WO2012018230A3 - 다결정 구조의 투명반도체, 이의 제조방법 및 이를 포함하는 투명 트랜지스터 - Google Patents

다결정 구조의 투명반도체, 이의 제조방법 및 이를 포함하는 투명 트랜지스터 Download PDF

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Publication number
WO2012018230A3
WO2012018230A3 PCT/KR2011/005714 KR2011005714W WO2012018230A3 WO 2012018230 A3 WO2012018230 A3 WO 2012018230A3 KR 2011005714 W KR2011005714 W KR 2011005714W WO 2012018230 A3 WO2012018230 A3 WO 2012018230A3
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WO
WIPO (PCT)
Prior art keywords
transparent
manufacturing
polycrystalline structure
transistor including
including same
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PCT/KR2011/005714
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English (en)
French (fr)
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WO2012018230A2 (ko
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주홍렬
김상희
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주식회사 나노신소재
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Application filed by 주식회사 나노신소재 filed Critical 주식회사 나노신소재
Publication of WO2012018230A2 publication Critical patent/WO2012018230A2/ko
Publication of WO2012018230A3 publication Critical patent/WO2012018230A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Manufacturing & Machinery (AREA)
  • Conductive Materials (AREA)

Abstract

본 발명은 다결정 구조의 투명반도체, 이의 제조방법 및 이를 포함하는 투명 트랜지스터에 관한 것으로서, 본 발명에 따른 다결정 투명반도체는 In2O3, ZnO, Ga2O3 및 SnO2로 이루어진 군으로부터 선택되는 1종 또는 2종 이상의 혼합물인 모체 및 Al, B, Ce, Hf, F, Ga, Mo, N, Sc, Si, Ta, Ti, W, Zr, Y 및 Ge로 이루어진 군으로부터 선택되는 1종 이상의 불순물로 이루어지고 다결정 구조를 가지며 비저항이 0.1cm 내지 108cm인 것을 특징으로 한다.
PCT/KR2011/005714 2010-08-04 2011-08-04 다결정 구조의 투명반도체, 이의 제조방법 및 이를 포함하는 투명 트랜지스터 WO2012018230A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20100075297 2010-08-04
KR10-2010-0075297 2010-08-04

Publications (2)

Publication Number Publication Date
WO2012018230A2 WO2012018230A2 (ko) 2012-02-09
WO2012018230A3 true WO2012018230A3 (ko) 2012-05-10

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Application Number Title Priority Date Filing Date
PCT/KR2011/005714 WO2012018230A2 (ko) 2010-08-04 2011-08-04 다결정 구조의 투명반도체, 이의 제조방법 및 이를 포함하는 투명 트랜지스터

Country Status (2)

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KR (1) KR101322366B1 (ko)
WO (1) WO2012018230A2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10338706B2 (en) 2013-11-27 2019-07-02 Lg Chem, Ltd. Conductive structure body precursor, conductive structure body and method for manufacturing the same
KR102204137B1 (ko) * 2014-06-27 2021-01-19 엘지디스플레이 주식회사 표시장치 및 이를 제조하는 방법
DE102016002021B3 (de) 2016-02-20 2017-07-20 Audi Ag Kraftfahrzeug-Bedienvorrichtung mit federnd gelagertem Betätigungselement und Bedienhaptik

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007250982A (ja) * 2006-03-17 2007-09-27 Canon Inc 酸化物半導体を用いた薄膜トランジスタ及び表示装置
KR20070101595A (ko) * 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
KR20080072136A (ko) * 2007-02-01 2008-08-06 한양대학교 산학협력단 투명 전도성 박막 및 이의 제조방법
KR20100070937A (ko) * 2008-12-18 2010-06-28 한국전자통신연구원 보론이 도핑된 산화물 반도체 박막을 적용한 박막 트랜지스터 및 그의 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100010888A (ko) * 2008-07-23 2010-02-02 한국전자통신연구원 Ｚｔｏ 박막의 제조방법, 이를 적용한 박막 트랜지스터 및 박막 트랜지스터의 제조방법
JP2010040552A (ja) 2008-07-31 2010-02-18 Idemitsu Kosan Co Ltd 薄膜トランジスタ及びその製造方法
KR100999501B1 (ko) * 2008-09-04 2010-12-09 한국전자통신연구원 금속이 도핑된 투명 전도성 산화물 박막의 제조방법 및 이를 적용한 박막 트랜지스터
KR101552975B1 (ko) * 2009-01-09 2015-09-15 삼성전자주식회사 산화물 반도체 및 이를 포함하는 박막 트랜지스터

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007250982A (ja) * 2006-03-17 2007-09-27 Canon Inc 酸化物半導体を用いた薄膜トランジスタ及び表示装置
KR20070101595A (ko) * 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
KR20080072136A (ko) * 2007-02-01 2008-08-06 한양대학교 산학협력단 투명 전도성 박막 및 이의 제조방법
KR20100070937A (ko) * 2008-12-18 2010-06-28 한국전자통신연구원 보론이 도핑된 산화물 반도체 박막을 적용한 박막 트랜지스터 및 그의 제조방법

Also Published As

Publication number Publication date
KR20120013202A (ko) 2012-02-14
WO2012018230A2 (ko) 2012-02-09
KR101322366B1 (ko) 2013-10-28

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