WO2011138998A1 - Composition pour fabriquer un contact arrière pour une cellule solaire cristalline - Google Patents

Composition pour fabriquer un contact arrière pour une cellule solaire cristalline Download PDF

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Publication number
WO2011138998A1
WO2011138998A1 PCT/KR2010/003436 KR2010003436W WO2011138998A1 WO 2011138998 A1 WO2011138998 A1 WO 2011138998A1 KR 2010003436 W KR2010003436 W KR 2010003436W WO 2011138998 A1 WO2011138998 A1 WO 2011138998A1
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Prior art keywords
aluminum powder
solar cell
composition
back electrode
crystalline solar
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PCT/KR2010/003436
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English (en)
Korean (ko)
Inventor
유시범
김홍헌
황선암
강돈오
사영호
Original Assignee
한국다이요잉크 주식회사
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Priority to CN201080042362.7A priority Critical patent/CN102714237B/zh
Publication of WO2011138998A1 publication Critical patent/WO2011138998A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a composition for preparing a crystalline solar cell back electrode, and in particular, to use an aluminum powder of a smaller size (size) than in the prior art, more specifically, it is possible to lower the series resistance (Rs_contact resistance) value, accordingly
  • the present invention relates to a back electrode material for manufacturing a high efficiency solar cell capable of having a remarkably excellent photoelectric conversion efficiency (Efficiency).
  • a crystalline solar cell is mainly a silicon material is used as a semiconductor device that converts solar energy directly into electricity, as shown in Figure 1, the silicon wafer 10 and the silicon wafer (basically forming a pn junction structure) ( 10 is formed on the top surface of the anti-reflection film 20 and the silicon wafer 10 and the printed on the upper surface and the lower surface of the silicon wafer 10 so as to be able to absorb light well inside the solar cell 10 It consists of a front electrode 30 and a rear electrode 40 for drawing the electricity generated to the outside.
  • Silver (Ag) is used as the main electrode material as the front electrode 20 and aluminum (Al) is used as the main electrode material as the back electrode 40.
  • the surface may be roughened to reduce the reflectance of incident sunlight.
  • the conventional rear electrode used in the crystalline solar cell as described above is formed by a process of printing and baking and modularizing the aluminum paste, which is the back electrode material on the silicon wafer, conventionally fired for manufacturing the crystalline solar cell Due to the stress caused by the difference in thermal expansion coefficient between the wafer and the back electrode during the sintering process, there was a problem that bowing phenomenon occurred due to the bending or bending of the wafer after the firing process. In addition to this, it is difficult to apply a thin film silicon wafer, which causes a cost increase of the wafer in manufacturing a solar cell.
  • the inventors of the Republic of Korea Patent No. 10-0801168 as a high-efficiency solar cell back electrode material, the acrylate (acrylate) or cellulose (cellulose) resin 0.5 to 20 parts by weight
  • a mixed composition consisting of 40 to 90 parts by weight of powder, 0.5 to 10 parts by weight of inorganic binder, and 0.1 to 10 parts by weight of an additive for increasing adhesion to the wafer was registered.
  • the back electrode material for manufacturing a high efficiency solar cell made of the mixed composition has a high series resistance (Rs_contact resistance) value and thus insufficient photoelectric conversion efficiency (Efficiency).
  • the bowing phenomenon should be further reduced without degrading the photoelectric conversion efficiency.
  • the back electrode material can no longer reduce the bowing phenomenon.
  • An object of the present invention for solving the above problems is to provide a composition for preparing a crystalline solar cell back electrode that can lower the series resistance (Rs_contact resistance) value, thereby having a significantly superior photoelectric conversion efficiency (Efficiency). .
  • the present invention for achieving the above object is a composition for manufacturing a back electrode used to manufacture a crystalline solar cell in which the front electrode and the back electrode is formed on the front, back of the wafer, acrylate (acrylate) or cellulose (cellulose) ) Is composed of a mixture of a resin, an aluminum powder, an inorganic binder, and an additive for increasing adhesion to the wafer.
  • the aluminum powder is composed of an aluminum powder having a size of 30 to 100 nanometers, It is a composition for preparing a crystalline solar cell back electrode, characterized in that the aluminum powder of 2 ⁇ 10 micron size is mixed.
  • the aluminum powder is preferably mixed with 0.01 to 7.0 parts by weight of aluminum powder of 30 to 100 nanometers and 39.9 to 85.0 parts by weight of aluminum powder of 2 to 10 microns.
  • the mixed composition may further comprise a fumed silica (fumed silica), the fumed silica (fumed silica) is 0.01 to 0.01 to 20 parts by weight based on acrylate (acrylate) or cellulose (cellulose) resin It can be included in 10 parts by weight.
  • a fumed silica fumed silica
  • the fumed silica is 0.01 to 0.01 to 20 parts by weight based on acrylate (acrylate) or cellulose (cellulose) resin It can be included in 10 parts by weight.
  • the present invention described above is a composition for preparing a crystalline solar cell back electrode comprising a mixture composition of an acrylate-based or cellulose-based resin, an aluminum powder, an inorganic binder, and an additive for increasing adhesion to a wafer.
  • an aluminum powder having a smaller size than the related art the series resistance (Rs_contact resistance) value can be lowered, thereby making it possible to have a remarkably excellent photoelectric conversion efficiency.
  • the present invention further comprises a porous silica (fumed silica)
  • a mixed composition By using a mixed composition, there is an effect that can reduce the bowing phenomenon remarkably superior to the conventional.
  • FIG. 1 is a cross-sectional view showing the structure of a typical crystalline solar cell.
  • FIG. 2 is a schematic diagram for explaining the principle of a typical crystalline solar cell
  • FIG. 3 is a block flow diagram illustrating an example of a manufacturing process of the composition for preparing a crystalline solar cell back electrode according to the present invention
  • Figure 4 is a graph showing an example of the series resistance value according to the content of aluminum nano powder in the back electrode material prepared according to the present invention and the prior art,
  • FIG. 6 is a graph showing the bending characteristics according to the printing thickness of the electrode material in each of the back electrode material containing porous silica and the back electrode material not containing porous silica according to the prior art
  • Figure 7 is a schematic diagram showing the measurement of the light conversion efficiency of the crystalline solar cell using the back electrode material of the present invention.
  • FIG. 3 is a block flow diagram for explaining an example of the manufacturing process of the composition for producing a crystalline solar cell back electrode according to the present invention.
  • the composition for preparing a crystalline solar cell rear electrode comprises a first step (S1) of washing the raw material input container, and the resin, inorganic binder and additives in the raw material input container of the first process.
  • a second step (S2) of measuring and injecting a base material a third step (S3) of mixing the base material introduced into the raw material input container through a mixing machine, and a blending material having undergone the third process
  • the resin, the inorganic binder, and the additive which are the fine base raw materials, are first blended and sufficiently paste, and the fine aluminum powder powder is mixed therein, so that the aluminum powder is more evenly dispersed, thereby providing more excellent conductivity. Preventing the occurrence of beads and warpage, reducing contact resistance, forming a limited back electrode, and the like.
  • An eighth process (S8) of mixing and extruding the blended raw material into and mixing the raw material may be performed, and a ninth process (S9) of measuring the paste material passed through the eighth process to confirm physical properties.
  • the back electrode material of the raw material mixture prepared as a paste is printed on a silicon wafer and dried, and then sintered to form the back electrode constituting the crystalline solar cell.
  • the composition for preparing a crystalline solar cell back electrode according to the present invention is a mixed composition of an acrylate-based or cellulose-based resin, an aluminum powder, an inorganic binder, and an additive for increasing adhesion to the wafer. Is made of.
  • the acrylate-based or cellulose-based resin in the paste-type back electrode material of the present invention functions to provide fluidity in the screen printing process for forming the front electrode and the back electrode of the crystalline solar cell.
  • the aluminum powder provides conductivity to the rear electrode and partially couples with the silicon wafer to form an alloy layer (p +), reduces contact resistance and facilitates formation of the rear electrode.
  • the 30-100 nanometer aluminum powder is preferably an aluminum powder powder having an average particle size of 80 nm, and the present invention can further reduce the series resistance value by using an aluminum powder having a smaller size than the conventional one. Therefore, there is an effect that can have a remarkably excellent photoelectric conversion efficiency (Efficiency).
  • composition in which an aluminum powder having a size of 30 to 100 nanometers and an average particle size of 2 micron aluminum powder, 4 micron aluminum powder, 6 micron aluminum powder, and 10 micron aluminum powder are mixed.
  • the aluminum powder is more preferably made of a mixed composition of 0.01 to 7.0 parts by weight of aluminum powder of 30 to 100 nanometers and 39,9 to 85.0 parts by weight of aluminum powder of 2 to 10 microns. It is preferable to mix the amount a little more by using an aluminum powder of a smaller size than the conventional one.
  • the content of the above-described aluminum powder which is composed of a mixed composition of a plurality of particle sizes, prevents the occurrence of beads and warps when forming the back electrode with the paste-type electrode material of the present invention on the wafer, and also has an excellent BSF layer on the wafer. It provides formation and adhesion, and enables stable formation of the back electrode.
  • the inorganic binder functions to give adhesion to the electrode material of the present invention, which is a paste on the silicon wafer, during printing after printing the electrode material of the present invention for manufacturing a crystalline solar cell.
  • the inorganic binder is preferably using a glass raw material (Glass Frit), silicon dioxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), boron oxide (B 2 O 3 ), bismuth oxide (Bi 2 O 3 ), Sodium oxide (Na 2 O), zinc oxide (ZnO) may be made of a compound in which two or more raw materials or a whole are mixed.
  • Glass Frit glass raw material
  • SiO 2 silicon dioxide
  • Al 2 O 3 aluminum oxide
  • B 2 O 3 boron oxide
  • Bi 2 O 3 bismuth oxide
  • Na 2 O zinc oxide
  • ZnO zinc oxide
  • the additive is an appropriate value for the effect of improving the antifoam or leveling, dispersion stability and adhesion with the wafer during the printing operation for the production of crystalline solar cells.
  • the additive is preferably used by selecting any one or two or more of thallium oxide (Tl 2 O 3 ), zinc oxide (ZnO), bismuth oxide (Bi 2 O 3 ).
  • composition ratio of the raw materials is preferably composed of 40 to 90 parts by weight of aluminum powder, 0.5 to 10 parts by weight of inorganic binder, and 0.1 to 10 parts by weight of additive based on 0.5 to 20 parts by weight of acrylate or cellulose resin.
  • the acrylate-based or cellulose-based resin When used in an amount of 0.5 parts by weight or less, it is difficult to perform smooth screen printing when used in the manufacture of solar cells, and in particular, it is difficult to form a uniform film thickness and pattern when printing, and when printing exceeds 20 parts by weight It is difficult to form a precise pattern, such as a large amount of ink dropping during operation, such as bleeding phenomenon, and it causes loss of electrode resistance because it lowers nonvolatile matter and aluminum content during firing.
  • Bead Bead
  • BSF Back Surface Field
  • the inorganic binder When the inorganic binder is used in an amount of 0.5 parts by weight or less, it becomes difficult to express a function for forming adhesion to the wafer during the firing operation for manufacturing a solar cell. When the inorganic binder exceeds 10 parts by weight, the adhesion to the wafer may be increased, but And it acts to increase the contact resistance value of the electrode material, which is a paste, which hinders the flow of electrons formed in the solar cell, thereby lowering the conversion efficiency and causing warpage or bead generation.
  • the mixed composition further comprises a fumed silica (fumed silica).
  • Porous silica has a very large specific surface area because it has a porosity, as described later in the present invention by applying such a porous silica to the mixed composition, the conventional bowing (improving) phenomenon is improved.
  • the present invention is a mixture further comprising a porous silica (fumed silica)
  • a porous silica fumed silica
  • porous silica is contained in 0.01 to 10 parts by weight based on 0.5 to 20 parts by weight of the acrylate (acrylate) or cellulose (cellulose) -based resin, it was confirmed that the effect is the most excellent.
  • Figures 4 to 7 show various experimental results for the composition for producing a back electrode having the above-described configuration of the present invention.
  • the prior art in the experimental results means the electrode material according to the Republic of Korea Patent No. 10-0801168 described above or the experimental results for this.
  • Figure 4 is a graph showing an example of the series resistance value (Rs) according to the content of the aluminum powder in the back electrode material prepared according to the present invention and the prior art, respectively.
  • the aluminum powder was mixed with an aluminum powder having a size of 30 to 100 nanometers and an aluminum powder having a size of 2 to 10 microns.
  • the aluminum powder has a size of 50 to 130 nanometers.
  • the aluminum powder and the aluminum powder of 2 to 10 microns in size were used.
  • the series resistance value is lower than the prior art in the entire content range containing aluminum nano powder, especially aluminum nano powder was included in 6 to 8% by weight When the series resistance value is noticeably low.
  • Rs series resistance value
  • the aluminum powder was included in an amount of 65 parts by weight based on 10 parts by weight of the acrylate-based or cellulose-based resin, and the aluminum powder was mixed with an aluminum powder having a size of 2-10 microns.
  • the series resistance values were measured while varying the average particle size of the nano-size aluminum powder.
  • Figure 6 is a graph showing the results of bending characteristics according to the printing thickness of the electrode material in each of the back electrode material containing porous silica and the back electrode material not containing porous silica according to the prior art according to the present invention.
  • warpage was measured by the thickness of the electrode material, the result of the bowing phenomenon according to this, as shown in Figure 6, compared to the prior art that does not include a porous silica in accordance with the present invention in all sections, warpage phenomenon is significantly You can see the shrinkage.
  • Figure 7 is a schematic diagram showing the measurement of the light conversion efficiency of the crystalline solar cell using the back electrode material of the present invention.
  • the table of FIG. 7 calculates the efficiency by measuring voltage and current when artificial sunlight is reflected on the crystalline solar cell to which the present invention is applied.
  • the present invention can reduce the series resistance (Rs_contact resistance) value by using an aluminum powder of a smaller size (size) than the conventional, accordingly, the rear surface for manufacturing a high efficiency crystalline solar cell that can have a remarkably excellent photoelectric conversion efficiency An electrode material can be provided.

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Abstract

La présente invention concerne une composition pour fabriquer un contact arrière pour une cellule solaire cristalline. Le matériau de contact arrière utilisé pour fabriquer une cellule solaire cristalline, dont un contact avant et un contact arrière sont formés sur les côtés avant et arrière d'une tranche, respectivement, comprend une composition de mélange constituée d'une résine à base d'acrylate ou de cellulose, de poudre d'aluminium, d'un liant inorganique, et d'un additif pour augmenter l'adhérence à une tranche, la poudre d'aluminium étant un mélange de poudre qui contient de la poudre d'aluminium, dont la taille va 30 à 100 nm, et de la poudre d'aluminium, dont la taille va 2 à 10 μm. La composition de selon la présente invention utilise lesdits types de poudre d'aluminium, dont les tailles sont inférieures à celles décrites dans l'état de la technique, réduisant ainsi la résistance de contact Rs et permettant ainsi à une cellule solaire de posséder un excellent rendement de conversion photoélectrique.
PCT/KR2010/003436 2010-05-07 2010-05-29 Composition pour fabriquer un contact arrière pour une cellule solaire cristalline WO2011138998A1 (fr)

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CN201080042362.7A CN102714237B (zh) 2010-05-07 2010-05-29 结晶太阳能电池后面电极制造用组合物

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KR20100042990A KR101178180B1 (ko) 2010-05-07 2010-05-07 결정형 태양전지 후면 전극 제조용 조성물
KR10-2010-0042990 2010-05-07

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015048197A1 (fr) * 2013-09-27 2015-04-02 Sunpower Corporation Structures de contact pour cellules solaires formées à partir d'une pâte de métal

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140158192A1 (en) * 2012-12-06 2014-06-12 Michael Cudzinovic Seed layer for solar cell conductive contact
WO2014157958A1 (fr) * 2013-03-27 2014-10-02 제일모직 주식회사 Composition permettant de former une électrode de cellule solaire et électrode produite à partir de celle-ci
KR101566071B1 (ko) 2013-03-27 2015-11-04 제일모직주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
KR101993429B1 (ko) * 2014-11-07 2019-10-01 엘지디스플레이 주식회사 전기변색필름 및 이를 포함하는 투명 디스플레이

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JP2004134775A (ja) * 2002-09-19 2004-04-30 Murata Mfg Co Ltd 導電性ペースト
KR100801168B1 (ko) * 2007-06-18 2008-02-05 한국다이요잉크 주식회사 태양전지 제조용 후면 전극재료
JP2010083953A (ja) * 2008-09-30 2010-04-15 Mitsubishi Materials Corp 導電性インク組成物及び該組成物を用いて形成された太陽電池モジュール

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US8076570B2 (en) * 2006-03-20 2011-12-13 Ferro Corporation Aluminum-boron solar cell contacts
KR20100125164A (ko) * 2008-03-21 2010-11-30 키모토 컴파니 리미티드 광학용 필름, 적층체 및 터치패널

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Publication number Priority date Publication date Assignee Title
JP2004134775A (ja) * 2002-09-19 2004-04-30 Murata Mfg Co Ltd 導電性ペースト
KR100801168B1 (ko) * 2007-06-18 2008-02-05 한국다이요잉크 주식회사 태양전지 제조용 후면 전극재료
JP2010083953A (ja) * 2008-09-30 2010-04-15 Mitsubishi Materials Corp 導電性インク組成物及び該組成物を用いて形成された太陽電池モジュール

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015048197A1 (fr) * 2013-09-27 2015-04-02 Sunpower Corporation Structures de contact pour cellules solaires formées à partir d'une pâte de métal
US20150090330A1 (en) * 2013-09-27 2015-04-02 Richard Hamilton SEWELL Solar cell contact structures formed from metal paste
US9525082B2 (en) 2013-09-27 2016-12-20 Sunpower Corporation Solar cell contact structures formed from metal paste

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CN102714237B (zh) 2015-04-29
KR20110123482A (ko) 2011-11-15
KR101178180B1 (ko) 2012-08-30
CN102714237A (zh) 2012-10-03

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