US20120244784A1 - Chemical-mechanical polishing tool and method for preheating the same - Google Patents

Chemical-mechanical polishing tool and method for preheating the same Download PDF

Info

Publication number
US20120244784A1
US20120244784A1 US13/142,714 US201113142714A US2012244784A1 US 20120244784 A1 US20120244784 A1 US 20120244784A1 US 201113142714 A US201113142714 A US 201113142714A US 2012244784 A1 US2012244784 A1 US 2012244784A1
Authority
US
United States
Prior art keywords
polishing pad
polishing
preheating
supply channel
conditioner
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/142,714
Other languages
English (en)
Inventor
Tao Yang
Chao Zhao
Junfeng Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Microelectronics of CAS
Original Assignee
Institute of Microelectronics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Microelectronics of CAS filed Critical Institute of Microelectronics of CAS
Assigned to Institute of Microelectronics, Chinese Academy of Sciences reassignment Institute of Microelectronics, Chinese Academy of Sciences ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LI, JUNFENG, YANG, TAO, ZHAO, CHAO
Publication of US20120244784A1 publication Critical patent/US20120244784A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/015Temperature control
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00Climate change mitigation technologies for sector-wide applications
    • Y02P80/30Reducing waste in manufacturing processes; Calculations of released waste quantities

Definitions

  • the present invention relates to the field of semiconductor tools, and particularly to a chemical-mechanical polishing tool and a method for preheating the same.
  • CMP Chemical-Mechanical Polishing
  • preheating of a CMP tool consumes dummy wafers and polishing slurry, and reduces the service life of the polishing pad and the polishing pad conditioner, which inevitably will all be reflected on the cost of product wafers; this is one of the main reasons that CMP is costly.
  • a problem to be solved by the present invention is that the conventional method for preheating a chemical-mechanical polishing tool has very high consumption of polishing consumables and thereby increases production cost.
  • the present invention provides a chemical-mechanical polishing tool, including: a polishing pad, a deionized (DI) water supply channel, a polishing slurry supply channel and a polishing pad conditioner, wherein the chemical-mechanical polishing tool further includes:
  • a heating apparatus adapted to heat DI water fed to the DI water supply channel
  • a temperature sensor arranged close to the polishing pad to measure a temperature of the polishing pad
  • a preheating control system connected to the temperature sensor, and adapted to control the DI water supply channel to spray the heated DI water to the polishing pad, and when the temperature measured by the temperature sensor is equal to or higher than a predetermined temperature, to close the DI water supply channel, control the polishing slurry supply channel to spray polishing slurry to the polishing pad, and startup the polishing pad conditioner to dress the polishing pad.
  • the heating apparatus is adapted to heat the DI water to a temperature ranging from room temperature to 60° C.
  • a nozzle is arranged at an end of the DI water supply channel, and a baffle is arranged at an outlet of the nozzle.
  • the predetermined temperature ranges from room temperature to 60° C.
  • the preheating control system is adapted to control the polishing pad conditioner to dress the polishing pad for 20 s to 60 s.
  • the length of the polishing pad conditioner in a radial direction of the polishing pad is equal to or larger than a radius of the polishing pad.
  • the length of the polishing pad conditioner in a radial direction of the polishing pad is smaller than a radius of the polishing pad.
  • the preheating control system is adapted to control the polishing pad conditioner to move in a radial direction of the polishing pad, to realize dressing of the polishing pad.
  • the preheating control system is adapted to control the polishing pad conditioner to move in a radial direction of the polishing pad at a constant speed or a variable speed.
  • an electrically-controlled valve is arranged in the DI water supply channel and the polishing slurry supply channel, and the electrically-controlled valve is connected with the preheating control system and controlled by it.
  • the present invention also provides a method for preheating a chemical-mechanical polishing tool, the chemical-mechanical polishing tool including a polishing pad and a polishing pad conditioner, wherein the method includes:
  • the heated DI water has a temperature ranging from room temperature to 60° C.
  • the predetermined temperature ranges from room temperature to 60° C.
  • the time of the polishing pad conditioner dressing the polishing pad ranges from 20 s to 60 s.
  • the length of the polishing pad conditioner in a radial direction of the polishing pad is equal to or larger than a radius of the polishing pad
  • the polishing pad conditioner dressing the polishing pad includes: pressing the polishing pad conditioner on the polishing pad, and driving the polishing pad to rotate.
  • the length of the polishing pad conditioner in a radial direction of the polishing pad is smaller than a radius of the polishing pad
  • the polishing pad conditioner dressing the polishing pad includes: pressing the polishing pad conditioner on the polishing pad, driving the polishing pad to rotate, and driving the polishing pad conditioner to move in a radial direction of the polishing pad.
  • the polishing pad conditioner moves in a radial direction of the polishing pad at a constant speed or a variable speed.
  • the chemical-mechanical polishing tool of the technical solution includes: a polishing pad, a DI water supply channel, a polishing slurry supply channel and a polishing pad conditioner; and the chemical-mechanical polishing tool further includes: a heating apparatus, adapted to heat DI water fed to the DI water supply channel; a temperature sensor, arranged close to the polishing pad to measure a temperature of the polishing pad; and a preheating control system, connected to the temperature sensor, and adapted to control the DI water supply channel to spray the heated DI water to the polishing pad, and when the temperature measured by the temperature sensor is equal to or higher than a predetermined temperature, to close the DI water supply channel, control the polishing slurry supply channel to spray polishing slurry to the polishing pad, and startup the polishing pad conditioner to dress the polishing pad.
  • a heating apparatus adapted to heat DI water fed to the DI water supply channel
  • a temperature sensor arranged close to the polishing pad to measure a temperature of the polishing pad
  • a preheating control system connected to the
  • the chemical-mechanical polishing tool above performs preheating by using the heated DI water and the polishing pad conditioner dressing the polishing pad. Dummy wafers are no longer needed, and consumption of polishing consumables including polishing slurry and the polishing pad is reduced, thereby reducing production cost.
  • the chemical-mechanical polishing tool of the technical solution has a nozzle arranged at an end of the DI water supply channel and a baffle arranged at an outlet of the nozzle, so that the spray range for the DI water can be increased, thereby improving preheating performance.
  • the method for preheating a chemical-mechanical polishing tool of the technical solution includes: firstly, spraying heated DI water to the polishing pad; and when a temperature of the polishing pad is equal to or higher than a predetermined temperature, stopping spraying the DI water, spraying polishing slurry to the polishing pad and controlling the polishing pad conditioner to dress the polishing pad.
  • the method above firstly heats the polishing pad using the heated DI water, then dresses the polishing pad by the polishing pad conditioner so that the polishing pad quickly reaches its operating condition. Dummy wafers are no longer needed, and consumption of polishing consumables including polishing slurry and the polishing pad is reduced, thereby reducing production cost.
  • FIG. 1 is a structural diagram of a chemical-mechanical polishing tool according to an embodiment of the present invention
  • FIG. 2 is a locally enlarged diagram illustrating a nozzle of the chemical-mechanical polishing tool shown in FIG. 1 ;
  • FIG. 3 is a flow chart of a method for preheating a chemical-mechanical polishing tool according to the present invention.
  • preheating of a chemical-mechanical polishing tool is performed by polishing plural dummy wafers, which has very high consumption of e.g. dummy wafers and polishing slurry, and may reduce the service life of the polishing pad and the polishing pad conditioner, and increase production cost.
  • the chemical-mechanical polishing tool of the technical solution includes: a polishing pad, a deionized (DI) water supply channel, a polishing slurry supply channel and a polishing pad conditioner; and the chemical-mechanical polishing tool further includes: a heating apparatus, adapted to heat DI water fed to the DI water supply channel; a temperature sensor, arranged close to the polishing pad to measure a temperature of the polishing pad; and a preheating control system, connected to the temperature sensor, and adapted to control the DI water supply channel to spray the heated DI water to the polishing pad, and when the temperature measured by the temperature sensor is equal to or higher than a predetermined temperature, to close the DI water supply channel, control the polishing slurry supply channel to spray polishing slurry to the polishing pad, and startup the polishing pad conditioner to dress the polishing pad.
  • DI deionized
  • the chemical-mechanical polishing tool above performs preheating by using the heated DI water and the polishing pad conditioner dressing the polishing pad. Dummy wafers are no longer needed, and consumption of polishing consumables including polishing slurry and the polishing pad is reduced, thereby reducing production cost.
  • the chemical-mechanical polishing tool of the technical solution has a nozzle arranged at an end of the DI water supply channel and a baffle arranged at an outlet of the nozzle, so that the spray range for the DI water can be increased, thereby improving preheating performance.
  • the method for preheating a chemical-mechanical polishing tool of the technical solution includes: firstly, spraying heated DI water to the polishing pad; and when a temperature of the polishing pad is equal to or higher than a predetermined temperature, stopping spraying the DI water, spraying polishing slurry to the polishing pad and controlling the polishing pad conditioner to dress the polishing pad.
  • the method above firstly heats the polishing pad using the heated DI water, then dresses the polishing pad by the polishing pad conditioner so that the polishing pad quickly reaches its operating condition. Dummy wafers are no longer needed, and consumption of polishing consumables including polishing slurry and the polishing pad is reduced, thereby reducing production cost.
  • FIG. 1 shows a structural diagram of a chemical-mechanical polishing tool according to an embodiment of the present invention, which includes: a polishing pad 8 , a polishing head 7 , a polishing pad conditioner 2 , a DI water supply channel, a polishing slurry supply channel, a heating apparatus 5 , a temperature sensor 6 and a preheating control system 10 .
  • the polishing pad 8 may be arranged on a polishing plate (not shown), and rotate as driven by the rotation of the polishing plate.
  • the DI water supply channel and the polishing slurry supply channel are arranged on a beam 3 for DI water and polishing slurry supply.
  • the DI water supply channel and the polishing slurry supply channel are not shown in FIG. 1 .
  • An electrically-controlled valve 4 is arranged in the DI water supply channel and the polishing slurry supply channel, and a nozzle 1 is arranged at an end of the DI water supply channel. By switching between states, the electrically-controlled valve 4 can control the DI water supply channel or the polishing slurry supply channel on the beam 3 to spray DI water or polishing slurry, or, completely close the DI water supply channel and the polishing slurry supply channel so that the DI water or the polishing slurry is not sprayed.
  • FIG. 2 a locally enlarged diagram illustrating a nozzle of the chemical-mechanical polishing tool shown in FIG. 1 .
  • a baffle 13 is arranged at an outlet of the nozzle 1 , and the size of the baffle 13 is smaller than the size of the opening of the nozzle 1 .
  • the baffle 13 can increase the spraying angle for the DI water and extend its spray range, thereby improving the performance of the preheating of the polishing pad.
  • the polishing head 7 is arranged above the polishing pad 8 .
  • the wafer is mounted on the surface of the polishing pad 8 , with its surface to be planarized faces the polishing pad 8 .
  • the polishing head 7 presses on a surface of the wafer; meanwhile, the polishing plate drives the polishing pad 8 to rotate, thereby realizing polishing of the wafer.
  • the polishing pad conditioner 2 is arranged above the polishing pad 8 via a beam 11 . Driven by the beam 11 , the polishing pad conditioner 2 presses on the polishing pad 8 ; meanwhile, the polishing plate drives the polishing pad 8 to rotate, thereby realizing dressing of the polishing pad 8 .
  • the heating apparatus 5 heats the DI water fed to the DI water supply channel, to a temperature ranging from room temperature to 60° C.
  • room temperature denotes a temperature range of 18° C. to 25° C.
  • the temperature sensor 6 is arranged close to the polishing pad 8 , to measure the temperature of the polishing pad 8 .
  • the temperature sensor 6 may be an infrared temperature sensor, arranged in a location on the mechanical drive mechanism 12 connected with the polishing head 7 where is close to the polishing pad 8 .
  • the preheating control system 10 is connected to the electrically-controlled valve 4 and the temperature sensor 6 via a signal control line 9 .
  • the preheating control system 10 may be a computer-based control system.
  • the preheating control system 10 opens a valve member of the electrically-controlled valve 4 corresponding to the DI water supply channel so that the DI water supply channel sprays the DI water heated by the heating apparatus 5 to the polishing pad 8 ; while the heated DI water is being sprayed, the preheating control system 10 monitors a temperature signal transmitted from the temperature sensor 6 , and when the temperature of the polishing pad 8 reaches a predetermined temperature, closes the DI water supply channel, specifically, closes the valve member of the electrically-controlled valve 4 corresponding to the DI water supply channel and opens a valve member corresponding to the polishing slurry supply channel so that the polishing slurry supply channel sprays the polishing slurry to the polishing pad 8 , and controls the polishing pad conditioner 2 to dress the polishing pad 8
  • the predetermined temperature ranges from room temperature to 60° C., and the time of the polishing pad conditioner 2 dressing the polishing pad 8 is 20 s to 60 s.
  • product wafers can be mounted on the polishing pad 8 , and batch planarization process starts.
  • the length of the polishing pad conditioner 2 in a radial direction of the polishing pad 8 is equal to or larger than the radius of the polishing pad 8 , that is, the polishing pad conditioner 2 fully covers the radius of the polishing pad 8 .
  • the dressing process is realized by: driving the polishing pad conditioner 2 by the beam 11 to press on the polishing pad 8 , and driving the polishing pad 8 to rotate.
  • the length of the polishing pad conditioner 2 in a radial direction of the polishing pad 8 may be smaller than the radius of the polishing pad 8 , that is, the polishing pad conditioner 2 does not fully cover the radius of the polishing pad 8 .
  • the dressing process may be realized by: driving the polishing pad conditioner 2 by the beam 11 to press on the polishing pad 8 , then driving the polishing pad 8 to rotate and driving the polishing pad conditioner 2 to move in a radial direction of the polishing pad 8 , at a constant speed or at a variable speed.
  • the polishing pad is heated using the heated DI water, then the polishing pad is dressed by the polishing pad conditioner so that the polishing pad quickly reaches its operating condition.
  • the whole preheating process does not consume dummy wafers and has low consumption of polishing slurry and the polishing pad, thereby reducing production cost.
  • An embodiment of the present invention also provides a method for preheating a chemical-mechanical polishing tool, the chemical-mechanical polishing tool including a polishing pad and a polishing pad conditioner. As shown in FIG. 3 , the method includes:
  • step S 11 spraying heated DI water to the polishing pad
  • step S 12 when a temperature of the polishing pad is equal to or higher than a predetermined temperature, stopping spraying the DI water, spraying polishing slurry to the polishing pad and controlling the polishing pad conditioner to dress the polishing pad.
  • step S 11 is performed: spraying heated DI water to the polishing pad.
  • the temperature of the DI water ranges from room temperature to 60° C.
  • the fed DI water may be heated by a heating apparatus.
  • the heating apparatus can be a built-in heating apparatus of a chemical-mechanical polishing tool, e.g. a chemical-mechanical polishing tool according to the embodiment described above.
  • the heating apparatus may also be an external heating apparatus, which heats DI water and then provides the heated DI water to a chemical-mechanical polishing tool.
  • step S 12 is performed: when a temperature of the polishing pad is equal to or higher than a predetermined temperature, stopping spraying the DI water, spraying polishing slurry to the polishing pad and controlling the polishing pad conditioner to dress the polishing pad.
  • the predetermined temperature in this embodiment may range from room temperature to 60° C., and the dressing time is 20 s to 60 s. After dressing, the surface of the polishing pad quickly reaches its operating condition and the polishing slurry is evenly distributed.
  • the length of the polishing pad conditioner in a radial direction of the polishing pad is equal to or larger than the radius of the polishing pad, that is, the polishing pad conditioner fully covers the radius of the polishing pad.
  • the dressing process is realized by: pressing the polishing pad conditioner on the polishing pad, and driving the polishing pad to rotate.
  • the length of the polishing pad conditioner in a radial direction of the polishing pad may be smaller than the radius of the polishing pad, that is, the polishing pad conditioner does not fully cover the radius of the polishing pad.
  • the dressing process may be realized by: pressing the polishing pad conditioner on the polishing pad, then driving the polishing pad to rotate and driving the polishing pad conditioner to move in a radial direction of the polishing pad, at a constant speed or at a variable speed.
  • Applications of the chemical-mechanical polishing tool and its preheating method of the embodiment include, but are not limited to, various CMP processes in the integrated circuit industry, e.g., the CMP process in STI, the CMP process in oxide isolation (ILD), the CMP process for tungsten (W), the CMP process for copper (Cu), the CMP process for polysilicon (poly), the CMP process for metal gates, the CMP process for poly opening polish (POP).
  • various CMP processes in the integrated circuit industry e.g., the CMP process in STI, the CMP process in oxide isolation (ILD), the CMP process for tungsten (W), the CMP process for copper (Cu), the CMP process for polysilicon (poly), the CMP process for metal gates, the CMP process for poly opening polish (POP).
  • CMP processes in the integrated circuit industry e.g., the CMP process in STI, the CMP process in oxide isolation (ILD), the CMP process for tungsten (W), the CMP process for copper (
  • the chemical-mechanical polishing tool of the embodiment can be applied in CMP process for wafers of a variety of sizes, e.g. 8 inches or 12 inches.
  • the method for preheating a chemical-mechanical polishing tool of the embodiment can be applied with CMP tools made by a variety of manufactures or of a variety of types, and hence has good industrial practicability.
  • the chemical-mechanical polishing tool of the technical solution includes: a polishing pad, a DI water supply channel, a polishing slurry supply channel and a polishing pad conditioner; and the chemical-mechanical polishing tool further includes: a heating apparatus, adapted to heat DI water fed to the DI water supply channel; a temperature sensor, arranged close to the polishing pad to measure a temperature of the polishing pad; and a preheating control system, connected to the temperature sensor, and adapted to control the DI water supply channel to spray the heated DI water to the polishing pad, and when the temperature measured by the temperature sensor is equal to or higher than a predetermined temperature, to close the DI water supply channel, control the polishing slurry supply channel to spray polishing slurry to the polishing pad, and startup the polishing pad conditioner to dress the polishing pad.
  • a heating apparatus adapted to heat DI water fed to the DI water supply channel
  • a temperature sensor arranged close to the polishing pad to measure a temperature of the polishing pad
  • a preheating control system connected to the
  • the chemical-mechanical polishing tool above performs preheating by using the heated DI water and the polishing pad conditioner dressing the polishing pad. Dummy wafers are no longer needed, and consumption of polishing consumables including polishing slurry and the polishing pad is reduced, thereby reducing production cost.
  • the chemical-mechanical polishing tool of the technical solution has a nozzle arranged at an end of the DI water supply channel and a baffle arranged at an outlet of the nozzle, so that the spray range for the DI water can be increased, thereby improving preheating performance.
  • the method for preheating a chemical-mechanical polishing tool of the technical solution includes: firstly, spraying heated DI water to the polishing pad; and when a temperature of the polishing pad is equal to or higher than a predetermined temperature, stopping spraying the DI water, spraying polishing slurry to the polishing pad and controlling the polishing pad conditioner to dress the polishing pad.
  • the method above firstly heats the polishing pad using the heated DI water, then dresses the polishing pad by the polishing pad conditioner so that the polishing pad quickly reaches its operating condition. Dummy wafers are no longer needed, and consumption of polishing consumables including polishing slurry and the polishing pad is reduced, thereby reducing production cost.
US13/142,714 2010-12-21 2011-04-11 Chemical-mechanical polishing tool and method for preheating the same Abandoned US20120244784A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201010599278.7A CN102528651B (zh) 2010-12-21 2010-12-21 化学机械抛光设备及其预热方法
CN201010599278.7 2010-12-21
PCT/CN2011/072587 WO2012083621A1 (zh) 2010-12-21 2011-04-11 化学机械抛光设备及其预热方法

Publications (1)

Publication Number Publication Date
US20120244784A1 true US20120244784A1 (en) 2012-09-27

Family

ID=46313085

Family Applications (1)

Application Number Title Priority Date Filing Date
US13/142,714 Abandoned US20120244784A1 (en) 2010-12-21 2011-04-11 Chemical-mechanical polishing tool and method for preheating the same

Country Status (3)

Country Link
US (1) US20120244784A1 (zh)
CN (1) CN102528651B (zh)
WO (1) WO2012083621A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017019067A (ja) * 2015-07-14 2017-01-26 株式会社ディスコ 研削装置のアイドリング方法
CN113732936A (zh) * 2021-05-08 2021-12-03 清华大学 一种抛光温度控制装置、化学机械抛光系统和方法
WO2021257254A1 (en) * 2020-06-17 2021-12-23 Globalwafers Co., Ltd. Semiconductor substrate polishing with polishing pad temperature control
US20220305611A1 (en) * 2021-03-26 2022-09-29 Kctech Co., Ltd. Substrate polishing system and substrate polishing method

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103639886A (zh) * 2013-11-29 2014-03-19 上海华力微电子有限公司 用于w-cmp的化学机械研磨装置及研磨方法
TWI565557B (zh) * 2014-09-24 2017-01-11 力晶科技股份有限公司 化學機械研磨製程
US11103970B2 (en) * 2017-08-15 2021-08-31 Taiwan Semiconductor Manufacturing Co, , Ltd. Chemical-mechanical planarization system
CN110948376B (zh) * 2019-10-24 2020-10-20 清华大学 一种用于化学机械抛光承载头的驱动装置
CN110948379B (zh) * 2019-10-24 2020-10-20 清华大学 一种化学机械抛光装置
CN115431153A (zh) * 2022-08-22 2022-12-06 中国科学院上海光学精密机械研究所 一种用于光学抛光加工的修盘、注液、清洁三位一体式装置及方法

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5893753A (en) * 1997-06-05 1999-04-13 Texas Instruments Incorporated Vibrating polishing pad conditioning system and method
US6000997A (en) * 1998-07-10 1999-12-14 Aplex, Inc. Temperature regulation in a CMP process
US6224461B1 (en) * 1999-03-29 2001-05-01 Lam Research Corporation Method and apparatus for stabilizing the process temperature during chemical mechanical polishing
US6227939B1 (en) * 2000-01-25 2001-05-08 Agilent Technologies, Inc. Temperature controlled chemical mechanical polishing method and apparatus
US6241588B1 (en) * 1997-08-29 2001-06-05 Applied Materials, Inc. Cavitational polishing pad conditioner
US6257955B1 (en) * 1997-08-29 2001-07-10 Infineon Technologies Ag Apparatus and method for heating a liquid or viscous polishing agent, and device for polishing wafers
US6315635B1 (en) * 1999-03-31 2001-11-13 Taiwan Semiconductor Manufacturing Company, Ltd Method and apparatus for slurry temperature control in a polishing process
US20020042200A1 (en) * 2000-10-02 2002-04-11 Clyde Fawcett Method for conditioning polishing pads
US20030186623A1 (en) * 2002-03-29 2003-10-02 Lam Research Corp. Method and apparatus for heating polishing pad
US6832948B1 (en) * 1999-12-03 2004-12-21 Applied Materials Inc. Thermal preconditioning fixed abrasive articles
US6905397B2 (en) * 2000-12-22 2005-06-14 Intel Corporation Apparatus for enhanced rate chemical mechanical polishing with adjustable selectivity
US6976907B2 (en) * 2003-01-10 2005-12-20 Intel Corporation Polishing pad conditioning
US7040967B2 (en) * 2004-01-26 2006-05-09 Tbw Industries Inc. Multi-step, in-situ pad conditioning system and method for chemical mechanical planarization
US7452264B2 (en) * 2006-06-27 2008-11-18 Applied Materials, Inc. Pad cleaning method
US7883393B2 (en) * 2005-11-08 2011-02-08 Freescale Semiconductor, Inc. System and method for removing particles from a polishing pad
US20110159782A1 (en) * 2009-12-28 2011-06-30 Tadakazu Sone Substrate polishing apparatus, substrate polishing method, and apparatus for regulating temperature of polishing surface of polishing pad used in polishing apparatus

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0165418B1 (ko) * 1995-07-20 1999-02-01 김광호 반도체장치의 건조방법
US6225224B1 (en) * 1999-05-19 2001-05-01 Infineon Technologies Norht America Corp. System for dispensing polishing liquid during chemical mechanical polishing of a semiconductor wafer
EP1175964A3 (en) * 2000-07-27 2003-07-23 Agere Systems Guardian Corporation Polishing surface temperature conditioning system for a chemical mechanical planarization process
JP3809337B2 (ja) * 2001-01-31 2006-08-16 株式会社Sumco スラリー供給方法およびその装置
CN1381873A (zh) * 2001-04-13 2002-11-27 华邦电子股份有限公司 具有温度控制的化学机械研磨装置
JP2003257914A (ja) * 2002-02-27 2003-09-12 Fujitsu Ltd 化学機械研磨方法と装置、及び半導体装置の製造方法
KR100498495B1 (ko) * 2003-05-07 2005-07-01 삼성전자주식회사 반도체 소자의 세정 시스템 및 이를 이용한 세정방법
US20040266192A1 (en) * 2003-06-30 2004-12-30 Lam Research Corporation Application of heated slurry for CMP
US7105446B2 (en) * 2003-09-04 2006-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for pre-conditioning CMP polishing pad
CN101347922A (zh) * 2007-07-17 2009-01-21 中芯国际集成电路制造(上海)有限公司 研磨垫的清洗方法
CN101357452A (zh) * 2007-08-03 2009-02-04 中芯国际集成电路制造(上海)有限公司 研磨机台反应系统的预热方法
US8172641B2 (en) * 2008-07-17 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. CMP by controlling polish temperature

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5893753A (en) * 1997-06-05 1999-04-13 Texas Instruments Incorporated Vibrating polishing pad conditioning system and method
US6241588B1 (en) * 1997-08-29 2001-06-05 Applied Materials, Inc. Cavitational polishing pad conditioner
US6257955B1 (en) * 1997-08-29 2001-07-10 Infineon Technologies Ag Apparatus and method for heating a liquid or viscous polishing agent, and device for polishing wafers
US6000997A (en) * 1998-07-10 1999-12-14 Aplex, Inc. Temperature regulation in a CMP process
US6224461B1 (en) * 1999-03-29 2001-05-01 Lam Research Corporation Method and apparatus for stabilizing the process temperature during chemical mechanical polishing
US6315635B1 (en) * 1999-03-31 2001-11-13 Taiwan Semiconductor Manufacturing Company, Ltd Method and apparatus for slurry temperature control in a polishing process
US6832948B1 (en) * 1999-12-03 2004-12-21 Applied Materials Inc. Thermal preconditioning fixed abrasive articles
US6227939B1 (en) * 2000-01-25 2001-05-08 Agilent Technologies, Inc. Temperature controlled chemical mechanical polishing method and apparatus
US20020042200A1 (en) * 2000-10-02 2002-04-11 Clyde Fawcett Method for conditioning polishing pads
US6905397B2 (en) * 2000-12-22 2005-06-14 Intel Corporation Apparatus for enhanced rate chemical mechanical polishing with adjustable selectivity
US20030186623A1 (en) * 2002-03-29 2003-10-02 Lam Research Corp. Method and apparatus for heating polishing pad
US6976907B2 (en) * 2003-01-10 2005-12-20 Intel Corporation Polishing pad conditioning
US7040967B2 (en) * 2004-01-26 2006-05-09 Tbw Industries Inc. Multi-step, in-situ pad conditioning system and method for chemical mechanical planarization
US7883393B2 (en) * 2005-11-08 2011-02-08 Freescale Semiconductor, Inc. System and method for removing particles from a polishing pad
US7452264B2 (en) * 2006-06-27 2008-11-18 Applied Materials, Inc. Pad cleaning method
US20110159782A1 (en) * 2009-12-28 2011-06-30 Tadakazu Sone Substrate polishing apparatus, substrate polishing method, and apparatus for regulating temperature of polishing surface of polishing pad used in polishing apparatus
JP2011136406A (ja) * 2009-12-28 2011-07-14 Ebara Corp 基板研磨装置、基板研磨方法、及び基板研磨装置の研磨パッド面温調装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017019067A (ja) * 2015-07-14 2017-01-26 株式会社ディスコ 研削装置のアイドリング方法
WO2021257254A1 (en) * 2020-06-17 2021-12-23 Globalwafers Co., Ltd. Semiconductor substrate polishing with polishing pad temperature control
US20220305611A1 (en) * 2021-03-26 2022-09-29 Kctech Co., Ltd. Substrate polishing system and substrate polishing method
CN113732936A (zh) * 2021-05-08 2021-12-03 清华大学 一种抛光温度控制装置、化学机械抛光系统和方法

Also Published As

Publication number Publication date
CN102528651B (zh) 2014-10-22
WO2012083621A1 (zh) 2012-06-28
CN102528651A (zh) 2012-07-04

Similar Documents

Publication Publication Date Title
US20120244784A1 (en) Chemical-mechanical polishing tool and method for preheating the same
US11597052B2 (en) Temperature control of chemical mechanical polishing
US20200262024A1 (en) Apparatus and Method for CMP Temperature Control
US5957750A (en) Method and apparatus for controlling a temperature of a polishing pad used in planarizing substrates
EP2478999A2 (en) Polishing method and polishing apparatus
US8182709B2 (en) CMP system and method using individually controlled temperature zones
US8172641B2 (en) CMP by controlling polish temperature
US20130045596A1 (en) Semiconductor device manufacturing method and polishing apparatus
KR102591901B1 (ko) 연마 패드의 연마면의 온도를 조정하기 위한 열교환기, 해당 열교환기를 구비한 연마 장치, 해당 열교환기를 사용한 기판의 연마 방법 및 연마 패드의 연마면의 온도를 조정하기 위한 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체
CN104858785A (zh) 研磨垫的修整方法及装置
US20010055940A1 (en) Control of CMP removal rate uniformity by selective control of slurry temperature
US20240149388A1 (en) Temperature Control in Chemical Mechanical Polish
EP1175964A2 (en) Polishing surface temperature conditioning system for a chemical mechanical planarization process
CN100369713C (zh) 一种化学机械法金刚石膜抛光装置及其抛光方法
US20220305611A1 (en) Substrate polishing system and substrate polishing method
JP2003179013A (ja) 化学的機械的研磨装置の研磨プラテン及びこれを用いた平坦化方法
CN113223932B (zh) 晶圆干燥方法
KR101950676B1 (ko) 기판 연마 장치
WO2005005102A1 (en) Application of heated slurry for cmp
CN112518570A (zh) 化学机械研磨系统
TW202013488A (zh) 在晶圓上執行化學機械研磨之方法以及系統
KR100744099B1 (ko) 씨엠피장비의 슬러리 공급 노즐
CN112338794A (zh) 用于化学机械研磨的装置与方法
KR20210131616A (ko) 화학적 기계적 연마 장치
KR20090044491A (ko) 반도체 소자의 제조방법

Legal Events

Date Code Title Description
AS Assignment

Owner name: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YANG, TAO;ZHAO, CHAO;LI, JUNFENG;REEL/FRAME:026529/0448

Effective date: 20110620

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION