNx, Mo, and film layers such as organic layers, PET, PES, etc. The adhesion to the lower substrate of the coating film formed after coating and photocuring is essential.
또한, 광경화성 수지 조성물을 기판 위에 형성할 경우, 고온의 열공정 수행시에 기판에 패터닝 되어있는 금속의 종류에 따라, 금속재료의 산화 및 확산(diffusion) 등에 의한 금속재료의 변성을 초래하기도 한다. 이러한 금속재료 중에 대표적인 것으로는 구리가 있다. 임프린트 공정을 이용하여 TFT 전극으로 구리 위에 보호막(영구막) 형성시에 고온의 열공정을 실시하면, 구리층의 산화 및 확산으로 인하여 도막에 흑점 및 얼룩 현상으로 인한 불량이 발생하게 된다. 이러한 불량은 구리층 위에 유기물 재료를 형성하여 공정을 진행하는데 있어서 가장 큰 문제점으로 지적되고 있다. In addition, when the photocurable resin composition is formed on a substrate, depending on the type of metal patterned on the substrate at the time of performing a high temperature thermal process, the metal material may be modified due to oxidation and diffusion of the metal material. . Representative of such a metal material is copper. When a high temperature thermal process is performed during formation of a protective film (permanent film) on copper with a TFT electrode by using an imprint process, defects due to black spots and stains on the coating film are generated due to oxidation and diffusion of the copper layer. This defect is pointed out as the biggest problem in the process of forming an organic material on the copper layer.
보호막(영구막)으로서 주요한 기술 과제는 접착력, 고온 처리 후 투과도, 기계적 특성의 우수성, 내화학성, 아웃가스(Outgas) 저감 등 많은 과제가 수행되어야 한다. 그러나, 유기물 재료는 온도, 압력, 수분, 경도 등 많은 한계성을 보이고 있으면 이런 한계성 때문에 재료 사용에도 일부 제약이 따르고 있기 때문에 아직까지 상기 조건을 만족시킬 수 있는 수지 조성물은 좀처럼 제시 되고 있지 않았다. 또한, 실리콘나이트라이드 프리(SiNx free) 용도로 적용될 수 있는 코팅용 수지 조성물의 경우에는 하부막 재료의 변성 및 재료 물성의 한계성 등에 대한 이유로 더더욱 제시 되고 있지 않은 것이 현실이다. As a protective film (permanent film), the main technical problems must be carried out, such as adhesiveness, permeability after high temperature treatment, excellence in mechanical properties, chemical resistance, and outgas reduction. However, since organic materials have many limitations such as temperature, pressure, moisture, and hardness, some limitations are imposed on the use of materials due to these limitations. Thus, resin compositions that can satisfy the above conditions have not been readily presented. In addition, in the case of the coating resin composition that can be applied to the silicon nitride free (SiNx free), the reality is not presented even more for reasons of the modification of the underlying film material and the limitation of material properties.
상기와 같은 문제점을 해결하기 위해, 본 발명은 접착성이 우수하여 플라스틱, 금속, 유리 등의 다양한 기재에 적용될 수 있고, 고온, 고습 및 고압 조건에 대한 내구성, 고온 처리 후의 투과도 및 내열성이 우수하며, 하부막의 변성 정도가 적은 프린팅 프로세스용 광경화성 수지 조성물을 제공하는 것을 목적으로 한다.In order to solve the problems as described above, the present invention can be applied to a variety of substrates such as plastic, metal, glass, such as excellent adhesiveness, durability against high temperature, high humidity and high pressure conditions, excellent permeability and heat resistance after high temperature treatment, And an object of the present invention is to provide a photocurable resin composition for a printing process with a low degree of modification of the lower film.
본 발명은 또한, 반도체, 디스플레이 등을 포함한 각종 전자 디바이스 산업 공정에 필요한 미세패턴을 안정적이고 용이하게 형성할 수 있는, 상기 광경화성 수지 조성물을 이용한 프린팅 프로세스용 보호막의 제조방법 및 상기 방법에 의해 제조된 보호막을 제공하는 것을 목적으로 한다.The present invention also provides a method for producing a protective film for a printing process using the photocurable resin composition and the method, which can stably and easily form fine patterns required for various electronic device industrial processes including semiconductors, displays, and the like. It is an object to provide a protective film.
상기 목적을 달성하기 위하여, 본 발명은 In order to achieve the above object, the present invention
(1) 폴리실라잔 화합물; (1) polysilazane compounds;
(2) 에틸렌계 단량체; (2) ethylene monomers;
(3) 적어도 2개 이상의 에틸렌계 이중결합을 갖는 가교성 단량체;(3) crosslinkable monomers having at least two ethylenic double bonds;
(4) 광중합 개시제; 및(4) photopolymerization initiators; And
(5) 계면활성제를 포함하는 프린팅 프로세스용 광경화성 수지 조성물을 제공한다.(5) It provides the photocurable resin composition for printing processes containing surfactant.
본 발명은 또한, 기판에 상기 광경화형 수지 조성물을 도포하고 노광시키는 단계를 포함하는 프린팅 프로세스용 보호막의 제조방법을 제공한다.The present invention also provides a method for producing a protective film for a printing process comprising applying and exposing the photocurable resin composition to a substrate.
또한, 본 발명은 상기 제조방법에 의하여 제조된 프린팅 프로세스용 보호막을 제공한다.In addition, the present invention provides a protective film for a printing process produced by the manufacturing method.
본 발명에 따른 광경화형 수지 조성물은 폴리실라잔 화합물을 포함함으로써, 보호막 형성시, 기존 임프린트 리소그래피 및 롤 프린트 공정에 사용되는 수지 조성물을 이용한 도막에 비해 기판과의 접착력, 고온처리 후에도 높은 투과도 유지, 고온, 고습 등 가혹한 조건에서의 내구성, 내열성 및 고온공정에 의한 하부막 변성 방지 등을 동시에 개선시킴으로 보호막(영구막)으로서의 우수한 성능을 나타낸다.Since the photocurable resin composition according to the present invention comprises a polysilazane compound, when the protective film is formed, compared with the coating film using the resin composition used in the conventional imprint lithography and roll printing process, the adhesive strength with the substrate, high transmittance even after high temperature treatment, It shows excellent performance as a protective film (permanent film) by simultaneously improving the durability, heat resistance, and prevention of underlayer film deterioration by high temperature processes in harsh conditions such as high temperature and high humidity.
도 1은 본 발명에 따른 실시예 1의 조성물로 제조된 보호막을 열경화시키기 전의 하부막에 대한 전자 현미경 관찰 사진이다. 1 is an electron microscope photograph of a lower film before thermosetting a protective film prepared from the composition of Example 1 according to the present invention.
도 2 내지 5는 각각 실시예 1 내지 3 및 비교예 1의 조성물로 제조된 보호막을 열경화시킨 후 하부막의 변성 정도를 전자 현미경으로 관찰한 사진이다.2 to 5 are photographs of the degree of denaturation of the lower layer after thermosetting the protective film made of the compositions of Examples 1 to 3 and Comparative Example 1, respectively, with an electron microscope.
본 발명에 따른 프린팅 프로세스용 광경화성 수지 조성물은 상기 조성물의 경화된 고분자 수지, 즉 보호막의 접착성, 내구성, 고온 처리 후의 투과도 및 내열성을 향상시키고 하부막의 변성을 방지하기 위하여 폴리실라잔 화합물을 포함하는 것을 특징으로 한다. The photocurable resin composition for a printing process according to the present invention comprises a polysilazane compound for improving the adhesion, durability, permeability and heat resistance of the cured polymer resin, that is, the protective film, and preventing the underlayer of the composition. Characterized in that.
구체적으로, 본 발명에 따른 프린팅 프로세스용 광경화성 수지 조성물은,Specifically, the photocurable resin composition for a printing process according to the present invention,
(1) 폴리실라잔 화합물 1 내지 60 중량%; (1) 1 to 60 weight percent of a polysilazane compound;
(2) 에틸렌계 단량체 10 내지 80 중량%; (2) 10 to 80 wt% of an ethylene monomer;
(3) 적어도 2개 이상의 에틸렌계 이중결합을 갖는 가교성 단량체 10 내지 80 중량%;(3) 10 to 80% by weight of a crosslinkable monomer having at least two or more ethylenic double bonds;
(4) 광중합 개시제 0.1 내지 12 중량%; 및(4) 0.1 to 12 wt% of a photopolymerization initiator; And
(5) 계면활성제 0.001 내지 5 중량%를 포함한다.(5) 0.001 to 5% by weight of surfactant.
이하 각 성분들에 대하여 설명한다.Each component is demonstrated below.
(1) 폴리실라잔 화합물(1) polysilazane compound
본 발명에 사용되는 폴리실라잔 화합물은 특별히 한정하지 않고, 본 발명의 효과를 저해하지 않는 한 임의로 선택할 수 있다. 이들은 무기화합물 또는 유기화합물 중 어느 것으로도 제시될 수 있다.The polysilazane compound used for this invention is not specifically limited, It can select arbitrarily unless the effect of this invention is impaired. These may be presented as either inorganic or organic compounds.
본 발명에 따른 폴리실라잔 화합물의 사용량은 1 내지 60 중량%, 바람직하게는 10 내지 40 중량%로 사용하는 것이 좋다. The amount of the polysilazane compound according to the present invention is preferably used in 1 to 60% by weight, preferably 10 to 40% by weight.
상기 폴리실라잔 화합물의 사용량이 1 중량% 미만인 경우에는 얻어지는 박막의 하부막 변성방지 및 접착력 등이 저하되는 경향이 있으며, 60 중량%를 초과하는 경우에는, 점도의 증가로 인하여 프린팅 특성이 나빠지는 원인이 될 수 있다.The amount of the polysilazane compound used is 1% by weight If less than, there is a tendency that the lower film denaturation prevention, adhesion and the like of the obtained thin film is lowered, and when it exceeds 60% by weight, printing characteristics may be deteriorated due to the increase in viscosity.
본 발명에 사용되는 폴리실라잔 화합물은, 하기 화학식 1의 구조 단위를 갖는 직사슬형 구조를 포함하고, 300 내지 2,000의 분자량을 갖고, 1분자 중에 3 내지 10개의 SiH3 기를 갖고, 화학분석에 의한 원소 비율이 각 중량%당 Si:59~62, N: 31~34 및 H: 6.5~7.5인 퍼하이드로폴리실라잔, 및 폴리스티렌 환산 평균 분자량이 2,000 내지 20,000의 범위에 있는 퍼하이드로폴리실라잔이 바람직하다.The polysilazane compound used in the present invention includes a linear structure having a structural unit represented by the following formula (1), has a molecular weight of 300 to 2,000, has 3 to 10 SiH 3 groups in one molecule, and is used for chemical analysis. Perhydropolysilazane having an element ratio of Si: 59-62, N: 31-34, and H: 6.5-7.5 per weight% by weight, and perhydropolysilazane having a polystyrene reduced average molecular weight in the range of 2,000 to 20,000. This is preferred.
[화학식 1][Formula 1]
Figure PCTKR2011009635-appb-I000001
Figure PCTKR2011009635-appb-I000001
상기 식에서 n은 정수이다.Wherein n is an integer.
상기 퍼하이드로폴리실라잔은 당분야의 통상의 방법에 따라 제조될 수 있으며, 예를 들어 일본특허공개 소63-16325호에 기재된 방법에 따라 제조될 수 있고, 기본적으로는 분자 내에 사슬형 부분과 고리형 부분을 포함하는 것으로, 하기 화학식 2로 나타낼 수 있다.The perhydropolysilazane may be prepared according to a conventional method in the art, for example, according to the method described in Japanese Patent Laid-Open No. 63-16325, and basically a chain portion in a molecule and It may be represented by the following formula (2) to include a cyclic moiety.
[화학식 2][Formula 2]
Figure PCTKR2011009635-appb-I000002
Figure PCTKR2011009635-appb-I000002
상기 퍼하이드로폴리실라잔의 바람직한 예로는 하기 화학식 3 또는 4의 구조를 갖는 화합물을 들 수 있다.Preferred examples of the perhydropolysilazane include compounds having the structure of Formula 3 or 4 below.
[화학식 3][Formula 3]
Figure PCTKR2011009635-appb-I000003
Figure PCTKR2011009635-appb-I000003
[화학식 4][Formula 4]
Figure PCTKR2011009635-appb-I000004
Figure PCTKR2011009635-appb-I000004
상기 식에서, R1, R2 및 R3는 각각 독립적으로 수소원자, 알킬기, 알케닐기, 시클로알킬기, 아릴기, 플루오르알킬기 등 규소에 직결하는 기가 탄소인 기, 알킬실릴기, 알킬아미노기, 및 알콕시기를 나타내며, n은 정수이다. (이때, R1, R2 및 R3 중 적어도 1개는 수소원자이다.) In which R isOne, R2 And R3Each independently represent a group in which a group directly connected to silicon, such as a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group or a fluoroalkyl group, is carbon, an alkylsilyl group, an alkylamino group, or an alkoxy group, n is an integer. (At this time, ROne, R2 And R3 At least one of them is a hydrogen atom.)
본 발명에서는 상기와 같은 구조 단위로 이루어지는 골격을 갖는 수평균 분자량이 약 100 내지 50,000인 폴리실라잔 또는 그 변성물을 포함한다. In the present invention, polysilazane having a number average molecular weight of about 100 to 50,000 having a skeleton composed of the above structural units or a modified product thereof is included.
상기 화학식 4의 구조를 포함하는 바람직한 화합물의 예로서, R1 및 R2에 수소원자, 및 R3에 메틸기를 갖는 폴리실라잔의 제조 방법은 문헌[D. Seyferth등 Polym. Prepr. Am. Chem.Soc. Div. Polym. Chem. 25.10(1984)]에 보고되어 있다. 이 방법에 의해 얻어지는 폴리실라잔은 사슬형 폴리머와 고리형 폴리머이고, 모두 가교 구조를 갖지 않는다.As an example of a preferable compound including the structure of Formula 4, a method for producing polysilazane having a hydrogen atom in R 1 and R 2 and a methyl group in R 3 is described in D. Seyferth et al . Polym. Prepr. Am. Chem. Soc. Div. Polym. Chem. 25.10 (1984). The polysilazane obtained by this method is a chain polymer and a cyclic polymer, and both do not have a crosslinked structure.
또한, 상기 화학식 4에서 R1 및 R2에 수소원자, 및 R3에 유기기를 갖는 폴리오가노(하이드로)실라잔의 경우에는, 주로 중합도가 3 내지 5인 고리형 구조를 갖는 것이나, 분자 내에 사슬형 구조와 고리형 구조를 동시에 갖는 것이 있다.In the formula (4), in the case of the polyorgano (hydro) silazane having a hydrogen atom at R 1 and R 2 and an organic group at R 3 , the polymer has a cyclic structure having a polymerization degree of 3 to 5, or a chain in the molecule. There is one having a structure and a ring structure at the same time.
또한, 상기 화학식 4에서 R1에 수소원자, 및 R2 및 R3에 유기기를 갖는 폴리실라잔과 R1 및 R2에 유기기, 및 R3에 수소 원자를 갖는 중합도가 3~5정도인 고리형 구조를 갖는 폴리실라잔도 있다.In addition, the organic group in the polysilazane, and R 1 and R 2 having in the general formula (4) in the R 1 an organic group to a hydrogen atom, and R 2 and R 3, and R 3 is a polymerization degree having a hydrogen atom a 3-5 degree There are also polysilazanes having a cyclic structure.
본 발명에서는 또한 상기 화학식 4의 구조를 갖는 화합물 이외의 유기 폴리실라잔으로서 하기 화학식 5의 가교 구조를 분자 내에 갖는 폴리오가노(하이드로)실라잔, 및 R1SiX3 (X:할로겐)의 암모니아 분해에 의해 얻어지는 가교 구조를 갖는 폴리실라잔, R1Si(NH)X, 또는 R1SiX3의 공(共)암모니아 분해에 의해 얻어지는 하기 화학식 6의 구조를 갖는 폴리실라잔 (일본특허공개 소49-69717호 참조)을 포함할 수 있다. In the present invention, as an organic polysilazane other than the compound having the structure of Formula 4, polyorgano (hydro) silazane having a crosslinked structure of Formula 5 below, and R1SiX3 (X: halogen) obtained by ammonia decomposition Polysilazane having a structure of formula (6) obtained by co-ammonia decomposition of polysilazane, R1Si (NH) X, or R1SiX3 having a crosslinked structure (see Japanese Patent Application Laid-Open No. 49-69717) Can be.
[화학식 5][Formula 5]
Figure PCTKR2011009635-appb-I000005
Figure PCTKR2011009635-appb-I000005
[화학식 6][Formula 6]
Figure PCTKR2011009635-appb-I000006
Figure PCTKR2011009635-appb-I000006
상기 식에서 R1 및 R2는 각각 독립적으로 수소원자, 알킬기, 알케닐기 또는 아릴기를 나타내며, m 및 n은 각각 독립적으로 정수이다.In the above formula, R 1 and R 2 each independently represent a hydrogen atom, an alkyl group, an alkenyl group or an aryl group, and m and n each independently represent an integer.
또한, 상기 화합물들 외에 분자량을 증가시키거나 내가수분해성을 향상시킨 무기실라잔 공중합체나 개질 폴리실라잔(일본특허공개 평1-138108호, 평1-138107호, 평1-203429호 및 평1-203430호 참조)도 포함할 수 있으며, 폴리실라잔에 유기 성분을 도입한 후막화에 유리한 공중합 실라잔(일본특허공개 평2-175726호, 평5-86200호, 평5-331293호 및 평3-31326호 참조)등도 포함할 수 있다.In addition to the above compounds, inorganic silazane copolymers or modified polysilazanes having increased molecular weight or improved hydrolysis resistance (Japanese Patent Application Laid-Open No. H1-138108, H11-138107, H1-203429 and 1-203430), copolymerization silazane (Japanese Patent Publication No. Hei 2-175726, Hei 5-86200, Hei 5-331293), which is advantageous for the thickening of the organic component into polysilazane. Etc.) may be included.
상기에 제시된 폴리실라잔 화합물은 단독 또는 2종 이상 혼합하여 사용할 수 있다.The polysilazane compounds presented above may be used alone or in combination of two or more thereof.
(2) 에틸렌계 단량체(2) ethylene monomer
본 발명의 광경화성 수지 조성물에 있어서, 에틸렌계 단량체의 사용량은 10 내지 80 중량%로 사용하는 것이 바람직하며, 더욱 바람직하게는 20 내지 60 중량%로 사용하는 것이 좋다. In the photocurable resin composition of the present invention, the amount of the ethylene monomer used is preferably 10 to 80% by weight, more preferably 20 to 60% by weight.
상기 에틸렌계 단량체의 사용량이 10 중량% 미만인 경우는 얻어지는 박막 분자량이 충분하지 않아 강도가 저하되는 경향에 있으며, 80 중량%를 초과하는 경우는 미반응물이 많아져 수축의 원인이 될 수 있다. When the amount of the ethylene-based monomer is less than 10% by weight, the obtained thin film molecular weight is not sufficient, and the strength tends to be lowered. When the amount of the ethylene monomer is more than 80% by weight, the unreacted material increases, which may cause shrinkage.
상기 에틸렌계 단량체의 구체적인 예로는, 이소부틸아크릴레이트, tert-부틸아크릴레이트, 라우릴아크릴레이트, 메틸메타크릴레이트, 알킬아크릴레이트, 시클로헥실아크릴레이트, 이소보닐아크릴레이트, 벤질메타크릴레이트, 벤질아크릴레이트, 2-히드록시아크릴레이트, 트리메톡시부틸아크릴레이트, 에틸카르비돌아크릴레이트, 페녹시에틸아크릴레이트, 4-히드록시부틸아크릴레이트, 페녹시폴리에틸렌글리콜아크릴레이트, 2-히드록시에틸아크릴레이트, 2-히드록시프로필아크릴레이트, 2-아크릴옥시에틸-2-히드록시프로필프탈레이트, 2-히드록시-3-페녹시프로필아크릴레이트 및 이들의 메타크릴레이트류; 3-플루오로에틸아크릴레이트, 4-플루오로프로필아크릴레이트와 같은 할로겐화합물을 포함하는 아크릴레이트 및 이들의 메타크릴레이트류; 트리에틸실록실에틸아크릴레이트와 같은 실록산기를 포함하는 아크릴레이트 및 이들의 메타크릴레이트류; 및 스티렌 및 4-메톡시스티렌과 같은 방향족을 갖는 올레핀류 등을 들 수 있으나 이에 한정되지는 않으며, 이들은 단독 또는 2 종 이상 혼합 사용할 수 있다.Specific examples of the ethylene monomers are isobutyl acrylate, tert-butyl acrylate, lauryl acrylate, methyl methacrylate, alkyl acrylate, cyclohexyl acrylate, isobornyl acrylate, benzyl methacrylate, benzyl Acrylate, 2-hydroxyacrylate, trimethoxybutyl acrylate, ethylcarbidol acrylate, phenoxyethyl acrylate, 4-hydroxybutyl acrylate, phenoxypolyethylene glycol acrylate, 2-hydroxyethyl Acrylate, 2-hydroxypropyl acrylate, 2-acryloxyethyl-2-hydroxypropyl phthalate, 2-hydroxy-3-phenoxypropyl acrylate and methacrylates thereof; Acrylates including halogen compounds such as 3-fluoroethyl acrylate and 4-fluoropropyl acrylate and methacrylates thereof; Acrylates containing siloxane groups such as triethylsiloxane ethyl acrylate and methacrylates thereof; And olefins having aromatics such as styrene and 4-methoxystyrene, but are not limited thereto, and these may be used alone or in combination of two or more thereof.
(3) 적어도 2개 이상의 에틸렌계 이중결합을 갖는 가교성 단량체(3) crosslinkable monomers having at least two ethylenic double bonds
또한, 본 발명의 광경화성 수지 조성물에 있어서, 적어도 2개 이상의 에틸렌계 이중결합을 갖는 가교성 단량체의 사용량은 10 내지 80 중량%가 바람직하며, 더욱 바람직하게는 20 내지 60 중량%로 사용하는 것이 좋다.In the photocurable resin composition of the present invention, the amount of the crosslinkable monomer having at least two or more ethylenic double bonds is preferably 10 to 80% by weight, more preferably 20 to 60% by weight. good.
상기 가교성 모노머의 사용량이 10 중량% 미만인 경우는 경화도가 부족하여 패턴형성에 불리하고, 80 중량%를 초과하는 경우는 경화도 증가로 인하여 지나치게 경도가 높아지거나 오히려 미반응물이 많아져 수축의 원인이 될 수 있다.When the amount of the crosslinkable monomer is less than 10% by weight, the degree of curing is insufficient, which is detrimental to the pattern formation. When the amount of the crosslinkable monomer is greater than 80% by weight, the hardness is excessively high due to the increase of the degree of curing or rather, the unreacted substances are increased, causing the shrinkage. This can be
상기 가교성 단량체의 구체적인 예로는, 디에틸렌글리콜모노에틸에테르, 디메틸올디시클로펜탄디아크릴레이트, 1,4-부탄디올디아크릴레이트, 1,3-부틸렌글리콜디아크릴레이트, 1,6-헥산디올디아크릴레이트, 아릴옥시폴리에틸렌글리콜아크릴레이트, 디시클로펜테닐아크릴레이트, 히드록시피발산네오펜틸글리콜디아크릴레이트, 네오펜틸글리콜디아크릴레이트, 1,9-노난디올디아크릴레이트, 폴리에틸렌글리콜디아크릴레이트, 솔비톨트리아크릴레이트, 비스페놀 A 디아크릴레이트 유도체, 트리메틸프로판트리아크릴레이트, 및 이들의 메타아크릴레이트류 등을 들 수 있으나 이에 한정되지는 않으며, 이들을 단독 또는 2 종 이상 혼합하여 사용할 수 있다.Specific examples of the crosslinkable monomer include diethylene glycol monoethyl ether, dimethylol dicyclopentane diacrylate, 1,4-butanediol diacrylate, 1,3-butylene glycol diacrylate, and 1,6-hexanediol Diacrylate, aryloxy polyethylene glycol acrylate, dicyclopentenyl acrylate, hydroxy pivalate neopentyl glycol diacrylate, neopentyl glycol diacrylate, 1, 9-nonane diol diacrylate, polyethylene glycol diacryl Acrylate, sorbitol triacrylate, bisphenol A diacrylate derivative, trimethyl propane triacrylate, and methacrylates thereof, but are not limited thereto, and these may be used alone or in combination of two or more thereof.
또한, 3개 이상의 관능기를 가지는 다관능 가교성 단량체로는 EO 변성글리세롤트리아크릴레이트, PO 변성글리세롤트리아크릴레이트, 트리메틸올프로판트리아크릴레이트, 펜타에리트리톨에톡시테트라아크릴레이트, 디펜타에리트리톨헥사아크릴레이트, EO 변성 트리메틸올프로판트리아크릴레이트 및 이들의 메타아크릴레이트류 등을 들 수 있으나 이에 한정되지는 않으며, 이들을 단독 또는 2종 이상 혼합하여 사용할 수 있다.Moreover, as a polyfunctional crosslinkable monomer which has three or more functional groups, EO modified glycerol triacrylate, PO modified glycerol triacrylate, trimethylol propane triacrylate, pentaerythritol ethoxy tetraacrylate, dipentaerythritol hexa Acrylate, EO modified trimethylol propane triacrylate, and these methacrylates, etc. are mentioned, It is not limited to these, These can be used individually or in mixture of 2 or more types.
(4) 광중합개시제(4) photopolymerization initiator
본 발명의 광경화성 수지 조성물에 있어서, 광중합 개시제의 사용량은 0.1 내지 12 중량%가 바람직하며, 더욱 바람직하게는 0.5 내지 8 중량%로 사용하는 것이 좋다. In the photocurable resin composition of the present invention, the amount of the photopolymerization initiator used is preferably from 0.1 to 12% by weight, more preferably from 0.5 to 8% by weight.
상기 광중합 개시제의 사용량이 0.1 중량% 미만인 경우는 광경화가 느리거나 어렵고, 12 중량%를 초과하는 경우는 반응억제효과가 일어나 막특성이 저하되거나 투과도가 저하되거나 경화마진이 저하되는 경향이 있다. When the amount of the photopolymerization initiator is less than 0.1% by weight, photocuring is slow or difficult, and when the amount of the photopolymerization initiator is more than 12% by weight, a reaction suppression effect occurs, so that a film property, a transmittance, or a curing margin tends to decrease.
상기 광중합 개시제의 구체적인 예로는, Irgacure 369, Igacure 907, Igacure184, Igacure 651, Igacure 819, Igacure 2959, Igacure 1800, Darocur 1173, Darocur 1116 및 Darocur 1020; 2,2'-디에톡시아세토페논, 2,2'-디부톡시아세토페논, 2-히드록시-2-메틸프로리오페논, p-t-부틸트리클로로아세토페논, p-t-부틸디클로로아세토페논, 벤조페논, 4-클로로아세토페논, 4,4'-디메틸아미노벤조페논, 4,4'-디클로로벤조페논, 3,3'-디메틸-2-메톡시벤조페논, 2,2'-디클로로-4-페녹시아세토페논, 2-메틸-1-(4-(메틸티오)페닐)-2-모폴리노프로판-1-온, 2-(4-메틸벤질)-2-디메틸아미노-1-(4-모폴리노페닐)-부탄-1-온 및 2-벤질-2-디메틸아미노-1-(4-모폴리노페닐)-부탄-1-온 등의 아세토 페논계 화합물; 벤조페논, 벤조일 안식향산, 벤조일 안식향산 메틸, 4-페닐 벤조페논, 히드록시 벤조페논, 아크릴화 벤조페논, 4,4'-비스(디메틸 아미노)벤조페논 및 4,4'-비스(디에틸 아미노) 벤조페논 등의 벤조페논계 화합물; 티오크산톤, 2-크롤티오크산톤, 2-메틸티오크산톤, 이소프로필 티오크산톤, 2,4-디에틸 티오크산톤, 2,4-디이소프로필 티오크산톤 및 2-클로로 티오크산톤 등의 티오크산톤계 화합물; 벤조인, 벤조인 메틸 에테르, 벤조인 에틸 에테르, 벤조인 이소프로필 에테르, 벤조 인 이소부틸 에테르 및 벤질디메틸케탈 등의 벤조인계 화합물; 및 2,4,6,-트리클로로 s-트리아진, 2-페닐 4,6-비스(트리클로로 메틸)-s-트리아진, 2-(3',4'-디메톡시 스티릴)-4,6-비스(트리 클로로 메틸)-s-트리아진, 2-(4'-메톡시 나프틸)-4,6-비스(트리클로로 메틸)-s-트리아진, 2-(p-메톡시 페닐)-4,6-비스(트리클로로 메틸)-s-트리아진, 2-(p-트릴)-4,6-비스(트리클로로 메틸)-s-트리아진, 2-페닐 4,6-비스(트리클로로 메틸)-s-트리아진, 비스(트리클로로 메틸)-6-스티릴 s-트리아진, 2-(나프토 1-일)-4,6-비스(트리클로로 메틸)-s-트리아진, 2-(4-메톡시 나프토 1-일)-4,6-비스(트리클로로 메틸)-s-트리아진, 2-4-트리클로로 메틸(피페로닐)-6-트리아진 및 2-4-트리클로로 메틸(4'-메톡시 스티릴)-6-트리아진 등의 트리아진계 화합물 등을 들 수 있으나 이에 한정되지는 않으며, 이들을 단독 또는 2 종 이상 혼합하여 사용할 수 있다. Specific examples of the photopolymerization initiator include Irgacure 369, Igacure 907, Igacure184, Igacure 651, Igacure 819, Igacure 2959, Igacure 1800, Darocur 1173, Darocur 1116 and Darocur 1020; 2,2'-diethoxyacetophenone, 2,2'-dibutoxyacetophenone, 2-hydroxy-2-methylproriophenone, pt-butyltrichloroacetophenone, pt-butyldichloroacetophenone, benzophenone, 4-chloroacetophenone, 4,4'-dimethylaminobenzophenone, 4,4'-dichlorobenzophenone, 3,3'-dimethyl-2-methoxybenzophenone, 2,2'-dichloro-4-phenoxy Acetophenone, 2-methyl-1- (4- (methylthio) phenyl) -2-morpholinopropane-1-one, 2- (4-methylbenzyl) -2-dimethylamino-1- (4-mo Acetophenone compounds such as polynophenyl) -butan-1-one and 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butan-1-one; Benzophenone, benzoyl benzoic acid, methyl benzoyl benzoate, 4-phenyl benzophenone, hydroxy benzophenone, acrylated benzophenone, 4,4'-bis (dimethyl amino) benzophenone and 4,4'-bis (diethyl amino) benzo Benzophenone compounds such as phenone; Thioxanthone, 2-Chrol Thioxanthone, 2-Methyl Thioxanthone, Isopropyl Thioxanthone, 2,4-Diethyl Thioxanthone, 2,4-Diisopropyl Thioxanthone and 2-Chloro Thioxide Thioxanthone type compounds, such as Santon; Benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether and benzyl dimethyl ketal; And 2,4,6, -trichloro s-triazine, 2-phenyl 4,6-bis (trichloro methyl) -s-triazine, 2- (3 ', 4'-dimethoxy styryl) -4 , 6-bis (trichloromethyl) -s-triazine, 2- (4'-methoxy naphthyl) -4,6-bis (trichloromethyl) -s-triazine, 2- (p-methoxy Phenyl) -4,6-bis (trichloromethyl) -s-triazine, 2- (p-tril) -4,6-bis (trichloromethyl) -s-triazine, 2-phenyl 4,6- Bis (trichloro methyl) -s-triazine, bis (trichloro methyl) -6-styryl s-triazine, 2- (naphtho 1-yl) -4,6-bis (trichloro methyl) -s -Triazine, 2- (4-methoxy naphtho 1-yl) -4,6-bis (trichloro methyl) -s-triazine, 2-4-trichloro methyl (piperonyl) -6-tri Triazine compounds such as azine and 2-4-trichloromethyl (4'-methoxy styryl) -6-triazine, and the like, but are not limited thereto, and these may be used alone or in combination of two or more thereof. .
바람직하게는 아세토페논계가 경화마진을 확보하는데 유리하다Preferably the acetophenone system is advantageous to secure a curing margin
(5) 계면활성제(5) surfactant
본 발명의 광경화성 수지 조성물은 계면활성제를 포함할 수 있다. 상기 계면활성제는 광경화성 수지 조성물의 도포성을 개선할 수 있는 것이면 모두 사용가능하며, 본 발명에 사용되는 계면 활성제의 사용량은 전체 조성물에 대하여, 0.001 내지 5 중량%가 바람직하고, 더욱 바람직하게는 0.01 내지 2 중량%로 사용하는 것이 좋다. 만약, 2종 이상의 계면 활성제를 혼합 사용시에는 전체 함량이 위에 제시한 것과 같다. The photocurable resin composition of this invention may contain surfactant. The surfactant may be used as long as it can improve the coating property of the photocurable resin composition, the amount of the surfactant used in the present invention is preferably 0.001 to 5% by weight, more preferably based on the total composition It is preferable to use 0.01 to 2% by weight. If two or more surfactants are used in combination, the total content is as indicated above.
상기 계면 활성제가 0.001 중량% 이하로 함유되면 균일한 도포가 제한적으로 이루어 질수 있으며, 5 중량% 이상이면 몰드전사특성 및 후공정에서의 추가 재료 형성에 문제점을 야기할 수 있다.When the surfactant is contained in an amount of 0.001% by weight or less, uniform coating may be limited, and when 5% by weight or more may cause problems in mold transfer properties and formation of additional materials in a later process.
상기 계면활성제는 실리콘계 및 불소계 계면활성제 중에서 적어도 1종을 함유하는 것이 바람직하고, 2종 이상 혼합 사용하는 것도 가능하다.It is preferable that the said surfactant contains at least 1 type from silicone type and a fluorine type surfactant, It is also possible to mix and use 2 or more types.
상기 계면활성제의 구체적인 예로는, 다이닛폰 잉크 화학공업, 3M 및 신에츠 화학공업사의 불소계 계면활성제, 및 다우, 비와이케이 및 에보닉사의 실리콘계 계면활성제를 들 수 있으나 이에 한정되지는 않는다.Specific examples of the surfactant may include, but are not limited to, fluorine-based surfactants from Dainippon Ink Chemical Co., Ltd., 3M and Shin-Etsu Chemical Co., Ltd., and silicone-based surfactants from Dow, BK, and Evonik.
또한, 본 발명의 광경화성 수지 조성물은 용매를 추가로 포함할 수 있다. In addition, the photocurable resin composition of the present invention may further include a solvent.
일반적으로 Printing process용 광경화성 수지 조성물의 경우에는 용매를 사용하지 않지만, 본 발명에서는 폴리실라잔의 용해 및 광경화성 수지 조성물과의 상용성을 위해 용매를 첨가할 수도 있다. 상기 용매의 사용량은 0 내지 70중량%가 바람직하며, 더욱 바람직하게는 0 내지 50 중량%로 사용되는 것이 좋다. Generally, a solvent is not used in the case of the photocurable resin composition for a printing process, but in the present invention, a solvent may be added for dissolution of polysilazane and compatibility with the photocurable resin composition. The amount of the solvent is preferably 0 to 70% by weight, more preferably 0 to 50% by weight.
상기 용매의 구체적인 예로는, 아세토니트릴, 글리세롤, 디메틸설폭사이드, 나이트로메탄, 디메틸포르아마이드, 페놀, N-메틸피롤리돈, 피리딘 퍼플루오로트리부틸아민, 퍼플루오로데칼린, 2-부타논, 메틸렌카보네이트 메탄올, 에탄올, 에틸렌글리콜, 트리에틸렌글리콜, 테트라에틸렌글리콜, 프로필렌글리콜, 프로필렌에틸렌글리콜, 디에틸렌글리콜, 부탄디올, 벤질알코올 및 헥실알코올 등의 알코올류; 프로필렌카보네이트, 테트라하이드로퓨란, 1,4-디옥산, 1-메톡시-2-프로판올, 메톡시벤젠, 디부틸에테르 및 디페놀에테르 등의 에테르류; 에틸아세테이트, 프로필아세테이트, 부틸아세테이트, 에틸프로피온, 에틸에스테르, 부틸에스테르, 메틸-2-하이드록시이소부티라트, 2-메톡시-1-메틸에틸에스테르, 2-메톡시에탄올아세테이트 및 2-에톡시에탄올아세테이트 등의 에스테르류; 에틸렌글리콜메틸에테르아세테이트 및 에틸렌글리콜에틸에테르아세테이트 등의 에틸렌글리콜알킬에테르아세테이트류; 에틸렌글리콜메틸에테르프로피오네이트 및 에틸렌글리콜에틸에테르프로피오네이트 등의 에틸렌글리콜알킬에테르프로피오네이트류; 에틸렌글리콜메틸에테르 및 에틸렌글리콜에틸에테르 등의 에틸렌글리콜모노알킬에테르류; 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노에틸에테르, 디에틸렌글리콜디메틸에테르 및 디에틸렌글리콜메틸에틸에테르 등의 디에틸렌글리콜알킬에테르류; 프로필렌글리콜메틸에테르아세테이트, 프로필렌글리콜에틸에테르아세테이트 및 프로필렌글리콜프로필에테르아세테이트 등의 프로필렌글리콜알킬에테르아세테이트류; 프로필렌글리콜메틸에테르프로피오네이트, 프로필렌글리콜에틸에테르프로피오네이트 및 프로필렌글리콜프로필에테르프로피오네이트 등의 프로필렌글리콜알킬에테르프로피오네이트류; 프로필렌글리콜메틸에테르, 프로필렌글리콜에틸에테르, 프로필렌글리콜프로필에테르 및 프로필렌글리콜부틸에테르 등의 프로필렌글리콜모노알킬에테르류; 디프로필렌글리콜디메틸에테르 및 디포로필렌글리콜디에틸에테르 등의 디프로필렌글리콜알킬에테르류; 부틸렌글리콜모노메틸에테르 및 부틸렌글리콜모노에틸에테르 등의 부틸렌글리콜모노메틸에테르류; 및 디부틸렌글리콜디메틸에테르 및 디부틸렌글리콜디에틸에테르 등의 디부틸렌글리콜알킬에테르류 등을 들 수 있으나 이에 한정되지는 않으며, 이들을 단독 또는 2종 이상 혼합하여 사용할 수 있다.Specific examples of the solvent include acetonitrile, glycerol, dimethyl sulfoxide, nitromethane, dimethyl formamide, phenol, N-methylpyrrolidone, pyridine perfluorotributylamine, perfluoro decalin, 2-butanone, Alcohols such as methylene carbonate methanol, ethanol, ethylene glycol, triethylene glycol, tetraethylene glycol, propylene glycol, propylene ethylene glycol, diethylene glycol, butanediol, benzyl alcohol and hexyl alcohol; Ethers such as propylene carbonate, tetrahydrofuran, 1,4-dioxane, 1-methoxy-2-propanol, methoxybenzene, dibutyl ether and diphenol ether; Ethyl acetate, propyl acetate, butyl acetate, ethyl propion, ethyl ester, butyl ester, methyl-2-hydroxyisobutyrate, 2-methoxy-1-methylethyl ester, 2-methoxyethanol acetate and 2-ethoxy Esters such as ethanol acetate; Ethylene glycol alkyl ether acetates such as ethylene glycol methyl ether acetate and ethylene glycol ethyl ether acetate; Ethylene glycol alkyl ether propionates such as ethylene glycol methyl ether propionate and ethylene glycol ethyl ether propionate; Ethylene glycol monoalkyl ethers such as ethylene glycol methyl ether and ethylene glycol ethyl ether; Diethylene glycol alkyl ethers such as diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, and diethylene glycol methyl ethyl ether; Propylene glycol alkyl ether acetates such as propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate and propylene glycol propyl ether acetate; Propylene glycol alkyl ether propionates such as propylene glycol methyl ether propionate, propylene glycol ethyl ether propionate and propylene glycol propyl ether propionate; Propylene glycol monoalkyl ethers such as propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol propyl ether and propylene glycol butyl ether; Dipropylene glycol alkyl ethers such as dipropylene glycol dimethyl ether and diporoethylene glycol diethyl ether; Butylene glycol monomethyl ether, such as butylene glycol monomethyl ether and butylene glycol monoethyl ether; And dibutylene glycol alkyl ethers, such as dibutylene glycol dimethyl ether and dibutylene glycol diethyl ether, etc. are mentioned, It is not limited to these, These can be used individually or in mixture of 2 or more types.
본 발명에 따른 조성물의 점도는 25 ℃에 있어서 2 mPa.s 내지 25 mPa.s이며, 바람직하게는 3 mPa.s 내지 20 mPa.s이고, 더욱 바람직하게는 5 mPa.s 내지 15 mPa.s이다. The viscosity of the composition according to the invention is 2 mPa · s to 25 mPa · s at 25 ° C., preferably 3 mPa · s to 20 mPa · s, more preferably 5 mPa · s to 15 mPa · s to be.
이때, 본 발명의 조성물 점도가 2 mPa.s 이하가 되면 원하는 도막 두께 형성에 제한적이 되며, 25 mPa.s 이상이 되면 도포방법에 따라, 기판에 재료 도포가 어려울 수도 있다.At this time, when the composition viscosity of the present invention is 2 mPa · s or less, it is limited to the desired coating film thickness formation, and when the composition viscosity is 25 mPa · s or more, it may be difficult to apply the material to the substrate.
또한, 본 발명은 상기의 광경화형 수지 조성물을 이용한 프린팅 프로세스용 보호막 및 미세패턴의 제조방법 및 상기 방법에 의하여 제조된 보호막 및 미세패턴을 제공한다. The present invention also provides a method for producing a protective film and a fine pattern for a printing process using the photocurable resin composition, and a protective film and a fine pattern produced by the method.
구체적으로, 본 발명에 따른 프린팅 프로세스용 보호막의 제조방법은, 본 발명에 따른 광경화 조성물을 기판에 도포하고 노광하는 단계를 포함한다.Specifically, the method for producing a protective film for a printing process according to the present invention includes applying and exposing a photocurable composition according to the present invention to a substrate.
또한, 본 발명에 따르면, 상기 조성물을 기판에 도포한 후, 임프린트 리소그래피 또는 롤 프린트 공정을 이용하여 도막을 형성하고 노광하여 반도체, 디스플레이를 포함하는 각종 전자 디바이스 산업 공정에 필요한 미세 패턴을 안정적이고 용이하게 형성할 수 있다. In addition, according to the present invention, after applying the composition to the substrate, by using an imprint lithography or roll printing process to form a coating film and exposed to it, it is possible to stably and easily fine patterns required for various electronic device industrial processes including semiconductors and displays Can be formed.
이때, 상기 조성물은 기판 (예를 들면, 실리콘 기판, 세라믹 기판, 금속층, 고분자층 등)위에 스핀 도포, 롤러 도포, 슬릿, 잉크젯 도포 등, 적당한 방법을 사용하여 0.5∼10 ㎛의 두께로 도포하는 것이 바람직하다. At this time, the composition is applied to a substrate (for example, silicon substrate, ceramic substrate, metal layer, polymer layer, etc.) by applying a suitable method such as spin coating, roller coating, slit, inkjet coating, etc. in a thickness of 0.5 to 10 ㎛ It is preferable.
노광에 사용되는 광원으로는, 예를 들면, 190∼450 ㎚, 바람직하게는 200∼400 ㎚ 영역의 UV를 사용하며, 전자선 조사도 가능하다. 또한, 이후에 막의 용도 및 특성 향상을 위해 고온 열처리 공정을 실시할 수도 있다.As a light source used for exposure, UV of 190-450 nm, Preferably 200-400 nm area is used, and electron beam irradiation is also possible. In addition, a high temperature heat treatment process may be subsequently performed to improve the use and properties of the film.
본 발명에 따라 제조된 보호막 및 미세패턴은 기판에 대한 접착성, 고온, 고습 및 고압 조건에 대한 내구성, 고온 처리 후의 투과도 및 내열성이 우수하며, 하부막의 변성 정도가 적으므로, 반도체, 디스플레이를 포함하는 각종 전자 디바이스 산업 공정에 필요한 보호막 및 미세 패턴으로 유용하게 사용될 수 있으며, 본 발명의 조성물은 이용한 임프린트 리소그래피 및 롤 프린트 공정이, 종래 미세 패턴 형성을 위한 포토 리소그래피 공정을 대체함으로써 기존 포토리소그래피 공정의 노광, 현상, 세정 등의 여러 단계를 단순화 할 수 있을 뿐만 아니라, 제조 공정 시간(tact time)을 단축하여, 제조원가를 절감하고 생산성을 향상시킬 수 있다.The protective film and the micropattern manufactured according to the present invention have excellent adhesion to a substrate, durability against high temperature, high humidity, and high pressure conditions, high permeability and heat resistance after high temperature treatment, and a low degree of modification of the lower layer, and thus include a semiconductor and a display. It can be usefully used as a protective film and a fine pattern required for various electronic device industry process, the composition of the present invention is the imprint lithography and roll printing process using the conventional photolithography process by replacing the photolithography process for forming a fine pattern In addition to simplifying the steps of exposure, development, cleaning, etc., the manufacturing process time can be shortened, thereby reducing manufacturing costs and improving productivity.
이하, 본 발명의 이해를 돕기 위하여 바람직한 실시예를 제시하나, 하기 실시예는 본 발명을 예시하는 것일 뿐 본 발명의 범위가 하기 실시예에 한정되는 것은 아니다.Hereinafter, preferred examples are provided to help understanding of the present invention, but the following examples are merely to illustrate the present invention, and the scope of the present invention is not limited to the following examples.
[실시예 1]Example 1
상기 화학식 1의 구조를 가지며, 분자량이 500인 폴리실라잔 SN-1 5 중량부, 에틸렌계 단량체로서 4-히드록시부틸아크릴레이트 30 중량부 및 페녹시에틸아크릴레이트 30 중량부, 에틸렌계 이중결합을 가지는 가교성 단량체로서 1,4-부탄디올 디아크릴레이트 30 중량부, 광중합개시제로서 Igacure 369(시바 제품) 3 중량부, 및 계면활성제로서 BYK사의 실리콘계 계면활성제 0.1 중량부를 상온에서 6시간 이상 균일하게 혼합하여 본원 발명에 따른 광경화 조성물을 제조하였다.5 parts by weight of polysilazane SN-1 having a structure of Formula 1, molecular weight of 500, 30 parts by weight of 4-hydroxybutyl acrylate and 30 parts by weight of phenoxyethyl acrylate as an ethylene monomer, an ethylene double bond 30 parts by weight of 1,4-butanediol diacrylate as a crosslinkable monomer having 3 parts by weight, 3 parts by weight of Igacure 369 (manufactured by Ciba) as a photopolymerization initiator, and 0.1 parts by weight of BYK's silicone-based surfactant as a surfactant for 6 hours or more at room temperature. Mixing produced a photocurable composition according to the present invention.
또한, 탈지 세척한 메탈 기판 상에 0.5 내지 5 ㎛의 두께로 상기 제조한 광경화 조성물을 각각 도포하고, 고분자 몰드와 합착하여 365 ㎚의 파장을 가진 램프를 사용하여 노광한 후, 형성된 박막과 고분자 몰드를 이형하여 보호막을 형성하였다.Further, each of the photocurable compositions prepared above was applied on a degreasing-washed metal substrate with a thickness of 0.5 to 5 μm, bonded to a polymer mold and exposed using a lamp having a wavelength of 365 nm, and then formed thin film and polymer. The mold was released to form a protective film.
[실시예 2]Example 2
상기 화학식 1의 구조를 가지며, 분자량이 500인 폴리실라잔 SN-1 10 중량부를 사용한 것을 제외하고는 상기 실시예 1과 동일한 방법으로 본원 발명에 따른 광경화 조성물 및 보호막을 제조하였다. A photocurable composition and a protective film according to the present invention were prepared in the same manner as in Example 1, except that 10 parts by weight of polysilazane SN-1 having a structure of Formula 1 and a molecular weight of 500 was used.
[실시예 3]Example 3
상기 화학식 1의 구조를 가지며, 분자량이 1500인 폴리실라잔 SN-2 10 중량부를 폴리실라잔 SN-1 대신 사용한 것을 제외하고는 상기 실시예 1과 동일한 방법으로 본원 발명에 따른 광경화 조성물 및 보호막을 제조하였다. The photocurable composition and the protective film according to the present invention in the same manner as in Example 1, except that 10 parts by weight of polysilazane SN-2 having a structure of Formula 1 and having a molecular weight of 1500 was used instead of polysilazane SN-1. Was prepared.
[비교예 1]Comparative Example 1
폴리실라잔을 사용하지 않고, 4-히드록시부틸아크릴레이트를 40 중량부로 사용한 것을 제외하고는 상기 실시예 1과 동일한 방법으로 광경화 조성물 및 보호막을 제조하였다. A photocurable composition and a protective film were prepared in the same manner as in Example 1, except that 4-hydroxybutyl acrylate was used in an amount of 40 parts by weight without using polysilazane.
[실험][Experiment]
상기 실시예 1 내지 3, 및 비교예 1에서 제조한 보호막에 대하여 하기와 같은 방법으로 기판과의 접착력, 내구성, 투과도, 내열성 및 하부막 변성방지 정도를 측정하였으며, 그 결과를 하기 표 1에 나타내었다.The protective film prepared in Examples 1 to 3, and Comparative Example 1 was measured for adhesion, durability, permeability, heat resistance, and lower film deterioration degree with respect to the substrate by the following method, and the results are shown in Table 1 below. It was.
가) 접착력 (기판밀착성)A) adhesion (substrate adhesion)
가로, 세로 100개의 셀을 만들어 3M사 610 접착 테이프를 이용하여 상기와 같이 보호막이 형성된 기판에 밀착시킨 후에 테이프를 천천히 떼어냈을 때 기판 상에 남은 셀 숫자를 한 개당 1%로 지정하여 하기와 같은 기준으로 접착성 및 밀착성 평가를 실시하였다.After making 100 cells horizontally and vertically and using 3M's 610 adhesive tape to closely contact the substrate with the protective film as described above, when the tape was slowly peeled off, the number of remaining cells on the substrate was designated as 1% per one. Adhesiveness and adhesiveness evaluation were implemented as a reference.
A: 기판 상에 남은 셀 숫자가 100% ~ 80%인 경우A: When the number of remaining cells on the substrate is 100% to 80%
B: 기판 상에 남은 셀 숫자가 80% ~ 50%인 경우B: When the number of remaining cells on the substrate is 80% to 50%
C: 기판 상에 남은 셀 숫자가 50% ~ 15%인 경우C: The number of cells remaining on the substrate is 50% to 15%
D: 기판 상에 남은 셀 숫자가 15% ~ 0%인 경우D: When the number of remaining cells on the substrate is 15% to 0%
나) 내구성 (고온, 고습, 고압)B) durability (high temperature, high humidity, high pressure)
상기와 같이 보호막이 형성된 기판을 230℃에서 30분 동안 오븐에서 열경화시키고, 상기 가)와 동일한 방법으로 접착력을 확인하여 100% 접착상태를 확인하였다. The substrate on which the protective film was formed as described above was thermally cured in an oven at 230 ° C. for 30 minutes, and the adhesive strength was checked in the same manner as in the above a) to confirm 100% adhesion.
상기 기판을 고온, 고압, 고습이 가능한 장비에 120℃, 습도 100%, 2기압, 24시간 방치 조건으로 처리한 다음, 기판의 표면 상태 및 접착상태를 다시 확인하였으며, 그 결과를 상기 가)와 동일한 기준으로 평가하였다. The substrate was treated at 120 ° C., 100% humidity, 2 atmospheres, and left for 24 hours in a device capable of high temperature, high pressure, and high humidity, and then the surface state and adhesion state of the substrate were rechecked. Evaluation was based on the same criteria.
이때, 장비 투입 전에 접착 100% 상태를 확인하였기에 접착상태가 나쁘다는 것은 도막내부로 수분이 침투하여 하부기판과 들뜸 현상이 발생하였음을 의미한다. At this time, since the adhesive 100% state was checked before the equipment was put in place, the poor adhesive state means that the moisture penetrated into the coating film and the lower substrate and the lifting phenomenon occurred.
다) 투과도C) permeability
상기와 같이 보호막이 형성된 기판을 230℃에서 150분 동안 오븐에서 열경화시키고, 도막이 형성된 기판을 투과율 장비를 이용하여 400 ㎚에서 투과율을 측정하였으며, 하기와 같은 기준으로 평가하였다. As described above, the substrate on which the protective film was formed was thermally cured in an oven at 230 ° C. for 150 minutes, and the substrate on which the coating film was formed was measured at 400 nm using a transmittance equipment, and evaluated according to the following criteria.
A: 투과도가 98% 이상인 경우A: When the transmittance is 98% or more
B: 투과도가 97% 이상인 경우B: transmittance is 97% or more
C: 투과도가 96% 이상인 경우C: When the transmittance is 96% or more
D: 투과도가 95% 이상인 경우D: When the transmittance is 95% or more
라) 내열성D) heat resistance
상기와 같이 보호막이 형성된 기판을 230℃에서 30분 동안 오븐에서 열경화시키면서 열중량 분석기 (TGA)로 무게감소를 측정하였으며, 하기와 같은 기준으로 평가하였다. The weight loss was measured by a thermogravimetric analyzer (TGA) while thermally curing the substrate having the protective film formed thereon at 230 ° C. for 30 minutes in an oven, and evaluated according to the following criteria.
A: 무게감소가 1% 미만인 경우A: If the weight loss is less than 1%
B: 무게감소가 1% 이상, 3% 미만인 경우B: Weight loss is more than 1% but less than 3%
C: 무게감소가 3% 이상, 5% 미만인 경우C: Weight loss is more than 3% and less than 5%
D: 무게감소가 5% 이상인 경우D: Weight loss is more than 5%
마) 하부막 변성방지E) Lower layer degeneration prevention
상기와 같이 보호막이 형성된 기판을 230℃에서 150분 동안 오븐에서 열경화시키고, 도막이 형성된 기판을 육안에 의한 얼룩을 및 SEM (자기주사현미경)을 통해서 확인하였으며 하기와 같은 기준으로 평가하였다. 또한, 상기 SEM 사진을 도1 내지 2에 나타내었다.The substrate on which the protective film was formed as described above was thermally cured in an oven at 230 ° C. for 150 minutes, and the substrate on which the coating film was formed was checked by visual inspection and SEM (Self-scanning microscope), and evaluated according to the following criteria. In addition, the SEM photograph is shown in Figs.
A: 표면얼룩 20%이하 A: 20% or less surface stain
B: 표면얼룩 20%이상, 40%이하 B: 20% or more of surface stains, 40% or less
C: 표면얼룩 40%이상, 60%이하C: More than 40% of surface stains, less than 60%
D: 표면얼룩 60%이상D: 60% or more surface stain
표 1
구분 접착력 내구성 투과도 내열성 하부막 변성방지
실시예 1 B B A B B
실시예 2 A A A A A
실시예 3 A A A B A
비교예 1 D D C C D
Table 1
division Adhesion durability Transmittance Heat resistance Lower film degeneration prevention
Example 1 B B A B B
Example 2 A A A A A
Example 3 A A A B A
Comparative Example 1 D D C C D
상기 표 1에 나타난 바와 같이, 폴리실라잔 화합물을 포함하지 않은 비교예 1의 조성물의 경우, 접착력, 내구성, 투과도, 내열성 및 하부막 변성 방지 정도가 현저히 떨어진 반면, 본원 발명에 따라 폴리실라잔 화합물을 포함하는 실시예 1 내지 3의 조성물은 접착력, 내구성, 투과도, 내열성 및 하부막 변성 방지면에서 모두 우수한 효과를 나타내었다. 특히 폴리실라잔 화합물을 10 중량% 이상 함유한 실시예 2 및 3의 경우 접착력, 내구성, 내열성 및 하부막 변성 방지면에서 더욱 우수한 효과를 나타내었다. As shown in Table 1, in the case of the composition of Comparative Example 1 that does not include a polysilazane compound, the adhesion, durability, permeability, heat resistance and the degree of prevention of underlayer film deterioration are significantly reduced, but according to the present invention, the polysilazane compound The compositions of Examples 1 to 3, including the, exhibited excellent effects in terms of adhesion, durability, permeability, heat resistance, and lower film deterioration. In particular, Examples 2 and 3 containing 10% by weight or more of the polysilazane compound showed more excellent effects in terms of adhesion, durability, heat resistance, and lower film deterioration.
본 발명에 따른 광경화형 수지 조성물은 폴리실라잔 화합물을 포함함으로써, 보호막 형성시, 기존 임프린트 리소그래피 및 롤 프린트 공정에 사용되는 수지 조성물을 이용한 도막에 비해 기판과의 접착력, 고온처리 후에도 높은 투과도 유지, 고온, 고습 등 가혹한 조건에서의 내구성, 내열성 및 고온공정에 의한 하부막 변성 방지 등을 동시에 개선시킴으로 보호막(영구막)으로서의 우수한 성능을 나타낸다.Since the photocurable resin composition according to the present invention comprises a polysilazane compound, when the protective film is formed, compared with the coating film using the resin composition used in the conventional imprint lithography and roll printing process, the adhesive strength with the substrate, high transmittance even after high temperature treatment, It shows excellent performance as a protective film (permanent film) by simultaneously improving the durability, heat resistance, and prevention of underlayer film deterioration by high temperature processes in harsh conditions such as high temperature and high humidity.

Claims (23)

  1. (1) 폴리실라잔 화합물; (1) polysilazane compounds;
    (2) 에틸렌계 단량체; (2) ethylene monomers;
    (3) 적어도 2개 이상의 에틸렌계 이중결합을 갖는 가교성 단량체;(3) crosslinkable monomers having at least two ethylenic double bonds;
    (4) 광중합 개시제; 및(4) photopolymerization initiators; And
    (5) 계면활성제를 포함하는 것을 특징으로 하는 프린팅 프로세스용 광경화성 수지 조성물.(5) A photocurable resin composition for a printing process, comprising a surfactant.
  2. 제1항에 있어서, The method of claim 1,
    상기 광경화성 수지 조성물이The photocurable resin composition
    (1) 폴리실라잔 화합물 1 내지 60 중량%; (1) 1 to 60 weight percent of a polysilazane compound;
    (2) 에틸렌계 단량체 10 내지 80 중량%; (2) 10 to 80 wt% of an ethylene monomer;
    (3) 적어도 2개 이상의 에틸렌계 이중결합을 갖는 가교성 단량체 10 내지 80 중량%;(3) 10 to 80% by weight of a crosslinkable monomer having at least two or more ethylenic double bonds;
    (4) 광중합 개시제 0.1 내지 12 중량%; 및(4) 0.1 to 12 wt% of a photopolymerization initiator; And
    (5) 계면활성제 0.001 내지 5 중량%(5) 0.001 to 5 wt% surfactant
    를 포함하는 것을 특징으로 하는 프린팅 프로세스용 광경화성 수지 조성물.Photocurable resin composition for a printing process comprising a.
  3. 제1항에 있어서,The method of claim 1,
    상기 폴리실라잔 화합물이 하기 화학식 1의 구조 단위를 갖는 직사슬형 구조를 포함하고, 300 내지 2,000의 분자량을 갖고, 1분자 중에 3 내지 10개의 SiH3 기를 갖고, 화학분석에 의한 원소 비율이 각 중량%당 Si:59~62, N: 31~34 및 H: 6.5~7.5인 퍼하이드로폴리실라잔인 것을 특징으로 하는 프린팅 프로세스용 광경화성 수지 조성물.The polysilazane compound includes a linear structure having a structural unit represented by the following formula (1), has a molecular weight of 300 to 2,000, has 3 to 10 SiH 3 groups in one molecule, and the element ratio by chemical analysis is each It is perhydropolysilazane which is Si: 59-62 , N: 31-34, and H: 6.5-7.5 per weight%, The photocurable resin composition for printing processes.
    [화학식 1][Formula 1]
    Figure PCTKR2011009635-appb-I000007
    Figure PCTKR2011009635-appb-I000007
    상기 식에서 n은 정수이다.Wherein n is an integer.
  4. 제3항에 있어서,The method of claim 3,
    상기 폴리실라잔 화합물이 분자 내에 하기 화학식 2의 구조를 갖고 사슬형 또는 고리형 부분을 포함하는 것을 특징으로 하는 프린팅 프로세스용 광경화성 수지 조성물.The polysilazane compound has a structure of formula (2) in the molecule and comprises a chain or cyclic moiety, the photocurable resin composition for a printing process.
    [화학식 2][Formula 2]
    Figure PCTKR2011009635-appb-I000008
    Figure PCTKR2011009635-appb-I000008
  5. 제4항에 있어서,The method of claim 4, wherein
    상기 폴리실라잔 화합물이 하기 화학식 3 또는 4의 구조를 갖고, 수평균분자량이 100-50000인 화합물인 것을 특징으로 하는 프린팅 프로세스용 광경화성 수지 조성물;A photocurable resin composition for a printing process, wherein the polysilazane compound has a structure of the following Chemical Formula 3 or 4 and has a number average molecular weight of 100-50000;
    [화학식 3][Formula 3]
    Figure PCTKR2011009635-appb-I000009
    Figure PCTKR2011009635-appb-I000009
    [화학식 4][Formula 4]
    Figure PCTKR2011009635-appb-I000010
    Figure PCTKR2011009635-appb-I000010
    상기 식에서, R1, R2 및 R3는 각각 독립적으로 수소원자, 알킬기, 알케닐기, 시클로알킬기, 아릴기, 규소에 직결하는 기가 탄소인 기, 알킬실릴기, 알킬아미노기, 및 알콕시기를 나타내며, n은 정수이다. (이때, R1, R2 및 R3 중 적어도 1개는 수소원자이다.) Wherein R 1 , R 2 and R 3 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, a group in which the group directly connected to silicon is carbon, an alkylsilyl group, an alkylamino group, and an alkoxy group, n is an integer. (At least one of R 1 , R 2 and R 3 is a hydrogen atom.)
  6. 제5항에 있어서,The method of claim 5,
    상기 폴리실라잔 화합물이, 수평균 분자량이 100 내지 50,000인 폴리실라잔 또는 그 변성물인 것을 특징으로 하는, 프린팅 프로세스용 광경화성 수지 조성물.The polysilazane compound is polysilazane having a number average molecular weight of 100 to 50,000 or a modified product thereof, The photocurable resin composition for a printing process.
  7. 제5항에 있어서,The method of claim 5,
    상기 화학식 4의 화합물이 R1 및 R2에 수소원자, 및 R3에 메틸기를 갖는 폴리실라잔인 것을 특징으로 하는 프린팅 프로세스용 광경화성 수지 조성물.The compound of formula (4) is a polysilazane having a hydrogen atom in R 1 and R 2 , and a methyl group in R 3 , the photocurable resin composition for a printing process.
  8. 제5항에 있어서,The method of claim 5,
    상기 화학식 4의 화합물이 R1 및 R2에 수소원자, 및 R3에 유기기를 갖는 폴리오가노(하이드로)실라잔인 것을 특징으로 하는 프린팅 프로세스용 광경화성 수지 조성물.The compound of formula 4 is a polyorgano (hydro) silazane having a hydrogen atom in R 1 and R 2 , and an organic group in R 3 , the photocurable resin composition for a printing process.
  9. 제8항에 있어서,The method of claim 8,
    상기 화학식 4의 화합물이 중합도가 3 내지 5인 고리형 구조를 갖는 것 또는 분자 내에 사슬형 구조와 고리형 구조를 동시에 갖는 것임을 특징으로 하는 프린팅 프로세스용 광경화성 수지 조성물.The compound of formula 4 has a cyclic structure having a degree of polymerization of 3 to 5 or a photocurable resin composition for a printing process, characterized in that it has a chain structure and a cyclic structure in the molecule at the same time.
  10. 제5항에 있어서,The method of claim 5,
    상기 화학식 4의 화합물이 R1에 수소원자, 및 R2 및 R3에 유기기를 갖는 폴리실라잔인 것을 특징으로 하는 프린팅 프로세스용 광경화성 수지 조성물.The compound of formula (4) is a polysilazane having a hydrogen atom in R 1 , and an organic group in R 2 and R 3 , the photocurable resin composition for a printing process.
  11. 제5항에 있어서,The method of claim 5,
    상기 화학식 4의 화합물이 R1 및 R2에 유기기, 및 R3에 수소 원자를 갖는 중합도가 3~5정도인 고리형 구조를 갖는 폴리실라잔인 것을 특징으로 하는 프린팅 프로세스용 광경화성 수지 조성물.The compound of formula 4 is a polysilazane having a cyclic structure having a degree of polymerization of 3 to 5 having an organic group in R 1 and R 2 , and a hydrogen atom in R 3 , a photocurable resin composition for a printing process.
  12. 제1항에 있어서,The method of claim 1,
    상기 폴리실라잔 화합물이 유기 폴리실라잔으로서 하기 화학식 5의 가교 구조를 분자 내에 갖는 폴리오가노(하이드로)실라잔, 및 R1SiX3 (X:할로겐)의 암모니아 분해에 의해 얻어지는 가교 구조를 갖는 폴리실라잔, R1Si(NH)X, 또는 R1SiX3의 공(共)암모니아 분해에 의해 얻어지는 하기 화학식 6의 구조를 갖는 폴리실라잔인 것을 특징으로 하는 프린팅 프로세스용 광경화성 수지 조성물.A polysilazane having a crosslinked structure obtained by ammonia decomposition of a polyorgano (hydro) silazane having a crosslinked structure represented by the following formula (5) as a polysilazane compound in a molecule, and R1SiX3 (X: halogen), It is polysilazane which has a structure of following General formula (6) obtained by R1Si (NH) X or co-ammonia decomposition of R1SiX3. The photocurable resin composition for printing processes.
    [화학식 5][Formula 5]
    Figure PCTKR2011009635-appb-I000011
    Figure PCTKR2011009635-appb-I000011
    [화학식 6][Formula 6]
    Figure PCTKR2011009635-appb-I000012
    Figure PCTKR2011009635-appb-I000012
    상기 식에서 R1 및 R2는 각각 독립적으로 수소원자, 알킬기, 알케닐기 또는 아릴기를 나타내며, m 및 n은 각각 독립적으로 정수이다.In the above formula, R 1 and R 2 each independently represent a hydrogen atom, an alkyl group, an alkenyl group or an aryl group, and m and n each independently represent an integer.
  13. 제1항에 있어서,The method of claim 1,
    상기 폴리실라잔 화합물이 무기실라잔 공중합체, 개질 폴리실라잔 또는 폴리실라잔에 유기성분을 도입한 공중합 실라잔인 것을 특징으로 하는 프린팅 프로세스용 광경화성 수지 조성물.The polysilazane compound is an inorganic silazane copolymer, a modified polysilazane, or a copolymerized silazane having an organic component introduced into the polysilazane, a photocurable resin composition for a printing process.
  14. 제1항에 있어서,The method of claim 1,
    상기 에틸렌계 단량체가 이소부틸아크릴레이트, tert-부틸아크릴레이트, 라우릴아크릴레이트, 메틸메타크릴레이트, 알킬아크릴레이트, 시클로헥실아크릴레이트, 이소보닐아크릴레이트, 벤질메타크릴레이트, 벤질아크릴레이트, 2-히드록시아크릴레이트, 트리메톡시부틸아크릴레이트, 에틸카르비돌아크릴레이트, 페녹시에틸아크릴레이트, 4-히드록시부틸아크릴레이트, 페녹시폴리에틸렌글리콜아크릴레이트, 2-히드록시에틸아크릴레이트, 2-히드록시프로필아크릴레이트, 2-아크릴옥시에틸-2-히드록시프로필프탈레이트, 2-히드록시-3-페녹시프로필아크릴레이트 및 이들의 메타크릴레이트류; 3-플루오로에틸아크릴레이트, 4-플루오로프로필아크릴레이트와 같은 할로겐화합물을 포함하는 아크릴레이트 및 이들의 메타크릴레이트류; 트리에틸실록실에틸아크릴레이트와 같은 실록산기를 포함하는 아크릴레이트 및 이들의 메타크릴레이트류; 스티렌 및 4-메톡시스티렌과 같은 방향족을 갖는 올레핀류; 및 이들의 혼합물로 이루어진 군에서 선택되는 것을 특징으로 하는 프린팅 프로세스용 광경화성 수지 조성물.The ethylene monomer is isobutyl acrylate, tert- butyl acrylate, lauryl acrylate, methyl methacrylate, alkyl acrylate, cyclohexyl acrylate, isobornyl acrylate, benzyl methacrylate, benzyl acrylate, 2 -Hydroxy acrylate, trimethoxybutyl acrylate, ethyl carbidol acrylate, phenoxyethyl acrylate, 4-hydroxybutyl acrylate, phenoxy polyethylene glycol acrylate, 2-hydroxyethyl acrylate, 2 Hydroxypropyl acrylate, 2-acryloxyethyl-2-hydroxypropyl phthalate, 2-hydroxy-3-phenoxypropyl acrylate and methacrylates thereof; Acrylates including halogen compounds such as 3-fluoroethyl acrylate and 4-fluoropropyl acrylate and methacrylates thereof; Acrylates containing siloxane groups such as triethylsiloxane ethyl acrylate and methacrylates thereof; Olefins having aromatics such as styrene and 4-methoxystyrene; And a photocurable resin composition for a printing process, characterized in that selected from the group consisting of.
  15. 제1항에 있어서,The method of claim 1,
    상기 적어도 2개 이상의 에틸렌계 이중결합을 갖는 가교성 단량체가 디에틸렌글리콜모노에틸에테르, 디메틸올디시클로펜탄디아크릴레이트, 1,4-부탄디올디아크릴레이트, 1,3-부틸렌글리콜디아크릴레이트, 1,6-헥산디올디아크릴레이트, 아릴옥시폴리에틸렌글리콜아크릴레이트, 디시클로펜테닐아크릴레이트, 히드록시피발산네오펜틸글리콜디아크릴레이트, 네오펜틸글리콜디아크릴레이트, 1,9-노난디올디아크릴레이트, 폴리에틸렌글리콜디아크릴레이트, 솔비톨트리아크릴레이트, 비스페놀 A 디아크릴레이트 유도체, 트리메틸프로판트리아크릴레이트, 이들의 메타아크릴레이트류 및 이들의 혼합물로 이루어진 군에서 선택되는 것을 특징으로 하는 프린팅 프로세스용 광경화성 수지 조성물.The crosslinkable monomer having at least two ethylenic double bonds may include diethylene glycol monoethyl ether, dimethylol dicyclopentane diacrylate, 1,4-butanediol diacrylate, 1,3-butylene glycol diacrylate, 1,6-hexanediol diacrylate, aryloxy polyethylene glycol acrylate, dicyclopentenyl acrylate, hydroxy pivalate neopentyl glycol diacrylate, neopentyl glycol diacrylate, 1,9-nonanediol diacryl A sight for a printing process, characterized in that selected from the group consisting of latex, polyethylene glycol diacrylate, sorbitol triacrylate, bisphenol A diacrylate derivative, trimethyl propane triacrylate, methacrylates thereof and mixtures thereof Chemical composition.
  16. 제1항에 있어서,The method of claim 1,
    상기 광중합개시제가 Irgacure 369, Igacure 907, Igacure184, Igacure 651, Igacure 819, Igacure 2959, Igacure 1800, Darocur 1173, Darocur 1116 및 Darocur 1020, 아세토 페논계 화합물, 벤조페논계 화합물, 티오크산톤계 화합물, 벤조인계 화합물, 트리아진계 화합물, 및 이들의 혼합물로 이루어진 군으로부터 선택되는 것을 특징으로 하는, 프린팅 프로세스용 광경화성 수지 조성물.The photopolymerization initiator is Irgacure 369, Igacure 907, Igacure184, Igacure 651, Igacure 819, Igacure 2959, Igacure 1800, Darocur 1173, Darocur 1116 and Darocur 1020, acetophenone compounds, benzophenone compounds, thioxanthone compounds, benzoxanthone compounds A photocurable resin composition for a printing process, which is selected from the group consisting of a phosphorus compound, a triazine compound, and a mixture thereof.
  17. 제1항에 있어서,The method of claim 1,
    상기 계면활성제가 실리콘계 계면활성제, 불소계 계면활성제 및 이들의 혼합물로 이루어진 군으로부터 선택되는 것을 특징으로 하는 프린팅 프로세스용 광경화성 수지 조성물.Said surfactant is selected from the group consisting of a silicone type surfactant, a fluorine type surfactant, and mixtures thereof, The photocurable resin composition for a printing process.
  18. 제1항에 있어서,The method of claim 1,
    상기 광경화성 수지 조성물이 용매를 추가로 포함하는 것을 특징으로 하는 프린팅 프로세스용 광경화성 수지 조성물.The photocurable resin composition for a printing process, wherein the photocurable resin composition further comprises a solvent.
  19. 제18항에 있어서,The method of claim 18,
    상기 용매가 아세토니트릴, 글리세롤, 디메틸설폭사이드, 나이트로메탄, 디메틸포르아마이드, 페놀, N-메틸피롤리돈, 피리딘 퍼플루오로트리부틸아민, 퍼플루오로데칼린, 2-부타논, 메틸렌카보네이트, 프로필렌카보네이트, 알코올류, 에테르류; 에스테르류, 에틸렌글리콜알킬에테르아세테이트류, 에틸렌글리콜알킬에테르프로피오네이트류, 에틸렌글리콜모노알킬에테르류, 디에틸렌글리콜알킬에테르류, 프로필렌글리콜알킬에테르아세테이트류, 프로필렌글리콜알킬에테르프로피오네이트류, 프로필렌글리콜모노알킬에테르류, 디프로필렌글리콜알킬에테르류, 부틸렌글리콜모노메틸에테르류, 디부틸렌글리콜알킬에테르류, 및 이들의 혼합물로 이루어진 군으로부터 선택되는 것을 특징으로 하는 프린팅 프로세스용 광경화성 수지 조성물.The solvent is acetonitrile, glycerol, dimethyl sulfoxide, nitromethane, dimethyl formamide, phenol, N-methylpyrrolidone, pyridine perfluorotributylamine, perfluoro decalin, 2-butanone, methylene carbonate, propylene Carbonates, alcohols, ethers; Esters, ethylene glycol alkyl ether acetates, ethylene glycol alkyl ether propionates, ethylene glycol monoalkyl ethers, diethylene glycol alkyl ethers, propylene glycol alkyl ether acetates, propylene glycol alkyl ether propionates, propylene Glycol monoalkyl ethers, dipropylene glycol alkyl ethers, butylene glycol monomethyl ethers, dibutylene glycol alkyl ethers, and mixtures thereof, the photocurable resin composition for a printing process .
  20. 제1항에 있어서,The method of claim 1,
    상기 광경화성 수지 조성물이 25℃에 있어서 2 mPa.s 내지 25 mPa.s의 점도를 갖는 것을 특징으로 하는 프린팅 프로세스용 광경화성 수지 조성물.The photocurable resin composition has a viscosity of 2 mPa · s to 25 mPa · s at 25 ° C. The photocurable resin composition for a printing process.
  21. 상기 제1항에 따른 프린팅 프로세스용 광경화성 수지 조성물을 기판에 도포하고 노광하는 단계를 포함하는 프린팅 프로세스용 보호막의 제조방법.A method of manufacturing a protective film for a printing process comprising applying and exposing a photocurable resin composition for a printing process for a printing process to a substrate.
  22. 상기 제1항에 따른 프린팅 프로세스용 광경화성 수지 조성물을 기판에 도포하고 임프린트 리소그래피 또는 롤 프린트 공정을 이용하여 도막을 형성한 다음, 노광하는 단계를 포함하는 미세패턴의 제조방법.A method of manufacturing a micropattern comprising applying a photocurable resin composition for a printing process according to claim 1 to a substrate, forming a coating film by using an imprint lithography or roll printing process, and then exposing it.
  23. 상기 제21항 및 제22항에 따른 제조방법에 의해 제조된 보호막 또는 미세패턴.A protective film or fine pattern produced by the manufacturing method according to claim 21 and 22.
PCT/KR2011/009635 2010-12-20 2011-12-14 Photo-curable resin composition for printing process WO2012086959A2 (en)

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