US20120244784A1 - Chemical-mechanical polishing tool and method for preheating the same - Google Patents
Chemical-mechanical polishing tool and method for preheating the same Download PDFInfo
- Publication number
- US20120244784A1 US20120244784A1 US13/142,714 US201113142714A US2012244784A1 US 20120244784 A1 US20120244784 A1 US 20120244784A1 US 201113142714 A US201113142714 A US 201113142714A US 2012244784 A1 US2012244784 A1 US 2012244784A1
- Authority
- US
- United States
- Prior art keywords
- polishing pad
- polishing
- preheating
- supply channel
- conditioner
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P80/00—Climate change mitigation technologies for sector-wide applications
- Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities
Definitions
- the present invention relates to the field of semiconductor tools, and particularly to a chemical-mechanical polishing tool and a method for preheating the same.
- CMP Chemical-Mechanical Polishing
- preheating of a CMP tool consumes dummy wafers and polishing slurry, and reduces the service life of the polishing pad and the polishing pad conditioner, which inevitably will all be reflected on the cost of product wafers; this is one of the main reasons that CMP is costly.
- a problem to be solved by the present invention is that the conventional method for preheating a chemical-mechanical polishing tool has very high consumption of polishing consumables and thereby increases production cost.
- the present invention provides a chemical-mechanical polishing tool, including: a polishing pad, a deionized (DI) water supply channel, a polishing slurry supply channel and a polishing pad conditioner, wherein the chemical-mechanical polishing tool further includes:
- a heating apparatus adapted to heat DI water fed to the DI water supply channel
- a temperature sensor arranged close to the polishing pad to measure a temperature of the polishing pad
- a preheating control system connected to the temperature sensor, and adapted to control the DI water supply channel to spray the heated DI water to the polishing pad, and when the temperature measured by the temperature sensor is equal to or higher than a predetermined temperature, to close the DI water supply channel, control the polishing slurry supply channel to spray polishing slurry to the polishing pad, and startup the polishing pad conditioner to dress the polishing pad.
- the heating apparatus is adapted to heat the DI water to a temperature ranging from room temperature to 60° C.
- a nozzle is arranged at an end of the DI water supply channel, and a baffle is arranged at an outlet of the nozzle.
- the predetermined temperature ranges from room temperature to 60° C.
- the preheating control system is adapted to control the polishing pad conditioner to dress the polishing pad for 20 s to 60 s.
- the length of the polishing pad conditioner in a radial direction of the polishing pad is equal to or larger than a radius of the polishing pad.
- the length of the polishing pad conditioner in a radial direction of the polishing pad is smaller than a radius of the polishing pad.
- the preheating control system is adapted to control the polishing pad conditioner to move in a radial direction of the polishing pad, to realize dressing of the polishing pad.
- the preheating control system is adapted to control the polishing pad conditioner to move in a radial direction of the polishing pad at a constant speed or a variable speed.
- an electrically-controlled valve is arranged in the DI water supply channel and the polishing slurry supply channel, and the electrically-controlled valve is connected with the preheating control system and controlled by it.
- the present invention also provides a method for preheating a chemical-mechanical polishing tool, the chemical-mechanical polishing tool including a polishing pad and a polishing pad conditioner, wherein the method includes:
- the heated DI water has a temperature ranging from room temperature to 60° C.
- the predetermined temperature ranges from room temperature to 60° C.
- the time of the polishing pad conditioner dressing the polishing pad ranges from 20 s to 60 s.
- the length of the polishing pad conditioner in a radial direction of the polishing pad is equal to or larger than a radius of the polishing pad
- the polishing pad conditioner dressing the polishing pad includes: pressing the polishing pad conditioner on the polishing pad, and driving the polishing pad to rotate.
- the length of the polishing pad conditioner in a radial direction of the polishing pad is smaller than a radius of the polishing pad
- the polishing pad conditioner dressing the polishing pad includes: pressing the polishing pad conditioner on the polishing pad, driving the polishing pad to rotate, and driving the polishing pad conditioner to move in a radial direction of the polishing pad.
- the polishing pad conditioner moves in a radial direction of the polishing pad at a constant speed or a variable speed.
- the chemical-mechanical polishing tool of the technical solution includes: a polishing pad, a DI water supply channel, a polishing slurry supply channel and a polishing pad conditioner; and the chemical-mechanical polishing tool further includes: a heating apparatus, adapted to heat DI water fed to the DI water supply channel; a temperature sensor, arranged close to the polishing pad to measure a temperature of the polishing pad; and a preheating control system, connected to the temperature sensor, and adapted to control the DI water supply channel to spray the heated DI water to the polishing pad, and when the temperature measured by the temperature sensor is equal to or higher than a predetermined temperature, to close the DI water supply channel, control the polishing slurry supply channel to spray polishing slurry to the polishing pad, and startup the polishing pad conditioner to dress the polishing pad.
- a heating apparatus adapted to heat DI water fed to the DI water supply channel
- a temperature sensor arranged close to the polishing pad to measure a temperature of the polishing pad
- a preheating control system connected to the
- the chemical-mechanical polishing tool above performs preheating by using the heated DI water and the polishing pad conditioner dressing the polishing pad. Dummy wafers are no longer needed, and consumption of polishing consumables including polishing slurry and the polishing pad is reduced, thereby reducing production cost.
- the chemical-mechanical polishing tool of the technical solution has a nozzle arranged at an end of the DI water supply channel and a baffle arranged at an outlet of the nozzle, so that the spray range for the DI water can be increased, thereby improving preheating performance.
- the method for preheating a chemical-mechanical polishing tool of the technical solution includes: firstly, spraying heated DI water to the polishing pad; and when a temperature of the polishing pad is equal to or higher than a predetermined temperature, stopping spraying the DI water, spraying polishing slurry to the polishing pad and controlling the polishing pad conditioner to dress the polishing pad.
- the method above firstly heats the polishing pad using the heated DI water, then dresses the polishing pad by the polishing pad conditioner so that the polishing pad quickly reaches its operating condition. Dummy wafers are no longer needed, and consumption of polishing consumables including polishing slurry and the polishing pad is reduced, thereby reducing production cost.
- FIG. 1 is a structural diagram of a chemical-mechanical polishing tool according to an embodiment of the present invention
- FIG. 2 is a locally enlarged diagram illustrating a nozzle of the chemical-mechanical polishing tool shown in FIG. 1 ;
- FIG. 3 is a flow chart of a method for preheating a chemical-mechanical polishing tool according to the present invention.
- preheating of a chemical-mechanical polishing tool is performed by polishing plural dummy wafers, which has very high consumption of e.g. dummy wafers and polishing slurry, and may reduce the service life of the polishing pad and the polishing pad conditioner, and increase production cost.
- the chemical-mechanical polishing tool of the technical solution includes: a polishing pad, a deionized (DI) water supply channel, a polishing slurry supply channel and a polishing pad conditioner; and the chemical-mechanical polishing tool further includes: a heating apparatus, adapted to heat DI water fed to the DI water supply channel; a temperature sensor, arranged close to the polishing pad to measure a temperature of the polishing pad; and a preheating control system, connected to the temperature sensor, and adapted to control the DI water supply channel to spray the heated DI water to the polishing pad, and when the temperature measured by the temperature sensor is equal to or higher than a predetermined temperature, to close the DI water supply channel, control the polishing slurry supply channel to spray polishing slurry to the polishing pad, and startup the polishing pad conditioner to dress the polishing pad.
- DI deionized
- the chemical-mechanical polishing tool above performs preheating by using the heated DI water and the polishing pad conditioner dressing the polishing pad. Dummy wafers are no longer needed, and consumption of polishing consumables including polishing slurry and the polishing pad is reduced, thereby reducing production cost.
- the chemical-mechanical polishing tool of the technical solution has a nozzle arranged at an end of the DI water supply channel and a baffle arranged at an outlet of the nozzle, so that the spray range for the DI water can be increased, thereby improving preheating performance.
- the method for preheating a chemical-mechanical polishing tool of the technical solution includes: firstly, spraying heated DI water to the polishing pad; and when a temperature of the polishing pad is equal to or higher than a predetermined temperature, stopping spraying the DI water, spraying polishing slurry to the polishing pad and controlling the polishing pad conditioner to dress the polishing pad.
- the method above firstly heats the polishing pad using the heated DI water, then dresses the polishing pad by the polishing pad conditioner so that the polishing pad quickly reaches its operating condition. Dummy wafers are no longer needed, and consumption of polishing consumables including polishing slurry and the polishing pad is reduced, thereby reducing production cost.
- FIG. 1 shows a structural diagram of a chemical-mechanical polishing tool according to an embodiment of the present invention, which includes: a polishing pad 8 , a polishing head 7 , a polishing pad conditioner 2 , a DI water supply channel, a polishing slurry supply channel, a heating apparatus 5 , a temperature sensor 6 and a preheating control system 10 .
- the polishing pad 8 may be arranged on a polishing plate (not shown), and rotate as driven by the rotation of the polishing plate.
- the DI water supply channel and the polishing slurry supply channel are arranged on a beam 3 for DI water and polishing slurry supply.
- the DI water supply channel and the polishing slurry supply channel are not shown in FIG. 1 .
- An electrically-controlled valve 4 is arranged in the DI water supply channel and the polishing slurry supply channel, and a nozzle 1 is arranged at an end of the DI water supply channel. By switching between states, the electrically-controlled valve 4 can control the DI water supply channel or the polishing slurry supply channel on the beam 3 to spray DI water or polishing slurry, or, completely close the DI water supply channel and the polishing slurry supply channel so that the DI water or the polishing slurry is not sprayed.
- FIG. 2 a locally enlarged diagram illustrating a nozzle of the chemical-mechanical polishing tool shown in FIG. 1 .
- a baffle 13 is arranged at an outlet of the nozzle 1 , and the size of the baffle 13 is smaller than the size of the opening of the nozzle 1 .
- the baffle 13 can increase the spraying angle for the DI water and extend its spray range, thereby improving the performance of the preheating of the polishing pad.
- the polishing head 7 is arranged above the polishing pad 8 .
- the wafer is mounted on the surface of the polishing pad 8 , with its surface to be planarized faces the polishing pad 8 .
- the polishing head 7 presses on a surface of the wafer; meanwhile, the polishing plate drives the polishing pad 8 to rotate, thereby realizing polishing of the wafer.
- the polishing pad conditioner 2 is arranged above the polishing pad 8 via a beam 11 . Driven by the beam 11 , the polishing pad conditioner 2 presses on the polishing pad 8 ; meanwhile, the polishing plate drives the polishing pad 8 to rotate, thereby realizing dressing of the polishing pad 8 .
- the heating apparatus 5 heats the DI water fed to the DI water supply channel, to a temperature ranging from room temperature to 60° C.
- room temperature denotes a temperature range of 18° C. to 25° C.
- the temperature sensor 6 is arranged close to the polishing pad 8 , to measure the temperature of the polishing pad 8 .
- the temperature sensor 6 may be an infrared temperature sensor, arranged in a location on the mechanical drive mechanism 12 connected with the polishing head 7 where is close to the polishing pad 8 .
- the preheating control system 10 is connected to the electrically-controlled valve 4 and the temperature sensor 6 via a signal control line 9 .
- the preheating control system 10 may be a computer-based control system.
- the preheating control system 10 opens a valve member of the electrically-controlled valve 4 corresponding to the DI water supply channel so that the DI water supply channel sprays the DI water heated by the heating apparatus 5 to the polishing pad 8 ; while the heated DI water is being sprayed, the preheating control system 10 monitors a temperature signal transmitted from the temperature sensor 6 , and when the temperature of the polishing pad 8 reaches a predetermined temperature, closes the DI water supply channel, specifically, closes the valve member of the electrically-controlled valve 4 corresponding to the DI water supply channel and opens a valve member corresponding to the polishing slurry supply channel so that the polishing slurry supply channel sprays the polishing slurry to the polishing pad 8 , and controls the polishing pad conditioner 2 to dress the polishing pad 8
- the predetermined temperature ranges from room temperature to 60° C., and the time of the polishing pad conditioner 2 dressing the polishing pad 8 is 20 s to 60 s.
- product wafers can be mounted on the polishing pad 8 , and batch planarization process starts.
- the length of the polishing pad conditioner 2 in a radial direction of the polishing pad 8 is equal to or larger than the radius of the polishing pad 8 , that is, the polishing pad conditioner 2 fully covers the radius of the polishing pad 8 .
- the dressing process is realized by: driving the polishing pad conditioner 2 by the beam 11 to press on the polishing pad 8 , and driving the polishing pad 8 to rotate.
- the length of the polishing pad conditioner 2 in a radial direction of the polishing pad 8 may be smaller than the radius of the polishing pad 8 , that is, the polishing pad conditioner 2 does not fully cover the radius of the polishing pad 8 .
- the dressing process may be realized by: driving the polishing pad conditioner 2 by the beam 11 to press on the polishing pad 8 , then driving the polishing pad 8 to rotate and driving the polishing pad conditioner 2 to move in a radial direction of the polishing pad 8 , at a constant speed or at a variable speed.
- the polishing pad is heated using the heated DI water, then the polishing pad is dressed by the polishing pad conditioner so that the polishing pad quickly reaches its operating condition.
- the whole preheating process does not consume dummy wafers and has low consumption of polishing slurry and the polishing pad, thereby reducing production cost.
- An embodiment of the present invention also provides a method for preheating a chemical-mechanical polishing tool, the chemical-mechanical polishing tool including a polishing pad and a polishing pad conditioner. As shown in FIG. 3 , the method includes:
- step S 11 spraying heated DI water to the polishing pad
- step S 12 when a temperature of the polishing pad is equal to or higher than a predetermined temperature, stopping spraying the DI water, spraying polishing slurry to the polishing pad and controlling the polishing pad conditioner to dress the polishing pad.
- step S 11 is performed: spraying heated DI water to the polishing pad.
- the temperature of the DI water ranges from room temperature to 60° C.
- the fed DI water may be heated by a heating apparatus.
- the heating apparatus can be a built-in heating apparatus of a chemical-mechanical polishing tool, e.g. a chemical-mechanical polishing tool according to the embodiment described above.
- the heating apparatus may also be an external heating apparatus, which heats DI water and then provides the heated DI water to a chemical-mechanical polishing tool.
- step S 12 is performed: when a temperature of the polishing pad is equal to or higher than a predetermined temperature, stopping spraying the DI water, spraying polishing slurry to the polishing pad and controlling the polishing pad conditioner to dress the polishing pad.
- the predetermined temperature in this embodiment may range from room temperature to 60° C., and the dressing time is 20 s to 60 s. After dressing, the surface of the polishing pad quickly reaches its operating condition and the polishing slurry is evenly distributed.
- the length of the polishing pad conditioner in a radial direction of the polishing pad is equal to or larger than the radius of the polishing pad, that is, the polishing pad conditioner fully covers the radius of the polishing pad.
- the dressing process is realized by: pressing the polishing pad conditioner on the polishing pad, and driving the polishing pad to rotate.
- the length of the polishing pad conditioner in a radial direction of the polishing pad may be smaller than the radius of the polishing pad, that is, the polishing pad conditioner does not fully cover the radius of the polishing pad.
- the dressing process may be realized by: pressing the polishing pad conditioner on the polishing pad, then driving the polishing pad to rotate and driving the polishing pad conditioner to move in a radial direction of the polishing pad, at a constant speed or at a variable speed.
- Applications of the chemical-mechanical polishing tool and its preheating method of the embodiment include, but are not limited to, various CMP processes in the integrated circuit industry, e.g., the CMP process in STI, the CMP process in oxide isolation (ILD), the CMP process for tungsten (W), the CMP process for copper (Cu), the CMP process for polysilicon (poly), the CMP process for metal gates, the CMP process for poly opening polish (POP).
- various CMP processes in the integrated circuit industry e.g., the CMP process in STI, the CMP process in oxide isolation (ILD), the CMP process for tungsten (W), the CMP process for copper (Cu), the CMP process for polysilicon (poly), the CMP process for metal gates, the CMP process for poly opening polish (POP).
- CMP processes in the integrated circuit industry e.g., the CMP process in STI, the CMP process in oxide isolation (ILD), the CMP process for tungsten (W), the CMP process for copper (
- the chemical-mechanical polishing tool of the embodiment can be applied in CMP process for wafers of a variety of sizes, e.g. 8 inches or 12 inches.
- the method for preheating a chemical-mechanical polishing tool of the embodiment can be applied with CMP tools made by a variety of manufactures or of a variety of types, and hence has good industrial practicability.
- the chemical-mechanical polishing tool of the technical solution includes: a polishing pad, a DI water supply channel, a polishing slurry supply channel and a polishing pad conditioner; and the chemical-mechanical polishing tool further includes: a heating apparatus, adapted to heat DI water fed to the DI water supply channel; a temperature sensor, arranged close to the polishing pad to measure a temperature of the polishing pad; and a preheating control system, connected to the temperature sensor, and adapted to control the DI water supply channel to spray the heated DI water to the polishing pad, and when the temperature measured by the temperature sensor is equal to or higher than a predetermined temperature, to close the DI water supply channel, control the polishing slurry supply channel to spray polishing slurry to the polishing pad, and startup the polishing pad conditioner to dress the polishing pad.
- a heating apparatus adapted to heat DI water fed to the DI water supply channel
- a temperature sensor arranged close to the polishing pad to measure a temperature of the polishing pad
- a preheating control system connected to the
- the chemical-mechanical polishing tool above performs preheating by using the heated DI water and the polishing pad conditioner dressing the polishing pad. Dummy wafers are no longer needed, and consumption of polishing consumables including polishing slurry and the polishing pad is reduced, thereby reducing production cost.
- the chemical-mechanical polishing tool of the technical solution has a nozzle arranged at an end of the DI water supply channel and a baffle arranged at an outlet of the nozzle, so that the spray range for the DI water can be increased, thereby improving preheating performance.
- the method for preheating a chemical-mechanical polishing tool of the technical solution includes: firstly, spraying heated DI water to the polishing pad; and when a temperature of the polishing pad is equal to or higher than a predetermined temperature, stopping spraying the DI water, spraying polishing slurry to the polishing pad and controlling the polishing pad conditioner to dress the polishing pad.
- the method above firstly heats the polishing pad using the heated DI water, then dresses the polishing pad by the polishing pad conditioner so that the polishing pad quickly reaches its operating condition. Dummy wafers are no longer needed, and consumption of polishing consumables including polishing slurry and the polishing pad is reduced, thereby reducing production cost.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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CN201010599278.7A CN102528651B (zh) | 2010-12-21 | 2010-12-21 | 化学机械抛光设备及其预热方法 |
CN201010599278.7 | 2010-12-21 | ||
PCT/CN2011/072587 WO2012083621A1 (zh) | 2010-12-21 | 2011-04-11 | 化学机械抛光设备及其预热方法 |
Publications (1)
Publication Number | Publication Date |
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US20120244784A1 true US20120244784A1 (en) | 2012-09-27 |
Family
ID=46313085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US13/142,714 Abandoned US20120244784A1 (en) | 2010-12-21 | 2011-04-11 | Chemical-mechanical polishing tool and method for preheating the same |
Country Status (3)
Country | Link |
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US (1) | US20120244784A1 (zh) |
CN (1) | CN102528651B (zh) |
WO (1) | WO2012083621A1 (zh) |
Cited By (4)
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JP2017019067A (ja) * | 2015-07-14 | 2017-01-26 | 株式会社ディスコ | 研削装置のアイドリング方法 |
CN113732936A (zh) * | 2021-05-08 | 2021-12-03 | 清华大学 | 一种抛光温度控制装置、化学机械抛光系统和方法 |
WO2021257254A1 (en) * | 2020-06-17 | 2021-12-23 | Globalwafers Co., Ltd. | Semiconductor substrate polishing with polishing pad temperature control |
US20220305611A1 (en) * | 2021-03-26 | 2022-09-29 | Kctech Co., Ltd. | Substrate polishing system and substrate polishing method |
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CN103639886A (zh) * | 2013-11-29 | 2014-03-19 | 上海华力微电子有限公司 | 用于w-cmp的化学机械研磨装置及研磨方法 |
TWI565557B (zh) * | 2014-09-24 | 2017-01-11 | 力晶科技股份有限公司 | 化學機械研磨製程 |
US11103970B2 (en) * | 2017-08-15 | 2021-08-31 | Taiwan Semiconductor Manufacturing Co, , Ltd. | Chemical-mechanical planarization system |
CN110948376B (zh) * | 2019-10-24 | 2020-10-20 | 清华大学 | 一种用于化学机械抛光承载头的驱动装置 |
CN110948379B (zh) * | 2019-10-24 | 2020-10-20 | 清华大学 | 一种化学机械抛光装置 |
CN115431153A (zh) * | 2022-08-22 | 2022-12-06 | 中国科学院上海光学精密机械研究所 | 一种用于光学抛光加工的修盘、注液、清洁三位一体式装置及方法 |
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JP2017019067A (ja) * | 2015-07-14 | 2017-01-26 | 株式会社ディスコ | 研削装置のアイドリング方法 |
WO2021257254A1 (en) * | 2020-06-17 | 2021-12-23 | Globalwafers Co., Ltd. | Semiconductor substrate polishing with polishing pad temperature control |
US20220305611A1 (en) * | 2021-03-26 | 2022-09-29 | Kctech Co., Ltd. | Substrate polishing system and substrate polishing method |
CN113732936A (zh) * | 2021-05-08 | 2021-12-03 | 清华大学 | 一种抛光温度控制装置、化学机械抛光系统和方法 |
Also Published As
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CN102528651B (zh) | 2014-10-22 |
WO2012083621A1 (zh) | 2012-06-28 |
CN102528651A (zh) | 2012-07-04 |
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