WO2011152858A3 - Mémoire à base d'oxyde - Google Patents

Mémoire à base d'oxyde Download PDF

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Publication number
WO2011152858A3
WO2011152858A3 PCT/US2011/000971 US2011000971W WO2011152858A3 WO 2011152858 A3 WO2011152858 A3 WO 2011152858A3 US 2011000971 W US2011000971 W US 2011000971W WO 2011152858 A3 WO2011152858 A3 WO 2011152858A3
Authority
WO
WIPO (PCT)
Prior art keywords
forming
oxide based
based memory
tunnel barrier
electrode
Prior art date
Application number
PCT/US2011/000971
Other languages
English (en)
Other versions
WO2011152858A2 (fr
Inventor
D. V. Nirmal Ramaswamy
Gurtej S. Sandhu
Original Assignee
Micron Technology, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology, Inc. filed Critical Micron Technology, Inc.
Publication of WO2011152858A2 publication Critical patent/WO2011152858A2/fr
Publication of WO2011152858A3 publication Critical patent/WO2011152858A3/fr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/55—Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

La présente invention concerne des procédés, dispositifs, et systèmes associés à une mémoire à base d'oxyde. Selon un ou des modes de réalisation, l'invention concerne un procédé de formation d'une cellule de mémoire à base d'oxyde comprenant la formation d'une première électrode, la formation d'une barrière tunnel, une première partie de la barrière tunnel comprenant un premier matériau et une seconde partie de la barrière tunnel comprenant un second matériau, la formation d'une source d'oxygène, la formation d'une seconde électrode.
PCT/US2011/000971 2010-06-04 2011-05-27 Mémoire à base d'oxyde WO2011152858A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/794,430 2010-06-04
US12/794,430 US8796656B2 (en) 2010-06-04 2010-06-04 Oxide based memory

Publications (2)

Publication Number Publication Date
WO2011152858A2 WO2011152858A2 (fr) 2011-12-08
WO2011152858A3 true WO2011152858A3 (fr) 2012-04-05

Family

ID=45063777

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/000971 WO2011152858A2 (fr) 2010-06-04 2011-05-27 Mémoire à base d'oxyde

Country Status (3)

Country Link
US (3) US8796656B2 (fr)
TW (1) TWI430489B (fr)
WO (1) WO2011152858A2 (fr)

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US7082052B2 (en) 2004-02-06 2006-07-25 Unity Semiconductor Corporation Multi-resistive state element with reactive metal
US20060171200A1 (en) 2004-02-06 2006-08-03 Unity Semiconductor Corporation Memory using mixed valence conductive oxides
US20130082232A1 (en) 2011-09-30 2013-04-04 Unity Semiconductor Corporation Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells
US8559209B2 (en) 2011-06-10 2013-10-15 Unity Semiconductor Corporation Array voltage regulating technique to enable data operations on large cross-point memory arrays with resistive memory elements
US8270193B2 (en) * 2010-01-29 2012-09-18 Unity Semiconductor Corporation Local bit lines and methods of selecting the same to access memory elements in cross-point arrays
US8937292B2 (en) 2011-08-15 2015-01-20 Unity Semiconductor Corporation Vertical cross point arrays for ultra high density memory applications
US8565003B2 (en) 2011-06-28 2013-10-22 Unity Semiconductor Corporation Multilayer cross-point memory array having reduced disturb susceptibility
US8638584B2 (en) * 2010-02-02 2014-01-28 Unity Semiconductor Corporation Memory architectures and techniques to enhance throughput for cross-point arrays
KR20110132125A (ko) * 2010-06-01 2011-12-07 삼성전자주식회사 비휘발성 메모리 소자 및 비휘발성 메모리 소자의 형성방법
JP5457961B2 (ja) * 2010-07-16 2014-04-02 株式会社東芝 半導体記憶装置
US8891276B2 (en) 2011-06-10 2014-11-18 Unity Semiconductor Corporation Memory array with local bitlines and local-to-global bitline pass gates and gain stages
US9117495B2 (en) 2011-06-10 2015-08-25 Unity Semiconductor Corporation Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
US10566056B2 (en) 2011-06-10 2020-02-18 Unity Semiconductor Corporation Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
TWI458077B (zh) * 2012-05-31 2014-10-21 Ind Tech Res Inst 電阻式隨機存取記憶體及其製造方法
US10134916B2 (en) 2012-08-27 2018-11-20 Micron Technology, Inc. Transistor devices, memory cells, and arrays of memory cells
US9224945B2 (en) * 2012-08-30 2015-12-29 Micron Technology, Inc. Resistive memory devices
US20140077149A1 (en) * 2012-09-14 2014-03-20 Industrial Technology Research Institute Resistance memory cell, resistance memory array and method of forming the same
US8796751B2 (en) 2012-11-20 2014-08-05 Micron Technology, Inc. Transistors, memory cells and semiconductor constructions
US9053801B2 (en) 2012-11-30 2015-06-09 Micron Technology, Inc. Memory cells having ferroelectric materials
US9276203B2 (en) * 2012-12-20 2016-03-01 Intermolecular, Inc. Resistive switching layers including Hf-Al-O
US8921821B2 (en) * 2013-01-10 2014-12-30 Micron Technology, Inc. Memory cells
US8883557B1 (en) * 2013-09-03 2014-11-11 Intermolecular, Inc. Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition
US10153155B2 (en) 2015-10-09 2018-12-11 University Of Florida Research Foundation, Incorporated Doped ferroelectric hafnium oxide film devices
US10565495B2 (en) * 2015-12-30 2020-02-18 SK Hynix Inc. Synapse and neuromorphic device including the same
US20190198100A1 (en) * 2016-09-30 2019-06-27 Intel Corporation Conductive bridge resistive random access memory cell
US10937482B2 (en) * 2017-12-27 2021-03-02 Micron Technology, Inc. Memory cells and arrays of elevationally-extending strings of memory cells
US10937904B2 (en) 2017-12-27 2021-03-02 Micron Technology, Inc. Programmable charge-storage transistor, an array of elevationally-extending strings of memory cells, and a method of forming an array of elevationally-extending strings of memory cells
CN113611722A (zh) * 2020-05-12 2021-11-05 联芯集成电路制造(厦门)有限公司 电阻式存储装置以及其制作方法
US11581335B2 (en) * 2020-06-23 2023-02-14 Taiwan Semiconductor Manufacturing Company Limited Ferroelectric tunnel junction devices with metal-FE interface layer and methods for forming the same

Citations (4)

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Publication number Priority date Publication date Assignee Title
US20060171200A1 (en) * 2004-02-06 2006-08-03 Unity Semiconductor Corporation Memory using mixed valence conductive oxides
US20080211036A1 (en) * 2007-03-02 2008-09-04 Samsung Electronics Co., Ltd. Bipolar Resistive Memory Device Having Tunneling Layer
US20090225582A1 (en) * 2008-03-07 2009-09-10 Unity Semiconductor Corporation Data retention structure for non-volatile memory
US20100019219A1 (en) * 2008-07-24 2010-01-28 Lee Yu-Jin Resistive memory device and method for manufacturing the same

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US7135734B2 (en) * 2001-08-30 2006-11-14 Micron Technology, Inc. Graded composition metal oxide tunnel barrier interpoly insulators
US7326979B2 (en) 2002-08-02 2008-02-05 Unity Semiconductor Corporation Resistive memory device with a treated interface
US7538338B2 (en) 2004-09-03 2009-05-26 Unity Semiconductor Corporation Memory using variable tunnel barrier widths
US7507629B2 (en) 2004-09-10 2009-03-24 Gerald Lucovsky Semiconductor devices having an interfacial dielectric layer and related methods
KR100644405B1 (ko) * 2005-03-31 2006-11-10 삼성전자주식회사 불휘발성 메모리 장치의 게이트 구조물 및 이의 제조 방법
US7436018B2 (en) * 2005-08-11 2008-10-14 Micron Technology, Inc. Discrete trap non-volatile multi-functional memory device
US20070105390A1 (en) * 2005-11-09 2007-05-10 Oh Travis B Oxygen depleted etching process
WO2009015298A2 (fr) * 2007-07-25 2009-01-29 Intermolecular, Inc. Eléments de mémoire non volatile
US7742323B2 (en) * 2007-07-26 2010-06-22 Unity Semiconductor Corporation Continuous plane of thin-film materials for a two-terminal cross-point memory
US8264864B2 (en) * 2008-12-19 2012-09-11 Unity Semiconductor Corporation Memory device with band gap control
US8045364B2 (en) * 2009-12-18 2011-10-25 Unity Semiconductor Corporation Non-volatile memory device ion barrier

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US20060171200A1 (en) * 2004-02-06 2006-08-03 Unity Semiconductor Corporation Memory using mixed valence conductive oxides
US20080211036A1 (en) * 2007-03-02 2008-09-04 Samsung Electronics Co., Ltd. Bipolar Resistive Memory Device Having Tunneling Layer
US20090225582A1 (en) * 2008-03-07 2009-09-10 Unity Semiconductor Corporation Data retention structure for non-volatile memory
US20100019219A1 (en) * 2008-07-24 2010-01-28 Lee Yu-Jin Resistive memory device and method for manufacturing the same

Also Published As

Publication number Publication date
TW201218473A (en) 2012-05-01
US8796656B2 (en) 2014-08-05
US20140362634A1 (en) 2014-12-11
US20110297927A1 (en) 2011-12-08
US10622061B2 (en) 2020-04-14
US9805789B2 (en) 2017-10-31
WO2011152858A2 (fr) 2011-12-08
US20180068723A1 (en) 2018-03-08
TWI430489B (zh) 2014-03-11

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