WO2011136594A3 - Composition de cuivre et de titane pour solution de gravure de couche métallique - Google Patents

Composition de cuivre et de titane pour solution de gravure de couche métallique Download PDF

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Publication number
WO2011136594A3
WO2011136594A3 PCT/KR2011/003172 KR2011003172W WO2011136594A3 WO 2011136594 A3 WO2011136594 A3 WO 2011136594A3 KR 2011003172 W KR2011003172 W KR 2011003172W WO 2011136594 A3 WO2011136594 A3 WO 2011136594A3
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WO
WIPO (PCT)
Prior art keywords
copper
metal layer
etching solution
layer etching
titanium composition
Prior art date
Application number
PCT/KR2011/003172
Other languages
English (en)
Korean (ko)
Other versions
WO2011136594A2 (fr
Inventor
임민기
권오병
이유진
유인호
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to CN201180016453.8A priority Critical patent/CN102822391B/zh
Publication of WO2011136594A2 publication Critical patent/WO2011136594A2/fr
Publication of WO2011136594A3 publication Critical patent/WO2011136594A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Abstract

La présente invention porte sur une composition de cuivre et de titane pour une solution de gravure de couche métallique comprenant les composants suivants, sur la base du poids total de la composition : 5 à 20 % en poids de persulfate ; 0,01 à 2 % en poids d'un composé du fluor ; 1-10 % en poids d'un additif contenant un ou plusieurs acides choisis parmi les acides inorganiques, les sels d'acides inorganiques et les mélanges de ceux-ci ; 0,3 à 5 % en poids d'un composé amine cyclique ; 0,1 à 5 % en poids d'un composé du chlore ; 0,1 à 5 % en poids d'un acide p-toluènesulfonique ; le reste étant de l'eau.
PCT/KR2011/003172 2010-04-30 2011-04-28 Composition de cuivre et de titane pour solution de gravure de couche métallique WO2011136594A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201180016453.8A CN102822391B (zh) 2010-04-30 2011-04-28 用于含铜和钛的金属层的蚀刻液组合物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0040568 2010-04-30
KR1020100040568A KR20110121121A (ko) 2010-04-30 2010-04-30 구리와 티타늄을 포함하는 금속막용 식각액 조성물

Publications (2)

Publication Number Publication Date
WO2011136594A2 WO2011136594A2 (fr) 2011-11-03
WO2011136594A3 true WO2011136594A3 (fr) 2012-03-01

Family

ID=44862073

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Application Number Title Priority Date Filing Date
PCT/KR2011/003172 WO2011136594A2 (fr) 2010-04-30 2011-04-28 Composition de cuivre et de titane pour solution de gravure de couche métallique

Country Status (4)

Country Link
KR (1) KR20110121121A (fr)
CN (1) CN102822391B (fr)
TW (1) TWI510675B (fr)
WO (1) WO2011136594A2 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102002131B1 (ko) * 2012-08-03 2019-07-22 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 박막 트랜지스터 제조 방법
CN103668206A (zh) * 2012-09-19 2014-03-26 东友精细化工有限公司 用于铜层/钛层的蚀刻溶液组合物
CN103668207B (zh) * 2012-09-24 2018-04-06 东友精细化工有限公司 蚀刻剂和使用该蚀刻剂制造显示设备的方法
KR20140082392A (ko) * 2012-12-24 2014-07-02 솔베이(소시에떼아노님) 디스플레이 장치의 구리-함유 금속막용 에칭 조성물 및 이를 이용한 금속막의 에칭 방법
KR101905195B1 (ko) * 2012-12-24 2018-10-05 동우 화인켐 주식회사 은 박막의 식각액 조성물 및 이를 이용한 금속 패턴의 형성방법
CN103924243A (zh) * 2013-01-11 2014-07-16 上海飞凯光电材料股份有限公司 一种蚀刻液组合物
KR101527117B1 (ko) * 2013-06-27 2015-06-09 삼성디스플레이 주식회사 식각액 조성물, 이를 이용한 금속 배선 제조 방법 및 박막 트랜지스터 기판 제조방법
KR20160027598A (ko) * 2014-09-01 2016-03-10 삼성디스플레이 주식회사 식각 조성물, 이를 이용한 투명 전극의 형성 방법 및 표시 기판의 제조 방법
CN105734570B (zh) * 2014-12-26 2019-11-26 三星显示有限公司 蚀刻剂组合物及使用其制造金属接线的方法
KR102546799B1 (ko) * 2016-07-19 2023-06-23 동우 화인켐 주식회사 금속막 식각액 조성물 및 이를 이용한 표시 장치 제조 방법
CN108456885B (zh) * 2017-02-13 2022-08-23 东进世美肯株式会社 蚀刻液组合物以及利用其的金属布线形成方法

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JP2002047583A (ja) * 2000-07-28 2002-02-15 Mec Kk 銅または銅合金のマイクロエッチング剤およびそれを用いるマイクロエッチング法
KR20060099089A (ko) * 2005-03-10 2006-09-19 엘지.필립스 엘시디 주식회사 금속배선 식각용액 및 이를 이용한 금속배선 식각방법과 상기 식각용액을 이용한 액정표시장치의 제조방법
KR100839428B1 (ko) * 2007-05-17 2008-06-19 삼성에스디아이 주식회사 식각액, 및 이를 이용한 박막트랜지스터를 갖는 기판의제조 방법
KR20100035250A (ko) * 2008-09-26 2010-04-05 테크노세미켐 주식회사 액정표시장치의 구리 및 구리/몰리브데늄 또는 구리/몰리브데늄합금 전극용 식각조성물

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US5298117A (en) * 1993-07-19 1994-03-29 At&T Bell Laboratories Etching of copper-containing devices
CN1195895C (zh) * 1997-01-29 2005-04-06 美克株式会社 铜和铜合金的微浸蚀剂
KR101310310B1 (ko) * 2007-03-15 2013-09-23 주식회사 동진쎄미켐 박막트랜지스터 액정표시장치의 식각액 조성물

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002047583A (ja) * 2000-07-28 2002-02-15 Mec Kk 銅または銅合金のマイクロエッチング剤およびそれを用いるマイクロエッチング法
KR20060099089A (ko) * 2005-03-10 2006-09-19 엘지.필립스 엘시디 주식회사 금속배선 식각용액 및 이를 이용한 금속배선 식각방법과 상기 식각용액을 이용한 액정표시장치의 제조방법
KR100839428B1 (ko) * 2007-05-17 2008-06-19 삼성에스디아이 주식회사 식각액, 및 이를 이용한 박막트랜지스터를 갖는 기판의제조 방법
KR20100035250A (ko) * 2008-09-26 2010-04-05 테크노세미켐 주식회사 액정표시장치의 구리 및 구리/몰리브데늄 또는 구리/몰리브데늄합금 전극용 식각조성물

Also Published As

Publication number Publication date
CN102822391B (zh) 2014-12-10
TW201204875A (en) 2012-02-01
KR20110121121A (ko) 2011-11-07
CN102822391A (zh) 2012-12-12
TWI510675B (zh) 2015-12-01
WO2011136594A2 (fr) 2011-11-03

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