WO2012036504A3 - 태양 전지 및 이의 제조 방법 - Google Patents

태양 전지 및 이의 제조 방법 Download PDF

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Publication number
WO2012036504A3
WO2012036504A3 PCT/KR2011/006850 KR2011006850W WO2012036504A3 WO 2012036504 A3 WO2012036504 A3 WO 2012036504A3 KR 2011006850 W KR2011006850 W KR 2011006850W WO 2012036504 A3 WO2012036504 A3 WO 2012036504A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
barrier layer
manufacturing same
support substrate
photoelectric conversion
Prior art date
Application number
PCT/KR2011/006850
Other languages
English (en)
French (fr)
Other versions
WO2012036504A2 (ko
Inventor
배도원
Original Assignee
엘지이노텍주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍주식회사 filed Critical 엘지이노텍주식회사
Priority to JP2013529068A priority Critical patent/JP5913320B2/ja
Priority to CN201180039615.XA priority patent/CN103069575B/zh
Priority to EP11825464.8A priority patent/EP2503599B1/en
Publication of WO2012036504A2 publication Critical patent/WO2012036504A2/ko
Publication of WO2012036504A3 publication Critical patent/WO2012036504A3/ko
Priority to US14/527,217 priority patent/US9356172B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

실시예에 따른 태양 전지는 지지 기판; 상기 지지 기판 상에 배치되는 배리어층; 및 상기 배리어층 상에 배치되는 광전 변환부를 포함하며, 상기 배리어층은 서로 다른 기공도를 가지는 제 1 배리어층 및 제 2 배리어층을 포함한다.
PCT/KR2011/006850 2010-09-16 2011-09-16 태양 전지 및 이의 제조 방법 WO2012036504A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013529068A JP5913320B2 (ja) 2010-09-16 2011-09-16 太陽電池
CN201180039615.XA CN103069575B (zh) 2010-09-16 2011-09-16 太阳能电池及其制造方法
EP11825464.8A EP2503599B1 (en) 2010-09-16 2011-09-16 Solar cell
US14/527,217 US9356172B2 (en) 2010-09-16 2014-10-29 Solar cell and method for manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100091277A KR101091375B1 (ko) 2010-09-16 2010-09-16 태양 전지 및 이의 제조 방법
KR10-2010-0091277 2010-09-16

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US13823803 A-371-Of-International 2011-09-16
US14/527,217 Continuation US9356172B2 (en) 2010-09-16 2014-10-29 Solar cell and method for manufacturing same

Publications (2)

Publication Number Publication Date
WO2012036504A2 WO2012036504A2 (ko) 2012-03-22
WO2012036504A3 true WO2012036504A3 (ko) 2012-07-19

Family

ID=45505900

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/006850 WO2012036504A2 (ko) 2010-09-16 2011-09-16 태양 전지 및 이의 제조 방법

Country Status (5)

Country Link
EP (1) EP2503599B1 (ko)
JP (1) JP5913320B2 (ko)
KR (1) KR101091375B1 (ko)
CN (1) CN103069575B (ko)
WO (1) WO2012036504A2 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012169845A2 (ko) * 2011-06-10 2012-12-13 주식회사 포스코 태양전지 기판과 그 제조방법 및 이를 이용한 태양전지
KR101865953B1 (ko) * 2012-09-12 2018-06-08 엘지이노텍 주식회사 태양전지 및 이의 제조방법
EP2832898A1 (de) * 2014-02-05 2015-02-04 ThyssenKrupp Steel Europe AG Plasmaelektrolytisch veredeltes Bauteil und Verfahren zu seiner Herstellung
CN105226118B (zh) * 2014-06-05 2017-04-12 中物院成都科学技术发展中心 柔性太阳能电池及其制备方法
JP6161860B2 (ja) * 2015-05-14 2017-07-12 株式会社昭和 対極に集電極を設けた色素増感型太陽電池

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020108649A1 (en) * 2000-12-07 2002-08-15 Seiko Epson Corporation Photoelectric conversion element
KR20040095320A (ko) * 2002-03-26 2004-11-12 가부시키가이샤후지쿠라 도전성 유리 및 이를 이용한 광전 변환소자
KR20100029414A (ko) * 2008-09-08 2010-03-17 엘지이노텍 주식회사 태양전지 및 이의 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61251589A (ja) * 1985-04-30 1986-11-08 三菱重工業株式会社 セラミツクス基材表面へのコ−テイング方法
JPS6289369A (ja) * 1985-10-16 1987-04-23 Matsushita Electric Ind Co Ltd 光起電力装置
JP4075021B2 (ja) * 1997-12-26 2008-04-16 ソニー株式会社 半導体基板の製造方法および薄膜半導体部材の製造方法
JP2000349266A (ja) * 1999-03-26 2000-12-15 Canon Inc 半導体部材の製造方法、半導体基体の利用方法、半導体部材の製造システム、半導体部材の生産管理方法及び堆積膜形成装置の利用方法
US7053294B2 (en) * 2001-07-13 2006-05-30 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate
CN101521249B (zh) * 2002-09-30 2012-05-23 米亚索尔公司 薄膜太阳能电池大规模生产的制造装置与方法
JP4695850B2 (ja) * 2004-04-28 2011-06-08 本田技研工業株式会社 カルコパイライト型太陽電池
US20100252110A1 (en) * 2007-09-28 2010-10-07 Fujifilm Corporation Solar cell

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020108649A1 (en) * 2000-12-07 2002-08-15 Seiko Epson Corporation Photoelectric conversion element
KR20040095320A (ko) * 2002-03-26 2004-11-12 가부시키가이샤후지쿠라 도전성 유리 및 이를 이용한 광전 변환소자
KR20100029414A (ko) * 2008-09-08 2010-03-17 엘지이노텍 주식회사 태양전지 및 이의 제조방법

Also Published As

Publication number Publication date
EP2503599A4 (en) 2017-09-27
CN103069575A (zh) 2013-04-24
JP2013538464A (ja) 2013-10-10
KR101091375B1 (ko) 2011-12-07
WO2012036504A2 (ko) 2012-03-22
CN103069575B (zh) 2015-09-16
EP2503599A2 (en) 2012-09-26
JP5913320B2 (ja) 2016-04-27
EP2503599B1 (en) 2020-11-04

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