WO2011155052A1 - Cellule de batterie solaire cristalline, et procédé de production associé - Google Patents

Cellule de batterie solaire cristalline, et procédé de production associé Download PDF

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Publication number
WO2011155052A1
WO2011155052A1 PCT/JP2010/059913 JP2010059913W WO2011155052A1 WO 2011155052 A1 WO2011155052 A1 WO 2011155052A1 JP 2010059913 W JP2010059913 W JP 2010059913W WO 2011155052 A1 WO2011155052 A1 WO 2011155052A1
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Prior art keywords
receiving surface
light
surface electrode
electrode
solar cell
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PCT/JP2010/059913
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English (en)
Japanese (ja)
Inventor
崎尾　進
竹井　日出夫
一也 斎藤
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株式会社アルバック
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Priority to JP2012519181A priority Critical patent/JPWO2011155052A1/ja
Priority to PCT/JP2010/059913 priority patent/WO2011155052A1/fr
Publication of WO2011155052A1 publication Critical patent/WO2011155052A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to a method for forming a light-receiving surface electrode of a crystalline solar cell, particularly a solar cell using a silicon substrate.
  • FIG. 5A is a schematic view showing the cell structure of a conventional crystalline solar cell
  • FIG. 5B is a plan view showing the cell structure of the conventional crystalline solar cell.
  • the cell 101 of the conventional crystalline solar cell has n + on the front side surface (the surface on which light 100 is incident) of the silicon substrate 103 on which the texture 102 is formed.
  • a type semiconductor layer 104 and an antireflection film 105 are sequentially formed. Further, on the antireflection film 105, a light receiving surface electrode 106 (a bus bar electrode 106a and a finger electrode 106b) extending in a straight line is formed on the n + type semiconductor layer 104. It is formed to be connected.
  • a p + type semiconductor layer 107 and a back electrode 108 are sequentially formed on the back side surface of the silicon substrate 103.
  • the light-receiving surface electrode 106 of a crystalline solar cell has been formed by screen printing using a silver paste.
  • the technique has a problem that the aperture ratio is as low as about 93%.
  • the screen plate and the surface of the solar cell are in contact with each other, so that there is a problem that the substrate is cracked or the mesh portion made of stainless steel comes into contact with the silicon layer to cause damage.
  • the prior art relating to the present invention includes the following.
  • the present invention has been made to solve the above-described problems of the conventional technology, and an object of the present invention is to provide a technology for forming a light receiving surface electrode of a solar battery cell that can improve an aperture ratio. It is in.
  • Another object of the present invention is to provide a technology for forming a light receiving surface electrode of a solar battery cell that does not damage the silicon layer.
  • the present invention is also effective when the bonding wire is made of gold, silver, copper, aluminum, palladium, or an alloy thereof.
  • the present invention is also effective when the light-receiving surface electrode is electrically connected to the first conductivity type layer of the semiconductor substrate via a connection film made of a conductive sintered body containing glass frit. is there.
  • the light receiving surface electrode includes a first light receiving surface electrode provided on the first conductivity type layer of the semiconductor substrate, and a second light receiving surface electrode provided on the first light receiving surface electrode.
  • the first light-receiving surface electrode is electrically connected to the first conductivity type layer of the semiconductor substrate through a first connection film made of the conductive sintered body, and It is also effective when the second light receiving surface electrode is electrically connected to the first light receiving surface electrode via the second connection film made of the conductive sintered body.
  • an antireflection film is provided on the first conductive type layer of the semiconductor substrate having the first conductive type layer on the light incident side surface side and the second conductive type layer on the back side.
  • the light-receiving surface electrode composed of a bonding wire made of a conductor is used as the solar cell substrate. It is a method for manufacturing a crystalline solar battery cell having a step of fixing the light receiving surface electrode to the first conductivity type layer of the semiconductor substrate while being fixed to the top.
  • the light receiving surface electrode includes first and second light receiving surface electrodes, and a step of applying and drying the conductive paste on the antireflection film to form a first connection film; Disposing the first light-receiving surface electrode on the first connection film; sintering the first connection film; and applying and drying the conductive paste on the first light-receiving surface electrode. It is also effective in the case of having a step of forming the second connection film and a step of sintering the second connection film.
  • a light receiving surface electrode in which a conductive film is applied to the bonding wire and dried to form a connection film is prepared, and the light receiving surface electrode is disposed on the solar cell substrate; It is also effective when it has the process of sintering this connection film
  • the process of applying the conductive paste is also effective when the dispenser method or the ink jet method is used.
  • the light-receiving surface electrode is constituted by a bonding wire made of a conductor, and the light-receiving surface electrode is formed when an electrode having an equivalent wiring resistance is formed as compared with the light-receiving surface electrode by screen printing of the prior art
  • the width of can be made very small.
  • the aperture ratio of the solar cells which was about 93% in the prior art, can be significantly improved to about 99%.
  • the conductive paste coating means does not come into contact with the solar cell substrate.
  • the substrate is not broken and the silicon layer is not damaged.
  • the light-receiving surface electrode made of a bonding wire is disposed on the antireflection film via the conductive paste, and in this state, the first connection film made of the conductive paste containing glass frit is baked.
  • the light-receiving surface electrode and the first conductive type layer of the semiconductor substrate are reliably electrically connected through the sintered connection film by fire-through due to the reaction between the antireflection film and the first connection film. can do.
  • the aperture ratio of the crystalline solar cell can be greatly improved.
  • SYMBOLS 1 Substrate for solar cells, 10 ... Silicon substrate (semiconductor substrate), 11 ... n ⁇ +> type semiconductor layer (first conductivity type layer), 12 ... Antireflection film, 13 ... p + type semiconductor layer (second conductivity type layer) ), 14 ... Back electrode layer, 15 ... First connection film, 16 ... First sintered connection film, 17 ... Second connection film, 18 ... Second sintered connection film, 21 ... Finger electrode (first electrode) 1 light-receiving surface electrode), 22 ... bus bar electrode (second light-receiving surface electrode), 30 ... crystalline solar cell
  • FIGS. 1 (a) to 1 (d) are cross-sectional views (part 1) showing the manufacturing process of the crystalline solar cell according to the present embodiment
  • FIGS. 2 (a) to (c) are the crystals of the same embodiment.
  • FIG. 3 is a plan view of the crystalline solar battery cell of the same embodiment. As shown in FIG.
  • n + type semiconductor layer 11 that is a first conductivity type layer and an antireflection film 12 are sequentially formed, and a p + type semiconductor layer 13 that is a second conductivity type layer and a back electrode layer 14 are sequentially formed on the back side thereof.
  • a solar cell substrate 1 is prepared.
  • the material of the antireflection film 12 is not particularly limited, but from the viewpoint of ensuring the reactivity with the conductive paste during sintering described later, silicon nitride (SiN), silicon oxide (SiO 2 ) and titanium oxide (TiO 2 ) can be preferably used. Further, the thickness of the antireflection film 12 is not particularly limited, but is preferably 100 to 500 nm from the viewpoint of reducing the reflectance. In addition, as a material of the back electrode layer 14, for example, a silver (Ag) paste can be suitably used.
  • first connection films (connection films) 15 made of a conductive paste described later are applied and formed on the surface of the antireflection film 12 at a predetermined interval. Thereafter, the first connection film 15 is dried.
  • the position where the first connection film 15 is formed by coating is a position corresponding to a position where a finger electrode (first light-receiving surface electrode) 21 described later is provided, for example, a length equivalent to the length of the finger electrode 21. Furthermore, it is good to apply and form.
  • the method for applying the first connection film 15 is not particularly limited, but from the viewpoint of forming the first connection film 15 with high accuracy, a method using a dispenser or a method using an ink jet is employed.
  • the width of the first connection film 15 is not particularly limited, but from the viewpoint of further improving the aperture ratio of the solar battery cell, the width of the first connection film 15 is set to be larger than the width of the finger electrode 21. It is preferable to make it small. Specifically, the width of the first connection film 15 is preferably set to 5 to 15 ⁇ m.
  • the thickness of the first connection film 15 is not particularly limited, but from the viewpoint of securing sufficient adhesive strength and further improving the aperture ratio of the solar battery cell, the antireflection film 12 is provided. It is preferable to make it thicker. Specifically, it is preferable to set the thickness of the first connection film 15 to 500 to 10,000 nm.
  • the conductive paste used for the first connection film 15 for example, a conductive paste described in JP-A-2006-295197 can be suitably used.
  • the conductive paste used in the present invention contains a conductive metal, an inorganic binder, and an organic vehicle.
  • the conductive metal that can be contained in the conductive paste used in the present invention include silver particles, and silver particles are most preferable.
  • the silver particles are preferably in flake form or powder form.
  • the particle size of the silver particles of the conductive paste is not particularly limited. However, the influence of the sintering characteristics (silver particles having a large particle size is larger than the speed of silver particles having a small particle size). Sintering at a slower speed) and ease of application, the average particle size of the silver particles is preferably 3.0-15.0 ⁇ m, more preferably 5.0-11.0 ⁇ m.
  • the particle size of the silver particles is smaller than 3.0 ⁇ m, the silver conductive paste exhibits a steep sintering behavior, and cracks between the two electrodes are caused by the mismatch of the sintering rate with the aluminum paste. Tend to occur.
  • the particle size of the silver particles is larger than 15.0 ⁇ m, the conductivity is lowered and the strength of the electrode film is reduced. This is because sintering does not proceed sufficiently.
  • silver particles contained in the conductive paste it is preferable that silver has a high purity (99% or more), but a substance having a purity of less than 99% may also be used according to the electrical requirements of the electrode pattern. it can.
  • the most preferable conductive metal in the conductive paste is silver particles, but conductive metals other than silver can be used similarly.
  • metals such as copper (Cu), gold (Au), palladium (Pd) and platinum (Pt) are useful.
  • alloys or mixtures of the aforementioned metals are useful in the present invention as well.
  • Cu—Au, Ag—Pd, Pt—Au, or the like can be used.
  • the content of the conductive metal in the conductive paste is not particularly limited as long as it is an amount that can achieve the object of the present invention. From the viewpoint of ensuring conductivity, It is preferably contained in an amount of 40 to 93% by mass based on the weight of the conductive paste.
  • aluminum (Al) can be added to the conductive paste for the purpose of improving desired characteristics.
  • the conductive paste used in the present invention contains an inorganic binder.
  • an inorganic binder a glass frit (fine particles) having a softening point of 450 to 550 ° C. can be suitably used.
  • Such a glass frit can bake the conductive paste at 600 to 800 ° C., appropriately sinter and wet, and properly adhere to the silicon substrate 10.
  • the softening point of the glass frit is lower than 450 ° C., sintering becomes excessive, and the effects of the present invention may not be sufficiently obtained.
  • the softening point of the glass frit is higher than 550 ° C., sufficient adhesion strength may not be exhibited, and liquid phase sintering of silver may not be promoted. This is because a sufficient melt flow does not occur during sintering.
  • the softening point is defined by ASTM (American Society for Testing and Materials) C338-57 fiber elongation method.
  • the glass frit contained in the conductive paste is not particularly limited, but considering both the softening point range and the glass fusibility, for example, silicate glass, lead borosilicate glass, etc. are suitable. Can be used. It is also possible to use glass that does not contain lead, such as zinc borosilicate.
  • the content of the glass frit as the inorganic binder is not particularly limited as long as it can achieve the object of the present invention, but is 2.0 to 10 based on the total weight of the conductive paste.
  • the content is preferably 0.0 mass%, more preferably 3.0 to 6.0 mass%. If the glass frit content is less than 2.0% by mass, the adhesive strength may be insufficient. On the other hand, if the glass frit content is more than 10.0% by mass, for example, post-processing is performed. The soldering process may be hindered by glass floating or the like.
  • the conductive paste used in the present invention contains an organic vehicle.
  • An inert liquid can be used as the organic vehicle contained in the conductive paste.
  • Such inert liquids include organic liquids such as alcohols; alcohol esters (such as acetate or propionate); starch (such as pine oil and terpineol); resins (such as polymethacrylate).
  • organic liquids such as alcohols; alcohol esters (such as acetate or propionate); starch (such as pine oil and terpineol); resins (such as polymethacrylate).
  • various solutions such as a pine oil solution of ethyl cellulose or a solution of ethylene glycol monobutyl ether monoacetate, or a terpineol solution of ethyl cellulose can be mentioned.
  • a preferable content of the organic vehicle is 5 to 50% by mass based on the total weight of the conductive paste.
  • a thickener, a stabilizer, and other general additives can be added to the conductive paste used in the present invention.
  • a tackifier agent thickener
  • a stabilizer and the like can be added, or a dispersant, a viscosity modifier and the like can be added as other general additives.
  • the amount of the additive is determined based on the properties of the finally obtained conductive paste, and can be appropriately determined by the manufacturer involved. Several types of additives can also be used.
  • the conductive paste used in the present invention preferably has a viscosity within a predetermined range.
  • it can be achieved by adding the above-described tackifier (thickener).
  • the electrically conductive paste used for this invention can be manufactured by mixing each component mentioned above with a well-known 3 roll kneader.
  • the viscosity of the conductive paste used in the present invention is not particularly limited, but is measured at a rotation speed of 10 rpm and a temperature of 25 ° C. using a Brookfield HBT viscometer and a utility cup using a # 14 spindle. At this time, it is preferable to adjust the pressure to 50 to 300 Pa ⁇ S.
  • a plurality of first connection films 15 made of the conductive paste described above are applied and formed on the antireflection film 12, and then the first connection films 15 are dried.
  • a preferable drying temperature is 180 ° C. or less.
  • finger electrodes 21 made of bonding wires are aligned and placed (placed) on each of the first connection films 15.
  • the material of the bonding wire constituting the finger electrode 21 is not particularly limited, but gold (Au), silver (Ag), copper (Cu), aluminum (Al), palladium (Pd) Or those made of these alloys can be suitably used.
  • the cross-sectional shape of the bonding wire which comprises the finger electrode 21 is a perfect circle shape, and it is so preferable that the diameter is small from a viewpoint of improving an aperture ratio.
  • the diameter is preferably 10 to 100 ⁇ m.
  • the solar cell substrate 1 on which the finger electrodes 21 are arranged is heated and sintered in the air at a temperature of 600 to 800 ° C. for 2 to 15 minutes.
  • the finger electrode 21 may be pressurized.
  • the glass frit contained in the conductive paste of the first connection film 15 reacts with the substance of the antireflection film 12, and the antireflection film 12 melts, as shown in FIG.
  • the first connection film 16 (hereinafter referred to as “first sintered connection film”) 16 is buried in the antireflection film 12 (fire-through).
  • each finger electrode 21 is fixed to the first sintered connection film 16 by the above-described sintering step.
  • the first sintered connection film 16 and the n + -type semiconductor layer 11 come into contact with each other and are electrically connected to each other, so that the finger electrode 21 passes through the first sintered connection film 16 that is a connection film.
  • n + type semiconductor layer 11 are electrically connected.
  • the width of the first sintered connection film 16 is smaller than the width of each finger electrode 21.
  • the silver paste of the back surface electrode layer 14 is also baked by the sintering process described above, and the sintered back surface electrode layer 14a is formed.
  • the second connection film 17 made of the above-described conductive paste is applied and formed on each finger electrode 21, and then these are dried.
  • the method for applying the second connection film 17 is not particularly limited, but from the viewpoint of forming the second connection film 17 with high accuracy, a method using a dispenser or a method using an ink jet is employed. It is preferable.
  • the width of the second connection film 17 is not particularly limited, but from the viewpoint of further improving the aperture ratio of the solar battery cell, the width of the second connection film 17 is larger than the width of the bus bar electrode 22 described later. It is preferable to reduce the length (the length in the direction orthogonal to the direction in which the bus bar electrode 22 extends).
  • the width of the second connection film 17 is preferably set to 5 to 15 ⁇ m.
  • a preferable drying temperature of the second connection film 17 is 180 ° C. or lower.
  • the thickness of the first connection film 15 is preferably set to 500 to 10,000 nm.
  • the bus bar electrodes 22 made of bonding wires are aligned and placed (placed) on each of the second connection films 17.
  • the material of the bonding wire constituting the bus bar electrode 22 is not particularly limited, but gold (Au), silver (Ag), copper (Cu), aluminum (Al), palladium (Pd) Or those made of these alloys can be suitably used. Among these, it is preferable to use silver (Ag) from the viewpoint of improving conductivity.
  • the cross-sectional shape of the bonding wire which comprises the bus-bar electrode 22 is a perfect circle shape, From the viewpoint of improving the aperture ratio of a photovoltaic cell, the diameter is so preferable that it is small. However, considering the strength required for the electrode and the size of the wiring resistance, the diameter is preferably 120 to 500 ⁇ m or less.
  • the solar cell substrate 1 on which the bus bar electrodes 22 are arranged is heated and sintered in air at a temperature of 600 to 800 ° C. for 2 to 15 minutes.
  • the bus bar electrode 22 may be pressurized.
  • the second connection film 17 is sintered, and each finger electrode 21 is fixed to the sintered second connection film 18 (hereinafter referred to as “second sintered connection film”).
  • each bus bar electrode 22 is fixed to the second sintered connection film 18.
  • the bus bar electrode 22 and the finger electrode 21 are electrically connected via the second sintered connection film 18 which is a connection film, and the silicon substrate 10 is connected.
  • a crystalline solar cell 30 having first and second light-receiving surface electrodes that are electrically connected to each other is obtained.
  • the finger electrode 21 and the bus bar electrode 22 that are light receiving surface electrodes are configured by bonding wires made of conductors, compared with the light receiving surface electrodes by screen printing of the prior art.
  • the width of the light receiving surface electrode can be made very small.
  • the aperture ratio of the crystalline solar battery cell can be greatly improved.
  • the means for applying the conductive paste is the solar cell substrate. 1 is not touched, and the substrate is not broken and the silicon layer is not damaged as in the case of conventional screen printing.
  • the finger electrode 21 made of a bonding wire is disposed on the antireflection film 12 via a conductive paste, and in this state, the first connection made of a conductive paste containing glass frit is used. Since the film 15 is sintered, the finger electrode 21 and the n + type semiconductor of the semiconductor substrate 10 are interposed through the first sintered connection film 16 by fire-through due to the reaction between the antireflection film 12 and the first connection film 15. The layer 11 can be reliably electrically connected.
  • FIGS. 1 (a) to 4 (c) show other embodiments of the present invention.
  • the conductive paste is applied, dried and sintered, so that on the solar cell substrate 1,
  • the finger electrode 21 and the n + type semiconductor layer 11 are electrically connected through the first sintered connection film 16.
  • a plurality of second connection films 17 made of the conductive paste are applied and formed on the surface of the bus bar electrode 22 at a predetermined interval, and then dried.
  • the position where the second connection film 17 on the surface of the bus bar electrode 22 is formed by application is preferably a connection portion with the finger electrode 21 provided on the solar cell substrate 1.
  • the method of applying the second connection film 17 is not particularly limited, but from the viewpoint of forming the second connection film 17 on the surface of the bus bar electrode 22 with high accuracy, a method using a dispenser or inkjet It is preferable to adopt the method according to Further, the width of the second connection film 17 is not particularly limited, but from the viewpoint of further improving the aperture ratio of the solar battery cell, the length of the second connection film 17 is larger than the width of the bus bar electrode 22. It is preferable to reduce (the length in the direction orthogonal to the direction in which the bus bar electrode 22 extends). On the other hand, the thickness of the second connection film 17 is not particularly limited, but it is 500 to 10,000 nm from the viewpoint of securing sufficient adhesive strength and further improving the aperture ratio of the solar battery cell. It is preferable to set.
  • the bus bar electrode 22 is arranged (placed) so that the finger electrode 21 on the first layer and the second connection film 17 are in contact with each other. Thereafter, the solar cell substrate 1 is heated and sintered in air at a temperature of 600 to 800 ° C. for 2 to 15 minutes. In this case, the bus bar electrode 22 may be pressurized. As a result, as in the above embodiment, the second connection film 17 is sintered, and each finger electrode 21 is fixed to the second sintered connection film 18 as shown in FIG.
  • each bus bar electrode 22 is fixed to the second sintered connection film 18.
  • the bus bar electrode 22 and the finger electrode 21 are electrically connected via the second sintered connection film 18 and electrically connected to the silicon substrate 10 as in the above embodiment.
  • the crystalline solar cell 30 which has a 2nd light-receiving surface electrode is obtained.
  • the present invention is not limited to the above-described embodiment, and various changes can be made.
  • the second connection film 17 is formed by applying a conductive paste to the bus bar electrode 22, but the present invention is not limited to this.
  • the first connecting film 15 can be formed by applying a conductive paste to the finger electrode 21 and sintered.
  • a connection film can be formed on the entire surface of the finger electrode 21 and the bus bar electrode 22, respectively.
  • the semiconductor substrate used in the present invention either a single crystal silicon substrate or a polycrystalline silicon substrate can be used as the semiconductor substrate used in the present invention.

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Abstract

La présente invention concerne une technique de production d'électrode de surface de réception de lumière pour cellule de batterie solaire cristalline, permettant d'améliorer le rapport d'ouverture, et évitant d'endommager une couche de silicium. L'invention concerne spécifiquement une cellule de batterie solaire cristalline, comprenant : un substrat de silicium (10), comportant une couche semi-conductrice de type n+ (11) sur son côté de surface avant du côté lumière incidente et une couche semi-conductrice de type p+ (13) sur son côté de surface arrière ; un film antiréfléchissant (12), et une électrode en doigt (21) et une électrode de barre omnibus (22) qui servent d'électrodes de surface de réception de lumière, toutes formées sur la couche semi-conductrice de type n+ (11) du substrat de silicium (10) ; et une couche d'électrode de surface arrière frittée (14a), formée sur la couche semi-conductrice de type p+ (13) sur le substrat de silicium (10). L'électrode en doigt (21) et l'électrode de barre omnibus (22) sont toutes les deux composées d'un fil de connexion comprenant un matériau électroconducteur. Le fil de connexion est composé d'or, d'argent, de cuivre, d'aluminium, de palladium, ou d'un de leurs alliages.
PCT/JP2010/059913 2010-06-11 2010-06-11 Cellule de batterie solaire cristalline, et procédé de production associé WO2011155052A1 (fr)

Priority Applications (2)

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JP2012519181A JPWO2011155052A1 (ja) 2010-06-11 2010-06-11 結晶系太陽電池セル及びその製造方法
PCT/JP2010/059913 WO2011155052A1 (fr) 2010-06-11 2010-06-11 Cellule de batterie solaire cristalline, et procédé de production associé

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015528178A (ja) * 2012-06-12 2015-09-24 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 接着促進剤を有する導電性ペースト
CN114530508A (zh) * 2020-11-02 2022-05-24 苏州阿特斯阳光电力科技有限公司 Perc电池及光伏组件

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