WO2012043349A1 - Suction plate - Google Patents
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- WO2012043349A1 WO2012043349A1 PCT/JP2011/071555 JP2011071555W WO2012043349A1 WO 2012043349 A1 WO2012043349 A1 WO 2012043349A1 JP 2011071555 W JP2011071555 W JP 2011071555W WO 2012043349 A1 WO2012043349 A1 WO 2012043349A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Definitions
- FIG. 3A shows an adsorption plate 1a having a mechanism for uniformly adsorbing a wafer (not shown) in a plane by forming a plurality of adsorption holes 2 on the surface.
- FIG. 3A shows, for example, a suction plate for heating a wafer.
- a plurality of suction holes 2 and three wafer detaching pin holes 6 are provided on the surface.
- FIG. 3B shows the number of suction holes 2 smaller than that of FIG. 3A, but a suction plate 1b having a mechanism for sucking the wafer by uniformly expanding the suction area in the plane by the connection grooves 3 provided with the suction holes 2 on the surface. It is.
- Examples of such a process include spin coating of a photoresist, baking, and curing of an organic passivation film.
- the wafer needs to be as close as possible to the suction plate to be held in a horizontal plane, and the center of the wafer needs to be concentrically aligned with the rotation axis of the suction plate.
- FIG. 3 is a plan view (a) taken along the line A-A ′ of (a), (b) and (a) of the suction plate of the present invention. It is sectional drawing for demonstrating the malfunction of the wafer adsorption
- the shape of the notch 18 may be any shape that does not hinder the exhaust and allows easy processing of the suction plate.
- the cross section of the surface parallel to the suction surface of the suction plate is an arc (elliptical arc). Or it is good also as a notch by two sides of a triangle, and a notch by three sides of a square and a trapezoid.
Abstract
[Objective] To provide a suction plate, wherein, when a ribbed wafer is sucked by the suction plate with the ribbed-side thereof facing down, the position of the ribbed wafer is not susceptible to being deviated. [Solution] The suction plate (10) has a mechanism wherein a ribbed semiconductor wafer, which is thick in ring-form at the outer circumference section at the back face thereof, and is thinner in recessed form at the inner circumference section thereof, is sucked and supported by a surface of a protruded section (14) of the suction plate (10) that fits into the recessed section. The suction plate (10) is provided with breathing notches (18) along the outer circumference of the surface of the protruded section (14).
Description
本発明は、円形状の半導体基板（以降半導体ウエハまたは単にウエハと記すことがある）を出発材料として半導体装置を製造するために所要のプロセス処理を施す際に、半導体ウエハを支持し固定する吸着プレートに関する。特には、直径８インチ以上で厚さが１５０μｍ程度以下の薄ウエハの取り扱いを容易にするために、ウエハ裏面の外周部をリング状に厚くした補強リブを形成したウエハに適した吸着プレートに関する。
The present invention provides an adsorption for supporting and fixing a semiconductor wafer when a required process is performed to manufacture a semiconductor device using a circular semiconductor substrate (hereinafter sometimes referred to as a semiconductor wafer or simply a wafer) as a starting material. Regarding plates. More particularly, the present invention relates to a suction plate suitable for a wafer having reinforcing ribs in which the outer peripheral portion of the back surface of the wafer is thickened in a ring shape in order to facilitate handling of a thin wafer having a diameter of 8 inches or more and a thickness of about 150 μm or less.
従来のウエハの吸着プレート１を図３（ａ）、（ｂ）の平面図に示す。図３（ａ）は吸着孔２を複数個表面に形成することにより、面内で均一にウエハ（図示せず）を吸着する機構を備える吸着プレート１ａである。図３（ａ）はたとえば、ウエハの加熱用の吸着プレートである。表面には複数の吸着孔２と３個のウエハの脱着用ピン孔６が設けられている。図３（ｂ）は（ａ）より少ない吸着孔２であるが、吸着孔２を表面に設けた接続溝３により、吸着面積を面内均一に広げてウエハを吸着する機構を有する吸着プレート１ｂである。たとえば、レジストのスピンコート用の吸着プレートとして用いられる。図３（ｃ）は（ａ）の一点鎖線Ｂ－Ｂ’線断面図である。（ａ）に対して（ｂ）では、吸着プレートの凸状部４表面に設けられるウエハの吸着孔２とこの吸着孔２を表面に形成した接続溝３で接続して吸着面を広くしている。図３では吸着孔２に接続される真空ポンプは省略されている。このような円形状であって、通常、静電吸着、真空吸着などの方法により吸着プレート上に載置されたウエハを吸着支持し固定し、所要のウエハプロセス処理が施される。そのようなプロセス処理として、フォトレジストのスピン塗布、ベーキング処理や有機パッシベーション膜の硬化処理などがある。これらの処理ではウエハが吸着プレート上にできる限り密着することにより水平面に保持され、吸着プレートの回転軸に対してウエハの中心が同心円状に合わせられている必要がある。
A conventional wafer suction plate 1 is shown in the plan views of FIGS. FIG. 3A shows an adsorption plate 1a having a mechanism for uniformly adsorbing a wafer (not shown) in a plane by forming a plurality of adsorption holes 2 on the surface. FIG. 3A shows, for example, a suction plate for heating a wafer. A plurality of suction holes 2 and three wafer detaching pin holes 6 are provided on the surface. FIG. 3B shows the number of suction holes 2 smaller than that of FIG. 3A, but a suction plate 1b having a mechanism for sucking the wafer by uniformly expanding the suction area in the plane by the connection grooves 3 provided with the suction holes 2 on the surface. It is. For example, it is used as a suction plate for resist spin coating. FIG. 3C is a cross-sectional view taken along the alternate long and short dash line B-B ′ in FIG. In (b), the suction surface is widened by connecting the suction hole 2 of the wafer provided on the surface of the convex portion 4 of the suction plate with the connection groove 3 formed on the surface. Yes. In FIG. 3, the vacuum pump connected to the suction hole 2 is omitted. Such a circular shape is usually subjected to suction support and fixing of a wafer placed on the suction plate by a method such as electrostatic suction or vacuum suction, and a required wafer process is performed. Examples of such a process include spin coating of a photoresist, baking, and curing of an organic passivation film. In these processes, the wafer needs to be as close as possible to the suction plate to be held in a horizontal plane, and the center of the wafer needs to be concentrically aligned with the rotation axis of the suction plate.
最近、パワー半導体装置用のシリコン半導体ウエハにも直径８インチのウエハの採用が検討されてきている。さらに、縦型パワー半導体装置ではオン電流が厚さ方向に流れるので、ウエハの厚さは耐圧が許容できる範囲で薄いほど抵抗が小さく損失が少なくなり、好ましい。しかし、ウエハの厚さを薄くすると、ウエハ径が大きくなるほど、プロセス中のウエハ割れ、カケや反りが大きくなり、その後のプロセス処理、良品率に悪影響を及ぼすので、たとえば、８インチ径のウエハを１５０μｍ以下の厚さに薄くして複数のウエハプロセス処理をすることは容易なことではない。
Recently, the adoption of a wafer having a diameter of 8 inches has been studied as a silicon semiconductor wafer for a power semiconductor device. Further, since the on-current flows in the thickness direction in the vertical power semiconductor device, it is preferable that the thickness of the wafer is as thin as possible within a range where the withstand voltage can be tolerated, because the resistance is small and the loss is reduced. However, if the thickness of the wafer is reduced, the larger the wafer diameter, the greater the wafer cracking, chipping and warping during the process, which will adversely affect the subsequent process processing and non-defective product rate. It is not easy to process a plurality of wafer processes by reducing the thickness to 150 μm or less.
このような薄ウエハのプロセス中のウエハ割れ、カケや反りを防ぐために、ウエハの裏面を研削してウエハの厚さを薄くする際に、図２に示すように、ウエハの外周部をリング状に厚いまま残して、中央部のみを凹部状に研削して薄くして厚い外周部に補強部（リブ５ａ）を形成するリブ付きウエハ５とする半導体ウエハの製造方法が知られている（特許文献１）。このリブ付きウエハ５を前述の吸着プレート１ａ上に適正に保持させるには吸着プレート１ａを前記リブ付きウエハ５裏面の凹部に嵌め込まれる凸状部４を有する形状の吸着プレート１ａが必要となる（特許文献２、４）。
In order to prevent such wafer cracking, chipping and warping during the thin wafer process, when the thickness of the wafer is reduced by grinding the back surface of the wafer, as shown in FIG. There is known a method of manufacturing a semiconductor wafer that is left as a thick wafer and is made thin by grinding only the central part into a concave shape to form a reinforcing part (rib 5a) on a thick outer peripheral part (patent) Reference 1). In order to properly hold the wafer 5 with ribs on the suction plate 1a, the suction plate 1a having a convex portion 4 into which the suction plate 1a is fitted into the concave portion on the back surface of the wafer 5 with ribs is required ( Patent Documents 2 and 4).
また、リブ付きウエハ５を吸着プレート１ａ上に載置する方法として吸着プレート１ａの表面に設けられるピン孔６を通して上下する３本以上のピン７で支持したリブ付きウエハ５を下降して吸着プレート１ａ表面に載置させる方法が知られている。その際、図２（ｂ）に示すように、ピン７の下降速度によっては、リブ付きウエハ５と吸着プレート１ａ間の空気が圧縮される。その反発により、図２（ｃ）に示すように、特にリブ付きウエハ５は薄くて軽いので、吸着プレート１ａ上の正しい位置からズレてリブが凸状部４表面に乗る状態で載置され、適正に吸着されないという課題が示されている（特許文献３）。
Further, as a method for placing the wafer 5 with ribs on the suction plate 1a, the wafer 5 with ribs supported by three or more pins 7 that move up and down through the pin holes 6 provided on the surface of the suction plate 1a is lowered to the suction plate. A method of placing it on the surface of 1a is known. At this time, as shown in FIG. 2B, depending on the descending speed of the pins 7, air between the ribbed wafer 5 and the suction plate 1a is compressed. Due to the repulsion, as shown in FIG. 2 (c), the ribbed wafer 5 is particularly thin and light, so that the rib is placed on the surface of the convex portion 4 with a deviation from the correct position on the suction plate 1a. The subject that it is not adsorb | sucking appropriately is shown (patent document 3).
しかしながら、前記特許文献３にも記載されるように、吸着プレート１ａ上へウエハを載置させる際に位置ズレを起こすと、特にリブ付きウエハ５では、裏面の凹部に吸着プレート１ａの凸状部４が嵌らず、裏面リブ部が吸着プレート１ａの凸状部４表面に乗り上げ易くなる（図２（ｂ）、（ｃ））。この場合、リブ付きウエハ５と吸着プレート１ａの間に隙間が生じて密着不足になる。その結果、吸着プレート１ａが加温機能を有する場合は、リブ付きウエハ５の温度の上昇が適正にされず、また、フォトレジストのベーキング処理が不十分になり、露光工程は焦点が合わせ難くなり、解像度低下などの不具合が生じる。
However, as described in Patent Document 3, when the wafer is placed on the suction plate 1a, if the position is shifted, particularly in the wafer 5 with ribs, the convex portion of the suction plate 1a is formed in the concave portion on the back surface. 4 does not fit, and the back rib portion easily rides on the surface of the convex portion 4 of the suction plate 1a (FIGS. 2B and 2C). In this case, a gap is formed between the ribbed wafer 5 and the suction plate 1a, resulting in insufficient adhesion. As a result, when the suction plate 1a has a heating function, the temperature rise of the ribbed wafer 5 is not appropriate, the baking process of the photoresist becomes insufficient, and the exposure process becomes difficult to focus. Inconveniences such as reduced resolution occur.
また、前記特許文献３の記載にもあるように、通常、吸着プレート１ａの最表面には、ピン７が上下するための複数のピン孔６が設けられている。リブ付きウエハ５を裏面側の凹部を下にして載せると、そのピン孔６をピン７が上下することでリブ付きウエハ５を吸着プレート１ａから脱着させる機構となっている。さらに、リブ付きウエハ５を吸着プレート１ａに固定させるために、真空吸着機構や、静電吸着機構（図示せず）が設けられている。真空吸着機構では空気を吸い込む吸着孔２が設けられている。その吸着孔２を通してリブ付きウエハ５を吸着固定する。その際、リブ付きウエハ５を吸着プレート１ａに吸着固定するために、リブ付きウエハ５を下降させて吸着プレート１ａに近づけていくと、リブ付きウエハ５と吸着プレート１ａ間の隙間にある空気が抜けようとする。リブ付きウエハ５の下降速度に対して、この空間の空気の抜ける速度が不充分の場合、リブ付きウエハ５と吸着プレート１ａとの間に吸気が閉じこめられる。すると、リブ付きウエハ５がこの閉じ込められた空気層に乗ってしまい、横滑りをおこし、位置ズレを起こす。
Also, as described in Patent Document 3, normally, a plurality of pin holes 6 for moving pins 7 up and down are provided on the outermost surface of the suction plate 1a. When the ribbed wafer 5 is placed with the concave portion on the back side down, the pin 7 is moved up and down by the pins 7 so that the ribbed wafer 5 is detached from the suction plate 1a. Furthermore, in order to fix the ribbed wafer 5 to the suction plate 1a, a vacuum suction mechanism or an electrostatic suction mechanism (not shown) is provided. In the vacuum suction mechanism, suction holes 2 for sucking air are provided. The ribbed wafer 5 is sucked and fixed through the suction holes 2. At that time, in order to attract and fix the ribbed wafer 5 to the suction plate 1a, when the ribbed wafer 5 is lowered and brought closer to the suction plate 1a, the air in the gap between the ribbed wafer 5 and the suction plate 1a is removed. Try to come off. When the speed at which the air escapes from the space is insufficient with respect to the descent speed of the ribbed wafer 5, the intake air is confined between the ribbed wafer 5 and the suction plate 1a. Then, the wafer 5 with ribs rides on this trapped air layer, causes a side slip, and causes a positional shift.
静電吸着機構では吸着孔２は無いが、リブ付きウエハ５を静電吸着機構へ載置する際の下降速度が速いと、リブ付きウエハ５と静電吸着機構との間に吸気が閉じこめられる。すると、リブ付きウエハ５がこの閉じ込められた空気層に乗ってしまい、横滑りをおこし、位置ズレを起こす。
Although there is no suction hole 2 in the electrostatic chucking mechanism, if the lowering speed when the wafer 5 with ribs is placed on the electrostatic chucking mechanism is fast, the intake air is confined between the wafer 5 with ribs and the electrostatic chucking mechanism. . Then, the wafer 5 with ribs rides on this trapped air layer, causes a side slip, and causes a positional shift.
そこで、リブ付きウエハ５の吸着時に、前述の横滑りを起こさないために、吸着プレート１ａの表面に吸着孔２を多くしたり、あるいは吸着孔２の径を大きくすることがある。
吸着プレート１ａが加温機構を備えている場合、吸着孔２の部分はリブ付きウエハ５に充分に熱が伝達できない。また吸着孔２の径が大きいと、径の大きな吸着孔２の付近でリブ付きウエハ５に局所的に過度なウエハたわみが発生するので好ましくない。 Therefore, in order to prevent the above-mentioned side slip at the time of suction of thewafer 5 with ribs, the suction holes 2 may be increased on the surface of the suction plate 1a or the diameter of the suction holes 2 may be increased.
When thesuction plate 1a is provided with a heating mechanism, the portion of the suction hole 2 cannot sufficiently transfer heat to the ribbed wafer 5. Moreover, if the diameter of the suction hole 2 is large, excessive wafer deflection is locally generated in the ribbed wafer 5 in the vicinity of the suction hole 2 having a large diameter, which is not preferable.
吸着プレート１ａが加温機構を備えている場合、吸着孔２の部分はリブ付きウエハ５に充分に熱が伝達できない。また吸着孔２の径が大きいと、径の大きな吸着孔２の付近でリブ付きウエハ５に局所的に過度なウエハたわみが発生するので好ましくない。 Therefore, in order to prevent the above-mentioned side slip at the time of suction of the
When the
また、前述の横滑りを起こさないために、リブ付きウエハ５と吸着プレート１ａとの間の空気を排出する能力を強くすると、排気能力に応じて真空ポンプが大型化したり、吸着力が強すぎると、吸着孔２の付近でリブ付きウエハ５に局所的なたわみが発生し、その力によっては割れが発生したりする。
Further, in order not to cause the above-mentioned side slip, if the ability to exhaust air between the ribbed wafer 5 and the suction plate 1a is strengthened, the vacuum pump becomes larger or the suction force is too strong depending on the exhaust ability. In the vicinity of the suction holes 2, local deflection occurs in the ribbed wafer 5, and cracks may occur depending on the force.
また、リブ付きウエハ５と吸着プレート１ａとの間に滞留する空気が抜けるのを待つためにウエハの上下速度を遅くすると、ウエハ処理時間が長くなり、一定時間内の処理可能枚数が減少する。
Further, if the vertical speed of the wafer is decreased in order to wait for the air staying between the ribbed wafer 5 and the suction plate 1a to escape, the wafer processing time becomes longer, and the number of wafers that can be processed within a certain time decreases.
また、空気を逃がす目的で吸着プレート１ａの径を小さくする、すなわち、リブ付きウエハ５のリブ部と吸着プレート１ａとの隙間を大きくすることがある。しかしながら、吸着プレート１ａで支持されないリブ付きウエハ５の表面は、リブ付きウエハ５の温度の上昇が適正にされず、フォトレジストのベーキング処理が不十分となる。また、露光工程は焦点が合わせ難くなり、解像度低下などの不具合が生じる。従って、リブ付きウエハ５の表面に無効領域が増えるので好ましくない。
Further, the diameter of the suction plate 1a may be reduced for the purpose of releasing air, that is, the gap between the rib portion of the ribbed wafer 5 and the suction plate 1a may be increased. However, the surface of the ribbed wafer 5 that is not supported by the suction plate 1a does not have an appropriate rise in temperature of the ribbed wafer 5, and the photoresist baking process becomes insufficient. In addition, the exposure process is difficult to focus on, causing problems such as a reduction in resolution. Therefore, the ineffective area increases on the surface of the ribbed wafer 5, which is not preferable.
本発明は、以上説明した点に鑑みてなされたものであり、本発明の目的は、リブ付きウエハを吸着プレートにリブ側を下にして吸着させる際に、リブ付きウエハの位置ズレを起こし難い吸着プレートを提供することである。
The present invention has been made in view of the above-described points, and an object of the present invention is to hardly cause positional deviation of the ribbed wafer when the ribbed wafer is sucked to the suction plate with the rib side facing down. An adsorption plate is provided.
前記本発明の目的を達成するために、請求の範囲第１項に記載の発明では、裏面の外周部がリング状に厚く、内周部が凹部状に薄いリブ付き半導体ウエハを、前記凹部に嵌まる凸状部表面で吸着支持する機構を有する吸着プレートが、前記凸状部表面の外周に沿って通気用切り欠きを備える吸着プレートとする。前記吸着プレートがリブ付き半導体ウエハを支持して上下させるための複数のピンと該ピンをそれぞれ通すピン孔を備えていることが好ましい。前記通気用切り欠きが吸着プレートの凸状部の外周に複数個、対称的に配置されていることも好ましい。
In order to achieve the object of the present invention, in the invention described in claim 1, a ribbed semiconductor wafer having a thin outer peripheral portion on the back surface in a ring shape and a thin inner peripheral portion in a concave shape is formed in the concave portion. The suction plate having a mechanism for sucking and supporting the surface of the convex portion to be fitted is a suction plate provided with a notch for ventilation along the outer periphery of the surface of the convex portion. It is preferable that the suction plate includes a plurality of pins for supporting the ribbed semiconductor wafer to move up and down and pin holes through which the pins pass. It is also preferable that a plurality of ventilation notches are arranged symmetrically on the outer periphery of the convex portion of the suction plate.
本発明によれば、リブ付きウエハを吸着プレートにリブ側を下にして吸着させる際に、リブ付きウエハの位置ズレを起こし難い吸着プレートを提供することができる。
本発明の上記および他の目的、特徴および利点は本発明の例として好ましい実施の形態を表す添付の図面と関連した以下の説明により明らかになるであろう。 ADVANTAGE OF THE INVENTION According to this invention, when making a wafer with a rib adsorb | suck with a rib side down to an adsorption | suction plate, the adsorption plate which cannot raise | generate a position shift of a wafer with a rib can be provided.
These and other objects, features and advantages of the present invention will become apparent from the following description taken in conjunction with the accompanying drawings which illustrate preferred embodiments by way of example of the present invention.
本発明の上記および他の目的、特徴および利点は本発明の例として好ましい実施の形態を表す添付の図面と関連した以下の説明により明らかになるであろう。 ADVANTAGE OF THE INVENTION According to this invention, when making a wafer with a rib adsorb | suck with a rib side down to an adsorption | suction plate, the adsorption plate which cannot raise | generate a position shift of a wafer with a rib can be provided.
These and other objects, features and advantages of the present invention will become apparent from the following description taken in conjunction with the accompanying drawings which illustrate preferred embodiments by way of example of the present invention.
以下、本発明の吸着プレートの実施例について、図面を参照して詳細に説明する。本発明はその要旨を超えない限り、以下に説明する実施例の記載に限定されるものではない。
Hereinafter, embodiments of the suction plate of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the description of the examples described below unless it exceeds the gist.
図１は本発明の吸着プレートの実施例１を示す、異なる吸着孔パターンの平面図（ａ）、（ｂ）と、（ａ）の一点鎖線Ａ－Ａ’線断面図（ｃ）である。図１（ａ）、（ｂ）はリブ付きウエハを吸着するために、吸着プレート１０の凸状部１４表面に設けられている吸着孔１１の配置と吸着孔１１から接続される接続溝１３のパターンが異なる。材料は真空吸着方式ならば、ステンレスなどの金属であり、静電吸着ならば、内部に電極が埋め込まれた絶縁樹脂の成型品である。真空吸着のための負圧は吸着孔に接続される図示しない真空ポンプにより行われる。静電吸着では、図５のように、絶縁樹脂からなる吸着樹脂プレート３０の内部に埋め込まれた金属電極３１と吸着樹脂プレート３０上に載置されるウエハ３２間に電圧印加される際に、ウエハ３２と吸着樹脂プレート３０表面に生じる互いに異なる極性の静電気により吸着され固定される。
FIG. 1 is a plan view (a), (b) of different suction hole patterns, and a cross-sectional view (a) along the alternate long and short dash line A-A ′, showing Example 1 of the suction plate of the present invention. FIGS. 1A and 1B show the arrangement of the suction holes 11 provided on the surface of the convex portion 14 of the suction plate 10 and the connection grooves 13 connected from the suction holes 11 in order to suck the wafer with ribs. The pattern is different. The material is a metal such as stainless steel in the case of a vacuum suction method, and is a molded product of an insulating resin in which electrodes are embedded in the case of electrostatic suction. The negative pressure for vacuum suction is performed by a vacuum pump (not shown) connected to the suction hole. In the electrostatic adsorption, as shown in FIG. 5, when a voltage is applied between the metal electrode 31 embedded in the adsorption resin plate 30 made of an insulating resin and the wafer 32 placed on the adsorption resin plate 30, It is adsorbed and fixed by static electricity having different polarities generated on the surfaces of the wafer 32 and the adsorption resin plate 30.
吸着プレート１０は凸状部１４と、その下部にあるベース１５部分から構成される。凸状部１４とベース１５部分は図１のように一体化形状でも良いし、上下に分離されていても良い。凸状部１４の厚さはリブ付きウエハのリブと凹部との段差より厚くする必要がある。直径８インチのウエハでは当初のウエハ厚は７５０μｍ程度であるので、凹部のウエハ厚が１００μｍの場合リブの段差は６５０μｍとなるので、凸状部１４の厚さは１ｍｍ程度以上であれば良い。この凸状部１４はリブ付きウエハの裏面に設けられているリブ部の内径にできるだけ近い外径、たとえば、直径２００ｍｍウエハの裏面の外周に幅３ｍｍのリング状リブが設けられ、その内径が１９４ｍｍの場合、凸状部１４の外径は１９３ｍｍ程度にされる。このように、ウエハ裏面のリブの内径と吸着プレート１０の凸状部１４の外径の差は数ｍｍ以下の近い径にされるので、少しの位置ズレでも、リブ付きウエハ２０のリブが吸着プレート上に乗り易くなり、特に本発明の効果が有効となる。静電吸着方式の場合は真空吸着方式に必要な吸着孔１１は不要である。いずれの方式でも、リブ付きウエハを吸着プレート上に脱着させるためのピン１７とこのピンを通すピン孔１６は必要である。ピン孔１６とピン１７は少なくとも３個は必要である。
The suction plate 10 is composed of a convex portion 14 and a base 15 portion below the convex portion 14. The convex portion 14 and the base 15 portion may be integrated as shown in FIG. 1 or may be separated vertically. The thickness of the convex portion 14 needs to be thicker than the step between the rib and the concave portion of the ribbed wafer. Since the initial wafer thickness of an 8-inch diameter wafer is about 750 μm, the step of the rib is 650 μm when the wafer thickness of the recess is 100 μm. Therefore, the thickness of the convex portion 14 may be about 1 mm or more. The convex portion 14 has an outer diameter as close as possible to the inner diameter of the rib portion provided on the rear surface of the wafer with ribs, for example, a ring-shaped rib having a width of 3 mm is provided on the outer periphery of the rear surface of the wafer having a diameter of 200 mm, and the inner diameter is 194 mm. In this case, the outer diameter of the convex portion 14 is about 193 mm. As described above, the difference between the inner diameter of the rib on the back surface of the wafer and the outer diameter of the convex portion 14 of the suction plate 10 is set to a close diameter of several millimeters or less. It becomes easy to get on the plate, and the effect of the present invention is particularly effective. In the case of the electrostatic adsorption method, the adsorption holes 11 necessary for the vacuum adsorption method are not necessary. In any system, the pin 17 for detaching the wafer with ribs from the suction plate and the pin hole 16 through which the pin passes are necessary. At least three pin holes 16 and 17 are necessary.
図１（ｃ）の断面図ではピン孔１６とピンは１個しか示されていないが、図１（ａ）、（ｂ）に示すように３個が吸着プレート１０の表面に配置され、ピン孔１６は吸着プレート１０を貫通している。この貫通した３個のピン孔１６を通る３本のピンの上にリブ付きウエハ（図示せず）を載せ、ピン１７を下降させてリブ付きウエハを吸着プレート１０上に載せる。
Although only one pin hole 16 and one pin are shown in the cross-sectional view of FIG. 1C, three pins are arranged on the surface of the suction plate 10 as shown in FIGS. The hole 16 penetrates the suction plate 10. A wafer with ribs (not shown) is placed on the three pins passing through the three pin holes 16 that have passed through, and the pins 17 are lowered to place the wafer with ribs on the suction plate 10.
図１に示す例では、吸着プレート１０の凸状部１４の外周に、挟まれた空気を逃がすための切り欠き１８が４箇所設けられている。このため、下降するウエハが吸着プレート１０に近づいた際に、吸着プレート１０とリブ付きウエハとの間に挟まれる空気は、切り欠き１８から速やかに排出され、吸着プレート１０とリブ付きウエハとの間に挟まれて滞留する空気層が生じない。
In the example shown in FIG. 1, four notches 18 are provided on the outer periphery of the convex portion 14 of the suction plate 10 for releasing the trapped air. For this reason, when the descending wafer approaches the suction plate 10, the air sandwiched between the suction plate 10 and the ribbed wafer is quickly discharged from the notch 18, and the suction plate 10 and the ribbed wafer are There is no air layer that stays between them.
よって、リブ付きウエハが吸着プレート１０とリブ付きウエハとの間に挟まれて滞留する空気層に乗って横ズレしたり、位置ズレを起こすことはない。
この切り欠き１８は１箇所でも効果があるが、吸着プレート１０の凸状部１４の円周に対して対称的な複数配置がより好ましい。 Therefore, the ribbed wafer does not shift laterally or cause a positional shift on the air layer that is sandwiched between thesuction plate 10 and the ribbed wafer.
Although thisnotch 18 is effective even at one place, a plurality of symmetrical arrangements with respect to the circumference of the convex portion 14 of the suction plate 10 are more preferable.
この切り欠き１８は１箇所でも効果があるが、吸着プレート１０の凸状部１４の円周に対して対称的な複数配置がより好ましい。 Therefore, the ribbed wafer does not shift laterally or cause a positional shift on the air layer that is sandwiched between the
Although this
なお、リブ付きウエハの切り欠き１８の上に載置される部分は、吸着プレート１０による支持が無いため、所望の加温や吸着力が得られない惧れがある。
したがって、切り欠き１８は、ウエハからのチップの取れ数に影響を与えない場所に設けることが望ましい。 In addition, since the part mounted on thenotch 18 of the wafer with a rib is not supported by the suction plate 10, there is a possibility that desired heating or suction force cannot be obtained.
Therefore, it is desirable to provide thenotch 18 at a place where the number of chips taken from the wafer is not affected.
したがって、切り欠き１８は、ウエハからのチップの取れ数に影響を与えない場所に設けることが望ましい。 In addition, since the part mounted on the
Therefore, it is desirable to provide the
図４は、吸着プレートに設けた切り欠きの位置とウエハ上の有効チップの位置関係を示す平面図である。図４に示すように、吸着プレートの凸状部１４と、その上に載置されたリブ付きウエハ２０の表面に形成される矩形状のチップの配置を示している。矩形上のチップは破線で示し、形状的に良品となるチップ（有効チップ）を破線の丸印で示す。
FIG. 4 is a plan view showing the positional relationship between the positions of the notches provided on the suction plate and the effective chips on the wafer. As shown in FIG. 4, the arrangement | positioning of the rectangular-shaped chip | tip formed in the surface of the convex-shaped part 14 of the adsorption | suction plate and the wafer 20 with the rib mounted on it is shown. Chips on the rectangle are indicated by broken lines, and chips that are non-defective in shape (effective chips) are indicated by broken circles.
切り欠き１８を、図４に示すように、ノッチＮの近くに１箇所（１８－１）設けるとよい。さらに、吸着プレートの中心に対して点対称となる位置（１８－２）に、対称的に配置させることでバランスよく排気することができる。図４の例では、ノッチＮ付近、吸着プレートの中心に対して点対称となる位置、これらを結ぶ直径に直交する位置（１８－３，１８－４）の計４箇所に切り欠き１８が設けられている。
As shown in FIG. 4, the notch 18 is preferably provided at one location (18-1) near the notch N. Further, the exhaust gas can be exhausted in a balanced manner by being arranged symmetrically at a position (18-2) that is point-symmetric with respect to the center of the suction plate. In the example of FIG. 4, notches 18 are provided at a total of four locations, notch N, a position that is point-symmetric with respect to the center of the suction plate, and a position (18-3, 18-4) perpendicular to the diameter connecting them. It has been.
これらの位置は、リブ付きウエハ２０上に形成される半導体素子のチップサイズが変更されて、図４の点線で示されているチップの位置が変更された場合であっても、有効チップの領域に重なりにくい位置である。あるいは、図４の左右の位置（１８－３，１８－４）の２箇所としてもよい。
These positions are effective chip areas even when the chip size of the semiconductor element formed on the ribbed wafer 20 is changed and the position of the chip indicated by the dotted line in FIG. 4 is changed. It is a position that is difficult to overlap. Or it is good also as two places of the left-right position (18-3, 18-4) of FIG.
また、切り欠き１８は、有効チップの領域に重ならない位置に設ければよい。バランスよく排気するためには、切り欠き１８を複数個所に設けることが望ましい。
切り欠き１８を複数個所に設ける場合は、上述の例のように、２箇所または４箇所としてもよい。例えば、オリエンテーションフラットが設けられているウエハの場合は、オリエンテーションフラットの近くに１箇所、そのほかは上記と同様に設けるとよい。 Further, thecutout 18 may be provided at a position that does not overlap the area of the effective chip. In order to exhaust in a well-balanced manner, it is desirable to provide notches 18 at a plurality of locations.
When thecutouts 18 are provided at a plurality of locations, the number of the cutouts 18 may be two or four as in the above example. For example, in the case of a wafer provided with an orientation flat, it may be provided in the same manner as described above except for one place near the orientation flat.
切り欠き１８を複数個所に設ける場合は、上述の例のように、２箇所または４箇所としてもよい。例えば、オリエンテーションフラットが設けられているウエハの場合は、オリエンテーションフラットの近くに１箇所、そのほかは上記と同様に設けるとよい。 Further, the
When the
あるいは、切り欠き１８を３箇所に設けてもよいし、更に多数設けてもよい。バランスよく排気するという観点からは、切り欠き１８は、吸着プレートの外周に対称的もしくは均等に配置されるのが望ましい。
Alternatively, the notches 18 may be provided at three locations, or a larger number may be provided. From the viewpoint of exhausting in a well-balanced manner, the notches 18 are desirably arranged symmetrically or evenly on the outer periphery of the suction plate.
また、切り欠き１８の大きさは、できる限りチップの取れ数に悪影響を及ぼさない大きさが好ましい。たとえば、吸着プレートの直径方向には２ｍｍ以下で、円周方向には１０ｍｍ程度の寸法にすることが好ましい。
Further, the size of the notch 18 is preferably a size that does not adversely affect the number of chips to be taken as much as possible. For example, it is preferable that the dimension is about 2 mm or less in the diameter direction of the suction plate and about 10 mm in the circumferential direction.
また、切り欠き１８の形状は、排気を妨げず、吸着プレートの加工がしやすい形状であればよい。図１の例では、吸着プレートの吸着面と平行な面の断面は、円弧（楕円弧）状である。あるいは、三角形の２辺による切り欠きや、方形、台形の３辺による切り欠きとしてもよい。
Also, the shape of the notch 18 may be any shape that does not hinder the exhaust and allows easy processing of the suction plate. In the example of FIG. 1, the cross section of the surface parallel to the suction surface of the suction plate is an arc (elliptical arc). Or it is good also as a notch by two sides of a triangle, and a notch by three sides of a square and a trapezoid.
また、これと直交する断面は、図１（ｃ）のごとくテーパー状である。このほか吸着面に対して垂直に切り欠いてもよいし、曲線的に切り欠いてもよい。
これまでは、真空吸着方式を例に説明したが、静電吸着方式における吸着プレートについても同様に適用することができる。 Moreover, the cross section orthogonal to this is a taper shape like FIG.1 (c). In addition, you may cut out perpendicularly | vertically with respect to an adsorption | suction surface, and you may cut out like a curve.
So far, the vacuum suction method has been described as an example, but the same can be applied to the suction plate in the electrostatic suction method.
これまでは、真空吸着方式を例に説明したが、静電吸着方式における吸着プレートについても同様に適用することができる。 Moreover, the cross section orthogonal to this is a taper shape like FIG.1 (c). In addition, you may cut out perpendicularly | vertically with respect to an adsorption | suction surface, and you may cut out like a curve.
So far, the vacuum suction method has been described as an example, but the same can be applied to the suction plate in the electrostatic suction method.
以上実施例１に説明した本発明によれば、８インチ径の大口径の半導体ウエハであって、１５０μｍ以下の厚さの薄ウエハであっても、リブ付きウエハの位置ズレを起こし難い吸着プレートとすることができ、その後のプロセス処理の良品率を高くすることができる。
According to the present invention described in the first embodiment, the suction plate which is difficult to cause displacement of the ribbed wafer even if it is a semiconductor wafer having a large diameter of 8 inches and a thin wafer having a thickness of 150 μm or less. And the non-defective product rate in the subsequent process processing can be increased.
上記については単に本発明の原理を示すものである。さらに、多数の変形、変更が当業者にとって可能であり、本発明は上記に示し、説明した正確な構成および応用例に限定されるものではなく、対応するすべての変形例および均等物は、添付の請求項およびその均等物による本発明の範囲とみなされる。
The above merely shows the principle of the present invention. In addition, many modifications and changes can be made by those skilled in the art, and the present invention is not limited to the precise configuration and application shown and described above, and all corresponding modifications and equivalents may be And the equivalents thereof are considered to be within the scope of the invention.
１、１０ 吸着プレート
２、１１ 吸着孔
３、１３ 接続溝
４、１４ 凸状部
５、２０ リブ付きウエハ
６、１６ ピン孔
７、１７ ピン
１５ ベース
１８ 切り欠き
３０ 吸着樹脂プレート
３１ 金属電極
３２ ウエハ
Ａ－Ａ’、Ｂ－Ｂ’ 切断線 DESCRIPTION OFSYMBOLS 1,10 Suction plate 2,11 Suction hole 3,13 Connection groove 4,14 Convex part 5,20 Ribbed wafer 6,16 Pin hole 7,17 Pin 15 Base 18 Notch 30 Suction resin plate 31 Metal electrode 32 Wafer AA ', BB' cutting line
２、１１ 吸着孔
３、１３ 接続溝
４、１４ 凸状部
５、２０ リブ付きウエハ
６、１６ ピン孔
７、１７ ピン
１５ ベース
１８ 切り欠き
３０ 吸着樹脂プレート
３１ 金属電極
３２ ウエハ
Ａ－Ａ’、Ｂ－Ｂ’ 切断線 DESCRIPTION OF
Claims (4)
- 裏面の外周部がリング状に厚く、内周部が凹部状に薄いリブ付き半導体ウエハを、前記凹部に嵌まる凸状部表面で吸着支持する機構を有する吸着プレートが、前記凸状部表面の外周に沿って通気用切り欠きを備えることを特徴とする吸着プレート。 An adsorption plate having a mechanism for adsorbing and supporting a ribbed semiconductor wafer having a thick outer ring on the back surface and a thin rib on the inner circumference on the surface of the convex part that fits into the concave part. A suction plate comprising a vent cutout along the outer periphery.
- 前記吸着プレートが前記リブ付き半導体ウエハを支持して上下させるための複数のピンと該ピンをそれぞれ通すピン孔を備えていることを特徴とする請求の範囲第１項記載の吸着プレート。 The suction plate according to claim 1, wherein the suction plate includes a plurality of pins for supporting the ribbed semiconductor wafer to move up and down and pin holes through which the pins pass.
- 前記通気用切り欠きが前記吸着プレートの凸状部の外周に複数個配置されていることを特徴とする請求の範囲第１項記載の吸着プレート。 The suction plate according to claim 1, wherein a plurality of the ventilation notches are arranged on an outer periphery of the convex portion of the suction plate.
- 前記複数の通気用切り欠きは、対称的に配置もしくは均等な間隔で配置されていることを特徴とする請求の範囲第３項記載の吸着プレート。 The suction plate according to claim 3, wherein the plurality of ventilation notches are arranged symmetrically or at equal intervals.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201180038773.3A CN103069561B (en) | 2010-09-28 | 2011-09-22 | Adsorption plate |
| JP2012536376A JPWO2012043349A1 (en) | 2010-09-28 | 2011-09-22 | Suction plate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010216970 | 2010-09-28 | ||
| JP2010-216970 | 2010-09-28 |
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| WO2012043349A1 true WO2012043349A1 (en) | 2012-04-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2011/071555 WO2012043349A1 (en) | 2010-09-28 | 2011-09-22 | Suction plate |
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| Country | Link |
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| JP (1) | JPWO2012043349A1 (en) |
| CN (1) | CN103069561B (en) |
| WO (1) | WO2012043349A1 (en) |
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| CN103531511A (en) * | 2012-07-04 | 2014-01-22 | 上海微电子装备有限公司 | Sucking disc, wafer bearing stage using same and wafer adsorption method |
| US20140091537A1 (en) * | 2012-10-02 | 2014-04-03 | Disco Corporation | Chuck table |
| JP2014216440A (en) * | 2013-04-25 | 2014-11-17 | 富士電機株式会社 | Chucking plate for semiconductor wafer process |
| CN105448797A (en) * | 2014-09-19 | 2016-03-30 | 英飞凌科技股份有限公司 | Wafer arrangement and method for processing a wafer |
| WO2019194264A1 (en) | 2018-04-05 | 2019-10-10 | 日油株式会社 | Phosphorylcholine group-containing polysiloxane monomer |
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| JP6510461B2 (en) * | 2016-05-25 | 2019-05-08 | 日本特殊陶業株式会社 | Substrate holding device |
| CN108735648B (en) * | 2017-04-18 | 2022-11-08 | 日新离子机器株式会社 | Electrostatic chuck |
| CN112309947A (en) * | 2019-07-29 | 2021-02-02 | 上海微电子装备（集团）股份有限公司 | Adsorption device, exposure table, photoetching equipment and adsorption method |
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| JP2014216440A (en) * | 2013-04-25 | 2014-11-17 | 富士電機株式会社 | Chucking plate for semiconductor wafer process |
| CN105448797A (en) * | 2014-09-19 | 2016-03-30 | 英飞凌科技股份有限公司 | Wafer arrangement and method for processing a wafer |
| US9966293B2 (en) | 2014-09-19 | 2018-05-08 | Infineon Technologies Ag | Wafer arrangement and method for processing a wafer |
| WO2019194264A1 (en) | 2018-04-05 | 2019-10-10 | 日油株式会社 | Phosphorylcholine group-containing polysiloxane monomer |
| KR20200128081A (en) | 2018-04-05 | 2020-11-11 | 니치유 가부시키가이샤 | Phosphorylcholine group-containing polysiloxane monomer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103069561A (en) | 2013-04-24 |
| JPWO2012043349A1 (en) | 2014-02-06 |
| CN103069561B (en) | 2016-01-20 |
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