WO2012015267A3 - Procédé de préparation de graphène, feuille de graphène, et dispositif l'utilisant - Google Patents
Procédé de préparation de graphène, feuille de graphène, et dispositif l'utilisant Download PDFInfo
- Publication number
- WO2012015267A3 WO2012015267A3 PCT/KR2011/005600 KR2011005600W WO2012015267A3 WO 2012015267 A3 WO2012015267 A3 WO 2012015267A3 KR 2011005600 W KR2011005600 W KR 2011005600W WO 2012015267 A3 WO2012015267 A3 WO 2012015267A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- graphene
- same
- preparing
- sheet
- graphene sheet
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title abstract 6
- 229910021389 graphene Inorganic materials 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/02—Single layer graphene
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/04—Specific amount of layers or specific thickness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Abstract
La présente invention concerne un procédé de préparation de graphène par fourniture d'un gaz de réaction, comprenant une source de carbone, et de chaleur sur un substrat, et mise en réaction de celui-ci pour former un graphène sur le substrat. L'invention concerne également une feuille de graphène formée par le procédé, et un dispositif l'utilisant.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/813,228 US20130130011A1 (en) | 2010-07-30 | 2011-07-29 | Method for preparing graphene, graphene sheet, and device using same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100074323A KR20120012271A (ko) | 2010-07-30 | 2010-07-30 | 그래핀의 제조 방법, 그래핀 시트 및 이를 이용한 소자 |
KR10-2010-0074323 | 2011-07-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012015267A2 WO2012015267A2 (fr) | 2012-02-02 |
WO2012015267A3 true WO2012015267A3 (fr) | 2012-05-18 |
Family
ID=45530626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2011/005600 WO2012015267A2 (fr) | 2010-07-30 | 2011-07-29 | Procédé de préparation de graphène, feuille de graphène, et dispositif l'utilisant |
Country Status (3)
Country | Link |
---|---|
US (1) | US20130130011A1 (fr) |
KR (1) | KR20120012271A (fr) |
WO (1) | WO2012015267A2 (fr) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
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US9150418B2 (en) * | 2012-02-24 | 2015-10-06 | California Institute Of Technology | Method and system for graphene formation |
KR101381008B1 (ko) * | 2012-07-04 | 2014-04-04 | 세종대학교산학협력단 | 그래핀의 제조방법 |
KR101850112B1 (ko) | 2012-12-26 | 2018-04-19 | 한화테크윈 주식회사 | 그래핀, 그래핀 제조용 조성물 및 이를 이용한 그래핀의 제조 방법 |
KR20140096863A (ko) | 2013-01-29 | 2014-08-06 | 삼성디스플레이 주식회사 | 그래핀 패턴 형성 방법 |
CN103121670B (zh) * | 2013-02-19 | 2015-04-29 | 西安交通大学 | 远程等离子体增强原子层沉积低温生长石墨烯的方法 |
KR101311905B1 (ko) * | 2013-05-03 | 2013-09-25 | (주)메카스 | 태양광 발전용 모듈의 백시트에 방열 코팅막을 형성하는 방법 |
KR101482655B1 (ko) | 2013-07-10 | 2015-01-16 | 한국과학기술원 | 탄소기반 자기조립층의 열처리를 통한 고품질 그래핀의 제조 방법 |
KR101842033B1 (ko) * | 2014-01-06 | 2018-03-26 | 한화테크윈 주식회사 | 그래핀 제조용 조성물 및 이를 이용한 그래핀의 제조 방법 |
US9505624B2 (en) | 2014-02-18 | 2016-11-29 | Corning Incorporated | Metal-free CVD coating of graphene on glass and other dielectric substrates |
CN105374677B (zh) * | 2014-08-25 | 2018-05-22 | 东莞市中镓半导体科技有限公司 | 一种在大尺寸Si衬底上制备高电子迁移率场效应晶体管的方法 |
US9859115B2 (en) | 2015-02-13 | 2018-01-02 | National Taiwan University | Semiconductor devices comprising 2D-materials and methods of manufacture thereof |
CN104726845B (zh) * | 2015-03-05 | 2018-05-01 | 中国科学院上海微系统与信息技术研究所 | h-BN上石墨烯纳米带的制备方法 |
TWI539043B (zh) | 2015-07-21 | 2016-06-21 | 財團法人工業技術研究院 | 石墨烯花的形成方法 |
CN104949779B (zh) * | 2015-07-21 | 2017-09-08 | 中国科学技术大学 | 一种压力传感器及其制备方法 |
CN105063796B (zh) * | 2015-07-21 | 2017-03-08 | 中国科学院宁波材料技术与工程研究所 | 一种高分子复合导电纤维及其制备方法 |
CN105002595B (zh) * | 2015-07-21 | 2017-02-01 | 中国科学院宁波材料技术与工程研究所 | 一种含部分还原石墨烯的高分子复合功能纤维及其制备方法 |
JP6592766B2 (ja) * | 2015-07-31 | 2019-10-23 | 川研ファインケミカル株式会社 | グラフェン被覆窒化アルミニウムフィラー、その製造方法、電子材料、樹脂複合体、及び疎水化処理方法 |
JP6960813B2 (ja) * | 2017-09-20 | 2021-11-05 | 東京エレクトロン株式会社 | グラフェン構造体の形成方法および形成装置 |
US11180373B2 (en) | 2017-11-29 | 2021-11-23 | Samsung Electronics Co., Ltd. | Nanocrystalline graphene and method of forming nanocrystalline graphene |
KR102592698B1 (ko) * | 2017-11-29 | 2023-10-24 | 삼성전자주식회사 | 나노결정질 그래핀 및 나노결정질 그래핀의 형성방법 |
KR102532605B1 (ko) | 2018-07-24 | 2023-05-15 | 삼성전자주식회사 | 나노결정질 그래핀 캡층을 포함하는 인터커넥트 구조체 및 이 인터커넥트 구조체를 포함하는 전자 소자 |
US11217531B2 (en) | 2018-07-24 | 2022-01-04 | Samsung Electronics Co., Ltd. | Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure |
KR20200011821A (ko) | 2018-07-25 | 2020-02-04 | 삼성전자주식회사 | 탄소물 직접 성장방법 |
KR102601607B1 (ko) | 2018-10-01 | 2023-11-13 | 삼성전자주식회사 | 그래핀의 형성방법 |
CN111733456B (zh) * | 2019-03-25 | 2021-06-15 | 中国科学院物理研究所 | 用于AlN单晶生长的复合籽晶及其制备方法 |
KR20200126721A (ko) | 2019-04-30 | 2020-11-09 | 삼성전자주식회사 | 그래핀 구조체 및 그래핀 구조체의 형성방법 |
JP7172962B2 (ja) * | 2019-11-12 | 2022-11-16 | 株式会社豊田中央研究所 | 導電性炭素膜の成膜方法 |
CN115010494B (zh) * | 2022-06-01 | 2023-01-24 | 星途(常州)碳材料有限责任公司 | 一种强化纵向热通量传输的石墨烯导热片制备方法 |
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KR20090026568A (ko) * | 2007-09-10 | 2009-03-13 | 삼성전자주식회사 | 그라펜 시트 및 그의 제조방법 |
KR20090029621A (ko) * | 2007-09-18 | 2009-03-23 | 삼성전자주식회사 | 그라펜 패턴 및 그의 형성방법 |
KR20090043418A (ko) * | 2007-10-29 | 2009-05-06 | 삼성전자주식회사 | 그라펜 시트 및 그의 제조방법 |
KR20090065206A (ko) * | 2007-12-17 | 2009-06-22 | 삼성전자주식회사 | 단결정 그라펜 시트 및 그의 제조방법 |
KR20100055098A (ko) * | 2008-11-17 | 2010-05-26 | 천승현 | 대면적 그래핀 층을 포함하는 전자 장치 및 이의 제조방법 |
-
2010
- 2010-07-30 KR KR1020100074323A patent/KR20120012271A/ko active Search and Examination
-
2011
- 2011-07-29 WO PCT/KR2011/005600 patent/WO2012015267A2/fr active Application Filing
- 2011-07-29 US US13/813,228 patent/US20130130011A1/en not_active Abandoned
Patent Citations (5)
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KR20090026568A (ko) * | 2007-09-10 | 2009-03-13 | 삼성전자주식회사 | 그라펜 시트 및 그의 제조방법 |
KR20090029621A (ko) * | 2007-09-18 | 2009-03-23 | 삼성전자주식회사 | 그라펜 패턴 및 그의 형성방법 |
KR20090043418A (ko) * | 2007-10-29 | 2009-05-06 | 삼성전자주식회사 | 그라펜 시트 및 그의 제조방법 |
KR20090065206A (ko) * | 2007-12-17 | 2009-06-22 | 삼성전자주식회사 | 단결정 그라펜 시트 및 그의 제조방법 |
KR20100055098A (ko) * | 2008-11-17 | 2010-05-26 | 천승현 | 대면적 그래핀 층을 포함하는 전자 장치 및 이의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
WO2012015267A2 (fr) | 2012-02-02 |
US20130130011A1 (en) | 2013-05-23 |
KR20120012271A (ko) | 2012-02-09 |
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