WO2012024847A1 - Substrat poreux et son procédé de fabrication - Google Patents

Substrat poreux et son procédé de fabrication Download PDF

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Publication number
WO2012024847A1
WO2012024847A1 PCT/CN2010/076713 CN2010076713W WO2012024847A1 WO 2012024847 A1 WO2012024847 A1 WO 2012024847A1 CN 2010076713 W CN2010076713 W CN 2010076713W WO 2012024847 A1 WO2012024847 A1 WO 2012024847A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
porous structure
porous
holes
pores
Prior art date
Application number
PCT/CN2010/076713
Other languages
English (en)
Chinese (zh)
Inventor
夏洋
刘邦武
李超波
刘杰
汪明刚
李勇滔
Original Assignee
中国科学院微电子研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 中国科学院微电子研究所 filed Critical 中国科学院微电子研究所
Publication of WO2012024847A1 publication Critical patent/WO2012024847A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • Step 2022 the vacuuming system of the plasma source extracts the gas injected into the chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention porte sur un substrat poreux et sur son procédé de fabrication. La topographie de surface du substrat est désordonnée et poreuse. La profondeur des trous est inférieure à l'épaisseur du substrat ; les trous sont séparés les uns des autres et ne sont pas reliés entre eux. Le procédé met en œuvre : la disposition du substrat dans la chambre d'injection de l'équipement de préparation du substrat, le réglage du paramètre de traitement de l'équipement de préparation du substrat dans la plage de valeurs prédéfinie ; l'injection des ions réactifs du plasma généré par l'équipement de préparation du substrat dans le substrat, et la mise en réaction des ions réactifs avec le substrat afin de former le substrat poreux. Les fonds des trous dans le substrat poreux ne sont pas reliés entre eux. L'utilisation du substrat poreux pour réaliser des cellules solaires procure des avantages d'absorption de lumière, de transport de porteurs et de collecte. Le procédé de fabrication du substrat poreux permet un traitement simple, est facile à commander, et rend inutile la mise en oeuvre d'un nettoyage.
PCT/CN2010/076713 2010-08-23 2010-09-08 Substrat poreux et son procédé de fabrication WO2012024847A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN2010102600581A CN101964367A (zh) 2010-08-23 2010-08-23 一种多孔结构的衬底及其制备方法
CN201010260058.1 2010-08-23

Publications (1)

Publication Number Publication Date
WO2012024847A1 true WO2012024847A1 (fr) 2012-03-01

Family

ID=43517183

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2010/076713 WO2012024847A1 (fr) 2010-08-23 2010-09-08 Substrat poreux et son procédé de fabrication

Country Status (2)

Country Link
CN (1) CN101964367A (fr)
WO (1) WO2012024847A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105826332A (zh) * 2015-01-09 2016-08-03 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1193808A (zh) * 1997-03-17 1998-09-23 佳能株式会社 半导体衬底及其制造工艺以及在其上制作的电子器件
KR100677374B1 (ko) * 2005-11-14 2007-02-02 준 신 이 박판 실리콘 기판을 이용한 다공성 실리콘 태양전지 및 그제조방법
WO2009025502A2 (fr) * 2007-08-21 2009-02-26 Lg Electronics Inc. Cellule solaire ayant une structure poreuse et son procédé de fabrication
US20090071537A1 (en) * 2007-09-17 2009-03-19 Ozgur Yavuzcetin Index tuned antireflective coating using a nanostructured metamaterial
CN101734611A (zh) * 2009-12-16 2010-06-16 北京大学 基于无掩膜深反应离子刻蚀制备黑硅的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100338269C (zh) * 2005-10-10 2007-09-19 天津大学 制备一维取向的纳米二氧化钛管状晶薄膜的方法
CN100546049C (zh) * 2006-07-25 2009-09-30 天津大学 绝热性能的多孔硅基氧化钒薄膜及制备方法
CN101777615B (zh) * 2010-01-13 2013-07-31 南京大学 表面多孔的GaN基片的制备方法及由所述制备方法得到的GaN基片

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1193808A (zh) * 1997-03-17 1998-09-23 佳能株式会社 半导体衬底及其制造工艺以及在其上制作的电子器件
KR100677374B1 (ko) * 2005-11-14 2007-02-02 준 신 이 박판 실리콘 기판을 이용한 다공성 실리콘 태양전지 및 그제조방법
WO2009025502A2 (fr) * 2007-08-21 2009-02-26 Lg Electronics Inc. Cellule solaire ayant une structure poreuse et son procédé de fabrication
US20090071537A1 (en) * 2007-09-17 2009-03-19 Ozgur Yavuzcetin Index tuned antireflective coating using a nanostructured metamaterial
CN101734611A (zh) * 2009-12-16 2010-06-16 北京大学 基于无掩膜深反应离子刻蚀制备黑硅的方法

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Publication number Publication date
CN101964367A (zh) 2011-02-02

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