WO2012066080A1 - Appareil et procédé de pulvérisation cathodique - Google Patents

Appareil et procédé de pulvérisation cathodique Download PDF

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Publication number
WO2012066080A1
WO2012066080A1 PCT/EP2011/070359 EP2011070359W WO2012066080A1 WO 2012066080 A1 WO2012066080 A1 WO 2012066080A1 EP 2011070359 W EP2011070359 W EP 2011070359W WO 2012066080 A1 WO2012066080 A1 WO 2012066080A1
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WIPO (PCT)
Prior art keywords
substrate
target
targets
arrangement
width
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PCT/EP2011/070359
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English (en)
Inventor
Wilmert De Bosscher
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Bekaert Advanced Coatings
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Publication of WO2012066080A1 publication Critical patent/WO2012066080A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving

Definitions

  • the present invention relates to a sputtering device and method capable of producing a uniform coating on a substrate at high speed.
  • the target material is a tube, which is rotated around its cylindrical axis.
  • the tube magnets On the inside of the tube magnets are arranged that are typically stationary with respect to a substrate to be coated.
  • Reactive magnetron sputtering is also known e.g. for the deposition of insulating (e.g. oxide or nitride of a metal) and semiconducting coatings.
  • insulating e.g. oxide or nitride of a metal
  • the inert working gas is usually argon and the added reactive gas is often oxygen and/or nitrogen.
  • the coating of dielectric materials can be accomplished by RF sputtering of the dielectric material itself used as the target but the deposition rates are very low.
  • DC or AC reactive magnetron sputtering of insulating films can have higher deposition rates and lower costs, but there is a need to improve the speed of depositing high quality insulating metal oxides and nitrides, e.g.
  • FIG. 1 is a schematic diagram of a conventional vacuum sputtering system 1.
  • the magnetron system is for eroding and depositing target material onto a substrate 5.
  • the sputtering may be onto thin film transistors (FPD) for thin film electronics, onto solar absorbers (PV), onto flexible metallic or polymeric substrates, or onto glass substrates.
  • the sputtering may be for deposition of oxide layers by a low pressure plasma process at low temperatures in layers for which providing electronic functionality raises the problem of plasma damage of the growing film due to unwanted interaction of fast species with the growing film. This is a problem for semiconductor applications such as processing layers in the nanoscale range for Thin Film Transistor applications or in current spreading layers for LED in optoelectronics and for oxide based p-n junctions.
  • the sputtering chamber 2 has a cathode lid 1 and a plurality of horizontally mounted rotatable cylindrical targets 3a, 3b , e.g. typically 2 such cylindrical targets 3a, 3b.
  • the tubular target 3 a, 3b may be machined from a relatively thick wall tube, or it may consist of target layer fixed onto a carrier tube. Both tubular target layer and the backing tube may rotate when sputtering takes place. Hence means for rotating the targets are provided such as one or more motors. Inside each of the hollow tubular targets 3a, 3b are positioned magnet assemblies 4a, 4b that remain stationary as the cylindrical targets are rotated.
  • Magnet assemblies 4a, 4b create plasma racetracks immediately above the target surface when in operation and the racetracks result in erosion zones on the surfaces of the tubular targets.
  • the magnet assemblies include magnets, e.g. lines of magnets of one polarity parallel to the longitudinal axis of the tubular target.
  • Each magnetic assembly is configured to provide a magnetic field racetrack over the outer surface of each tubular target.
  • the magnetic field racetrack confines a plasma gas to erode the target material of each target from a pair of substantially parallel erosion zones along the length of the each tubular target, each pair of erosion zones defining a source plane for each target and being separated by a distance there between, and each magnetic assembly configured to fix the distance between the parallel erosion zones in each target to create a combined area of target material flux for each tubular target.
  • the substrates to be coated are of variable widths. This means that, if a substrate of a width less than the target is passed before a target of a given length in a cathodic sputtering chamber, material is lost due to sputtering beyond the edges of the substrate resulting in
  • One solution to overcome these problems is to use variable length targets which are changed depending upon the width of the substrate to be processed. This takes up considerable space, entails installation and removal time as well as storage of different targets.
  • a single target is used with masking elements which can cover at least one of the ends of the target if the substrate to be processed is of width less than the length of the target.
  • these masks must be replaced or cleaned regularly.
  • a process for forming a coating on a substrate by cathodic sputtering comprising transfer of the substrate between an inlet and an outlet of a cathodic sputtering chamber, passage of at least one surface to be coated of the substrate parallel to a surface of a target, oriented towards this substrate surface and containing one or more elements to be deposited on the substrate, and during this passage, cathodic sputtering of said one or more elements to be deposited on the entirety of the surface to be coated from said target surface.
  • the surface of the target is displaced relative to the surface to be coated of the substrate, such that substantially the entirety of the surface of the target is constantly located opposite the surface to be coated during cathodic sputtering.
  • the longitudinal axis of the target is located in a direction perpendicular to the direction of motion of the strip, when the width of the strip is at its maximum, and at an oblique position relative to this direction of motion, when the width of the strip is less than the maximum width.
  • the rate of deposition depends upon the angle of the target to the direction of motion of the substrate and this has a negative effect upon costs when the width of the strip is high.
  • the present invention provides, in embodiments, an alternative vacuum sputtering device and method capable of producing a uniform coating on a substrate at high speed.
  • the present invention provides in an embodiment a sputtering installation for coating substrates, said substrates being transportable in said installation in a transport direction, said substrate having a substrate width perpendicular to said transport direction, said installation comprising at least one pair of sputtering targets, each rotatable about a longitudinal axis of the target, said targets having magnet bars arranged lengthwise in pole lines for generating elongated race tracks on the surface of said targets during use, said pole lines being substantially parallel to said substrate transport direction.
  • there are at least one pair of targets all targets being arranged side by side with their longitudinal axes parallel. The targets are preferably closer to said substrate than said substrate width, i.e.
  • the distance between the target surfaces and the substrate is lower than the width of the substrate.
  • the race track angle should be larger than 45°, i.e. the angle between adjacent pole lines is larger than 45° as measured from the target axis.
  • the targets may pivot in the sputtering chamber.
  • the present invention provides in one embodiment a vacuum sputtering arrangement for coating a substrate, said substrate being transportable through said arrangement in a transport direction, said substrate having a substrate width perpendicular to said transport direction, said arrangement comprising at least one pair of sputtering targets, each rotatable about a longitudinal axis of the target. All targets are arranged side by side with their longitudinal axes parallel, said longitudinal axes being substantially parallel to said substrate transport direction.
  • the distance from the target surface to said substrate is smaller than said substrate width.
  • the substrate is transportable through said arrangement, and is positionable in said arrangement, such that the distance from the target surface to said substrate is smaller than said substrate width.
  • means are provided for transporting the substrate through said arrangement, and for positioning the substrate in said arrangement, such that the distance from the target surface to said substrate is smaller than the substrate width.
  • the substrate width may be equal to the maximum substrate width that is transportable through said arrangement.
  • the substrate may be transported through said arrangement by a transporter, or transport means, that may be part of the arrangement.
  • the transporter is adapted for transporting the substrate through said arrangement, and for positioning the substrate in said arrangement, such that the distance from the target surface to said substrate is smaller than the substrate width.
  • the transporter may determine the maximum transportable substrate width.
  • targets with their longitudinal axis being parallel, or substantially parallel, to the transport direction increases the area of target flux that impinges on the substrate and hence increases throughput.
  • the targets have magnet bars for generating elongated race tracks on the surface of said targets during use. This allows use of standard magnet bars.
  • the targets can be adapted to pivot around an axis perpendicular to the longitudinal axes of the targets and to the substrate. This allows more flexibility in production conditions. However it increases the complexity of the arrangement.
  • Reference planes each of which passes through the centre of a tubular target and also through the centre of an erosion zone of the same target preferably subtend an angle at the centre of that tubular target greater than 45°, e.g. between 45 and 90°.
  • This allows an improved target flux at the substrate.
  • the angle subtended at the target longitudinal axis is between 50° and 80°.
  • the target flux of each of the targets combines to create an area of substantially uniform flux at the substrate. This combination is controllable by means of adjusting parameters of the sputtering magnetron configuration.
  • the target to substrate distance can be between 50 and 500mm the spacing of the axes of the at least first and second targets can be between 40 and 500mm, the diameter of the cylindrical targets can be between 30 and 500mm. This allows an arrangement that is economical in space.
  • At least one or each individual target does not span the complete width of the substrate . This provides a large amount of the target pointing in the direction of substrate movement which improves throughput.
  • the arrangement is preferably adapted for any of the following either individually or in combination:
  • the present invention also provides in an embodiment a method of vacuum sputtering for coating a substrate said using at least one pair of rotatable sputtering targets, each having a longitudinal axis, all targets being arranged side by side with their longitudinal axes parallel, the method comprising: transporting said substrate through a vacuum chamber in a transport direction, said substrate having a substrate width perpendicular to said transport direction,
  • said longitudinal axes of the rotatable targets being positioned substantially parallel to said substrate transport direction, wherein the distance from the target surface to said substrate is set to be is smaller than said substrate width.
  • At least one or each individual target does not span the complete width of the substrate.
  • the method may include any of the following or combinations thereof:
  • pivoting the target set through small angles whereby the pivoting may include rotation of the target set as a whole or rotating each target of the target set so that the tragets remain parallel to each other, and/or
  • a vacuum sputtering system for eroding and depositing target material on a substrate, comprising:
  • each of the at least first and second cylindrical tubular targets being rotatable about the longitudinal axis of the cylindrical tubular target
  • the second rotatable cylindrical tubular target is positioned relative to the first target such that axes of the at least first and second targets are parallel to each other;
  • each magnetic assembly being configured to provide a magnetic field racetrack over the outer surface of each tubular target
  • the magnetic field racetrack confining a plasma gas to erode the target material of each target from a pair of substantially parallel erosion zones along the length of the each tubular target
  • each magnetic assembly being configured to fix the distance between the parallel erosion zones in each target to create a combined area of target material flux for each tubular target
  • magnet assemblies are oriented relative to each other such that an included angle is formed between a pair of reference planes passing through the axis of each target.
  • reference planes each of which passes through the centre of a tubular target and also through the centre of an erosion zone of the same target subtend an angle at the centre of that tubular target greater than 45°, e.g. between 45 and 90°.
  • FIG. 1 is a schematic view of a conventional sputtering chamber.
  • FIG. 2 is a schematic cross-sectional view of a dual target sputtering chamber in accordance with an embodiment of the present invention.
  • FIGs. 3a to c are schematic views of different embodiments according to the prsent invention.
  • FIG. 4 is a graph showing a relationship between parallel dual target length and number of equivalent perpendicular target pairs.
  • FIGs. 5 to 10 show graphs of target flux for various embodiments of the present invention.
  • FIG. 11 is a schematic cross-sectional view of a multi-target sputtering chamber in accordance with an embodiment of the present invention.
  • FIG. 12 is graph showing optimisations of parameters according to the embodiment of a dual target configuration of the present invention.
  • the present invention relates to coating systems and processes that utilize improved magnetrons as hereafter described.
  • two magnetrons or three magnetrons are mounted together substantially in parallel. More than three magnetrons can be used with the present invention as well be described below. Minor differences in dimensions or design details would not negate their ability to properly function together.
  • Certain parts of a sputtering magnetron system will not be described in detail such as vacuum feedthroughs, rotating mechanisms, target support means, plasma and/or argon gas feeds and control systems, power supply and control therefore, and the cooling system (normally using water) and control therefore.
  • the present invention provides in an embodiment a sputtering installation for coating substrates, said substrates being transportable in said installation in a transport direction, said substrate having a substrate width perpendicular to said transport direction, said installation comprising at least one pair of sputtering targets, each rotatable about a longitudinal axis of the target, said targets having magnet bars arranged lengthwise in pole lines for generating elongated race tracks on the surface of said targets during use, said pole lines being substantially parallel to said substrate transport direction.
  • the distance between the target surfaces and the substrate is lower than the width of the substrate.
  • the race track angle should be larger than 45°.
  • the magnet bars are arranged in a magnetic assembly that is configured to provide a magnetic field racetrack over the outer surface of each tubular target,
  • each pair of erosion zones defines a source plane for each target, each pair of erosion zones being separated by a distance, and each magnetic assembly being configured to fix the distance between the parallel erosion zones in each target to create a combined area of target material flux for each tubular target.
  • the magnet bars are oriented relative to each other such that an included angle is formed between a pair of reference planes passing through the axis of each target. These reference planes, each of which passes through the centre of a tubular target and also through the centre of an erosion zone of the same target subtend an angle at the centre of that tubular target greater than 45°, e.g. between 45 and 90°.
  • the substrate may be transported through the sputtering arrangement by a transporter, or transport means, that may be part of the sputtering arrangement. The transporter may determine the maximum substrate width that can be transported through the arrangement.
  • the present invention starts from the principle that, in order to adapt to different substrate widths, the angle of the longitudinal axis of a target to the direction of movement of the substrate should not change too much so that there is little change in the throughput that can be achieved.
  • a mechanism needs to be provided for reducing the width of the sputtered material such as to align the sputter width with the substrate width.
  • two or more targets are used whose longitudinal axes are parallel and also are substantially parallel to the direction of motion of the substrate.
  • Substantially parallel to the direction of motion of the substrate means making an angle of less than 45° with this direction.
  • Substrate width variation is provided by a variety of mechanisms which can be used individually or in combination:
  • the pivoting may include rotation of the target set as a whole or rotating each target of the target set so that the tragets remain parallel to each other or
  • various parameters of the sputtering arrangement may be adjusted to achieve good deposition of a coating. For example:
  • the angle between the race tracks (defined by the magnet bar) may be set to an angle of greater that 45°.
  • a vacuum sputtering system is for eroding and depositing target material onto a substrate .
  • the sputtering may be onto thin film transistors (FPD) for thin film electronics, onto solar absorbers (PV), onto flexible metallic or polymeric substrates, or onto glass substrates.
  • the sputtering may be for deposition of oxide layers by a low pressure plasma process at low temperatures in layers for which providing electronic functionality raises the problem of plasma damage of the growing film due to unwanted interaction of fast species with the growing film. This is a problem for semiconductor applications such as processing layers in the nanoscale range for Thin Film Transistor applications or in current spreading layers for LED in optoelectronics and for oxide based p-n junctions.
  • the sputtering chamber has a cathode lid 1 (see Fig 1) and a plurality of horizontally mounted rotatable cylindrical targets 3a, 3b.
  • the spacing of the targets, centre-to-centre is S.
  • the tubular targets 3a, 3b have a diameter D and may be machined from a relatively thick wall tube, or may consist of a target layer fixed onto a carrier tube. Both tubular target layer and the backing tube may rotate when sputtering takes place.
  • means for rotating the targets are provided such as one or more motors.
  • magnet assemblies 4a, 4b that remain stationary as the cylindrical targets are rotated.
  • Magnet assemblies 4a, 4b create plasma racetracks 6a, 6b immediately above the target surface when in operation and the racetracks result in erosion zones on the surfaces of the tubular targets.
  • the magnet assemblies 4a, 4b include magnets, e.g. lines of magnets of one polarity parallel to the longitudinal axis of the tubular target.
  • Each magnetic assembly is configured to provide a magnetic field racetrack 6a, 6b over the outer surface of each tubular target.
  • the magnetic field racetrack 6a, 6b confines a plasma gas to erode the target material of each target from a pair of substantially parallel erosion zones along the length of the each tubular target, each pair of erosion zones defining a source plane for each target.
  • the erosion zones on a target are separated by a distance, such as defined by an angle distance X subtended at the centre of each target.
  • Each magnetic assembly 4a, 4b is configured to fix this distance between the parallel erosion zones in each target to create a combined area of target material flux for each tubular target.
  • Preferably a greater fraction of the target flux from each target is utilized to deposit target material onto a substrate than from a single zone on each target.
  • One or more of the magnet assemblies 4a, 4b can in some embodiments be rotated or tilted relative to the plane of the substrate, e.g. by an angle Y with respect to a normal through the substrate 5. Accordingly there are means for tilting the magnetic assemblies.
  • the tilting may be done by hand and locked in position by a locking mechanism and optionally a fine adjustment system, or the tilting may be done by a motor such as a stepping motor or a servomotor with angular position feedback control.
  • the magnet assemblies are oriented relative to each other such that, at the substrate, the target flux of each of the targets combines to create an area of substantially uniform flux.
  • the angular distance ("racetrack angle" X) between the parallel erosion zones, subtended at the centre of the cylindrical target is preferably greater than 45°, for example is 45 to 90° or for example 50 to 80°.
  • the placement of the substrate 5 with respect to the targets e.g.
  • the target surface to substrate distance H and the pointing angles Y of the racetracks toward the substrate 5 and each other are selected to create a uniform target flux over a significant area at the substrate 5.
  • These parameters are optimized to form a relatively wide and efficient constant flux deposition region at the substrate 5. This allows high deposition rates at constant reactive gas partial pressures with substantially uniform film stoichiometry and thickness.
  • the target to substrate distance can be between 50 and 500mm.
  • one magnetic assembly can be oriented with respect to a plane perpendicular to the substrate to subtend an angle of between 5° and 40°.
  • the spacing of the axes of at least first and second targets can be between 40 and 500mm.
  • the diameter of the cylindrical targets can be between 30 and 500mm.
  • the target flux at the substrate is substantially constant with a variability of less than 5%, preferably with a variability of less than 2% more preferably with a variability of less than 1% over a distance of at least 75% of the spacing distance between the axes of the outer magnetrons and more preferably over a distance similar (+/- 20%) to the spacing distance between the axes of the outer magnetrons.
  • the tubular target includes a target support assembly for holding the target material and for enabling the target material to be rotated with respect to the magnet assembly. Means are provided to rotate the tubular target at a determinable speed. Means are provided for introducing a plasma gas into the sputtering chamber and controlling the gas flow to achieve a determinable density of the plasma gas in the vicinity of the substrate. Means can be provided for introducing a reactive gas into the sputtering chamber and controlling the gas flow to achieve a determinable density of the plasma gas in the vicinity of the substrate.
  • the speed of rotation of the targets and the density of the plasma gas at the erosion zones is preferably set to prevent target material from accumulating on the target at a location away from the erosion zones during a rotation of the tubular target.
  • the present invention may also include the use of one or more shields to facilitate the removal of target material that did not arrive onto the substrate. In DC operation a separate electrical anode, constructed from a conducting material, usually a metal, may be foreseen.
  • Each pair of erosion zones on a target defines a source plane and planes normal to the source planes in the direction of the substrate intersect with the substrate in such a way that the intersections of the normals to the source planes lie behind the substrate on the other side from the targets.
  • the substrate is positioned such that a line of intersection that is common to both planes normal to the source planes, is behind the substrate, i.e. on the opposite side of the substrate from the targets.
  • the substrate is positioned at a distance nearer to the targets than this intersecting line.
  • This ripple can be defined by a Peak-to-Peak value defined by dividing the maximum local deposition rate minus the minimum local deposition rate by the average deposition rate within the substrate window of substantially constant flux.
  • the variability is defined by dividing the Peak-to-Peak value by 2. If the substrate is too far from the targets the peaks merge but are wider in extent.
  • a target flux from a single erosion zone that is oriented with respect to the substrate typically has a distribution similar to a skewed Gaussian-like curve having a center of distribution and a width.
  • the width of the Gaussian- like curve can be defined as a distance between two one-half points on the curve.
  • the distance between the parallel erosion zones on each target is set so that the target flux at the substrate from the pair of erosion zones is substantially uniform over a field larger than that from a single erosion zone.
  • the magnet assembly is fixed with respect to a substrate position.
  • the substrate 5 is moved continuously below the cylindrical targets 3a, 3b.
  • 3a and 3b is/are positioned relative to the first target 3a such that axes of the first and second targets 3a, 3b and other targets 3c, 3d are parallel to each other and the outside surfaces of the first and second cylindrical tubular targets 3a, 3b are in close proximity.
  • all of the magnets of the magnet assemblies 4a, 4b point radially away from the geometrical centers of the respective tubular targets 3 a, 3b.
  • the centre-to- centre distance S between the targets 3a, 3b, target surface to substrate spacing H, the angle between racetracks X and the rotation or tilting of the magnet assemblies with respect to each other Y are selected so that the target flux of the targets combines to create an area of substantially uniform flux at the substrate 5 and hence of uniform thickness and
  • each magnet assembly 4 can include a support structure constructed from a water resistant magnetic alloy.
  • Each magnet assembly includes center and outer magnets arranged so that erosion zones are produced on the target which subtend an angle (the race track angle X) at the centre of the cylindrical target.
  • the magnets may have magnet pole pieces.
  • Pole pieces aid in smoothing out the magnetic field produced by magnets if they are constructed from an array of smaller individual magnets.
  • the magnets may be arranged in a housing to prevent exposure to the cooling medium.
  • the directions of magnetization of magnets may be selected as desired, however, all the magnet assemblies that are used in a given system usually have like magnetic orientation.
  • the cross section shape of the magnets may be rectangular or may have irregular shape as to accommodate the desired magnetic field distribution.
  • the magnets may be of the rare earth (NeFeB) type, which have very high energy density. They define the erosion zones that are part of the racetrack.
  • the magnet assemblies 4 are intentionally constructed to increase the distance between the center and outer magnets compared to prior art designs, to thereby produce erosion zones spaced at large distances while maintaining high magnetic field strength.
  • the vacuum sputtering system according to the present invention can be used for high rate reactive deposition of, for example, dielectric thin films at low sputtering gas pressure with both conductive and insulating target materials. This allows the apparatus to produce superior quality dielectric films while maintaining a very constant process over the lifetime of the target tube.
  • Fig. 3a shows a first arrangement of targets 3a-d in accordance with an embodiment of the present invention.
  • the target longitudinal axis is parallel to the movement direction of the substrate 5.
  • Fig. 3b shows a second arrangement of targets 3a-d in accordance with an embodiment of the present invention.
  • the target longitudinal axis is slightly offset from parallel to the movement direction of the substrate 5 but each target extends in a direction across the substrate that is less than the width of the substrate.
  • Fig. 3c shows a third arrangement of targets 3a-d in accordance with an embodiment of the present invention.
  • the target longitudinal axis is substantially parallel to the movement direction of the substrate 5 but each target spans the complete width of the substrate 5.
  • the targets 3a-d may be arranged to pivot from the position shown in Fig. 3a, through the position shown in Fig. 3b to the position shown in Fig. 3c.
  • the angle between the longitudinal axis of the parallel targets to the direction of motion of the substrate is preferably less than 45°. The smaller the angle the lower the effect on throughput of the sputtering apparatus.
  • the movement of the targets 3a-d is a combination of a rotation and a translation.
  • the rotation of the targets may be an individual rotation, wherein each target is rotated around an own rotation axis, or, alternatively, the targets may be rotated as a group around a single rotation axis. In the case of rotation as a group, a set of targets forming a rectangle will remain a rectangle, while in the case of individual rotation a rectangular form is changed to the form of a parallelogram, while the distance between the targets is also changed.
  • the present invention includes N targets being provided in parallel as shown in Fig. 3a and b, wherein the targets are oriented in such a manner with respect to the movement direction of the substrate that an end of at least one target lies above the moving substrate.
  • the racetrack angles is preferably 45° or greater and other parameters of the target assembly are set to provide a wider area of uniform target flux on the substrate.
  • the number of contiguous targets that are energised can be changed, e.g. not N but N-m.
  • the number and length of the parallel targets in accordance with embodiments of the present invention that need to be used to obtain a certain throughput can be related to the number of targets that are used when the targets are placed perpendicular to the direction of movement of the substrate as shown in Fig. 4.
  • Figs. 5 illustrates schematically the relative distribution of sputtered flux from two targets on the substrate in accordance with embodiments of the present invention.
  • FIG. 6 A further embodiment of the present invention is shown in Fig. 6 with 4 targets, the configuration was: Diameter of target D: 150mm, Target-substrate spacing H: was for two targets 149 mm and for two targets 121mm, Race track angle X: 54°, Spacing of target axis S: 190 mm, Tilting of race-track Y of the outer magnetrons: 6°.
  • the results are shown graphically in Fig. 6 and are: Peak-to-Peak variation: 0.2%, Yield within 400 mm window: about 50% of all sputtered material. Power for all targets was 100%.
  • Fig. 8 substrate width 1250mm, racetrack angle for all targets X: 39°, tilting of the outer magnetrons: 0°, target diameter D: 150 mm, target-target spacing S: 190 mm, number of dual magnetron sets: 4, power level per dual magnetron set: inner (first): 99%, second 100%, third 100% and outer (fourth) 128%, target-substrate spacing H: 150 mm.
  • the results are shown schematically in Fig. 8 and are: Peak-to-Peak variation 3.7%. In this case four of the magnetron sets are driven to sputter a wider substrate.
  • Fig. 9 The configuration for Fig. 9 is: substrate width 1600mm, racetrack angle for all targets X: 39°, tilting of the outer magnetrons: 0°, target diameter D: 150 mm, target-target spacing S: 190 mm, number of dual magnetron sets: 5, power level per dual magnetron set: inner (first): 99%, second 100%, third 100%, fourth 100%, and (fifth) outer: 128%, target- substrate spacing H: 150 mm.
  • the results are shown schematically in Fig. 9 and are: Peak- to-Peak variation 3.7%. In this case all five of the magnetron sets are driven.
  • the outer magnetrons may be run at a higher power level than the other magnetrons in order to compensate for edge effects.
  • tilting of the outer magnet bars has been excluded in the above embodiments.
  • Magnet bars with a fixed angle between the race track (racetrack angle X) of 39° were used but in accordance with the present invention larger values can be used, e.g. 45-90 or 50-80°. Larger race track angles allow to reduce target substrate spacing without affecting uniformity.
  • Fig. 10 shows an optimisation of parameters according to an embodiment of the present invention for 5 dual magnetron sets (8 targets) and a larger racetrack angle. The configuration for Fig.
  • Fig. 10 is: substrate width 1600mm, racetrack angle for all targets X: 54°, tilting of the outer magnetrons: 6°, target diameter D: 150 mm, target- target spacing S: 190 mm, number of dual magnetron sets: 5, power level per magnetron: all 100%, target-substrate spacing H: 149 mm for all magnetrons except for the outer set at 121 mm.
  • the results are shown schematically in Fig. 10 and are: Peak-to-Peak variation 0.4%.
  • the embodiment described above uses a racetrack angle of above 45° and the example shows that a higher sputter rate can be obtained with better uniformity.
  • Fig. 12 shows an optimisation of parameters for one dual magnetron set (2 targets) according to embodiments of the present invention. All the points on the graphs relate to a uniform sputter zone perpendicular to target axis depending on the criteria:
  • the configuration of the outer magnetrons (i.e. 1 target at each side) was:
  • the reactive gas partial pressure can be reduced to react fully at the location where the largest flux of target particles is arriving. Further, at this working point; the target is less poisoned and may realize a higher sputter rate for the same power level. Also with reference to the homogeneous layer composition, the compound formation is much more homogeneous over the formed layer thickness. Thus higher performing TCO's may be realized with the same target materials. Hence, the compound formation is not different depending on the local flux of target particles arriving at the substrate. Also it is less necessary for TCO's to make a trade-off between conductivity and layer transmittance.
  • FIG. 11 shows a schematic representation of how a vacuum sputtering apparatus can be implemented in accordance with a further embodiment of the present invention.
  • a moving substrate 5 is arranged to pass through a chamber 2 having one or two hinged lids 11, 12, e.g. hinged at edges 9 and 10. Lids 11, 12 fold together into a cabinet 13 to form a vacuum sputtering chamber.
  • Within each lid 11, 12 a plurality of rotating cylindrical targets 3a-d and/or 3e to h are arranged.
  • Certain parts of the sputtering system will not be described in detail such as vacuum feedthroughs, rotating mechanisms, target support means, plasma and/or argon gas feeds and control systems, power supply and control therefore, and the cooling system (normally using water) and control therefore.

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Abstract

L'invention porte sur une installation et sur un procédé de pulvérisation cathodique pour revêtir des substrats, le substrat étant transportable dans ladite installation dans une direction de transport, le substrat ayant une largeur de substrat perpendiculaire à ladite direction de transport, laquelle installation comprend au moins une paire de cibles de pulvérisation cathodique, pouvant chacune tourner autour d'un axe longitudinal de la cible, les cibles ayant des barres d'aimant disposées dans le sens de la longueur dans des lignes de pôle pour générer des trajectoires de piste allongées sur la surface des cibles pendant l'utilisation. Les lignes de pôle sont sensiblement parallèles à la direction de transport de substrat. Toutes les cibles sont disposées côte à côte avec leurs axes longitudinaux qui sont parallèles. Les cibles sont plus proches du substrat que la largeur du substrat, ou, autrement dit, la distance entre les surfaces de cible et le substrat est inférieure à la largeur du substrat. Selon un mode de réalisation avantageux de l'invention, et, spécialement pour l'uniformité de revêtement, l'angle de trajectoire de piste devrait être supérieur à 45°, ou, autrement dit, l'angle entre des lignes de pôle adjacentes est supérieur à 45°, mesuré à partir de l'axe de cible.
PCT/EP2011/070359 2010-11-17 2011-11-17 Appareil et procédé de pulvérisation cathodique WO2012066080A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP10191611.2 2010-11-17
EP10191611 2010-11-17

Publications (1)

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WO2012066080A1 true WO2012066080A1 (fr) 2012-05-24

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015149857A1 (fr) * 2014-04-03 2015-10-08 Applied Materials, Inc. Dispositif de pulvérisation cathodique permettant de réaliser une pulvérisation cathodique sur un matériau une surface de substrat
WO2015158391A1 (fr) * 2014-04-17 2015-10-22 Applied Materials, Inc. Amélioration de l'uniformité de bord dans des dispositifs de revêtement à réseau de dépôt physique en phase vapeur
DE102014114237A1 (de) * 2014-09-30 2016-03-31 Von Ardenne Gmbh Beschichtungsanlage und Verfahren zur Abscheidung von Schichten mittels Magnetronsputtern
CN106816351A (zh) * 2017-01-20 2017-06-09 信利（惠州）智能显示有限公司 一种离子注入装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06136537A (ja) * 1992-10-29 1994-05-17 Ishikawajima Harima Heavy Ind Co Ltd 連続帯状物用真空蒸着装置
US5814195A (en) * 1995-04-25 1998-09-29 The Boc Group, Inc. Sputtering system using cylindrical rotating magnetron electrically powered using alternating current
US6083359A (en) 1996-12-10 2000-07-04 Recherches Et Developpement Du Groupe Cockerill Sambre, En Abrege: Rdcs Process and device for forming a coating on a substrate by cathode sputtering
US20010009221A1 (en) * 2000-01-19 2001-07-26 Toshiaki Anzaki Film-forming apparatus and film-forming method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06136537A (ja) * 1992-10-29 1994-05-17 Ishikawajima Harima Heavy Ind Co Ltd 連続帯状物用真空蒸着装置
US5814195A (en) * 1995-04-25 1998-09-29 The Boc Group, Inc. Sputtering system using cylindrical rotating magnetron electrically powered using alternating current
US6083359A (en) 1996-12-10 2000-07-04 Recherches Et Developpement Du Groupe Cockerill Sambre, En Abrege: Rdcs Process and device for forming a coating on a substrate by cathode sputtering
US20010009221A1 (en) * 2000-01-19 2001-07-26 Toshiaki Anzaki Film-forming apparatus and film-forming method

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015149857A1 (fr) * 2014-04-03 2015-10-08 Applied Materials, Inc. Dispositif de pulvérisation cathodique permettant de réaliser une pulvérisation cathodique sur un matériau une surface de substrat
CN106460156A (zh) * 2014-04-03 2017-02-22 应用材料公司 用于在基板表面上溅射材料的溅射布置
TWI649778B (zh) * 2014-04-03 2019-02-01 美商應用材料股份有限公司 濺鍍材料於基板表面上之濺鍍配置
CN106460156B (zh) * 2014-04-03 2020-01-10 应用材料公司 用于在基板表面上溅射材料的溅射布置
WO2015158391A1 (fr) * 2014-04-17 2015-10-22 Applied Materials, Inc. Amélioration de l'uniformité de bord dans des dispositifs de revêtement à réseau de dépôt physique en phase vapeur
CN106165058A (zh) * 2014-04-17 2016-11-23 应用材料公司 Pvd阵列涂覆器中的边缘均匀性改善
KR20160145737A (ko) * 2014-04-17 2016-12-20 어플라이드 머티어리얼스, 인코포레이티드 Pvd 어레이 코팅기들에서의 에지 균일성 개선
CN106165058B (zh) * 2014-04-17 2019-01-18 应用材料公司 Pvd阵列涂覆器中的边缘均匀性改善
KR102005540B1 (ko) 2014-04-17 2019-07-30 어플라이드 머티어리얼스, 인코포레이티드 Pvd 어레이 코팅기들에서의 에지 균일성 개선
DE102014114237A1 (de) * 2014-09-30 2016-03-31 Von Ardenne Gmbh Beschichtungsanlage und Verfahren zur Abscheidung von Schichten mittels Magnetronsputtern
CN106816351A (zh) * 2017-01-20 2017-06-09 信利（惠州）智能显示有限公司 一种离子注入装置

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