WO2011162199A1 - Procédé et appareil pour contrôler un courant électrique - Google Patents

Procédé et appareil pour contrôler un courant électrique Download PDF

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WO2011162199A1
WO2011162199A1 PCT/JP2011/064031 JP2011064031W WO2011162199A1 WO 2011162199 A1 WO2011162199 A1 WO 2011162199A1 JP 2011064031 W JP2011064031 W JP 2011064031W WO 2011162199 A1 WO2011162199 A1 WO 2011162199A1
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electrode
magnetic field
microwave
current control
semiconductor layer
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PCT/JP2011/064031
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English (en)
Japanese (ja)
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勝一 鐘本
秀展 松岡
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公立大学法人大阪市立大学
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Publication of WO2011162199A1 publication Critical patent/WO2011162199A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/60—Arrangements or instruments for measuring magnetic variables involving magnetic resonance using electron paramagnetic resonance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N24/00—Investigating or analyzing materials by the use of nuclear magnetic resonance, electron paramagnetic resonance or other spin effects
    • G01N24/10—Investigating or analyzing materials by the use of nuclear magnetic resonance, electron paramagnetic resonance or other spin effects by using electron paramagnetic resonance

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  • the present invention relates to a current control method and a current control device.
  • a magnetoresistive element can use a magnetic field to control the amount of current flowing through the element between certain thresholds to distinguish between two states (typically represented as 0 and 1), for example, It is applied to quantum information processing.
  • the magnetoresistive element is used not only for the magnetic sensor and the magnetic head described in Patent Document 1 below, but also for the development of a magnetoresistive memory (Magnetic Resistive Random Access Memory: MRAM).
  • the characteristics of a magnetoresistive element are expressed by an equation ( ⁇ (0) ⁇ (H)) expressed by using an electric resistivity ⁇ (0) at zero magnetic field and a saturated electric resistivity ⁇ (H) by applying a magnetic field. ) / ⁇ (H). Since the discovery of the Fe / Cr artificial lattice, giant magnetoresistive effects using various metal artificial lattices in which ferromagnetic metals such as Co / Cu, Co / Ag, and Ni / Ag are combined with non-ferromagnetic metals have been discovered.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a novel current control method and current control apparatus applicable to various applications.
  • the current control method includes a step of preparing an element device having a first electrode, a second electrode, and an organic semiconductor layer positioned between the first electrode and the second electrode, and a magnetic field and a microwave.
  • the first electrode and the second electrode are changed by changing at least one of the magnetic field, the microwave and the light applied to the organic semiconductor layer. And controlling the current flowing between them.
  • the changing step at least one of the magnetic field and the microwave is changed.
  • the presence or absence of electron spin resonance in the organic semiconductor layer is changed in the changing step.
  • the element device in the preparing step, has an insulating layer provided between at least one of the first electrode and the second electrode and the organic semiconductor layer.
  • the changing step at least one of the intensity of the magnetic field and the intensity of the microwave is changed.
  • the formation and non-formation of the magnetic field are switched.
  • the microwave irradiation and non-irradiation are switched in the changing step.
  • the organic semiconductor layer has a ⁇ -type conjugated polymer.
  • the current control apparatus includes an element device having a first electrode, a second electrode, and an organic semiconductor layer positioned between the first electrode and the second electrode, and a space in which the element device is disposed.
  • the current flowing between the first electrode and the second electrode is controlled by changing at least one of the light applied to the microwave and the organic semiconductor layer.
  • At least one of the magnetic field forming unit and the microwave irradiation unit changes at least one of the magnetic field and the microwave.
  • At least one of the magnetic field forming unit and the microwave irradiation unit changes presence or absence of an electron spin resonance phenomenon in the organic semiconductor layer.
  • the element device has an insulating layer provided between at least one of the first electrode and the second electrode and the organic semiconductor layer.
  • At least one of the magnetic field forming unit and the microwave irradiation unit changes at least one of the intensity of the magnetic field and the intensity of the microwave.
  • the magnetic field forming unit switches between formation and non-formation of the magnetic field.
  • the microwave irradiation unit switches between irradiation and non-irradiation of the microwave.
  • the organic semiconductor layer has a ⁇ -type conjugated polymer.
  • novel current control applicable to various uses can be performed.
  • FIG. 1 shows a schematic diagram of a current control device 10 of the present embodiment.
  • the current control apparatus 10 includes an element device 20, a magnetic field forming unit 30, and a microwave irradiation unit 40.
  • the element device 20 is disposed at a place where light is irradiated. For example, the element device 20 is irradiated with sunlight.
  • the magnetic field forming unit 30 forms a magnetic field in the space where the element device 20 is arranged.
  • the microwave irradiation unit 40 irradiates the element device 20 with microwaves.
  • the magnetic field forming unit 30 forms a magnetic field with a predetermined intensity on the element device 20 and the microwave irradiating unit 40 irradiates the microwave having a predetermined frequency with the element device 20.
  • An electron spin resonance phenomenon occurs in the device 20.
  • FIG. 2 shows an example of the element device 20 in the current control apparatus 10.
  • the element device 20 includes an electrode 22, an electrode 24, and an organic semiconductor layer 26 positioned between the electrode 22 and the electrode 24.
  • the electrode 22 may be supported by the substrate S.
  • the electrode 22 and the electrode 24 may be referred to as a first electrode 22 and a second electrode 24, respectively.
  • the organic semiconductor layer 26 When the organic semiconductor layer 26 is irradiated with light, carriers are generated as the organic semiconductor layer 26 absorbs light. For example, carriers are generated when the organic semiconductor layer 26 absorbs visible light and ultraviolet light.
  • a stacked organic solar cell may be used as the element device 20.
  • a solar cell having an organic thin film semiconductor in which a fullerene derivative as an electron acceptor and a ⁇ -type conjugated polymer as an electron donor are combined may be used as the element device 20.
  • an electromagnet is used as the magnetic field forming unit 30.
  • any magnetic field forming unit 30 may be used as long as a magnetic field can be applied.
  • a microwave resonator is used as the microwave irradiation unit 40.
  • the microwave resonance circuit 40 is a cavity resonator surrounded by a wall surface of a conductor such as metal, and is configured so that only an electromagnetic wave having a predetermined frequency satisfying the resonance condition can exist.
  • the element device 20 is disposed between the electromagnets 30 and at the center of the microwave resonator 40.
  • the magnetic field forming unit 30 and the microwave irradiating unit 40 are integrally configured, and the organic semiconductor layer 26 is operated under resonance conditions determined from the intensity of the magnetic field and the frequency of the microwave. Causes an electron spin resonance phenomenon.
  • the magnetic field forming unit 30 and the microwave irradiation unit 40 may be collectively referred to as an electron spin resonance apparatus 100.
  • a commercially available apparatus may be used as the electron spin resonance apparatus 100.
  • the current control method of this embodiment will be described with reference to FIGS. 1 and 2.
  • the element device 20 having the first electrode 22, the second electrode 24, and the organic semiconductor layer 26 is prepared.
  • the first electrode 22 is changed by changing at least one of the magnetic field, the microwave, and the light applied to the organic semiconductor layer 26.
  • the current flowing between the second electrode 24 and the second electrode 24 is controlled.
  • the current control device 10 of the present embodiment controls the current flowing between the electrode 22 and the electrode 24 in association with the electron spin resonance phenomenon caused by the magnetic field and the microwave.
  • unpaired electrons in the organic semiconductor layer 26 When unpaired electrons in the organic semiconductor layer 26 are placed under the influence of a magnetic field having a predetermined strength, they absorb microwaves having a predetermined frequency and transition to a higher energy level. Such a phenomenon is called an electron spin resonance phenomenon.
  • a strong magnetic field is applied from the magnetic forming unit 30 to the organic semiconductor layer 26 in which a large number of unpaired electrons exist, the spin of the unpaired electrons changes in the direction of the magnetic field. Strictly speaking, some of the spins are parallel to the magnetic field, while some of the spins are antiparallel to the magnetic field. There are many.
  • the energy difference between the former and latter spins changes according to the strength of the magnetic field. In this state, when a microwave having energy necessary for changing the direction from the former to the latter spin is irradiated, electron spin resonance occurs
  • the microwave when at least one of the magnetic field and the microwave changes from a predetermined state set so as to cause the electron spin phenomenon of the organic semiconductor layer 26 to a state set so as not to cause the electron spin phenomenon, current control is performed.
  • a relatively large current flows between the electrode 22 and the electrode 24.
  • the strength of the magnetic field may be changed from a predetermined value.
  • the strength of the magnetic field may be changed from a predetermined value to zero so that the magnetic field is not formed.
  • the frequency of the microwave may be changed from a predetermined value, or the microwave may be non-irradiated and the intensity of the microwave may be zero.
  • the electron spin in the organic semiconductor layer 26 at a certain rate even if the intensity of the magnetic field formed by the magnetic field forming unit 30 and the frequency of the microwave irradiated by the microwave irradiation unit 40 are changed to some extent, the electron spin in the organic semiconductor layer 26 at a certain rate. A phenomenon may occur. For this reason, it is preferable to change the intensity of the magnetic field formed by the magnetic field forming unit 30 and the frequency of the microwave irradiated by the microwave irradiation unit 40 to such an extent that the electron spin phenomenon does not occur. For example, when the intensity of the magnetic field in which the electron spin phenomenon occurs is about 3370 G, the electron spin phenomenon occurs by changing the intensity of the magnetic field by about 10 G (specifically, by making it less than 3360 G or 3380 G or more). Disappear.
  • the microwave when at least one of the magnetic field and the microwave changes from a state set so as not to cause the electron spin phenomenon of the organic semiconductor layer 26 to a predetermined state set so as to cause the electron spin phenomenon.
  • a relatively large current flows between the electrode 22 and the electrode 24.
  • the intensity of the magnetic field may be changed to a predetermined intensity that causes an electron spin phenomenon.
  • the magnetic field may be formed from a non-formation to a predetermined intensity.
  • the frequency of the microwave may be changed to a predetermined frequency that causes an electron spin phenomenon, or the microwave may be changed so as to be irradiated at a predetermined frequency from non-irradiation.
  • the intensity or wavelength of the light applied to the organic semiconductor layer 26 may be changed in a state where the magnetic field and the microwave are set so as to cause the electron spin phenomenon. Thereby, the current flowing between the electrode 22 and the electrode 24 can be controlled.
  • the current control device 10 changes at least one of the light applied to the magnetic field, the microwave, and the organic semiconductor layer 26 in association with the electron spin resonance phenomenon caused by the magnetic field and the microwave.
  • the current flowing between the first electrode 22 and the second electrode 24 can be controlled. For example, when changing at least one of the strength of the magnetic field and the strength and frequency of the microwave, a relatively large current can flow between the electrode 22 and the electrode 24 for each change. Therefore, an alternating current can be generated using electron spin resonance conditions determined from the frequency of the microwave and the magnetic field strength.
  • the strength of the static magnetic field from the magnetic forming unit 30 is indicated as H0
  • the strength of the electromagnetic field from the microwave irradiation unit 40 is indicated as H1.
  • the microwave from the microwave irradiation unit 40 is satisfied when the resonance condition determined from the value H0 of the static magnetic field and the frequency of the microwave is satisfied.
  • the intensity and / or frequency of the magnetic field or the intensity (H0) of the magnetic field from the magnetic forming unit 30 is modulated, an alternating current having the modulation frequency can be generated.
  • the intensity of the microwave may change in a pulse shape having a certain width, or may change in a sine wave shape.
  • the frequency of the alternating current generated is determined by the frequency of the intensity modulation of the microwave or magnetic field. Since the magnetic field intensity giving the resonance condition and the microwave frequency are in a proportional relationship, the magnetic field intensity and the microwave frequency can be changed to arbitrary values as long as the resonance condition is satisfied.
  • the current flowing between the electrodes 22 and 24 can be controlled by the microwave irradiation unit 40 switching between a state in which the microwave irradiation is performed and a state in which the microwave irradiation is not performed (ON-OFF state). For example, it is possible to switch between a state where an electron spin resonance phenomenon occurs and a state where it does not occur by AM modulation of microwaves, and a current due to the electron spin resonance phenomenon can be generated depending on the switching timing. In this case, a negative spike current immediately after the occurrence of the electron spin resonance phenomenon (that is, immediately after the microwave irradiation is turned on) immediately after the electron spin resonance phenomenon is stopped (that is, immediately after the microwave irradiation is turned off). A spike-like current in the positive direction flows.
  • the current flowing between the electrodes 22 and 24 due to the electron spin resonance phenomenon can be controlled by switching the state where the magnetic field is not formed (ON-OFF state). In this way, a current can be generated between the electrodes by switching the ON-OFF state of the electron spin resonance phenomenon.
  • a polaron pair may be involved as a reason for the generation of current by electron spin resonance.
  • a polaron pair is a state in which electrons and holes are weakly bonded between polymer chains, and is an intermediate between excitons and carriers.
  • PP S singlet
  • PP T triplet
  • an equilibrium state is established in dissociation and recombination between carriers, polaron pairs, and excitons.
  • the microwave can be used as a control factor (switch) under the condition that the strength of the magnetic field is constant.
  • the value of ( ⁇ (0) ⁇ (H)) / ⁇ (H) indicating one characteristic of the magnetoresistive element is set to 100 at room temperature. %, It can be suitably used for applications requiring a large current difference.
  • the current control device 10 it is possible to control the current using not only the magnetic field but also the microwave. Therefore, compared with the case where the current is controlled using only the magnetic field, the current control device 10 has a wider range. Application can be made.
  • the generated current is generated according to light, and the generated current can be controlled according to the amount of light and the wavelength of light.
  • the element device 20 (more specifically, the organic semiconductor layer 26) is irradiated with light from the outside of the current control device 10 such as sunlight. It is not limited.
  • the element device 20 (organic semiconductor layer 26) may be irradiated with light emitted from a member in the current control device 10.
  • FIG. 3 shows a schematic diagram of the current control device 10 of the present embodiment.
  • the current control device 10 shown in FIG. 3 has the same configuration as that of the current control device described above with reference to FIG. 1 except that the light source 50 is further provided, and redundant description is given to avoid redundancy. Omitted.
  • a semiconductor laser may be used as the light source 50.
  • the current can be controlled by controlling the light source 50.
  • a current may flow between the electrode 22 and the electrode 24 by irradiating the organic semiconductor layer 26 with light.
  • a current may flow between the electrode 22 and the electrode 24 by light irradiation.
  • the electrode 22 is a positive electrode and the electrode 24 is a negative electrode.
  • the organic semiconductor layer 26 includes a buffer layer 26a, an electron donor layer 26b, and an electron acceptor layer 26c.
  • the buffer layer 26a is located between the transparent electrode 22 and the electron donor layer 26b, and improves the charge (hole) injection efficiency into the electron donor layer 26b.
  • the electron donor layer 26b delivers electrons excited by light.
  • the electron acceptor layer 26 c receives the electrons and transfers them to the electrode 24.
  • the electron donor layer 26b and the electron acceptor layer 26c are collectively referred to as a photoelectric conversion layer 26o.
  • the electrode 22 is a transparent electrode, and the electrode 22 is supported by the substrate S.
  • a metal electrode may be used as the electrode 24.
  • Exciton (exciton) generated by photoexcitation is charge separated at the pn junction at the interface between the electron donor layer 26b and the electron acceptor layer 26c, and electrons are transferred to the electron acceptor layer 26c and holes are transferred to the electron donor layer. Move to 26b. Thereafter, holes can move in the electron donor layer 26b and electrons can move in the electron acceptor layer 26c, and current can be taken out.
  • the substrate S may be transparent or opaque.
  • a transparent substrate is preferably used as the substrate S when the substrate S side is a light receiving surface.
  • a glass substrate such as quartz glass is used as the transparent substrate S.
  • a transparent rigid material such as a synthetic quartz plate or a flexible flexible material such as a transparent resin film or an optical resin plate is used as the transparent substrate S. May be.
  • the transparent electrode 22 may be made of ITO in which tin is added to indium oxide.
  • the material of the transparent electrode 22 is not particularly limited to ITO, but as will be described later, the transparent electrode 22 is preferably formed of a material having a high work function in consideration of the work function of the electrode 24 and the like.
  • the electrode 24 is not particularly limited as long as it is a conductive material. However, when the transparent electrode 22 is formed from ITO having a relatively high work function, it is preferable to use aluminum having a low work function as the electrode 24.
  • the buffer layer 26a is made of 3,4-polyethylenedioxythiophene: polystyrene sulfonate (poly (3,4-ethylenedithiothiophene): poly (styrenesulfonate), hereinafter referred to as PEDOT / PSS).
  • PEDOT / PSS exhibits extremely high conductivity and is preferably used as a material for the buffer layer 26a.
  • the buffer layer 26a may be made of starburst amine or CuPc (copper phthalocyanine). Note that the buffer layer 26a may be omitted as necessary.
  • the electron donor layer 26b is preferably composed of a ⁇ -conjugated polymer having conjugated ⁇ electrons along the polymer main chain.
  • the electron donor layer 26b is made of poly (2-methoxy-5-ethylhexyoxy-1,4-phenylenevinylene, hereinafter referred to as MEH-PPV).
  • the electron donor layer 26b is formed of poly (3-hexylthiopene) (abbreviation, P3HT) or poly (2-methoxy-5- (3 ′, 7′-dimethylity) -1,1,4-phenylenevinylene) (abbreviation, It may be composed of other ⁇ -conjugated polymers such as MDMOPPV).
  • the electron acceptor layer 26c is made of fullerene (C 60 ) or a fullerene derivative.
  • Fullerene (C 60 ) or fullerene derivatives may exhibit high energy conversion efficiency.
  • fullerene derivatives refer to fullerenes, fullerene derivatives, and mixtures of fullerenes and fullerene derivatives.
  • the fullerene derivative is not particularly limited as long as it is a compound having a fullerene skeleton.
  • any carbon atom in the fullerene skeleton may be surface-modified with an arbitrary group, and the surface-modifying groups may be bonded to each other to form a ring.
  • the fullerene skeleton units contained in one molecule may be the same or different including the surface modifying group.
  • fullerene derivatives include higher-order fullerenes, surface-modified fullerenes having a surface-modifying group, bucky onions, and fullerene-bonded polymers.
  • Higher order fullerenes include, for example, C 60 , C 70 , C 76 , C 78 , C 84 and the like.
  • higher-order fullerenes include not only higher-order fullerenes but also derivatives of higher-order fullerenes.
  • the electron acceptor layer 26c is composed of (6,6) -phenyl-C61-butyric acid methyl ester ((6,6) -phenyl-C61-butylic acid methyl ester (hereinafter referred to as PCBM)) as a fullerene derivative. Is done. Fullerene itself has a low solubility in an organic solvent, and thus is formed by a vacuum deposition method. On the other hand, PCBM can form a solution in an organic solvent into a thin film by spin coating or the like.
  • excitons (excitons) generated by photoexcitation are separated by charge at the pn junction at the interface between the fullerene or fullerene derivative (electron acceptor layer 26c) and the ⁇ -conjugated polymer (electron donor layer 26b). Move to the electron acceptor layer 26c and holes move to the electron donor layer 26b. Thereafter, holes move through the network of ⁇ -conjugated polymer (electron donor layer 26b) and electrons move through the network of fullerene (electron acceptor layer 26c), and are taken out as current.
  • an electrode 22 containing ITO is formed on the surface of the glass substrate S. Thereafter, a buffer layer 26 a, an electron donor layer 26 b, and an electron acceptor layer 26 c are formed on the electrode 22.
  • the buffer layer 26a is made of PEDOT / PSS
  • the electron donor layer 26b is made of MEH-PPV
  • the electron acceptor layer 26c is made of PCBM.
  • the buffer layer 26a, the electron donor layer 26b, and the electron acceptor layer 26c are formed in this order by the spin coat method.
  • a method for applying these materials for example, a die coating method, a dip coating method, a roll coating method, a bead coating method, a spray coating method, a bar coating method, a gravure coating method, or the like can be used.
  • the electron acceptor layer 26c may be made of fullerene. In this case, the electron acceptor layer 26c is formed by vacuum deposition.
  • the electrode 24 is formed using, for example, vacuum deposition.
  • the electrode 24 is formed from aluminum.
  • a method for forming the electrode 24 in addition to the vacuum deposition method, for example, a PVD method such as a sputtering method or an ion plating method, or a dry coating method such as a CVD method can be employed.
  • FIG. 6 is a graph showing the time change of the current obtained by the current control device 10.
  • the horizontal axis indicates time
  • the vertical axis indicates the photocurrent generated in the element device 20.
  • the wavelength of the light applied to the element device 20 is 488 nm
  • the intensity of the light is 25 mW
  • the intensity of the applied magnetic field is 3380G.
  • the frequency of the microwave is about 9.5 GHz.
  • the intensity of the microwave is 50 Hz (period 20 ms), and the intensity is modulated at 0 mW and 200 mW.
  • the intensity of the microwave is modulated at a frequency of 50 Hz (period 20 ms), but when this is modulated at about 1 kHz or more, the spike-like current approaches the alternating current waveform of the sine wave.
  • the intensity of light is about 25 mW, but when the irradiation intensity is increased, the alternating photocurrent further increases.
  • the present invention is not limited to this. Even if the element device 20 (organic semiconductor layer 26) is irradiated with light, no current may flow between the electrode 22 and the electrode 24.
  • FIG. 7 shows the structure of the element device 20.
  • the element device 20 shown in FIG. 7 includes, in addition to the electrodes 22 and 24 and the organic semiconductor layer 26, an insulating layer 23 positioned between the electrode 22 and the organic semiconductor layer 26, and the electrode 24 and the organic semiconductor layer 26. It further has an insulating layer 25 positioned therebetween.
  • the insulating layers 23 and 25 are made of an insulating resin.
  • the insulating resin for example, cycloolefin polymer resin manufactured by Nippon Zeon Co., Ltd. is used.
  • the insulating layers 23 and 25 suppress the current flowing between the electrode 22 and the electrode 24. For example, in the element device 20 shown in FIG. 7, since the insulating layers 23 and 25 are formed, no steady photocurrent is generated.
  • the organic semiconductor layer 26 may include a ⁇ -type conjugated polymer.
  • poly (2-methoxy-5-ethylhexyloxy-1,4-phenylenevinylene, hereinafter referred to as MEH-PPV) is used as the ⁇ -type conjugated polymer of the organic semiconductor layer 26.
  • MEH-PPV poly (2-methoxy-5-ethylhexyloxy-1,4-phenylenevinylene
  • P3HT poly (3-hexylopenene)
  • MDMOPPV poly (2-methoxy-5- (3 ′, 7′-dimethyloxy)-1,4-phenylenevinylene
  • C 60 fullerene or the like may be used.
  • the organic semiconductor layer 26 includes a ⁇ -type conjugated polymer
  • a ⁇ -type conjugated polymer for example, an organic thin film semiconductor that combines a fullerene derivative as an electron acceptor and a ⁇ -type conjugated polymer as an electron donor may be used.
  • P3HT absorbs light having a wavelength of 650 ⁇ m or less
  • MDMOPPV absorbs light having a wavelength of 600 nm or less.
  • C 60 fullerene absorbs light in the visible region and the ultraviolet region.
  • the insulating layer 23 is provided between the transparent electrode 22 and the organic semiconductor layer 26, and the insulating layer 25 is provided between the organic semiconductor layer 26 and the metal electrode 24.
  • the insulating layers 23 and 25 can generate a spike-like alternating current due to a change in the presence or absence of electron spin resonance while no steady photocurrent is generated in the element device 20.
  • the reason why the spike current is generated although the insulating layers 23 and 25 are provided will be described.
  • a device having a structure in which an organic semiconductor layer is sandwiched between different electrodes is short-circuited, an internal electric field is generated in the organic semiconductor layer, and the direction in which the photocurrent flows is uniquely determined by the direction of the electric field. Therefore, the phenomenon in which the direction of the photocurrent is reversed by the observed electron spin resonance cannot occur due to a change in the number of carriers. It is considered that the current change caused by electron spin resonance is caused by a displacement current induced by a change in the electric field environment (ie, dielectric constant) in the device.
  • the two insulating layers 23 and 25 are provided on both sides of the organic semiconductor layer 26, but the present invention is not limited to this. Of the insulating layers 23 and 25, only the insulating layer 23 may be provided, or only the insulating layer 25 may be provided. Thus, the element device 20 may be provided with at least one of the insulating layers 23 and 25.
  • FIG. 8 shows a time change spectrum in the vicinity of the peak (that is, the resonance point) of the photocurrent detection ESR signal measured with an oscilloscope.
  • the ON / OFF state of the electron spin resonance phenomenon is realized by microwave AM modulation.
  • the photocurrent detection ESR an element device set in an X-band microwave cavity is photoexcited with a semiconductor laser having a wavelength of 473 nm, and the photocurrent I is measured at room temperature in a nitrogen atmosphere.
  • the steady photocurrent is suppressed by providing the insulating layer 23 and / or the insulating layer 25.
  • the element device 20 is exposed to the atmosphere for a long time without providing the insulating layers 23 and 25.
  • the steady photocurrent can be suppressed.
  • the spike current can also be increased.
  • the current control device 10 can be used as a memory in combination with a magnetic material, similarly to MARM.
  • MRAM when there is information, the magnetic material is magnetized by applying a magnetic field to store the information.
  • the current value (resistance) under magnetization is distinguished from the current value in the absence of a magnetic field to distinguish between the two states.
  • the current control device 10 since the current can be controlled based on the change of the magnetic field, information can be read through the current. Also, control by microwaves can be performed.
  • the current control device 10 may be used as a photovoltaic element that can be remotely controlled by microwaves.
  • the current control device 10 can control the current using a microwave or a magnetic field as a switch.
  • the current control device 10 can be used as a switch element by bringing a magnetic body or the like close to the element device 20 in a state where the magnetic field from the magnetic field forming unit 30 is applied.
  • the current control device 10 is used for electronic information processing such as a computer or remote monitoring or communication equipment.
  • novel current control applicable to various uses can be performed.
  • the current control device of the present invention is suitably used for manufacturing a switch or a memory.

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Abstract

L'invention concerne un procédé pour contrôler un courant électrique, qui comprend une étape de préparation d'un dispositif (20) qui comporte une électrode (22), une électrode (24) et une couche de semi-conducteur organique (26) disposée entre l'électrode (22) et l'électrode (24), et une étape de contrôle du courant électrique circulant entre l'électrode (22) et l'électrode (24) et associé au phénomène de résonance paramagnétique électronique de la couche de semi-conducteur organique (26) provoqué au moyen d'un champ magnétique et de micro-ondes. L'étape de contrôle comprend une étape dans laquelle le champ magnétique et/ou les micro-ondes et/ou la lumière irradiée sur la couche de semi-conducteur organique (26) sont modifiés.
PCT/JP2011/064031 2010-06-24 2011-06-20 Procédé et appareil pour contrôler un courant électrique WO2011162199A1 (fr)

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