WO2011136479A2 - 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치 - Google Patents
태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치 Download PDFInfo
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- WO2011136479A2 WO2011136479A2 PCT/KR2011/002357 KR2011002357W WO2011136479A2 WO 2011136479 A2 WO2011136479 A2 WO 2011136479A2 KR 2011002357 W KR2011002357 W KR 2011002357W WO 2011136479 A2 WO2011136479 A2 WO 2011136479A2
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- Prior art keywords
- crucible
- polycrystalline silicon
- silicon ingot
- crucibles
- heater
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to an apparatus for producing a polycrystalline silicon ingot, and more particularly, includes a plurality of crucibles, and melts and directionally solidifies the raw material silicon filled in the plurality of crucibles to produce a plurality of ingots in one conventional ingot manufacturing time.
- the present invention relates to a high productivity polycrystalline silicon ingot production apparatus for solar cells.
- solar cells used for photovoltaic power generation are mainly manufactured using monocrystalline silicon ingots manufactured by the Czochralski impression method or polycrystalline silicon ingots by the Bridgman method. It is recognized that the cost of the substrate and the substrate should be lowered and the productivity increased.
- the solidification spreads from the bottom of the crucible to the upper direction. It is a process.
- the ingot obtained as a result of a well-controlled directional solidification process has a columnar structure in which a large number of single crystal pillars are coalesced in one direction.
- the structure is such that electrons can be collected toward the electrode without loss.
- commercial-scale polycrystalline silicon ingots for solar cells are about 400-450 kg in size, and are manufactured one at a time by batch method to ensure high quality. It is accompanied by apparatus cost.
- the technical key point is that the raw material silicon is melted and directional solidified, but the crystal structure is columnar structure, the grain size is large, and the quality of the solar cell is small enough to include crystalline defect and impurity. To produce a polycrystalline ingot to fit.
- the heaters and heat insulating parts forming the hot zone of the ingot manufacturing apparatus are optimized.
- Design must be accompanied by optimization of process parameters such as silicon melting and solidification rates and heat treatment rates.
- the current main technology development direction is mainly focused on increasing the size of the ingot that can be produced in one batch, but there are other ways to maximize productivity and reduce the process cost in one batch. Consideration may be given to producing ingots. Accordingly, the present invention seeks to present such a new ingot manufacturing apparatus and method capable of producing a plurality of ingots at the same time without increasing the processing time and to present additional technologies accordingly.
- a polycrystalline silicon substrate for a solar cell is manufactured by dividing one large polycrystalline silicon ingot into several small sized blocks, and thus, great efforts are made to reduce the quality deviation between these blocks.
- the commonly used quartz or graphite crucible is sometimes cracked or broken in the environment of high temperature of 1500 ° C, large temperature change, and large pressure change in vacuum and inert atmosphere, which are suitable for manufacturing polycrystalline silicon ingot. Can be.
- the ingots of the other crucibles must be able to minimize the reduction in yield by successfully maintaining the process until the end, and the leaked silicon is isolated at the bottom of the broken crucible. It needs to stay safe in the solidified state until the end of the process.
- the present invention has been devised to solve the above problems, and provided with a plurality of crucibles, heater means capable of uniformly heating each crucible and stably maintaining the required process temperature, and cooling required for directional solidification Means and insulation means and safe isolation means of spilled molten silicon can be used to produce multiple polycrystalline silicon ingots simultaneously.
- the present invention for achieving the above object is located in the vacuum chamber and the inside of the raw material silicon-filled crucible and support, a plurality of crucibles are heated simultaneously to melt the raw material silicon filled and then directional solidification to produce a polycrystalline silicon ingot
- a plurality of protection plates are installed on the outside of the crucible support, and a plurality of protection plates are provided to isolate and remove the solidification heat of the liquid silicon only to the lower side of the crucible.
- a plurality of crucibles arranged so as to be spaced apart from each other in a direction and containing polysilicon ingots, respectively, heater means provided on the outside of the crucibles to heat the crucibles to melt the filled raw silicon; The raw silicon melted by the heater means Cooling means for cooling the crucible to solidify and grow into a polycrystalline ingot.
- the vacuum chamber has a rectangular space portion in the interior thereof, and the crucible is provided with four crucibles, and each crucible is arranged in each zone on the basis of an imaginary cross-shaped line passing through the midpoint of the space portion.
- the crucible is fixed by the crucible support, by installing a plurality of liquid silicon leakage preventing protective plate on the outside of the crucible support so that the silicon in the unbroken crucible can be used for ingot production even when some crucible is broken during a plurality of ingot manufacturing experiments. It acts as a perfect insulation system for the entire surface except the bottom of the crucible to limit the coagulation heat of molten silicon to the bottom of the crucible and to remove it. As a result, it is possible to remove the unidirectional direction. The overall yield can be improved by increasing the fraction of.
- the heater means comprises an external heater provided to heat the surface of each crucible toward the inner surface of the vacuum chamber, and an internal heater provided to heat the mutually opposing surfaces of each crucible.
- the inner heater is provided in a cross shape along the virtual line of the cross shape, and is provided between the surfaces of the crucibles facing each other.
- each of the internal heater is formed in a plate shape in which the heating tube is bent a plurality of times or a plurality of rods are formed to correspond to the crucible surface.
- the external heater and each internal heater are further provided with a control unit to enable respective operation and temperature control.
- the cooling means is provided below the plurality of crucibles to simultaneously cool the plurality of crucibles.
- the cooling means is provided under each of the crucibles, respectively, to cool each crucible.
- a plurality of supports for supporting each crucible from the outside is provided, and one or more spill prevention protection plates are further provided around the support.
- a plurality of crucibles can be heated evenly by controlling the respective temperatures of a heater means composed of an external heater and an internal heater, similar to the conventional method. It is possible to produce a large number of ingots in the process time, and it is equipped with a safe isolation means of molten silicon spilled in an emergency to prevent the risk of equipment damage and explosion, and to control the efficiency of liquid silicon solidification heat. It is an effective invention that can maximize the columnar structure fraction of suitable ingot.
- FIG. 1 is a view showing a high productivity polycrystalline silicon ingot manufacturing apparatus for solar cells according to the present invention
- FIG. 2 is a plan view showing a high productivity polycrystalline silicon ingot manufacturing apparatus for solar cells according to the present invention
- FIG. 3 is a view showing a heater means of a high productivity polycrystalline silicon ingot manufacturing apparatus for solar cells according to the present invention
- Figure 4 is a view showing another embodiment of the heater means of the high productivity polycrystalline silicon ingot manufacturing apparatus for solar cells according to the present invention
- FIG. 5 is a view showing another embodiment of the cooling means of the high productivity polycrystalline silicon ingot production apparatus for solar cells according to the present invention.
- FIG. 6 is a view showing a liquid silicon outflow protection plate of the high productivity polycrystalline silicon ingot manufacturing apparatus for solar cells according to the present invention.
- FIG. 1 is a view showing a high productivity polycrystalline silicon ingot manufacturing apparatus for solar cells according to the present invention
- Figure 2 is a view showing a plan view of a high productivity polycrystalline silicon ingot manufacturing apparatus for solar cells according to the present invention
- Figure 3 4 is a view showing the heater means of the high productivity polycrystalline silicon ingot production apparatus for solar cells according to the invention
- Figure 4 is a view showing another embodiment of the heater means of the high productivity polycrystalline silicon ingot production apparatus for solar cells according to the present invention
- 5 is a view showing another embodiment of the cooling means of the high productivity polycrystalline silicon ingot manufacturing apparatus for solar cells according to the present invention
- Figure 6 is a crucible failure in the melting and cooling process of the raw material silicon is installed around the crucible support
- Figure 6 is a view showing a leak-proof protective plate for the collection of liquid silicon that can be leaked by.
- the leak-proof protection plate keeps the inside of the device in a completely sealed form together with the side insulation of the heater outside and the bottom insulation of the lower part of the crucible, even if the liquid silicon is leaked by the crucible breakage, the leakage to the outside can be completely blocked. Play a protective role.
- the high productivity polycrystalline silicon ingot manufacturing apparatus 10 for solar cells heats and melts raw material silicon in the vacuum chamber 100, and then cools to manufacture a polycrystalline silicon ingot.
- a plurality of crucibles 200 in which the raw material silicon is contained in the vacuum chamber 100 to manufacture the polycrystalline silicon ingot are provided, and the crucibles 200 are arranged to be spaced apart from each other in the horizontal direction.
- Each of these crucibles 200 is each wrapped by a susceptor 500, and each of the susceptors 500 is fixed inside the vacuum chamber 100 by a support (not shown), and around each crucible 200.
- a heat insulator (not shown) is provided to block heat emitted to the device.
- the susceptor 500 protects the crucible 200 and easily conducts heat or cold air transferred from the outside to the crucible 200, and is made of carbon or graphite having excellent heat transfer.
- the crucible 200 is formed of at least one selected from quartz or graphite.
- the heater means 300 is for melting each of the crucibles 200 by heating the crucibles 200.
- the heater means 300 is provided on the outside of each crucible 200 to transfer the radiant heat to transfer the raw silicons filled in the crucibles 200. Melted.
- the cooling means 400 is provided to cool each crucible 200, and by cooling each crucible 200 heated by the heater means 300 to cool the molten raw material silicon to grow into polycrystalline. do.
- a heat insulating layer 110 through which the moving hole 112 is opened and a blocking door 120 for opening and closing the moving hole 112. 120 is provided below the crucible 200 to selectively partition the vacuum chamber 100 together with the heat insulating layer 110.
- the zone in which the heater means 300 and the crucible 200 are located and the cooling means are located. It is partitioned by the blocking door 120 to the area 400 is located.
- the vacuum chamber 100 the inside thereof has a rectangular space portion, it is preferable that the rectangular space portion is formed as a whole in order to improve the thermal efficiency.
- a plurality of crucibles 200 are provided with four, each crucible 200 is arranged in each zone based on the virtual line of the cross shape passing through the midpoint of the space of the vacuum chamber 100.
- each crucible 200 is installed to be spaced apart from each other at regular intervals.
- the heater means 300 is composed of an external heater 310 and the inner heater 320, the outer heater 310 and the inner heater 320 transmits radiant heat to each side of each crucible 200, each crucible ( 200) is heated.
- the external heater 310 is provided to heat the surface of each crucible 200 toward the inner surface of the vacuum chamber 100, and the internal heater 320 heats mutually opposite surfaces of each crucible 200. It is provided to.
- the inner heater 320 is provided in the cross shape along the virtual line of the cross shape, it is composed of four to be provided between each of the surfaces of the crucible 200 facing each other.
- the silicon raw material contained in each crucible 200 may be melted.
- the external heater 310 and the internal heater 320 are formed in a plate shape in which a heating tube is bent a plurality of times, and generates high heat by electric power applied through an electrode (not shown).
- the susceptor 500 is heated, and the heated susceptor 500 transmits heat to the crucible 200 to melt the contained raw silicon.
- the outer heater 310 and the inner heater 320 is formed by a plurality of rods are formed so as to correspond to the surface of the crucible 200, high heat by the power applied through the electrode (not shown) To generate the heating of the susceptor 500, and the heated susceptor 500 transmits heat to the crucible 200 to melt the contained raw silicon.
- the outer heater 310 and the inner heater 320 are further provided with a controller 600 to enable respective operation and temperature control.
- a controller 600 to enable respective operation and temperature control.
- Each crucible 200 It is possible to control and maintain the melting temperature of the ()) to melt the raw material silicon in a number of crucibles 200 simultaneously for a time similar to the conventional.
- the cooling means 400 is provided under the plurality of crucibles 200 to simultaneously cool the plurality of crucibles 200 to cool the molten silicon in each crucible 200 and to grow into a polycrystalline ingot having a columnar structure. do.
- the cooling means 400 may be provided under each of the crucibles 200 to cool each crucible 200.
- each polycrystalline silicon ingot is manufactured in a plurality of crucibles 200, productivity of at least three times or more can be improved.
- a crucible support 700 for supporting the crucible 200, the crucible support 700 and the heat insulating layer Between the 110 is further provided a leakage prevention protection plate (800).
- the leakage preventing protection plate 800 is composed of one or a plurality of, to seal the moving section of the cooling means 400 to prevent the liquid silicon contained in the crucible 200 to flow out of the moving section of the cooling means (400). .
- the leakage preventing protection plate 800 seals the lower side of the crucible 200 to which the cooling means 400 is moved so that the heat exchange is made only to the cooling means 400 and the lower side of the crucible 200 to melt the silicon of the crucible 200. As the cooling from the lower side to the upper side will be solidified sequentially.
- the leakage preventing protection plate 800 maintains the inside of the vacuum chamber 100 together with the side insulation 140 of the external heater 310 and the heat insulation layer 110 under the crucible 200 in a completely sealed form.
- the unidirectional removal of the heat of solidification for the molten silicon contained in the crucible 200 is possible, thereby increasing the fraction of the columnar structure that influences the physical properties of the polycrystalline ingot for solar cells, thereby further improving yield.
- liquid silicon which may occur during melting and cooling of the solid-state raw material silicon filled in the crucible 200, may be prevented from flowing out through the moving hole 112 of the open insulating layer 110.
- the spill prevention protective plate 800 is preferably formed of graphite.
- support 140 heat insulating material
- control unit 700 crucible support
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- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
- 진공챔버 내부에서 도가니에 충진된 원료 실리콘을 가열하여 용융시킨 후, 냉각시켜 다결정 실리콘 잉곳을 제조하는 태양전지용 다결정 실리콘 잉곳 제조 장치에 있어서,상기 진공챔버 내부에 수평방향으로 상호 이격되도록 배열되며, 원료 실리콘 이 각각 담겨져 다결정 실리콘 잉곳이 제조되는 다수의 도가니;상기 각 도가니를 가열시켜 담겨진 원료 실리콘을 용융시키도록 상기 각 도가니의 외측에 구비되는 히터수단; 및상기 히터수단에 의해 용융된 실리콘을 냉각시켜 다결정 잉곳으로 성장시키기 위해 상기 도가니를 냉각시키는 냉각수단을 포함하여 이루어지는 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치.
- 제1항에 있어서,상기 진공챔버는 그 내부가 사각형의 공간부를 갖고,상기 도가니는 네 개로 구비되되, 상기 공간부의 중간점을 지나는 십자형상의 가상선을 기준으로, 상기 각 도가니는 각 구역에 배열되는 것을 특징으로 하는 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치.
- 제2항에 있어서, 상기 히터수단은,상기 진공챔버의 내측면을 향한 각 도가니의 면을 가열하도록 구비되는 외부히터; 및상기 각 도가니의 상호 대향되는 면을 가열하도록 구비되는 내부히터를 포함하여 이루어지는 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치.
- 제3항에 있어서,상기 내부히터는 상기 십자형상의 가상선을 따라 십자형상으로 구비되되, 상호 대면되는 각 도가니의 면 사이에 각각 구비되는 것을 특징으로 하는 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치.
- 제4항에 있어서,상기 각 내부히터는 가열관이 다수 번 절곡된 판형상으로 형성되거나 다수 개 배열된 봉이 상기 도가니 면과 대응되도록 형성되는 것을 특징으로 하는 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치.
- 제4항에 있어서,상기 외부히터와 각 내부히터는 각각의 작동 및 온도제어가 가능하도록 제어부가 더 구비되는 것을 특징으로 하는 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치.
- 제2항에 있어서, 상기 냉각수단은,상기 다수의 도가니 하측에 구비되어 다수의 도가니를 동시에 냉각시키는 것을 특징으로 하는 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치.
- 제2항에 있어서, 상기 냉각수단은,상기 각 도가니의 하측에 각각 구비되어 각 도가니를 각각 냉각시키는 것을 특징으로 하는 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치.
- 제1항 내지 제8항 중 어느 한 항에 있어서,상기 각 도가니를 하측에서 지지하는 도가니 지지대가 설치되고,상기 도가니 지지대와 단열층 사이 냉각수단의 이동구간을 밀폐시키도록 하나 또는 복수의 유출방지 보호판이 더 구비되는 것을 특징으로 하는 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치.
- 제9항에 있어서,상기 유출방지 보호판의 재질은 흑연으로 된 것을 특징으로 하는 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201180021330.3A CN102934239B (zh) | 2010-04-29 | 2011-04-05 | 太阳能电池用的多晶硅锭的高输出制造设备 |
| US13/643,422 US9263624B2 (en) | 2010-04-29 | 2011-04-05 | High-output apparatus for manufacturing a polycrystal silicon ingot for a solar cell |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100040101A KR101139845B1 (ko) | 2010-04-29 | 2010-04-29 | 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치 |
| KR10-2010-0040101 | 2010-04-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2011136479A2 true WO2011136479A2 (ko) | 2011-11-03 |
| WO2011136479A3 WO2011136479A3 (ko) | 2011-12-29 |
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ID=44861999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2011/002357 Ceased WO2011136479A2 (ko) | 2010-04-29 | 2011-04-05 | 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9263624B2 (ko) |
| KR (1) | KR101139845B1 (ko) |
| CN (1) | CN102934239B (ko) |
| TW (1) | TWI412640B (ko) |
| WO (1) | WO2011136479A2 (ko) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160281259A1 (en) * | 2013-11-07 | 2016-09-29 | Ebner Industrieofenbau Gmbh | Controlling a temperature of a crucible inside an oven |
| CN117109301A (zh) * | 2023-10-25 | 2023-11-24 | 山西第三代半导体技术创新中心有限公司 | 一种用于制备大孔径碳化硅粉料的坩埚结构 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101216523B1 (ko) * | 2012-03-20 | 2012-12-31 | 유호정 | 멀티-도가니 타입 실리콘 잉곳 성장 장치 |
| CN104502826A (zh) * | 2014-12-03 | 2015-04-08 | 东莞市长安东阳光铝业研发有限公司 | 一种快速测试多晶硅铸锭的方法 |
| CN105696072A (zh) * | 2016-04-12 | 2016-06-22 | 常州亿晶光电科技有限公司 | 蓝宝石长晶炉 |
| KR101816109B1 (ko) * | 2016-05-30 | 2018-01-08 | 주식회사 사파이어테크놀로지 | 탄화규소 단결정 잉곳의 성장장치 및 그 성장방법 |
| CN107881555A (zh) * | 2017-10-24 | 2018-04-06 | 佛山市三水兴达涂料有限公司 | 一种半导体材料的加工装置及加工工艺 |
| CN109371464B (zh) * | 2018-11-19 | 2023-08-11 | 江苏斯力康科技有限公司 | 生产太阳能多晶硅用定向凝固装置 |
| CN109706522A (zh) * | 2019-03-05 | 2019-05-03 | 晶科能源有限公司 | 一种多晶硅铸锭炉及其隔热笼 |
| CN110241457A (zh) * | 2019-07-01 | 2019-09-17 | 江阴东升新能源股份有限公司 | 硅芯方锭铸锭装置及其铸造工艺 |
| CN110592659B (zh) * | 2019-10-21 | 2021-09-21 | 哈尔滨元雅新材料科技有限公司 | 一种多坩埚梯度冷凝晶体生长装置及其用于生长大尺寸溴化镧单晶的方法 |
| CN113502531A (zh) * | 2021-08-24 | 2021-10-15 | 胡君梅 | 一种多隔区垂直温度梯度可调的铸锭单晶硅生长设备及方法 |
| CN113970242B (zh) * | 2021-11-05 | 2023-11-10 | 中北大学 | 一种铝合金高通量熔炼装置及方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006335582A (ja) * | 2005-05-31 | 2006-12-14 | Daiichi Kiden:Kk | 結晶シリコン製造装置とその製造方法 |
| JP2007099579A (ja) * | 2005-10-06 | 2007-04-19 | Nippon Telegr & Teleph Corp <Ntt> | 結晶製造方法およびその装置 |
| KR100861412B1 (ko) * | 2006-06-13 | 2008-10-07 | 조영상 | 다결정 실리콘 잉곳 제조장치 |
| JP2007332022A (ja) * | 2006-06-13 | 2007-12-27 | Young Sang Cho | 多結晶シリコンインゴット製造装置 |
| DE102007026298A1 (de) * | 2007-06-06 | 2008-12-11 | Freiberger Compound Materials Gmbh | Anordnung und Verfahren zur Herstellung eines Kristalls aus der Schmelze eines Rohmaterials sowie Einkristall |
| KR100955221B1 (ko) * | 2007-10-05 | 2010-04-29 | 주식회사 글로실 | 힌지를 이용한 도어 개폐장치가 구비된 태양전지용 다결정실리콘 주괴 제조 장치 |
| TW201142093A (en) * | 2010-03-12 | 2011-12-01 | Gt Solar Inc | Crystal growth apparatus with load-centered aperture, and device and method for controlling heat extraction from a crucible |
-
2010
- 2010-04-29 KR KR1020100040101A patent/KR101139845B1/ko not_active Expired - Fee Related
-
2011
- 2011-04-05 US US13/643,422 patent/US9263624B2/en not_active Expired - Fee Related
- 2011-04-05 CN CN201180021330.3A patent/CN102934239B/zh not_active Expired - Fee Related
- 2011-04-05 WO PCT/KR2011/002357 patent/WO2011136479A2/ko not_active Ceased
- 2011-04-13 TW TW100112774A patent/TWI412640B/zh not_active IP Right Cessation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160281259A1 (en) * | 2013-11-07 | 2016-09-29 | Ebner Industrieofenbau Gmbh | Controlling a temperature of a crucible inside an oven |
| US10094040B2 (en) * | 2013-11-07 | 2018-10-09 | Ebner Industrieofenbau Gmbh | Controlling a temperature of a crucible inside an oven |
| CN117109301A (zh) * | 2023-10-25 | 2023-11-24 | 山西第三代半导体技术创新中心有限公司 | 一种用于制备大孔径碳化硅粉料的坩埚结构 |
| CN117109301B (zh) * | 2023-10-25 | 2023-12-22 | 山西第三代半导体技术创新中心有限公司 | 一种用于制备大孔径碳化硅粉料的坩埚结构 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102934239A (zh) | 2013-02-13 |
| CN102934239B (zh) | 2015-08-12 |
| US20130036769A1 (en) | 2013-02-14 |
| TW201142094A (en) | 2011-12-01 |
| WO2011136479A3 (ko) | 2011-12-29 |
| US9263624B2 (en) | 2016-02-16 |
| KR20110120617A (ko) | 2011-11-04 |
| KR101139845B1 (ko) | 2012-04-30 |
| TWI412640B (zh) | 2013-10-21 |
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