WO2012062058A1 - 一种提高电子束光刻效率的方法 - Google Patents

一种提高电子束光刻效率的方法 Download PDF

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Publication number
WO2012062058A1
WO2012062058A1 PCT/CN2011/070993 CN2011070993W WO2012062058A1 WO 2012062058 A1 WO2012062058 A1 WO 2012062058A1 CN 2011070993 W CN2011070993 W CN 2011070993W WO 2012062058 A1 WO2012062058 A1 WO 2012062058A1
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electron beam
baking
lithography
pattern
post
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PCT/CN2011/070993
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English (en)
French (fr)
Inventor
徐秋霞
许高博
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中国科学院微电子研究所
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Priority to US13/123,070 priority Critical patent/US8278026B2/en
Publication of WO2012062058A1 publication Critical patent/WO2012062058A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes

Definitions

  • the invention belongs to a nano-scale semiconductor device preparation process, and particularly relates to a method for improving electron beam exposure efficiency in nano-pattern preparation, which speeds up the process for preparing nano-patterns and greatly reduces the cost. Background technique
  • An object of the present invention is to provide a method for improving electron beam exposure efficiency to overcome the drawbacks of the prior art.
  • the present invention divides the pattern requiring photolithography into two parts, and decomposes the large-sized pattern portion by optical exposure, and the fine pattern lithography is still completed by electron beam lithography, and the present invention also solves the two kinds.
  • the process compatibility issues of the photolithographic process make the utility of the present invention possible.
  • the main steps are as follows - Step 1) applying a positive photoresist on the film to be photolithographically, and performing pre-baking;
  • Step 2 Graphic data segmentation, optical exposure of large-sized graphics portions, post-baking; Step 3) positive photoresist visualization;
  • Step 4 plasma fluorination
  • Step 6 Applying an electron beam negative glue to perform pre-baking
  • Step 7) performing electron beam exposure on the fine pattern portion
  • Step 9) Electron beam negative gel formation, complete lithography pattern preparation.
  • the positive photoresist film has a thickness of 200 to 400 nm, and the front hot plate has a temperature of 90 to 95 ° C for 60 to 90 seconds.
  • the method wherein the large-size pattern optical exposure in the step 2) is performed by a step-and-repeat lithography machine (Stepper), the post-heating plate temperature is 100 to 115 ° C, and the time is 60-90 seconds.
  • the method, wherein the plasma fluorination conditions in the step 4) are: a power of 30 to 60 W, a pressure of 300 to 550 mTon-, a reaction gas of CF 4 , a flow rate of 100 to 300 sccm, and a fluorination time of 20 to 60 seconds.
  • the baking is reinforced at a temperature of 130 160 ° C and a time of 40 to 60 minutes.
  • the electron beam negative film thickness is 200-400 nm in the step 6
  • the front hot plate temperature is 100-115 ° C
  • the time is 1-3 minutes.
  • step 8 the temperature of the hot plate is 100 to 115 ° C, and the time is 1 to 3 minutes.
  • FIG. 1 is a glue pattern formed by two photolithography methods according to the present invention, wherein a large-size pattern (A) is completed by optical exposure with a positive photoresist, and a fine pattern (B) is completed by electron beam exposure with a negative electron beam.
  • the line width is about 50-60 nm.
  • the present invention proposes a method of how to overcome the low efficiency of electron beam exposure. That is, the graphic data that needs to be photolithographic is divided into two parts, the large-sized graphic part is decomposed and prepared by optical exposure, and the preparation of the fine graphic part is still completed by electron beam lithography, in order to solve the process compatibility problem of the two photolithography methods. That is, in the development process of the electron beam exposure, the large-size glue pattern formed by the optical lithography is not dissolved and damaged, and the optical exposure portion of the present invention is exposed with a positive photoresist, and after the development, the glue is subjected to fluorine.
  • Step 1) Apply a layer of positive photoresist on the film to be photolithographic, the film thickness is 20 (400 nm; the front supply: hot plate temperature 90-95 ° C, time 60 90 seconds;
  • Step 2 Graphic data segmentation, using a bifurcation repeating lithography machine to optically expose large-sized graphics portions, followed by post-baking: hot plate temperature 100-110. C, 1 ⁇ 1.5 minutes;
  • Step 3 development, 40 ⁇ 60 seconds
  • Step 5 Baking reinforcement: oven temperature 130-160 ° C, time 40-60 minutes;
  • Step 6 Apply electron beam negative glue 200 ⁇ 400nm, then pre-bake: hot plate temperature 100 ⁇ 115°C, time 1 ⁇ 3 minutes;
  • Step 7) performing electron beam exposure on the fine pattern portion
  • Step 8) Post-baking: hot plate temperature 100 ⁇ 115°C, time 1 ⁇ 3 minutes;
  • Step 9) Development, complete lithography pattern preparation.
  • Step 2 Graphic data segmentation, optical exposure of large-sized graphic parts, post-baking: hot plate temperature 100-110 ° C, 1 minute;
  • Step 3 developing the positive photoresist, 50 ⁇ 60 seconds
  • Step 5 Bake reinforcement: 140-160 ° C, 40-50 minutes;
  • Step 6 Apply electron beam negative glue 300 ⁇ 400nm, pre-bake 100 ⁇ 110, 1 ⁇ 3 minutes;
  • Step 7) performing electron beam exposure on the fine pattern portion
  • Step 8) Post-baking: hot plate temperature 100 ⁇ 110 °C, 1 ⁇ 3 minutes;
  • Step 9 Electron beam negative development, CD-26 development adhesive, development time 6 ⁇ 7 minutes, complete lithography pattern preparation.
  • the lithography pattern completed by the present invention can be seen in FIG. 1 , wherein the large-size pattern (A) is completed by positive photoresist optical exposure, and the fine pattern (B) is completed by negative electron beam electron beam exposure, and the line width is about It is 5060 nm.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)

Description

一种提高电子束光刻效率的方法 技术领域
本发明属于纳米尺度的半导体器件制备工艺， 具体涉及纳米图形制备中， 如何提 高电子束曝光效率的方法， 为纳米图形的制备加快了流程， 大幅度降低了成本。 背景技术
在亚 50纳米器件和集成电路的制备中， 首要的问题是如何获得亚 50纳米的光刻 图形， 对于这么精细的图形， 当今的光学光刻技术已很难实现， 釆用电子束光刻是一 种有效的途径。 但是电子束光刻曝光速度太慢， 曝光效率太低， 严重影响科研进度。 发明内容
本发明的目的在于提供一种提高电子束曝光效率的方法， 以克服公知技术中存在 的缺陷。
为实现上述目的， 本发明把需要光刻的图形分成两部分， 将大尺寸图形部分分解 出来采用光学曝光完成， 精细图形的光刻仍采用电子束光刻完成， 本发明还解决了其 间两种光刻方法的工艺兼容性问题， 使本发明的实用成为可能。
具体地， 本发明提供的提高电子束曝光效率的方法， 主要步骤如下- 步骤 1 ) 在需要光刻的片子上涂敷一层正性光刻胶， 进行前烘；
歩骤 2) 图形数据分割， 对大尺寸图形部分进行光学曝光， 进行后烘； 步骤 3 ) 正性光刻胶显形；
步骤 4) 等离子体氟化；
步骤 5 ) 烘烤加固；
步骤 6 ) 涂电子束负胶， 进行前烘；
步骤 7 ) 对精细图形部分进行电子束曝光；
歩骤 8 ) 后烘；
步骤 9 ) 电子束负胶显形， 完成光刻图形制备。
所述的方法，其中步骤 1 )中正性光刻胶膜厚为 200~400nm，前烘热板温度 90~95 ° C， 时间 60〜90秒。 所述的方法， 其中歩骤 2 )中大尺寸图形光学曝光采用分歩重复光刻机（Stepper) 进行， 后烘热板温度 100〜 115° C， 时间 60-90秒。
所述的方法， 其中歩骤 4 ) 中的等离子氟化条件为： 功率 30〜60W， 压力 300~550mTon-, 反应气体为 CF4， 其流量 100~300sccm， 氟化时间 20〜60秒。
所述的方法， 其中歩骤 5 ) 中烘烤加固的温度 130 160 ° C， 时间 40〜60分。 所述的方法， 其中歩骤 6 ) 中电子束负胶膜厚为 200~400nm， 前烘热板温度 100-115 ° C , 时间 1-3分钟。
所述的方法， 其中， 歩骤 8 ) 中后烘热板温度 100〜115° C, 时间 1〜3分钟。
本发明取得的效果是：
1 ) 采用两种光刻技术的结合， 解决了电子束曝光效率低的问题；
2 ) 分割需要曝光的图形数据， 大尺寸图形部分采用光学曝光的方法制备， 精细 图形部分采用电子束曝光制备， 这样不仅提高了图形的制备速度， 同时也保持了精细 图形所要求的高精度和分辨率；
3 ) 加快了工艺流程， 大幅度降低成本；
4) 工艺简便， 完全与 CMOS兼容， 不增加额外的设备。 附图说明
图 1 为本发明采用两种光刻方法形成的胶图形， 其中大尺寸图形 （A) 釆用正性 光刻胶光学曝光完成， 精细图形 （B ) 釆用负性电子束胶电子束曝光完成， 线宽约为 50-60纳米。 具体实施方式
针对电子束光刻速度太慢的问题， 本发明提出了一种如何克服电子束曝光效率低 的方法。 即把需要光刻的图形数据分成两部分， 将大尺寸图形部分分解出来采用光学 曝光制备， 精细图形部分的制备仍采用电子束光刻完成， 为解决这两种光刻方法的工 艺兼容性问题， 即在电子束曝光的显影过程中， 不使光学光刻己形成的大尺寸胶图形 被溶解而损坏， 本发明对光学曝光部分釆用正性光刻胶曝光， 显影后， 对胶进行氟化 处理并烘烤加固， 以增强其抗溶性和抗蚀性， 然后涂敷电子束负胶， 经电子束曝光并 显影后获得精细图形， 这一过程对已形成的正性胶图形形貌完整性没有影响， 使本发 明的实用成为可能。 本发明的主要步骤如下：
歩骤 1)在需要光刻的片子上涂敷一层正性光刻胶， 胶膜厚 20( 400nm; 前供： 热 板温度 90-95° C， 时间 60 90秒；
歩骤 2) 图形数据分割， 釆用分歩重复光刻机对大尺寸图形部分， 进行光学曝光， 接着后烘： 热板温度 100-110。 C， 1~1.5分钟;
歩骤 3) 显影， 40〜60秒；
歩骤 4)等离子体氟化，低功率 30-60W,压力为 300- 600mTorr， CF4流量 100~200， 氟化时间 20-60秒；
歩骤 5) 烘烤加固： 烤箱温度 130- 160°C， 时间 40-60分钟；
歩骤 6) 涂电子束负胶 200~400nm， 接着前烘： 热板温度 100~115°C， 时间 1~3分 钟；
步骤 7) 对精细图形部分进行电子束曝光；
步骤 8) 后烘： 热板温度 100~115°C， 时间 1~3分钟；
歩骤 9) 显影， 完成光刻图形制备。
以下所举实例只用于解释本发明， 并非限定本发明的范围。
步骤 1) 在需要光刻栅图形的片子上涂敷正性光刻胶， 膜厚 300〜400nm， 前烘 95 °C， 时间 60秒；
步骤 2)图形数据分割，对大尺寸图形部分进行光学曝光，后烘：热板温度 100-110 °C， 1分钟；
步骤 3) 对正性光刻胶显影， 50~60秒；
步骤 4) 等离子氟化， 功率 40W, 压力 400-500mTorr， CF4流量 100-120sccm, 时间 30~50秒；
歩骤 5) 烘烤加固： 140-160° C, 40- 50分钟;
步骤 6) 涂电子束负胶 300〜400nm， 前烘 100〜110， 1~3分钟；
步骤 7) 对精细图形部分进行电子束曝光；
步骤 8) 后烘： 热板温度 100〜110°C， 1〜3分钟；
歩骤 9)对电子束负胶显影， CD-26显影胶， 显影时间 6〜7分钟， 完成光刻图形制 备。
本发明完成的光刻图形可参见图 1所示， 其中大尺寸图形（A)采用正性光刻胶光 学曝光完成， 精细图形（B)采用负性电子束胶电子束曝光完成， 线宽约为 5060纳米。

Claims

权 利 要 求
1. 一种提高电子束曝光效率的方法， 主要步骤如下：
歩骤 1) 在需要光刻的片子上涂敷一层正性光刻胶， 进行前烘；
步骤 2) 图形数据分割， 对大尺寸图形部分进行光学曝光， 进行后烘；
歩骤 3) 正性光刻胶显形；
歩骤 4) 等离子体氟化；
歩骤 5) 烘烤加固；
歩骤 6) 涂电子束负胶， 进行前烘；
步骤 7) 对精细图形部分进行电子束曝光；
歩骤 8) 后烘；
歩骤 9) 电子束负胶显形， 完成光刻图形制备。
2. 根据权利要求 1所述的方法，其中，步骤 1)中正性光刻胶膜厚为 200~400nm， 前烘热板温度 90~95°C， 时间 60~90秒。
3. 根据权利要求 1所述的方法， 其中， 步骤 2) 中大尺寸图形光学曝光采用分步 重复光刻机进行， 后烘热板温度 100~115°C， 时间 60~90秒。
4. 根据权利要求 1 所述的方法， 其中， 步骤 4) 中的等离子氟化条件为： 功率 30-60W,压力 300~550mTorr，反应气体为 CF4，其流量 100~300sccm，氟化时间 20~60 秒。
5. 根据权利要求 1所述的方法， 其中， 步骤 5) 中烘烤加固的温度 130~160°C， 时间 40~60分。
6. 根据权利要求 1所述的方法，其中，步骤 6)中电子束负胶膜厚为 200~400nm， 前烘热板温度 100-115 °C, 时间 1-3分钟。
7. 根据权利要求 1所述的方法， 其中， 步骤 8) 中后烘热板温度 100~115°C， 时 间 1〜3分钟。
PCT/CN2011/070993 2010-11-10 2011-02-15 一种提高电子束光刻效率的方法 WO2012062058A1 (zh)

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