WO2012083621A1 - 化学机械抛光设备及其预热方法 - Google Patents

化学机械抛光设备及其预热方法 Download PDF

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Publication number
WO2012083621A1
WO2012083621A1 PCT/CN2011/072587 CN2011072587W WO2012083621A1 WO 2012083621 A1 WO2012083621 A1 WO 2012083621A1 CN 2011072587 W CN2011072587 W CN 2011072587W WO 2012083621 A1 WO2012083621 A1 WO 2012083621A1
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Prior art keywords
polishing pad
polishing
deionized water
chemical mechanical
pad
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Ceased
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PCT/CN2011/072587
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English (en)
French (fr)
Inventor
杨涛
赵超
李俊峰
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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Priority to US13/142,714 priority Critical patent/US20120244784A1/en
Publication of WO2012083621A1 publication Critical patent/WO2012083621A1/zh
Anticipated expiration legal-status Critical
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/015—Temperature control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

Definitions

  • the present invention relates to the field of semiconductor devices, and more particularly to a chemical mechanical polishing apparatus and a preheating method thereof.
  • the chemical mechanical polishing (CMP) process is a planarization process. Since it was introduced into the integrated circuit manufacturing process in 1990, it has become a key process to promote the shrinking of integrated circuit technology nodes through continuous practice and development. At present, CMP has been widely used in shallow trench isolation planarization, oxide planarization, tungsten plug planarization, and copper interconnect planarization. In the CMP process, each time the formal wafer product is polished, different types of wafer control sheets are required to be preheated and polished on the polishing pad. The main purpose is to preheat the CMP equipment to make the temperature of the polishing pad. And the state is more stable, thus ensuring the stability of the CMP process when polishing the product wafer.
  • CMP chemical mechanical polishing
  • the present invention provides a chemical mechanical polishing apparatus, comprising: a polishing pad; Deionized water supply line; polishing liquid supply line; polishing pad modifier; also includes:
  • a heating device that heats deionized water flowing into the deionized water supply line; a temperature sensor that is adjacent to the polishing pad to detect a temperature of the polishing pad;
  • a preheating control system coupled to the temperature sensor, for controlling the deionized water supply line to spray the heated deionized water to the polishing pad, wherein the temperature detected by the temperature sensor reaches or exceeds a preheating
  • the deionized water supply line is closed, and the polishing liquid supply line is controlled to spray the polishing liquid to the polishing pad, and the polishing pad is activated to polish the polishing pad.
  • the heating device heats the deionized water to room temperature to 60 °C.
  • the end of the deionized water supply line has a nozzle, and the nozzle outlet is provided with a baffle.
  • the preset temperature is from room temperature to 60 °C.
  • the preheating control system controls the polishing pad modifier to polish the polishing pad for 20s to 60s.
  • the polishing pad modifier has a dimension in a radial direction of the polishing pad that is equal to or greater than a radius of the polishing pad.
  • the size of the polishing pad aligner in a radial direction of the polishing pad is smaller than a radius of the polishing pad.
  • the preheating control is used to systematically control movement of the polishing pad modifier along a radial direction of the polishing pad to achieve polishing of the polishing pad.
  • the preheat control system controls the polishing pad aligner to move uniformly or shift in a radial direction of the polishing pad.
  • the deionized water supply line and the polishing liquid supply line are provided with an electronically controlled valve member, and the electronically controlled valve member is connected to and controlled by the preheating control system.
  • the present invention also provides a preheating method for a chemical mechanical polishing apparatus, the chemical mechanical polishing apparatus comprising a polishing pad and a polishing pad modifier, the preheating method comprising:
  • the heated deionized water has a temperature of from room temperature to 60 °C.
  • the preset temperature is from room temperature to 60 °C.
  • the polishing pad of the polishing pad has a polishing time of the polishing pad of 20 s to 60 s.
  • the polishing pad modifier has a dimension in a radial direction of the polishing pad equal to or greater than a radius of the polishing pad, and the polishing pad modifier polishes the polishing pad comprises: polishing the polishing pad A pad corrector is pressed against the polishing pad to drive the polishing pad to rotate.
  • the size of the polishing pad aligner in a radial direction of the polishing pad is smaller than a radius of the polishing pad
  • the polishing pad modifier polishes the polishing pad, including: the polishing pad A modifier is pressed against the polishing pad to drive the polishing pad to rotate and drive the polishing pad modifier to move in a radial direction of the polishing pad.
  • the polishing pad aligner moves in a radial direction or a variable speed in a radial direction of the polishing pad.
  • the chemical mechanical polishing device of the technical solution comprises a polishing pad, a deionized water supply line, a polishing liquid supply line, and a polishing pad modifier, and further comprising: a heating device for flowing into the deionized water supply line Deionized water in the heating; a temperature sensor, adjacent to the polishing pad to detect the temperature of the polishing pad; a preheating control system coupled to the temperature sensor for controlling the deionized water supply line to the The polishing pad sprays the heated deionized water, and when the temperature detected by the temperature sensor reaches or exceeds a preset temperature, the deionized water supply line is closed, and the polishing liquid supply line is controlled to the polishing The pad sprays the polishing liquid while the polishing pad modifier is activated to polish the polishing pad.
  • the above chemical mechanical polishing equipment can complete the preheating process by polishing the polishing pad by using the heated deionized water and the polishing pad corrector, without using the wafer control sheet, and reducing the loss of the polishing liquid, the polishing pad, and the like. , which helps to reduce production costs.
  • the end of the deionized water supply line of the chemical mechanical polishing apparatus of the present technical solution has a nozzle, and the nozzle outlet is provided with a baffle plate, which can increase the spray range of the deionized water, and is beneficial for improving the preheating. effect.
  • the preheating method of the chemical mechanical polishing device of the technical solution comprises: first spraying the heated deionized water to the polishing pad; stopping spraying the deionized water when the temperature of the polishing pad reaches or exceeds the preset temperature, Spraying the polishing liquid onto the polishing pad and controlling the polishing pad to polish the polishing pad.
  • the above method firstly uses the heated deionized water to heat the polishing pad, and then the polishing pad is polished by the polishing pad corrector to quickly reach the working state, without using the wafer control sheet, and reducing the polishing liquid, the polishing pad and the like. The loss is beneficial to reduce production costs.
  • Figure 1 is a schematic structural view of an embodiment of a chemical mechanical polishing apparatus of the present invention
  • Figure 2 is a partial enlarged view of the nozzle in the chemical mechanical polishing apparatus shown in Figure 1;
  • FIG. 3 is a schematic flow chart of a preheating method of the chemical mechanical polishing apparatus of the present invention.
  • the chemical mechanical polishing equipment in the prior art completes preheating by polishing a plurality of wafer control sheets, consumes a large amount of wafer control sheets, polishing liquids, etc., and reduces the use of polishing pads and polishing pad modifiers. Life expectancy leads to an increase in production costs.
  • the chemical mechanical polishing device of the technical solution comprises a polishing pad, a deionized water supply line, a polishing liquid supply line, and a polishing pad modifier, and further comprising: a heating device for flowing into the deionized water supply line Deionized water in the heating; a temperature sensor, adjacent to the polishing pad to detect the temperature of the polishing pad; a preheating control system coupled to the temperature sensor for controlling the deionized water supply line to the The polishing pad sprays the heated deionized water, and when the temperature detected by the temperature sensor reaches or exceeds a preset temperature, the deionized water supply line is closed, and the de-slurry supply line is controlled to A polishing pad sprays the polishing liquid and controls the polishing pad modifier to polish the polishing pad.
  • the above chemical mechanical polishing equipment can complete the preheating process by polishing the polishing pad by using the heated deionized water and the polishing pad, without using the wafer control sheet, and reducing the consumption of the polishing liquid, the polishing pad, and the like. Loss, which helps to reduce production costs.
  • the end of the deionized water supply line of the chemical mechanical polishing apparatus of the present technical solution has a nozzle, and the nozzle outlet is provided with a baffle plate, which can increase the spray range of the deionized water, and is beneficial for improving the preheating. effect.
  • the preheating method of the chemical mechanical polishing apparatus of the present technical solution comprises: first spraying heated deionized water onto the polishing pad; spraying the polishing pad when the temperature of the polishing pad reaches or exceeds a preset temperature Polishing the liquid and controlling the polishing pad modifier to polish the polishing pad.
  • the above method firstly uses the heated deionized water to heat the polishing pad, and then the polishing pad is polished by the polishing pad corrector to quickly reach the working state, without using the wafer control piece, and reducing the polishing liquid, polishing pad and the like. The loss is beneficial to reduce production costs.
  • the polishing pad 8 may be disposed on a polishing disk (not shown), and the polishing pad 8 is rotated together by the rotation of the polishing disk.
  • the deionized water supply line and the polishing liquid supply line are disposed on the deionized water and the polishing liquid supply cantilever 3.
  • the deionized water supply is not indicated in FIG. Piping and slurry supply lines.
  • An electric control valve member 4 is disposed on the deionized water supply line and the polishing liquid supply line, and the end of the deionized water supply line has a nozzle 1.
  • the electrically controlled valve member 4 can control the deionized water supply line and the polishing liquid supply line on the polishing liquid supply cantilever 3 to spray deionized water or polishing liquid onto the polishing pad 8 by switching the switch state, or The ion water supply line and the slurry supply line are completely closed, and the ionized water or the polishing liquid is not sprayed out.
  • FIG. 2 is a partial enlarged view of the nozzle 1 in the chemical mechanical polishing apparatus shown in FIG. 1.
  • the outlet of the nozzle 1 is provided with a baffle 13 having a smaller size than the baffle 13 The opening size of the nozzle 1.
  • the baffle 13 can increase the discharge angle of the deionized water and expand the spray range, which is advantageous for improving the preheating effect of the polishing pad.
  • the polishing head 7 is disposed above the polishing pad 8, and when chemical mechanical polishing is performed, a wafer is placed on the surface of the polishing pad 8, and a surface to be planarized in the wafer faces the polishing pad 8
  • the polishing head 7 is pressed against the surface of the wafer by the mechanical transmission structure 12, and the polishing disk drives the polishing pad 8 to rotate to realize polishing of the wafer.
  • the polishing pad modifier 2 is disposed above the polishing pad 8 through the cantilever 11 and is pressed on the polishing pad 8 by the cantilever 11 when in use, while driving the polishing disk to drive the polishing pad 8 to rotate. Abrading of the polishing pad 8 is achieved.
  • the heating device 5 heats the deionized water flowing into the deionized water supply line, and heats the deionized water to room temperature to 60 ° C, wherein the room temperature refers to a temperature condition of 18 ° C to 25 ° C .
  • the temperature sensor 6 is disposed near the polishing pad 8 to detect the temperature of the polishing pad 8.
  • the temperature sensor 6 may be an infrared temperature sensor disposed at a position adjacent to the polishing pad 8 of the mechanical transmission structure 12 coupled to the polishing head 7.
  • the preheating control system 10 connects the electronically controlled valve member 4 and the temperature sensor 6 via a signal control route 9,
  • the warm-up control system 10 can be a computer-based control system.
  • the corresponding valve member of the deionized water supply line in the electronic control valve member 4 is opened, and the deionized water supply line sprays the deionized water heated by the heating device 5 to the polishing pad 8; While the heated deionized water is sprayed, the preheating control system 10 monitors the temperature signal transmitted by the temperature sensor 6, and when the temperature of the polishing pad 8 reaches a preset temperature, the deionized water supply tube is turned off.
  • the valve member, the polishing liquid supply line sprays the polishing liquid to the polishing pad 8, and controls the polishing pad aligner 2 to polish the polishing pad 8 to make the polishing pad 8
  • the surface quickly reaches the working state, and the polishing liquid is evenly distributed on the polishing pad 8.
  • the preset temperature is from room temperature to 60 ° C
  • the polishing pad modifier 2 has a polishing time of the polishing pad 8 of 20 s to 60 s. After the preheating process of the machine is finished, the product wafer can be placed on the polishing pad 8 to start the batch planarization process.
  • the size of the polishing pad 2 in the radial direction of the polishing pad 8 is equal to or greater than the radius of the polishing pad 8, that is, the radius of the polishing pad 2 to the polishing pad 8.
  • Full coverage the grinding process is implemented as follows: The polishing pad corrector 2 is pressed against the polishing pad 8 by the cantilever 11 and then the polishing pad 8 is driven to rotate to complete the polishing.
  • the size of the polishing pad modifier 2 in the radial direction of the polishing pad 8 may also be smaller than the radius of the polishing pad 8, that is, the polishing pad aligner 2 does not completely cover the polishing pad.
  • the radius of 8 is achieved in the following manner: The polishing pad corrector 2 is pressed against the polishing pad 8 by the cantilever 11, and then the polishing pad 8 is driven to rotate and the polishing pad modifier 2 is driven along the polishing pad 8.
  • the radial direction of movement, the movement can be uniform motion or variable speed motion to complete the grinding.
  • the polishing pad is heated, and then the polishing pad is polished by the polishing pad to make the polishing pad enter the working state quickly, because the wafer control piece is not consumed during the preheating process of the whole machine, and the polishing liquid and the polishing pad are lost. It is also small, which is advantageous in reducing production costs.
  • the embodiment further provides a preheating method for a chemical mechanical polishing apparatus.
  • the chemical mechanical polishing apparatus includes a polishing pad and a polishing pad modifier.
  • the schematic diagram of the preheating method is as shown in FIG. 3, and includes:
  • Step S11 spraying the polishing pad with heated deionized water
  • Step S12 when the temperature of the polishing pad reaches or exceeds a preset temperature, stopping spraying the deionized water, spraying the polishing liquid onto the polishing pad, and controlling the polishing pad modifier to polish the polishing pad.
  • step S11 is performed to spray heated deionized water to the polishing pad, and the temperature of the deionized water is from room temperature to 60 °C.
  • the inflowing deionized water may be heated by a heating device, which may be a heating device built in the chemical mechanical polishing device, such as the chemical mechanical polishing device in the foregoing embodiment; It may be an external heating device that supplies heated deionized water to the chemical mechanical polishing equipment after heating the deionized water.
  • step S12 when the temperature of the polishing pad reaches or exceeds the preset temperature, the spraying of the deionized water is stopped, the polishing liquid is sprayed onto the polishing pad, and the polishing pad modifier is controlled to polish the polishing pad.
  • the preset temperature may be from room temperature to 60 ° C in the present embodiment, and the grinding time is from 20 s to 60 s. After polishing, the surface of the polishing pad quickly enters the working state, and the polishing liquid is evenly distributed.
  • the size of the polishing pad aligner in the radial direction of the polishing pad is equal to or greater than the radius of the polishing pad, that is, the polishing pad aligner completely covers the radius of the polishing pad, and the polishing
  • the process is implemented as follows: The polishing pad modifier is pressed against the polishing pad, and then the polishing pad is driven to rotate to complete the polishing.
  • the size of the polishing pad modifier in the radial direction of the polishing pad is smaller than the radius of the polishing pad, that is, the polishing pad modifier does not completely cover the radius of the polishing pad, and the polishing process
  • the implementation is as follows: pressing the polishing pad modifier on the polishing pad, then driving the polishing pad to rotate and driving the polishing pad modifier to move in the radial direction of the polishing pad, and the movement mode can be uniform motion or variable speed movement, Finished polishing.
  • Various common chemical mechanical polishing processes in circuits such as chemical mechanical polishing in shallow trench isolation (STI), chemical mechanical polishing in oxide isolation (ILD), chemical mechanical polishing of tungsten (W), The chemical mechanical polishing process of copper (Cu), the chemical mechanical polishing process of polycrystalline silicon (poly), the chemical mechanical polishing process of metal gate, the chemical mechanical polishing process of poly poly polish, and the like.
  • Light processes such as 8-inch wafers, 12-inch wafers.
  • the preheating method of the chemical mechanical polishing apparatus of this embodiment can be applied to chemical mechanical polishing equipment of different manufacturers and different types, and has wide industrial applicability.
  • the chemical mechanical polishing apparatus of the present technical solution comprises a deionized water and a polishing liquid supply line for spraying the polishing water to the polishing pad, and a polishing pad assembly device disposed above the polishing pad,
  • the method further includes: a heating device for heating the deionized water flowing into the deionized water and the polishing liquid supply line; a temperature sensor adjacent to the polishing pad to detect the temperature of the polishing pad; a preheating control system, coupled to the temperature sensor, for controlling the deionized water and the polishing liquid supply line to spray the heated deionized water to the polishing pad, and the temperature detected by the temperature sensor reaches or
  • the deionized water and the polishing liquid supply line are controlled to spray the polishing liquid to the polishing pad and the polishing pad modifier is controlled to polish the polishing pad.
  • the above chemical mechanical polishing equipment can complete the preheating process by polishing the polishing pad by using the heated deionized water and the polishing pad corrector, without using the wafer control sheet, and reducing the loss of the polishing liquid, the polishing pad, and the like. , which helps to reduce production costs.
  • the end of the deionized water and the polishing liquid supply line of the chemical mechanical polishing device of the present technical solution has a nozzle, and the baffle is provided at the outlet of the nozzle, which can increase the spray range of the deionized water, which is advantageous for Improve the warm-up effect.
  • the preheating method of the chemical mechanical polishing apparatus of the present technical solution comprises: first spraying heated deionized water onto the polishing pad; spraying the polishing pad when the temperature of the polishing pad reaches or exceeds a preset temperature Polishing the liquid and controlling the polishing pad modifier to polish the polishing pad.
  • the above method firstly uses the heated deionized water to heat the polishing pad, and then the polishing pad is polished by the polishing pad corrector to quickly reach the working state, without using the wafer control piece, and reducing the polishing liquid, polishing pad and the like. The loss is beneficial to reduce production costs.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Description

化学机械抛光设备及其预热方法
本申请要求于 2010 年 12 月 21 日提交中国专利局、 申请号为 201010599278.7、 发明名称为 "化学机械抛光设备及其预热方法"的中国专利申 请的优先权， 其全部内容通过引用结合在本申请中。
技术领域
本发明涉及半导体设备领域，特别涉及一种化学机械抛光设备及其预热方 法。
背景技术
化学机械抛光（CMP) 工艺是一种平坦化工艺， 在 1990年被引入集成电 路制造工艺以来， 经过不断实践和发展， 已成为推动集成电路技术节点不断缩 小的关键工艺。 目前 CMP已经广泛应用在浅沟槽隔离平坦化，氧化物平坦化， 钨塞平坦化， 铜互连平坦化等工艺中。 在 CMP工艺中， 每次对正式晶圆产品 抛光之前，都需要用不同类型的晶圆控片在抛光垫上进行预热抛光， 主要目的 就是对 CMP设备进行机台预热， 使抛光垫的温度和状态更加稳定， 从而保证 抛光产品晶圆时， CMP工艺的稳定性。
现有技术在每次预热时， 根据不同类型的 CMP设备中抛光头的数量， 在 每个抛光垫上至少需要抛光 4片或 8片甚至更多的晶圆控片，以使得抛光垫的 温度上升至适当范围， 且其表面状态进入工作状态。 在芯片制造的实际 CMP 工艺中， 如果 CMP设备闲置半个小时以上， 一般都需要进行预热， 而后才能 开始平坦化正式的产品晶圆。 众所周知， CMP工艺在整个集成电路制造过程 中属于高成本工艺， 这种高成本主要来自平坦化过程中对各种研磨耗材的损 耗， 包括抛光垫， 抛光液， 抛光垫修正器等。 因此 CMP设备的预热会不停消 耗晶圆控片和抛光液， 并降低抛光垫和抛光垫修正器的使用寿命。这些损耗最 终都会折算均摊到正式的产品晶圆的成本中， 这也是 CMP工艺成本居高不下 的主要原因之一。
发明内容 种耗材的损耗过高， 增加了生产成本。
为解决上述问题， 本发明提供了一种化学机械抛光设备， 包括： 抛光垫； 去离子水供应管路； 抛光液供应管路； 抛光垫修正器； 还包括：
加热装置， 对流入所述去离子水供应管路中的去离子水进行加热； 温度传感器， 靠近所述抛光垫以检测所述抛光垫的温度；
预热控制系统， 与所述温度传感器相连， 用于控制所述去离子水供应管路 向所述抛光垫喷淋经加热的去离子水，在所述温度传感器检测到的温度达到或 高于预设温度时， 关闭所述去离子水供应管路，控制所述抛光液供应管路向所 述抛光垫喷淋抛光液， 同时启动所述抛光垫爹正器对所述抛光垫进行打磨。
可选的， 所述加热装置将所述去离子水加热到室温至 60°C。
可选的， 所述去离子水供应管路的端部具有喷嘴， 所述喷嘴出口处设置有 挡板。
可选的， 所述预设温度为室温至 60 °C。
可选的， 所述预热控制系统控制所述抛光垫修正器对所述抛光垫打磨 20s 至 60s。
可选的，所述抛光垫修正器在所述抛光垫的径向方向的尺寸等于或大于所 述抛光垫的半径。
可选的，所述抛光垫爹正器在所述抛光垫的径向方向的尺寸小于所述抛光 垫的半径。
可选的，所述预热控制用于系统控制所述抛光垫修正器沿所述抛光垫的径 向方向运动， 以实现对所述抛光垫的打磨。
可选的，所述预热控制系统控制所述抛光垫爹正器沿所述抛光垫的径向方 向匀速运动或变速运动。
可选的， 所述去离子水供应管路和抛光液供应管路上设置有电控阀件， 所 述电控阀件与所述预热控制系统相连并受其控制。
本发明还提供了一种化学机械抛光设备的预热方法，所述化学机械抛光设 备包括抛光垫和抛光垫修正器， 所述预热方法包括：
向所述抛光垫喷淋经加热的去离子水；
在所述抛光垫的温度达到或高于预设温度时，停止喷淋去离子水， 向所述 抛光垫喷淋抛光液并控制所述抛光垫爹正器对所述抛光垫进行打磨。
可选的， 所述经加热的去离子水的温度为室温至 60°C。
可选的， 所述预设温度为室温至 60 °C。 可选的， 所述抛光垫爹正器对所述抛光垫的打磨时间为 20s至 60s。
可选的，所述抛光垫修正器在所述抛光垫的径向方向的尺寸等于或大于所 述抛光垫的半径，所述抛光垫修正器对所述抛光垫进行打磨包括： 将所述抛光 垫修正器按压在所述抛光垫上， 驱动所述抛光垫旋转。
可选的，所述抛光垫爹正器在所述抛光垫的径向方向的尺寸小于所述抛光 垫的半径， 所述抛光垫修正器对所述抛光垫进行打磨包括： 将所述抛光垫修正 器按压在所述抛光垫上，驱动所述抛光垫旋转并驱动所述抛光垫修正器沿所述 抛光塾的径向方向运动。
可选的， 所述抛光垫爹正器沿所述抛光垫的径向方向勾速运动或变速运 动。
与现有技术相比， 本发明的技术方案有如下优点：
本技术方案的化学机械抛光设备包括抛光垫， 去离子水供应管路，抛光液 供应管路， 以及抛光垫修正器， 此外还包括： 加热装置， 用于对流入所述去离 子水供应管路中的去离子水进行加热； 温度传感器， 靠近所述抛光垫以检测所 述抛光垫的温度； 预热控制系统， 与所述温度传感器相连， 用于控制所述去离 子水供应管路向所述抛光垫喷淋经加热的去离子水，在所述温度传感器检测到 的温度达到或高于预设温度时， 关闭所述去离子水供应管路，控制所述抛光液 供应管路向所述抛光垫喷淋抛光液，同时启动所述抛光垫修正器对所述抛光垫 进行打磨。上述化学机械抛光设备能够通过使用加热后的去离子水和抛光垫修 正器对抛光垫的打磨，来完成预热过程，不需要使用晶圆控片，降低了抛光液、 抛光垫等耗材的损耗， 有利于降低生产成本。
进一步的，本技术方案的化学机械抛光设备的去离子水供应管路的端部具 有喷嘴， 所述喷嘴出口处设置有挡板， 能够增大去离子水的喷淋范围， 有利于 改善预热效果。
本技术方案的化学机械抛光设备的预热方法包括：首先向抛光垫喷淋经加 热的去离子水； 在所述抛光垫的温度达到或高于预设温度时，停止喷淋去离子 水， 向所述抛光垫喷淋抛光液并控制所述抛光垫爹正器对所述抛光垫进行打 磨。上述方法首先使用经加热的去离子水对抛光垫进行升温，之后再通过抛光 垫修正器的打磨使抛光垫快速达到工作状态， 不需要使用晶圆控片， 降低了抛 光液、 抛光垫等耗材的损耗， 有利于降低生产成本。 附图说明
图 1是本发明化学机械抛光设备的实施例的结构示意图；
图 2是图 1所示的化学机械抛光设备中的喷嘴的局部放大图；
图 3是本发明化学机械抛光设备的预热方法的流程示意图。
具体实施方式
现有技术中的化学机械抛光设备通过对多片晶圆控片的抛光来完成预 热， 对晶圆控片、 抛光液等的消耗较大， 而且会降低抛光垫、 抛光垫修正器的 使用寿命， 导致生产成本上升。
本技术方案的化学机械抛光设备包括抛光垫， 去离子水供应管路， 抛光 液供应管路， 以及抛光垫修正器， 此外还包括： 加热装置， 用于对流入所述去 离子水供应管路中的去离子水进行加热； 温度传感器， 靠近所述抛光垫以检测 所述抛光垫的温度； 预热控制系统， 与所述温度传感器相连， 用于控制所述去 离子水供应管路向所述抛光垫喷淋经加热的去离子水，在所述温度传感器检测 到的温度达到或高于预设温度时， 关闭所述去离子水供应管路，控制所述去抛 光液供应管路向所述抛光垫喷淋抛光液并控制所述抛光垫修正器对所述抛光 垫进行打磨。上述化学机械抛光设备能够通过使用加热后的去离子水和抛光垫 爹正器对抛光垫的打磨， 来完成预热过程， 不需要使用晶圆控片， 降低了抛光 液、 抛光垫等耗材的损耗， 有利于降低生产成本。
进一步的， 本技术方案的化学机械抛光设备的去离子水供应管路的端部 具有喷嘴， 所述喷嘴出口处设置有挡板， 能够增大去离子水的喷淋范围， 有利 于改善预热效果。
本技术方案的化学机械抛光设备的预热方法包括： 首先向抛光垫喷淋经 加热的去离子水； 在所述抛光垫的温度达到或高于预设温度时， 向所述抛光垫 喷淋抛光液并控制所述抛光垫修正器对所述抛光垫进行打磨。上述方法首先使 用经加热的去离子水对抛光垫进行升温，之后再通过抛光垫修正器的打磨使抛 光垫快速达到工作状态， 不需要使用晶圆控片， 降低了抛光液、抛光垫等耗材 的损耗， 有利于降低生产成本。
为使本发明的上述目的、 特征和优点能够更为明显易懂， 下面结合附图 对本发明的具体实施方式做详细的说明。
在以下描述中阐述了具体细节以便于充分理解本发明。 但是本发明能够 以多种不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本发 明内涵的情况下做类似推广。 因此本发明不受下面公开的具体实施方式的限 制。 括： 抛光垫 8、 抛光头 7、 抛光垫修正器 2、 去离子水供应管路、 抛光液供应管 路、 加热装置 5、 温度传感器 6和预热控制系统 10。
其中， 抛光垫 8可以设置在抛光盘（图中未示出）上， 由抛光盘的旋转带 动所述抛光垫 8随之一起旋转。
所述去离子水供应管路和抛光液供应管路设置在去离子水及抛光液供应 悬臂 3上， 为了清楚的说明本实施例的方案， 图 1中并未标示出所述去离子水供 应管路和抛光液供应管路。所述去离子水供应管路和抛光液供应管路上设置有 电控阀件 4, 所述去离子水供应管路的端部具有喷嘴 1。 所述电控阀件 4可以通 过切换开关状态控制所述抛光液供应悬臂 3上的去离子水供应管路和抛光液供 应管路向所述抛光垫 8上喷淋去离子水或抛光液， 或是完全关闭所述离子水供 应管路和抛光液供应管路， 并不喷出去离子水或抛光液。
结合图 2, 图 2为图 1所示的化学机械抛光设备中喷嘴 1的局部放大图， 作 为一个优选的实施例， 所述喷嘴 1的出口处设置有挡板 13 , 挡板 13的尺寸小于 喷嘴 1的开口尺寸。 挡板 13能够增大去离子水的喷出角度， 扩大喷射范围， 有 利于改善研磨垫的预热效果。
所述抛光头 7设置在所述抛光垫 8的上方， 在进行化学机械抛光时， 将晶 圆放置在所述抛光垫 8的表面上， 晶圆中待平坦化的表面朝向所述抛光垫 8,抛 光头 7在机械传动结构 12的带动下按压在所述晶圆的表面上， 同时抛光盘带动 抛光垫 8旋转， 实现晶圆的抛光。
所述抛光垫修正器 2通过悬臂 11设置在所述抛光垫 8的上方，在使用时在悬 臂 11的带动下按压在所述抛光垫 8上， 同时驱动所述抛光盘带动抛光垫 8旋转， 实现对抛光垫 8的打磨。
所述加热装置 5对流入所述去离子水供应管路中的去离子水进行加热， 将 去离子水加热到室温至 60 °C , 其中室温指的是 18 °C至 25 °C的温度条件。
所述温度传感器 6设置于抛光垫 8附近， 以检测抛光垫 8的温度。 在一具体 实施例中， 所述温度传感器 6可以是红外线温度传感器，设置在与抛光头 7相连 的机械传动结构 12的靠近抛光垫 8的位置。
所述预热控制系统 10通过信号控制路线 9连接电控阀件 4和温度传感器 6, 在一具体实施例中， 所述预热控制系统 10可以是基于计算机的控制系统。在预 热过程开始时， 开启电控阀件 4中去离子水供应管路对应的阀件， 所述去离子 水供应管路向所述抛光垫 8喷淋经过加热装置 5加热的去离子水；在喷淋经加热 的去离子水的同时， 预热控制系统 10监控所述温度传感器 6传输的温度信号， 在所述抛光垫 8的温度达到预设温度时， 关闭所述去离子水供应管路， 具体的， 阀件， 所述抛光液供应管路向所述抛光垫 8喷淋抛光液， 并控制所述抛光垫爹 正器 2对抛光垫 8进行打磨， 以使所述抛光垫 8的表面快速达到工作状态， 并使 得抛光液在抛光垫 8上均勾分布。 所述预设温度为室温至 60 °C , 所述抛光垫修 正器 2对抛光垫 8的打磨时间为 20s至 60s。 在机台预热过程结束后， 可以将产品 晶圆放置在抛光垫 8上， 开始批量的平坦化过程。
在一具体实施例中， 所述抛光垫^ ί 正器 2在抛光垫 8的径向方向的尺寸等 于或大于所述抛光垫 8的半径， 即抛光垫爹正器 2对抛光垫 8的半径全覆盖， 所 述打磨过程的实现方式如下： 通过悬臂 11带动所述抛光垫修正器 2按压在抛光 垫 8上， 之后驱动抛光垫 8旋转， 完成打磨。
根据具体实施例的不同， 所述抛光垫修正器 2在抛光垫 8的径向方向的尺 寸也可以小于所述抛光垫 8的半径， 即所述抛光垫爹正器 2并未全覆盖抛光垫 8 的半径， 所述打磨过程的实现方式如下： 通过悬臂 11带动所述抛光垫修正器 2 按压在抛光垫 8上，之后驱动抛光垫 8旋转并驱动所述抛光垫修正器 2沿抛光垫 8 的径向方向运动， 运动方式可以为匀速运动或变速运动， 以完成打磨。 对抛光垫进行加热，之后通过抛光垫爹正器对抛光垫的打磨使抛光垫快速进入 工作状态， 由于整个机台预热过程中并不消耗晶圆控片， 对抛光液、 抛光垫的 损耗也较小， 因而有利于降低生产成本。
本实施例还提供了一种化学机械抛光设备的预热方法， 所述化学机械抛 光设备包括抛光垫和抛光垫修正器， 该预热方法的流程示意图如图 3所示， 包 括：
步骤 S11 , 向所述抛光垫喷淋经加热的去离子水；
步骤 S12, 在所述抛光垫的温度达到或高于预设温度时， 停止喷淋去离子 水， 向所述抛光垫喷淋抛光液并控制所述抛光垫修正器对所述抛光垫进行打 磨。 首先执行步骤 Sll , 向抛光垫喷淋经加热的去离子水， 所述去离子水的温 度为室温至 60°C。在具体实施例中， 可以通过加热装置对流入的去离子水进行 加热， 所述加热装置可以是化学机械抛光设备内置的加热设备，如前述实施例 中的化学机械抛光设备； 所述加热装置也可以是外置的加热设备，在对去离子 水进行加热后再将经加热的去离子水提供至化学机械抛光设备。
之后执行步骤 S12, 在所述抛光垫的温度达到或高于预设温度时， 停止喷 淋去离子水， 向抛光垫喷淋抛光液并控制所述抛光垫修正器对抛光垫进行打 磨。 所述预设温度在本实施例中可以为室温至 60 °C , 打磨时间为 20s至 60s。 经 过打磨后，所述抛光垫的表面快速进入工作状态，而且抛光液得到了均匀分布。
在一具体实施例中， 所述抛光垫爹正器在抛光垫的径向方向的尺寸等于 或大于所述抛光垫的半径， 即抛光垫爹正器对抛光垫的半径全覆盖， 所述打磨 过程的实现方式如下： 将所述抛光垫修正器按压在抛光垫上，之后驱动抛光垫 旋转， 完成打磨。
根据具体实施例的不同， 所述抛光垫修正器在抛光垫的径向方向的尺寸 小于所述抛光垫的半径， 即所述抛光垫修正器并未全覆盖抛光垫的半径， 所述 打磨过程的实现方式如下： 将所述抛光垫修正器按压在抛光垫上，之后驱动抛 光垫旋转并驱动所述抛光垫修正器沿抛光垫的径向方向运动，运动方式可以为 匀速运动或变速运动， 以完成打磨。 成电路中各种常用的化学机械抛光工艺， 如浅沟槽隔离 （STI ) 中的化学机械 抛光工艺， 氧化物隔离 （ILD ) 中的化学机械抛光工艺， 钨（W ) 的化学机械 抛光工艺， 铜（Cu )的化学机械抛光工艺， 多晶硅（poly )的化学机械抛光工 艺， 金属栅（ metal gate )的化学机械抛光工艺， 打开多晶硅栅顶（ poly opening polish ) 的化学机械抛光工艺等等。 光工艺， 如 8寸晶圆、 12寸晶圆。 本实施例的化学机械抛光设备的预热方法可 以适用于不同厂家、 不同型号的化学机械抛光设备， 具有广泛的工业实用性。
综上， 本技术方案的化学机械抛光设备包括向抛光垫喷淋去萬子水及抛 光液的去离子水及抛光液供应管路，以及设置于所述抛光垫上方的抛光垫爹正 器， 此外还包括： 加热装置， 用于对流入所述去离子水及抛光液供应管路中的 去离子水进行加热； 温度传感器， 靠近所述抛光垫以检测所述抛光垫的温度； 预热控制系统， 与所述温度传感器相连， 用于控制所述去离子水及抛光液供应 管路向所述抛光垫喷淋经加热的去离子水，在所述温度传感器检测到的温度达 到或高于预设温度时，控制所述去离子水及抛光液供应管路向所述抛光垫喷淋 抛光液并控制所述抛光垫修正器对所述抛光垫进行打磨。上述化学机械抛光设 备能够通过使用加热后的去离子水和抛光垫修正器对抛光垫的打磨，来完成预 热过程， 不需要使用晶圆控片， 降低了抛光液、 抛光垫等耗材的损耗， 有利于 降低生产成本。
进一步的， 本技术方案的化学机械抛光设备的去离子水及抛光液供应管 路的端部具有喷嘴， 所述喷嘴出口处设置有挡板， 能够增大去离子水的喷淋范 围， 有利于改善预热效果。
本技术方案的化学机械抛光设备的预热方法包括： 首先向抛光垫喷淋经 加热的去离子水； 在所述抛光垫的温度达到或高于预设温度时， 向所述抛光垫 喷淋抛光液并控制所述抛光垫修正器对所述抛光垫进行打磨。上述方法首先使 用经加热的去离子水对抛光垫进行升温，之后再通过抛光垫修正器的打磨使抛 光垫快速达到工作状态， 不需要使用晶圆控片， 降低了抛光液、抛光垫等耗材 的损耗， 有利于降低生产成本。
本发明虽然已以较佳实施例公开如上， 但其并不是用来限定本发明， 任 何本领域技术人员在不脱离本发明的精神和范围内，都可以利用上述揭示的方 法和技术内容对本发明技术方案做出可能的变动和修改， 因此， 凡是未脱离本 改、 等同变化及修饰， 均属于本发明技术方案的保护范围。

Claims

权 利 要 求
1、 一种化学机械抛光设备， 包括： 抛光垫； 去离子水供应管路； 抛光液 供应管路； 抛光垫修正器； 其特征在于， 还包括：
加热装置， 对流入所述去离子水供应管路中的去离子水进行加热； 温度传感器， 靠近所述抛光垫以检测所述抛光垫的温度；
预热控制系统， 与所述温度传感器相连， 用于控制所述去离子水供应管 路向所述抛光垫喷淋经加热的去离子水，在所述温度传感器检测到的温度达到 或高于预设温度时， 关闭所述去离子水供应管路，控制所述抛光液供应管路向 所述抛光垫喷淋抛光液， 同时启动所述抛光垫爹正器对所述抛光垫进行打磨。
2、 根据权利要求 1所述的化学机械抛光设备， 其特征在于， 所述加热装 置将所述去离子水加热到室温至 60°C。
3、 根据权利要求 1所述的化学机械抛光设备， 其特征在于， 所述去离子 水供应管路的端部具有喷嘴， 所述喷嘴出口处设置有挡板。
4、 根据权利要求 1所述的化学机械抛光设备， 其特征在于， 所述预设温 度为室温至 60°C。
5、 根据权利要求 1所述的化学机械抛光设备， 其特征在于， 所述预热控 制系统控制所述抛光垫修正器对所述抛光垫打磨 20s至 60s。
6、 根据权利要求 1所述的化学机械抛光设备， 其特征在于， 所述抛光垫 修正器在所述抛光垫的径向方向的尺寸等于或大于所述抛光垫的半径。
7、 根据权利要求 1所述的化学机械抛光设备， 其特征在于， 所述抛光垫 爹正器在所述抛光垫的径向方向的尺寸小于所述抛光垫的半径。
8、 根据权利要求 7所述的化学机械抛光设备， 其特征在于， 所述预热控 制用于系统控制所述抛光垫爹正器沿所述抛光垫的径向方向运动，以实现对所 述抛光垫的打磨。
9、 根据权利要求 8所述的化学机械抛光设备， 其特征在于， 所述预热控 制系统控制所述抛光垫修正器沿所述抛光垫的径向方向匀速运动或变速运动。
10、 根据权利要求 1所述的化学机械抛光设备， 其特征在于， 所述去离子 水供应管路和抛光液供应管路上设置有电控阀件，所述电控阀件与所述预热控 制系统相连并受其控制。
11、一种化学机械抛光设备的预热方法，所述化学机械抛光设备包括抛光 垫和抛光垫修正器， 其特征在于， 包括： 向所述抛光垫喷淋经加热的去离子水；
在所述抛光垫的温度达到或高于预设温度时， 停止喷淋去离子水， 向所 述抛光垫喷淋抛光液并控制所述抛光垫爹正器对所述抛光垫进行打磨。
12、 根据权利要求 11所述的化学机械抛光设备的预热方法， 其特征在于， 所述经加热的去离子水的温度为室温至 60 °C。
13、 根据权利要求 11所述的化学机械抛光设备的预热方法， 其特征在于， 所述预设温度为室温至 60°C。
14、 根据权利要求 11所述的化学机械抛光设备的预热方法， 其特征在于， 所述抛光垫爹正器对所述抛光垫的打磨时间为 20s至 60s。
15、 根据权利要求 11所述的化学机械抛光设备的预热方法， 其特征在于， 所述抛光垫爹正器在所述抛光垫的径向方向的尺寸等于或大于所述抛光垫的 半径， 所述抛光垫爹正器对所述抛光垫进行打磨包括： 将所述抛光垫爹正器按 压在所述抛光垫上， 驱动所述抛光垫旋转。
16、 根据权利要求 11所述的化学机械抛光设备的预热方法， 其特征在于， 所述抛光垫爹正器在所述抛光垫的径向方向的尺寸小于所述抛光垫的半径，所 述抛光垫修正器对所述抛光垫进行打磨包括：将所述抛光垫修正器按压在所述 抛光垫上，驱动所述抛光垫旋转并驱动所述抛光垫爹正器沿所述抛光垫的径向 方向运动。
17、 根据权利要求 16所述的化学机械抛光设备的预热方法， 其特征在于， 所述抛光垫爹正器沿所述抛光垫的径向方向匀速运动或变速运动。
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